USD587222S1 - Attracting plate of an electrostatic chuck for semiconductor manufacturing - Google Patents

Attracting plate of an electrostatic chuck for semiconductor manufacturing Download PDF

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Publication number
USD587222S1
USD587222S1 US29/276,663 US27666307F USD587222S US D587222 S1 USD587222 S1 US D587222S1 US 27666307 F US27666307 F US 27666307F US D587222 S USD587222 S US D587222S
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United States
Prior art keywords
semiconductor manufacturing
electrostatic chuck
attracting plate
attracting
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US29/276,663
Inventor
Yasuharu Sasaki
Mamoru Kosakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Sumitomo Osaka Cement Co Ltd
Original Assignee
Tokyo Electron Ltd
Sumitomo Osaka Cement Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Sumitomo Osaka Cement Co Ltd filed Critical Tokyo Electron Ltd
Assigned to TOKYO ELECTRON LIMITED, SUMITOMO OSAKA CEMENT CO., LTD. reassignment TOKYO ELECTRON LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KOSAKAI, MAMORU, SASAKI, YASUHARU
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Publication of USD587222S1 publication Critical patent/USD587222S1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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FIG. 1 is a front elevational view of an attracting plate of an electrostatic chuck for semiconductor manufacturing, showing our new design;
FIG. 2 is a rear elevational view thereof;
FIG. 3 is a top plan view thereof;
FIG. 4 is an enlarged view thereof taken along sections A—A and B—B in FIG. 1;
FIG. 5 is a right side elevational view thereof;
FIG. 6 is a left side elevational view thereof;
FIG. 7 is a cross-sectional view taken along line 77 in FIG. 4 with portions of the internal mechanism omitted; and,
FIG. 8 is a front perspective view thereof.
The broken line showing in the figures is for illustrative purposes only and forms no part of the claimed design.

Claims (1)

  1. The ornamental design for an attracting plate of an electrostatic chuck for semiconductor manufacturing, as shown and described.
US29/276,663 2006-08-01 2007-02-01 Attracting plate of an electrostatic chuck for semiconductor manufacturing Expired - Lifetime USD587222S1 (en)

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JP2006020297 2006-08-01

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USD587222S1 true USD587222S1 (en) 2009-02-24

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Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100032310A1 (en) * 2006-08-16 2010-02-11 Novellus Systems, Inc. Method and apparatus for electroplating
US20100044236A1 (en) * 2000-03-27 2010-02-25 Novellus Systems, Inc. Method and apparatus for electroplating
US20120087774A1 (en) * 2006-01-27 2012-04-12 Camtek Ltd Diced Wafer Adaptor and a Method for Transferring a Diced Wafer
US8540857B1 (en) 2008-12-19 2013-09-24 Novellus Systems, Inc. Plating method and apparatus with multiple internally irrigated chambers
US8623193B1 (en) 2004-06-16 2014-01-07 Novellus Systems, Inc. Method of electroplating using a high resistance ionic current source
US8795480B2 (en) 2010-07-02 2014-08-05 Novellus Systems, Inc. Control of electrolyte hydrodynamics for efficient mass transfer during electroplating
US9449808B2 (en) 2013-05-29 2016-09-20 Novellus Systems, Inc. Apparatus for advanced packaging applications
US9512538B2 (en) 2008-12-10 2016-12-06 Novellus Systems, Inc. Plating cup with contoured cup bottom
US9523155B2 (en) 2012-12-12 2016-12-20 Novellus Systems, Inc. Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
US9624592B2 (en) 2010-07-02 2017-04-18 Novellus Systems, Inc. Cross flow manifold for electroplating apparatus
US9670588B2 (en) 2013-05-01 2017-06-06 Lam Research Corporation Anisotropic high resistance ionic current source (AHRICS)
USD795208S1 (en) * 2015-08-18 2017-08-22 Tokyo Electron Limited Electrostatic chuck for semiconductor manufacturing equipment
US9816194B2 (en) 2015-03-19 2017-11-14 Lam Research Corporation Control of electrolyte flow dynamics for uniform electroplating
USD802472S1 (en) * 2015-08-06 2017-11-14 Tokyo Electron Limited Electrostatic chuck for semiconductor manufacturing equipment
USD803802S1 (en) * 2015-08-18 2017-11-28 Tokyo Electron Limited Electrostatic chuck for semiconductor manufacturing equipment
US10014170B2 (en) 2015-05-14 2018-07-03 Lam Research Corporation Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity
US10094034B2 (en) 2015-08-28 2018-10-09 Lam Research Corporation Edge flow element for electroplating apparatus
US20180366360A1 (en) * 2017-06-16 2018-12-20 Tokyo Electron Limited Electrostatic attraction method
US10233556B2 (en) 2010-07-02 2019-03-19 Lam Research Corporation Dynamic modulation of cross flow manifold during electroplating
US10364505B2 (en) 2016-05-24 2019-07-30 Lam Research Corporation Dynamic modulation of cross flow manifold during elecroplating
US10781527B2 (en) 2017-09-18 2020-09-22 Lam Research Corporation Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating
US11001934B2 (en) 2017-08-21 2021-05-11 Lam Research Corporation Methods and apparatus for flow isolation and focusing during electroplating
USD947802S1 (en) 2020-05-20 2022-04-05 Applied Materials, Inc. Replaceable substrate carrier interfacing film
USD984972S1 (en) * 2021-03-29 2023-05-02 Beijing Naura Microelectronics Equipment Co., Ltd. Electrostatic chuck for semiconductor manufacture
USD990441S1 (en) * 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Cited By (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100044236A1 (en) * 2000-03-27 2010-02-25 Novellus Systems, Inc. Method and apparatus for electroplating
US8475644B2 (en) 2000-03-27 2013-07-02 Novellus Systems, Inc. Method and apparatus for electroplating
US8623193B1 (en) 2004-06-16 2014-01-07 Novellus Systems, Inc. Method of electroplating using a high resistance ionic current source
US20120087774A1 (en) * 2006-01-27 2012-04-12 Camtek Ltd Diced Wafer Adaptor and a Method for Transferring a Diced Wafer
US20100032310A1 (en) * 2006-08-16 2010-02-11 Novellus Systems, Inc. Method and apparatus for electroplating
US8308931B2 (en) 2006-08-16 2012-11-13 Novellus Systems, Inc. Method and apparatus for electroplating
US9309604B2 (en) 2008-11-07 2016-04-12 Novellus Systems, Inc. Method and apparatus for electroplating
US8475636B2 (en) 2008-11-07 2013-07-02 Novellus Systems, Inc. Method and apparatus for electroplating
US20100116672A1 (en) * 2008-11-07 2010-05-13 Novellus Systems, Inc. Method and apparatus for electroplating
US9512538B2 (en) 2008-12-10 2016-12-06 Novellus Systems, Inc. Plating cup with contoured cup bottom
US8540857B1 (en) 2008-12-19 2013-09-24 Novellus Systems, Inc. Plating method and apparatus with multiple internally irrigated chambers
US9624592B2 (en) 2010-07-02 2017-04-18 Novellus Systems, Inc. Cross flow manifold for electroplating apparatus
US9464361B2 (en) 2010-07-02 2016-10-11 Novellus Systems, Inc. Control of electrolyte hydrodynamics for efficient mass transfer during electroplating
US9394620B2 (en) 2010-07-02 2016-07-19 Novellus Systems, Inc. Control of electrolyte hydrodynamics for efficient mass transfer during electroplating
US8795480B2 (en) 2010-07-02 2014-08-05 Novellus Systems, Inc. Control of electrolyte hydrodynamics for efficient mass transfer during electroplating
US10233556B2 (en) 2010-07-02 2019-03-19 Lam Research Corporation Dynamic modulation of cross flow manifold during electroplating
US10190230B2 (en) 2010-07-02 2019-01-29 Novellus Systems, Inc. Cross flow manifold for electroplating apparatus
US10053792B2 (en) 2011-09-12 2018-08-21 Novellus Systems, Inc. Plating cup with contoured cup bottom
US10662545B2 (en) 2012-12-12 2020-05-26 Novellus Systems, Inc. Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
US9523155B2 (en) 2012-12-12 2016-12-20 Novellus Systems, Inc. Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
US9834852B2 (en) 2012-12-12 2017-12-05 Novellus Systems, Inc. Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
US10301739B2 (en) 2013-05-01 2019-05-28 Lam Research Corporation Anisotropic high resistance ionic current source (AHRICS)
US9670588B2 (en) 2013-05-01 2017-06-06 Lam Research Corporation Anisotropic high resistance ionic current source (AHRICS)
US9449808B2 (en) 2013-05-29 2016-09-20 Novellus Systems, Inc. Apparatus for advanced packaging applications
US9899230B2 (en) 2013-05-29 2018-02-20 Novellus Systems, Inc. Apparatus for advanced packaging applications
US9816194B2 (en) 2015-03-19 2017-11-14 Lam Research Corporation Control of electrolyte flow dynamics for uniform electroplating
US10014170B2 (en) 2015-05-14 2018-07-03 Lam Research Corporation Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity
US10923340B2 (en) 2015-05-14 2021-02-16 Lam Research Corporation Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity
USD802472S1 (en) * 2015-08-06 2017-11-14 Tokyo Electron Limited Electrostatic chuck for semiconductor manufacturing equipment
USD803802S1 (en) * 2015-08-18 2017-11-28 Tokyo Electron Limited Electrostatic chuck for semiconductor manufacturing equipment
USD795208S1 (en) * 2015-08-18 2017-08-22 Tokyo Electron Limited Electrostatic chuck for semiconductor manufacturing equipment
US10094034B2 (en) 2015-08-28 2018-10-09 Lam Research Corporation Edge flow element for electroplating apparatus
US10364505B2 (en) 2016-05-24 2019-07-30 Lam Research Corporation Dynamic modulation of cross flow manifold during elecroplating
US11047059B2 (en) 2016-05-24 2021-06-29 Lam Research Corporation Dynamic modulation of cross flow manifold during elecroplating
US10832930B2 (en) * 2017-06-16 2020-11-10 Tokyo Electron Limited Electrostatic attraction method
US20180366360A1 (en) * 2017-06-16 2018-12-20 Tokyo Electron Limited Electrostatic attraction method
US11001934B2 (en) 2017-08-21 2021-05-11 Lam Research Corporation Methods and apparatus for flow isolation and focusing during electroplating
US10781527B2 (en) 2017-09-18 2020-09-22 Lam Research Corporation Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating
USD947802S1 (en) 2020-05-20 2022-04-05 Applied Materials, Inc. Replaceable substrate carrier interfacing film
USD984972S1 (en) * 2021-03-29 2023-05-02 Beijing Naura Microelectronics Equipment Co., Ltd. Electrostatic chuck for semiconductor manufacture
USD990441S1 (en) * 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

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