USRE46136E1 - Heating apparatus with enhanced thermal uniformity and method for making thereof - Google Patents
Heating apparatus with enhanced thermal uniformity and method for making thereof Download PDFInfo
- Publication number
- USRE46136E1 USRE46136E1 US13/790,423 US201313790423A USRE46136E US RE46136 E1 USRE46136 E1 US RE46136E1 US 201313790423 A US201313790423 A US 201313790423A US RE46136 E USRE46136 E US RE46136E
- Authority
- US
- United States
- Prior art keywords
- substrate
- base support
- temperature
- layer
- tpg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Abstract
Description
Claims (18)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/790,423 USRE46136E1 (en) | 2006-09-19 | 2013-03-08 | Heating apparatus with enhanced thermal uniformity and method for making thereof |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US82615006P | 2006-09-19 | 2006-09-19 | |
US11/549,968 US7901509B2 (en) | 2006-09-19 | 2006-10-16 | Heating apparatus with enhanced thermal uniformity and method for making thereof |
US13/790,423 USRE46136E1 (en) | 2006-09-19 | 2013-03-08 | Heating apparatus with enhanced thermal uniformity and method for making thereof |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/549,968 Reissue US7901509B2 (en) | 2006-09-19 | 2006-10-16 | Heating apparatus with enhanced thermal uniformity and method for making thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
USRE46136E1 true USRE46136E1 (en) | 2016-09-06 |
Family
ID=56878019
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/549,968 Ceased US7901509B2 (en) | 2006-09-19 | 2006-10-16 | Heating apparatus with enhanced thermal uniformity and method for making thereof |
US13/790,423 Active 2029-04-05 USRE46136E1 (en) | 2006-09-19 | 2013-03-08 | Heating apparatus with enhanced thermal uniformity and method for making thereof |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/549,968 Ceased US7901509B2 (en) | 2006-09-19 | 2006-10-16 | Heating apparatus with enhanced thermal uniformity and method for making thereof |
Country Status (1)
Country | Link |
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US (2) | US7901509B2 (en) |
Cited By (2)
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---|---|---|---|---|
US20190371688A1 (en) * | 2017-02-23 | 2019-12-05 | Mitsubishi Electric Corporation | Semiconductor apparatus |
US10898949B2 (en) | 2017-05-05 | 2021-01-26 | Glassy Metals Llc | Techniques and apparatus for electromagnetically stirring a melt material |
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US7238623B2 (en) * | 2004-10-06 | 2007-07-03 | Texas Instruments Incorporated | Versatile system for self-aligning deposition equipment |
GB2432830A (en) * | 2005-12-02 | 2007-06-06 | Morganite Elect Carbon | Formation of thermally anisotropic carbon material |
US7901509B2 (en) * | 2006-09-19 | 2011-03-08 | Momentive Performance Materials Inc. | Heating apparatus with enhanced thermal uniformity and method for making thereof |
WO2008123111A1 (en) * | 2007-03-20 | 2008-10-16 | Canon Anelva Corporation | Substrate heat treatment device and substrate heat treatment method |
US8347502B2 (en) * | 2007-12-28 | 2013-01-08 | Ge Intelligent Platforms, Inc. | Heat sink and method of forming a heatsink using a wedge-lock system |
US10192760B2 (en) * | 2010-07-29 | 2019-01-29 | Eugene Technology Co., Ltd. | Substrate supporting unit, substrate processing apparatus, and method of manufacturing substrate supporting unit |
TWI475594B (en) * | 2008-05-19 | 2015-03-01 | Entegris Inc | Electrostatic chuck |
US8512806B2 (en) * | 2008-08-12 | 2013-08-20 | Momentive Performance Materials Inc. | Large volume evaporation source |
US20100071614A1 (en) * | 2008-09-22 | 2010-03-25 | Momentive Performance Materials, Inc. | Fluid distribution apparatus and method of forming the same |
US9520314B2 (en) * | 2008-12-19 | 2016-12-13 | Applied Materials, Inc. | High temperature electrostatic chuck bonding adhesive |
US8432440B2 (en) * | 2009-02-27 | 2013-04-30 | General Electric Company | System and method for adjusting engine parameters based on flame visualization |
US8861170B2 (en) | 2009-05-15 | 2014-10-14 | Entegris, Inc. | Electrostatic chuck with photo-patternable soft protrusion contact surface |
US20110061812A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
US8481896B2 (en) * | 2009-12-08 | 2013-07-09 | Phillip G. Quinton, Jr. | Heater plate with embedded hyper-conductive thermal diffusion layer for increased temperature rating and uniformity |
WO2011149918A2 (en) * | 2010-05-28 | 2011-12-01 | Entegris, Inc. | High surface resistivity electrostatic chuck |
JP5656623B2 (en) * | 2010-12-28 | 2015-01-21 | トヨタ自動車株式会社 | SiC single crystal manufacturing apparatus and manufacturing method |
US20120264202A1 (en) * | 2011-03-23 | 2012-10-18 | Walker Christopher I | System for performing polymerase chain reaction nucleic acid amplification |
JP2013008949A (en) * | 2011-05-26 | 2013-01-10 | Hitachi Kokusai Electric Inc | Substrate placement board, substrate processing device, and manufacturing method of semiconductor device |
US8893527B1 (en) * | 2011-07-21 | 2014-11-25 | WD Media, LLC | Single surface annealing of glass disks |
US9196513B2 (en) * | 2011-08-30 | 2015-11-24 | Watlow Electric Manufacturing Company | System and method for controlling a thermal array |
JP6017781B2 (en) * | 2011-12-07 | 2016-11-02 | 新光電気工業株式会社 | Substrate temperature adjustment fixing device and manufacturing method thereof |
JP5973731B2 (en) * | 2012-01-13 | 2016-08-23 | 東京エレクトロン株式会社 | Plasma processing apparatus and heater temperature control method |
US9630231B2 (en) | 2012-01-27 | 2017-04-25 | Nuvectra Corporation | Superplastic forming for titanium implant enclosures |
US9981137B2 (en) | 2012-01-27 | 2018-05-29 | Nuvectra Corporation | Heat dispersion for implantable medical devices |
US10396414B2 (en) | 2012-08-31 | 2019-08-27 | Avl Powertrain Engineering, Inc. | High power battery cells having improved cooling |
KR101392379B1 (en) * | 2013-03-27 | 2014-05-12 | 주식회사 유진테크 | Apparatus for processing bubstrate |
CN104576437A (en) * | 2013-10-28 | 2015-04-29 | 沈阳芯源微电子设备有限公司 | Axial fit type over-temperature protection device |
JP5871885B2 (en) * | 2013-11-13 | 2016-03-01 | エスペック株式会社 | Contact test apparatus and environmental test method |
CN104752130A (en) * | 2013-12-30 | 2015-07-01 | 中微半导体设备(上海)有限公司 | Plasma-processing device and electrostatic chuck thereof |
JP6219229B2 (en) * | 2014-05-19 | 2017-10-25 | 東京エレクトロン株式会社 | Heater feeding mechanism |
WO2015198942A1 (en) | 2014-06-23 | 2015-12-30 | 日本特殊陶業株式会社 | Electrostatic chuck |
US20170051407A1 (en) * | 2015-08-17 | 2017-02-23 | Applied Materials, Inc. | Heating Source For Spatial Atomic Layer Deposition |
US10154542B2 (en) | 2015-10-19 | 2018-12-11 | Watlow Electric Manufacturing Company | Composite device with cylindrical anisotropic thermal conductivity |
US10570257B2 (en) | 2015-11-16 | 2020-02-25 | Applied Materials, Inc. | Copolymerized high temperature bonding component |
US20170325327A1 (en) * | 2016-04-07 | 2017-11-09 | Massachusetts Institute Of Technology | Printed circuit board for high power components |
US11255613B2 (en) | 2016-05-10 | 2022-02-22 | Momentive Performance Materials Quartz, Inc. | Thermal pyrolytic graphite tube device for directional thermal management |
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Citations (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5343022A (en) | 1992-09-29 | 1994-08-30 | Advanced Ceramics Corporation | Pyrolytic boron nitride heating unit |
US5566043A (en) * | 1993-12-27 | 1996-10-15 | Shin-Etsu Chemical Co., Ltd. | Ceramic electrostatic chuck with built-in heater |
US5668524A (en) | 1994-02-09 | 1997-09-16 | Kyocera Corporation | Ceramic resistor and electrostatic chuck having an aluminum nitride crystal phase |
US5693581A (en) | 1995-10-03 | 1997-12-02 | Advanced Ceramics Corporation | Method of manufacturing a pyrolytic boron nitride compact |
US5850071A (en) | 1996-02-16 | 1998-12-15 | Kokusai Electric Co., Ltd. | Substrate heating equipment for use in a semiconductor fabricating apparatus |
US6072163A (en) * | 1998-03-05 | 2000-06-06 | Fsi International Inc. | Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate |
US6147334A (en) * | 1998-06-30 | 2000-11-14 | Marchi Associates, Inc. | Laminated paddle heater and brazing process |
US6215661B1 (en) * | 1999-08-11 | 2001-04-10 | Motorola, Inc. | Heat spreader |
US20010020671A1 (en) * | 2000-02-04 | 2001-09-13 | Fank Ansorge | Focal surface and detector for opto-electronic imaging systems, manufacturing method and opto-electronic imaging system |
US6292346B1 (en) | 1998-07-24 | 2001-09-18 | Ngk Insulators, Ltd. | Equipment for holding a semiconductor wafer, a method for manufacturing the same, and a method for using the same |
US6324755B1 (en) * | 1999-06-17 | 2001-12-04 | Raytheon Company | Solid interface module |
US6497734B1 (en) | 2002-01-02 | 2002-12-24 | Novellus Systems, Inc. | Apparatus and method for enhanced degassing of semiconductor wafers for increased throughput |
US20030019858A1 (en) * | 2001-07-27 | 2003-01-30 | Applied Materials, Inc. | Ceramic heater with thermal pipe for improving temperature uniformity, efficiency and robustness and manufacturing method |
US6534751B2 (en) * | 2000-02-28 | 2003-03-18 | Kyocera Corporation | Wafer heating apparatus and ceramic heater, and method for producing the same |
US6563686B2 (en) | 2001-03-19 | 2003-05-13 | Applied Materials, Inc. | Pedestal assembly with enhanced thermal conductivity |
US20040035847A1 (en) | 1998-11-20 | 2004-02-26 | Arnon Gat | Fast heating and cooling apparatus for semiconductor wafers |
US20040074899A1 (en) | 2002-10-21 | 2004-04-22 | General Electric Company | Encapsulated graphite heater and process |
US6765178B2 (en) | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
WO2004068541A2 (en) | 2003-01-17 | 2004-08-12 | General Electric Company | Wafer handling apparatus |
US20050064230A1 (en) * | 2003-09-19 | 2005-03-24 | General Electric Company | Bulk high thermal conductivity feedstock and method of making thereof |
US6936102B1 (en) * | 1999-08-02 | 2005-08-30 | Tokyo Electron Limited | SiC material, semiconductor processing equipment and method of preparing SiC material therefor |
US20060076109A1 (en) | 2004-10-07 | 2006-04-13 | John Holland | Method and apparatus for controlling temperature of a substrate |
WO2006073947A2 (en) | 2004-12-30 | 2006-07-13 | Lam Research Corporation | Apparatus for spatial and temporal control of temperature on a substrate |
US20060228571A1 (en) * | 2003-01-14 | 2006-10-12 | Tadahiro Ohmi | Member of apparatus for plasma treatment, member of treating apparatus, apparatus for plasma treatment, treating apparatus and method of plasma treatment |
US20070039942A1 (en) * | 2005-08-16 | 2007-02-22 | Applied Materials, Inc. | Active cooling substrate support |
US20070160507A1 (en) * | 2006-01-12 | 2007-07-12 | Asm Japan K.K. | Semiconductor processing apparatus with lift pin structure |
US20080066676A1 (en) * | 2006-09-19 | 2008-03-20 | General Electric Company | Heating apparatus with enhanced thermal uniformity and method for making thereof |
US20090235866A1 (en) * | 2008-03-21 | 2009-09-24 | Ngk Insulators, Ltd. | Ceramic heater |
US20100155016A1 (en) * | 2008-12-23 | 2010-06-24 | General Electric Company | Combined surface cooler and acoustic absorber for turbomachines |
US20110132896A1 (en) * | 2009-12-08 | 2011-06-09 | Therm-X Of California | Heater plate with embedded hyper-conductive thermal diffusion layer for increased temperature rating and uniformity |
US20110307089A1 (en) * | 2003-03-17 | 2011-12-15 | Tokyo Electron Limited | Method and system for performing a chemical oxide removal process |
US20140209242A1 (en) * | 2013-01-25 | 2014-07-31 | Applied Materials, Inc. | Substrate processing chamber components incorporating anisotropic materials |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5309543A (en) * | 1992-11-23 | 1994-05-03 | Ceramoptec, Inc. | Method of making infrared crystalline fiber and product |
-
2006
- 2006-10-16 US US11/549,968 patent/US7901509B2/en not_active Ceased
-
2013
- 2013-03-08 US US13/790,423 patent/USRE46136E1/en active Active
Patent Citations (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5343022A (en) | 1992-09-29 | 1994-08-30 | Advanced Ceramics Corporation | Pyrolytic boron nitride heating unit |
US5566043A (en) * | 1993-12-27 | 1996-10-15 | Shin-Etsu Chemical Co., Ltd. | Ceramic electrostatic chuck with built-in heater |
US5777543A (en) | 1994-01-09 | 1998-07-07 | Kyocera Corporation | Ceramic resistor and electrostatic chuck having an aluminum nitride crystal phase |
US5668524A (en) | 1994-02-09 | 1997-09-16 | Kyocera Corporation | Ceramic resistor and electrostatic chuck having an aluminum nitride crystal phase |
US5693581A (en) | 1995-10-03 | 1997-12-02 | Advanced Ceramics Corporation | Method of manufacturing a pyrolytic boron nitride compact |
US5850071A (en) | 1996-02-16 | 1998-12-15 | Kokusai Electric Co., Ltd. | Substrate heating equipment for use in a semiconductor fabricating apparatus |
US6072163A (en) * | 1998-03-05 | 2000-06-06 | Fsi International Inc. | Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate |
US6147334A (en) * | 1998-06-30 | 2000-11-14 | Marchi Associates, Inc. | Laminated paddle heater and brazing process |
US6292346B1 (en) | 1998-07-24 | 2001-09-18 | Ngk Insulators, Ltd. | Equipment for holding a semiconductor wafer, a method for manufacturing the same, and a method for using the same |
US20040035847A1 (en) | 1998-11-20 | 2004-02-26 | Arnon Gat | Fast heating and cooling apparatus for semiconductor wafers |
US6324755B1 (en) * | 1999-06-17 | 2001-12-04 | Raytheon Company | Solid interface module |
US6936102B1 (en) * | 1999-08-02 | 2005-08-30 | Tokyo Electron Limited | SiC material, semiconductor processing equipment and method of preparing SiC material therefor |
US6215661B1 (en) * | 1999-08-11 | 2001-04-10 | Motorola, Inc. | Heat spreader |
US20010020671A1 (en) * | 2000-02-04 | 2001-09-13 | Fank Ansorge | Focal surface and detector for opto-electronic imaging systems, manufacturing method and opto-electronic imaging system |
US6534751B2 (en) * | 2000-02-28 | 2003-03-18 | Kyocera Corporation | Wafer heating apparatus and ceramic heater, and method for producing the same |
US6765178B2 (en) | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
US6563686B2 (en) | 2001-03-19 | 2003-05-13 | Applied Materials, Inc. | Pedestal assembly with enhanced thermal conductivity |
US20030019858A1 (en) * | 2001-07-27 | 2003-01-30 | Applied Materials, Inc. | Ceramic heater with thermal pipe for improving temperature uniformity, efficiency and robustness and manufacturing method |
US6497734B1 (en) | 2002-01-02 | 2002-12-24 | Novellus Systems, Inc. | Apparatus and method for enhanced degassing of semiconductor wafers for increased throughput |
US20040074899A1 (en) | 2002-10-21 | 2004-04-22 | General Electric Company | Encapsulated graphite heater and process |
US20060228571A1 (en) * | 2003-01-14 | 2006-10-12 | Tadahiro Ohmi | Member of apparatus for plasma treatment, member of treating apparatus, apparatus for plasma treatment, treating apparatus and method of plasma treatment |
WO2004068541A2 (en) | 2003-01-17 | 2004-08-12 | General Electric Company | Wafer handling apparatus |
US20040173161A1 (en) * | 2003-01-17 | 2004-09-09 | General Electric Company | Wafer handling apparatus and method of manufacturing thereof |
US20110307089A1 (en) * | 2003-03-17 | 2011-12-15 | Tokyo Electron Limited | Method and system for performing a chemical oxide removal process |
US20050064230A1 (en) * | 2003-09-19 | 2005-03-24 | General Electric Company | Bulk high thermal conductivity feedstock and method of making thereof |
US20060076109A1 (en) | 2004-10-07 | 2006-04-13 | John Holland | Method and apparatus for controlling temperature of a substrate |
WO2006073947A2 (en) | 2004-12-30 | 2006-07-13 | Lam Research Corporation | Apparatus for spatial and temporal control of temperature on a substrate |
US20070039942A1 (en) * | 2005-08-16 | 2007-02-22 | Applied Materials, Inc. | Active cooling substrate support |
US20070160507A1 (en) * | 2006-01-12 | 2007-07-12 | Asm Japan K.K. | Semiconductor processing apparatus with lift pin structure |
US20080066676A1 (en) * | 2006-09-19 | 2008-03-20 | General Electric Company | Heating apparatus with enhanced thermal uniformity and method for making thereof |
US7901509B2 (en) * | 2006-09-19 | 2011-03-08 | Momentive Performance Materials Inc. | Heating apparatus with enhanced thermal uniformity and method for making thereof |
US20090235866A1 (en) * | 2008-03-21 | 2009-09-24 | Ngk Insulators, Ltd. | Ceramic heater |
US20100155016A1 (en) * | 2008-12-23 | 2010-06-24 | General Electric Company | Combined surface cooler and acoustic absorber for turbomachines |
US20110132896A1 (en) * | 2009-12-08 | 2011-06-09 | Therm-X Of California | Heater plate with embedded hyper-conductive thermal diffusion layer for increased temperature rating and uniformity |
US20140209242A1 (en) * | 2013-01-25 | 2014-07-31 | Applied Materials, Inc. | Substrate processing chamber components incorporating anisotropic materials |
Non-Patent Citations (2)
Title |
---|
English Translation of the Notice of Preliminary Rejection (Office Action), Korean Patent App. No. 2006-0123692, based on U.S. Appl. Nos. 60/826,931 and 11/549,968. |
TC1050 Composite* by Momentive, cited in U.S. Pat. No. 6,072,163 A Nov. 2000. * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190371688A1 (en) * | 2017-02-23 | 2019-12-05 | Mitsubishi Electric Corporation | Semiconductor apparatus |
US11232991B2 (en) * | 2017-02-23 | 2022-01-25 | Mitsubishi Electric Corporation | Semiconductor apparatus |
US10898949B2 (en) | 2017-05-05 | 2021-01-26 | Glassy Metals Llc | Techniques and apparatus for electromagnetically stirring a melt material |
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US7901509B2 (en) | 2011-03-08 |
US20080066676A1 (en) | 2008-03-20 |
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