USRE42849E1 - Lithographic apparatus and device manufacturing method - Google Patents

Lithographic apparatus and device manufacturing method Download PDF

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Publication number
USRE42849E1
USRE42849E1 US12/153,717 US15371708A USRE42849E US RE42849 E1 USRE42849 E1 US RE42849E1 US 15371708 A US15371708 A US 15371708A US RE42849 E USRE42849 E US RE42849E
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substrate
immersion liquid
space
liquid
electrical potential
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Paulus Cornelis Duineveld
Peter Dirksen
Aleksey Yurievich Kolesnychenko
Helmar Van Santen
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ASML Netherlands BV
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus

Definitions

  • the present invention relates to a lithographic apparatus and a device manufacturing method.
  • a lithographic apparatus is a machine that applies a desired pattern onto a target portion of a substrate.
  • Lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs).
  • a patterning structure such as a mask, may be used to generate a circuit pattern corresponding to an individual layer of the IC, and this pattern can be imaged onto a target portion (e.g. including part of one or several dies) on a substrate (e.g. a silicon wafer) that has a layer of radiation-sensitive material (resist).
  • a single substrate will contain a network of adjacent target portions that are successively exposed.
  • lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion in one go, and so-called scanners, in which each target portion is irradiated by scanning the pattern through the projection beam in a given direction (the “scanning” direction) while synchronously scanning the substrate parallel or anti-parallel to this direction.
  • liquid supply system to provide liquid on only a localized area of the substrate and in between the final element of the projection system and the substrate using a liquid confinement system (the substrate generally has a larger surface area than the final element of the projection system).
  • a liquid confinement system the substrate generally has a larger surface area than the final element of the projection system.
  • liquid is supplied by at least one inlet IN onto the substrate W, preferably along the direction of movement of the substrate relative to the final element, and is removed by at least one outlet OUT after having passed under the projection system PL. That is, as the substrate is scanned beneath the final element in a ⁇ X direction, liquid is supplied at the +X side of the final element and taken up at the ⁇ X side.
  • FIG. 2 shows the arrangement schematically in which liquid is supplied via inlet IN and is taken up on the other side of the element by outlet OUT which is connected to a low pressure source.
  • the liquid is supplied along the direction of movement of the substrate relative to the final element, though this does not need to be the case.
  • FIG. 3 shows the arrangement schematically in which liquid is supplied via inlet IN and is taken up on the other side of the element by outlet OUT which is connected to a low pressure source.
  • the liquid is supplied along the direction of movement of the substrate relative to the final element, though this does not need to be the case.
  • FIG. 3 shows the arrangement schematically in which liquid is supplied via inlet IN and is taken up on the other side of the element by outlet OUT which is connected to a low pressure source.
  • the liquid is supplied along the direction of movement of the substrate relative to the final element, though this does not need to be the case.
  • FIG. 3 shows the arrangement schematically in which liquid is supplied via inlet IN and is taken up on the other side of the element by outlet OUT
  • Another solution which has been proposed is to provide the liquid supply system with a seal member which extends along at least a part of a boundary of the space between the final element of the projection system and the substrate table.
  • the seal member is substantially stationary relative to the projection system in the XY plane though there may be some relative movement in the Z direction (in the direction of the optical axis).
  • a seal is formed between the seal member and the surface of the substrate.
  • the seal is a contactless seal such as a gas seal.
  • seal members are clearly possible including those with different arrangements of inlets and outlets and also those which are asymmetric.
  • a difficulty in immersion lithography has been found to be the existence of bubbles in the immersion liquid. These bubbles can be of any size, but bubbles of the order of a few ⁇ m have presented a particular problem. This is especially the case when the ⁇ m bubbles lie on the surface of the substrate or a sensor which is to be imaged because in this position the bubbles have a maximum disturbing influence on the projection beam.
  • a lithographic apparatus including an illumination system configured to provide projection beam of radiation; a support configured to support a patterning structure, the patterning structure configured to impart the projection beam with a pattern in its cross-section; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; a liquid supply system configured to at least partly fill a space between a final element of the projection system and the substrate with an immersion liquid; and a power source configured to apply a first electrical potential to a first object effective to move bubbles and/or particles in the immersion liquid.
  • the first object forms a border of the space so that the positions of the bubbles in the immersion liquid in the space can be controlled.
  • the first object can be in contact with the immersion liquid in a supply channel upstream of the space. In this way it is possible to avoid the generation of excessive electrical potential fields in the space which might be deleterious to sensors in the space or might be difficult to arrange for because of the limited space for objects under the projection system.
  • the force on the bubbles may be increased as the first electrical potential could be made effective to repel the bubbles whilst the second electrical potential could be made effective to attract the bubbles, or vice versa.
  • the substrate can be made to be the first object so that bubbles can be repelled from the substrate itself.
  • the second object can be the final element of the projection system so that bubbles can be attracted towards that and thereby away from the substrate.
  • the first and second objects may be the other way round.
  • the first object still forms a border of the space but is positioned distal from the optical axis of the apparatus. In this way bubbles can be moved away from the optical axis of the apparatus so that the liquid through which imaging is actually taking place is substantially free of bubbles.
  • a device manufacturing method including projecting a patterned beam of radiation onto a target portion of a substrate using a projection system; providing an immersion liquid between a final element of the projection system and the substrate; and applying a force on bubbles in the immersion liquid by applying a charge to an object in contact with the immersion liquid.
  • any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively.
  • the substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist) or a metrology or inspection tool.
  • the disclosure herein may be applied to such and other substrate processing tools.
  • the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
  • UV radiation e.g. having a wavelength of 365, 248, 193, 157 or 126 nm.
  • patterning structure used herein should be broadly interpreted as referring to a structure that can be used to impart a projection beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the projection beam may not exactly correspond to the desired pattern in the target portion of the substrate. Generally, the pattern imparted to the projection beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
  • Patterning structures may be transmissive or reflective.
  • Examples of patterning structures include masks, programmable mirror arrays, and programmable LCD panels.
  • Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types.
  • An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. In this manner, the reflected beam is patterned.
  • the support structure may be a frame or table, for example, which may be fixed or movable as required and which may ensure that the patterning structure is at a desired position, for example with respect to the projection system. Any use of the terms, “reticle” or “mask” herein may be considered synonymous with the more general term “patterning structure”.
  • projection system used herein should be broadly interpreted as encompassing various types of projection system, including refractive optical systems, reflective optical systems, and catadioptric optical systems, as appropriate for example for the exposure radiation being used, or for other factors such as the use of an immersion fluid or the use of a vacuum. Any use of the term “lens” herein may be considered as synonymous with the more general term “projection system”.
  • the illumination system may also encompass various types of optical components, including refractive, reflective, and catadioptric optical components for directing, shaping, or controlling the projection beam of radiation, and such components may also be referred to below, collectively or singularly, as a “lens”.
  • the lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
  • FIG. 1 depicts a lithographic apparatus according to an embodiment of the invention
  • FIG. 2 illustrates, in cross-section, a liquid supply system
  • FIG. 3 illustrates the liquid supply system of FIG. 2 ;
  • FIG. 4 illustrates an embodiment of the present invention
  • FIG. 5 illustrates another embodiment of the present invention.
  • FIG. 1 schematically depicts a lithographic apparatus according to a particular embodiment of the invention.
  • the apparatus includes an illumination system (illuminator) IL for providing a projection beam PB of radiation (e.g. UV radiation).
  • a first support structure (e.g. a mask table) MT is configured to support a patterning structure (e.g. a mask) MA and is connected to a first positioning device PM that accurately positions the patterning structure with respect to a projection system.
  • a substrate table (e.g. a wafer table) WT is configured to hold a substrate (e.g. a resist-coated wafer) W and is connected to a second positioning device PW that accurately positions the substrate with respect to the projection system.
  • the projection system (e.g. a refractive projection lens) PL images a pattern imparted to the projection beam PB by the patterning structure MA onto a target portion C (e.g. including one or more dies) of the substrate W.
  • the apparatus is of a transmissive type (e.g. employing a transmissive mask).
  • the apparatus may be of a reflective type (e.g. employing a programmable mirror array of a type as referred to above).
  • the illuminator IL receives a beam of radiation from a radiation source LA.
  • the source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to form part of the lithographic apparatus and the radiation beam is passed from the source LA to the illuminator IL with the aid of a beam delivery system Ex including, for example, suitable directing mirrors and/or a beam expander. In other cases, the source may be an integral part of the apparatus, for example when the source is a mercury lamp.
  • the source LA and the illuminator IL, together with the beam delivery system Ex if required, may be referred to as a radiation system.
  • the illuminator IL may include an adjusting device AM to adjust the angular intensity distribution of the beam.
  • an adjusting device AM to adjust the angular intensity distribution of the beam.
  • the illuminator IL generally includes various other components, such as an integrator IN and a condenser CO.
  • the illuminator provides a conditioned beam of radiation, referred to as the projection beam PB, having a desired uniformity and intensity distribution in its cross-section.
  • the projection beam PB is incident on the mask MA, which is held on the mask table MT. Having traversed the mask MA, the projection beam PB passes through the lens PL, which focuses the beam onto a target portion C of the substrate W.
  • the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the beam PB.
  • the first positioning device PM and another position sensor can be used to accurately position the mask MA with respect to the path of the beam PB, e.g. after mechanical retrieval from a mask library, or during a scan.
  • the mask table MT may be connected to a short stroke actuator only, or may be fixed.
  • Mask MA and substrate W may be aligned using mask alignment marks M 1 , M 2 and substrate alignment marks P 1 , P 2 .
  • the present invention is applicable to any type of liquid supply system.
  • the supply system may be configured to supply any type of immersion liquid and may use any type of system for confining the immersion liquid between the projection system PL and the substrate W.
  • FIG. 4 illustrates one type of liquid confinement system according to the present invention.
  • the present invention could be applied to the liquid supply system of FIGS. 2 and 3 .
  • the liquid supply system of FIG. 4 includes a barrier member 10 positioned below and surrounding the final element 20 of the projection system PL.
  • the liquid is brought into the space 5 below the projection system and within the barrier member 10 .
  • the barrier member 10 preferably extends a little above the final element of the projection system PL.
  • a seal may be provided between the bottom of the barrier member 10 and the substrate W. This seal may, for example, be a gas seal or a hydrostatic seal.
  • the barrier member 10 may be supported by the projection system PL or the base frame of the apparatus or in any other way including supporting its own weight on the substrate W.
  • Immersion liquid is supplied to the space between the projection system PL and the substrate W through a conduit 30 .
  • the immersion liquid is then removed from the space. This removal of liquid is not illustrated but may be in any way, for example by a low pressure source.
  • Micro bubbles and small particles can be present in the immersion liquid and, if these are close to the surface of the substrate W during imaging, can deleteriously effect the quality of the projected image and the resulting product.
  • the present invention addresses this issue drawing on the discovery made by the mining industry that small solid particles adhere to bubble surfaces in a liquid. It was found that electrical forces between micron size bubbles and the solid particles play an important role in the adhesion. It was found that bubbles in a liquid have, on their surface, an electrokinetic (or zeta) potential which results in a potential difference between the surface of the bubble and the fully disassociated ionic concentration in the body of the liquid. This also applies to small particles.
  • a power source or voltage supply V (or charge, voltage, electrical field or potential difference generator or supply) is used to apply an electrical potential to one or more objects of the immersion apparatus.
  • V or charge, voltage, electrical field or potential difference generator or supply
  • the principle of operation is that if repulsion is required a potential difference between the fully disassociated ionic concentration of the liquid and the object is generated, which is of the same polarity as the potential difference between the fully disassociated ionic concentration in the body of the liquid and the surface of the bubble. If attraction between the object and the bubble is required the potential differences should have opposite polarity. In this way forces can be generated on the bubbles towards or away from the objects (e.g. electrodes) which are in contact with the immersion liquid.
  • objects e.g. electrodes
  • FIG. 4 several different objects have a potential or charge applied to them.
  • the present invention will work with only one such object and also with any combination of objects, and indeed other objects not illustrated could be also or alternatively used.
  • FIG. 4 six different objects are illustrated to which a potential or voltage or charge could be applied.
  • the objects are in contact with the immersion liquid, though in principle this is not necessary.
  • One of these objects is the substrate W which is preferably charged to the same polarity of electrical potential as the electrical potential of the surface of the bubbles. In this way the bubbles have a force on them directly away from the substrate W so that their effect on the projected image is minimized.
  • the final element of the projection system or an object close to the final element 20 of the projection system PL can be charged to a potential opposite in polarity to the potential of the surface of the bubbles.
  • the shape of the object (e.g., electrode) close to the final element 20 of a projection system PL could be any shape. It could be plate-like or annular so that the projection beam PB passes through the center of the object.
  • the objects to be charged or have a voltage applied to them could be attached to a surface of the barrier member 10 .
  • these objects are attached to the inner surface of the barrier member 10 .
  • two electrodes 12 , 14 are present each on opposite sides of the barrier member and charged to opposite potentials. In this way the bubbles could be drawn to one or other of the electrodes 12 , 14 , perhaps in the direction of an immersion liquid outlet.
  • one object or more objects may be provided around the inner side of the seal member 10 (in contact with the immersion liquid) which is/are charged to a potential with a polarity different to the polarity of the potential of the surface of the bubbles.
  • Another place to use the present invention is upstream of the space 5 between the final element 20 of the projection system PL and the substrate W in the liquid supply system.
  • oppositely charged and opposing plates (e.g., electrodes) 42 , 44 produce a force on the bubbles which is effective to move the bubbles, when the immersion liquid is in the space 5 , further away from the substrate W than they would be without the application of the electrical field upstream of the space 5 .
  • the immersion liquid with a high concentration of bubbles, i.e. near the electrode 44 could even be removed and not supplied to the space 5 .
  • the removed liquid could be subjected to a bubble removal process before being recycled in the liquid supply system.
  • the potential on the objects should not be so high as to cause disassociation of the immersion liquid but should be high enough to provide a force on the bubbles such that the present invention is effective.
  • typical potential differences applied to the objects are 5 mV to 5V, preferably 10 mV to 500 mV.
  • An electrical field of 5 mV/mm to 500 mV/mm due to the application of the potential is preferred.
  • a second power source/voltage supply/charge/voltage/electrical field or potential difference generator or supply V 2 is provided.
  • the second power source V 2 supplies or generates a second electrical potential that is opposite in polarity to the electrical potential supplied or generated by the power source V.
  • the second electrical potential may be of the same polarity as the electrokinetic potential of a surface of the bubbles and/or particles in the immersion liquid.
  • the power source V is shown as applying the electrical potential to objects 12 , 20 , 42 , 44 and the second power source V 2 is shown as applying the second electrical potential to objects W, 14 , it should be appreciated that the first and second power sources V, V 2 may apply the electrical potentials to the objects in any combination.

Abstract

An immersion lithographic apparatus includes a voltage generator or power source that applies a potential difference to an object in contact with the immersion liquid such that bubbles and/or particles in the immersion liquid are either attracted or repelled from that object due to the electrokinetic potential of the surface of the bubble in the immersion liquid.

Description

More than one reissue application has been filed for the reissue of Pat. No. 7,050,146. The reissue applications are continuation reissue application No. 13/214,955 and parent reissue application No. 12/153,717 (the present application), all of which are reissue applications of Pat. No. 7,050,146.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a lithographic apparatus and a device manufacturing method.
2. Description of the Related Art
A lithographic apparatus is a machine that applies a desired pattern onto a target portion of a substrate. Lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that circumstance, a patterning structure, such as a mask, may be used to generate a circuit pattern corresponding to an individual layer of the IC, and this pattern can be imaged onto a target portion (e.g. including part of one or several dies) on a substrate (e.g. a silicon wafer) that has a layer of radiation-sensitive material (resist). In general, a single substrate will contain a network of adjacent target portions that are successively exposed. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion in one go, and so-called scanners, in which each target portion is irradiated by scanning the pattern through the projection beam in a given direction (the “scanning” direction) while synchronously scanning the substrate parallel or anti-parallel to this direction.
It has been proposed to immerse the substrate in the lithographic projection apparatus in a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the final element of the projection system and the substrate. This enables imaging of smaller features because the exposure radiation will have a shorter wavelength in the liquid. (The effect of the liquid may also be regarded as increasing the effective NA of the system and also increasing the depth of focus.)
However, submersing the substrate or substrate and substrate table in a bath of liquid (see, for example, U.S. Pat. No. 4,509,852) means that there is a large body of liquid that must be accelerated during a scanning exposure. This requires additional or more powerful motors and turbulence in the liquid may lead to undesirable and unpredictable effects.
One of the solutions proposed is for a liquid supply system to provide liquid on only a localized area of the substrate and in between the final element of the projection system and the substrate using a liquid confinement system (the substrate generally has a larger surface area than the final element of the projection system). One way which has been proposed to arrange for this is disclosed in WO 99/49504. As illustrated in FIGS. 2 and 3, liquid is supplied by at least one inlet IN onto the substrate W, preferably along the direction of movement of the substrate relative to the final element, and is removed by at least one outlet OUT after having passed under the projection system PL. That is, as the substrate is scanned beneath the final element in a −X direction, liquid is supplied at the +X side of the final element and taken up at the −X side. FIG. 2 shows the arrangement schematically in which liquid is supplied via inlet IN and is taken up on the other side of the element by outlet OUT which is connected to a low pressure source. In the illustration of FIG. 2, the liquid is supplied along the direction of movement of the substrate relative to the final element, though this does not need to be the case. Various orientations and numbers of in- and out-lets positioned around the final element are possible. One example is illustrated in FIG. 3 in which four sets of an inlet with an outlet on either side are provided in a regular pattern around the final element.
Another solution which has been proposed is to provide the liquid supply system with a seal member which extends along at least a part of a boundary of the space between the final element of the projection system and the substrate table. The seal member is substantially stationary relative to the projection system in the XY plane though there may be some relative movement in the Z direction (in the direction of the optical axis). A seal is formed between the seal member and the surface of the substrate. Preferably the seal is a contactless seal such as a gas seal. Such a system is disclosed in European Patent Application No. 03252955.4 hereby incorporated in its entirety by reference.
Other types of seal members are clearly possible including those with different arrangements of inlets and outlets and also those which are asymmetric.
A difficulty in immersion lithography has been found to be the existence of bubbles in the immersion liquid. These bubbles can be of any size, but bubbles of the order of a few μm have presented a particular problem. This is especially the case when the μm bubbles lie on the surface of the substrate or a sensor which is to be imaged because in this position the bubbles have a maximum disturbing influence on the projection beam.
SUMMARY OF THE INVENTION
It is an aspect of the present invention to reduce the effect of bubbles in immersion liquid on the imaging quality in immersion lithography.
According to an aspect of the present invention, there is provided a lithographic apparatus including an illumination system configured to provide projection beam of radiation; a support configured to support a patterning structure, the patterning structure configured to impart the projection beam with a pattern in its cross-section; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; a liquid supply system configured to at least partly fill a space between a final element of the projection system and the substrate with an immersion liquid; and a power source configured to apply a first electrical potential to a first object effective to move bubbles and/or particles in the immersion liquid.
In this way, it is possible to apply a force on bubbles in the immersion liquid in a direction either towards or away from the first object. This is because bubbles in the immersion liquid will have a natural electrokinetic potential which is a potential difference between the surface of the bubble and the fully dissociated ionic concentration in the body of the liquid. Thus, by choosing the first electrical potential to be either the same or opposite polarity to the electrokinetic potential of the bubble it can be determined whether the bubble moves towards or away from the first object. Thus, this system can be used to move bubbles in the immersion liquid to places where their effect on the imaging quality of the apparatus is minimized. The present invention works in the same way on small particles as it does on bubbles.
Preferably, the first object forms a border of the space so that the positions of the bubbles in the immersion liquid in the space can be controlled. Alternatively, the first object can be in contact with the immersion liquid in a supply channel upstream of the space. In this way it is possible to avoid the generation of excessive electrical potential fields in the space which might be deleterious to sensors in the space or might be difficult to arrange for because of the limited space for objects under the projection system.
It is desirable to have a second power source or voltage to apply a second electrical potential to a second object in contact with the immersion liquid. In this way, the force on the bubbles may be increased as the first electrical potential could be made effective to repel the bubbles whilst the second electrical potential could be made effective to attract the bubbles, or vice versa.
In one embodiment, the substrate can be made to be the first object so that bubbles can be repelled from the substrate itself. In another embodiment, the second object can be the final element of the projection system so that bubbles can be attracted towards that and thereby away from the substrate. The first and second objects may be the other way round.
In another embodiment, the first object still forms a border of the space but is positioned distal from the optical axis of the apparatus. In this way bubbles can be moved away from the optical axis of the apparatus so that the liquid through which imaging is actually taking place is substantially free of bubbles.
According to a further aspect of the present invention, there is provided a device manufacturing method including projecting a patterned beam of radiation onto a target portion of a substrate using a projection system; providing an immersion liquid between a final element of the projection system and the substrate; and applying a force on bubbles in the immersion liquid by applying a charge to an object in contact with the immersion liquid.
Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, liquid-crystal displays (LCDs), thin-film magnetic heads, etc. One of ordinary skill will appreciate that, in the context of such alternative applications, any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively. The substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist) or a metrology or inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
The terms “radiation” and “beam” used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g. having a wavelength of 365, 248, 193, 157 or 126 nm).
The term “patterning structure” used herein should be broadly interpreted as referring to a structure that can be used to impart a projection beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the projection beam may not exactly correspond to the desired pattern in the target portion of the substrate. Generally, the pattern imparted to the projection beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
Patterning structures may be transmissive or reflective. Examples of patterning structures include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. In this manner, the reflected beam is patterned. In each example of a patterning structure, the support structure may be a frame or table, for example, which may be fixed or movable as required and which may ensure that the patterning structure is at a desired position, for example with respect to the projection system. Any use of the terms, “reticle” or “mask” herein may be considered synonymous with the more general term “patterning structure”.
The term “projection system” used herein should be broadly interpreted as encompassing various types of projection system, including refractive optical systems, reflective optical systems, and catadioptric optical systems, as appropriate for example for the exposure radiation being used, or for other factors such as the use of an immersion fluid or the use of a vacuum. Any use of the term “lens” herein may be considered as synonymous with the more general term “projection system”.
The illumination system may also encompass various types of optical components, including refractive, reflective, and catadioptric optical components for directing, shaping, or controlling the projection beam of radiation, and such components may also be referred to below, collectively or singularly, as a “lens”.
The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
BRIEF DESCRIPTION OF THE DRAWINGS
Embodiments of the present invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:
FIG. 1 depicts a lithographic apparatus according to an embodiment of the invention;
FIG. 2 illustrates, in cross-section, a liquid supply system;
FIG. 3 illustrates the liquid supply system of FIG. 2;
FIG. 4 illustrates an embodiment of the present invention; and
FIG. 5 illustrates another embodiment of the present invention.
DETAILED DESCRIPTION
FIG. 1 schematically depicts a lithographic apparatus according to a particular embodiment of the invention. The apparatus includes an illumination system (illuminator) IL for providing a projection beam PB of radiation (e.g. UV radiation). A first support structure (e.g. a mask table) MT is configured to support a patterning structure (e.g. a mask) MA and is connected to a first positioning device PM that accurately positions the patterning structure with respect to a projection system. A substrate table (e.g. a wafer table) WT is configured to hold a substrate (e.g. a resist-coated wafer) W and is connected to a second positioning device PW that accurately positions the substrate with respect to the projection system. The projection system (e.g. a refractive projection lens) PL images a pattern imparted to the projection beam PB by the patterning structure MA onto a target portion C (e.g. including one or more dies) of the substrate W.
As here depicted, the apparatus is of a transmissive type (e.g. employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g. employing a programmable mirror array of a type as referred to above).
The illuminator IL receives a beam of radiation from a radiation source LA. The source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to form part of the lithographic apparatus and the radiation beam is passed from the source LA to the illuminator IL with the aid of a beam delivery system Ex including, for example, suitable directing mirrors and/or a beam expander. In other cases, the source may be an integral part of the apparatus, for example when the source is a mercury lamp. The source LA and the illuminator IL, together with the beam delivery system Ex if required, may be referred to as a radiation system.
The illuminator IL may include an adjusting device AM to adjust the angular intensity distribution of the beam. Generally, at least the outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illuminator IL generally includes various other components, such as an integrator IN and a condenser CO. The illuminator provides a conditioned beam of radiation, referred to as the projection beam PB, having a desired uniformity and intensity distribution in its cross-section.
The projection beam PB is incident on the mask MA, which is held on the mask table MT. Having traversed the mask MA, the projection beam PB passes through the lens PL, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioning device PW and a position sensor IF (e.g. an interferometric device), the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the beam PB. Similarly, the first positioning device PM and another position sensor (which is not explicitly depicted in FIG. 1) can be used to accurately position the mask MA with respect to the path of the beam PB, e.g. after mechanical retrieval from a mask library, or during a scan. In general, movement of the object tables MT and WT will be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the positioning devices PM and PW. However, in the case of a stepper (as opposed to a scanner) the mask table MT may be connected to a short stroke actuator only, or may be fixed. Mask MA and substrate W may be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2.
The depicted apparatus can be used in the following preferred modes:
  • 1. In step mode, the mask table MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the projection beam is projected onto a target portion C in a single “flash” (i.e. a single static exposure). The substrate table WT is then shifted in the X and/or Y direction so that a different target portion C can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure.
  • 2. In scan mode, the mask table MT and the substrate table WT are scanned synchronously while a pattern imparted to the projection beam is projected onto a target portion C (i.e. a single dynamic exposure). The velocity and direction of the substrate table WT relative to the mask table MT is determined by the (de-)magnification and image reversal characteristics of the projection system PL. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) of the target portion in a single dynamic exposure, whereas the length of the scanning motion determines the height (in the scanning direction) of the target portion.
  • 3. In another mode, the mask table MT is kept essentially stationary holding a programmable patterning structure, and the substrate table WT is moved or scanned while a pattern imparted to the projection beam is projected onto a target portion C. In this mode, generally a pulsed radiation source is employed and the programmable patterning structure is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning structures, such as a programmable mirror array of a type as referred to above.
Combinations and/or variations on the above described modes of use or entirely different modes of use may also be employed.
The present invention is applicable to any type of liquid supply system. The supply system may be configured to supply any type of immersion liquid and may use any type of system for confining the immersion liquid between the projection system PL and the substrate W.
FIG. 4 illustrates one type of liquid confinement system according to the present invention. The present invention could be applied to the liquid supply system of FIGS. 2 and 3.
The liquid supply system of FIG. 4 includes a barrier member 10 positioned below and surrounding the final element 20 of the projection system PL. The liquid is brought into the space 5 below the projection system and within the barrier member 10. The barrier member 10 preferably extends a little above the final element of the projection system PL. Optionally, a seal may be provided between the bottom of the barrier member 10 and the substrate W. This seal may, for example, be a gas seal or a hydrostatic seal. The barrier member 10 may be supported by the projection system PL or the base frame of the apparatus or in any other way including supporting its own weight on the substrate W.
Immersion liquid is supplied to the space between the projection system PL and the substrate W through a conduit 30. The immersion liquid is then removed from the space. This removal of liquid is not illustrated but may be in any way, for example by a low pressure source.
Micro bubbles and small particles can be present in the immersion liquid and, if these are close to the surface of the substrate W during imaging, can deleteriously effect the quality of the projected image and the resulting product. The present invention addresses this issue drawing on the discovery made by the mining industry that small solid particles adhere to bubble surfaces in a liquid. It was found that electrical forces between micron size bubbles and the solid particles play an important role in the adhesion. It was found that bubbles in a liquid have, on their surface, an electrokinetic (or zeta) potential which results in a potential difference between the surface of the bubble and the fully disassociated ionic concentration in the body of the liquid. This also applies to small particles.
In the present invention, a power source or voltage supply V (or charge, voltage, electrical field or potential difference generator or supply) is used to apply an electrical potential to one or more objects of the immersion apparatus. The principle of operation is that if repulsion is required a potential difference between the fully disassociated ionic concentration of the liquid and the object is generated, which is of the same polarity as the potential difference between the fully disassociated ionic concentration in the body of the liquid and the surface of the bubble. If attraction between the object and the bubble is required the potential differences should have opposite polarity. In this way forces can be generated on the bubbles towards or away from the objects (e.g. electrodes) which are in contact with the immersion liquid.
In FIG. 4 several different objects have a potential or charge applied to them. The present invention will work with only one such object and also with any combination of objects, and indeed other objects not illustrated could be also or alternatively used.
In pure water, which is a candidate for use as an immersion liquid at 193 nm projection beam wavelength, it has been found that the surface potential of μm bubbles is about −50 mV. This potential will vary with bubble size and also with type of immersion liquid. However, the same principles as described here can be used for other immersion liquids and bubble sizes and the invention is fully applicable to those. Additives may be added to the immersion liquid to change the effect of the surface potential. CaCl2 and NaCl are suitable additives for this purpose.
In FIG. 4, six different objects are illustrated to which a potential or voltage or charge could be applied. Preferably the objects are in contact with the immersion liquid, though in principle this is not necessary. One of these objects is the substrate W which is preferably charged to the same polarity of electrical potential as the electrical potential of the surface of the bubbles. In this way the bubbles have a force on them directly away from the substrate W so that their effect on the projected image is minimized. In combination with a negative potential on the substrate W, or by itself, the final element of the projection system or an object close to the final element 20 of the projection system PL can be charged to a potential opposite in polarity to the potential of the surface of the bubbles. This will have the effect of attracting the bubbles towards the final element 20 of the projection system PL and thereby away from the substrate W. The shape of the object (e.g., electrode) close to the final element 20 of a projection system PL could be any shape. It could be plate-like or annular so that the projection beam PB passes through the center of the object.
Alternatively, the objects to be charged or have a voltage applied to them could be attached to a surface of the barrier member 10. In FIG. 4, these objects are attached to the inner surface of the barrier member 10. As illustrated, two electrodes 12, 14 are present each on opposite sides of the barrier member and charged to opposite potentials. In this way the bubbles could be drawn to one or other of the electrodes 12, 14, perhaps in the direction of an immersion liquid outlet. Alternatively, one object or more objects may be provided around the inner side of the seal member 10 (in contact with the immersion liquid) which is/are charged to a potential with a polarity different to the polarity of the potential of the surface of the bubbles. In this way bubbles in the immersion liquid in the space 5 between the final element 20 of the projection system PL and the substrate W will be drawn away from the optical axis of the apparatus thereby leaving the path of the projection beam PB to the substrate W substantially unhindered by bubbles.
Another place to use the present invention is upstream of the space 5 between the final element 20 of the projection system PL and the substrate W in the liquid supply system. In this case, as the immersion liquid passes along conduits 30 and through a housing 40, oppositely charged and opposing plates (e.g., electrodes) 42, 44 produce a force on the bubbles which is effective to move the bubbles, when the immersion liquid is in the space 5, further away from the substrate W than they would be without the application of the electrical field upstream of the space 5. The immersion liquid with a high concentration of bubbles, i.e. near the electrode 44, could even be removed and not supplied to the space 5. The removed liquid could be subjected to a bubble removal process before being recycled in the liquid supply system.
In all of the above examples, the higher the voltage applied by the voltage generator V the greater the force on the bubbles. The potential on the objects should not be so high as to cause disassociation of the immersion liquid but should be high enough to provide a force on the bubbles such that the present invention is effective. For an immersion liquid comprised mainly of water, typical potential differences applied to the objects are 5 mV to 5V, preferably 10 mV to 500 mV. An electrical field of 5 mV/mm to 500 mV/mm due to the application of the potential is preferred.
In FIG. 5, a second power source/voltage supply/charge/voltage/electrical field or potential difference generator or supply V2 is provided. The second power source V2 supplies or generates a second electrical potential that is opposite in polarity to the electrical potential supplied or generated by the power source V. The second electrical potential may be of the same polarity as the electrokinetic potential of a surface of the bubbles and/or particles in the immersion liquid. Although the power source V is shown as applying the electrical potential to objects 12, 20, 42, 44 and the second power source V2 is shown as applying the second electrical potential to objects W, 14, it should be appreciated that the first and second power sources V, V2 may apply the electrical potentials to the objects in any combination.
While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. The description is not intended to limit the invention.

Claims (45)

1. A lithographic apparatus, comprising:
an illumination system configured to provide a projection beam of radiation;
a support configured to support a patterning structure which is configured to impart the projection beam with a pattern in its cross-section;
a substrate table configured to hold a substrate;
a projection system configured to project the patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid; and
a power source configured to apply a first electrical potential across the immersion liquid supplied by the liquid supply system to move at least one of bubbles and particles, when in the space, in the immersion liquid.
2. An apparatus according to claim 1, wherein the first electrical potential is applied to a first object.
3. An apparatus according to claim 2, wherein the first object is in contact with the immersion liquid.
4. An apparatus according to claim 2, wherein the first object forms a border of the space.
5. An apparatus according to claim 2, wherein the first object is in contact with the immersion liquid in a supply channel upstream of the space.
6. An apparatus according to claim 2, wherein the first object is the substrate.
7. An apparatus according to claim 2, wherein the first object lies in the optical axis of the apparatus.
8. An apparatus according to claim 2, wherein the first object fonns forms a border of the space and is positioned distal from the optical axis of the apparatus.
9. An apparatus according to claim 2, wherein the first object is positioned on a barrier member which extends along at least a part of a boundary of the space.
10. An apparatus according to claim 1, wherein the first electrical potential is applied across the immersion liquid in the space.
11. An apparatus according to claim 1, wherein the first electrical potential is applied across the immersion liquid outside the space.
12. An apparatus according to claim 11, wherein the first electrical potential is applied across the immersion liquid in the liquid supply system.
13. An apparatus according to claim 1, wherein the first electrical potential is effective to exert a force on at least one of bubbles and particles in the immersion liquid in a direction away from the substrate.
14. An apparatus according to claim 1, further comprising a second power source configured to apply a second electrical potential across the immersion liquid.
15. An apparatus according to claim 14, wherein the second electrical potential is opposite in polarity to the first electrical potential.
16. An apparatus according to claim 14, wherein the second electrical potential is of the same polarity as an electrokinetic potential of a surface of at least one of bubbles and particles in the immersion liquid.
17. An apparatus according to claim 14, wherein the second electrical potential is applied across the immersion liquid in the space.
18. An apparatus according to claim 14, wherein the second electrical potential is applied across the immersion fluid outside the space.
19. An apparatus according to claim 14, wherein the second electrical potential is applied to a second object.
20. An apparatus according to claim 19, wherein the second object forms a border of the space.
21. An apparatus according to claim 19, wherein the second object is in contact with the immersion liquid in a supply channel upstream of the space.
22. An apparatus according to claim 19, wherein the second object is a final element of the projection system.
23. An apparatus according to claim 1, wherein the first electrical potential is effective to exert a force on at least one of bubbles and particles in the immersion liquid in a direction such that when in the space, the at least one of bubbles and particles will be further from the substrate than if no electrical potential was applied across the immersion liquid.
24. An apparatus according to claim 1, wherein the first electrical potential is between ±5 mV and ±5V.
25. An apparatus according to claim 1, wherein the first electrical potential is between 10 mV and 500 mV.
26. An apparatus according to claim 1, wherein the first electrical potential is effective to set up an electrical field of up to 500 mV/mm.
27. An apparatus according to claim 1, wherein the first electrical potential is of different polarity to an electrokinetic potential of a surface of at least one of bubbles and particles in the immersion liquid.
28. A lithographic apparatus, comprising:
a support configured to support a patterning structure which is configured to impart a beam of radiation with a pattern in its cross-section;
a substrate table configured to hold a substrate;
a projection system configured to project the patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid; and
the liquid supply system having means for moving at least one of bubbles and particles, when in the space, in the immersion liquid supplied by the liquid supply system by the application of a voltage to the immersion liquid, the bubbles and/or the particles.
29. A lithographic apparatus, comprising:
a support configured to support a patterning structure configured to impart a beam of radiation with a pattern in its cross-section;
a substrate table configured to hold a substrate;
a projection system configured to project the patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid, wherein the liquid supply system comprises means for applying a charge to an object, the charge being the same or opposite in polarity to an electrokinetic potential of bubbles in the immersion liquid such that at least one of bubbles and particles, when in the space, in the immersion liquid supplied by the liquid supply system have a force on them in a direction away from or towards the object.
30. A lithographic apparatus, comprising:
a support configured to support a patterning structure which is configured to impart a beam of radiation with a pattern in its cross-section;
a substrate table configured to hold a substrate;
a projection system configured to project the patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid;
the liquid supply system having a potential field generator configured to generate an electrical field in the immersion liquid effective to move at least one of bubbles and particles, when in the space, in the immersion liquid supplied by the liquid supply system.
31. A device manufacturing method, comprising:
projecting a patterned beam of radiation onto a target portion of a substrate using a projection system;
providing an immersion liquid from a liquid supply system to the space between the projection system and the substrate; and
applying a force on at least one of bubbles and particles, when in the space, in the immersion liquid provided by the liquid supply system by applying a charge to an object.
32. A method according to claim 31, wherein the object forms a border of the space.
33. A method according to claim 31, wherein the object is in contact with the immersion liquid in a supply channel upstream of the space.
34. A lithographic apparatus, comprising:
a substrate table configured to hold a substrate;
a projection system configured to project a patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid; and
a force applicator constructed and arranged to move particles, when in the space, in the immersion liquid independent of the flow or pressure of the immersion liquid, the particles being of different material than the immersion liquid.
35. An apparatus according to claim 34, wherein the force applicator is constructed and arranged to move the particles (i) away from the substrate, or (ii) from an optical axis of the projection system, or (iii) towards a final optical element of the projection system, or (iv) towards a liquid confinement structure, or (v) towards an object close to a final optical element of the projection system, or (vi) any combination selected from (i)-(v).
36. An apparatus according to claim 34, wherein the force applicator comprises a power source.
37. An apparatus according to claim 36, wherein the power source is configured to apply a first electrical potential across the immersion liquid.
38. An apparatus according to claim 37, wherein the first electrical potential is applied to a first object.
39. An apparatus according to claim 38, wherein the first object is in contact with the immersion liquid.
40. An apparatus according to claim 38, wherein the first object forms a border of the space.
41. An apparatus according to claim 38, wherein the first object is in contact with the immersion liquid in a supply channel upstream of the space.
42. An apparatus according to claim 34, further comprising an illumination system configured to provide a projection beam of radiation.
43. An apparatus according to claim 34, further comprising a support configured to support a patterning structure, the patterning structure configured to impart a projection beam with a pattern in its cross-section.
44. A lithographic apparatus, comprising:
a substrate table configured to hold a substrate;
a projection system configured to project a patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid; and
a force applicator constructed and arranged to move particles in the immersion liquid independent of the flow or pressure of the immersion liquid and from the substrate, from an optical axis of the projection system, or from both the substrate and the optical axis, the particles being of different material than the immersion liquid.
45. A lithographic apparatus, comprising:
a substrate table configured to hold a substrate;
a projection system configured to project a patterned beam onto a target portion of the substrate;
a liquid supply system configured to at least partly fill a space between the projection system and the substrate with an immersion liquid; and
a force applicator constructed and arranged in a supply channel upstream of the space to move particles, when in the space, in the immersion liquid independent of the flow or pressure of the immersion liquid, the particles being of different material than the immersion liquid.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100128235A1 (en) * 2003-06-11 2010-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9036128B2 (en) 2007-12-20 2015-05-19 Asml Netherlands B.V. Lithographic apparatus and in-line cleaning apparatus

Families Citing this family (140)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US8149381B2 (en) 2003-08-26 2012-04-03 Nikon Corporation Optical element and exposure apparatus
KR101094114B1 (en) * 2003-08-26 2011-12-15 가부시키가이샤 니콘 Optical element and exposure device
EP2261740B1 (en) 2003-08-29 2014-07-09 ASML Netherlands BV Lithographic apparatus
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
WO2005022616A1 (en) * 2003-08-29 2005-03-10 Nikon Corporation Exposure apparatus and device producing method
EP1660925B1 (en) * 2003-09-03 2015-04-29 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
WO2005029559A1 (en) * 2003-09-19 2005-03-31 Nikon Corporation Exposure apparatus and device producing method
JP4438747B2 (en) * 2003-09-26 2010-03-24 株式会社ニコン Projection exposure apparatus, projection exposure apparatus cleaning method, maintenance method, and device manufacturing method
KR101441840B1 (en) * 2003-09-29 2014-11-04 가부시키가이샤 니콘 Exposure apparatus, exposure method, and device manufacturing method
JP2005136364A (en) * 2003-10-08 2005-05-26 Zao Nikon Co Ltd Substrate carrying device, exposure device and device manufacturing method
JP4319188B2 (en) 2003-10-08 2009-08-26 株式会社蔵王ニコン Substrate transport apparatus and substrate transport method, exposure apparatus and exposure method, device manufacturing apparatus and device manufacturing method
KR20060126949A (en) 2003-10-08 2006-12-11 가부시키가이샤 니콘 Substrate transporting apparatus and method, exposure apparatus and method, and device producing method
TW201738932A (en) 2003-10-09 2017-11-01 Nippon Kogaku Kk Exposure apparatus, exposure method, and device producing method
WO2005038888A1 (en) * 2003-10-22 2005-04-28 Nikon Corporation Exposure apparatus, exposure method, and method for manufacturing device
US7411653B2 (en) * 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI605315B (en) 2003-12-03 2017-11-11 Nippon Kogaku Kk Exposure device, exposure method, and device manufacturing method
JP4720506B2 (en) 2003-12-15 2011-07-13 株式会社ニコン Stage apparatus, exposure apparatus, and exposure method
US20070081133A1 (en) * 2004-12-14 2007-04-12 Niikon Corporation Projection exposure apparatus and stage unit, and exposure method
JPWO2005057635A1 (en) * 2003-12-15 2007-07-05 株式会社ニコン Projection exposure apparatus, stage apparatus, and exposure method
US7589818B2 (en) * 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7394521B2 (en) * 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
ATE459898T1 (en) * 2004-01-20 2010-03-15 Zeiss Carl Smt Ag EXPOSURE DEVICE AND MEASURING DEVICE FOR A PROJECTION LENS
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
KR101377815B1 (en) 2004-02-03 2014-03-26 가부시키가이샤 니콘 Exposure apparatus and method of producing device
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TW201816844A (en) 2004-03-25 2018-05-01 日商尼康股份有限公司 Exposure apparatus, exposure method, and device manufacturing method
US7034917B2 (en) * 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1747499A2 (en) * 2004-05-04 2007-01-31 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) * 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7796274B2 (en) 2004-06-04 2010-09-14 Carl Zeiss Smt Ag System for measuring the image quality of an optical imaging system
KR101421915B1 (en) 2004-06-09 2014-07-22 가부시키가이샤 니콘 Exposure system and device production method
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101433491B1 (en) 2004-07-12 2014-08-22 가부시키가이샤 니콘 Exposure equipment and device manufacturing method
US7248332B2 (en) * 2004-07-13 2007-07-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4983257B2 (en) * 2004-08-18 2012-07-25 株式会社ニコン Exposure apparatus, device manufacturing method, measuring member, and measuring method
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7385670B2 (en) * 2004-10-05 2008-06-10 Asml Netherlands B.V. Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus
JP4961709B2 (en) * 2004-10-13 2012-06-27 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
US7397533B2 (en) 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7403261B2 (en) * 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE602006012746D1 (en) * 2005-01-14 2010-04-22 Asml Netherlands Bv Lithographic apparatus and manufacturing method
KR101427056B1 (en) 2005-01-31 2014-08-05 가부시키가이샤 니콘 Exposure apparatus and method for manufacturing device
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
US7282701B2 (en) 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
JP2006269940A (en) * 2005-03-25 2006-10-05 Canon Inc Exposure device and exposure method
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
WO2006122578A1 (en) * 2005-05-17 2006-11-23 Freescale Semiconductor, Inc. Contaminant removal apparatus and method therefor
US20070085989A1 (en) * 2005-06-21 2007-04-19 Nikon Corporation Exposure apparatus and exposure method, maintenance method, and device manufacturing method
US7357768B2 (en) * 2005-09-22 2008-04-15 William Marshall Recliner exerciser
JP2007103658A (en) * 2005-10-04 2007-04-19 Canon Inc Method and device for exposure as well as method of manufacturing device
US7986395B2 (en) 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
KR100724082B1 (en) 2005-11-18 2007-06-04 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Megasonic immersion lithography exposure apparatus and method
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US20070124987A1 (en) * 2005-12-05 2007-06-07 Brown Jeffrey K Electronic pest control apparatus
KR100768849B1 (en) * 2005-12-06 2007-10-22 엘지전자 주식회사 Power supply apparatus and method for line conection type fuel cell system
US7839483B2 (en) * 2005-12-28 2010-11-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a control system
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101236426B1 (en) * 2006-02-14 2013-02-22 삼성디스플레이 주식회사 ink-jet printhead and purging method thereof
US7893047B2 (en) * 2006-03-03 2011-02-22 Arch Chemicals, Inc. Biocide composition comprising pyrithione and pyrrole derivatives
DE102006021797A1 (en) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optical imaging device with thermal damping
US7969548B2 (en) * 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
US8564759B2 (en) 2006-06-29 2013-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
WO2008029884A1 (en) * 2006-09-08 2008-03-13 Nikon Corporation Cleaning member, cleaning method and device manufacturing method
WO2008053918A1 (en) * 2006-10-31 2008-05-08 Nikon Corporation Liquid holding apparatus, liquid holding method, exposure apparatus, exposure method and device manufacturing method
US7800731B2 (en) * 2006-11-03 2010-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for removing particles in immersion lithography
US8817226B2 (en) 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US8654305B2 (en) * 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
JP2010519722A (en) * 2007-02-23 2010-06-03 株式会社ニコン Exposure method, exposure apparatus, device manufacturing method, and immersion exposure substrate
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
JP5055549B2 (en) * 2007-03-22 2012-10-24 国立大学法人宇都宮大学 Immersion exposure equipment
US9013672B2 (en) * 2007-05-04 2015-04-21 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US7866330B2 (en) 2007-05-04 2011-01-11 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8011377B2 (en) 2007-05-04 2011-09-06 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US20090025753A1 (en) * 2007-07-24 2009-01-29 Asml Netherlands B.V. Lithographic Apparatus And Contamination Removal Or Prevention Method
US7916269B2 (en) 2007-07-24 2011-03-29 Asml Netherlands B.V. Lithographic apparatus and contamination removal or prevention method
SG151198A1 (en) * 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
NL1035942A1 (en) * 2007-09-27 2009-03-30 Asml Netherlands Bv Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus.
JP5017232B2 (en) * 2007-10-31 2012-09-05 エーエスエムエル ネザーランズ ビー.ブイ. Cleaning apparatus and immersion lithography apparatus
NL1036211A1 (en) * 2007-12-03 2009-06-04 Asml Netherlands Bv Lithographic Apparatus and Device Manufacturing Method.
NL1036187A1 (en) * 2007-12-03 2009-06-04 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
NL1036273A1 (en) * 2007-12-18 2009-06-19 Asml Netherlands Bv Lithographic apparatus and method of cleaning a surface or an immersion lithographic apparatus.
US8339572B2 (en) 2008-01-25 2012-12-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101448152B1 (en) * 2008-03-26 2014-10-07 삼성전자주식회사 Distance measuring sensor having vertical photogate and three dimensional color image sensor having the same
JP5097166B2 (en) 2008-05-28 2012-12-12 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus and method of operating the apparatus
GB2470049B (en) 2009-05-07 2011-03-23 Zeiss Carl Smt Ag Optical imaging with reduced immersion liquid evaporation effects
MX2012007581A (en) * 2009-12-28 2012-07-30 Pioneer Hi Bred Int Sorghum fertility restorer genotypes and methods of marker-assisted selection.
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
CN104238274B (en) * 2013-06-19 2016-12-28 上海微电子装备有限公司 Immersed photoetching machine immersion flow field maintains device and method
CN104808325B (en) * 2014-01-25 2017-10-24 清华大学 A kind of method by optical microscope inspection nanostructured
CN104808326B (en) * 2014-01-25 2017-10-24 清华大学 A kind of servicing unit of light microscope
JP6456238B2 (en) 2015-05-14 2019-01-23 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device

Citations (138)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3527684A (en) 1967-03-13 1970-09-08 Eastman Kodak Co Method of increasing contrast in electrophoretic reproduction
US3573975A (en) 1968-07-10 1971-04-06 Ibm Photochemical fabrication process
US3648587A (en) 1967-10-20 1972-03-14 Eastman Kodak Co Focus control for optical instruments
US4013554A (en) 1974-05-17 1977-03-22 Sachs-Systemtechnik Gmbh Method and apparatus for purifying water contaminated with anodically oxidizable organic matter
EP0023231A1 (en) 1979-07-27 1981-02-04 Tabarelli, Werner, Dr. Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4390273A (en) 1981-02-17 1983-06-28 Censor Patent-Und Versuchsanstalt Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
US4396705A (en) 1980-09-19 1983-08-02 Hitachi, Ltd. Pattern forming method and pattern forming apparatus using exposures in a liquid
JPS58202448A (en) 1982-05-21 1983-11-25 Hitachi Ltd Exposing device
DD206607A1 (en) 1982-06-16 1984-02-01 Mikroelektronik Zt Forsch Tech METHOD AND DEVICE FOR ELIMINATING INTERFERENCE EFFECTS
US4480910A (en) 1981-03-18 1984-11-06 Hitachi, Ltd. Pattern forming apparatus
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
DD221263A1 (en) 1983-11-01 1985-04-17 Zeiss Jena Veb Carl ARRANGEMENT FOR MONITORING A CAN LEVEL FOR LEVELING INSTRUMENTS
DD221563A1 (en) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech IMMERSIONS OBJECTIVE FOR THE STEP-BY-STEP PROJECTION IMAGING OF A MASK STRUCTURE
DD224448A1 (en) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION
US4569739A (en) 1984-12-31 1986-02-11 Dorr-Oliver Incorporated Electrofilter using an improved electrode assembly
DD242880A1 (en) 1983-01-31 1987-02-11 Kuch Karl Heinz DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION
FR2474708B1 (en) 1980-01-24 1987-02-20 Dme HIGH-RESOLUTION MICROPHOTOLITHOGRAPHY PROCESS
JPS6265326U (en) 1985-10-16 1987-04-23
JPS62121417U (en) 1986-01-24 1987-08-01
JPS63157419U (en) 1987-03-31 1988-10-14
EP0418427A2 (en) 1989-09-06 1991-03-27 Eiichi Miyake Exposure process
US5040020A (en) 1988-03-31 1991-08-13 Cornell Research Foundation, Inc. Self-aligned, high resolution resonant dielectric lithography
US5121256A (en) 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JPH04305915A (en) 1991-04-02 1992-10-28 Nikon Corp Adhesion type exposure device
JPH04305917A (en) 1991-04-02 1992-10-28 Nikon Corp Adhesion type exposure device
US5223331A (en) 1990-07-31 1993-06-29 Matsushita Electric Industrial Co., Ltd. Organic device and method for producing the same
US5289001A (en) 1989-08-07 1994-02-22 Hitachi, Ltd. Laser beam scanning apparatus having a variable focal distance device and the variable focal distance device for use in the apparatus
JPH06124873A (en) 1992-10-09 1994-05-06 Canon Inc Liquid-soaking type projection exposure apparatus
JPH06168866A (en) 1992-11-27 1994-06-14 Canon Inc Projection aligner immersed in liquid
JPH06262005A (en) 1993-03-11 1994-09-20 Ishikawajima Harima Heavy Ind Co Ltd Air bubble removing device
JPH07132262A (en) 1992-12-21 1995-05-23 Tokyo Electron Ltd Liquid treating device of immersion type
JPH07220990A (en) 1994-01-28 1995-08-18 Hitachi Ltd Pattern forming method and exposure apparatus therefor
US5715039A (en) 1995-05-19 1998-02-03 Hitachi, Ltd. Projection exposure apparatus and method which uses multiple diffraction gratings in order to produce a solid state device with fine patterns
JPH1078649A (en) 1996-09-03 1998-03-24 Nec Yamaguchi Ltd Cleaning device for reticle
EP0834773A2 (en) 1996-10-07 1998-04-08 Nikon Corporation Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JPH10228661A (en) 1997-02-14 1998-08-25 Sony Corp Master disk manufacturing aligner for optical recording medium
JPH10255319A (en) 1997-03-12 1998-09-25 Hitachi Maxell Ltd Master disk exposure device and method therefor
JPH10303114A (en) 1997-04-23 1998-11-13 Nikon Corp Immersion aligner
JPH10340846A (en) 1997-06-10 1998-12-22 Nikon Corp Aligner, its manufacture, exposing method and device manufacturing method
US5900354A (en) 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
JPH11176727A (en) 1997-12-11 1999-07-02 Nikon Corp Projection aligner
WO1999049504A1 (en) 1998-03-26 1999-09-30 Nikon Corporation Projection exposure method and system
JP2000058436A (en) 1998-08-11 2000-02-25 Nikon Corp Projection aligner and exposure method
JP2000162761A (en) 1998-09-22 2000-06-16 Mitsui Chemicals Inc Pellicle, its production and exposing method
JP2000323396A (en) 1999-05-13 2000-11-24 Canon Inc Exposure method, aligner, and manufacture thereof
US6207331B1 (en) 1997-07-07 2001-03-27 Fuji Xerox Co., Ltd. Aqueous image recording method for electrochemically depositing an image forming material
JP2001091849A (en) 1999-09-21 2001-04-06 Olympus Optical Co Ltd Liquid immersion objective lens for microscope
US6236634B1 (en) 1996-08-26 2001-05-22 Digital Papyrus Corporation Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
US20020020821A1 (en) 2000-08-08 2002-02-21 Koninklijke Philips Electronics N.V. Method of manufacturing an optically scannable information carrier
US6413401B1 (en) 1996-07-03 2002-07-02 Caliper Technologies Corp. Variable control of electroosmotic and/or electrophoretic forces within a fluid-containing structure via electrical forces
US20020163629A1 (en) 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
US6496257B1 (en) 1997-11-21 2002-12-17 Nikon Corporation Projection exposure apparatus and method
US6560032B2 (en) 2000-03-27 2003-05-06 Olympus Optical Co., Ltd. Liquid immersion lens system and optical apparatus using the same
US20030123040A1 (en) 2001-11-07 2003-07-03 Gilad Almogy Optical spot grid array printer
US20030136668A1 (en) 2001-06-18 2003-07-24 Itsuki Kobata Electrolytic processing device and substrate processing apparatus
US6600547B2 (en) 2001-09-24 2003-07-29 Nikon Corporation Sliding seal
US6603130B1 (en) 1999-04-19 2003-08-05 Asml Netherlands B.V. Gas bearings for use with vacuum chambers and their application in lithographic projection apparatuses
US20030174408A1 (en) 2002-03-08 2003-09-18 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US6633365B2 (en) 2000-12-11 2003-10-14 Nikon Corporation Projection optical system and exposure apparatus having the projection optical system
US20040000627A1 (en) 2002-06-28 2004-01-01 Carl Zeiss Semiconductor Manufacturing Technologies Ag Method for focus detection and an imaging system with a focus-detection system
US20040017989A1 (en) 2002-07-23 2004-01-29 So Daniel W. Fabricating sub-resolution structures in planar lightwave devices
US20040036019A1 (en) 2000-02-17 2004-02-26 Goodley Paul C. Micro matrix ion generator for analyzers
US20040075895A1 (en) 2002-10-22 2004-04-22 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
US20040109237A1 (en) 2002-12-09 2004-06-10 Carl Zeiss Smt Ag Projection objective, especially for microlithography, and method for adjusting a projection objective
US20040119954A1 (en) 2002-12-10 2004-06-24 Miyoko Kawashima Exposure apparatus and method
WO2004053957A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Surface position detection apparatus, exposure method, and device porducing method
WO2004053955A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure system and device producing method
WO2004053596A2 (en) 2002-12-10 2004-06-24 Carl Zeiss Smt Ag Method for adjusting a desired optical property of a positioning lens and microlithographic projection exposure system
WO2004053951A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure method, exposure apparatus and method for manufacturing device
WO2004053950A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004053952A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004053956A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
WO2004053954A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004053958A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004053953A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004053959A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Optical device and projection exposure apparatus using such optical device
WO2004055803A1 (en) 2002-12-13 2004-07-01 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
US20040125351A1 (en) 2002-12-30 2004-07-01 Krautschik Christof Gabriel Immersion lithography
JP2004193252A (en) 2002-12-10 2004-07-08 Nikon Corp Exposing method and device manufacturing method
WO2004057589A1 (en) 2002-12-19 2004-07-08 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
WO2004057590A1 (en) 2002-12-19 2004-07-08 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
WO2004019128A3 (en) 2002-08-23 2004-10-28 Nippon Kogaku Kk Projection optical system and method for photolithography and exposure apparatus and method using same
US20050024609A1 (en) 2003-06-11 2005-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050037269A1 (en) * 2003-08-11 2005-02-17 Levinson Harry J. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
EP1039511A4 (en) 1997-12-12 2005-03-02 Nikon Corp Projection exposure method and projection aligner
JP2005072404A (en) 2003-08-27 2005-03-17 Sony Corp Aligner and manufacturing method of semiconductor device
JP2005079222A (en) 2003-08-29 2005-03-24 Nikon Corp Immersion projection aligner mounting cleaning mechanism of optical component, and immersion optical component cleaning method
US20050110973A1 (en) 2003-11-24 2005-05-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050132914A1 (en) 2003-12-23 2005-06-23 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US20050175776A1 (en) 2003-11-14 2005-08-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US6952253B2 (en) 2002-11-12 2005-10-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US20050274898A1 (en) 2002-12-03 2005-12-15 Nikon Corporation Pollutant removal method and apparatus, and exposure method and apparatus
WO2005122218A1 (en) 2004-06-09 2005-12-22 Nikon Corporation Exposure system and device production method
US20060023185A1 (en) 2003-04-11 2006-02-02 Nikon Corporation Cleanup method for optics in immersion lithography
US7006209B2 (en) * 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7009682B2 (en) 2002-11-18 2006-03-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060050351A1 (en) 2004-09-06 2006-03-09 Tatsuhiko Higashiki Liquid immersion optical tool, method for cleaning liquid immersion optical tool, and method for manufacturing semiconductor device
US7014966B2 (en) * 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
WO2006041086A1 (en) 2004-10-13 2006-04-20 Nikon Corporation Exposure device, exposure method, and device manufacturing method
US20060103818A1 (en) 2004-11-18 2006-05-18 International Business Machines Corporation Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006134999A (en) 2004-11-04 2006-05-25 Sony Corp Immersion-type exposure device and method for cleaning holding base in immersion-type exposure device
WO2006062065A1 (en) 2004-12-06 2006-06-15 Nikon Corporation Maintenance method, maintenance apparatus, exposure apparatus and device manufacturing method
US20060132731A1 (en) 2004-12-20 2006-06-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7075616B2 (en) 2002-11-12 2006-07-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7081943B2 (en) 2002-11-12 2006-07-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7091502B2 (en) 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
US20060232757A1 (en) 2003-09-26 2006-10-19 Nikon Corporation Projection exposure apparatus, cleaning and maintenance methods of a projection exposure apparatus, and device manufacturing method
US20060256316A1 (en) 2003-10-08 2006-11-16 Zao Nikon Co., Ltd. Substrate transport apparatus and method, exposure apparatus and exposure method, and device fabricating method
US7193232B2 (en) 2002-11-12 2007-03-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method with substrate measurement not through liquid
US20070064215A1 (en) 2003-12-23 2007-03-22 Koninklijke Philips Electronic, N.V. Removable pellicle for immersion lithography
US7199858B2 (en) 2002-11-12 2007-04-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7224427B2 (en) 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
US7224434B2 (en) 2004-10-19 2007-05-29 Canon Kabushiki Kaisha Exposure method
US20070127001A1 (en) 2005-12-02 2007-06-07 Asml Netherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US20070146657A1 (en) 2005-12-27 2007-06-28 Asml Netherlands B.V. Lithographic apparatus and method
US20070146658A1 (en) 2005-12-27 2007-06-28 Asml Netherlands B.V. Lithographic apparatus and method
US20070159610A1 (en) 2004-02-10 2007-07-12 Nikon Corporation Exposure apparatus, device manufacturing method, maintenance method, and exposure method
US20070206279A1 (en) 2004-07-09 2007-09-06 Vistec Semiconductor Systems Gmbh Device for inspecting a microscopic component by means of an immersion objective
US20070247600A1 (en) 2003-05-23 2007-10-25 Nikon Corporation Exposure apparatus and method for producing device
US20070251543A1 (en) 2006-04-28 2007-11-01 Asml Netherlands B.V. Methods to clean a surface, a device manufacturing method, a cleaning assembly, cleaning apparatus, and lithographic apparatus
US20070258072A1 (en) 2004-06-21 2007-11-08 Nikon Corporation Exposure apparatus, method for cleaning memeber thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
US7307263B2 (en) 2004-07-14 2007-12-11 Asml Netherlands B.V. Lithographic apparatus, radiation system, contaminant trap, device manufacturing method, and method for trapping contaminants in a contaminant trap
US20070285631A1 (en) 2006-05-22 2007-12-13 Asml Netherland B.V Lithographic apparatus and lithographic apparatus cleaning method
US7317504B2 (en) 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7359030B2 (en) 2002-11-29 2008-04-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7385670B2 (en) 2004-10-05 2008-06-10 Asml Netherlands B.V. Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7405417B2 (en) 2005-12-20 2008-07-29 Asml Netherlands B.V. Lithographic apparatus having a monitoring device for detecting contamination
US20080273181A1 (en) 2007-05-04 2008-11-06 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US20080284990A1 (en) 2007-05-04 2008-11-20 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic cleaning method
US7462850B2 (en) 2005-12-08 2008-12-09 Asml Netherlands B.V. Radical cleaning arrangement for a lithographic apparatus
US20090025753A1 (en) 2007-07-24 2009-01-29 Asml Netherlands B.V. Lithographic Apparatus And Contamination Removal Or Prevention Method
US20090027635A1 (en) 2007-07-24 2009-01-29 Asml Netherlands B.V. Lithographic Apparatus and Contamination Removal or Prevention Method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE224448C (en)
DE242880C (en)
DE206607C (en)
DE221563C (en)
JPS6265326A (en) 1985-09-18 1987-03-24 Hitachi Ltd Exposure device
JPS62121417A (en) 1985-11-22 1987-06-02 Hitachi Ltd Liquid-immersion objective lens device
JPS63157419A (en) 1986-12-22 1988-06-30 Toshiba Corp Fine pattern transfer apparatus
EP1491956B1 (en) * 2003-06-27 2006-09-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1494074A1 (en) * 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method

Patent Citations (152)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3527684A (en) 1967-03-13 1970-09-08 Eastman Kodak Co Method of increasing contrast in electrophoretic reproduction
US3648587A (en) 1967-10-20 1972-03-14 Eastman Kodak Co Focus control for optical instruments
US3573975A (en) 1968-07-10 1971-04-06 Ibm Photochemical fabrication process
US4013554A (en) 1974-05-17 1977-03-22 Sachs-Systemtechnik Gmbh Method and apparatus for purifying water contaminated with anodically oxidizable organic matter
EP0023231A1 (en) 1979-07-27 1981-02-04 Tabarelli, Werner, Dr. Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
FR2474708B1 (en) 1980-01-24 1987-02-20 Dme HIGH-RESOLUTION MICROPHOTOLITHOGRAPHY PROCESS
US4396705A (en) 1980-09-19 1983-08-02 Hitachi, Ltd. Pattern forming method and pattern forming apparatus using exposures in a liquid
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4390273A (en) 1981-02-17 1983-06-28 Censor Patent-Und Versuchsanstalt Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
US4480910A (en) 1981-03-18 1984-11-06 Hitachi, Ltd. Pattern forming apparatus
JPS58202448A (en) 1982-05-21 1983-11-25 Hitachi Ltd Exposing device
DD206607A1 (en) 1982-06-16 1984-02-01 Mikroelektronik Zt Forsch Tech METHOD AND DEVICE FOR ELIMINATING INTERFERENCE EFFECTS
DD242880A1 (en) 1983-01-31 1987-02-11 Kuch Karl Heinz DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION
DD221563A1 (en) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech IMMERSIONS OBJECTIVE FOR THE STEP-BY-STEP PROJECTION IMAGING OF A MASK STRUCTURE
DD221263A1 (en) 1983-11-01 1985-04-17 Zeiss Jena Veb Carl ARRANGEMENT FOR MONITORING A CAN LEVEL FOR LEVELING INSTRUMENTS
DD224448A1 (en) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION
US4569739A (en) 1984-12-31 1986-02-11 Dorr-Oliver Incorporated Electrofilter using an improved electrode assembly
JPS6265326U (en) 1985-10-16 1987-04-23
JPS62121417U (en) 1986-01-24 1987-08-01
JPS63157419U (en) 1987-03-31 1988-10-14
US5040020A (en) 1988-03-31 1991-08-13 Cornell Research Foundation, Inc. Self-aligned, high resolution resonant dielectric lithography
US5289001A (en) 1989-08-07 1994-02-22 Hitachi, Ltd. Laser beam scanning apparatus having a variable focal distance device and the variable focal distance device for use in the apparatus
JPH03209479A (en) 1989-09-06 1991-09-12 Sanee Giken Kk Exposure method
EP0418427A2 (en) 1989-09-06 1991-03-27 Eiichi Miyake Exposure process
US5223331A (en) 1990-07-31 1993-06-29 Matsushita Electric Industrial Co., Ltd. Organic device and method for producing the same
US5121256A (en) 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JPH04305915A (en) 1991-04-02 1992-10-28 Nikon Corp Adhesion type exposure device
JPH04305917A (en) 1991-04-02 1992-10-28 Nikon Corp Adhesion type exposure device
JPH06124873A (en) 1992-10-09 1994-05-06 Canon Inc Liquid-soaking type projection exposure apparatus
JPH06168866A (en) 1992-11-27 1994-06-14 Canon Inc Projection aligner immersed in liquid
EP0605103A1 (en) 1992-11-27 1994-07-06 Canon Kabushiki Kaisha Projection apparatus for immersed exposure
US5610683A (en) 1992-11-27 1997-03-11 Canon Kabushiki Kaisha Immersion type projection exposure apparatus
JPH07132262A (en) 1992-12-21 1995-05-23 Tokyo Electron Ltd Liquid treating device of immersion type
JPH06262005A (en) 1993-03-11 1994-09-20 Ishikawajima Harima Heavy Ind Co Ltd Air bubble removing device
JPH07220990A (en) 1994-01-28 1995-08-18 Hitachi Ltd Pattern forming method and exposure apparatus therefor
US5715039A (en) 1995-05-19 1998-02-03 Hitachi, Ltd. Projection exposure apparatus and method which uses multiple diffraction gratings in order to produce a solid state device with fine patterns
US6413401B1 (en) 1996-07-03 2002-07-02 Caliper Technologies Corp. Variable control of electroosmotic and/or electrophoretic forces within a fluid-containing structure via electrical forces
US6236634B1 (en) 1996-08-26 2001-05-22 Digital Papyrus Corporation Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
JPH1078649A (en) 1996-09-03 1998-03-24 Nec Yamaguchi Ltd Cleaning device for reticle
EP0834773A2 (en) 1996-10-07 1998-04-08 Nikon Corporation Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
EP0834773A3 (en) 1996-10-07 1999-07-28 Nikon Corporation Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
US6191429B1 (en) 1996-10-07 2001-02-20 Nikon Precision Inc. Projection exposure apparatus and method with workpiece area detection
JPH10228661A (en) 1997-02-14 1998-08-25 Sony Corp Master disk manufacturing aligner for optical recording medium
JPH10255319A (en) 1997-03-12 1998-09-25 Hitachi Maxell Ltd Master disk exposure device and method therefor
JPH10303114A (en) 1997-04-23 1998-11-13 Nikon Corp Immersion aligner
JPH10340846A (en) 1997-06-10 1998-12-22 Nikon Corp Aligner, its manufacture, exposing method and device manufacturing method
US5900354A (en) 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US6207331B1 (en) 1997-07-07 2001-03-27 Fuji Xerox Co., Ltd. Aqueous image recording method for electrochemically depositing an image forming material
US6496257B1 (en) 1997-11-21 2002-12-17 Nikon Corporation Projection exposure apparatus and method
JPH11176727A (en) 1997-12-11 1999-07-02 Nikon Corp Projection aligner
EP1039511A4 (en) 1997-12-12 2005-03-02 Nikon Corp Projection exposure method and projection aligner
WO1999049504A1 (en) 1998-03-26 1999-09-30 Nikon Corporation Projection exposure method and system
JP2000058436A (en) 1998-08-11 2000-02-25 Nikon Corp Projection aligner and exposure method
JP2000162761A (en) 1998-09-22 2000-06-16 Mitsui Chemicals Inc Pellicle, its production and exposing method
US6603130B1 (en) 1999-04-19 2003-08-05 Asml Netherlands B.V. Gas bearings for use with vacuum chambers and their application in lithographic projection apparatuses
JP2000323396A (en) 1999-05-13 2000-11-24 Canon Inc Exposure method, aligner, and manufacture thereof
JP2001091849A (en) 1999-09-21 2001-04-06 Olympus Optical Co Ltd Liquid immersion objective lens for microscope
US20040036019A1 (en) 2000-02-17 2004-02-26 Goodley Paul C. Micro matrix ion generator for analyzers
US6560032B2 (en) 2000-03-27 2003-05-06 Olympus Optical Co., Ltd. Liquid immersion lens system and optical apparatus using the same
US20020020821A1 (en) 2000-08-08 2002-02-21 Koninklijke Philips Electronics N.V. Method of manufacturing an optically scannable information carrier
US6633365B2 (en) 2000-12-11 2003-10-14 Nikon Corporation Projection optical system and exposure apparatus having the projection optical system
US20040021844A1 (en) 2000-12-11 2004-02-05 Nikon Corporation Projection optical system and exposure apparatus having the projection optical system
US20020163629A1 (en) 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
US20030136668A1 (en) 2001-06-18 2003-07-24 Itsuki Kobata Electrolytic processing device and substrate processing apparatus
US6600547B2 (en) 2001-09-24 2003-07-29 Nikon Corporation Sliding seal
US20030123040A1 (en) 2001-11-07 2003-07-03 Gilad Almogy Optical spot grid array printer
WO2003077037A1 (en) 2002-03-08 2003-09-18 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
WO2003077036A1 (en) 2002-03-08 2003-09-18 Carl Zeiss Smt Ag High-aperture projection lens
US20030174408A1 (en) 2002-03-08 2003-09-18 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US20040000627A1 (en) 2002-06-28 2004-01-01 Carl Zeiss Semiconductor Manufacturing Technologies Ag Method for focus detection and an imaging system with a focus-detection system
US20040017989A1 (en) 2002-07-23 2004-01-29 So Daniel W. Fabricating sub-resolution structures in planar lightwave devices
WO2004019128A3 (en) 2002-08-23 2004-10-28 Nippon Kogaku Kk Projection optical system and method for photolithography and exposure apparatus and method using same
US20040075895A1 (en) 2002-10-22 2004-04-22 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
US7199858B2 (en) 2002-11-12 2007-04-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7193232B2 (en) 2002-11-12 2007-03-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method with substrate measurement not through liquid
US7081943B2 (en) 2002-11-12 2006-07-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7075616B2 (en) 2002-11-12 2006-07-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US6952253B2 (en) 2002-11-12 2005-10-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7009682B2 (en) 2002-11-18 2006-03-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7359030B2 (en) 2002-11-29 2008-04-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050274898A1 (en) 2002-12-03 2005-12-15 Nikon Corporation Pollutant removal method and apparatus, and exposure method and apparatus
US20040109237A1 (en) 2002-12-09 2004-06-10 Carl Zeiss Smt Ag Projection objective, especially for microlithography, and method for adjusting a projection objective
WO2004053955A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure system and device producing method
WO2004053951A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure method, exposure apparatus and method for manufacturing device
US20040119954A1 (en) 2002-12-10 2004-06-24 Miyoko Kawashima Exposure apparatus and method
WO2004053957A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Surface position detection apparatus, exposure method, and device porducing method
JP2004193252A (en) 2002-12-10 2004-07-08 Nikon Corp Exposing method and device manufacturing method
WO2004053596A2 (en) 2002-12-10 2004-06-24 Carl Zeiss Smt Ag Method for adjusting a desired optical property of a positioning lens and microlithographic projection exposure system
WO2004053959A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Optical device and projection exposure apparatus using such optical device
WO2004053953A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004053950A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004053952A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004053958A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004053956A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
US20050264774A1 (en) 2002-12-10 2005-12-01 Nikon Corporation Exposure apparatus and method for producing device
WO2004053954A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004055803A1 (en) 2002-12-13 2004-07-01 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
WO2004057590A1 (en) 2002-12-19 2004-07-08 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
WO2004057589A1 (en) 2002-12-19 2004-07-08 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
US20040125351A1 (en) 2002-12-30 2004-07-01 Krautschik Christof Gabriel Immersion lithography
US20060023185A1 (en) 2003-04-11 2006-02-02 Nikon Corporation Cleanup method for optics in immersion lithography
US20070247600A1 (en) 2003-05-23 2007-10-25 Nikon Corporation Exposure apparatus and method for producing device
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050024609A1 (en) 2003-06-11 2005-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7006209B2 (en) * 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US20050037269A1 (en) * 2003-08-11 2005-02-17 Levinson Harry J. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
JP2005072404A (en) 2003-08-27 2005-03-17 Sony Corp Aligner and manufacturing method of semiconductor device
JP2005079222A (en) 2003-08-29 2005-03-24 Nikon Corp Immersion projection aligner mounting cleaning mechanism of optical component, and immersion optical component cleaning method
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7014966B2 (en) * 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
US20060232757A1 (en) 2003-09-26 2006-10-19 Nikon Corporation Projection exposure apparatus, cleaning and maintenance methods of a projection exposure apparatus, and device manufacturing method
US20060256316A1 (en) 2003-10-08 2006-11-16 Zao Nikon Co., Ltd. Substrate transport apparatus and method, exposure apparatus and exposure method, and device fabricating method
US20050175776A1 (en) 2003-11-14 2005-08-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050110973A1 (en) 2003-11-24 2005-05-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070064215A1 (en) 2003-12-23 2007-03-22 Koninklijke Philips Electronic, N.V. Removable pellicle for immersion lithography
US20050132914A1 (en) 2003-12-23 2005-06-23 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070159610A1 (en) 2004-02-10 2007-07-12 Nikon Corporation Exposure apparatus, device manufacturing method, maintenance method, and exposure method
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7317504B2 (en) 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7091502B2 (en) 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
WO2005122218A1 (en) 2004-06-09 2005-12-22 Nikon Corporation Exposure system and device production method
US20070258072A1 (en) 2004-06-21 2007-11-08 Nikon Corporation Exposure apparatus, method for cleaning memeber thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
US20070206279A1 (en) 2004-07-09 2007-09-06 Vistec Semiconductor Systems Gmbh Device for inspecting a microscopic component by means of an immersion objective
US7307263B2 (en) 2004-07-14 2007-12-11 Asml Netherlands B.V. Lithographic apparatus, radiation system, contaminant trap, device manufacturing method, and method for trapping contaminants in a contaminant trap
US7224427B2 (en) 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
US20060050351A1 (en) 2004-09-06 2006-03-09 Tatsuhiko Higashiki Liquid immersion optical tool, method for cleaning liquid immersion optical tool, and method for manufacturing semiconductor device
US20080218712A1 (en) 2004-10-05 2008-09-11 Asml Netherlands B. V. Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus
US7385670B2 (en) 2004-10-05 2008-06-10 Asml Netherlands B.V. Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus
WO2006041086A1 (en) 2004-10-13 2006-04-20 Nikon Corporation Exposure device, exposure method, and device manufacturing method
US7224434B2 (en) 2004-10-19 2007-05-29 Canon Kabushiki Kaisha Exposure method
JP2006134999A (en) 2004-11-04 2006-05-25 Sony Corp Immersion-type exposure device and method for cleaning holding base in immersion-type exposure device
US20060103818A1 (en) 2004-11-18 2006-05-18 International Business Machines Corporation Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system
WO2006062065A1 (en) 2004-12-06 2006-06-15 Nikon Corporation Maintenance method, maintenance apparatus, exposure apparatus and device manufacturing method
US20080002162A1 (en) 2004-12-20 2008-01-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060132731A1 (en) 2004-12-20 2006-06-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070127001A1 (en) 2005-12-02 2007-06-07 Asml Netherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US7462850B2 (en) 2005-12-08 2008-12-09 Asml Netherlands B.V. Radical cleaning arrangement for a lithographic apparatus
US7405417B2 (en) 2005-12-20 2008-07-29 Asml Netherlands B.V. Lithographic apparatus having a monitoring device for detecting contamination
US20070146657A1 (en) 2005-12-27 2007-06-28 Asml Netherlands B.V. Lithographic apparatus and method
US20070146658A1 (en) 2005-12-27 2007-06-28 Asml Netherlands B.V. Lithographic apparatus and method
US20070251543A1 (en) 2006-04-28 2007-11-01 Asml Netherlands B.V. Methods to clean a surface, a device manufacturing method, a cleaning assembly, cleaning apparatus, and lithographic apparatus
US20070285631A1 (en) 2006-05-22 2007-12-13 Asml Netherland B.V Lithographic apparatus and lithographic apparatus cleaning method
US20080049201A1 (en) 2006-05-22 2008-02-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
US20080273181A1 (en) 2007-05-04 2008-11-06 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US20080284990A1 (en) 2007-05-04 2008-11-20 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic cleaning method
US20090025753A1 (en) 2007-07-24 2009-01-29 Asml Netherlands B.V. Lithographic Apparatus And Contamination Removal Or Prevention Method
US20090027635A1 (en) 2007-07-24 2009-01-29 Asml Netherlands B.V. Lithographic Apparatus and Contamination Removal or Prevention Method
US20090027636A1 (en) 2007-07-24 2009-01-29 Asml Netherlands B.V. Lithographic Apparatus, Reflective Member And A Method of Irradiating The Underside Of A Liquid Supply System

Non-Patent Citations (46)

* Cited by examiner, † Cited by third party
Title
"Depth-of-Focus Enhancement Using High Refractive Index Layer on the Imaging Layer", IBM Technical Disclosure Bulletin, vol. 27, No. 11, Apr. 1985, p. 6521.
A. Suzuki, "Lithography Advances on Multiple Fronts", EEdesign, EE Times, Jan. 5, 2004.
B. Lin, The kappa3 coefficient in nonparaxial lambda/NA scaling equations for resolution, depth of focus, and immersion lithography, J. Microlith., Microfab., Microsyst. 1(1):7-12 (2002).
B. Lin, The κ3 coefficient in nonparaxial λ/NA scaling equations for resolution, depth of focus, and immersion lithography, J. Microlith., Microfab., Microsyst. 1(1):7-12 (2002).
B.J. Lin, "Drivers, Prospects and Challenges for Immersion Lithography", TSMC, Inc., Sep. 2002.
B.J. Lin, "Proximity Printing Through Liquid", IBM Technical Disclosure Bulletin, vol. 20, No. 11B, Apr. 1978, p. 4997.
B.J. Lin, "The Paths to Subhalf-Micrometer Optical Lithography", SPIE vol. 922, Optical/Laser Microlithography (1988), pp. 256-269.
B.W. Smith et al., "Immersion Optical Lithography at 193nm", Future Fab International, vol. 15, Jul. 11, 2003.
English Translation of JP 06-262005 (dated Sep. 20, 1994). *
European Search Report for EP Application No. 05250691.2, dated May 18, 2005.
G. Owen et al., "1/8 mum Optical Lithography", J. Vac. Sci. Technol. B., vol. 10, No. 6, Nov./Dec. 1992, pp. 3032-3036.
G. Owen et al., "⅛ μm Optical Lithography", J. Vac. Sci. Technol. B., vol. 10, No. 6, Nov./Dec. 1992, pp. 3032-3036.
G.W.W. Stevens, "Reduction of Waste Resulting from Mask Defects", Solid State Technology, Aug. 1978, vol. 21, 008, pp. 68-72.
H. Hata, "The Development of Immersion Exposure Tools", Litho Forum, International Sematech, Los Angeles, Jan. 27-29, 2004, Slide Nos. 1-22.
H. Hogan, "New Semiconductor Lithography Makes a Splash", Photonics Spectra, Photonics TechnologyWorld, Oct. 2003 Edition, pp. 1-3.
H. Kawata et al., "Fabrication of 0.2 mum Fine Patterns Using Optical Projection Lithography with an Oil Immersion Lens", Jpn. J. Appl. Phys. vol. 31 (1992), pp. 4174-4177.
H. Kawata et al., "Optical Projection Lithography using Lenses with Numerical Apertures Greater than Unity", Microelectronic Engineering 9 (1989), pp. 31-36.
H. Kawata et al., "Fabrication of 0.2 μm Fine Patterns Using Optical Projection Lithography with an Oil Immersion Lens", Jpn. J. Appl. Phys. vol. 31 (1992), pp. 4174-4177.
J.A. Hoffnagle et al., "Liquid Immersion Deep-Ultraviolet Interferometric Lithography", J. Vac. Sci. Technol. B., vol. 17, No. 6, Nov./Dec. 1999, pp. 3306-3309.
M. Switkes et al., "Immersion Lithography at 157 nm", J. Vac. Sci. Technol. B., vol. 19, No. 6, Nov./Dec. 2001, pp. 2353-2356.
M. Switkes et al., "Immersion Lithography at 157 nm", MIT Lincoln Lab, Orlando 2001-1, Dec. 17, 2001.
M. Switkes et al., "Immersion Lithography: Optics for the 50 nm Node", 157 Anvers-1, Sep. 4, 2002.
Nikon Precision Europe GmbH, "Investor Relations-Nikon's Real Solutions", May 15, 2003.
Notice of Reasons for Rejection for Japanese Patent Application No. 2005-030038 dated Jun. 2, 2008.
S. Owa and N. Nagasaka, "Potential Performance and Feasibility of Immersion Lithography", NGL Workshop 2003, Jul. 10, 2003, Slide Nos. 1-33.
S. Owa et al., "Advantage and Feasibility of Immersion Lithography", Proc. SPIE 5040 (2003).
S. Owa et al., "Immersion Lithography; its potential performance and issues", SPIE Microlithography 2003, 5040-186, Feb. 27, 2003.
S. Owa et al., "Update on 193nm immersion exposure tool", Litho Forum, International Sematech, Los Angeles, Jan. 27-29, 2004, Slide Nos. 1-51.
T. Matsuyama et al., "Nikon Projection Lens Update", SPIE Microlithography 2004, 5377-65, Mar. 2004.
U.S. Appl. No. 10/367,910, filed Feb. 19, 2003, Suwa et al.
U.S. Appl. No. 10/698,012, filed Oct. 31, 2003, Flagello et al.
U.S. Appl. No. 10/705,783, filed Nov. 12, 2003, Lof et al.
U.S. Appl. No. 10/705,785, filed Nov. 12, 2003, Derksen et al.
U.S. Appl. No. 10/705,804, filed Nov. 12, 2003, De Smit et al.
U.S. Appl. No. 10/705,805, filed Nov. 12, 2003, Lof et al.
U.S. Appl. No. 10/705,816, filed Nov. 12, 2003, Lof et al.
U.S. Appl. No. 10/715,116, filed Nov. 18, 2003, Bleeker.
U.S. Appl. No. 10/719,683, filed Nov. 24, 2003, Streekerk et al.
U.S. Appl. No. 10/724,402, filed Dec. 1, 2003, Simon et al.
U.S. Appl. No. 10/743,266, filed Dec. 23, 2003, Mulkens et al.
U.S. Appl. No. 10/743,271, filed Dec. 23, 2003, Van Santen et al.
U.S. Appl. No. 10/773,461, filed Feb. 9, 2004, Duineveld et al.
U.S. Appl. No. 10/775,326, filed Feb. 11, 2004, Dierichs.
U.S. Appl. No. 10/820,227, filed Apr. 8, 2004, De Smit.
U.S. Appl. No. 10/857,614, filed Jun. 1, 2004, Lof et al.
U.S. Appl. No. 10/860,662, filed Jun. 4, 2004, De Smit.

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DE602005002155D1 (en) 2007-10-11
EP1562080B1 (en) 2007-08-29

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