US8531022B2 - Routable array metal integrated circuit package - Google Patents

Routable array metal integrated circuit package Download PDF

Info

Publication number
US8531022B2
US8531022B2 US12/399,200 US39920009A US8531022B2 US 8531022 B2 US8531022 B2 US 8531022B2 US 39920009 A US39920009 A US 39920009A US 8531022 B2 US8531022 B2 US 8531022B2
Authority
US
United States
Prior art keywords
metal
integrated circuit
die
routable
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active, expires
Application number
US12/399,200
Other versions
US20100224981A1 (en
Inventor
Ken M. Lam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atmel Corp
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Priority to US12/399,200 priority Critical patent/US8531022B2/en
Assigned to ATMEL CORPORATION reassignment ATMEL CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LAM, KEN M.
Priority to PCT/US2010/026394 priority patent/WO2010102229A1/en
Priority to TW099106499A priority patent/TWI491001B/en
Publication of US20100224981A1 publication Critical patent/US20100224981A1/en
Application granted granted Critical
Publication of US8531022B2 publication Critical patent/US8531022B2/en
Assigned to MORGAN STANLEY SENIOR FUNDING, INC. AS ADMINISTRATIVE AGENT reassignment MORGAN STANLEY SENIOR FUNDING, INC. AS ADMINISTRATIVE AGENT PATENT SECURITY AGREEMENT Assignors: ATMEL CORPORATION
Assigned to ATMEL CORPORATION reassignment ATMEL CORPORATION TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT COLLATERAL Assignors: MORGAN STANLEY SENIOR FUNDING, INC.
Assigned to JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT reassignment JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ATMEL CORPORATION
Assigned to JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT reassignment JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ATMEL CORPORATION, MICROCHIP TECHNOLOGY INCORPORATED, MICROSEMI CORPORATION, MICROSEMI STORAGE SOLUTIONS, INC., SILICON STORAGE TECHNOLOGY, INC.
Assigned to WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT reassignment WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ATMEL CORPORATION, MICROCHIP TECHNOLOGY INCORPORATED, MICROSEMI CORPORATION, MICROSEMI STORAGE SOLUTIONS, INC., SILICON STORAGE TECHNOLOGY, INC.
Assigned to JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT reassignment JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ATMEL CORPORATION, MICROCHIP TECHNOLOGY INC., MICROSEMI CORPORATION, MICROSEMI STORAGE SOLUTIONS, INC., SILICON STORAGE TECHNOLOGY, INC.
Assigned to SILICON STORAGE TECHNOLOGY, INC., MICROSEMI STORAGE SOLUTIONS, INC., MICROSEMI CORPORATION, ATMEL CORPORATION, MICROCHIP TECHNOLOGY INC. reassignment SILICON STORAGE TECHNOLOGY, INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT
Assigned to WELLS FARGO BANK, NATIONAL ASSOCIATION reassignment WELLS FARGO BANK, NATIONAL ASSOCIATION SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ATMEL CORPORATION, MICROCHIP TECHNOLOGY INC., MICROSEMI CORPORATION, MICROSEMI STORAGE SOLUTIONS, INC., SILICON STORAGE TECHNOLOGY, INC.
Assigned to WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT reassignment WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ATMEL CORPORATION, MICROCHIP TECHNOLOGY INCORPORATED, MICROSEMI CORPORATION, MICROSEMI STORAGE SOLUTIONS, INC., SILICON STORAGE TECHNOLOGY, INC.
Assigned to WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT reassignment WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ATMEL CORPORATION, MICROCHIP TECHNOLOGY INCORPORATED, MICROSEMI CORPORATION, MICROSEMI STORAGE SOLUTIONS, INC., SILICON STORAGE TECHNOLOGY, INC.
Assigned to ATMEL CORPORATION, MICROSEMI CORPORATION, SILICON STORAGE TECHNOLOGY, INC., MICROCHIP TECHNOLOGY INCORPORATED, MICROSEMI STORAGE SOLUTIONS, INC. reassignment ATMEL CORPORATION RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Assigned to ATMEL CORPORATION reassignment ATMEL CORPORATION RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Assigned to ATMEL CORPORATION, MICROCHIP TECHNOLOGY INCORPORATED, MICROSEMI CORPORATION, SILICON STORAGE TECHNOLOGY, INC., MICROSEMI STORAGE SOLUTIONS, INC. reassignment ATMEL CORPORATION RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Assigned to MICROSEMI STORAGE SOLUTIONS, INC., SILICON STORAGE TECHNOLOGY, INC., MICROCHIP TECHNOLOGY INCORPORATED, MICROSEMI CORPORATION, ATMEL CORPORATION reassignment MICROSEMI STORAGE SOLUTIONS, INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Assigned to MICROSEMI STORAGE SOLUTIONS, INC., MICROCHIP TECHNOLOGY INCORPORATED, SILICON STORAGE TECHNOLOGY, INC., ATMEL CORPORATION, MICROSEMI CORPORATION reassignment MICROSEMI STORAGE SOLUTIONS, INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Assigned to ATMEL CORPORATION, MICROCHIP TECHNOLOGY INCORPORATED, SILICON STORAGE TECHNOLOGY, INC., MICROSEMI STORAGE SOLUTIONS, INC., MICROSEMI CORPORATION reassignment ATMEL CORPORATION RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4821Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4828Etching
    • H01L21/4832Etching a temporary substrate after encapsulation process to form leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568Temporary substrate used as encapsulation process aid
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68345Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83001Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855Hardening the adhesive by curing, i.e. thermosetting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85001Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49503Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19043Component type being a resistor

Definitions

  • the invention relates generally to integrated circuit packaging, and more specifically to a routable array metal integrated circuit package.
  • circuits that include one or more integrated circuits, often called “chips”. These integrated circuits are usually relatively large or complex circuits such as computer processors, memory arrays, or other such devices.
  • the actual circuits in the integrated circuit are typically formed using semiconductor devices formed on a substrate, such as doped silicon transistors, resistors, and capacitors formed on a silicon substrate.
  • the combination of a substrate and circuitry formed on the substrate is often referred to as a “die”, and usually has circuitry that is so small that it is impossible to see the individual electronic components or circuit traces with the naked eye. Due to the small size of the circuit elements formed on the substrate, the die is also relatively fragile and can be easily damaged by scratching. Some circuits that operate at high power, such as high performance processors or controllers, also produce more heat than the integrated circuit die can dissipate, and so are not usable without some means of dissipating generated heat.
  • Integrated circuit packages typically include pins, solder balls, or other electrical conductors that are coupled via small lead wires to various parts of the die's electrical circuits, enabling easy and reliable electrical connection from the package's exterior to the die's circuitry.
  • These packages provide a variety functions not related to electrical connection, including carrying heat away from the die to the exterior of the circuit package and perhaps to an external heat sink, and protecting the relatively fragile die from environmental factors such as abrasion, moisture, and shock.
  • packaging an integrated circuit die has several challenges itself. Although a typical integrated circuit die is too small to form connections to without specialized equipment, it is still desirable to keep the size of the packaged die small so that it can be easily integrated into compact or portable electronic devices.
  • the cost of the package is a significant concern, as complex packages that provide good heat management, good protection of the die, and easy connectivity to external circuitry can be a significant part of the cost of a packaged integrated circuit.
  • One example embodiment of the invention comprises an integrated circuit assembly including an integrated circuit die, and a routable metal layer comprising metal traces linking a plurality of wire bond pads to a plurality of external connection pads such that the metal traces are routable under the die area.
  • An electrically nonconductive adhesive layer couples the integrated circuit die to the routable metal layer, and a plurality of wire bonds link circuitry on the integrated circuit die to the wire bond pads in the routable metal layer.
  • An overfill material encapsulates the integrated circuit die, the plurality of wire bonds, and one side of the package's external connection pads. A plurality of solder balls are formed on the plurality of external connection pads.
  • FIGS. 1 a - 1 g show an example integrated circuit assembly fabricated using a sacrificial metal base substrate carrier, consistent with a prior art example.
  • FIG. 2 a shows a side view of an integrated circuit assembly having a routable metal layer, consistent with some embodiments of the invention.
  • FIG. 2 b is a bottom view of the integrated circuit assembly having a routable metal layer of FIG. 2 a , consistent with an example embodiment of the invention.
  • FIGS. 3 a - 3 f illustrate an example method of forming an integrated circuit assembly having a routable metal layer using a sacrificial base layer and localized solder stop, consistent with an example embodiment of the invention.
  • FIGS. 4 a - 4 b illustrate an alternate method of forming an integrated circuit assembly having a routable metal layer using a sacrificial base layer using a full solder mask, consistent with an example embodiment of the invention.
  • FIG. 5 is a top view of a series of integrated circuit assemblies formed on a sacrificial metal strip base layer, consistent with an example embodiment of the invention.
  • the invention disclosed herein comprises in one example embodiment an integrated circuit assembly comprising an integrated circuit die, and a routable metal layer comprising metal traces linking a plurality of wire bond pads to a plurality of external connection pads such that the metal traces are routable under the die area.
  • An electrically nonconductive adhesive layer couples the integrated circuit die to the routable metal layer, and a plurality of wire bonds link circuitry on the integrated circuit die to the wire bond pads in the routable metal layer.
  • An overfill material encapsulates at least the integrated circuit die and the plurality of wire bonds, and one side of the package's external connection pads.
  • a plurality of solder balls are formed on the plurality of external connection pads.
  • Packaging for integrated circuits is typically designed to protect a relatively fragile integrated circuit die from its environment, to provide reliable electrical connection between the die and external circuitry, and in many cases to carry heat away from the die. Designing the packaging takes into consideration not only physical constraints such as these, but also the cost and complexity of the packaging process and the equipment required to package the dice.
  • FIGS. 1 a - 1 g show a sacrificial metal base strip packaging process. This example process starts by using a metal base strip onto which a package is formed, and from which the completed package is eventually separated.
  • a copper base strip 101 has a plating resist pattern applied to the surface of the copper base strip, as shown at 102 .
  • the bottom side of the copper base strip also has an unpatterned, solid layer of plating resist coating to prevent any plating metal deposition onto the bottom surface.
  • the resist pattern on the top side allows a plating step shown in FIG. 1 b to deposit plating material in the patterned resist openings to form wire-bond metal pads 103 and die attach pad 104 .
  • the plating material is one or more metal layers, such as gold, palladium, nickel, and copper.
  • Palladium and gold work well for surfaces of metal layers to which wires will later be bonded, while metals such as nickel or copper are often used for the body of a plating step due to their high conductivity and relatively low cost. Gold is also resistant to oxidation, and so is often used for external plating of metal layers to prevent oxidation of the underlying solderable metal.
  • the resist material 102 applied in FIG. 1 a is removed in FIG. 1 c , leaving only the metal pads 103 and 104 formed in FIG. 1 b on the copper strip 101 .
  • region 104 forms a base for attachment of the integrated circuit die, as shown in FIG. 1 d .
  • the die 105 is attached to the metal plating region 104 , such as by use of an epoxy or other adhesive.
  • the various circuits on the integrated circuit die are then connected to metal pads 103 formed during the plating process by using fine wire in what is known as a wirebond process.
  • the wires 106 connect various electrical contact points on the integrated circuit die to the metal pads 103 , such that the metal pads 103 can be eventually coupled to electrical connections external to the completed package to couple the integrated circuit to external circuitry.
  • the assembly is covered with an over-mold material as shown at 107 in FIG. 1 f to encapsulate and protect the die and the wiring and metal pads.
  • This over-mold material is an electrically nonconductive material, such as epoxy or another suitable material.
  • the encapsulated assembly is then processed to remove the sacrificial metal base strip 101 from the assembly, resulting in the die assembly shown in FIG. 1 g .
  • the copper base strip in this example is removed from the die assembly by a chemical etch that removes copper efficiently but does not attach to or react with the exposed metal used in the plated metal pads 103 and 104 .
  • the metal pads 103 and 104 in the assembly shown in FIG. 1 g can then be coupled to the next level board assembly using solder or conductive adhesive compound, or through other means.
  • the metal pad 104 that supports the die is the same metal that is used to form the pads 103 , but no metal pad formed in the plating process of FIG. 1 b is connected to any other metal pad.
  • the bond wires shown at 106 of FIG. 1 e couple the die's circuits to the metal pads 103 , enabling connection to external circuitry. Because the bond wires cannot cross one another without risking electrically coupling one wire to the other due to accidental contact, this packaging system does not provide the ability to cross or route wires to different pads.
  • One example embodiment of the invention addresses some problems with the assembly of FIG. 1 by providing a sacrificial metal base strip packaging process that includes a routable layer that is formed by pattern plating. This provides improved flexibility in routing circuit traces to facilitate external connections
  • FIGS. 2 a and 2 b show a pattern-plated sacrificial metal strip die package including a Ball Grid Array (BGA) format, consistent with an example embodiment of the invention. Other package formats without solder balls are also commonly used.
  • BGA Ball Grid Array
  • FIG. 2 a the die package is inverted from the example die package shown in FIG. 1 g , and includes a routable metal layer in place of the large pad 104 onto which the die is mounted in FIG. 1 .
  • a routable metal layer of conductive traces 204 is formed on the sacrificial metal layer, including in the area in which the die is mounted.
  • the traces are coupled to the die via wire bond connections to metal wirebond pads 203 , which are coupled via the metal layer conductive traces 204 to package pads 201 .
  • Solder balls 202 are here formed on package pads 201 in openings in solder mask layer 206 , for connection to external circuitry.
  • an electrically non-conductive die-attach adhesive material 205 such as epoxy compound, is used for die-attach. This provides a compact, efficient package, with enhanced flexibility in configuration due to the routable metal traces in the metal layer.
  • FIG. 2 b A bottom view of the example package of FIG. 2 a is shown in FIG. 2 b .
  • conductive traces 204 are shown to link various solder balls 202 to various metal wirebond pads 203 , such that a wirebond connection from the die to the wirebond pad 203 is electrically coupled via conductive traces 204 to the solder balls 202 .
  • Some solder balls, such as power and ground connections, may be connected to multiple pads on the routable metal layer so that multiple power and ground connections can be made between the various circuits on the die and the external power source.
  • An example is shown in FIG. 2 b at pads 207 , which are coupled to one another and to a single solder ball via metal traces on the routable metal layer.
  • FIGS. 3 a - 3 f illustrate a method of forming a die package having a routable metal layer using a sacrificial metal strip integrated circuit packaging process, consistent with an example embodiment of the invention.
  • the sacrificial metal strip is a copper metal base 301
  • a routable or patterned metal circuit layer 302 is formed on the strip, such as by using a photo-definable plating resist material and photo-mask as described in greater detail with respect to the example of FIG. 1 .
  • the metal layer here has one or more layers of metal in a metal-stack, where different types of metal may be used in different layers to provide different properties.
  • the metal routable layer 302 which comprises wirebonding pad features 203 , package pad features 201 , and routing trace features 204 as illustrated in FIGS. 2 a and 2 b , includes in one embodiment a wire-bondable metal on the top surface, such as palladium, silver, or gold.
  • a diffusion barrier metal layer such as nickel is immediately below the wire-bondable metal layer, and a conductive metal such as copper is next.
  • a solder diffusion barrier metal such as nickel is formed, and the bottom layer is an oxidation prevention metal such as silver, gold, or palladium.
  • more layers, other layers, or only select layers from the above example are included in the routable metal layer 302 .
  • the die is attached to the routable metal layer in FIG. 3 b via an electrically nonconductive epoxy layer 303 , or via another nonconductive adhesive material.
  • the die is therefore not directly electrically connected to any routable metal traces routed under the die, but is instead coupled to the routable metal layer via bond wires 304 .
  • the bond wires 304 are attached to various pads 305 , which are coupled via the routable metal layer to external circuit connections.
  • the assembly is then encased as shown in FIG. 3 c with an overmold material 306 , which protects the die and the bond wires from abrasion, moisture, and other environmental factors.
  • the sacrificial metal strip copper base is then removed as shown in FIG. 3 d (shown upside-down), such as by chemical etching. This leaves the routable metal layer and the die-attach epoxy exposed from the overmold applied in FIG. 3 c .
  • the sacrificial metal strip is in some examples a long or continuous metal strip that is cut into individual die packages near the end of the packaging process, such as by sawing the metal strip or the die package, as shown in FIG. 5 .
  • solder balls are applied to the exposed solder ball regions 309 of the routable metal layer as shown in FIG. 3 d .
  • solder stop 307 is applied at various points to constrain solder from flowing onto metal traces 204 during solder ball attachment to the pad areas as shown at 308 in FIG. 3 f.
  • FIGS. 4 a and 4 b present an alternate method of applying solder balls, using a full solder mask layer instead of solder stop as employed in FIGS. 3 e and 3 f .
  • a permanent solder mask 401 is applied to the entire bottom side of the integrated circuit package except for the area over the package metal pads that will receive solder balls, as shown at 402 in FIG. 4 b .
  • This solder mask layer can be of a photo-definable or non-photo-definable characteristic, in ink or dry-film form, and can be applied using screening or lamination process in various embodiments.
  • a series of integrated circuit assemblies can be formed on a long or continuous sacrificial metal strip base layer, such as is shown in FIG. 5 .
  • the individual integrated circuit packages 501 are then separated from one another, such as by sawing, in the final stages of integrated circuit package production.
  • the routable metal layer integrated circuit assembly technology described herein therefore provides a variety of advantages over prior art integrated circuit mounting technologies such as the example illustrated in FIG. 1 , including providing the advantage of full layer routing capability.
  • a typical BGA package uses an organic substrate for routing. Eliminating an organic substrate in the routable metal layer integrated circuit examples illustrated in FIGS. 2-4 makes these examples significantly less expensive than prior technologies, and substantially reduces the height of the finished integrated circuit assembly which allows for thinner devices such as cell phones, personal digital assistant devices, global positioning systems, and other portable or handheld electronic devices.

Abstract

An integrated circuit assembly comprises an integrated circuit die, and a routable metal layer comprising metal traces linking a plurality of wire bond pads to a plurality of external connection pads such that the metal traces are routable under the die area. An electrically nonconductive adhesive layer couples the integrated circuit die to the routable metal layer, and a plurality of wire bonds link circuitry on the integrated circuit die to the wire bond pads in the routable metal layer. An overfill material encapsulates at least the integrated circuit die and the plurality of wire bonds, and a plurality of solder balls are formed on the plurality of external connection pads.

Description

FIELD OF THE INVENTION
The invention relates generally to integrated circuit packaging, and more specifically to a routable array metal integrated circuit package.
BACKGROUND
Most electronic or computerized devices have electronic circuits that include one or more integrated circuits, often called “chips”. These integrated circuits are usually relatively large or complex circuits such as computer processors, memory arrays, or other such devices. The actual circuits in the integrated circuit are typically formed using semiconductor devices formed on a substrate, such as doped silicon transistors, resistors, and capacitors formed on a silicon substrate.
The combination of a substrate and circuitry formed on the substrate is often referred to as a “die”, and usually has circuitry that is so small that it is impossible to see the individual electronic components or circuit traces with the naked eye. Due to the small size of the circuit elements formed on the substrate, the die is also relatively fragile and can be easily damaged by scratching. Some circuits that operate at high power, such as high performance processors or controllers, also produce more heat than the integrated circuit die can dissipate, and so are not usable without some means of dissipating generated heat.
For these and other reasons, almost all integrated circuit dice are provided to the manufacturers of devices such as computers or cell phones in packages that are designed to protect the integrated circuit while making it easy to connect to other circuitry. Integrated circuit packages typically include pins, solder balls, or other electrical conductors that are coupled via small lead wires to various parts of the die's electrical circuits, enabling easy and reliable electrical connection from the package's exterior to the die's circuitry. These packages provide a variety functions not related to electrical connection, including carrying heat away from the die to the exterior of the circuit package and perhaps to an external heat sink, and protecting the relatively fragile die from environmental factors such as abrasion, moisture, and shock.
But, packaging an integrated circuit die has several challenges itself. Although a typical integrated circuit die is too small to form connections to without specialized equipment, it is still desirable to keep the size of the packaged die small so that it can be easily integrated into compact or portable electronic devices. The cost of the package is a significant concern, as complex packages that provide good heat management, good protection of the die, and easy connectivity to external circuitry can be a significant part of the cost of a packaged integrated circuit.
It is therefore desired to package integrated circuit dice in a manner that addresses such commercial needs.
SUMMARY
One example embodiment of the invention comprises an integrated circuit assembly including an integrated circuit die, and a routable metal layer comprising metal traces linking a plurality of wire bond pads to a plurality of external connection pads such that the metal traces are routable under the die area. An electrically nonconductive adhesive layer couples the integrated circuit die to the routable metal layer, and a plurality of wire bonds link circuitry on the integrated circuit die to the wire bond pads in the routable metal layer. An overfill material encapsulates the integrated circuit die, the plurality of wire bonds, and one side of the package's external connection pads. A plurality of solder balls are formed on the plurality of external connection pads.
BRIEF DESCRIPTION OF THE FIGURES
FIGS. 1 a-1 g show an example integrated circuit assembly fabricated using a sacrificial metal base substrate carrier, consistent with a prior art example.
FIG. 2 a shows a side view of an integrated circuit assembly having a routable metal layer, consistent with some embodiments of the invention.
FIG. 2 b is a bottom view of the integrated circuit assembly having a routable metal layer of FIG. 2 a, consistent with an example embodiment of the invention.
FIGS. 3 a-3 f illustrate an example method of forming an integrated circuit assembly having a routable metal layer using a sacrificial base layer and localized solder stop, consistent with an example embodiment of the invention.
FIGS. 4 a-4 b illustrate an alternate method of forming an integrated circuit assembly having a routable metal layer using a sacrificial base layer using a full solder mask, consistent with an example embodiment of the invention.
FIG. 5 is a top view of a series of integrated circuit assemblies formed on a sacrificial metal strip base layer, consistent with an example embodiment of the invention.
DETAILED DESCRIPTION
In the following detailed description of example embodiments of the invention, reference is made to specific example embodiments of the invention by way of drawings and illustrations. These examples are described in sufficient detail to enable those skilled in the art to practice the invention, and serve to illustrate how the invention may be applied to various purposes or embodiments. Other embodiments of the invention exist and are within the scope of the invention, and logical, mechanical, electrical, and other changes may be made without departing from the subject or scope of the present invention.
Features or limitations of various embodiments of the invention described herein, however essential to the example embodiments in which they are incorporated, do not limit other embodiments of the invention or the invention as a whole, and any reference to the invention, its elements, operation, and application do not limit the invention as a whole but serve only to define these example embodiments. The following detailed description does not, therefore, limit the scope of the invention, which is defined only by the appended claims.
The invention disclosed herein comprises in one example embodiment an integrated circuit assembly comprising an integrated circuit die, and a routable metal layer comprising metal traces linking a plurality of wire bond pads to a plurality of external connection pads such that the metal traces are routable under the die area. An electrically nonconductive adhesive layer couples the integrated circuit die to the routable metal layer, and a plurality of wire bonds link circuitry on the integrated circuit die to the wire bond pads in the routable metal layer. An overfill material encapsulates at least the integrated circuit die and the plurality of wire bonds, and one side of the package's external connection pads. In a further example, a plurality of solder balls are formed on the plurality of external connection pads.
Packaging for integrated circuits is typically designed to protect a relatively fragile integrated circuit die from its environment, to provide reliable electrical connection between the die and external circuitry, and in many cases to carry heat away from the die. Designing the packaging takes into consideration not only physical constraints such as these, but also the cost and complexity of the packaging process and the equipment required to package the dice.
One solution to packaging a die is illustrated in FIGS. 1 a-1 g, which show a sacrificial metal base strip packaging process. This example process starts by using a metal base strip onto which a package is formed, and from which the completed package is eventually separated.
In FIG. 1 a, a copper base strip 101 has a plating resist pattern applied to the surface of the copper base strip, as shown at 102. The bottom side of the copper base strip also has an unpatterned, solid layer of plating resist coating to prevent any plating metal deposition onto the bottom surface. The resist pattern on the top side allows a plating step shown in FIG. 1 b to deposit plating material in the patterned resist openings to form wire-bond metal pads 103 and die attach pad 104. In various embodiments, the plating material is one or more metal layers, such as gold, palladium, nickel, and copper. Palladium and gold work well for surfaces of metal layers to which wires will later be bonded, while metals such as nickel or copper are often used for the body of a plating step due to their high conductivity and relatively low cost. Gold is also resistant to oxidation, and so is often used for external plating of metal layers to prevent oxidation of the underlying solderable metal.
Once the metal plating process is completed, the resist material 102 applied in FIG. 1 a is removed in FIG. 1 c, leaving only the metal pads 103 and 104 formed in FIG. 1 b on the copper strip 101. Here, region 104 forms a base for attachment of the integrated circuit die, as shown in FIG. 1 d. The die 105 is attached to the metal plating region 104, such as by use of an epoxy or other adhesive.
The various circuits on the integrated circuit die are then connected to metal pads 103 formed during the plating process by using fine wire in what is known as a wirebond process. As shown in FIG. 1 e, the wires 106 connect various electrical contact points on the integrated circuit die to the metal pads 103, such that the metal pads 103 can be eventually coupled to electrical connections external to the completed package to couple the integrated circuit to external circuitry.
After the die is coupled via the wirebond wires to the metal pads formed in the plating process, the assembly is covered with an over-mold material as shown at 107 in FIG. 1 f to encapsulate and protect the die and the wiring and metal pads. This over-mold material is an electrically nonconductive material, such as epoxy or another suitable material.
The encapsulated assembly is then processed to remove the sacrificial metal base strip 101 from the assembly, resulting in the die assembly shown in FIG. 1 g. The copper base strip in this example is removed from the die assembly by a chemical etch that removes copper efficiently but does not attach to or react with the exposed metal used in the plated metal pads 103 and 104. The metal pads 103 and 104 in the assembly shown in FIG. 1 g can then be coupled to the next level board assembly using solder or conductive adhesive compound, or through other means.
The metal pad 104 that supports the die is the same metal that is used to form the pads 103, but no metal pad formed in the plating process of FIG. 1 b is connected to any other metal pad. The bond wires shown at 106 of FIG. 1 e couple the die's circuits to the metal pads 103, enabling connection to external circuitry. Because the bond wires cannot cross one another without risking electrically coupling one wire to the other due to accidental contact, this packaging system does not provide the ability to cross or route wires to different pads.
One example embodiment of the invention addresses some problems with the assembly of FIG. 1 by providing a sacrificial metal base strip packaging process that includes a routable layer that is formed by pattern plating. This provides improved flexibility in routing circuit traces to facilitate external connections
FIGS. 2 a and 2 b show a pattern-plated sacrificial metal strip die package including a Ball Grid Array (BGA) format, consistent with an example embodiment of the invention. Other package formats without solder balls are also commonly used. In FIG. 2 a, the die package is inverted from the example die package shown in FIG. 1 g, and includes a routable metal layer in place of the large pad 104 onto which the die is mounted in FIG. 1.
Here, a routable metal layer of conductive traces 204 is formed on the sacrificial metal layer, including in the area in which the die is mounted. The traces are coupled to the die via wire bond connections to metal wirebond pads 203, which are coupled via the metal layer conductive traces 204 to package pads 201. Solder balls 202 are here formed on package pads 201 in openings in solder mask layer 206, for connection to external circuitry. To prevent the die, which is typically silicon material, from electrically shorting to the package pad metal 201 and metal traces 204, an electrically non-conductive die-attach adhesive material 205, such as epoxy compound, is used for die-attach. This provides a compact, efficient package, with enhanced flexibility in configuration due to the routable metal traces in the metal layer.
A bottom view of the example package of FIG. 2 a is shown in FIG. 2 b. Here, conductive traces 204 are shown to link various solder balls 202 to various metal wirebond pads 203, such that a wirebond connection from the die to the wirebond pad 203 is electrically coupled via conductive traces 204 to the solder balls 202. Some solder balls, such as power and ground connections, may be connected to multiple pads on the routable metal layer so that multiple power and ground connections can be made between the various circuits on the die and the external power source. An example is shown in FIG. 2 b at pads 207, which are coupled to one another and to a single solder ball via metal traces on the routable metal layer.
FIGS. 3 a-3 f illustrate a method of forming a die package having a routable metal layer using a sacrificial metal strip integrated circuit packaging process, consistent with an example embodiment of the invention. In FIG. 3 a, the sacrificial metal strip is a copper metal base 301, and a routable or patterned metal circuit layer 302 is formed on the strip, such as by using a photo-definable plating resist material and photo-mask as described in greater detail with respect to the example of FIG. 1. The metal layer here has one or more layers of metal in a metal-stack, where different types of metal may be used in different layers to provide different properties.
For example, the metal routable layer 302, which comprises wirebonding pad features 203, package pad features 201, and routing trace features 204 as illustrated in FIGS. 2 a and 2 b, includes in one embodiment a wire-bondable metal on the top surface, such as palladium, silver, or gold. A diffusion barrier metal layer such as nickel is immediately below the wire-bondable metal layer, and a conductive metal such as copper is next. Below that a solder diffusion barrier metal such as nickel is formed, and the bottom layer is an oxidation prevention metal such as silver, gold, or palladium. In alternate embodiments, more layers, other layers, or only select layers from the above example are included in the routable metal layer 302.
The die is attached to the routable metal layer in FIG. 3 b via an electrically nonconductive epoxy layer 303, or via another nonconductive adhesive material. The die is therefore not directly electrically connected to any routable metal traces routed under the die, but is instead coupled to the routable metal layer via bond wires 304. The bond wires 304 are attached to various pads 305, which are coupled via the routable metal layer to external circuit connections.
The assembly is then encased as shown in FIG. 3 c with an overmold material 306, which protects the die and the bond wires from abrasion, moisture, and other environmental factors. The sacrificial metal strip copper base is then removed as shown in FIG. 3 d (shown upside-down), such as by chemical etching. This leaves the routable metal layer and the die-attach epoxy exposed from the overmold applied in FIG. 3 c. The sacrificial metal strip is in some examples a long or continuous metal strip that is cut into individual die packages near the end of the packaging process, such as by sawing the metal strip or the die package, as shown in FIG. 5.
Solder balls are applied to the exposed solder ball regions 309 of the routable metal layer as shown in FIG. 3 d. In FIG. 3 e, solder stop 307 is applied at various points to constrain solder from flowing onto metal traces 204 during solder ball attachment to the pad areas as shown at 308 in FIG. 3 f.
FIGS. 4 a and 4 b present an alternate method of applying solder balls, using a full solder mask layer instead of solder stop as employed in FIGS. 3 e and 3 f. In FIG. 4 a, a permanent solder mask 401 is applied to the entire bottom side of the integrated circuit package except for the area over the package metal pads that will receive solder balls, as shown at 402 in FIG. 4 b. This solder mask layer can be of a photo-definable or non-photo-definable characteristic, in ink or dry-film form, and can be applied using screening or lamination process in various embodiments.
As previously discussed in the example presented in FIG. 3, a series of integrated circuit assemblies can be formed on a long or continuous sacrificial metal strip base layer, such as is shown in FIG. 5. The individual integrated circuit packages 501 are then separated from one another, such as by sawing, in the final stages of integrated circuit package production.
The routable metal layer integrated circuit assembly technology described herein therefore provides a variety of advantages over prior art integrated circuit mounting technologies such as the example illustrated in FIG. 1, including providing the advantage of full layer routing capability. A typical BGA package uses an organic substrate for routing. Eliminating an organic substrate in the routable metal layer integrated circuit examples illustrated in FIGS. 2-4 makes these examples significantly less expensive than prior technologies, and substantially reduces the height of the finished integrated circuit assembly which allows for thinner devices such as cell phones, personal digital assistant devices, global positioning systems, and other portable or handheld electronic devices.
Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that any arrangement that achieve the same purpose, structure, or function may be substituted for the specific embodiments shown. This application is intended to cover any adaptations or variations of the example embodiments of the invention described herein. It is intended that this invention be limited only by the claims, and the full scope of equivalents thereof.

Claims (19)

The invention claimed is:
1. An integrated circuit assembly, comprising:
an integrated circuit die;
a routable metal layer comprising routable metal traces configured for coupling wire bond pads to package pads that are configured as a mount for the die, the routable metal layer including at least a pair of metal traces that directly couple a pair of wire bond pads to one another without an intervening package pad under an area on which the die is mounted;
an electrically nonconductive adhesive layer coupling the integrated circuit die to the routable metal layer such that the integrated circuit die is not directly electrically connected to the metal traces routed under the area on which the die is mounted; and
a plurality of bond wires linking circuitry on the integrated circuit die to the wire bond pads in the routable metal layer, forming electrical connections between the integrated circuit die and the routable metal layer.
2. The integrated circuit assembly of claim 1, further comprising a continuous sacrificial metal strip upon which a plurality of die packages are formed, each die package including an integrated circuit die and a routable metal layer.
3. The integrated circuit assembly of claim 1, further comprising an overfill material encapsulating at least the integrated circuit die and the plurality of bond wires.
4. The integrated circuit assembly of claim 3, wherein the overfill material further fills at least some gaps between the metal traces in the routable metal layer.
5. The integrated circuit assembly of claim 1, wherein a plurality of solder balls are formed on exposed solder ball regions of the routable metal layer.
6. The integrated circuit assembly of claim 5, wherein at least one of solder stop or a solder mask are used to constrain solder from flowing onto the metal traces during attaching the solder balls to the exposed solder ball regions of the routable metal layer.
7. The integrated circuit assembly of claim 1, wherein the metal traces are routed under the area on which the die is adhesively attached to the routable metal layer.
8. The integrated circuit assembly of claim 7, wherein the electrically nonconductive adhesive layer fills gaps between two or more metal traces routed in the routable metal layer under the area on which the die is adhesively attached to the routable metal layer.
9. The integrated circuit assembly of claim 1, wherein the routable metal layer comprises layers of metal in a metal stack, the layers of metal comprising:
a top surface including a wire-bondable metal that is selected from the group consisting of palladium and silver,
a layer of diffusion barrier metal including nickel immediately below the top surface,
a layer of conductive metal including copper immediately below the layer of diffusion barrier metal,
a layer of solder diffusion barrier metal including nickel below the layer of conductive metal, and
a bottom layer including a layer of oxidation prevention metal that is selected from the group consisting of palladium and silver.
10. The integrated circuit assembly of claim 5, wherein the exposed solder ball regions of the routable metal layer include a package pad.
11. The integrated circuit assembly of claim 1, wherein the metal traces are configured for coupling a subset of the wire bond pads to one another and to a package pad connected to an external power source such that a plurality of power and ground connections are provided between circuitry on the die and the external power source.
12. An integrated circuit assembly, comprising:
an integrated circuit die;
a routable metal layer comprising metal traces configured for coupling wire bond pads to package pads, the routable metal layer including at least a pair of metal traces that directly couple a pair of wire bond pads to one another without an intervening package pad under an area on which the die is mounted, the package pads configured for mounting the die;
a plurality of solder balls formed on exposed solder ball regions of the routable metal layer; and
a ceramic encasing configured for encasing the integrated circuit assembly.
13. The integrated circuit assembly of claim 12, wherein the plurality of solder balls electrically couple the integrated circuit assembly to a printed circuit board.
14. The integrated circuit assembly of claim 12, wherein the routable metal layer includes layers of metal, the layers of metal comprising:
a top surface including a wire-bondable metal, the wire-bondable metal being selected from a group including palladium and silver,
a layer of diffusion barrier metal immediately below the top surface, the diffusion barrier metal including nickel,
a layer of conductive metal immediately below the layer of diffusion barrier metal, the conductive metal including copper,
a layer of solder diffusion barrier metal below the layer of conductive metal, the solder the diffusion barrier metal including nickel, and
a layer of oxidation prevention metal as a bottom layer, the oxidation prevention metal being selected from a group including palladium and silver.
15. The integrated circuit assembly of claim 12, wherein the exposed solder ball regions of the routable metal layer include a package pad.
16. The integrated circuit assembly of claim 12, wherein the metal traces are configured for coupling a subset of the wire bond pads to one another and to a package pad connected to an external power source such that a plurality of power and ground connections are provided between circuitry on the die and the external power source.
17. The integrated circuit assembly of claim 16, wherein one or more solder balls are connected to the external power source and to the wire bond pads coupled to one another such that the plurality of power and ground connections are provided between circuitry on the integrated circuit die and the external power source.
18. An integrated circuit assembly, comprising:
an integrated circuit die; and
a routable metal layer including metal traces configured for coupling wire bond pads to package pads, the package pads being configured as a mount for the integrated circuit die, the routable metal layer including at least a pair of metal traces that directly couple a pair of wire bond pads to one another without an intervening package pad under an area on which the integrated circuit die is mounted.
19. The integrated circuit assembly of claim 18, comprising:
a plurality of solder balls formed on exposed solder ball regions on the package pads, the plurality of solder balls including a solder ball that is connected to an external power source and attached to a package pad that is coupled to a subset of the wire bond pads using the metal traces such that electrical and ground connections are provided to circuitry on the integrated circuit die that are connected to the subset of the wire bond pads.
US12/399,200 2009-03-06 2009-03-06 Routable array metal integrated circuit package Active 2029-09-19 US8531022B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/399,200 US8531022B2 (en) 2009-03-06 2009-03-06 Routable array metal integrated circuit package
PCT/US2010/026394 WO2010102229A1 (en) 2009-03-06 2010-03-05 Wire-bonded integrated circuit package without package substrate and including metal traces linking to external connection pads routed under integrated circuit die.
TW099106499A TWI491001B (en) 2009-03-06 2010-03-05 Integrated circuit assembly

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/399,200 US8531022B2 (en) 2009-03-06 2009-03-06 Routable array metal integrated circuit package

Publications (2)

Publication Number Publication Date
US20100224981A1 US20100224981A1 (en) 2010-09-09
US8531022B2 true US8531022B2 (en) 2013-09-10

Family

ID=42104427

Family Applications (1)

Application Number Title Priority Date Filing Date
US12/399,200 Active 2029-09-19 US8531022B2 (en) 2009-03-06 2009-03-06 Routable array metal integrated circuit package

Country Status (3)

Country Link
US (1) US8531022B2 (en)
TW (1) TWI491001B (en)
WO (1) WO2010102229A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324641B2 (en) * 2012-03-20 2016-04-26 Stats Chippac Ltd. Integrated circuit packaging system with external interconnect and method of manufacture thereof

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5830800A (en) 1997-04-11 1998-11-03 Compeq Manufacturing Company Ltd. Packaging method for a ball grid array integrated circuit without utilizing a base plate
US6001671A (en) * 1996-04-18 1999-12-14 Tessera, Inc. Methods for manufacturing a semiconductor package having a sacrificial layer
US6238952B1 (en) * 2000-02-29 2001-05-29 Advanced Semiconductor Engineering, Inc. Low-pin-count chip package and manufacturing method thereof
US20020027289A1 (en) 2000-09-01 2002-03-07 Toshimichi Kurihara Semiconductor device with an improved bonding pad structure and method of bonding bonding wires to bonding pads
US20020041019A1 (en) * 2000-08-09 2002-04-11 Gang Heung-Su Semiconductor package having implantable conductive lands and method for manufacturing the same
US6635957B2 (en) * 1998-06-10 2003-10-21 Asat Ltd. Leadless plastic chip carrier with etch back pad singulation and die attach pad array
US6975022B2 (en) * 2000-05-24 2005-12-13 Sanyo Electric Co., Ltd. Board for manufacturing a BGA and method of manufacturing semiconductor device using thereof
US20060163702A1 (en) * 2003-08-01 2006-07-27 Kim Dalson Y S Chip on board leadframe for semiconductor components having area array
US20070108583A1 (en) * 2005-08-08 2007-05-17 Stats Chippac Ltd. Integrated circuit package-on-package stacking system
US7245023B1 (en) 2004-06-11 2007-07-17 Bridge Semiconductor Corporation Semiconductor chip assembly with solder-attached ground plane
US20080093597A1 (en) * 2006-10-24 2008-04-24 Elpida Memory, Inc. Semiconductor device
US20090108423A1 (en) * 2007-10-25 2009-04-30 Infineon Technologies Ag Semiconductor package
US20090243054A1 (en) * 2008-03-31 2009-10-01 Broadcom Corporation I/o connection scheme for qfn leadframe and package structures
US7626253B2 (en) * 2005-08-30 2009-12-01 Spansion Llc Computing device including a stacked semiconductor device
US20100224971A1 (en) 2009-03-06 2010-09-09 Tung Lok Li Leadless integrated circuit package having high density contacts
US20120025375A1 (en) 2010-07-30 2012-02-02 Atmel Corporation Routable array metal integrated circuit package fabricated using partial etching process

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6001671A (en) * 1996-04-18 1999-12-14 Tessera, Inc. Methods for manufacturing a semiconductor package having a sacrificial layer
US5830800A (en) 1997-04-11 1998-11-03 Compeq Manufacturing Company Ltd. Packaging method for a ball grid array integrated circuit without utilizing a base plate
US6635957B2 (en) * 1998-06-10 2003-10-21 Asat Ltd. Leadless plastic chip carrier with etch back pad singulation and die attach pad array
US6238952B1 (en) * 2000-02-29 2001-05-29 Advanced Semiconductor Engineering, Inc. Low-pin-count chip package and manufacturing method thereof
US6975022B2 (en) * 2000-05-24 2005-12-13 Sanyo Electric Co., Ltd. Board for manufacturing a BGA and method of manufacturing semiconductor device using thereof
US20020041019A1 (en) * 2000-08-09 2002-04-11 Gang Heung-Su Semiconductor package having implantable conductive lands and method for manufacturing the same
US20020027289A1 (en) 2000-09-01 2002-03-07 Toshimichi Kurihara Semiconductor device with an improved bonding pad structure and method of bonding bonding wires to bonding pads
US20060163702A1 (en) * 2003-08-01 2006-07-27 Kim Dalson Y S Chip on board leadframe for semiconductor components having area array
US7245023B1 (en) 2004-06-11 2007-07-17 Bridge Semiconductor Corporation Semiconductor chip assembly with solder-attached ground plane
US20070108583A1 (en) * 2005-08-08 2007-05-17 Stats Chippac Ltd. Integrated circuit package-on-package stacking system
US7626253B2 (en) * 2005-08-30 2009-12-01 Spansion Llc Computing device including a stacked semiconductor device
US20080093597A1 (en) * 2006-10-24 2008-04-24 Elpida Memory, Inc. Semiconductor device
US20090108423A1 (en) * 2007-10-25 2009-04-30 Infineon Technologies Ag Semiconductor package
US20090243054A1 (en) * 2008-03-31 2009-10-01 Broadcom Corporation I/o connection scheme for qfn leadframe and package structures
US20100224971A1 (en) 2009-03-06 2010-09-09 Tung Lok Li Leadless integrated circuit package having high density contacts
US20120025375A1 (en) 2010-07-30 2012-02-02 Atmel Corporation Routable array metal integrated circuit package fabricated using partial etching process
US20120178214A1 (en) 2010-07-30 2012-07-12 Atmel Corporation Routable array metal integrated circuit package fabricated using partial etching process

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
International Application Serial No. PCT/US2010/026394, Search Report mailed May 7, 2010, 3 pgs.
International Application Serial No. PCT/US2010/026394, Written Opinion mailed May 7, 2010, 9 pgs.
International Preliminary Report on Patentability issued in PCT/US2010/026394, on Sep. 15, 2011, 11 pages.
Notice of Allowance issued in U.S. Appl. No. 12/848,065, filed Nov. 19, 2012, 5 pages.
Notice of Allowance issued in U.S. Appl. No. 13/426,100, filed Apr. 18, 2013, 6 pgs.
Restriction Requirement issued in U.S. Appl. No. 12/848,065, filed Jun. 8, 2012, 5 pgs.
U.S. Office Action issued in U.S. Appl. No. 12/848,065, filed Jul. 24, 2012, 15 pages.
U.S. Office Action issued in U.S. Appl. No. 13/426,100, filed Dec. 14, 2012, 23 pages.

Also Published As

Publication number Publication date
US20100224981A1 (en) 2010-09-09
WO2010102229A1 (en) 2010-09-10
TW201044535A (en) 2010-12-16
TWI491001B (en) 2015-07-01

Similar Documents

Publication Publication Date Title
US8487424B2 (en) Routable array metal integrated circuit package fabricated using partial etching process
EP2248161B1 (en) Leadless integrated circuit package having high density contacts
EP1374305B1 (en) Enhanced die-down ball grid array and method for making the same
US8569082B2 (en) Semiconductor package with a mold material encapsulating a chip and a portion of a lead frame
US6876553B2 (en) Enhanced die-up ball grid array package with two substrates
US20180040541A1 (en) Semiconductor chip package having heat dissipating structure
US7944043B1 (en) Semiconductor device having improved contact interface reliability and method therefor
JPH10200012A (en) Package of ball grid array semiconductor and its manufacturing method
US6704609B1 (en) Multi-chip semiconductor module and manufacturing process thereof
US6876087B2 (en) Chip scale package with heat dissipating part
US20100295160A1 (en) Quad flat package structure having exposed heat sink, electronic assembly and manufacturing methods thereof
US8785253B2 (en) Leadframe for IC package and method of manufacture
US8531022B2 (en) Routable array metal integrated circuit package
KR101394647B1 (en) Semiconductor package and method for fabricating the same
US9190355B2 (en) Multi-use substrate for integrated circuit
KR20040034313A (en) Semiconductor device and method of manufacturing the same
US20010001069A1 (en) Metal stud array packaging
KR20100069001A (en) Semiconductor package
KR100542672B1 (en) Semiconductor package
JP2009177123A (en) Stacked-chip package structure and manufacturing method thereof
JP2004072113A (en) Thermally strengthened integrated circuit package
KR100533762B1 (en) Semiconductor package
KR20020049821A (en) chip scale semiconductor package in wafer level and method for fabricating the same
KR20020065729A (en) Semicoductor package
JPH0652163U (en) Heat dissipation structure of circuit board device

Legal Events

Date Code Title Description
AS Assignment

Owner name: ATMEL CORPORATION, CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LAM, KEN M.;REEL/FRAME:022754/0087

Effective date: 20090305

STCF Information on status: patent grant

Free format text: PATENTED CASE

AS Assignment

Owner name: MORGAN STANLEY SENIOR FUNDING, INC. AS ADMINISTRATIVE AGENT, NEW YORK

Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:ATMEL CORPORATION;REEL/FRAME:031912/0173

Effective date: 20131206

Owner name: MORGAN STANLEY SENIOR FUNDING, INC. AS ADMINISTRAT

Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:ATMEL CORPORATION;REEL/FRAME:031912/0173

Effective date: 20131206

AS Assignment

Owner name: ATMEL CORPORATION, CALIFORNIA

Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT COLLATERAL;ASSIGNOR:MORGAN STANLEY SENIOR FUNDING, INC.;REEL/FRAME:038376/0001

Effective date: 20160404

AS Assignment

Owner name: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT, ILLINOIS

Free format text: SECURITY INTEREST;ASSIGNOR:ATMEL CORPORATION;REEL/FRAME:041715/0747

Effective date: 20170208

Owner name: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT

Free format text: SECURITY INTEREST;ASSIGNOR:ATMEL CORPORATION;REEL/FRAME:041715/0747

Effective date: 20170208

FPAY Fee payment

Year of fee payment: 4

AS Assignment

Owner name: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT, ILLINOIS

Free format text: SECURITY INTEREST;ASSIGNORS:MICROCHIP TECHNOLOGY INCORPORATED;SILICON STORAGE TECHNOLOGY, INC.;ATMEL CORPORATION;AND OTHERS;REEL/FRAME:046426/0001

Effective date: 20180529

Owner name: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT

Free format text: SECURITY INTEREST;ASSIGNORS:MICROCHIP TECHNOLOGY INCORPORATED;SILICON STORAGE TECHNOLOGY, INC.;ATMEL CORPORATION;AND OTHERS;REEL/FRAME:046426/0001

Effective date: 20180529

AS Assignment

Owner name: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT, CALIFORNIA

Free format text: SECURITY INTEREST;ASSIGNORS:MICROCHIP TECHNOLOGY INCORPORATED;SILICON STORAGE TECHNOLOGY, INC.;ATMEL CORPORATION;AND OTHERS;REEL/FRAME:047103/0206

Effective date: 20180914

Owner name: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES C

Free format text: SECURITY INTEREST;ASSIGNORS:MICROCHIP TECHNOLOGY INCORPORATED;SILICON STORAGE TECHNOLOGY, INC.;ATMEL CORPORATION;AND OTHERS;REEL/FRAME:047103/0206

Effective date: 20180914

AS Assignment

Owner name: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT, DELAWARE

Free format text: SECURITY INTEREST;ASSIGNORS:MICROCHIP TECHNOLOGY INC.;SILICON STORAGE TECHNOLOGY, INC.;ATMEL CORPORATION;AND OTHERS;REEL/FRAME:053311/0305

Effective date: 20200327

AS Assignment

Owner name: SILICON STORAGE TECHNOLOGY, INC., ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT;REEL/FRAME:053466/0011

Effective date: 20200529

Owner name: MICROSEMI CORPORATION, CALIFORNIA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT;REEL/FRAME:053466/0011

Effective date: 20200529

Owner name: MICROSEMI STORAGE SOLUTIONS, INC., ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT;REEL/FRAME:053466/0011

Effective date: 20200529

Owner name: MICROCHIP TECHNOLOGY INC., ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT;REEL/FRAME:053466/0011

Effective date: 20200529

Owner name: ATMEL CORPORATION, ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT;REEL/FRAME:053466/0011

Effective date: 20200529

AS Assignment

Owner name: WELLS FARGO BANK, NATIONAL ASSOCIATION, MINNESOTA

Free format text: SECURITY INTEREST;ASSIGNORS:MICROCHIP TECHNOLOGY INC.;SILICON STORAGE TECHNOLOGY, INC.;ATMEL CORPORATION;AND OTHERS;REEL/FRAME:053468/0705

Effective date: 20200529

AS Assignment

Owner name: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT, MINNESOTA

Free format text: SECURITY INTEREST;ASSIGNORS:MICROCHIP TECHNOLOGY INCORPORATED;SILICON STORAGE TECHNOLOGY, INC.;ATMEL CORPORATION;AND OTHERS;REEL/FRAME:055671/0612

Effective date: 20201217

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 8

AS Assignment

Owner name: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT, MINNESOTA

Free format text: SECURITY INTEREST;ASSIGNORS:MICROCHIP TECHNOLOGY INCORPORATED;SILICON STORAGE TECHNOLOGY, INC.;ATMEL CORPORATION;AND OTHERS;REEL/FRAME:057935/0474

Effective date: 20210528

AS Assignment

Owner name: MICROSEMI STORAGE SOLUTIONS, INC., ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:059333/0222

Effective date: 20220218

Owner name: MICROSEMI CORPORATION, ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:059333/0222

Effective date: 20220218

Owner name: ATMEL CORPORATION, ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:059333/0222

Effective date: 20220218

Owner name: SILICON STORAGE TECHNOLOGY, INC., ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:059333/0222

Effective date: 20220218

Owner name: MICROCHIP TECHNOLOGY INCORPORATED, ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:059333/0222

Effective date: 20220218

AS Assignment

Owner name: ATMEL CORPORATION, ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT;REEL/FRAME:059262/0105

Effective date: 20220218

AS Assignment

Owner name: MICROSEMI STORAGE SOLUTIONS, INC., ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059358/0001

Effective date: 20220228

Owner name: MICROSEMI CORPORATION, ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059358/0001

Effective date: 20220228

Owner name: ATMEL CORPORATION, ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059358/0001

Effective date: 20220228

Owner name: SILICON STORAGE TECHNOLOGY, INC., ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059358/0001

Effective date: 20220228

Owner name: MICROCHIP TECHNOLOGY INCORPORATED, ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059358/0001

Effective date: 20220228

AS Assignment

Owner name: MICROSEMI STORAGE SOLUTIONS, INC., ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059863/0400

Effective date: 20220228

Owner name: MICROSEMI CORPORATION, ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059863/0400

Effective date: 20220228

Owner name: ATMEL CORPORATION, ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059863/0400

Effective date: 20220228

Owner name: SILICON STORAGE TECHNOLOGY, INC., ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059863/0400

Effective date: 20220228

Owner name: MICROCHIP TECHNOLOGY INCORPORATED, ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059863/0400

Effective date: 20220228

AS Assignment

Owner name: MICROSEMI STORAGE SOLUTIONS, INC., ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059363/0001

Effective date: 20220228

Owner name: MICROSEMI CORPORATION, ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059363/0001

Effective date: 20220228

Owner name: ATMEL CORPORATION, ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059363/0001

Effective date: 20220228

Owner name: SILICON STORAGE TECHNOLOGY, INC., ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059363/0001

Effective date: 20220228

Owner name: MICROCHIP TECHNOLOGY INCORPORATED, ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:059363/0001

Effective date: 20220228

AS Assignment

Owner name: MICROSEMI STORAGE SOLUTIONS, INC., ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:060894/0437

Effective date: 20220228

Owner name: MICROSEMI CORPORATION, ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:060894/0437

Effective date: 20220228

Owner name: ATMEL CORPORATION, ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:060894/0437

Effective date: 20220228

Owner name: SILICON STORAGE TECHNOLOGY, INC., ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:060894/0437

Effective date: 20220228

Owner name: MICROCHIP TECHNOLOGY INCORPORATED, ARIZONA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT;REEL/FRAME:060894/0437

Effective date: 20220228