US9690201B2 - Drawing method and method of manufacturing article - Google Patents
Drawing method and method of manufacturing article Download PDFInfo
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- US9690201B2 US9690201B2 US13/749,853 US201313749853A US9690201B2 US 9690201 B2 US9690201 B2 US 9690201B2 US 201313749853 A US201313749853 A US 201313749853A US 9690201 B2 US9690201 B2 US 9690201B2
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- patterns
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- 238000000034 method Methods 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000002245 particle Substances 0.000 claims abstract description 16
- 238000002955 isolation Methods 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 description 35
- 230000003287 optical effect Effects 0.000 description 9
- 238000003491 array Methods 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910025794 LaB6 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- High Energy & Nuclear Physics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
Abstract
Ai=m 1 X (m 1=1, 2, 3, . . . )
where X is a dimension defined by the pitch P.
Description
Ai=m 1 X (m 1=1, 2, 3, . . . )
where X is a dimension defined by the pitch P.
N 2 =K×L+1 (K and L are natural numbers)
BY=GY×K
DP=N 2 ×GY
X-direction; Ai=m 1 P (m 1=1, 2, 3, . . . ) (1)
Y-direction; Bi=m2 (Q/2) (m 2=1, 2, 3, . . . ) (2)
X-direction; Ai=m 1 X (m 1=1, 2, 3, . . . ) (3)
Y-direction; Bi=m 2 Y (m 2=1, 2, 3, . . . ) (4)
where X is a dimension defined by the pitch P between gate regions, and is represented by, for example, P/n1 (n1 is a natural number). When X is P/n1 (n1=1), equation (3) is equal to equation (1). Also, Y is a dimension defined by the pitch Q between isolation regions (and active regions), and is represented by, for example, (Q/2)/n2 (n2 is a natural number). When Y is (Q/2)/n2 (n2=1),
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012018634A JP6087506B2 (en) | 2012-01-31 | 2012-01-31 | Drawing method and article manufacturing method |
JP2012-018634 | 2012-01-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
US20130196517A1 US20130196517A1 (en) | 2013-08-01 |
US9690201B2 true US9690201B2 (en) | 2017-06-27 |
Family
ID=48836788
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/749,853 Expired - Fee Related US9690201B2 (en) | 2012-01-31 | 2013-01-25 | Drawing method and method of manufacturing article |
Country Status (5)
Country | Link |
---|---|
US (1) | US9690201B2 (en) |
JP (1) | JP6087506B2 (en) |
KR (1) | KR101597869B1 (en) |
CN (1) | CN103226292B (en) |
TW (1) | TWI483290B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11246951B2 (en) | 2005-01-31 | 2022-02-15 | S. Edward Neister | Method and apparatus for sterilizing and disinfecting air and surfaces and protecting a zone from external microbial contamination |
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US9053279B2 (en) * | 2013-03-14 | 2015-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pattern modification with a preferred position function |
JP6215061B2 (en) * | 2014-01-14 | 2017-10-18 | 株式会社アドバンテスト | Electron beam exposure system |
JP6211435B2 (en) * | 2014-02-26 | 2017-10-11 | 株式会社アドバンテスト | Manufacturing method of semiconductor device |
US9318564B2 (en) | 2014-05-19 | 2016-04-19 | Qualcomm Incorporated | High density static random access memory array having advanced metal patterning |
US10386722B2 (en) | 2014-06-13 | 2019-08-20 | Intel Corporation | Ebeam staggered beam aperture array |
US9897908B2 (en) * | 2014-06-13 | 2018-02-20 | Intel Corporation | Ebeam three beam aperture array |
US10216087B2 (en) | 2014-06-13 | 2019-02-26 | Intel Corporation | Ebeam universal cutter |
CN106463354B (en) * | 2014-06-25 | 2019-12-20 | 英特尔公司 | Techniques for forming compact arrays of functional units |
WO2016028334A1 (en) | 2014-08-19 | 2016-02-25 | Intel Corporation | Cross scan proximity correction with ebeam universal cutter |
JP2016122676A (en) | 2014-12-24 | 2016-07-07 | 株式会社アドバンテスト | Exposure device and exposure method |
JP2016207926A (en) | 2015-04-27 | 2016-12-08 | 株式会社アドバンテスト | Exposure apparatus and exposure method |
JP2016207925A (en) | 2015-04-27 | 2016-12-08 | 株式会社アドバンテスト | Element, manufacturing method and exposure device |
JP2017063101A (en) | 2015-09-24 | 2017-03-30 | 株式会社アドバンテスト | Exposure apparatus and exposure method |
US9818623B2 (en) | 2016-03-22 | 2017-11-14 | Globalfoundries Inc. | Method of forming a pattern for interconnection lines and associated continuity blocks in an integrated circuit |
JP2018041790A (en) | 2016-09-06 | 2018-03-15 | 株式会社アドバンテスト | Exposure apparatus and exposure data structure |
US9818640B1 (en) | 2016-09-21 | 2017-11-14 | Globalfoundries Inc. | Apparatus and method of forming self-aligned cuts in a non-mandrel line of an array of metal lines |
US9786545B1 (en) | 2016-09-21 | 2017-10-10 | Globalfoundries Inc. | Method of forming ANA regions in an integrated circuit |
US9818641B1 (en) | 2016-09-21 | 2017-11-14 | Globalfoundries Inc. | Apparatus and method of forming self-aligned cuts in mandrel and a non-mandrel lines of an array of metal lines |
US9852986B1 (en) | 2016-11-28 | 2017-12-26 | Globalfoundries Inc. | Method of patterning pillars to form variable continuity cuts in interconnection lines of an integrated circuit |
US10043703B2 (en) | 2016-12-15 | 2018-08-07 | Globalfoundries Inc. | Apparatus and method for forming interconnection lines having variable pitch and variable widths |
US9812351B1 (en) | 2016-12-15 | 2017-11-07 | Globalfoundries Inc. | Interconnection cells having variable width metal lines and fully-self aligned continuity cuts |
US9887127B1 (en) | 2016-12-15 | 2018-02-06 | Globalfoundries Inc. | Interconnection lines having variable widths and partially self-aligned continuity cuts |
US10002786B1 (en) | 2016-12-15 | 2018-06-19 | Globalfoundries Inc. | Interconnection cells having variable width metal lines and fully-self aligned variable length continuity cuts |
JP7474151B2 (en) * | 2020-08-21 | 2024-04-24 | 株式会社ニューフレアテクノロジー | Multi-electron beam lithography apparatus and multi-electron beam lithography method |
JP7455720B2 (en) * | 2020-09-29 | 2024-03-26 | 株式会社ニューフレアテクノロジー | Multi-charged particle beam irradiation device and multi-charged particle beam irradiation method |
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2012
- 2012-01-31 JP JP2012018634A patent/JP6087506B2/en not_active Expired - Fee Related
- 2012-12-27 TW TW101150553A patent/TWI483290B/en not_active IP Right Cessation
-
2013
- 2013-01-23 KR KR1020130007497A patent/KR101597869B1/en active IP Right Grant
- 2013-01-25 US US13/749,853 patent/US9690201B2/en not_active Expired - Fee Related
- 2013-01-28 CN CN201310031183.9A patent/CN103226292B/en not_active Expired - Fee Related
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---|---|---|---|---|
US11246951B2 (en) | 2005-01-31 | 2022-02-15 | S. Edward Neister | Method and apparatus for sterilizing and disinfecting air and surfaces and protecting a zone from external microbial contamination |
Also Published As
Publication number | Publication date |
---|---|
KR20130088772A (en) | 2013-08-08 |
JP2013157547A (en) | 2013-08-15 |
KR101597869B1 (en) | 2016-02-25 |
CN103226292A (en) | 2013-07-31 |
JP6087506B2 (en) | 2017-03-01 |
TWI483290B (en) | 2015-05-01 |
CN103226292B (en) | 2015-04-22 |
US20130196517A1 (en) | 2013-08-01 |
TW201331986A (en) | 2013-08-01 |
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