USRE37413E1 - Semiconductor package for a semiconductor chip having centrally located bottom bond pads - Google Patents

Semiconductor package for a semiconductor chip having centrally located bottom bond pads Download PDF

Info

Publication number
USRE37413E1
USRE37413E1 US09/152,702 US15270298A USRE37413E US RE37413 E1 USRE37413 E1 US RE37413E1 US 15270298 A US15270298 A US 15270298A US RE37413 E USRE37413 E US RE37413E
Authority
US
United States
Prior art keywords
leads
semiconductor chip
support
attached
contoured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US09/152,702
Inventor
Gi Bon Cha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Priority to US09/152,702 priority Critical patent/USRE37413E1/en
Assigned to HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. reassignment HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. MERGER (SEE DOCUMENT FOR DETAILS). Assignors: HYUNDAI MICROELECTRONICS CO., LTD.
Assigned to HYUNDAI MICROELECTRONICS CO., LTD. reassignment HYUNDAI MICROELECTRONICS CO., LTD. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: LG SEMICON CO., LTD.
Application granted granted Critical
Publication of USRE37413E1 publication Critical patent/USRE37413E1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49503Lead-frames or other flat leads characterised by the die pad
    • H01L23/4951Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061Disposition
    • H01L2224/0612Layout
    • H01L2224/0613Square or rectangular array
    • H01L2224/06134Square or rectangular array covering only portions of the surface to be connected
    • H01L2224/06136Covering only the central area of the surface to be connected, i.e. central arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826Connecting between the body and an opposite side of the item with respect to the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48699Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49109Connecting at different heights outside the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73215Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49121Beam lead frame or beam lead device
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49146Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49169Assembling electrical component directly to terminal or elongated conductor
    • Y10T29/49171Assembling electrical component directly to terminal or elongated conductor with encapsulating
    • Y10T29/49172Assembling electrical component directly to terminal or elongated conductor with encapsulating by molding of insulating material

Definitions

  • the present invention relates to a semiconductor package, and more particularly to a semiconductor package suitable for packaging a center pad layout-shaped memory chip wherein paddles of a lead frame are removed and outer leads of a lead frame are not protruded from the package but only exposed to a lower surface of molding resin of a semiconductor package.
  • semiconductor packages may be mainly classified into a semiconductor of SOP (small outline package) type and a semiconductor of SOJ (small outline J-lead) type.
  • the semiconductor packages are manufactured in accordance to following procedures.
  • a semiconductor chip is attached on paddles of a lead frame and then wire bonding is carried out between inner leads of the lead frame and pads on the semiconductor chip.
  • the wire bonded semiconductor and lead frame are molded by molding resin. Thereafter, the resulting product is subjected to deflash, trimming and forming procedures so that outer leads of the lead frame are protruded from the molded resin and then bent into predetermined shape respectively.
  • FIGS. 2 and 3 there are shown a front section and a bottom of a semiconductor package of LOC (lead on chip) type.
  • a semiconductor chip 3 is formed with a plurality of bond pads 3 a at central portion thereof.
  • Inner leads 4 a of a lead frame 4 without paddles are attached on a surface of the semiconductor chip 3 at both sides of the bond pads 3 a by means of insulation tapes 6 .
  • the inner leads 4 a are electrically connected to the bond pads 3 a of the semiconductor chip 3 by means of metal wires 7 , respectively.
  • power supplying pads of the bond pads 3 a are electrically connected to bus bars 5 by metal wires 7 , respectively.
  • the resulting semiconductor chip 3 and the inner leads 4 a of the lead frame 4 are molded by molding resin 1 .
  • the above-mentioned prior semiconductor packages are manufactured in such a manner that a semiconductor chip aggregate is subjected to a sawing step for dividing the semiconductor chip aggregate into separate semiconductor chips 3 and the semiconductor chip 3 is subjected to a die bonding step for attaching the separated semiconductor chip 3 to a lead frame 4 , a wire bonding step for electrically connecting bond pads 3 a of the semiconductor chip 3 to inner leads 4 a of the lead frame 4 respectively, a molding step for enveloping the wire bonded semiconductor chip 3 and lead frame 4 , a deflashing step, a solder plating step, a trimming step for cutting dampers of the lead frame 4 , a forming step for bending outer leads into a certain shape, and a marking step.
  • the semiconductor package prepared as described above have outer leads protruded from the mold resin.
  • the outer leads are formed into a certain shape and then mounted on a printed circuit board.
  • the prior semiconductor packages have various disadvantages as follows.
  • the prior semiconductor packages occupy large space due to the outer leads protruded from mold resins when the semiconductor packages are mounted on printed circuit boards.
  • the semiconductor packages require a trimming step and a forming step after a molding procedure, manufacturing process of the packages becomes complicated so that their manufacturing cost and poor products occurring rate are increased.
  • the present invention is made in view of the above-described prior art problems and an object of the invention is to provide a semiconductor package which is designed to occupy small space required to be mounted on a printed circuit board and to reduce manufacturing cost by omitting manufacturing procedures next to a molding procedure.
  • Another object of the invention is to provide a semiconductor package which has improved lead conductance and thus electrical property by reducing length between its inner leads and outer leads.
  • a semiconductor package comprising: a semiconductor chip which is formed with a plurality of bond pads at a central portion of its bottom surface; a lead frame including leads connected to bond pads for input/output of the bond pads respectively and bus bars connected to power supplying pads of the bond pads; insulation adhesives for attaching inner leads of the leads and inner leads of the bus bars to a bottom surface of the semiconductor chip formed with the bond pads; metal wires for electrically connecting the inner leads of the leads and the inner leads of the bus bars to the bond pads respectively; and a molding compound enveloping the semiconductor chip assembly with outer leads of the lead frame exposed to outside.
  • the leads are bent into a certain shape respectively at their inner leads and the outer leads and then the outer leads are attached to polyimide based adhesive tapes.
  • the inner leads of the leads are attached to a bottom surface of the semiconductor chip via insulating films or insulating paste applied to the bottom surface.
  • the attached lead frame and the semiconductor chip are molded such that the outer leads are not protruded from the molded resin but exposed to outside.
  • paddles are omitted and the outer leads are not protruded from the package but exposed to outside so that the exposed outer leads can be connected to a connection pattern of a printed circuit board. Since the semiconductor package has not protruded outer leads, space occupied by the package is reduced when the package is mounted on a printed circuit board. Also, it is possible to abbreviate trimming and forming procedures next to a molding procedure in its manufacturing process.
  • FIG. 1A is a schematic view of a prior SOP type of semiconductor package
  • FIG. 1B is a schematic view of a prior SOJ type of semiconductor package
  • FIG. 2 is a vertical sectional view of a prior LOC type of semiconductor package
  • FIG. 3 is a bottom plan view of the semiconductor package shown in FIG. 2, showing its inner construction
  • FIG. 4 is a vertical sectional view of a semiconductor package according to the present invention.
  • FIG. 5 is a bottom plan view of the semiconductor package shown in FIG. 4, showing its inner construction
  • FIG. 6A is a front elevational view of a semiconductor package according to the invention.
  • FIG. 6B is a bottom plan view of the semiconductor package shown in FIG. 6 A. ;
  • FIG. 4 shows a vertical section of a semiconductor package according to the present invention
  • FIG. 5 shows an inner construction of the semiconductor package shown in FIG. 4 .
  • the semiconductor package of the present invention comprises a semiconductor chid 3 which is formed with a plurality of bond pads 3 a at a central portion of its bottom surface, a lead frame 10 including leads 11 connected to bond pads for input/output of the bond pads 3 a respectively and bus bars 12 connected to power supplying pads of the bond pads 3 a, insulation adhesives 6 for attaching inner leads 11 of the leads 11 and inner leads 12 a of the bus bars 12 to a bottom surface of the semiconductor chip 3 formed with the bond pads 3 a, metal wires 7 for electrically connecting the inner leads 11 a of the leads 11 and the inner leads 12 a of the bus bars 12 to the bond pads 3 a respectively, and a molding compound 8 enveloping the semiconductor chip assembly with outer leads 11 b and 12 b of the lead frame 10 exposed to outside.
  • the plurality of inner leads 11 a, 12 a and outer leads 11 b, 12 b of the leads 11 and the bus bars 12 are bent into a predetermined shape respectively and arranged in a row. Then, the outer leads 11 b, 12 b are attached to adhesive tapes (not shown) at their outer surfaces so that the leads 11 and the bus bars 12 are integrally held.
  • the adhesive tapes which may serve as a support during a molding procedure, are removed after a the molding procedure.
  • the lead frame 10 is attached to the semiconductor package 3 in such a manner that insulating adhesives 6 such as insulating films and insulating paste are applied to the bottom surface of the semiconductor chip 3 formed with the bond pads 3 a and then the inner leads 11 a, 12 a of the leads 11 and the bus bars 12 are attached to the insulating adhesives 6 .
  • insulating adhesives 6 such as insulating films and insulating paste are applied to the bottom surface of the semiconductor chip 3 formed with the bond pads 3 a and then the inner leads 11 a, 12 a of the leads 11 and the bus bars 12 are attached to the insulating adhesives 6 .
  • the leads 11 and the bus bars 12 of the semiconductor package of the present invention are shorter than those of a prior LOC type of semiconductor package in lengths between its inner leads 11 a, 12 a and its outer leads 11 b, 12 b so that lead conductance is increased when a memory chip of 16-mega-bit DRAM or greater is packaged.
  • heat occurring in operation of chip can be easily discharged from the short leads.
  • FIG. 6A shows a front side of the semiconductor package of the invention and FIG. 6B shows a bottom surface of semiconductor package of the invention.
  • the outer leads 11 b and 12 b of the leads 11 and the bus bars 12 are not protruded from the semiconductor package but are flush with the bottom surface of the semiconductor package.
  • the outer leads 11 b and 12 b of the leads 11 and the bus bars 12 are arranged in a row at the bottom surface of the package and faces to outside to be contacted with elements of a printed circuit board, as shown in FIG. 6B.
  • the leads may be elongated and contoured and extend away from the bottom surface, and the exposed portion of the leads may occupy less than a majority portion of the bottom surface.
  • a semiconductor chip 3 which has been cut separately is applied with insulating adhesive 6 such insulating film and insulating paste at its bottom surface formed with bond pads 3 a.
  • Inner leads 11 a and 12 a of leads 11 and bus bars 12 are attached to the bottom surface of the chid via the insulating adhesive 6 applied to the bottom surface.
  • the lead frame 10 attached to the semiconductor chip 3 is die-attached in a wire bonder (a wire bonding apparatus) and subjected to a wire bonding procedure for electrically connecting the inner leads 11 a, 12 a of the leads 11 and the bus bars 12 to the bond pads 3 a by metal wires 7 such as gold and aluminum wires.
  • a wire bonder a wire bonding apparatus
  • the resulting semiconductor chip assembly is subjected to a known transfer molding procedure to be enveloped. Then, as adhesive tapes attached to a bottom surface of the molded resin are removed, the outer leads 11 b and 12 b of the leads 11 and the bus bars 12 are exposed to outside. Thereafter, as the bottom surface of the molded package and the exposed outer leads are simply removed by a deflash procedure, the manufacturing process of the semiconductor package is completed.
  • the semiconductor package of the invention as prepared above is mounted on a printed circuit board such that the exposed outer leads 11 b and 12 b are connected to a pattern of printed circuit board by a soldering.
  • FIG. 7 illustrates a manufacturing process such as described herein.
  • the semiconductor chip is manufactured, as described earlier.
  • leads 11 are formed and attached to the support, which may be an adhesive tape as described earlier.
  • inner leads 11 a and 12 a are attached to semiconductor chip 3 with insulating adhesive 6 .
  • inner leads 11 a and 12 a are wire bonded to bond pads 3 a.
  • the resulting semiconductor chip assembly is subjected to a transfer molding procedure.
  • the adhesive tapes serving as the support during the molding procedure are removed.
  • the semiconductor package of the present invention is mounted on a printed circuit board.
  • the present invention can leave out procedures next to a molding step. That is, since a prior semiconductor package has outer leads protruded therefrom, a manufacturing process of a prior semiconductor package requires a forming procedure for bending the protruded outer leads and a trimming procedure for cutting dampers of leads. However, since leads according to the invention are attached to adhesive tapes to form an integral lead frame and outer leads of leads are exposed to outside, a manufacturing process of the invention does not require trimming and forming procedures.
  • the present invention has advantages in that since the number of manufacturing steps is significantly reduced, occurrence of poor products and manufacturing cost are reduced.
  • the semiconductor package of the invention since the semiconductor package of the invention has not outer leads protruded therefrom, space occupied by the semiconductor package is reduced thereby allowing the packages to be densely mounted when the packages are mounted on a printed circuit board.
  • the semiconductor package of the invention has leads shortened as possible as, it is possible to improve its electrical property and to radiate heat easily as compared with prior art.
  • the semiconductor package of the invention While prior semiconductor package may have gaps between outer leads and a molded resin due to outer shock applied to the outer leads during trimming and forming procedures, the semiconductor package of the invention has outer leads exposed to out side and does not require trimming and forming procedures so that the outer leads are not shocked. Therefore, the semiconductor package of the invention can prevent gaps from occurring in the contact area and thus improve humidity resistance. Also, since the semiconductor package is tested in state of tip, the test can be precisely carried out without a particular testing socket. That is, “Good rate” can be reduced.

Abstract

A semiconductor package having outer leads which are not protruded from the package but only exposed to outside. The semiconductor package comprises a semiconductor chip which is formed with a plurality of bond pads at a central portion of its bottom surface, a lead frame including leads connected to bond pads for input/output of the bond pads respectively and bus bars connected to power supplying pads of the bond pads, insulation adhesives for attaching inner leads of the leads and inner leads of the bus bars to a bottom surface of the semiconductor chip formed with the bond pads, metal wires for electrically connecting the inner leads of the leads and the inner leads of the bus bars to the bond pads respectively, and a molding compound enveloping the semiconductor chip assembly with outer leads of the lead frame exposed to outside. The adhesive tapes are removed after a molding procedure.

Description

This is a Divisional Reissue Application of application Ser. No. 08/748,460 filed Nov. 8, 1996 (now matured into U.S. Pat. No. Re. 36,097 ), which is a Reissue Application of U.S. Pat. No. 5,363,279 issued on Nov. 8, 1994.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a semiconductor package, and more particularly to a semiconductor package suitable for packaging a center pad layout-shaped memory chip wherein paddles of a lead frame are removed and outer leads of a lead frame are not protruded from the package but only exposed to a lower surface of molding resin of a semiconductor package.
2. Description of the Prior Art
Generally, semiconductor packages may be mainly classified into a semiconductor of SOP (small outline package) type and a semiconductor of SOJ (small outline J-lead) type.
In this case, the semiconductor packages are manufactured in accordance to following procedures. A semiconductor chip is attached on paddles of a lead frame and then wire bonding is carried out between inner leads of the lead frame and pads on the semiconductor chip. The wire bonded semiconductor and lead frame are molded by molding resin. Thereafter, the resulting product is subjected to deflash, trimming and forming procedures so that outer leads of the lead frame are protruded from the molded resin and then bent into predetermined shape respectively.
Referring to FIGS. 2 and 3, there are shown a front section and a bottom of a semiconductor package of LOC (lead on chip) type. In the semiconductor package shown in FIGS. 2 and 3, a semiconductor chip 3 is formed with a plurality of bond pads 3a at central portion thereof. Inner leads 4a of a lead frame 4 without paddles are attached on a surface of the semiconductor chip 3 at both sides of the bond pads 3a by means of insulation tapes 6. The inner leads 4a are electrically connected to the bond pads 3a of the semiconductor chip 3 by means of metal wires 7, respectively. Also, power supplying pads of the bond pads 3a are electrically connected to bus bars 5 by metal wires 7, respectively. Thereafter, the resulting semiconductor chip 3 and the inner leads 4a of the lead frame 4 are molded by molding resin 1.
The above-mentioned prior semiconductor packages are manufactured in such a manner that a semiconductor chip aggregate is subjected to a sawing step for dividing the semiconductor chip aggregate into separate semiconductor chips 3 and the semiconductor chip 3 is subjected to a die bonding step for attaching the separated semiconductor chip 3 to a lead frame 4, a wire bonding step for electrically connecting bond pads 3a of the semiconductor chip 3 to inner leads 4a of the lead frame 4 respectively, a molding step for enveloping the wire bonded semiconductor chip 3 and lead frame 4, a deflashing step, a solder plating step, a trimming step for cutting dampers of the lead frame 4, a forming step for bending outer leads into a certain shape, and a marking step.
The semiconductor package prepared as described above have outer leads protruded from the mold resin. The outer leads are formed into a certain shape and then mounted on a printed circuit board.
However, the prior semiconductor packages have various disadvantages as follows. The prior semiconductor packages occupy large space due to the outer leads protruded from mold resins when the semiconductor packages are mounted on printed circuit boards.
Since the semiconductor packages have outer mechanical shock when their forming procedure, fine gaps may occur in contact areas between outer leads protruded from package bodies and mold resins, thereby causing humidity resistant property to be deteriorated due to the gaps.
Also, since the semiconductor packages require a trimming step and a forming step after a molding procedure, manufacturing process of the packages becomes complicated so that their manufacturing cost and poor products occurring rate are increased.
In addition, in case of the LOC type of semiconductor packages using lead frames without paddles, electrical property is decreased because of their long length between inner leads and outer leads.
Furthermore, so-called “good rate” which is a rate of good products in products identified as poor packages is increased because of poor lead contacts in testing of finished products.
SUMMARY OF THE INVENTION
Therefore, the present invention is made in view of the above-described prior art problems and an object of the invention is to provide a semiconductor package which is designed to occupy small space required to be mounted on a printed circuit board and to reduce manufacturing cost by omitting manufacturing procedures next to a molding procedure.
Another object of the invention is to provide a semiconductor package which has improved lead conductance and thus electrical property by reducing length between its inner leads and outer leads.
In accordance with the present invention, these object can be accomplished by providing a semiconductor package comprising: a semiconductor chip which is formed with a plurality of bond pads at a central portion of its bottom surface; a lead frame including leads connected to bond pads for input/output of the bond pads respectively and bus bars connected to power supplying pads of the bond pads; insulation adhesives for attaching inner leads of the leads and inner leads of the bus bars to a bottom surface of the semiconductor chip formed with the bond pads; metal wires for electrically connecting the inner leads of the leads and the inner leads of the bus bars to the bond pads respectively; and a molding compound enveloping the semiconductor chip assembly with outer leads of the lead frame exposed to outside.
Since the leads of the invention are shortened in length between their inner leads wire-bonded to the bond pads of the semiconductor chip and their outer leads exposed to outside, it is possible to improve lead conductance in a LOC type of semiconductor package and to radiate easily heat occurring in operation of the chip due to their short leads. Particularly, the semiconductor package is appropriate to package a semiconductor chip of 16-mega-bit DRAM or greater which is formed with bond pads at its central portion.
The leads are bent into a certain shape respectively at their inner leads and the outer leads and then the outer leads are attached to polyimide based adhesive tapes. The inner leads of the leads are attached to a bottom surface of the semiconductor chip via insulating films or insulating paste applied to the bottom surface. The attached lead frame and the semiconductor chip are molded such that the outer leads are not protruded from the molded resin but exposed to outside.
In accordance to the invention as described above, paddles are omitted and the outer leads are not protruded from the package but exposed to outside so that the exposed outer leads can be connected to a connection pattern of a printed circuit board. Since the semiconductor package has not protruded outer leads, space occupied by the package is reduced when the package is mounted on a printed circuit board. Also, it is possible to abbreviate trimming and forming procedures next to a molding procedure in its manufacturing process.
BRIEF DESCRIPTION OF THE DRAWINGS
These and other objects and aspects of the invention will become apparent from the following description of an embodiment with reference to the accompanying drawings in which:
FIG. 1A is a schematic view of a prior SOP type of semiconductor package;
FIG. 1B is a schematic view of a prior SOJ type of semiconductor package;
FIG. 2 is a vertical sectional view of a prior LOC type of semiconductor package;
FIG. 3 is a bottom plan view of the semiconductor package shown in FIG. 2, showing its inner construction;
FIG. 4 is a vertical sectional view of a semiconductor package according to the present invention;
FIG. 5 is a bottom plan view of the semiconductor package shown in FIG. 4, showing its inner construction;
FIG. 6A is a front elevational view of a semiconductor package according to the invention; and
FIG. 6B is a bottom plan view of the semiconductor package shown in FIG. 6A. ; and
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
The present invention will now be described by referring to FIGS. 4 to 6 in the accompanying drawings. FIG. 4 shows a vertical section of a semiconductor package according to the present invention and FIG. 5 shows an inner construction of the semiconductor package shown in FIG. 4.
As shown in the drawings, the semiconductor package of the present invention comprises a semiconductor chid 3 which is formed with a plurality of bond pads 3a at a central portion of its bottom surface, a lead frame 10 including leads 11 connected to bond pads for input/output of the bond pads 3a respectively and bus bars 12 connected to power supplying pads of the bond pads 3a, insulation adhesives 6 for attaching inner leads 11 of the leads 11 and inner leads 12a of the bus bars 12 to a bottom surface of the semiconductor chip 3 formed with the bond pads 3a, metal wires 7 for electrically connecting the inner leads 11a of the leads 11 and the inner leads 12a of the bus bars 12 to the bond pads 3a respectively, and a molding compound 8 enveloping the semiconductor chip assembly with outer leads 11b and 12b of the lead frame 10 exposed to outside.
In this description, the substantially identical or similar elements of the semiconductor package of the invention to those of the prior art illustrated in FIGS. 1 to 3 are designated by the similar reference characters.
The plurality of inner leads 11a, 12a and outer leads 11b, 12b of the leads 11 and the bus bars 12 are bent into a predetermined shape respectively and arranged in a row. Then, the outer leads 11b, 12b are attached to adhesive tapes (not shown) at their outer surfaces so that the leads 11 and the bus bars 12 are integrally held. The adhesive tapes, which may serve as a support during a molding procedure, are removed after a the molding procedure.
The lead frame 10 is attached to the semiconductor package 3 in such a manner that insulating adhesives 6 such as insulating films and insulating paste are applied to the bottom surface of the semiconductor chip 3 formed with the bond pads 3a and then the inner leads 11a, 12a of the leads 11 and the bus bars 12 are attached to the insulating adhesives 6.
Also, the leads 11 and the bus bars 12 of the semiconductor package of the present invention are shorter than those of a prior LOC type of semiconductor package in lengths between its inner leads 11a, 12a and its outer leads 11b, 12b so that lead conductance is increased when a memory chip of 16-mega-bit DRAM or greater is packaged. In addition, heat occurring in operation of chip can be easily discharged from the short leads.
FIG. 6A shows a front side of the semiconductor package of the invention and FIG. 6B shows a bottom surface of semiconductor package of the invention. As shown in FIG. 6A, the outer leads 11b and 12b of the leads 11 and the bus bars 12 are not protruded from the semiconductor package but are flush with the bottom surface of the semiconductor package.
That is, the outer leads 11b and 12b of the leads 11 and the bus bars 12 are arranged in a row at the bottom surface of the package and faces to outside to be contacted with elements of a printed circuit board, as shown in FIG. 6B. As shown in FIGS. 4 and 6B, the leads may be elongated and contoured and extend away from the bottom surface, and the exposed portion of the leads may occupy less than a majority portion of the bottom surface.
A manufacturing process of the semiconductor package as constructed above will be described in detail hereinafter.
First, a semiconductor chip 3 which has been cut separately is applied with insulating adhesive 6 such insulating film and insulating paste at its bottom surface formed with bond pads 3a. Inner leads 11a and 12a of leads 11 and bus bars 12 are attached to the bottom surface of the chid via the insulating adhesive 6 applied to the bottom surface.
Thereafter, the lead frame 10 attached to the semiconductor chip 3 is die-attached in a wire bonder (a wire bonding apparatus) and subjected to a wire bonding procedure for electrically connecting the inner leads 11a, 12a of the leads 11 and the bus bars 12 to the bond pads 3a by metal wires 7 such as gold and aluminum wires.
Subsequently, the resulting semiconductor chip assembly is subjected to a known transfer molding procedure to be enveloped. Then, as adhesive tapes attached to a bottom surface of the molded resin are removed, the outer leads 11b and 12b of the leads 11 and the bus bars 12 are exposed to outside. Thereafter, as the bottom surface of the molded package and the exposed outer leads are simply removed by a deflash procedure, the manufacturing process of the semiconductor package is completed.
The semiconductor package of the invention as prepared above is mounted on a printed circuit board such that the exposed outer leads 11b and 12b are connected to a pattern of printed circuit board by a soldering.
FIG. 7 illustrates a manufacturing process such as described herein. At step 15, the semiconductor chip is manufactured, as described earlier. At step 16, leads 11 are formed and attached to the support, which may be an adhesive tape as described earlier. At step 17, inner leads 11a and 12a are attached to semiconductor chip 3 with insulating adhesive 6. At step 18, inner leads 11a and 12a are wire bonded to bond pads 3a. At step 19, the resulting semiconductor chip assembly is subjected to a transfer molding procedure. At step 20, the adhesive tapes serving as the support during the molding procedure are removed. At step 21, the semiconductor package of the present invention is mounted on a printed circuit board.
As apparent from the above description, the present invention can leave out procedures next to a molding step. That is, since a prior semiconductor package has outer leads protruded therefrom, a manufacturing process of a prior semiconductor package requires a forming procedure for bending the protruded outer leads and a trimming procedure for cutting dampers of leads. However, since leads according to the invention are attached to adhesive tapes to form an integral lead frame and outer leads of leads are exposed to outside, a manufacturing process of the invention does not require trimming and forming procedures.
Therefore, the present invention has advantages in that since the number of manufacturing steps is significantly reduced, occurrence of poor products and manufacturing cost are reduced.
Also, since the semiconductor package of the invention has not outer leads protruded therefrom, space occupied by the semiconductor package is reduced thereby allowing the packages to be densely mounted when the packages are mounted on a printed circuit board.
In addition, since the semiconductor package of the invention has leads shortened as possible as, it is possible to improve its electrical property and to radiate heat easily as compared with prior art.
While prior semiconductor package may have gaps between outer leads and a molded resin due to outer shock applied to the outer leads during trimming and forming procedures, the semiconductor package of the invention has outer leads exposed to out side and does not require trimming and forming procedures so that the outer leads are not shocked. Therefore, the semiconductor package of the invention can prevent gaps from occurring in the contact area and thus improve humidity resistance. Also, since the semiconductor package is tested in state of tip, the test can be precisely carried out without a particular testing socket. That is, “Good rate” can be reduced.
Changes in construction will occur to those skilled in the art and various apparently different modifications and embodiments may be made without departing from the scope of the invention. The matter set forth in the foregoing description and accompanying drawings is offered by way of illustration only. It is therefore intended that the foregoing description be regarded as illustrative rather than limiting.

Claims (43)

What is claimed is:
1. A semiconductor package comprising:
a semiconductor chip with a plurality of bond pads including at least one power supplying bond pad at a central portion of a bottom surface of said semiconductor chip;
a plurality of leads connected to bond pads for input/output of said bond pads, respectively, each of said leads defining an inner lead and an outer lead;
at least one bus bar connected to said at least one power supplying bond pad, said at least one bus bar defining an inner lead and an outer lead;
insulation adhesives for attaching said inner leads of each of the leads and said at least one bus bar to said bottom surface of the semiconductor chip;
metal wires for electrically connecting the inner leads of the leads and the at least one bus bar to the bond pads, respectively; and
a molding compound enveloping the semiconductor chip, and the inner leads of the leads and the bus bar with bottom surfaces of said outer leads of the leads and the bus bar exposed to outside on the bottom surface of said molding compound.
2. A semiconductor package according to claim 1, wherein said adhesive tapes are polyimide based tapes.
3. A semiconductor package according to claim 1, wherein said adhesive is an insulating film.
4. A semiconductor package according to claim 1, wherein said adhesive is insulating paste.
5. A semiconductor package according to claim 1, wherein said metal wires are gold wires.
6. A semiconductor package according to claim 1, wherein said metal wires are aluminum wires.
7. A method of packaging a semiconductor device, comprising the steps of:
forming a plurality of contoured leads attached to a support;
attaching the plurality of contoured leads to the semiconductor chip with an insulating adhesive, wherein the contoured leads each have at least a first portion and a second portion, wherein the chip is attached at a first portion of the contoured leads, wherein the contoured leads extend away from a point where a bottom surface of the semiconductor device will be formed to provide for electrical connection of the contoured leads to the semiconductor chip;
electrically connecting the contoured leads to the semiconductor chip;
molding the semiconductor chip and the plurality of contoured leads with a resin, wherein the support is attached to the second portion of the contoured leads during the molding, wherein the semiconductor chip is completely enveloped by the resin, wherein the second portion of the contoured leads attached to the support during the molding are not covered by the resin; and
removing the support from the second portion of the contoured leads, wherein the second portion of the contoured leads is exposed to provide electrical connection points, wherein the second portion of the contoured leads is flush with the bottom surface of the semiconductor device.
8. The method of claim 7, wherein the support comprises an adhesive tape.
9. The method of claim 7, further comprising the step of connecting the exposed second portion of the contoured leads to a printed circuit board.
10. The method of claim 7, wherein the contoured leads are elongated and contoured to extend away from the bottom surface of the semiconductor device.
11. The method of claim 7, wherein the contoured leads are contoured away from the bottom surface of the semiconductor device to provide a portion for wire bonding of the contoured leads to the semiconductor chip.
12. The method of claim 7, wherein the exposed second portions of the contoured leads comprises less than a majority portion of the area of the bottom surface.
13. The method of claim 7, wherein the semiconductor chip has a length, wherein the contoured leads extend along the length of the semiconductor chip.
14. The method of claim 13, wherein the contoured leads do not extend beyond the length of the semiconductor chip.
15. The method of claim 14, wherein the semiconductor device comprises a memory device.
16. The method of claim 13, wherein the semiconductor device comprises a memory device.
17. The method of claim 7, wherein the semiconductor chip has a major surface on which are formed circuit elements, wherein the contoured leads are attached to the major surface by the insulating adhesive.
18. The method of claim 17, wherein the contoured leads are attached at a central portion of the major surface.
19. The method of claim 17, wherein the insulating adhesive comprises an insulating film.
20. The method of claim 17, wherein the insulating adhesive comprises an insulating paste.
21. The method of claim 7, wherein at least one of the contoured leads comprises a power supply bus bar.
22. The method of claim 21, wherein the power supply bus bar is attached to a central portion of the semiconductor chip.
23. The method of claim 7, wherein the contoured leads are electrically connected to the semiconductor chip with bonding wires.
24. The method of claim 7, wherein the exposed second portions of the contoured leads are positioned on the bottom surface of the semiconductor package, wherein the exposed second portion of the contoured leads do not extend beyond the bottom surface of the semiconductor package.
25. A method of packaging a semiconductor device, comprising the steps of:
manufacturing a semiconductor chip;
forming a plurality of leads, wherein the leads each have at least a first portion and a second portion, and attaching the leads to a support, wherein the support is attached to the leads at the second portion;
attaching the plurality of leads to the semiconductor chip with an insulating adhesive, wherein the chip is attached at the first portion of the leads;
electrically connecting the leads to the semiconductor chip;
molding the semiconductor chip and the plurality of leads with a resin, wherein the support is attached to the second portion of the leads during the molding, wherein the second portion of the leads are not covered by the resin; and
removing the support from the second portion of the leads, wherein the second portion of the leads is exposed to provide electrical connection points,
wherein the semiconductor chip has a length, wherein the leads extend along the length of the semiconductor chip, and
wherein the leads do not extend beyond the length of the semiconductor chip.
26. The method of claim 25, further comprising the step of connecting the exposed second portion of the leads to a printed circuit board.
27. The method of claim 25, wherein the exposed second portions of the leads are positioned on a bottom surface of the semiconductor device.
28. The method of claim 27, wherein the leads are contoured to extend away from the bottom surface of the semiconductor device.
29. The method of claim 27, wherein the leads are elongated and contoured to extend away from the bottom surface of the semiconductor device.
30. The method of claim 27, wherein the leads are flush with the bottom surface of the semiconductor device.
31. The method of claim 27, wherein the leads are contoured away from the bottom surface of the semiconductor device to provide a portion for wire bonding of the leads to the semiconductor chip.
32. The method of claim 25, wherein the semiconductor device comprises a memory device.
33. The method of claim 25, wherein the leads are electrically connected to the semiconductor chip with bonding wires.
34. The method of claim 25, wherein the exposed second portions of the leads are positioned on a bottom surface of the semiconductor package, wherein the exposed second portions of the leads do not extend beyond the bottom surface of the semiconductor package.
35. A method of packaging a semiconductor device, comprising the steps of:
manufacturing a semiconductor chip;
forming a plurality of leads, wherein the leads each have at least a first portion and a second portion, and attaching the leads to a support, wherein the support is attached to the leads at the second portion;
attaching the plurality of leads to the semiconductor chip with an insulating adhesive, wherein the chip is attached at the first portion of the leads;
electrically connecting the leads to the semiconductor chip;
molding the semiconductor chip and the plurality of leads with a resin, wherein the support is attached to the second portion of the leads during the molding, wherein the second portion of the leads are not covered by the resin; and
removing the support from the second portion of the leads, wherein the second portion of the leads is exposed to provide electrical connection points,
wherein the support comprises an adhesive tape.
36. A method of packaging a semiconductor device, comprising the steps of:
manufacturing a semiconductor chip;
forming a plurality of leads, wherein the leads each have at least a first portion and a second portion, and attaching the leads to a support, wherein the support is attached to the leads at the second portion;
attaching the plurality of leads to the semiconductor chip with an insulating adhesive, wherein the chip is attached to the first portion of the leads;
electrically connecting the leads to the semiconductor chip;
molding the semiconductor chip and the plurality of lead with a resin, wherein the support is attached to the second portion of the leads during the molding, wherein the second portion of the leads are not covered by the resin; and
removing the support from the second portion of the leads, wherein the second portion of the leads is exposed to provide electrical connection points;
wherein the exposed second portions of the leads are positioned on a bottom surface of the semiconductor device, and
wherein the exposed second portions of the leads comprise less than a majority portion of the area of the bottom surface.
37. A method of packaging a semiconductor device, comprising the steps of:
manufacturing a semiconductor chip;
forming a plurality of leads, wherein the leads each have at least a first portion and a second portion, and attaching the leads to a support, wherein the support is attached to the leads at the second portion;
attaching the plurality of leads to the semiconductor chip with an insulating adhesive, wherein the chip is attached at the first portion of the leads;
electrically connecting the leads to the semiconductor chip;
molding the semiconductor chip and the plurality of leads with a resin, wherein the support is attached to the second portion of the leads during the molding, wherein the second portion of the leads are not covered by the resin; and
removing the support from the second portion of the leads, wherein the second portion of the leads is exposed to provide electrical connection points,
wherein the semiconductor chip has a length, wherein the leads extend along the length of the semiconductor chip, and wherein the leads do not extend beyond the length of the semiconductor chip, and
wherein the semiconductor device comprises a memory device.
38. A method of packaging a semiconductor device, comprising the steps of:
manufacturing a semiconductor chip;
forming a plurality of leads, wherein the leads each have at least a first portion and a second portion, and attaching the leads to a support, wherein the support is attached to the leads at the second portion;
attaching the plurality of leads to the semiconductor chip with an insulating adhesive, wherein the chip is attached at the first portion of the leads;
electrically connecting the leads to the semiconductor chip;
molding the semiconductor chip and the plurality of leads with a resin, wherein the support is attached to the second portion of the leads during the molding, wherein the second portion of the leads are not covered by the resin; and
removing the support from the second portion of the leads, wherein the second portion of the leads is exposed to provide electrical connection points,
wherein the semiconductor chip has a major surface on which are formed circuit elements, wherein the leads are attached to the major surface by the insulating adhesive.
39. A method of packaging a semiconductor device, comprising the steps of:
manufacturing a semiconductor chip;
forming a plurality of leads, wherein the leads each have at least a first portion and a second portion, and attaching the leads to a support, wherein the support is attached to the leads at the second portion;
attaching the plurality of leads to the semiconductor chip with an insulating adhesive, wherein the chip is attached at the first portion of the leads;
electrically connecting the leads to the semiconductor chip;
molding the semiconductor chip and the plurality of leads with a resin, wherein the support is attached to the second portion of the leads during the molding, wherein the second portion of the leads are not covered by the resin; and
removing the support from the second portion of the leads, wherein the second portion of the leads is exposed to provide electrical connection points,
wherein the semiconductor chip has a major surface on which are formed circuit elements, wherein the leads are attached to the major surface by the insulating adhesive, and
wherein the leads are attached at a central portion of the major surface.
40. A method of packaging a semiconductor device, comprising the steps of:
manufacturing a semiconductor chip;
forming a plurality of leads, wherein the leads each have at least a first portion and a second portion, and attaching the leads to a support, wherein the support is attached to the leads at the second portion;
attaching the plurality of leads to the semiconductor chip with an insulating adhesive, wherein the chip is attached at the first portion of the leads;
electrically connecting the leads to the semiconductor chip;
molding the semiconductor chip and the plurality of leads with a resin, wherein the support is attached to the second portion of the leads during the molding, wherein the second portion of the leads are not covered by the resin; and
removing the support from the second portion of the leads, wherein the second portion of the leads is exposed to provide electrical connection points,
wherein the semiconductor chip has a major surface on which are formed circuit elements, wherein the leads are attached to the major surface by the insulating adhesive, and
wherein the insulating adhesive comprises an insulating film.
41. A method of packaging a semiconductor device, comprising the steps of:
manufacturing a semiconductor chip;
forming a plurality of leads, wherein the leads each have at least a first portion and a second portion, and attaching the leads to a support, wherein the support is attached to the leads at the second portion;
attaching the plurality of leads to the semiconductor chip with an insulating adhesive, wherein the chip is attached at the first portion of the leads;
electrically connecting the leads to the semiconductor chip;
molding the semiconductor chip and the plurality of lead with a resin, wherein the support is attached to the second portion of the leads during the molding, wherein the second portion of the leads are not covered by the resin; and
removing the support from the second portion of the leads, wherein the second portion of the leads is exposed to provide electrical connection points,
wherein the semiconductor chip has a major surface on which are formed circuit elements, wherein the leads are attached to the major surface by the insulating adhesive, and
wherein the insulating adhesive comprises an insulating paste.
42. A method of packaging a semiconductor device, comprising the steps of:
manufacturing a semiconductor chip;
forming a plurality of leads, wherein the leads each have at least a first portion and a second portion, and attached the leads to a support, wherein the support is attaching to the leads at the second portion;
attaching the plurality of leads to the semiconductor chip with an insulating adhesive, wherein the chip is attached at the first portion of the leads;
electrically connecting the leads to the semiconductor chip;
molding the semiconductor chip and the plurality of leads with a resin, wherein the support is attached to the second portion of the leads during the molding, wherein the second portion of the leads are not covered by the resin; and
removing the support from the second portion of the leads, wherein the second portion of the leads is exposed to provide electrical connection points,
wherein at least one of the leads comprises a power supply bus bar.
43. A method of packaging a semiconductor device, comprising the steps of:
manufacturing a semiconductor chip;
forming a plurality of leads, wherein the leads each have at least a first portion and a second portion, and attaching the leads to a support, wherein the support is attached to the leads at the second portion;
attaching the plurality of leads to the semiconductor chip with an insulating adhesive, wherein the chip is attached at the first portion of the leads;
electrically connecting the leads to the semiconductor chip;
molding the semiconductor chip and the plurality of leads with a resin, wherein the support is attached to the second portion of the leads during the molding, wherein the second portion of the leads are not covered by the resin; and
removing the support from the second portion of the leads, wherein the second portion of the leads is exposed to provide electrical connection points,
wherein at least one of the leads comprises a power supply bus bar; and
wherein the power supply bus bar is attached to a central portion of the semiconductor chip.
US09/152,702 1991-11-14 1998-09-14 Semiconductor package for a semiconductor chip having centrally located bottom bond pads Expired - Lifetime USRE37413E1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US09/152,702 USRE37413E1 (en) 1991-11-14 1998-09-14 Semiconductor package for a semiconductor chip having centrally located bottom bond pads

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR91-19458 1991-11-14
KR2019910019458U KR940007757Y1 (en) 1991-11-14 1991-11-14 Semiconductor package
US07/970,771 US5363279A (en) 1991-11-14 1992-11-03 Semiconductor package for a semiconductor chip having centrally located bottom bond pads
US08/748,460 USRE36097E (en) 1991-11-14 1996-11-08 Semiconductor package for a semiconductor chip having centrally located bottom bond pads
US09/152,702 USRE37413E1 (en) 1991-11-14 1998-09-14 Semiconductor package for a semiconductor chip having centrally located bottom bond pads

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US07/970,771 Reissue US5363279A (en) 1991-11-14 1992-11-03 Semiconductor package for a semiconductor chip having centrally located bottom bond pads

Publications (1)

Publication Number Publication Date
USRE37413E1 true USRE37413E1 (en) 2001-10-16

Family

ID=19322207

Family Applications (3)

Application Number Title Priority Date Filing Date
US07/970,771 Ceased US5363279A (en) 1991-11-14 1992-11-03 Semiconductor package for a semiconductor chip having centrally located bottom bond pads
US08/748,460 Expired - Lifetime USRE36097E (en) 1991-11-14 1996-11-08 Semiconductor package for a semiconductor chip having centrally located bottom bond pads
US09/152,702 Expired - Lifetime USRE37413E1 (en) 1991-11-14 1998-09-14 Semiconductor package for a semiconductor chip having centrally located bottom bond pads

Family Applications Before (2)

Application Number Title Priority Date Filing Date
US07/970,771 Ceased US5363279A (en) 1991-11-14 1992-11-03 Semiconductor package for a semiconductor chip having centrally located bottom bond pads
US08/748,460 Expired - Lifetime USRE36097E (en) 1991-11-14 1996-11-08 Semiconductor package for a semiconductor chip having centrally located bottom bond pads

Country Status (4)

Country Link
US (3) US5363279A (en)
JP (2) JPH0546045U (en)
KR (1) KR940007757Y1 (en)
DE (1) DE4238646B4 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030116839A1 (en) * 2001-12-24 2003-06-26 Wolfgang Knapp Semiconductor module and method of producing a semiconductor module

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6165819A (en) 1992-10-20 2000-12-26 Fujitsu Limited Semiconductor device, method of producing semiconductor device and semiconductor device mounting structure
US6084309A (en) * 1992-10-20 2000-07-04 Fujitsu Limited Semiconductor device and semiconductor device mounting structure
JP2934357B2 (en) * 1992-10-20 1999-08-16 富士通株式会社 Semiconductor device
KR0152901B1 (en) * 1993-06-23 1998-10-01 문정환 Plastic package and method for manufacture thereof
US5812148A (en) * 1993-11-11 1998-09-22 Oki Electric Industry Co., Ltd. Serial access memory
US5656550A (en) * 1994-08-24 1997-08-12 Fujitsu Limited Method of producing a semicondutor device having a lead portion with outer connecting terminal
TW314650B (en) * 1995-06-21 1997-09-01 Oki Electric Ind Co Ltd
KR0169820B1 (en) * 1995-08-22 1999-01-15 김광호 Chip scale package with metal wiring substrate
US5866939A (en) * 1996-01-21 1999-02-02 Anam Semiconductor Inc. Lead end grid array semiconductor package
US6043100A (en) * 1996-04-19 2000-03-28 Weaver; Kevin Chip on tape die reframe process
KR0179920B1 (en) * 1996-05-17 1999-03-20 문정환 Method of manufacturing chip-size package
JPH09327990A (en) * 1996-06-11 1997-12-22 Toshiba Corp Card type storing device
KR100206910B1 (en) * 1996-06-14 1999-07-01 구본준 Diflash method of semiconductor package
KR0179925B1 (en) * 1996-06-14 1999-03-20 문정환 Lead frame, bottom lead semiconductor package using it
KR0179924B1 (en) * 1996-06-14 1999-03-20 문정환 Bottom lead semiconductor package
US5863805A (en) * 1996-07-08 1999-01-26 Industrial Technology Research Institute Method of packaging semiconductor chips based on lead-on-chip (LOC) architecture
US5763945A (en) * 1996-09-13 1998-06-09 Micron Technology, Inc. Integrated circuit package electrical enhancement with improved lead frame design
US5907184A (en) * 1998-03-25 1999-05-25 Micron Technology, Inc. Integrated circuit package electrical enhancement
US6407333B1 (en) 1997-11-04 2002-06-18 Texas Instruments Incorporated Wafer level packaging
KR100242393B1 (en) 1996-11-22 2000-02-01 김영환 Semiconductor package and fabrication method
KR100234708B1 (en) * 1996-12-18 1999-12-15 Hyundai Micro Electronics Co Blp type semiconductor package and mounting structure thereof
US6097098A (en) 1997-02-14 2000-08-01 Micron Technology, Inc. Die interconnections using intermediate connection elements secured to the die face
DE19708617C2 (en) * 1997-03-03 1999-02-04 Siemens Ag Chip card module and method for its production as well as this comprehensive chip card
KR100214561B1 (en) * 1997-03-14 1999-08-02 구본준 Buttom lead package
DE19738588B4 (en) * 1997-09-03 2004-11-25 Infineon Technologies Ag Electrical component with a sheath and with a connection area arranged in the sheath and method for producing such an electrical component
KR100246587B1 (en) * 1997-09-19 2000-03-15 유무성 Ball grid array semiconductor package
KR100253376B1 (en) 1997-12-12 2000-04-15 김영환 Chip size semiconductor package and fabrication method thereof
KR100259359B1 (en) 1998-02-10 2000-06-15 김영환 Substrate for semiconductor device package, semiconductor device package using the same and manufacturing method thereof
US6420779B1 (en) 1999-09-14 2002-07-16 St Assembly Test Services Ltd. Leadframe based chip scale package and method of producing the same
US20020125568A1 (en) * 2000-01-14 2002-09-12 Tongbi Jiang Method Of Fabricating Chip-Scale Packages And Resulting Structures
US6762502B1 (en) * 2000-08-31 2004-07-13 Micron Technology, Inc. Semiconductor device packages including a plurality of layers substantially encapsulating leads thereof
SG105544A1 (en) * 2002-04-19 2004-08-27 Micron Technology Inc Ultrathin leadframe bga circuit package
CN100345296C (en) * 2002-06-18 2007-10-24 矽品精密工业股份有限公司 Multichip semiconductor package with chip carrier having down stretched pin
US6794738B2 (en) 2002-09-23 2004-09-21 Texas Instruments Incorporated Leadframe-to-plastic lock for IC package
US20040124508A1 (en) * 2002-11-27 2004-07-01 United Test And Assembly Test Center Ltd. High performance chip scale leadframe package and method of manufacturing the package
US8129222B2 (en) * 2002-11-27 2012-03-06 United Test And Assembly Test Center Ltd. High density chip scale leadframe package and method of manufacturing the package
US6921860B2 (en) 2003-03-18 2005-07-26 Micron Technology, Inc. Microelectronic component assemblies having exposed contacts
US20060145312A1 (en) * 2005-01-05 2006-07-06 Kai Liu Dual flat non-leaded semiconductor package
US8093694B2 (en) * 2005-02-14 2012-01-10 Stats Chippac Ltd. Method of manufacturing non-leaded integrated circuit package system having etched differential height lead structures
CN100446231C (en) * 2006-01-25 2008-12-24 矽品精密工业股份有限公司 Semiconductor encapsulation structure and its making method
CN100446230C (en) * 2006-01-25 2008-12-24 矽品精密工业股份有限公司 Semiconductor encapsulation structure and its making method
US7489026B2 (en) * 2006-10-31 2009-02-10 Freescale Semiconductor, Inc. Methods and apparatus for a Quad Flat No-Lead (QFN) package
US8035207B2 (en) * 2006-12-30 2011-10-11 Stats Chippac Ltd. Stackable integrated circuit package system with recess
DE102010026312B4 (en) * 2010-07-06 2022-10-20 Phoenix Contact Gmbh & Co. Kg Connection contact and method for producing connection contacts
US8901747B2 (en) 2010-07-29 2014-12-02 Mosys, Inc. Semiconductor chip layout
KR101796116B1 (en) 2010-10-20 2017-11-10 삼성전자 주식회사 Semiconductor device, memory module and memory system having the same and operating method thereof
US9494660B2 (en) 2012-03-20 2016-11-15 Allegro Microsystems, Llc Integrated circuit package having a split lead frame
US10234513B2 (en) 2012-03-20 2019-03-19 Allegro Microsystems, Llc Magnetic field sensor integrated circuit with integral ferromagnetic material
US9666788B2 (en) 2012-03-20 2017-05-30 Allegro Microsystems, Llc Integrated circuit package having a split lead frame
US9812588B2 (en) 2012-03-20 2017-11-07 Allegro Microsystems, Llc Magnetic field sensor integrated circuit with integral ferromagnetic material
US20140027890A1 (en) * 2012-07-27 2014-01-30 Integrated Device Technology Inc. Low Stress Package For an Integrated Circuit
USD729808S1 (en) 2013-03-13 2015-05-19 Nagrastar Llc Smart card interface
US9647997B2 (en) 2013-03-13 2017-05-09 Nagrastar, Llc USB interface for performing transport I/O
USD758372S1 (en) 2013-03-13 2016-06-07 Nagrastar Llc Smart card interface
USD759022S1 (en) 2013-03-13 2016-06-14 Nagrastar Llc Smart card interface
US9888283B2 (en) 2013-03-13 2018-02-06 Nagrastar Llc Systems and methods for performing transport I/O
USD780763S1 (en) 2015-03-20 2017-03-07 Nagrastar Llc Smart card interface
USD864968S1 (en) 2015-04-30 2019-10-29 Echostar Technologies L.L.C. Smart card interface

Citations (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116701A (en) * 1974-07-31 1976-02-10 Kawasaki Heavy Ind Ltd Sagyodaino shokosochi
US3940786A (en) * 1974-02-22 1976-02-24 Amp Incorporated Device for connecting leadless integrated circuit package to a printed circuit board
JPS57176751A (en) * 1981-04-22 1982-10-30 Toshiba Corp Semiconductor device
JPS5811198A (en) 1981-07-15 1983-01-21 共同印刷株式会社 Discriminating card and its manufacture
JPS6015786A (en) 1983-07-06 1985-01-26 Dainippon Printing Co Ltd Ic card and its production
JPS6068488A (en) 1983-06-09 1985-04-19 フロニク、ソシエテ、アノニム Manufacture of memory card
US4532419A (en) * 1982-09-09 1985-07-30 Sony Corporation Memory card having static electricity protection
US4539472A (en) * 1984-01-06 1985-09-03 Horizon Technology, Inc. Data processing card system and method of forming same
JPS60183745A (en) 1984-03-02 1985-09-19 Hitachi Micro Comput Eng Ltd Semiconductor device
JPS60257159A (en) 1984-06-01 1985-12-18 Nec Corp Semiconductor device
JPS61222715A (en) 1985-03-28 1986-10-03 Mitsubishi Electric Corp Manufacture of resin molded body
EP0198194A1 (en) * 1985-04-18 1986-10-22 International Business Machines Corporation Packaged semiconductor chip
JPS622560A (en) 1985-06-27 1987-01-08 Toshiba Corp Resin-sealed type semiconductor device
JPS6276540A (en) 1985-09-30 1987-04-08 Toshiba Corp Semiconductor device
JPS62134944A (en) 1985-12-06 1987-06-18 Nec Corp Semiconductor device
JPS62154769A (en) 1985-12-27 1987-07-09 Hitachi Ltd Semiconductor device
JPS62249464A (en) 1986-04-23 1987-10-30 Hitachi Ltd Semiconductor package
JPS62298146A (en) * 1986-06-18 1987-12-25 Hitachi Micro Comput Eng Ltd Electronic device
US4722765A (en) * 1983-06-22 1988-02-02 Preh Elektrofeinmechanische Werke Jakob Preh Nachf. Gmbh & Co. Process for preparing printed circuits
JPS6367763A (en) 1986-09-09 1988-03-26 Nec Corp Semiconductor device
JPS63151058A (en) * 1986-12-16 1988-06-23 Matsushita Electronics Corp Resin packaged type semiconductor device
JPS63296252A (en) 1987-05-27 1988-12-02 Mitsubishi Electric Corp Resin sealed semiconductor device
JPH01161724A (en) * 1987-12-18 1989-06-26 Citizen Watch Co Ltd Manufacture of semiconductor device to be surface mounted
JPH01189149A (en) 1988-01-25 1989-07-28 Fujitsu Ltd Semiconductor device having lead
JPH0247061A (en) 1988-08-09 1990-02-16 Asahi Insatsu Shiki Kk Additionally printing method on carton
JPH0263142A (en) 1988-08-29 1990-03-02 Fujitsu Ltd Molded package and its manufacture
US4937656A (en) * 1988-04-22 1990-06-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JPH02170456A (en) * 1988-12-22 1990-07-02 Canon Electron Inc Mounting of integrated circuit structure body
JPH02246125A (en) 1989-03-20 1990-10-01 Hitachi Ltd Semiconductor device and manufacture thereof
DE3911711A1 (en) * 1989-04-10 1990-10-11 Ibm MODULE STRUCTURE WITH INTEGRATED SEMICONDUCTOR CHIP AND CHIP CARRIER
JPH02298146A (en) 1989-05-11 1990-12-10 Canon Inc Isdn composite terminal equipment
JPH03131059A (en) * 1989-10-16 1991-06-04 Mitsubishi Electric Corp Semiconductor device
JPH03151058A (en) 1989-11-07 1991-06-27 Ube Ind Ltd Vertical grinding machine
EP0465143A2 (en) * 1990-07-05 1992-01-08 AT&T Corp. Molded hybrid IC package and lead frame therefore
US5107325A (en) * 1989-04-17 1992-04-21 Seiko Epson Corporation Structure and method of packaging a semiconductor device
US5122860A (en) * 1987-08-26 1992-06-16 Matsushita Electric Industrial Co., Ltd. Integrated circuit device and manufacturing method thereof
EP0501830A2 (en) * 1991-02-28 1992-09-02 Texas Instruments Incorporated Insulated lead frame for semiconductor packaged devices
US5157480A (en) * 1991-02-06 1992-10-20 Motorola, Inc. Semiconductor device having dual electrical contact sites
US5166866A (en) * 1991-04-03 1992-11-24 Samsung Electronics Co., Ltd. Semiconductor package
US5172214A (en) * 1991-02-06 1992-12-15 Motorola, Inc. Leadless semiconductor device and method for making the same
US5200362A (en) * 1989-09-06 1993-04-06 Motorola, Inc. Method of attaching conductive traces to an encapsulated semiconductor die using a removable transfer film
JPH05166964A (en) 1991-12-16 1993-07-02 Hitachi Ltd Semiconductor device
US5229846A (en) * 1990-08-10 1993-07-20 Kabushiki Kaisha Toshiba Semiconductor device having noise reducing die pads
US5235207A (en) * 1990-07-20 1993-08-10 Hitachi, Ltd. Semiconductor device
JPH06132453A (en) 1992-10-20 1994-05-13 Fujitsu Ltd Semiconductor device and manufacture thereof
JPH06236956A (en) 1993-02-09 1994-08-23 Hitachi Constr Mach Co Ltd Semiconductor device and its manufacture
US5436500A (en) * 1991-12-24 1995-07-25 Samsung Electronics Co., Ltd. Surface mount semiconductor package
US5474958A (en) * 1993-05-04 1995-12-12 Motorola, Inc. Method for making semiconductor device having no die supporting surface
US5529959A (en) * 1992-06-23 1996-06-25 Sony Corporation Charge-coupled device image sensor
US5583375A (en) * 1990-06-11 1996-12-10 Hitachi, Ltd. Semiconductor device with lead structure within the planar area of the device
US5693573A (en) * 1996-06-14 1997-12-02 Lg Semicon Co., Ltd. Semiconductor package lead deflash method
JP3151058B2 (en) 1992-08-05 2001-04-03 パイオニア株式会社 optical disk

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117562A (en) * 1983-11-29 1985-06-25 Japan Storage Battery Co Ltd Alkali-matrix-type hydrogen-oxygen fuel cell
JPS63258050A (en) * 1987-04-15 1988-10-25 Mitsubishi Electric Corp Semiconductor device

Patent Citations (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3940786A (en) * 1974-02-22 1976-02-24 Amp Incorporated Device for connecting leadless integrated circuit package to a printed circuit board
JPS5116701A (en) * 1974-07-31 1976-02-10 Kawasaki Heavy Ind Ltd Sagyodaino shokosochi
JPS57176751A (en) * 1981-04-22 1982-10-30 Toshiba Corp Semiconductor device
JPS5811198A (en) 1981-07-15 1983-01-21 共同印刷株式会社 Discriminating card and its manufacture
US4532419A (en) * 1982-09-09 1985-07-30 Sony Corporation Memory card having static electricity protection
JPS6068488A (en) 1983-06-09 1985-04-19 フロニク、ソシエテ、アノニム Manufacture of memory card
US4722765A (en) * 1983-06-22 1988-02-02 Preh Elektrofeinmechanische Werke Jakob Preh Nachf. Gmbh & Co. Process for preparing printed circuits
JPS6015786A (en) 1983-07-06 1985-01-26 Dainippon Printing Co Ltd Ic card and its production
US4539472A (en) * 1984-01-06 1985-09-03 Horizon Technology, Inc. Data processing card system and method of forming same
JPS60183745A (en) 1984-03-02 1985-09-19 Hitachi Micro Comput Eng Ltd Semiconductor device
JPS60257159A (en) 1984-06-01 1985-12-18 Nec Corp Semiconductor device
JPS61222715A (en) 1985-03-28 1986-10-03 Mitsubishi Electric Corp Manufacture of resin molded body
EP0198194A1 (en) * 1985-04-18 1986-10-22 International Business Machines Corporation Packaged semiconductor chip
JPS622560A (en) 1985-06-27 1987-01-08 Toshiba Corp Resin-sealed type semiconductor device
JPS6276540A (en) 1985-09-30 1987-04-08 Toshiba Corp Semiconductor device
JPS62134944A (en) 1985-12-06 1987-06-18 Nec Corp Semiconductor device
JPS62154769A (en) 1985-12-27 1987-07-09 Hitachi Ltd Semiconductor device
JPS62249464A (en) 1986-04-23 1987-10-30 Hitachi Ltd Semiconductor package
JPS62298146A (en) * 1986-06-18 1987-12-25 Hitachi Micro Comput Eng Ltd Electronic device
JPS6367763A (en) 1986-09-09 1988-03-26 Nec Corp Semiconductor device
JPS63151058A (en) * 1986-12-16 1988-06-23 Matsushita Electronics Corp Resin packaged type semiconductor device
JPS63296252A (en) 1987-05-27 1988-12-02 Mitsubishi Electric Corp Resin sealed semiconductor device
US5122860A (en) * 1987-08-26 1992-06-16 Matsushita Electric Industrial Co., Ltd. Integrated circuit device and manufacturing method thereof
JPH01161724A (en) * 1987-12-18 1989-06-26 Citizen Watch Co Ltd Manufacture of semiconductor device to be surface mounted
JPH01189149A (en) 1988-01-25 1989-07-28 Fujitsu Ltd Semiconductor device having lead
US4937656A (en) * 1988-04-22 1990-06-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JPH0247061A (en) 1988-08-09 1990-02-16 Asahi Insatsu Shiki Kk Additionally printing method on carton
JPH0263142A (en) 1988-08-29 1990-03-02 Fujitsu Ltd Molded package and its manufacture
JPH02170456A (en) * 1988-12-22 1990-07-02 Canon Electron Inc Mounting of integrated circuit structure body
JPH02246125A (en) 1989-03-20 1990-10-01 Hitachi Ltd Semiconductor device and manufacture thereof
DE3911711A1 (en) * 1989-04-10 1990-10-11 Ibm MODULE STRUCTURE WITH INTEGRATED SEMICONDUCTOR CHIP AND CHIP CARRIER
US5107325A (en) * 1989-04-17 1992-04-21 Seiko Epson Corporation Structure and method of packaging a semiconductor device
JPH02298146A (en) 1989-05-11 1990-12-10 Canon Inc Isdn composite terminal equipment
US5200362A (en) * 1989-09-06 1993-04-06 Motorola, Inc. Method of attaching conductive traces to an encapsulated semiconductor die using a removable transfer film
US5273938A (en) * 1989-09-06 1993-12-28 Motorola, Inc. Method for attaching conductive traces to plural, stacked, encapsulated semiconductor die using a removable transfer film
JPH03131059A (en) * 1989-10-16 1991-06-04 Mitsubishi Electric Corp Semiconductor device
JPH03151058A (en) 1989-11-07 1991-06-27 Ube Ind Ltd Vertical grinding machine
US5583375A (en) * 1990-06-11 1996-12-10 Hitachi, Ltd. Semiconductor device with lead structure within the planar area of the device
EP0465143A2 (en) * 1990-07-05 1992-01-08 AT&T Corp. Molded hybrid IC package and lead frame therefore
US5235207A (en) * 1990-07-20 1993-08-10 Hitachi, Ltd. Semiconductor device
US5229846A (en) * 1990-08-10 1993-07-20 Kabushiki Kaisha Toshiba Semiconductor device having noise reducing die pads
US5157480A (en) * 1991-02-06 1992-10-20 Motorola, Inc. Semiconductor device having dual electrical contact sites
US5172214A (en) * 1991-02-06 1992-12-15 Motorola, Inc. Leadless semiconductor device and method for making the same
EP0501830A2 (en) * 1991-02-28 1992-09-02 Texas Instruments Incorporated Insulated lead frame for semiconductor packaged devices
US5166866A (en) * 1991-04-03 1992-11-24 Samsung Electronics Co., Ltd. Semiconductor package
JPH05166964A (en) 1991-12-16 1993-07-02 Hitachi Ltd Semiconductor device
US5436500A (en) * 1991-12-24 1995-07-25 Samsung Electronics Co., Ltd. Surface mount semiconductor package
US5529959A (en) * 1992-06-23 1996-06-25 Sony Corporation Charge-coupled device image sensor
JP3151058B2 (en) 1992-08-05 2001-04-03 パイオニア株式会社 optical disk
JPH06132453A (en) 1992-10-20 1994-05-13 Fujitsu Ltd Semiconductor device and manufacture thereof
JPH06236956A (en) 1993-02-09 1994-08-23 Hitachi Constr Mach Co Ltd Semiconductor device and its manufacture
US5474958A (en) * 1993-05-04 1995-12-12 Motorola, Inc. Method for making semiconductor device having no die supporting surface
US5693573A (en) * 1996-06-14 1997-12-02 Lg Semicon Co., Ltd. Semiconductor package lead deflash method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Bregman, Mark F. and Kovac, Carolin A.; "Plastic for VLSI-Based Computers"; H.6, S.75-80; In: Solid State Technology, Jun. 1968. *
Goodenough, Frank: "Mixing Gold and Aluminum Bond Wires on Power ICs Cuts Cost and Ups Reliability"; p. 34; In: Electronic Design, 11, H.19, 1990.*

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030116839A1 (en) * 2001-12-24 2003-06-26 Wolfgang Knapp Semiconductor module and method of producing a semiconductor module
US6921969B2 (en) * 2001-12-24 2005-07-26 Abb Research Ltd. Semiconductor module and method of producing a semiconductor module

Also Published As

Publication number Publication date
JPH1093001A (en) 1998-04-10
DE4238646A1 (en) 1993-06-03
JPH0546045U (en) 1993-06-18
USRE36097E (en) 1999-02-16
KR940007757Y1 (en) 1994-10-24
US5363279A (en) 1994-11-08
DE4238646B4 (en) 2006-11-16
KR930012117U (en) 1993-06-25

Similar Documents

Publication Publication Date Title
USRE37413E1 (en) Semiconductor package for a semiconductor chip having centrally located bottom bond pads
US6878570B2 (en) Thin stacked package and manufacturing method thereof
US5471088A (en) Semiconductor package and method for manufacturing the same
US5444301A (en) Semiconductor package and method for manufacturing the same
KR0128251Y1 (en) Lead exposed type semiconductor device
KR100285664B1 (en) Stack package and method for fabricating the same
US7507606B2 (en) Semiconductor device and method of manufacturing the same
US6420779B1 (en) Leadframe based chip scale package and method of producing the same
US7709937B2 (en) Method of manufacturing semiconductor device
US6165819A (en) Semiconductor device, method of producing semiconductor device and semiconductor device mounting structure
US8148200B2 (en) Semiconductor device and manufacturing method of the same
JP2000133767A (en) Laminated semiconductor package and its manufacture
US8659133B2 (en) Etched surface mount islands in a leadframe package
US20130200507A1 (en) Two-sided die in a four-sided leadframe based package
US6084309A (en) Semiconductor device and semiconductor device mounting structure
US8349655B2 (en) Method of fabricating a two-sided die in a four-sided leadframe based package
KR100291511B1 (en) Multi-chip package
JP2001135767A (en) Semiconductor device and method of manufacturing the same
EP4057342A2 (en) A method of manufacturing semiconductor devices and corresponding semiconductor device
KR100321149B1 (en) chip size package
JP2504194B2 (en) Method for manufacturing resin-sealed semiconductor device
KR100537893B1 (en) Leadframe and multichip package using the same
JPH0927583A (en) Semiconductor integrated circuit device and its manufacture
KR0147157B1 (en) "t" type high integrated semiconductor package
KR950010866B1 (en) Surface mounting type semiconductor package

Legal Events

Date Code Title Description
AS Assignment

Owner name: HYUNDAI ELECTRONICS INDUSTRIES CO., LTD., KOREA, R

Free format text: MERGER;ASSIGNOR:HYUNDAI MICROELECTRONICS CO., LTD.;REEL/FRAME:011179/0270

Effective date: 19991014

AS Assignment

Owner name: HYUNDAI MICROELECTRONICS CO., LTD., KOREA, REPUBLI

Free format text: CHANGE OF NAME;ASSIGNOR:LG SEMICON CO., LTD.;REEL/FRAME:011176/0024

Effective date: 19990802

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12