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Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
  • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
  • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
  • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
  • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
  • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
  • G01S17/04—Systems determining the presence of a target
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
  • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
  • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
  • G01S17/06—Systems determining position data of a target
  • G01S17/46—Indirect determination of position data
  • G01S17/48—Active triangulation systems, i.e. using the transmission and reflection of electromagnetic waves other than radio waves
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
  • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
  • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
  • G01S7/481—Constructional features, e.g. arrangements of optical elements
  • G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
  • G01S7/4813—Housing arrangements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/02—Details
  • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
  • H03K17/941—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated using an optical detector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/4805—Shape
  • H01L2224/4809—Loop shape
  • H01L2224/48091—Arched
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
  • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
  • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/30—Technical effects
  • H01L2924/301—Electrical effects
  • H01L2924/3025—Electromagnetic shielding
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
  • H03K17/945—Proximity switches
  • H03K2017/9455—Proximity switches constructional details

Definitions

• Optical proximity sensors such as the AVAGO TECHNOLOGIESTM HSDL-9100 surface-mount proximity sensor, the AVAGO TECHNOLOGIESTM APDS-9101 integrated reflective sensor, the AVAGO TECHNOLOGIESTM APDS-9120 integrated optical proximity sensor, and the AVAGO TECHNOLOGIESTM APDS-9800 integrated ambient light and proximity sensor, are known in the art.
• Such sensors typically comprise an integrated high efficiency infrared emitter or light source and a corresponding photodiode or light detector, and are employed in a large number of hand-held electronic devices such as mobile phones, Personal Data Assistants (“PDAs”), laptop and portable computers, portable and handheld devices, amusement and vending machines, industrial automation machinery and equipment, contactless switches, sanitary automation machinery and equipment, and the like.
• PDAs Personal Data Assistants
• FIG. 1 there is shown a prior art optical proximity sensor 10 comprising infrared light emitter 16 , light emitter driving circuit 51 , light detector or photodiode 12 , light detector sensing circuit 53 , metal housing or shield 18 with apertures 52 and 54 , and object to be sensed 60 .
• Light rays 15 emitted by emitter 16 and reflected as light rays 19 from object 60 are detected by photodiode 12 and thereby provide an indication that object 60 is close or near to sensor 10 .
• optical proximity sensor 10 further comprises metal housing or shield 18 formed of metal and comprising apertures 52 and 54 located over light emitter 16 and light detector 12 , respectively, such that at least a first portion of light 15 emitted by light detector 12 passes through aperture 55 , and at least a second portion of the first portion 19 of light reflected from object 50 in proximity to sensor 10 passes through aperture 57 for detection by light detector 12 .
• metal housing or shield 18 may further comprise first and second modules 61 and 63 within which light emitter 16 and light detector 12 are disposed, respectively.
• the first and second modules 61 and 63 comprise adjoining optically opaque metal inner sidewalls 25 to provide optical isolation between first and second modules 61 and 63 .
• optical proximity sensors generally include a metal shield, such as shield or housing 18 of the type shown in FIG. 1 , to provide optical isolation between light emitter 16 and light detector or photodiode 12 so that undesired optical cross-talk between emitter 16 and detector 12 is minimized.
• a metal shield such as shield or housing 18 of the type shown in FIG. 1
• FIG. 1 To provide optical isolation between light emitter 16 and light detector or photodiode 12 so that undesired optical cross-talk between emitter 16 and detector 12 is minimized.
• FIG. 2 shows a prior art optical proximity sensor 10 with metal shield or housing 18 .
• the optical proximity sensor shown in FIG. 2 is an AVAGO TECHNOLOGIESTM APDS-9120 Integrated Optical Proximity Sensor, which contains a molded plastic substrate 11 upon which are mounted LED 16 and light detector or photodiode 12 .
• Single-piece metal shield 18 covers LED 16 and light detector or photodiode 12 and contains a downwardly projecting light barrier 65 disposed therebetween (not shown in FIG. 2 ).
• Electrical contacts 17 provide a means to establish electrical connections between proximity sensor 10 and external devices.
• metal shield 18 is formed and thinned using conventional metal stamping techniques, and is affixed to the underlying plastic substrate 11 by gluing.
• the APDS-9120 sensor has an areal footprint of only 4 mm by 4 mm, and thus is quite small.
• FIG. 3 shows a prior art optical proximity sensor 10 with a more complicated metal shield or housing 18 than that of FIG. 2 .
• the optical proximity sensor shown in FIG. 3 is an AVAGO TECHNOLOGIESTM APDS-9800 Integrated Ambient Light and Proximity Sensor, which contains a printed circuit board (“PCB”) substrate 11 upon which are mounted LED 16 , light detector or photodiode 12 , and ambient light sensor 14 .
• the two-piece metal shield 18 covers LED 16 , light detector or photodiode 12 , and ambient light sensor 14 and contains a downwardly projecting light barrier 65 disposed therebetween.
• metal shield 18 being of a considerably more complicated shape and geometry than that of FIG. 2 , is formed and thinned using more advanced progressive metal stamping techniques, and must be hand-fitted and attached to the underlying PCB by gluing to ensure proper alignment and fit.
• metal shield 18 which is required to reduce the amount of crosstalk or interference that might otherwise occur between LED 16 and light detector 12 , as well as to help increase the detection distance of the device.
• Metal shields 18 are quite small, however, making them difficult to manufacture in high volumes, and thus expensive to fabricate. Such metal shields 18 also generally require expensive automated equipment to attach same to sensors 10 in a mass production setting. Moreover, the quality of metal shields 18 often varies, and issues commonly arise with suppliers being unable to meet the tight dimensional tolerances required for such small devices. Metal shields 18 can also detach from sensor 10 , thereby adding another failure point for sensor 10 .
• optical proximity sensors In addition, the commercial marketplace demands ever smaller portable electronic devices. This of course means there exists a motivation to make optical proximity sensors ever smaller. As optical proximity sensors become smaller, it becomes increasingly difficult to manufacture and attach the aforementioned metal shields to the sensors in a mass production setting. The metal shields themselves also add to the bulk and volume of the resulting sensor or package.
• optical proximity sensor design that eliminates the need to include a metal shield 18 , but which retains high crosstalk and interference rejection characteristics so that an optical proximity sensor can be provided that features improved performance, lower cost, increased manufacturability and improved reliability. What is also needed is a smaller optical proximity sensor.
• an optical proximity sensor comprising a printed circuit board (“PCB”) substrate comprising an aperture and a lower surface having electrical contacts disposed thereon, an infrared light emitter and an infrared light detector mounted on an upper surface of the substrate, an integrated circuit located at least partially within the aperture, a molding compound being disposed between portions of the integrated circuit and substrate, an ambient light detector mounted on an upper surface of the integrated circuit, first and second molded infrared light pass components disposed over and covering the infrared light emitter and the infrared light detector, respectively, and a molded infrared light cut component disposed between and over portions of the first and second infrared light pass components.
• PCB printed circuit board
• a method making an optical proximity sensor comprising providing a printed circuit board (“PCB”) substrate comprising an aperture and a lower surface having electrical contacts disposed thereon, mounting an infrared light emitter and an infrared light detector on an upper surface of the substrate, positioning an integrated circuit at least partially within the aperture, placing a molding compound between portions of the integrated circuit and substrate, mounting an ambient light detector on an upper surface of the integrated circuit, molding first and second infrared light pass components over and covering the infrared light emitter and the infrared light detector, respectively, and molding an infrared light cut component between and over portions of the first and second infrared light pass components.
• PCB printed circuit board
• FIG. 1 shows a prior art optical proximity sensor and associated circuitry
• FIG. 2 shows a prior art optical proximity sensor with a metal shield or housing
• FIG. 3 shows a prior art optical proximity sensor with a more complicated metal shield or housing than that shown in FIG. 2 ;
• FIG. 4 shows another prior art optical proximity sensor with a metal shield or housing
• FIG. 5 shows an optical proximity sensor comprising a light emitter mounted on a substrate and separated from a light detector by an optically transmissive material
• FIG. 6 shows an optical proximity sensor comprising a light emitter mounted on a substrate and separated from a light detector by an optically transmissive material, and a window disposed above the optical proximity sensor;
• FIG. 7 shows an optical proximity sensor comprising a light emitter mounted on a substrate and separated from a light detector by a metal light barrier;
• FIG. 8 shows a top perspective view of a substrate prior to having tape disposed over an aperture thereof
• FIG. 9 shows the substrate of FIG. 8 with the tape attached thereto
• FIG. 10 shows the substrate of FIG. 9 with an integrated circuit disposed in the aperture
• FIG. 11 shows a bottom perspective view of the substrate with a bottom portion of the integrated circuit encapsulated in a molding compound
• FIG. 12A shows a top perspective view of the substrate of FIG. 11 ;
• FIG. 13 shows the substrate with a light emitter and light detector mounted thereon
• FIG. 14 shows the optical proximity sensor and substrate with first and second infrared light pass components molded over the light emitter and light detector, respectively;
• FIG. 15 shows the optical proximity sensor and substrate with an ambient light detector mounted atop the integrated circuit
• FIG. 16 shows the optical proximity sensor and substrate with an infrared light cut component molded over the first and second infrared light pass components
• FIG. 17 shows the optical proximity sensor of FIG. 16 with solder balls attached to electrical contacts disposed on the bottom of the sensor
• FIG. 18 shows a bottom perspective view of the optical proximity sensor of FIG. 17 ;
• FIG. 19 shows a side view of the optical proximity sensor of FIG. 17 .
• FIG. 20 illustrates a method of making an optical proximity sensor according to one embodiment.
• a conventional optical proximity sensor known in the prior art which comprises substrate 11 and metal shield 18 .
• Integrated circuit 35 , ambient light detector 14 , infrared light detector 12 and infrared light emitter 16 are mounted on substrate 11 .
• Optically transmissive molding material 1 is molded over integrated circuit 35 , ambient light detector 14 , infrared light detector 12 and infrared light emitter 16 .
• Slot 72 separates first portion of substrate 11 from second portion of substrate 11 .
• Optical proximity sensor 10 shown in FIG. 4 suffers form many of the problems and drawbacks discussed above in connection with the prior art devices shown in FIGS. 1 through 3 .
• FIG. 5 shows an optical proximity sensor 10 comprising light emitter 16 mounted on substrate 11 and separated from light detector 12 by optically transmissive material 21 , which is a single mold two-part epoxy or transfer molding compound.
• optically transmissive material 21 is a single mold two-part epoxy or transfer molding compound.
• FIG. 4 while light rays 15 are transmitted through material 21 , other reflected, diffracted or refracted IR radiation 19 can leak across to light detector 12 through single mold compound 21 , which manifests itself as undesired crosstalk or interference between light emitter 16 and light detector 12 , thereby degrading the performance of proximity sensor 10 .
• the amount of reflected, diffracted or refracted IR radiation 19 and undesired crosstalk or interference between light emitter 16 and light detector 12 is typically exacerbated by the presence of window 23 , which in some applications is provided as part of the portable or other type of electronic device in which proximity sensor 10 is housed and mounted.
• the problems arising from undesired crosstalk or interference caused by reflected, diffracted or refracted IR radiation 19 may be reduced by disposing a metal light barrier 25 between light emitter 16 and light detector 12 .
• Providing such a metal barrier 25 in proximity sensor 10 presents problems respecting increased manufacturing costs and complexity.
• FIGS. 8 through 19 there is shown one embodiment of optical proximity sensor 10 and its various components during various stages of assembly.
• the complete optical proximity sensor of such an embodiment is shown in FIGS. 17 , 18 and 19 .
• the embodiment of optical proximity sensor 10 shown in FIGS. 17 , 18 and 19 overcomes many of the problems associated with prior art optical proximity sensors by completely eliminating the need for a metal shield, reducing the overall size, volume and footprint of optical proximity sensor 10 , and reducing manufacturing and material costs associated therewith.
• Many other advantages of the embodiment of the optical proximity sensor 10 illustrated in FIGS. 8 through 19 will become apparent to those skilled in the art upon having read, understood and considered the present specification and drawings.
• PCB printed circuit board
• Tape 63 having a lower sticky or adhesive surface is placed over upper surface 67 of substrate 11 and attached temporarily thereto as shown in FIG. 9 .
• substrate 11 is flipped over and integrated circuit 35 , which is preferably configured to fit conformably within aperture 65 , is placed within aperture 65 such that an upper thereof engages and is held in contact with the sticky or adhesive lower surface of tape 63 .
• integrated circuit 35 is held within aperture 35 while wires 73 are bonded to integrated circuit 35 and corresponding wire bond pads 74 disposed on lower surface 69 of substrate 11 .
• substrate 11 comprises conventional PCB materials and structure
• substrate 11 may also comprise any one or more of KAPTONTM, fiberglass, glass, ceramic, polyimide, polyimide film, a polymer, an organic material, a flex circuit material, epoxy, epoxy resin, a printed circuit board material, PTFE and glass, PTFE and ceramic, glass and ceramic, thermoset plastic, and plastic.
• substrate 11 is a printed circuit board having traces, wire bond pads and/or vias disposed thereon or therein.
• FIG. 11 shows proximity sensor 10 after bottom portions of integrated circuit 35 and corresponding wires 73 and wire bond pads 74 have been encapsulated, overmolded or covered with appropriate molding compound 75 such as DuPontTM KAPTONTM polyimide, epoxy, plastic, a polymer or any other suitable molding compound. Molding compound 75 covers and protects the underside of integrated circuit 35 and the various electrical connections located thereon, and additionally fixedly or rigidly attached integrated circuit 35 to the underside of substrate 11 .
• molding compound 75 such as DuPontTM KAPTONTM polyimide, epoxy, plastic, a polymer or any other suitable molding compound.
• FIGS. 12A and 12B show top perspective and top plan views of substrate 11 of optical proximity sensor 10 after tape 63 has been removed or delaminated from upper surface 67 .
• an upper surface of integrated circuit 35 is flush with upper surface 67 of substrate 11 .
• integrated circuit 35 is located within aperture 65 of substrate 11 and is not mounted atop substrate 11 in conventional fashion, substantial volume reduction is achieved in proximity sensor 10 with respect to prior art devices.
• upper surface 67 of substrate 11 has mounting pads or regions 77 and 79 formed thereon, which are configured to receive infrared light detector 12 and infrared light emitter 16 thereon, respectively.
• FIG. 13 shows substrate 11 and optical sensor 10 after infrared light detector 12 and infrared light emitter 16 have been die-attached or otherwise mounted on pads or regions 77 and 79 , respectively, which is most preferably accomplished using electrically conductive epoxy, more about which is said below.
• FIG. 14 shows substrate 11 and optical proximity sensor 10 after first and second infrared pass, optically transmissive, or optically clear components, compounds or materials 31 and 32 have been molded over infrared light emitter 16 and infrared light detector 12 , respectively.
• lenses 27 and 29 may also be formed over infrared light emitter 16 and infrared light detector 12 during the overmolding process, where lenses 27 and 29 are configured to increase the efficiency of collimating outwardly transmitted or received light, as the case may be.
• first and second infrared pass components 31 and 32 are most preferably formed using transfer molding techniques, other suitable molding techniques may also be employed such as compression molding methods. Following molding of components 31 and 32 , infrared light pass components 31 and 32 are cured.
• FIG. 15 shows optical proximity sensor 10 after ambient light detector 14 has been die-attached to the upper surface of integrated circuit, and after wires 78 have been wire bonded to ambient light detector 14 and wire bond pads 76 on substrate 11 .
• Die attachment of ambient light detector 14 is most preferably accomplished using electrically conductive epoxy, more about which is said below.
• optical proximity sensor 10 after infrared cut optically non-transmissive component, compound or material 33 has been molded between first and second infrared pass components 31 and 32 and between infrared light emitter 16 and infrared light detector 12 , as well as over portions first and second infrared pass components 31 and 32 such that apertures 52 and 54 are formed in component 33 .
• infrared light cut component, compound or material 33 is cured.
• Infrared light cut component 33 is configured to permit a first portion of light emitted by light emitter 16 to pass through infrared light pass component 31 and first aperture 52 such that at least a second portion of the first portion of light reflected from an object of interest in proximity to sensor 10 passes through second aperture 54 and infrared light pass component 31 for detection by infrared light detector 12 .
• Infrared light cut component 33 is further configured to be disposed between infrared light emitter 16 and infrared light detector 12 in each of devices 10 so as to substantially attenuate or block the transmission of undesired direct, scattered or reflected light between infrared light emitter 16 and infrared light detector 12 and thereby minimize optical crosstalk and interference between infrared light emitter 16 and infrared light detector 12 .
• FIGS. 17 , 18 and 19 show top perspective, bottom perspective and side view, respectively, of optical proximity sensor 10 after ball grid array 83 has been attached to the underside of sensor 10 on electrical contacts 71 (see, for example, FIGS. 10 and 11 ).
• Optical proximity sensor 10 is now ready for mounting to another device, and for establishing electrical interconnection therewith, through ball grid array 83 in a manner well known in the art.
• light emitter 16 is a semiconductor infrared LED such as a Model No. TK116IRA TYNTEKTM AlGaAs/GaAs Infrared Chip, the data sheet for which is included in an Information Disclosure Statement filed on even date herewith and the entirety of which is hereby incorporated by reference herein.
• Light detector 12 may be, by way of example, a TYNTEKTM Si Photo-diode Chip No, TK 043PD, the data sheet for which is hereby incorporated by reference herein in its entirety.
• Ambient light detector 14 may be, by way of example, an AVAGO TECHNOLOGIESTM APDS-9005 Miniature Surface-Mount Ambient Light Photo Sensor, the data sheet for which is hereby incorporated by reference herein in its entirety.
• Integrated circuit 35 may be, by way of example, an AVAGO TECHNOLOGIESTM APDS-9700 signal conditioning IC for optical proximity sensors, the data sheet for which is hereby incorporated by reference herein in its entirety.
• Infrared light cut component 33 does not extend over apertures 52 , 54 which are configured to permit the passage of direct, reflected and ambient light therethrough, respectively. Infrared light cut component 33 does extend and is molded between a first portion and a second portion of substrate 11 so as to attenuate or absorb undesired scattered, reflected or direct light rays that might otherwise propagate between light emitter 16 and light detectors 12 and 14 . That is, infrared light cut component 33 is configured and molded to substantially attenuate or block the transmission of undesired direct, scattered or reflected light between light emitter 16 and light detector 12 , and thereby minimize optical crosstalk and interference between light emitter 16 and light detector 12 .
• Infrared light emitter 16 is operably connected to integrated circuit 35 and is driven by a light emitter driving circuit contained therein.
• light detector 12 is operably connected to integrated circuit 35 , which comprises a light detector circuit incorporated therein.
• Ambient light detector or sensor 14 is also operably connected to integrated circuit 35 , which contains an ambient light sensing circuit incorporated therein.
• Light rays reflected from the surface of molded component 31 are blocked from reaching light detector 12 by molded substantially optically non-transmissive infrared light cut component 33 .
• Light rays reflected from a window interposed between optical sensor 10 and object to be detected 60 are also blocked by molded substantially optically non-transmissive infrared light cut component 33 .
• Total Internal Reflection between components 31 and 33 helps improve the performance of proximity sensor 10 .
• the embodiment of sensor 10 shown in FIGS. 8 through 19 eliminates the need to provide a metal shield, while improving the optical performance of sensor 10 by reducing crosstalk and interference, as undesired reflected, refracted or diffracted light rays cannot penetrate and travel through to light detectors 12 or 14 .
• molded optically transmissive infrared light pass component, compound or material is formed using an infrared-pass and optically transmissive transfer molding compound such as NITTO DENKOTM NT-8506 clear transfer molding compound 8506 or PENCHEM TechnologiesTM OP 579 infrared pass optoelectronic epoxy.
• an infrared-pass and optically transmissive transfer molding compound such as NITTO DENKOTM NT-8506 clear transfer molding compound 8506 or PENCHEM TechnologiesTM OP 579 infrared pass optoelectronic epoxy.
• Other suitable optically transmissive epoxies, plastics, polymers or other materials may also be employed.
• molded substantially optically non-transmissive infrared light cut component 33 is formed using an infrared-blocking, filtering or cutting transfer molding compound such as NITTO DENKOTM NT-MB-IRL3801 two-part epoxy resin material or PENCHEM TechnologiesTM OP 580 infrared filter optoelectronic epoxy, either of which preferably contains an amount of an infrared cutting material that has been selected by the user to achieve acceptable infrared light blocking performance while minimizing the amount of such infrared cutting material employed to keep costs to a minimum.
• an infrared-blocking, filtering or cutting transfer molding compound such as NITTO DENKOTM NT-MB-IRL3801 two-part epoxy resin material or PENCHEM TechnologiesTM OP 580 infrared filter optoelectronic epoxy, either of which preferably contains an amount of an infrared cutting material that has been selected by the user to achieve acceptable infrared light blocking performance while minimizing the amount of such infrared cutting material employed to
• step 101 the assembly process begins at step 101 and by laminating tape 63 on upper surface 67 of substrate 11 .
• integrated circuit 35 (which in a preferred embodiment is an AVAGO TECHNOLOGIESTM 9700 ASIC) is die-attached to the adhesive underside of tape 63 at step 103 after being mounted in aperture 65 .
• Wire bonding is then conducted at step 105 at a bonding temperature of 150 C.
• 100% visual inspection is conducted at step 107 to verify the integrity and robustness of the connections established by wire bonding.
• plasma cleaning step 109 is conducted.
• First transfer molding process 111 is carried out using a black IR cut component, compound or material such as NT8570 at a molding temperature ranging between about 150 C and about 160 C.
• post-mold curing is carried out at 150 C for about 3 hours.
• laminating tape 63 is removed form substrate 11 .
• infrared light emitter 16 e.g., an LED TK116IR IC
• an electrically conductive epoxy such as FDP5053 or FDP5100
• infrared light detector 12 e.g., a PD-TK043PD IC
• an electrically conductive epoxy such as FDP5053 or FDP5100
• FDP5053 or FDP5100 an electrically conductive epoxy
• step 125 plasma cleaning is conducted to clean the surface of substrate 11 , and especially the wire bonding surfaces thereof.
• Wire bonding is then conducted at step 127 at a bonding temperature of 150 C.
• 100% visual inspection is conducted at step 129 to verify the integrity and robustness of the connections established by wire bonding.
• a plasma cleaning step 131 is conducted.
• integrated circuit 35 is partially encapsulated by a clear transparent compound such as PT1002AB clear casting component, compound or material, followed by curing at step 135 .
• ambient light detector 14 (which in a preferred embodiment is an AVAGO TECHNOLOGIESTM APDS-9005 Miniature Surface-Mount Ambient Light Photo Sensor) is die-attached to integrated circuit 35 using an electrically non-conductive epoxy such as ABLESTKTM 2025.
• plasma cleaning is conducted to clean the surface of substrates 11 , and especially the wire bonding surfaces thereof. Wire bonding is then conducted at step 141 at a bonding temperature of about 150 C. After wire bonding, 100% visual inspection is conducted at step 143 to verify the integrity and robustness of the connections established by wire bonding. After visual inspection at step 143 , a plasma cleaning step 145 is conducted.
• a second encapsulation process 147 is conducted using a clear IR cut casting component, compound or material such as NT-MB-IRL 3801 at a molding temperature ranging between about 150 C and about 160 C, followed by post-molding curing at step 149 at about 135 C for about 1 hour.
• solder balls for ball grid array 83 are attached to electrical contacts 71 on the underside of optical proximity sensor 10 .
• Solder reflow is then carried out at step 153 , followed by singulation of individual packages or sensors 10 .
• Baking is carried out at step 157 at about 150 C for about 30 minutes. Sensors 10 which have passed inspection and testing are packed onto a tape and reel at step 159 for baking and shipping at step 161 .
• thermosetting materials are softened by heat and pressure in a transfer chamber, and then forced at high pressure through suitable sprues, runners, and gates into a closed mold for final curing.
• proximity sensor may be incorporated into portable electronic devices such as mobile telephones, smart phones, personal data assistants (PDAs), laptop computers, notebook computer, computers and other devices.
• portable electronic devices such as mobile telephones, smart phones, personal data assistants (PDAs), laptop computers, notebook computer, computers and other devices.
• proximity sensor may be incorporated into portable electronic devices such as mobile telephones, smart phones, personal data assistants (PDAs), laptop computers, notebook computer, computers and other devices.
• portable electronic devices such as mobile telephones, smart phones, personal data assistants (PDAs), laptop computers, notebook computer, computers and other devices.

Abstract

Description

Claims (26)

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Applications Claiming Priority (1)

Publications (2)

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