US8531022B2 - Routable array metal integrated circuit package - Google Patents
Routable array metal integrated circuit package Download PDFInfo
- Publication number
- US8531022B2 US8531022B2 US12/399,200 US39920009A US8531022B2 US 8531022 B2 US8531022 B2 US 8531022B2 US 39920009 A US39920009 A US 39920009A US 8531022 B2 US8531022 B2 US 8531022B2
- Authority
- US
- United States
- Prior art keywords
- metal
- integrated circuit
- die
- routable
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active, expires
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4828—Etching
- H01L21/4832—Etching a temporary substrate after encapsulation process to form leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
Definitions
- the invention relates generally to integrated circuit packaging, and more specifically to a routable array metal integrated circuit package.
- circuits that include one or more integrated circuits, often called “chips”. These integrated circuits are usually relatively large or complex circuits such as computer processors, memory arrays, or other such devices.
- the actual circuits in the integrated circuit are typically formed using semiconductor devices formed on a substrate, such as doped silicon transistors, resistors, and capacitors formed on a silicon substrate.
- the combination of a substrate and circuitry formed on the substrate is often referred to as a “die”, and usually has circuitry that is so small that it is impossible to see the individual electronic components or circuit traces with the naked eye. Due to the small size of the circuit elements formed on the substrate, the die is also relatively fragile and can be easily damaged by scratching. Some circuits that operate at high power, such as high performance processors or controllers, also produce more heat than the integrated circuit die can dissipate, and so are not usable without some means of dissipating generated heat.
- Integrated circuit packages typically include pins, solder balls, or other electrical conductors that are coupled via small lead wires to various parts of the die's electrical circuits, enabling easy and reliable electrical connection from the package's exterior to the die's circuitry.
- These packages provide a variety functions not related to electrical connection, including carrying heat away from the die to the exterior of the circuit package and perhaps to an external heat sink, and protecting the relatively fragile die from environmental factors such as abrasion, moisture, and shock.
- packaging an integrated circuit die has several challenges itself. Although a typical integrated circuit die is too small to form connections to without specialized equipment, it is still desirable to keep the size of the packaged die small so that it can be easily integrated into compact or portable electronic devices.
- the cost of the package is a significant concern, as complex packages that provide good heat management, good protection of the die, and easy connectivity to external circuitry can be a significant part of the cost of a packaged integrated circuit.
- One example embodiment of the invention comprises an integrated circuit assembly including an integrated circuit die, and a routable metal layer comprising metal traces linking a plurality of wire bond pads to a plurality of external connection pads such that the metal traces are routable under the die area.
- An electrically nonconductive adhesive layer couples the integrated circuit die to the routable metal layer, and a plurality of wire bonds link circuitry on the integrated circuit die to the wire bond pads in the routable metal layer.
- An overfill material encapsulates the integrated circuit die, the plurality of wire bonds, and one side of the package's external connection pads. A plurality of solder balls are formed on the plurality of external connection pads.
- FIGS. 1 a - 1 g show an example integrated circuit assembly fabricated using a sacrificial metal base substrate carrier, consistent with a prior art example.
- FIG. 2 a shows a side view of an integrated circuit assembly having a routable metal layer, consistent with some embodiments of the invention.
- FIG. 2 b is a bottom view of the integrated circuit assembly having a routable metal layer of FIG. 2 a , consistent with an example embodiment of the invention.
- FIGS. 3 a - 3 f illustrate an example method of forming an integrated circuit assembly having a routable metal layer using a sacrificial base layer and localized solder stop, consistent with an example embodiment of the invention.
- FIGS. 4 a - 4 b illustrate an alternate method of forming an integrated circuit assembly having a routable metal layer using a sacrificial base layer using a full solder mask, consistent with an example embodiment of the invention.
- FIG. 5 is a top view of a series of integrated circuit assemblies formed on a sacrificial metal strip base layer, consistent with an example embodiment of the invention.
- the invention disclosed herein comprises in one example embodiment an integrated circuit assembly comprising an integrated circuit die, and a routable metal layer comprising metal traces linking a plurality of wire bond pads to a plurality of external connection pads such that the metal traces are routable under the die area.
- An electrically nonconductive adhesive layer couples the integrated circuit die to the routable metal layer, and a plurality of wire bonds link circuitry on the integrated circuit die to the wire bond pads in the routable metal layer.
- An overfill material encapsulates at least the integrated circuit die and the plurality of wire bonds, and one side of the package's external connection pads.
- a plurality of solder balls are formed on the plurality of external connection pads.
- Packaging for integrated circuits is typically designed to protect a relatively fragile integrated circuit die from its environment, to provide reliable electrical connection between the die and external circuitry, and in many cases to carry heat away from the die. Designing the packaging takes into consideration not only physical constraints such as these, but also the cost and complexity of the packaging process and the equipment required to package the dice.
- FIGS. 1 a - 1 g show a sacrificial metal base strip packaging process. This example process starts by using a metal base strip onto which a package is formed, and from which the completed package is eventually separated.
- a copper base strip 101 has a plating resist pattern applied to the surface of the copper base strip, as shown at 102 .
- the bottom side of the copper base strip also has an unpatterned, solid layer of plating resist coating to prevent any plating metal deposition onto the bottom surface.
- the resist pattern on the top side allows a plating step shown in FIG. 1 b to deposit plating material in the patterned resist openings to form wire-bond metal pads 103 and die attach pad 104 .
- the plating material is one or more metal layers, such as gold, palladium, nickel, and copper.
- Palladium and gold work well for surfaces of metal layers to which wires will later be bonded, while metals such as nickel or copper are often used for the body of a plating step due to their high conductivity and relatively low cost. Gold is also resistant to oxidation, and so is often used for external plating of metal layers to prevent oxidation of the underlying solderable metal.
- the resist material 102 applied in FIG. 1 a is removed in FIG. 1 c , leaving only the metal pads 103 and 104 formed in FIG. 1 b on the copper strip 101 .
- region 104 forms a base for attachment of the integrated circuit die, as shown in FIG. 1 d .
- the die 105 is attached to the metal plating region 104 , such as by use of an epoxy or other adhesive.
- the various circuits on the integrated circuit die are then connected to metal pads 103 formed during the plating process by using fine wire in what is known as a wirebond process.
- the wires 106 connect various electrical contact points on the integrated circuit die to the metal pads 103 , such that the metal pads 103 can be eventually coupled to electrical connections external to the completed package to couple the integrated circuit to external circuitry.
- the assembly is covered with an over-mold material as shown at 107 in FIG. 1 f to encapsulate and protect the die and the wiring and metal pads.
- This over-mold material is an electrically nonconductive material, such as epoxy or another suitable material.
- the encapsulated assembly is then processed to remove the sacrificial metal base strip 101 from the assembly, resulting in the die assembly shown in FIG. 1 g .
- the copper base strip in this example is removed from the die assembly by a chemical etch that removes copper efficiently but does not attach to or react with the exposed metal used in the plated metal pads 103 and 104 .
- the metal pads 103 and 104 in the assembly shown in FIG. 1 g can then be coupled to the next level board assembly using solder or conductive adhesive compound, or through other means.
- the metal pad 104 that supports the die is the same metal that is used to form the pads 103 , but no metal pad formed in the plating process of FIG. 1 b is connected to any other metal pad.
- the bond wires shown at 106 of FIG. 1 e couple the die's circuits to the metal pads 103 , enabling connection to external circuitry. Because the bond wires cannot cross one another without risking electrically coupling one wire to the other due to accidental contact, this packaging system does not provide the ability to cross or route wires to different pads.
- One example embodiment of the invention addresses some problems with the assembly of FIG. 1 by providing a sacrificial metal base strip packaging process that includes a routable layer that is formed by pattern plating. This provides improved flexibility in routing circuit traces to facilitate external connections
- FIGS. 2 a and 2 b show a pattern-plated sacrificial metal strip die package including a Ball Grid Array (BGA) format, consistent with an example embodiment of the invention. Other package formats without solder balls are also commonly used.
- BGA Ball Grid Array
- FIG. 2 a the die package is inverted from the example die package shown in FIG. 1 g , and includes a routable metal layer in place of the large pad 104 onto which the die is mounted in FIG. 1 .
- a routable metal layer of conductive traces 204 is formed on the sacrificial metal layer, including in the area in which the die is mounted.
- the traces are coupled to the die via wire bond connections to metal wirebond pads 203 , which are coupled via the metal layer conductive traces 204 to package pads 201 .
- Solder balls 202 are here formed on package pads 201 in openings in solder mask layer 206 , for connection to external circuitry.
- an electrically non-conductive die-attach adhesive material 205 such as epoxy compound, is used for die-attach. This provides a compact, efficient package, with enhanced flexibility in configuration due to the routable metal traces in the metal layer.
- FIG. 2 b A bottom view of the example package of FIG. 2 a is shown in FIG. 2 b .
- conductive traces 204 are shown to link various solder balls 202 to various metal wirebond pads 203 , such that a wirebond connection from the die to the wirebond pad 203 is electrically coupled via conductive traces 204 to the solder balls 202 .
- Some solder balls, such as power and ground connections, may be connected to multiple pads on the routable metal layer so that multiple power and ground connections can be made between the various circuits on the die and the external power source.
- An example is shown in FIG. 2 b at pads 207 , which are coupled to one another and to a single solder ball via metal traces on the routable metal layer.
- FIGS. 3 a - 3 f illustrate a method of forming a die package having a routable metal layer using a sacrificial metal strip integrated circuit packaging process, consistent with an example embodiment of the invention.
- the sacrificial metal strip is a copper metal base 301
- a routable or patterned metal circuit layer 302 is formed on the strip, such as by using a photo-definable plating resist material and photo-mask as described in greater detail with respect to the example of FIG. 1 .
- the metal layer here has one or more layers of metal in a metal-stack, where different types of metal may be used in different layers to provide different properties.
- the metal routable layer 302 which comprises wirebonding pad features 203 , package pad features 201 , and routing trace features 204 as illustrated in FIGS. 2 a and 2 b , includes in one embodiment a wire-bondable metal on the top surface, such as palladium, silver, or gold.
- a diffusion barrier metal layer such as nickel is immediately below the wire-bondable metal layer, and a conductive metal such as copper is next.
- a solder diffusion barrier metal such as nickel is formed, and the bottom layer is an oxidation prevention metal such as silver, gold, or palladium.
- more layers, other layers, or only select layers from the above example are included in the routable metal layer 302 .
- the die is attached to the routable metal layer in FIG. 3 b via an electrically nonconductive epoxy layer 303 , or via another nonconductive adhesive material.
- the die is therefore not directly electrically connected to any routable metal traces routed under the die, but is instead coupled to the routable metal layer via bond wires 304 .
- the bond wires 304 are attached to various pads 305 , which are coupled via the routable metal layer to external circuit connections.
- the assembly is then encased as shown in FIG. 3 c with an overmold material 306 , which protects the die and the bond wires from abrasion, moisture, and other environmental factors.
- the sacrificial metal strip copper base is then removed as shown in FIG. 3 d (shown upside-down), such as by chemical etching. This leaves the routable metal layer and the die-attach epoxy exposed from the overmold applied in FIG. 3 c .
- the sacrificial metal strip is in some examples a long or continuous metal strip that is cut into individual die packages near the end of the packaging process, such as by sawing the metal strip or the die package, as shown in FIG. 5 .
- solder balls are applied to the exposed solder ball regions 309 of the routable metal layer as shown in FIG. 3 d .
- solder stop 307 is applied at various points to constrain solder from flowing onto metal traces 204 during solder ball attachment to the pad areas as shown at 308 in FIG. 3 f.
- FIGS. 4 a and 4 b present an alternate method of applying solder balls, using a full solder mask layer instead of solder stop as employed in FIGS. 3 e and 3 f .
- a permanent solder mask 401 is applied to the entire bottom side of the integrated circuit package except for the area over the package metal pads that will receive solder balls, as shown at 402 in FIG. 4 b .
- This solder mask layer can be of a photo-definable or non-photo-definable characteristic, in ink or dry-film form, and can be applied using screening or lamination process in various embodiments.
- a series of integrated circuit assemblies can be formed on a long or continuous sacrificial metal strip base layer, such as is shown in FIG. 5 .
- the individual integrated circuit packages 501 are then separated from one another, such as by sawing, in the final stages of integrated circuit package production.
- the routable metal layer integrated circuit assembly technology described herein therefore provides a variety of advantages over prior art integrated circuit mounting technologies such as the example illustrated in FIG. 1 , including providing the advantage of full layer routing capability.
- a typical BGA package uses an organic substrate for routing. Eliminating an organic substrate in the routable metal layer integrated circuit examples illustrated in FIGS. 2-4 makes these examples significantly less expensive than prior technologies, and substantially reduces the height of the finished integrated circuit assembly which allows for thinner devices such as cell phones, personal digital assistant devices, global positioning systems, and other portable or handheld electronic devices.
Abstract
Description
Claims (19)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/399,200 US8531022B2 (en) | 2009-03-06 | 2009-03-06 | Routable array metal integrated circuit package |
PCT/US2010/026394 WO2010102229A1 (en) | 2009-03-06 | 2010-03-05 | Wire-bonded integrated circuit package without package substrate and including metal traces linking to external connection pads routed under integrated circuit die. |
TW099106499A TWI491001B (en) | 2009-03-06 | 2010-03-05 | Integrated circuit assembly |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/399,200 US8531022B2 (en) | 2009-03-06 | 2009-03-06 | Routable array metal integrated circuit package |
Publications (2)
Publication Number | Publication Date |
---|---|
US20100224981A1 US20100224981A1 (en) | 2010-09-09 |
US8531022B2 true US8531022B2 (en) | 2013-09-10 |
Family
ID=42104427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/399,200 Active 2029-09-19 US8531022B2 (en) | 2009-03-06 | 2009-03-06 | Routable array metal integrated circuit package |
Country Status (3)
Country | Link |
---|---|
US (1) | US8531022B2 (en) |
TW (1) | TWI491001B (en) |
WO (1) | WO2010102229A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9324641B2 (en) * | 2012-03-20 | 2016-04-26 | Stats Chippac Ltd. | Integrated circuit packaging system with external interconnect and method of manufacture thereof |
Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5830800A (en) | 1997-04-11 | 1998-11-03 | Compeq Manufacturing Company Ltd. | Packaging method for a ball grid array integrated circuit without utilizing a base plate |
US6001671A (en) * | 1996-04-18 | 1999-12-14 | Tessera, Inc. | Methods for manufacturing a semiconductor package having a sacrificial layer |
US6238952B1 (en) * | 2000-02-29 | 2001-05-29 | Advanced Semiconductor Engineering, Inc. | Low-pin-count chip package and manufacturing method thereof |
US20020027289A1 (en) | 2000-09-01 | 2002-03-07 | Toshimichi Kurihara | Semiconductor device with an improved bonding pad structure and method of bonding bonding wires to bonding pads |
US20020041019A1 (en) * | 2000-08-09 | 2002-04-11 | Gang Heung-Su | Semiconductor package having implantable conductive lands and method for manufacturing the same |
US6635957B2 (en) * | 1998-06-10 | 2003-10-21 | Asat Ltd. | Leadless plastic chip carrier with etch back pad singulation and die attach pad array |
US6975022B2 (en) * | 2000-05-24 | 2005-12-13 | Sanyo Electric Co., Ltd. | Board for manufacturing a BGA and method of manufacturing semiconductor device using thereof |
US20060163702A1 (en) * | 2003-08-01 | 2006-07-27 | Kim Dalson Y S | Chip on board leadframe for semiconductor components having area array |
US20070108583A1 (en) * | 2005-08-08 | 2007-05-17 | Stats Chippac Ltd. | Integrated circuit package-on-package stacking system |
US7245023B1 (en) | 2004-06-11 | 2007-07-17 | Bridge Semiconductor Corporation | Semiconductor chip assembly with solder-attached ground plane |
US20080093597A1 (en) * | 2006-10-24 | 2008-04-24 | Elpida Memory, Inc. | Semiconductor device |
US20090108423A1 (en) * | 2007-10-25 | 2009-04-30 | Infineon Technologies Ag | Semiconductor package |
US20090243054A1 (en) * | 2008-03-31 | 2009-10-01 | Broadcom Corporation | I/o connection scheme for qfn leadframe and package structures |
US7626253B2 (en) * | 2005-08-30 | 2009-12-01 | Spansion Llc | Computing device including a stacked semiconductor device |
US20100224971A1 (en) | 2009-03-06 | 2010-09-09 | Tung Lok Li | Leadless integrated circuit package having high density contacts |
US20120025375A1 (en) | 2010-07-30 | 2012-02-02 | Atmel Corporation | Routable array metal integrated circuit package fabricated using partial etching process |
-
2009
- 2009-03-06 US US12/399,200 patent/US8531022B2/en active Active
-
2010
- 2010-03-05 WO PCT/US2010/026394 patent/WO2010102229A1/en active Application Filing
- 2010-03-05 TW TW099106499A patent/TWI491001B/en active
Patent Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6001671A (en) * | 1996-04-18 | 1999-12-14 | Tessera, Inc. | Methods for manufacturing a semiconductor package having a sacrificial layer |
US5830800A (en) | 1997-04-11 | 1998-11-03 | Compeq Manufacturing Company Ltd. | Packaging method for a ball grid array integrated circuit without utilizing a base plate |
US6635957B2 (en) * | 1998-06-10 | 2003-10-21 | Asat Ltd. | Leadless plastic chip carrier with etch back pad singulation and die attach pad array |
US6238952B1 (en) * | 2000-02-29 | 2001-05-29 | Advanced Semiconductor Engineering, Inc. | Low-pin-count chip package and manufacturing method thereof |
US6975022B2 (en) * | 2000-05-24 | 2005-12-13 | Sanyo Electric Co., Ltd. | Board for manufacturing a BGA and method of manufacturing semiconductor device using thereof |
US20020041019A1 (en) * | 2000-08-09 | 2002-04-11 | Gang Heung-Su | Semiconductor package having implantable conductive lands and method for manufacturing the same |
US20020027289A1 (en) | 2000-09-01 | 2002-03-07 | Toshimichi Kurihara | Semiconductor device with an improved bonding pad structure and method of bonding bonding wires to bonding pads |
US20060163702A1 (en) * | 2003-08-01 | 2006-07-27 | Kim Dalson Y S | Chip on board leadframe for semiconductor components having area array |
US7245023B1 (en) | 2004-06-11 | 2007-07-17 | Bridge Semiconductor Corporation | Semiconductor chip assembly with solder-attached ground plane |
US20070108583A1 (en) * | 2005-08-08 | 2007-05-17 | Stats Chippac Ltd. | Integrated circuit package-on-package stacking system |
US7626253B2 (en) * | 2005-08-30 | 2009-12-01 | Spansion Llc | Computing device including a stacked semiconductor device |
US20080093597A1 (en) * | 2006-10-24 | 2008-04-24 | Elpida Memory, Inc. | Semiconductor device |
US20090108423A1 (en) * | 2007-10-25 | 2009-04-30 | Infineon Technologies Ag | Semiconductor package |
US20090243054A1 (en) * | 2008-03-31 | 2009-10-01 | Broadcom Corporation | I/o connection scheme for qfn leadframe and package structures |
US20100224971A1 (en) | 2009-03-06 | 2010-09-09 | Tung Lok Li | Leadless integrated circuit package having high density contacts |
US20120025375A1 (en) | 2010-07-30 | 2012-02-02 | Atmel Corporation | Routable array metal integrated circuit package fabricated using partial etching process |
US20120178214A1 (en) | 2010-07-30 | 2012-07-12 | Atmel Corporation | Routable array metal integrated circuit package fabricated using partial etching process |
Non-Patent Citations (8)
Title |
---|
International Application Serial No. PCT/US2010/026394, Search Report mailed May 7, 2010, 3 pgs. |
International Application Serial No. PCT/US2010/026394, Written Opinion mailed May 7, 2010, 9 pgs. |
International Preliminary Report on Patentability issued in PCT/US2010/026394, on Sep. 15, 2011, 11 pages. |
Notice of Allowance issued in U.S. Appl. No. 12/848,065, filed Nov. 19, 2012, 5 pages. |
Notice of Allowance issued in U.S. Appl. No. 13/426,100, filed Apr. 18, 2013, 6 pgs. |
Restriction Requirement issued in U.S. Appl. No. 12/848,065, filed Jun. 8, 2012, 5 pgs. |
U.S. Office Action issued in U.S. Appl. No. 12/848,065, filed Jul. 24, 2012, 15 pages. |
U.S. Office Action issued in U.S. Appl. No. 13/426,100, filed Dec. 14, 2012, 23 pages. |
Also Published As
Publication number | Publication date |
---|---|
US20100224981A1 (en) | 2010-09-09 |
WO2010102229A1 (en) | 2010-09-10 |
TW201044535A (en) | 2010-12-16 |
TWI491001B (en) | 2015-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8487424B2 (en) | Routable array metal integrated circuit package fabricated using partial etching process | |
EP2248161B1 (en) | Leadless integrated circuit package having high density contacts | |
EP1374305B1 (en) | Enhanced die-down ball grid array and method for making the same | |
US8569082B2 (en) | Semiconductor package with a mold material encapsulating a chip and a portion of a lead frame | |
US6876553B2 (en) | Enhanced die-up ball grid array package with two substrates | |
US20180040541A1 (en) | Semiconductor chip package having heat dissipating structure | |
US7944043B1 (en) | Semiconductor device having improved contact interface reliability and method therefor | |
JPH10200012A (en) | Package of ball grid array semiconductor and its manufacturing method | |
US6704609B1 (en) | Multi-chip semiconductor module and manufacturing process thereof | |
US6876087B2 (en) | Chip scale package with heat dissipating part | |
US20100295160A1 (en) | Quad flat package structure having exposed heat sink, electronic assembly and manufacturing methods thereof | |
US8785253B2 (en) | Leadframe for IC package and method of manufacture | |
US8531022B2 (en) | Routable array metal integrated circuit package | |
KR101394647B1 (en) | Semiconductor package and method for fabricating the same | |
US9190355B2 (en) | Multi-use substrate for integrated circuit | |
KR20040034313A (en) | Semiconductor device and method of manufacturing the same | |
US20010001069A1 (en) | Metal stud array packaging | |
KR20100069001A (en) | Semiconductor package | |
KR100542672B1 (en) | Semiconductor package | |
JP2009177123A (en) | Stacked-chip package structure and manufacturing method thereof | |
JP2004072113A (en) | Thermally strengthened integrated circuit package | |
KR100533762B1 (en) | Semiconductor package | |
KR20020049821A (en) | chip scale semiconductor package in wafer level and method for fabricating the same | |
KR20020065729A (en) | Semicoductor package | |
JPH0652163U (en) | Heat dissipation structure of circuit board device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: ATMEL CORPORATION, CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LAM, KEN M.;REEL/FRAME:022754/0087 Effective date: 20090305 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
AS | Assignment |
Owner name: MORGAN STANLEY SENIOR FUNDING, INC. AS ADMINISTRATIVE AGENT, NEW YORK Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:ATMEL CORPORATION;REEL/FRAME:031912/0173 Effective date: 20131206 Owner name: MORGAN STANLEY SENIOR FUNDING, INC. AS ADMINISTRAT Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:ATMEL CORPORATION;REEL/FRAME:031912/0173 Effective date: 20131206 |
|
AS | Assignment |
Owner name: ATMEL CORPORATION, CALIFORNIA Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT COLLATERAL;ASSIGNOR:MORGAN STANLEY SENIOR FUNDING, INC.;REEL/FRAME:038376/0001 Effective date: 20160404 |
|
AS | Assignment |
Owner name: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT, ILLINOIS Free format text: SECURITY INTEREST;ASSIGNOR:ATMEL CORPORATION;REEL/FRAME:041715/0747 Effective date: 20170208 Owner name: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT Free format text: SECURITY INTEREST;ASSIGNOR:ATMEL CORPORATION;REEL/FRAME:041715/0747 Effective date: 20170208 |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
AS | Assignment |
Owner name: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT, ILLINOIS Free format text: SECURITY INTEREST;ASSIGNORS:MICROCHIP TECHNOLOGY INCORPORATED;SILICON STORAGE TECHNOLOGY, INC.;ATMEL CORPORATION;AND OTHERS;REEL/FRAME:046426/0001 Effective date: 20180529 Owner name: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT Free format text: SECURITY INTEREST;ASSIGNORS:MICROCHIP TECHNOLOGY INCORPORATED;SILICON STORAGE TECHNOLOGY, INC.;ATMEL CORPORATION;AND OTHERS;REEL/FRAME:046426/0001 Effective date: 20180529 |
|
AS | Assignment |
Owner name: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT, CALIFORNIA Free format text: SECURITY INTEREST;ASSIGNORS:MICROCHIP TECHNOLOGY INCORPORATED;SILICON STORAGE TECHNOLOGY, INC.;ATMEL CORPORATION;AND OTHERS;REEL/FRAME:047103/0206 Effective date: 20180914 Owner name: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES C Free format text: SECURITY INTEREST;ASSIGNORS:MICROCHIP TECHNOLOGY INCORPORATED;SILICON STORAGE TECHNOLOGY, INC.;ATMEL CORPORATION;AND OTHERS;REEL/FRAME:047103/0206 Effective date: 20180914 |
|
AS | Assignment |
Owner name: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT, DELAWARE Free format text: SECURITY INTEREST;ASSIGNORS:MICROCHIP TECHNOLOGY INC.;SILICON STORAGE TECHNOLOGY, INC.;ATMEL CORPORATION;AND OTHERS;REEL/FRAME:053311/0305 Effective date: 20200327 |
|
AS | Assignment |
Owner name: SILICON STORAGE TECHNOLOGY, INC., ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT;REEL/FRAME:053466/0011 Effective date: 20200529 Owner name: MICROSEMI CORPORATION, CALIFORNIA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT;REEL/FRAME:053466/0011 Effective date: 20200529 Owner name: MICROSEMI STORAGE SOLUTIONS, INC., ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT;REEL/FRAME:053466/0011 Effective date: 20200529 Owner name: MICROCHIP TECHNOLOGY INC., ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT;REEL/FRAME:053466/0011 Effective date: 20200529 Owner name: ATMEL CORPORATION, ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT;REEL/FRAME:053466/0011 Effective date: 20200529 |
|
AS | Assignment |
Owner name: WELLS FARGO BANK, NATIONAL ASSOCIATION, MINNESOTA Free format text: SECURITY INTEREST;ASSIGNORS:MICROCHIP TECHNOLOGY INC.;SILICON STORAGE TECHNOLOGY, INC.;ATMEL CORPORATION;AND OTHERS;REEL/FRAME:053468/0705 Effective date: 20200529 |
|
AS | Assignment |
Owner name: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT, MINNESOTA Free format text: SECURITY INTEREST;ASSIGNORS:MICROCHIP TECHNOLOGY INCORPORATED;SILICON STORAGE TECHNOLOGY, INC.;ATMEL CORPORATION;AND OTHERS;REEL/FRAME:055671/0612 Effective date: 20201217 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 8 |
|
AS | Assignment |
Owner name: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT, MINNESOTA Free format text: SECURITY INTEREST;ASSIGNORS:MICROCHIP TECHNOLOGY INCORPORATED;SILICON STORAGE TECHNOLOGY, INC.;ATMEL CORPORATION;AND OTHERS;REEL/FRAME:057935/0474 Effective date: 20210528 |
|
AS | Assignment |
Owner name: MICROSEMI STORAGE SOLUTIONS, INC., ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:059333/0222 Effective date: 20220218 Owner name: MICROSEMI CORPORATION, ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:059333/0222 Effective date: 20220218 Owner name: ATMEL CORPORATION, ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:059333/0222 Effective date: 20220218 Owner name: SILICON STORAGE TECHNOLOGY, INC., ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:059333/0222 Effective date: 20220218 Owner name: MICROCHIP TECHNOLOGY INCORPORATED, ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:059333/0222 Effective date: 20220218 |
|
AS | Assignment |
Owner name: ATMEL CORPORATION, ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:059262/0105 Effective date: 20220218 |
|
AS | Assignment |
Owner name: MICROSEMI STORAGE SOLUTIONS, INC., ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059358/0001 Effective date: 20220228 Owner name: MICROSEMI CORPORATION, ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059358/0001 Effective date: 20220228 Owner name: ATMEL CORPORATION, ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059358/0001 Effective date: 20220228 Owner name: SILICON STORAGE TECHNOLOGY, INC., ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059358/0001 Effective date: 20220228 Owner name: MICROCHIP TECHNOLOGY INCORPORATED, ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059358/0001 Effective date: 20220228 |
|
AS | Assignment |
Owner name: MICROSEMI STORAGE SOLUTIONS, INC., ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059863/0400 Effective date: 20220228 Owner name: MICROSEMI CORPORATION, ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059863/0400 Effective date: 20220228 Owner name: ATMEL CORPORATION, ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059863/0400 Effective date: 20220228 Owner name: SILICON STORAGE TECHNOLOGY, INC., ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059863/0400 Effective date: 20220228 Owner name: MICROCHIP TECHNOLOGY INCORPORATED, ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059863/0400 Effective date: 20220228 |
|
AS | Assignment |
Owner name: MICROSEMI STORAGE SOLUTIONS, INC., ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059363/0001 Effective date: 20220228 Owner name: MICROSEMI CORPORATION, ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059363/0001 Effective date: 20220228 Owner name: ATMEL CORPORATION, ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059363/0001 Effective date: 20220228 Owner name: SILICON STORAGE TECHNOLOGY, INC., ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059363/0001 Effective date: 20220228 Owner name: MICROCHIP TECHNOLOGY INCORPORATED, ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059363/0001 Effective date: 20220228 |
|
AS | Assignment |
Owner name: MICROSEMI STORAGE SOLUTIONS, INC., ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:060894/0437 Effective date: 20220228 Owner name: MICROSEMI CORPORATION, ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:060894/0437 Effective date: 20220228 Owner name: ATMEL CORPORATION, ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:060894/0437 Effective date: 20220228 Owner name: SILICON STORAGE TECHNOLOGY, INC., ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:060894/0437 Effective date: 20220228 Owner name: MICROCHIP TECHNOLOGY INCORPORATED, ARIZONA Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:060894/0437 Effective date: 20220228 |