WO1993018597A1 - Binary phase shift keying modulation system or frequency multiplier - Google Patents

Binary phase shift keying modulation system or frequency multiplier Download PDF

Info

Publication number
WO1993018597A1
WO1993018597A1 PCT/US1992/001988 US9201988W WO9318597A1 WO 1993018597 A1 WO1993018597 A1 WO 1993018597A1 US 9201988 W US9201988 W US 9201988W WO 9318597 A1 WO9318597 A1 WO 9318597A1
Authority
WO
WIPO (PCT)
Prior art keywords
leg
induction means
mod
output
circuit
Prior art date
Application number
PCT/US1992/001988
Other languages
French (fr)
Inventor
Hugh Britton Sanderford, Jr.
Original Assignee
Sanderford Hugh Britton Jr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanderford Hugh Britton Jr filed Critical Sanderford Hugh Britton Jr
Priority to EP92915383A priority Critical patent/EP0630538A4/en
Publication of WO1993018597A1 publication Critical patent/WO1993018597A1/en

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L27/00—Modulated-carrier systems
    • H04L27/18—Phase-modulated carrier systems, i.e. using phase-shift keying
    • H04L27/20—Modulator circuits; Transmitter circuits
    • H04L27/2032—Modulator circuits; Transmitter circuits for discrete phase modulation, e.g. in which the phase of the carrier is modulated in a nominally instantaneous manner
    • H04L27/2053—Modulator circuits; Transmitter circuits for discrete phase modulation, e.g. in which the phase of the carrier is modulated in a nominally instantaneous manner using more than one carrier, e.g. carriers with different phases
    • H04L27/206—Modulator circuits; Transmitter circuits for discrete phase modulation, e.g. in which the phase of the carrier is modulated in a nominally instantaneous manner using more than one carrier, e.g. carriers with different phases using a pair of orthogonal carriers, e.g. quadrature carriers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C1/00—Amplitude modulation
    • H03C1/52—Modulators in which carrier or one sideband is wholly or partially suppressed
    • H03C1/54—Balanced modulators, e.g. bridge type, ring type or double balanced type
    • H03C1/542—Balanced modulators, e.g. bridge type, ring type or double balanced type comprising semiconductor devices with at least three electrodes
    • H03C1/545—Balanced modulators, e.g. bridge type, ring type or double balanced type comprising semiconductor devices with at least three electrodes using bipolar transistors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/69—Spread spectrum techniques
    • H04B1/707—Spread spectrum techniques using direct sequence modulation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L27/00—Modulated-carrier systems
    • H04L27/18—Phase-modulated carrier systems, i.e. using phase-shift keying
    • H04L27/20—Modulator circuits; Transmitter circuits
    • H04L27/2032—Modulator circuits; Transmitter circuits for discrete phase modulation, e.g. in which the phase of the carrier is modulated in a nominally instantaneous manner
    • H04L27/2053—Modulator circuits; Transmitter circuits for discrete phase modulation, e.g. in which the phase of the carrier is modulated in a nominally instantaneous manner using more than one carrier, e.g. carriers with different phases
    • H04L27/2057—Modulator circuits; Transmitter circuits for discrete phase modulation, e.g. in which the phase of the carrier is modulated in a nominally instantaneous manner using more than one carrier, e.g. carriers with different phases with a separate carrier for each phase state

Definitions

  • the present invention relates to modulators, and more particularly to an improved spread spectrum BPSK, or Binary Phase Shift Keying, Modulation system designed for providing gain, low cost and suppressed carrier output, as well as compatibility with CMOS low power logic modulation drive circuitry.
  • the present invention also teaches a Frequency Multiplier circuit, which is much less costly than tradition ⁇ al designs currently known.
  • the present system teaches a new, superior, and less costly BPSK modulator and/or frequency multiplier than that contemplated by the prior art, providing a less complicated system while outputting increased gain over prior art modulators.
  • Previous spread spectrum BPSK modulators required conventional balance mixers to produce carrier suppression. These conventional modulators utilized either 1) a complex transistor array in conjunction with a transformer tunable with a potonciometer or 2) two center tapped transformers and four diodes, which arrangement required a high level drive circuit to modulate it, typically +7 to +15 dBM.
  • a low cost spread spectrum modulator is an essential component of a commercially viable spread spectrum communica ⁇ tions system. While a low cost, high performance modulator has not been contemplated until now, the present invention describes the ideal modulator, designed specifically for Binary Phase Shift Keying or BPSK.
  • the present invention is designed to provide a low cost, efficient, quality and reliable modulation system having sufficiently high BPSK modulation rate, coupled with the suppressed carrier output needed in spread spectrum communi ⁇ cation systems and the like.
  • the present invention provides a BPSK modulator utilizing only one transformer having the capability of adjusting for maximum carrier suppression, in conjunction with two bipolar transistors, which allows the modulator to be driven from the
  • CMOS circuitry -10 dBM low power logic levels found in CMOS circuitry -10 dBM.
  • the present invention in its preferred embodiment produces eight dB of gain, much superior in performance over the prior art, which performs at a six dB signal loss.
  • the present invention is not limited to utilizing two bipolar transistors as discussed supra and may utilize in an equivalent fashion any device which provides sufficient gain at the desired frequency or operation, as well as having sufficiently fast switching capabilities.
  • FET field effect transistors
  • digital logic gates which are biased into a linear region utilizing common techniques.
  • FET's field effect transistors
  • digital logic gates which are biased into a linear region utilizing common techniques.
  • FET's field effect transistors
  • These devices may be incorporated into the system of the present invention, replacing in effect the transistors, utilizing common engineering techniques.
  • the present invention in an alternative use, may be utilized as a frequency multiplier.
  • the transistor, or its equivalent is adequately fast, for example, F t >lGHZ, the system may be utilized to create at its output a higher frequency harmonic.
  • Figure 1 is a Schematic Illustration of the preferred embodiment of the BPSK Modulator of the present invention.
  • Figure 2 is Schematic Illustration of an alternative, less costly embodiment of the BPSK Modulator of Figure l.
  • the described modulator uses only one transformer which also adjusts for carrier suppression and two transistors, and as such can be driven from low power CMOS logic levels producing a full eight dB of gain.
  • BPSK modulation seeks to alternate a carrier between a 0 degree phase shift and a 180 degree phase shift, the phase shift of the carrier providing the modulation.
  • the outputs of the transformer "A”, when the center tap "B" is grounded are inherently at opposite phases, 0 degrees and 180 de ⁇ grees.
  • Transistor C and D can then be alternately selected by biasing the MOD + or MOD - inputs to on.
  • either the 0 degree phase shift or 180 degree phase shift can be selected, which provides BPSK modulation with 8 dB of gain.
  • An alternative embodiment to the present invention obviates with the need for the costly center tap in the transformer, further simplifying the present design.
  • This circuit is based upon the premise that an inductor at resonance has outputs 180 degrees out of phase, producing 0 and 180 degrees outputs. The 0 degree and 180 degree outputs are selected using the same MOD -, MOD + biasing as de ⁇ scribed above.
  • both capacitors G and F must be configured to resonate in conjunction with the carrier frequency to be modulated.
  • the resonate point in this circuit may be fine adjusted by varying the transforme ⁇ r's inductance, by turning the tunable core or slug of transformer E.
  • capacitor G can be eliminated and transformer E must be only resonate with capacitor F. Fine tuning is again achieved by adjusting the slug or core of transformer E. The value of capacitor F must be such that it resonates with transformer E at the frequency to be modulated.
  • Both embodiments of the invention perform identically when properly configured and can produce excellent BPSK spread spectrum modulation with adjustable carrier suppres ⁇ sion.
  • the value of the resonate capacitors to be used is dependent upon the transformer inductance and carrier frequency. In the present invention, if a 1 1/2 primary turn to 21/2 secondary turn transformer is used with a carrier frequency of 300 MHz, then practical resonate
  • the transformer turns ratio is selected to match the impedance of the driving carrier CKT to the input impedance of the gain/phase selection transistors.
  • the overall 8 dB of gain realized is a product of sums of both gain and losses of the entire circuit.
  • the trans ⁇ former produces 2 to 4 dB of loss
  • the coupling capacitors produce 1 dB of loss
  • the transistors provide 12 to 13 dB of gain.
  • the present invention's design is not limited to use in BPSK modulation.
  • the present inven ⁇ tion in an alternative use, may be utilized as a frequency multiplier.
  • FET field effect transistor
  • digital logic gates which are biased into a linear region utilizing common techniques.
  • FET's field effect transistors
  • digital logic gates which are biased into a linear region utilizing common techniques.
  • FET's field effect transistors
  • These devices may be incorporated into the system of the present invention, replacing in effect the transistors, utilizing common engineering techniques.

Abstract

A low cost spread spectrum modulator for BPSK, or Binary Phase Shift Keying capable of outputting the high modulation rate and suppressed carrier output needed in spread spectrum systems. The present invention provides high quality BPSK modulation without the double balance mixers as required in the prior art, thereby dispensing with the necessity of complex transistor/potentiometer or diode/transformer arrangements. The present invention provides BPSK modulation utilizing only one transformer (A), which can be adjusted for carrier suppression and two transistors (C, D), FET's, or digital logic gates or the like, allowing the present system to be driven from low power CMOS logic levels, yet producing eight db of gain. The present invention may also be utilized as a frequency multiplier, with the utilization of the appropriately high frequency transistor, FET, digital logic gate, or the like.

Description

Binary Phase Shift Keying Modulation System or Frequency Multiplier
1. Field of Invention
The present invention relates to modulators, and more particularly to an improved spread spectrum BPSK, or Binary Phase Shift Keying, Modulation system designed for providing gain, low cost and suppressed carrier output, as well as compatibility with CMOS low power logic modulation drive circuitry. The present invention also teaches a Frequency Multiplier circuit, which is much less costly than tradition¬ al designs currently known.
The present system teaches a new, superior, and less costly BPSK modulator and/or frequency multiplier than that contemplated by the prior art, providing a less complicated system while outputting increased gain over prior art modulators.
2. Prior Art & General Background
Previous spread spectrum BPSK modulators required conventional balance mixers to produce carrier suppression. These conventional modulators utilized either 1) a complex transistor array in conjunction with a transformer tunable with a potonciometer or 2) two center tapped transformers and four diodes, which arrangement required a high level drive circuit to modulate it, typically +7 to +15 dBM.
- 1 - Besides the greater expense, increased complexity thereby contributing the probability of failure, and incom¬ patibility with low power -10 dB CMOS logic drive circuitry, the prior art modulators typically produced on the order of six dB of signal loss, resulting in considerably less satisfactory overall performance when compared to the present invention.
3. General/ Summary Discussion of the Invention
A low cost spread spectrum modulator is an essential component of a commercially viable spread spectrum communica¬ tions system. While a low cost, high performance modulator has not been contemplated until now, the present invention describes the ideal modulator, designed specifically for Binary Phase Shift Keying or BPSK.
The present invention is designed to provide a low cost, efficient, quality and reliable modulation system having sufficiently high BPSK modulation rate, coupled with the suppressed carrier output needed in spread spectrum communi¬ cation systems and the like.
Unlike the prior art, which required balance mixers of the sort discussed in the background section supra, the present invention provides a BPSK modulator utilizing only one transformer having the capability of adjusting for maximum carrier suppression, in conjunction with two bipolar transistors, which allows the modulator to be driven from the
-2 - low power logic levels found in CMOS circuitry -10 dBM. The present invention in its preferred embodiment produces eight dB of gain, much superior in performance over the prior art, which performs at a six dB signal loss.
Further, the present invention is not limited to utilizing two bipolar transistors as discussed supra and may utilize in an equivalent fashion any device which provides sufficient gain at the desired frequency or operation, as well as having sufficiently fast switching capabilities.
For example, other acceptable, equivalent devices which may be utilized in place of the two transistors in the present invention may include high frequency field effect transistors (FET's) , or digital logic gates, which are biased into a linear region utilizing common techniques. These devices may be incorporated into the system of the present invention, replacing in effect the transistors, utilizing common engineering techniques.
The present invention, in an alternative use, may be utilized as a frequency multiplier. For example, if the transistor, or its equivalent, is adequately fast, for example, Ft>lGHZ, the system may be utilized to create at its output a higher frequency harmonic.
As is known in the art, it is a common radio design practice to utilize a non-linear device such as a diode, transistor, or the like to perform frequency multiplication. This is desirable because only lower frequency crystals are
-3 - readily available, and as such, the lower frequency must then be translated into the higher, desired frequency.
When the modulation transistor arrangement is addition¬ ally utilized in the present invention in the frequency modulation capacity, less subsequent stages are required. This serves to lower both the cost and complexity of a frequency multiplier system, when compared to the prior art systems.
It is thus an object of the present invention to provide a low cost, high quality BPSK modulator compatible for use in spread spectrum-type communications systems.
It is another object of the present invention to provide a BPSK modulation system which is compatible with low power logic input, such as that driven by CMOS circuitry.
It is still another object of the present invention to provide a BPSK modulator which utilizes a single transformer and two transistors, adjusts for carrier suppression, and provides eight db-t- of gain.
-4 - BRIEF DESCRIPTION of the DRAWINGS
For a further understanding of the nature and objects of the present invention, reference should be had to the following detailed description, taken in conjunction with the accompanying drawings, in which like parts are given like reference numerals, and wherein:
Figure 1 is a Schematic Illustration of the preferred embodiment of the BPSK Modulator of the present invention.
Figure 2 is Schematic Illustration of an alternative, less costly embodiment of the BPSK Modulator of Figure l.
-5 - DETAILED DESCRIPTION of the PREFERRED. EXEMPLARY EMBODIMEN (S.
The described modulator uses only one transformer which also adjusts for carrier suppression and two transistors, and as such can be driven from low power CMOS logic levels producing a full eight dB of gain.
BPSK modulation seeks to alternate a carrier between a 0 degree phase shift and a 180 degree phase shift, the phase shift of the carrier providing the modulation. As illustrat¬ ed in Figure l of the present invention, the outputs of the transformer "A", when the center tap "B" is grounded, are inherently at opposite phases, 0 degrees and 180 de¬ grees.
Transistor C and D can then be alternately selected by biasing the MOD + or MOD - inputs to on. Thus, either the 0 degree phase shift or 180 degree phase shift can be selected, which provides BPSK modulation with 8 dB of gain.
An alternative embodiment to the present invention obviates with the need for the costly center tap in the transformer, further simplifying the present design. This circuit is based upon the premise that an inductor at resonance has outputs 180 degrees out of phase, producing 0 and 180 degrees outputs. The 0 degree and 180 degree outputs are selected using the same MOD -, MOD + biasing as de¬ scribed above.
-6 - Through extensive experimentation, the present inventor has determined that either tight (>.6 coupling coefficient) or loose (<.3 coupling coefficient) coupling of the trans¬ former windings can be used to produce suitable 0 degree and 180 degree phase shifts for BPSK modulation.
As illustrated in Figure 2, in the embodiment implement¬ ing the loosely coupled transformer, both capacitors G and F must be configured to resonate in conjunction with the carrier frequency to be modulated. The resonate point in this circuit may be fine adjusted by varying the transforme¬ r's inductance, by turning the tunable core or slug of transformer E.
In a tightly coupled transformer, capacitor G can be eliminated and transformer E must be only resonate with capacitor F. Fine tuning is again achieved by adjusting the slug or core of transformer E. The value of capacitor F must be such that it resonates with transformer E at the frequency to be modulated.
Both embodiments of the invention perform identically when properly configured and can produce excellent BPSK spread spectrum modulation with adjustable carrier suppres¬ sion.
As discussed above, the value of the resonate capacitors to be used is dependent upon the transformer inductance and carrier frequency. In the present invention, if a 1 1/2 primary turn to 21/2 secondary turn transformer is used with a carrier frequency of 300 MHz, then practical resonate
"7 - capacitor values are 2.2 to 6.8 pf for G & E. The series coupling capacitors must be relatively small to minimize coupling of transistor base to collector capacitance. Practical values are from 2.2 to 8.2 pf.
The transformer turns ratio is selected to match the impedance of the driving carrier CKT to the input impedance of the gain/phase selection transistors.
Since Figure 2 must be in resonance to function, the overall Q of the CKT and transformer coupling can be chosen to optimize performance as a tuned filter. Q is primarily effected by the transformer slug loss. Further loosely coupled transformers provide optimum filtering characteris¬ tics. This function can filter out undesirable harmonics from previous RF stages, eliminating otherwise required additional filter components.
The overall 8 dB of gain realized is a product of sums of both gain and losses of the entire circuit. The trans¬ former produces 2 to 4 dB of loss, the coupling capacitors produce 1 dB of loss, the transistors provide 12 to 13 dB of gain. The average circuit gain is determined as the minimum overall gain (12-4-1) = 7 dB to a maximum overall gain of (13-2-1) = 10 dB of gain.
As discussed infra, the present invention's design is not limited to use in BPSK modulation. The present inven¬ tion, in an alternative use, may be utilized as a frequency multiplier.
-8 - For example, if the transistor(s) , or their equivalents, as utilized in the present invention, is adequately fast, for example, Ft>lGHZ, the system may be utilized to create at its output a higher frequency harmonic. The circuit layout, and implementation of this alternative embodiment would remain substantively the same as set forth in the figures shown.
As is known in the art, it is a common radio design practice to utilize a non-linear device such as a diode, transistor, or the like to perform frequency multiplication. This is desirable because only lower frequency crystals are readily available, and as such, the lower frequency must then be translated into the higher, desired frequency.
When the modulation transistor arrangement is addition¬ ally utilized in the present invention in the frequency modulation capacity, less subsequent stages are required. This serves to lower both the cost and complexity of a frequency multiplier system, when compared to the prior art systems.
The embodiment(s) described herein in detail for exemplary purposes are of course subject to many different variations in structure, design, application and methodology. Because many varying and different embodiments may be made within the scope of the inventive concept(s) herein taught, and because many modifications may be made in the embodi¬ ment(s) herein detailed in accordance with the descriptive requirements of the law, it is to be understood that the
-9 - details herein are to be interpreted as illustrative and not in a limiting sense.
As a further example, other acceptable, equivalent devices may be utilized in place of the two transistors in the present invention. These may include high frequency field effect transistors (FET's) , or digital logic gates, which are biased into a linear region utilizing common techniques. These devices may be incorporated into the system of the present invention, replacing in effect the transistors, utilizing common engineering techniques.
-10 -

Claims

CLAIMS What is CLAIMED is:
1. A BPSK Modulator circuit, comprising: a transformer, said transformer further comprising first induction means having a carrier input leg and an output leg, second induction means having first and second leg outputs, said transformer configured such that said first and second leg outpjts of said second induction means modulates at opposite phases of 180 and 0 degrees, forming "MOD +" and "MOD -", respectively, relative a carrier signal supplied to said carrier input of said first induction means; first and second phase selection means configured to modulate via input of said of said first and second outputs of said second induction means, said first and second phase selection means further comprising first and second load transistors or their equivalent, respectively, each having an emitter, and a base or the equivalent, said base of said first transistor in circuit with said first output of said second inductor, receiving said "MOD +", said base of said second transistor in circuit with said second output of said second inductor, receiving said "MOD -".
2. A BPSK Modulator circuit having a tunable slug or core to adjust carrier suppression in a spread spectrum system, comprising: a transformer, said transformer further comprising first induction means having a carrier input leg and an output leg,
-11 - second induction means having first and second leg outputs, and. a tunable slug or core in communication with said first and second induction means, said transformer configured such that said first and second leg outputs of said second induction means modulates at opposite phases of 180 and 0 degrees, forming "MOD +" and "MOD -", respectively, relative a carrier signal supplied to said carrier input of said first induction means; first and second phase selection means configured to modulate via input of said first and second leg outputs of said second induction means, said first and second phase selection means further comprising first and second load transistors, respectively, each having an emitter, a collec¬ tor, and a base, said base of said first transistor in circuit with said first output leg of said second inductor, receiving said "MOD +", said base of said second transistor in circuit with said second output leg of said second inductor, receiving said "MOD -".
3. A BPSK Modulator circuit utilizing a loosely coupled transformer to adjust carrier suppression in a spread spectrum system, comprising: a transformer, said transformer further comprising first induction means having a carrier input leg and an output leg, second induction means loosely coupled with said first induction means, said second induction means having first and second leg output, said transformer configured such that said
-12 - first and second leg outputs of said second induction means modulates at opposite phases of 180 and 0 degrees, forming "MOD +" and "MOD -", respectively, relative a carrier signal supplied to said carrier input of said first induction means; first and second capacitors, said first capacitor in parallel circuit with said carrier input leg and grounded output leg of said first induction means, said second capacitor in parallel circuit with said first and second leg outputs of said second induction means, first and second phase selection means configured to modulate via input of said first and second outputs of said second induction means, said first and second phase selection means further comprising first and second load transistors, respectively, each having an emitter, a collector, and a base, said base of said first transistor in serial circuit with said first leg output of said second inductor, receiving said "MOD +", said base of said second transistor in serial circuit with said second leg output of said second inductor, receiving said "MOD -".
4. The BPSK Modulation System of Claim 3, wherein there is further included a tunable slug or core in communication with said first and second inductors.
5. The BPSK Modulation System of Claim 4, wherein there is further included resonator capacitor means in parallel circuit with said first and said second leg outputs of said
-13 - second induction means, said resonator capacitor transformer coupling means configured to provide band pass filtering for previous stage harmonic suppression.
6. A BPSK Modulator circuit having a tightly coupled transformer having no center tap and a single parallel resonate capacitor on the secondary to provide BPSK modula¬ tion, comprising: a transformer, said transformer further comprising first induction means having a carrier input leg and an output leg, second induction means tightly coupled to said first induc¬ tion means, said second induction means having first and second leg outputs, said transformer configured such that said first and second leg outputs of said second induction means modulates at opposite phases of 180 and 0 degrees, forming "MOD +" and "MOD -", respectively, relative a carrier signal supplied to said carrier input of said first induction means; band pass filter means for filtering harmonic suppres¬ sion from said transformer, said band pass filter means further comprising a resonate capacitor in parallel circuit with said first and second leg outputs of said second induction means; first and second phase selection means configured to modulate via input of said of said first and second outputs of said second induction means, said first and second phase selection means further comprising first and second load
-14 - transistors, respectively, each having an emitter, a collec¬ tor, and a base, said base of said first transistor in circuit with said first leg output of said second inductor, receiving said "MOD +", said base of said second transistor in circuit with said second output of said second inductor, receiving said "MOD -".
7. The BPSK Modulation System of Claim 6, wherein said system further comprises adjustment means for adjusting carrier suppression, said adjustment means further comprising a tunable slug or core in communication with said first and second induction means.
8. The BPSK Modulation System of Claim 6, wherein there is further included resonator capacitor means in parallel circuit with said first and said second leg outputs of said second induction means, said resonator capacitor means configured to provide band pass filtering for previous stage harmonic suppression.
-15 -
9. A frequency multiplier circuit, comprising: a transformer, said transformer further comprising first induction means having a carrier input leg and an output leg, second induction means having first and second leg outputs, said transformer configured such that said first and second leg outputs of said second induction means modulates at opposite phases of 180 and 0 degrees, forming "MOD +" and "MOD -", respectively, relative a carrier signal supplied to said carrier input of said first induction means; phase selection means configured to modulate via input of said of said first and second outputs of said second induction means, said phase selection means having a Ft>lGHZ, and further comprising an emitter, and first and second bases or the equivalent, said first base in circuit with said first output of said second inductor, receiving said "MOD +", said second base in circuit with said second output of said second inductor, receiving said "MOD -".
10. A frequency multiplier circuit, comprising: a transformer, said transformer further comprising first induction means having a carrier input leg and an output leg, second induction means having first and second leg outputs, said transformer configured such that said first and second leg outputs of said second induction means modulates at opposite phases of 180 and 0 degrees, forming "MOD +" and "MOD -", respectively, relative a carrier signal supplied to said carrier input of said first induction means;
-16 - phase selection means.configured to modulate via input of said of said first and second outputs of said second induction means, said phase selection means having a Ft>lGHZ, and further comprising an emitter, and first and second bases or the equivalent, said first base in circuit with said first output of said second inductor, receiving said "MOD +", said second base in circuit with said second output of said second inductor, receiving said "MOD -".
11. A frequency multiplier circuit utilizing a loosely coupled transformer to adjust carrier suppression, compris¬ ing: a transformer, said transformer further comprising first induction means having a carrier input leg and an output leg, second induction means loosely coupled with said first induction means, said second induction means having first and second leg output, said transformer configured such that said first and second leg outputs of said second induction means modulates at opposite phases of 180 and 0 degrees, forming "MOD +" and "MOD -", respectively, relative a carrier signal supplied to said carrier input of said first induction means; first and second capacitors, said first capacitor in parallel circuit with said carrier input leg and grounded output leg of said first induction means, said second capacitor in parallel circuit with said first and second leg outputs of said second induction means,
-17 - phase selection means configured to modulate via input of said of said first and second outputs of said second induction means, said phase selection means having a Ft>lGHZ, and further comprising an emitter, and first and second bases or the equivalent, said first base in circuit with said first output of said second inductor, receiving said "MOD +", said second base in circuit with said second output of said second inductor, receiving said "MOD -".
-18 -
12. The method of modulating a carrier between a 0 degree phase shift and a 180 degree phase shift, comprising the following steps: a. providing a transformer, said transformer further comprising first induction means having a carrier input leg and an output leg, and second induction means having first and second leg outputs, and a tunable slug or core in communication with said first and second induction means; b. tuning said slug or core such that said first and second leg outputs of said second induction means modulates at opposite phases of 180 and 0 degrees, forming "MOD +" and "MOD -", respectively, relative a carrier signal supplied to said carrier input of said first induction means; c. providing first and second phase selection means configured to modulate via input of said first and second leg outputs of said second induction means, said first and second phase selection means further comprising first and second load transistors, respectively, each having an emitter, a collector, and a base; d. configuring said base of said first transistor in circuit with said first output leg of said second inductor, receiving said "MOD +", said base of said second transistor in circuit with said second output leg of said second inductor, receiving said "MOD -".
-19 -
13. The method of utilizing a loosely coupled trans¬ former to adjust carrier suppression, modulating a carrier signal between a 0 degree phase shift and a 180 degree phase shift, comprising the following steps: a. providing a transformer, said transformer further comprising an inductor having first induction means having a carrier input leg, an output leg, and windings, and second induction means having first and second leg outputs and windings; b. coupling said windings of said first and second induction means to a >.6 and <.3 coupling coefficient; c. modulating said inductor at opposite phases of 180 and 0 degrees, forming "MOD +" and "MOD -", respectively, relative a carrier signal supplied to said carrier input of said first induction means; d. providing first and second phase selection means configured to modulate via input of said first and second leg outputs of said second induction means, said first and second phase selection means further comprising first and second load transistors, respectively, each having an emitter, a collector, and a base; e. configuring said base of said first transistor in circuit with said first output leg of said second inductor, receiving said "MOD +", said base of said second transistor in circuit with said second output leg of said second inductor, receiving said "MOD -".
-20 -
14. The method of Claim 13, wherein there is included the further step of providing first and second capacitors, said first capacitor in parallel circuit with said carrier input leg and grounded output leg of said first induction means, said second capacitor in parallel circuit with said first and second leg outputs of said second induction means.
-21 -
15. The method of multiplying a carrier to provide a higher frequency harmonic, comprising the following steps: a. providing a transformer, said transformer further comprising first induction means having a carrier input leg and an output leg, and second induction means having first and second leg outputs, and a tunable slug or core in communication with said first and second induction means; b. tuning said slug or core such that said first and second leg outputs of said second induction means modulates at opposite phases of 180 and 0 degrees, forming "MOD +" and "MOD -", respectively, relative a carrier signal supplied to said carrier input of said first induction means; c. providing phase selection means configured to modulate via input of said of said first and second outputs of said second induction means, said phase selection means having a Ft>lGHZ, and further comprising an emitter, and first and second bases or the equivalent, said first base in circuit with said first output of said second inductor, receiving said "MOD +", said second base in circuit with said second output of said second inductor, receiving said "MOD -
II d. configuring said first base in circuit with said first output leg of said second inductor, receiving said "MOD +", and said second base in circuit with said second output leg of said second inductor, receiving said "MOD -", multi¬ plying the carrier to provide a higher frequency harmonic.
-22 -
16. The method of utilizing a loosely coupled trans¬ former to adjust carrier suppression, modulating a carrier signal between a 0 degree phase shift and a 180 degree phase shift, and multiplying a carrier to provide a higher frequen¬ cy harmonic,comprising the following steps: a. providing a transformer, said transformer further comprising an inductor having first induction means having a carrier input leg, an output leg, and windings, and second induction means having first and second leg outputs and windings; b. coupling said windings of said first and second induction means to a >.6 and <.3 coupling coefficient; c. modulating said inductor at opposite phases of 180 and 0 degrees, forming "MOD +" and "MOD -", respectively, relative a carrier signal supplied to said carrier input of said first induction means; d. providing phase selection means configured to modulate via input of said of said first and second outputs of said second induction means, said phase selection means having a Ft>lGHZ, and further comprising an emitter, and first and second bases or the equivalent, said first base in circuit with said first output of said second inductor, receiving said "MOD +", said second base in circuit with said second output of said second inductor, receiving said "MOD -
•I e. configuring said first base in circuit with said first output leg of said second inductor, receiving said "MOD
-23 - +", and said second base in circuit with said second output leg of said second inductor, receiving said "MOD -", multi¬ plying the carrier to provide a higher frequency harmonic.
17. The method of Claim 16, wherein there is included the further step of providing first and second capacitors, said first capacitor in parallel circuit with said carrier input leg and grounded output leg of said first induction means, said second capacitor in parallel circuit with said first and second leg outputs of said second induction means.
-24 -
PCT/US1992/001988 1990-08-27 1992-03-12 Binary phase shift keying modulation system or frequency multiplier WO1993018597A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP92915383A EP0630538A4 (en) 1990-08-27 1992-03-12 Binary phase shift keying modulation system or frequency multiplier.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/572,468 US5119396A (en) 1990-08-27 1990-08-27 Binary phase shift keying modulation system

Publications (1)

Publication Number Publication Date
WO1993018597A1 true WO1993018597A1 (en) 1993-09-16

Family

ID=24287935

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1992/001988 WO1993018597A1 (en) 1990-08-27 1992-03-12 Binary phase shift keying modulation system or frequency multiplier

Country Status (3)

Country Link
US (2) US5119396A (en)
EP (1) EP0630538A4 (en)
WO (1) WO1993018597A1 (en)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5119396A (en) * 1990-08-27 1992-06-02 Axonn Corporation Binary phase shift keying modulation system
USRE35829E (en) * 1990-08-27 1998-06-23 Axonn Corporation Binary phase shift keying modulation system and/or frequency multiplier
US5345471A (en) * 1993-04-12 1994-09-06 The Regents Of The University Of California Ultra-wideband receiver
US5455543A (en) * 1994-01-28 1995-10-03 Thomson Consumer Electronics, Inc. Low power consumption binary phase shift keyed (BPSK) modulator using absorptive electronic switching techniques
US5455544A (en) * 1994-01-28 1995-10-03 Thomson Consumer Electronics, Inc. Low power consumption binary phase-shift-keyed (BPSK) modulator using reflective electronic switching techniques
US5859869A (en) * 1995-11-17 1999-01-12 Sanconix, Inc. Low cost binary phase shift keying modulation transmitter system
US5999561A (en) * 1997-05-20 1999-12-07 Sanconix, Inc. Direct sequence spread spectrum method, computer-based product, apparatus and system tolerant to frequency reference offset
KR100234947B1 (en) * 1997-06-05 1999-12-15 이형도 Multi-tap high frequency modulator
CA2704041C (en) * 2001-03-30 2013-09-03 M&Fc Holding, Llc Enhanced wireless packet data communication system, method, and apparatus applicable to both wide area networks and local area networks
US7397389B2 (en) * 2002-02-12 2008-07-08 Kim Buhl System and method for retrofitting utility meter reading modules
US7353034B2 (en) 2005-04-04 2008-04-01 X One, Inc. Location sharing and tracking using mobile phones or other wireless devices
US8024724B2 (en) * 2006-08-31 2011-09-20 Itron, Inc. Firmware download
US8312103B2 (en) 2006-08-31 2012-11-13 Itron, Inc. Periodic balanced communication node and server assignment
US7847536B2 (en) 2006-08-31 2010-12-07 Itron, Inc. Hall sensor with temperature drift control
US8049642B2 (en) 2006-09-05 2011-11-01 Itron, Inc. Load side voltage sensing for AMI metrology
US9354083B2 (en) * 2006-09-15 2016-05-31 Itron, Inc. Home area networking (HAN) with low power considerations for battery devices
US8787210B2 (en) 2006-09-15 2014-07-22 Itron, Inc. Firmware download with adaptive lost packet recovery
US8138944B2 (en) 2006-09-15 2012-03-20 Itron, Inc. Home area networking (HAN) with handheld for diagnostics
US8212687B2 (en) 2006-09-15 2012-07-03 Itron, Inc. Load side voltage sensing for AMI metrology
US8055461B2 (en) 2006-09-15 2011-11-08 Itron, Inc. Distributing metering responses for load balancing an AMR network
US7843391B2 (en) 2006-09-15 2010-11-30 Itron, Inc. RF local area network antenna design
US7965758B2 (en) * 2006-09-15 2011-06-21 Itron, Inc. Cell isolation through quasi-orthogonal sequences in a frequency hopping network
US8384558B2 (en) * 2006-10-19 2013-02-26 Itron, Inc. Extending contact life in remote disconnect applications
US7822137B2 (en) * 2006-10-25 2010-10-26 L3 Communications Integrated Systems, L.P. System and method for symbol rate estimation using vector velocity
US10200476B2 (en) 2011-10-18 2019-02-05 Itron, Inc. Traffic management and remote configuration in a gateway-based network
RU2500065C2 (en) * 2011-12-06 2013-11-27 Афанасьева Галина Николаевна Modulator on mos-transistors
US9419888B2 (en) 2011-12-22 2016-08-16 Itron, Inc. Cell router failure detection in a mesh network
JP6303348B2 (en) 2013-09-11 2018-04-04 株式会社ソシオネクスト Phase shifter, predistorter, and phased array antenna
EP3452880A1 (en) * 2016-05-06 2019-03-13 MTD Products Inc. Autonomous mower navigation system and method
CN108551331A (en) * 2018-03-23 2018-09-18 杭州电子科技大学 One kind being based on transformer coupled matched millimeter wave low-loss frequency multiplier
US10833799B2 (en) 2018-05-31 2020-11-10 Itron Global Sarl Message correction and dynamic correction adjustment for communication systems

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4979183A (en) * 1989-03-23 1990-12-18 Echelon Systems Corporation Transceiver employing direct sequence spread spectrum techniques
US5029180A (en) * 1989-03-23 1991-07-02 Echelon Systems Corporation Transceiver providing selectable frequencies and spreading sequences

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB965016A (en) * 1962-03-26 1964-07-29 Gen Electric Co Ltd Improvements in or relating to electric modulator circuits employing transistors
DE1935611B1 (en) * 1969-07-14 1971-02-04 Licentia Gmbh Active push-pull modulator
US5119396A (en) * 1990-08-27 1992-06-02 Axonn Corporation Binary phase shift keying modulation system
US5039959A (en) * 1990-09-20 1991-08-13 Rockwell International Corporation Phase switching circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4979183A (en) * 1989-03-23 1990-12-18 Echelon Systems Corporation Transceiver employing direct sequence spread spectrum techniques
US5029180A (en) * 1989-03-23 1991-07-02 Echelon Systems Corporation Transceiver providing selectable frequencies and spreading sequences

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP0630538A4 *

Also Published As

Publication number Publication date
US5265120A (en) 1993-11-23
US5119396A (en) 1992-06-02
EP0630538A1 (en) 1994-12-28
EP0630538A4 (en) 1997-02-05

Similar Documents

Publication Publication Date Title
WO1993018597A1 (en) Binary phase shift keying modulation system or frequency multiplier
USRE35829E (en) Binary phase shift keying modulation system and/or frequency multiplier
CN102237853B (en) Power control of reconfigurable outphasing chireix amplifiers and methods
KR100433073B1 (en) Rf filter arrangement with image trap
US7400865B2 (en) Variable bandwidth envelope modulator for use with envelope elimination and restoration transmitter architecture and method
GB2249679A (en) Mixer for direct conversion receiver
US6111477A (en) Microwave phase shifter including a reflective phase shift stage and a frequency multiplication stage
US4216542A (en) Method and apparatus for quadriphase-shift-key and linear phase modulation
GB2282287A (en) Mixers
CN202679353U (en) A mobile terminal radio frequency front-end transceiver equipped with a self-adaptive broadband oscillator
EP0570256A1 (en) Switchable high current induction and antenna tuning circuit using the same
MXPA04000274A (en) Switchable tuneable bandpass filter with optimized frequency response.
US11626893B2 (en) Agile harmonic filtering
CA2063229C (en) Binary phase shift keying modulation system and/or frequency multiplier
US5859869A (en) Low cost binary phase shift keying modulation transmitter system
US6647245B1 (en) Subsidiary communication authorization (SCA) radio turner
EP0471440A2 (en) Circuit for adding R.F. signals
WO2009089478A1 (en) Commutating amplifier with wide dynamic range
CN1069007C (en) Broadboard low-noise low intermodulation distortion receiver
EP0821470B1 (en) Voltage-controlled oscillator circuit
CN100438596C (en) Tuner
KR0168957B1 (en) Transceiver having a voltage controlled oscillator commonly used for both transmitting part and receiving part
CN102664654B (en) Radio frequency front end transceiver of mobile terminal with self-adapting bandwidth oscillator
KR20020000895A (en) Communication system with frequency modulation and with a single local oscillator
JP3107512B2 (en) High frequency tuning circuit

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): JP

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH DE DK ES FR GB GR IT LU MC NL SE

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 1992915383

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1992915383

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 1992915383

Country of ref document: EP