US8975143B2 - Selective gate oxide properties adjustment using fluorine - Google Patents
Selective gate oxide properties adjustment using fluorine Download PDFInfo
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- US8975143B2 US8975143B2 US13/872,643 US201313872643A US8975143B2 US 8975143 B2 US8975143 B2 US 8975143B2 US 201313872643 A US201313872643 A US 201313872643A US 8975143 B2 US8975143 B2 US 8975143B2
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- gate
- fluorine
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- 229910052731 fluorine Inorganic materials 0.000 title claims abstract description 69
- 239000011737 fluorine Substances 0.000 title claims abstract description 69
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 title claims 11
- 230000015654 memory Effects 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims description 66
- 239000000463 material Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 26
- 238000003860 storage Methods 0.000 claims description 20
- 239000007943 implant Substances 0.000 claims description 19
- 238000002955 isolation Methods 0.000 claims description 13
- 238000000059 patterning Methods 0.000 claims description 11
- 230000001590 oxidative effect Effects 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract description 58
- 230000003647 oxidation Effects 0.000 abstract description 10
- 238000007254 oxidation reaction Methods 0.000 abstract description 10
- 239000002019 doping agent Substances 0.000 description 30
- 238000002513 implantation Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000005684 electric field Effects 0.000 description 7
- 230000003247 decreasing effect Effects 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- GDMRBHLKSYSMLJ-UHFFFAOYSA-N [F].O=[Si] Chemical compound [F].O=[Si] GDMRBHLKSYSMLJ-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
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Abstract
Description
Claims (6)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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US13/872,643 US8975143B2 (en) | 2013-04-29 | 2013-04-29 | Selective gate oxide properties adjustment using fluorine |
US14/618,761 US9299856B2 (en) | 2013-04-29 | 2015-02-10 | Selective gate oxide properties adjustment using fluorine |
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US13/872,643 US8975143B2 (en) | 2013-04-29 | 2013-04-29 | Selective gate oxide properties adjustment using fluorine |
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US14/618,761 Division US9299856B2 (en) | 2013-04-29 | 2015-02-10 | Selective gate oxide properties adjustment using fluorine |
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US20140319596A1 US20140319596A1 (en) | 2014-10-30 |
US8975143B2 true US8975143B2 (en) | 2015-03-10 |
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US14/618,761 Active US9299856B2 (en) | 2013-04-29 | 2015-02-10 | Selective gate oxide properties adjustment using fluorine |
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JP2014241386A (en) * | 2013-06-12 | 2014-12-25 | 富士通セミコンダクター株式会社 | Method for manufacturing semiconductor device and semiconductor device |
US9171858B2 (en) * | 2013-12-30 | 2015-10-27 | Globalfoundries Singapore Pte. Ltd. | Multi-level memory cells and methods for forming multi-level memory cells |
US9202815B1 (en) * | 2014-06-20 | 2015-12-01 | Infineon Technologies Ag | Method for processing a carrier, a carrier, and a split gate field effect transistor structure |
US9425044B2 (en) * | 2014-08-18 | 2016-08-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Composite spacer for silicon nanocrystal memory storage |
US10586705B2 (en) * | 2017-11-28 | 2020-03-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fluorine doped non-volatile memory cells and methods for forming the same |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030017689A1 (en) * | 1997-12-18 | 2003-01-23 | Salman Akram | Methods of forming a transistor gate |
US6541321B1 (en) | 2002-05-14 | 2003-04-01 | Advanced Micro Devices, Inc. | Method of making transistors with gate insulation layers of differing thickness |
US7012005B2 (en) | 2002-06-25 | 2006-03-14 | Siliconix Incorporated | Self-aligned differential oxidation in trenches by ion implantation |
US7163871B2 (en) | 2003-01-27 | 2007-01-16 | Elpida Memory, Inc. | Manufacturing method of semiconductor device and oxidization method of semiconductor substrate |
US20070063251A1 (en) * | 2005-09-22 | 2007-03-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor product including logic, non-volatile memory and volatile memory devices and method for fabrication thereof |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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TW405155B (en) * | 1997-07-15 | 2000-09-11 | Toshiba Corp | Semiconductor device and its manufacture |
US8647946B2 (en) * | 2009-11-19 | 2014-02-11 | Globalfoundries Singapore Pte. Ltd. | Control gate |
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2013
- 2013-04-29 US US13/872,643 patent/US8975143B2/en active Active
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2015
- 2015-02-10 US US14/618,761 patent/US9299856B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030017689A1 (en) * | 1997-12-18 | 2003-01-23 | Salman Akram | Methods of forming a transistor gate |
US6541321B1 (en) | 2002-05-14 | 2003-04-01 | Advanced Micro Devices, Inc. | Method of making transistors with gate insulation layers of differing thickness |
US7012005B2 (en) | 2002-06-25 | 2006-03-14 | Siliconix Incorporated | Self-aligned differential oxidation in trenches by ion implantation |
US7163871B2 (en) | 2003-01-27 | 2007-01-16 | Elpida Memory, Inc. | Manufacturing method of semiconductor device and oxidization method of semiconductor substrate |
US20070063251A1 (en) * | 2005-09-22 | 2007-03-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor product including logic, non-volatile memory and volatile memory devices and method for fabrication thereof |
Non-Patent Citations (1)
Title |
---|
Woerlee, P. et al., "Multiple Gate Oxide Technology Using Fluorine Implantation", IEEE, Proceeding of the 31st European Solid-State Device Research Conference, 2001, Sep. 11-13, 2001, pp. 107-110. |
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US9299856B2 (en) | 2016-03-29 |
US20140319596A1 (en) | 2014-10-30 |
US20150179821A1 (en) | 2015-06-25 |
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