USRE45365E1 - Semiconductor device having a vertically-oriented conductive region that electrically connects a transistor structure to a substrate - Google Patents
Semiconductor device having a vertically-oriented conductive region that electrically connects a transistor structure to a substrate Download PDFInfo
- Publication number
- USRE45365E1 USRE45365E1 US14/019,375 US201314019375A USRE45365E US RE45365 E1 USRE45365 E1 US RE45365E1 US 201314019375 A US201314019375 A US 201314019375A US RE45365 E USRE45365 E US RE45365E
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/90—MOSFET type gate sidewall insulating spacer
Abstract
Description
Claims (39)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US12/335,730 US7902601B2 (en) | 2005-02-15 | 2008-12-16 | Semiconductor device having deep trench charge compensation regions and method |
US13/659,077 USRE44547E1 (en) | 2005-02-15 | 2012-10-24 | Semiconductor device having deep trench charge compensation regions and method |
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US20140264574A1 (en) * | 2013-03-15 | 2014-09-18 | Semiconductor Components Industries, Llc | Electronic device including vertical conductive regions and a process of forming the same |
US9466698B2 (en) * | 2013-03-15 | 2016-10-11 | Semiconductor Components Industries, Llc | Electronic device including vertical conductive regions and a process of forming the same |
Also Published As
Publication number | Publication date |
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USRE44547E1 (en) | 2013-10-22 |
US20090096021A1 (en) | 2009-04-16 |
US20070034947A1 (en) | 2007-02-15 |
US7902601B2 (en) | 2011-03-08 |
US7482220B2 (en) | 2009-01-27 |
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