WO1991006976A3 - Process for producing an aluminum oxide layer on various substrates - Google Patents
Process for producing an aluminum oxide layer on various substrates Download PDFInfo
- Publication number
- WO1991006976A3 WO1991006976A3 PCT/US1990/006391 US9006391W WO9106976A3 WO 1991006976 A3 WO1991006976 A3 WO 1991006976A3 US 9006391 W US9006391 W US 9006391W WO 9106976 A3 WO9106976 A3 WO 9106976A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- aluminum oxide
- producing
- arsenide
- aluminum
- water vapor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US43293189A | 1989-11-07 | 1989-11-07 | |
US432,931 | 1989-11-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1991006976A2 WO1991006976A2 (en) | 1991-05-16 |
WO1991006976A3 true WO1991006976A3 (en) | 1991-08-08 |
Family
ID=23718150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1990/006391 WO1991006976A2 (en) | 1989-11-07 | 1990-11-06 | Process for producing an aluminum oxide layer on various substrates |
Country Status (2)
Country | Link |
---|---|
AU (1) | AU6964591A (en) |
WO (1) | WO1991006976A2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9048314B2 (en) | 2005-02-23 | 2015-06-02 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
US9190518B2 (en) | 2004-10-25 | 2015-11-17 | Intel Corporation | Nonplanar device with thinned lower body portion and method of fabrication |
US9224754B2 (en) | 2008-06-23 | 2015-12-29 | Intel Corporation | Stress in trigate devices using complimentary gate fill materials |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7485503B2 (en) * | 2005-11-30 | 2009-02-03 | Intel Corporation | Dielectric interface for group III-V semiconductor device |
US8183556B2 (en) | 2005-12-15 | 2012-05-22 | Intel Corporation | Extreme high mobility CMOS logic |
US7851780B2 (en) | 2006-08-02 | 2010-12-14 | Intel Corporation | Semiconductor buffer architecture for III-V devices on silicon substrates |
US8143646B2 (en) | 2006-08-02 | 2012-03-27 | Intel Corporation | Stacking fault and twin blocking barrier for integrating III-V on Si |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0008898A1 (en) * | 1978-08-28 | 1980-03-19 | Western Electric Company, Incorporated | Method of forming an oxide layer on a group III-V compound |
US4291327A (en) * | 1978-08-28 | 1981-09-22 | Bell Telephone Laboratories, Incorporated | MOS Devices |
-
1990
- 1990-11-06 AU AU69645/91A patent/AU6964591A/en not_active Abandoned
- 1990-11-06 WO PCT/US1990/006391 patent/WO1991006976A2/en unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0008898A1 (en) * | 1978-08-28 | 1980-03-19 | Western Electric Company, Incorporated | Method of forming an oxide layer on a group III-V compound |
US4291327A (en) * | 1978-08-28 | 1981-09-22 | Bell Telephone Laboratories, Incorporated | MOS Devices |
Non-Patent Citations (1)
Title |
---|
Journal Vacuum Science & Technology, vol. 20, no. 3, March 1982, American Vacuum Society, J.A. Taylor: "An XPS study of the oxidation of AlAs films grown by MBE", pages 751-755 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9190518B2 (en) | 2004-10-25 | 2015-11-17 | Intel Corporation | Nonplanar device with thinned lower body portion and method of fabrication |
US9048314B2 (en) | 2005-02-23 | 2015-06-02 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
US9368583B2 (en) | 2005-02-23 | 2016-06-14 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
US9224754B2 (en) | 2008-06-23 | 2015-12-29 | Intel Corporation | Stress in trigate devices using complimentary gate fill materials |
US9450092B2 (en) | 2008-06-23 | 2016-09-20 | Intel Corporation | Stress in trigate devices using complimentary gate fill materials |
Also Published As
Publication number | Publication date |
---|---|
WO1991006976A2 (en) | 1991-05-16 |
AU6964591A (en) | 1991-05-31 |
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