WO1993021656A1 - Semiconductor wafer temperature determination by optical measurement of wafer expansion in processing apparatus chamber - Google Patents
Semiconductor wafer temperature determination by optical measurement of wafer expansion in processing apparatus chamber Download PDFInfo
- Publication number
- WO1993021656A1 WO1993021656A1 PCT/US1993/003254 US9303254W WO9321656A1 WO 1993021656 A1 WO1993021656 A1 WO 1993021656A1 US 9303254 W US9303254 W US 9303254W WO 9321656 A1 WO9321656 A1 WO 9321656A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- temperature
- wafer
- signal
- processing
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 68
- 238000005259 measurement Methods 0.000 title claims abstract description 22
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 230000003287 optical effect Effects 0.000 title description 7
- 235000012431 wafers Nutrition 0.000 claims abstract description 166
- 238000000034 method Methods 0.000 claims abstract description 40
- 230000008859 change Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 11
- 238000012544 monitoring process Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 238000007872 degassing Methods 0.000 description 7
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007572 expansion measurement Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/38—Radiation pyrometry, e.g. infrared or optical thermometry using extension or expansion of solids or fluids
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
- G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0275—Control or determination of height or distance or angle information for sensors or receivers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/07—Arrangements for adjusting the solid angle of collected radiation, e.g. adjusting or orienting field of view, tracking position or encoding angular position
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0846—Optical arrangements having multiple detectors for performing different types of detection, e.g. using radiometry and reflectometry channels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940703711A KR950701456A (en) | 1992-04-15 | 1993-04-05 | Semiconductor wafer temperature determination by optical measurement of wafer expansion in processing apparatus chamber |
EP93908751A EP0636276A1 (en) | 1992-04-15 | 1993-04-05 | Semiconductor wafer temperature determination by optical measurement of wafer expansion in processing apparatus chamber |
JP5518443A JP2848704B2 (en) | 1992-04-15 | 1993-04-05 | Semiconductor wafer temperature determination by optical measurement of wafer expansion in processing equipment chamber |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/869,241 US5350899A (en) | 1992-04-15 | 1992-04-15 | Semiconductor wafer temperature determination by optical measurement of wafer expansion in processing apparatus chamber |
US07/869,241 | 1992-04-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1993021656A1 true WO1993021656A1 (en) | 1993-10-28 |
Family
ID=25353178
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1993/003254 WO1993021656A1 (en) | 1992-04-15 | 1993-04-05 | Semiconductor wafer temperature determination by optical measurement of wafer expansion in processing apparatus chamber |
Country Status (8)
Country | Link |
---|---|
US (1) | US5350899A (en) |
EP (1) | EP0636276A1 (en) |
JP (1) | JP2848704B2 (en) |
KR (1) | KR950701456A (en) |
AU (1) | AU3945993A (en) |
CA (1) | CA2132851A1 (en) |
TW (1) | TW289136B (en) |
WO (1) | WO1993021656A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19519178C2 (en) * | 1994-05-25 | 2003-07-24 | Hyundai Electronics Ind | Device for manufacturing a semiconductor layer using rapid thermal processing |
WO2018004879A1 (en) * | 2016-06-30 | 2018-01-04 | Varian Semiconductor Equipment Associates, Inc. | Semiconductor workpiece temperature measurement system |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5645351A (en) * | 1992-05-20 | 1997-07-08 | Hitachi, Ltd. | Temperature measuring method using thermal expansion and an apparatus for carrying out the same |
US5474381A (en) * | 1993-11-30 | 1995-12-12 | Texas Instruments Incorporated | Method for real-time semiconductor wafer temperature measurement based on a surface roughness characteristic of the wafer |
JP3035690B2 (en) * | 1994-01-27 | 2000-04-24 | 株式会社東京精密 | Wafer diameter / cross-sectional shape measuring device and wafer chamfering machine incorporating the same |
US5830277A (en) * | 1995-05-26 | 1998-11-03 | Mattson Technology, Inc. | Thermal processing system with supplemental resistive heater and shielded optical pyrometry |
JPH10261678A (en) * | 1997-03-18 | 1998-09-29 | Fujitsu Ltd | Tester and method for testing heat resistance of product |
US5902504A (en) * | 1997-04-15 | 1999-05-11 | Lucent Technologies Inc. | Systems and methods for determining semiconductor wafer temperature and calibrating a vapor deposition device |
KR100252041B1 (en) * | 1997-10-30 | 2000-04-15 | 윤종용 | Apparatus for detecting loading status of wafer in carrier and method therefor |
JP2000011470A (en) * | 1998-06-23 | 2000-01-14 | Tdk Corp | Method for measuring mechanical characteristic of resin disk and method for measuring mechanical characteristic of optical disk |
US6188323B1 (en) * | 1998-10-15 | 2001-02-13 | Asyst Technologies, Inc. | Wafer mapping system |
US6303411B1 (en) | 1999-05-03 | 2001-10-16 | Vortek Industries Ltd. | Spatially resolved temperature measurement and irradiance control |
DE50013906D1 (en) * | 2000-06-09 | 2007-02-08 | Zumbach Electronic Ag | Measuring device for rebars |
JP2002083756A (en) * | 2000-09-06 | 2002-03-22 | Canon Inc | Apparatus for adjusting substrate temperature |
ITMO20010248A1 (en) * | 2001-12-12 | 2003-06-12 | Expert System Solutions Srl | PERFECTED OPTICAL DILATOMETER |
US7734439B2 (en) | 2002-06-24 | 2010-06-08 | Mattson Technology, Inc. | System and process for calibrating pyrometers in thermal processing chambers |
US9627244B2 (en) | 2002-12-20 | 2017-04-18 | Mattson Technology, Inc. | Methods and systems for supporting a workpiece and for heat-treating the workpiece |
DE10318976B3 (en) * | 2003-04-26 | 2005-01-13 | Airbus Deutschland Gmbh | Method for detecting a fire occurring in a preferably closed space of an aircraft |
US7025498B2 (en) * | 2003-05-30 | 2006-04-11 | Asml Holding N.V. | System and method of measuring thermal expansion |
US8104951B2 (en) * | 2006-07-31 | 2012-01-31 | Applied Materials, Inc. | Temperature uniformity measurements during rapid thermal processing |
US8474468B2 (en) * | 2006-09-30 | 2013-07-02 | Tokyo Electron Limited | Apparatus and method for thermally processing a substrate with a heated liquid |
US8454356B2 (en) | 2006-11-15 | 2013-06-04 | Mattson Technology, Inc. | Systems and methods for supporting a workpiece during heat-treating |
US9383138B2 (en) * | 2007-03-30 | 2016-07-05 | Tokyo Electron Limited | Methods and heat treatment apparatus for uniformly heating a substrate during a bake process |
US7665917B2 (en) * | 2007-03-30 | 2010-02-23 | Tokyo Electron Limited | Heat treatment apparatus and methods for thermally processing a substrate using a pressurized gaseous environment |
US20080241400A1 (en) * | 2007-03-31 | 2008-10-02 | Tokyo Electron Limited | Vacuum assist method and system for reducing intermixing of lithography layers |
US20090034582A1 (en) * | 2007-08-02 | 2009-02-05 | Tokyo Electron Limited Tbs Broadcast Center | Apparatus for hot plate substrate monitoring and control |
US7976216B2 (en) * | 2007-12-20 | 2011-07-12 | Mattson Technology, Inc. | Determining the temperature of silicon at high temperatures |
US7791720B2 (en) * | 2007-12-31 | 2010-09-07 | Texas Instruments Incorporated | Semiconductor manufacturing peripheral verification tool |
JP4515509B2 (en) * | 2008-03-03 | 2010-08-04 | キヤノンアネルバ株式会社 | Substrate surface temperature measuring method and substrate processing apparatus using the same |
US9070590B2 (en) | 2008-05-16 | 2015-06-30 | Mattson Technology, Inc. | Workpiece breakage prevention method and apparatus |
US8109669B2 (en) * | 2008-11-19 | 2012-02-07 | Applied Materials, Inc. | Temperature uniformity measurement during thermal processing |
US9255941B1 (en) * | 2010-05-28 | 2016-02-09 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | System and method for determining fluence of a substance |
JP6057812B2 (en) * | 2013-04-02 | 2017-01-11 | 株式会社神戸製鋼所 | Processing apparatus and workpiece temperature measurement method |
KR20170023347A (en) * | 2015-08-21 | 2017-03-03 | 삼성전자주식회사 | Apparatus for inspecting robot hands |
EP3236492A1 (en) * | 2016-04-18 | 2017-10-25 | Meyer Burger (Germany) AG | Method and system for controlling a device for grasping or positioning substrates arranged on a substrate carrier |
US11915953B2 (en) | 2020-04-17 | 2024-02-27 | Applied Materials, Inc. | Apparatus, systems, and methods of measuring edge ring distance for thermal processing chambers |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5102231A (en) * | 1991-01-29 | 1992-04-07 | Texas Instruments Incorporated | Semiconductor wafer temperature measurement system and method |
WO1992021011A1 (en) * | 1991-05-20 | 1992-11-26 | Peak Systems, Inc. | Method and apparatus for temperature measurements using thermal expansion |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2198636A5 (en) * | 1972-09-06 | 1974-03-29 | France Etat | |
US3788746A (en) * | 1972-10-02 | 1974-01-29 | Hewlett Packard Co | Optical dilatometer |
DE2919858A1 (en) * | 1978-05-17 | 1979-11-22 | British Steel Corp | METHOD AND DEVICE FOR DETERMINING THE DIMENSIONS OF WORK PIECES |
GB2052734B (en) * | 1979-05-21 | 1983-10-19 | Daystrom Ltd | Position and dimension measuring apparaus |
FR2497341A1 (en) * | 1980-12-30 | 1982-07-02 | Socles Goudrons Derives | DEVICE FOR MEASURING THE DEFORMATION OF A MATERIAL UNDER THE EFFECT OF HEAT AND ITS APPLICATION TO THE DETERMINATION OF THE WETTING POWER OF BRAIS |
KR910004158B1 (en) * | 1983-08-15 | 1991-06-22 | Sinagawa Sirotenga Co Ltd | Thermal deformation measuring system of ceranics and the like |
CH666547A5 (en) * | 1984-12-20 | 1988-07-29 | Fischer Ag Georg | OPTICAL-ELECTRONIC MEASURING METHOD, A DEVICE REQUIRED FOR THIS AND ITS USE. |
US4775236A (en) * | 1985-05-03 | 1988-10-04 | Laser Metric Systems, Inc. | Laser based roundness and diameter gaging system and method of using same |
JPS61270840A (en) * | 1985-05-25 | 1986-12-01 | Koichiro Takaoka | Temperature measurement of semiconductor wafer |
JPH0640078B2 (en) * | 1989-08-21 | 1994-05-25 | 品川白煉瓦株式会社 | Displacement measuring device for hot ceramics |
-
1992
- 1992-04-15 US US07/869,241 patent/US5350899A/en not_active Expired - Lifetime
-
1993
- 1993-03-22 TW TW082102117A patent/TW289136B/zh active
- 1993-04-05 JP JP5518443A patent/JP2848704B2/en not_active Expired - Lifetime
- 1993-04-05 KR KR1019940703711A patent/KR950701456A/en active IP Right Grant
- 1993-04-05 EP EP93908751A patent/EP0636276A1/en not_active Withdrawn
- 1993-04-05 CA CA002132851A patent/CA2132851A1/en not_active Abandoned
- 1993-04-05 WO PCT/US1993/003254 patent/WO1993021656A1/en not_active Application Discontinuation
- 1993-04-05 AU AU39459/93A patent/AU3945993A/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5102231A (en) * | 1991-01-29 | 1992-04-07 | Texas Instruments Incorporated | Semiconductor wafer temperature measurement system and method |
WO1992021011A1 (en) * | 1991-05-20 | 1992-11-26 | Peak Systems, Inc. | Method and apparatus for temperature measurements using thermal expansion |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19519178C2 (en) * | 1994-05-25 | 2003-07-24 | Hyundai Electronics Ind | Device for manufacturing a semiconductor layer using rapid thermal processing |
WO2018004879A1 (en) * | 2016-06-30 | 2018-01-04 | Varian Semiconductor Equipment Associates, Inc. | Semiconductor workpiece temperature measurement system |
US9933314B2 (en) | 2016-06-30 | 2018-04-03 | Varian Semiconductor Equipment Associates, Inc. | Semiconductor workpiece temperature measurement system |
US10739208B2 (en) | 2016-06-30 | 2020-08-11 | Varian Semiconductor Equipment Associates, Inc. | Semiconductor workpiece temperature measurement system |
Also Published As
Publication number | Publication date |
---|---|
AU3945993A (en) | 1993-11-18 |
CA2132851A1 (en) | 1993-10-28 |
US5350899A (en) | 1994-09-27 |
KR950701456A (en) | 1995-03-23 |
EP0636276A1 (en) | 1995-02-01 |
TW289136B (en) | 1996-10-21 |
JP2848704B2 (en) | 1999-01-20 |
JPH07505744A (en) | 1995-06-22 |
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