US9269410B2 - Leakage measurement systems - Google Patents
Leakage measurement systems Download PDFInfo
- Publication number
- US9269410B2 US9269410B2 US14/584,584 US201414584584A US9269410B2 US 9269410 B2 US9269410 B2 US 9269410B2 US 201414584584 A US201414584584 A US 201414584584A US 9269410 B2 US9269410 B2 US 9269410B2
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- US
- United States
- Prior art keywords
- word line
- voltage
- current
- leakage
- word lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C29/50008—Marginal testing, e.g. race, voltage or current testing of impedance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/025—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in signal lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C2029/1202—Word line control
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5006—Current
Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/584,584 US9269410B2 (en) | 2011-02-28 | 2014-12-29 | Leakage measurement systems |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/036,409 US8588007B2 (en) | 2011-02-28 | 2011-02-28 | Leakage measurement systems |
US14/084,408 US8947946B2 (en) | 2011-02-28 | 2013-11-19 | Leakage measurement systems |
US14/584,584 US9269410B2 (en) | 2011-02-28 | 2014-12-29 | Leakage measurement systems |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/084,408 Continuation US8947946B2 (en) | 2011-02-28 | 2013-11-19 | Leakage measurement systems |
Publications (2)
Publication Number | Publication Date |
---|---|
US20150109867A1 US20150109867A1 (en) | 2015-04-23 |
US9269410B2 true US9269410B2 (en) | 2016-02-23 |
Family
ID=46718912
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/036,409 Active 2032-05-20 US8588007B2 (en) | 2011-02-28 | 2011-02-28 | Leakage measurement systems |
US14/084,408 Active US8947946B2 (en) | 2011-02-28 | 2013-11-19 | Leakage measurement systems |
US14/584,584 Active US9269410B2 (en) | 2011-02-28 | 2014-12-29 | Leakage measurement systems |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/036,409 Active 2032-05-20 US8588007B2 (en) | 2011-02-28 | 2011-02-28 | Leakage measurement systems |
US14/084,408 Active US8947946B2 (en) | 2011-02-28 | 2013-11-19 | Leakage measurement systems |
Country Status (1)
Country | Link |
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US (3) | US8588007B2 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9159452B2 (en) | 2008-11-14 | 2015-10-13 | Micron Technology, Inc. | Automatic word line leakage measurement circuitry |
US8588007B2 (en) | 2011-02-28 | 2013-11-19 | Micron Technology, Inc. | Leakage measurement systems |
US20120265475A1 (en) * | 2011-04-15 | 2012-10-18 | Electric Transportation Engineering Corporation, D/B/A Ecotality North America | Device for Testing a Charge System and Method of Providing and Using the Same |
US8634264B2 (en) | 2011-10-26 | 2014-01-21 | Micron Technology, Inc. | Apparatuses, integrated circuits, and methods for measuring leakage current |
WO2014175896A1 (en) * | 2013-04-26 | 2014-10-30 | Freescale Semiconductor, Inc. | Voltage initialization of a memory |
US9123430B2 (en) * | 2013-06-14 | 2015-09-01 | Sandisk 3D Llc | Differential current sense amplifier and method for non-volatile memory |
US9281078B2 (en) * | 2014-06-12 | 2016-03-08 | Micron Technology, Inc. | Program operations with embedded leak checks |
KR102252692B1 (en) | 2014-07-15 | 2021-05-17 | 삼성전자주식회사 | Leakage current detection device and nonvolatile memory device including the same |
US9443610B1 (en) | 2015-06-04 | 2016-09-13 | Micron Technology, Inc. | Leakage current detection |
JP6725362B2 (en) * | 2016-08-19 | 2020-07-15 | キオクシア株式会社 | Semiconductor memory device and memory system |
JP2022185367A (en) | 2021-06-02 | 2022-12-14 | キオクシア株式会社 | semiconductor storage device |
US11862255B2 (en) | 2021-07-19 | 2024-01-02 | Micron Technology, Inc. | Charge loss detection using a multiple sampling scheme |
US11774517B2 (en) * | 2021-11-03 | 2023-10-03 | Nxp B. V. | Leakage and loading detector circuit |
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2011
- 2011-02-28 US US13/036,409 patent/US8588007B2/en active Active
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2013
- 2013-11-19 US US14/084,408 patent/US8947946B2/en active Active
-
2014
- 2014-12-29 US US14/584,584 patent/US9269410B2/en active Active
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US20120218833A1 (en) | 2011-02-28 | 2012-08-30 | Micron Technology, Inc. | Leakage measurement systems |
US8588007B2 (en) | 2011-02-28 | 2013-11-19 | Micron Technology, Inc. | Leakage measurement systems |
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US20130107640A1 (en) | 2011-10-26 | 2013-05-02 | Micron Technology, Inc. | Apparatuses, integrated circuits, and methods for measuring leakage current |
US8634264B2 (en) | 2011-10-26 | 2014-01-21 | Micron Technology, Inc. | Apparatuses, integrated circuits, and methods for measuring leakage current |
US20140133249A1 (en) | 2011-10-26 | 2014-05-15 | Micron Technology, Inc. | Apparatuses, integrated circuits, and methods for measuring leakage current |
US20150029802A1 (en) | 2011-10-26 | 2015-01-29 | Micron Technology, Inc. | Apparatuses, integrated circuits, and methods for measuring leakage current |
US20140185401A1 (en) * | 2012-12-31 | 2014-07-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sensing circuit, memory device and data detecting method |
Also Published As
Publication number | Publication date |
---|---|
US20150109867A1 (en) | 2015-04-23 |
US8588007B2 (en) | 2013-11-19 |
US20120218833A1 (en) | 2012-08-30 |
US20140071772A1 (en) | 2014-03-13 |
US8947946B2 (en) | 2015-02-03 |
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