WO1994006153A1 - Ohmic contact structure between platinum and silicon carbide - Google Patents
Ohmic contact structure between platinum and silicon carbide Download PDFInfo
- Publication number
- WO1994006153A1 WO1994006153A1 PCT/US1993/008516 US9308516W WO9406153A1 WO 1994006153 A1 WO1994006153 A1 WO 1994006153A1 US 9308516 W US9308516 W US 9308516W WO 9406153 A1 WO9406153 A1 WO 9406153A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- platinum
- silicon carbide
- doped
- ohmic contact
- Prior art date
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims abstract description 108
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 66
- 229910052697 platinum Inorganic materials 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000000137 annealing Methods 0.000 claims abstract description 19
- 239000002019 doping agent Substances 0.000 claims abstract description 17
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims description 18
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910021339 platinum silicide Inorganic materials 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 6
- 230000005641 tunneling Effects 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 59
- 229910052751 metal Inorganic materials 0.000 abstract description 43
- 239000002184 metal Substances 0.000 abstract description 43
- 239000000463 material Substances 0.000 abstract description 42
- 239000000758 substrate Substances 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 7
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000000869 ion-assisted deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950700923A KR100244078B1 (en) | 1992-09-10 | 1993-09-10 | Ohm contact structure between platinum and silicon carbide |
EP93921460A EP0659298B1 (en) | 1992-09-10 | 1993-09-10 | Ohmic contact structure between platinum and silicon carbide |
DE69324024T DE69324024T2 (en) | 1992-09-10 | 1993-09-10 | OHMSCH CONTACT STRUCTURE BETWEEN PLATINUM AND SILICON CARBIDE |
AU48546/93A AU4854693A (en) | 1992-09-10 | 1993-09-10 | Ohmic contact structure between platinum and silicon carbide |
JP6507541A JP3012331B2 (en) | 1992-09-10 | 1993-09-10 | Ohmic contact structure between platinum and silicon carbide |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/943,043 US5323022A (en) | 1992-09-10 | 1992-09-10 | Platinum ohmic contact to p-type silicon carbide |
US943,043 | 1992-09-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1994006153A1 true WO1994006153A1 (en) | 1994-03-17 |
Family
ID=25479011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1993/008516 WO1994006153A1 (en) | 1992-09-10 | 1993-09-10 | Ohmic contact structure between platinum and silicon carbide |
Country Status (7)
Country | Link |
---|---|
US (2) | US5323022A (en) |
EP (1) | EP0659298B1 (en) |
JP (1) | JP3012331B2 (en) |
AT (1) | ATE177878T1 (en) |
AU (1) | AU4854693A (en) |
DE (1) | DE69324024T2 (en) |
WO (1) | WO1994006153A1 (en) |
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US5442200A (en) * | 1994-06-03 | 1995-08-15 | Advanced Technology Materials, Inc. | Low resistance, stable ohmic contacts to silcon carbide, and method of making the same |
DE4406769A1 (en) * | 1994-03-02 | 1995-09-14 | Daimler Benz Ag | Process for contacting silicon carbide |
WO1996022611A1 (en) * | 1995-01-18 | 1996-07-25 | Telefonaktiebolaget Lm Ericsson (Publ) | A method of producing an ohmic contact and a semiconductor device provided with such ohmic contact |
EP0931187B1 (en) * | 1996-10-03 | 2003-03-05 | Abb Research Ltd. | A METHOD FOR PRODUCING A REGION DOPED WITH BORON IN A SiC-LAYER |
WO2003023837A1 (en) * | 2001-09-06 | 2003-03-20 | Toyoda Gosei Co., Ltd. | ELECTRODE FOR p-TYPE SiC |
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DE4406769A1 (en) * | 1994-03-02 | 1995-09-14 | Daimler Benz Ag | Process for contacting silicon carbide |
US5442200A (en) * | 1994-06-03 | 1995-08-15 | Advanced Technology Materials, Inc. | Low resistance, stable ohmic contacts to silcon carbide, and method of making the same |
US5980265A (en) * | 1994-06-03 | 1999-11-09 | Advanced Technology Materials, Inc. | Low resistance, stable ohmic contacts to silicon carbide, and method of making the same |
WO1996022611A1 (en) * | 1995-01-18 | 1996-07-25 | Telefonaktiebolaget Lm Ericsson (Publ) | A method of producing an ohmic contact and a semiconductor device provided with such ohmic contact |
US5877077A (en) * | 1995-01-18 | 1999-03-02 | Telefoanktiebolaget Lm Ericsson | Method of producing an ohmic contact and a semiconductor device provided with such ohmic contact |
CN1088256C (en) * | 1995-01-18 | 2002-07-24 | 艾利森电话股份有限公司 | Method of producing ohmic contact and semiconductor device |
EP0931187B1 (en) * | 1996-10-03 | 2003-03-05 | Abb Research Ltd. | A METHOD FOR PRODUCING A REGION DOPED WITH BORON IN A SiC-LAYER |
WO2003023837A1 (en) * | 2001-09-06 | 2003-03-20 | Toyoda Gosei Co., Ltd. | ELECTRODE FOR p-TYPE SiC |
US6943376B2 (en) | 2001-09-06 | 2005-09-13 | Toyoda Gosei Co., Ltd. | Electrode for p-type SiC |
CN113284793A (en) * | 2020-02-03 | 2021-08-20 | Abb电网瑞士股份公司 | Method for forming ohmic contact with P-type silicon carbide |
CN113284793B (en) * | 2020-02-03 | 2024-03-26 | 日立能源有限公司 | Method for forming ohmic contact with P-type silicon carbide |
Also Published As
Publication number | Publication date |
---|---|
EP0659298A1 (en) | 1995-06-28 |
JP3012331B2 (en) | 2000-02-21 |
DE69324024D1 (en) | 1999-04-22 |
US5409859A (en) | 1995-04-25 |
JPH08504298A (en) | 1996-05-07 |
EP0659298B1 (en) | 1999-03-17 |
DE69324024T2 (en) | 1999-08-12 |
AU4854693A (en) | 1994-03-29 |
ATE177878T1 (en) | 1999-04-15 |
US5323022A (en) | 1994-06-21 |
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