WO1996007300A3 - Manufacture of electronic devices comprising thin-film circuitry - Google Patents
Manufacture of electronic devices comprising thin-film circuitry Download PDFInfo
- Publication number
- WO1996007300A3 WO1996007300A3 PCT/IB1995/000559 IB9500559W WO9607300A3 WO 1996007300 A3 WO1996007300 A3 WO 1996007300A3 IB 9500559 W IB9500559 W IB 9500559W WO 9607300 A3 WO9607300 A3 WO 9607300A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- links
- tfts
- thin
- gateable
- film
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000001704 evaporation Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 238000007664 blowing Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 239000004973 liquid crystal related substance Substances 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1237—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a different composition, shape, layout or thickness of the gate insulator in different devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50858196A JP4039639B2 (en) | 1994-08-20 | 1995-07-13 | Manufacture of electronic devices with thin film circuits |
EP95923522A EP0724777B1 (en) | 1994-08-20 | 1995-07-13 | Manufacture of electronic devices comprising thin-film circuitry |
DE69513628T DE69513628T2 (en) | 1994-08-20 | 1995-07-13 | MANUFACTURE OF ELECTRONIC ITEMS FROM THIN-LAYER CIRCUITS |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9416899.4 | 1994-08-20 | ||
GB9416899A GB9416899D0 (en) | 1994-08-20 | 1994-08-20 | Manufacture of electronic devices comprising thin-film circuitry |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1996007300A2 WO1996007300A2 (en) | 1996-03-07 |
WO1996007300A3 true WO1996007300A3 (en) | 1996-05-02 |
Family
ID=10760185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB1995/000559 WO1996007300A2 (en) | 1994-08-20 | 1995-07-13 | Manufacture of electronic devices comprising thin-film circuitry |
Country Status (7)
Country | Link |
---|---|
US (1) | US5798534A (en) |
EP (1) | EP0724777B1 (en) |
JP (1) | JP4039639B2 (en) |
KR (1) | KR100361395B1 (en) |
DE (1) | DE69513628T2 (en) |
GB (1) | GB9416899D0 (en) |
WO (1) | WO1996007300A2 (en) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5985690A (en) * | 1995-01-30 | 1999-11-16 | Nec Corporation | Method of manufacturing contact image sensor |
KR0166894B1 (en) * | 1995-02-20 | 1999-03-30 | 구자홍 | Liquid crystal display device |
KR100252308B1 (en) * | 1997-01-10 | 2000-04-15 | 구본준, 론 위라하디락사 | Thin film transistor array |
JP3379896B2 (en) * | 1997-11-14 | 2003-02-24 | シャープ株式会社 | Liquid crystal display device and inspection method thereof |
FR2778497B1 (en) * | 1998-05-07 | 2003-06-13 | Sgs Thomson Microelectronics | INTEGRATED CIRCUIT FUSE, CURRENT FOCUSING |
US6242302B1 (en) | 1998-09-03 | 2001-06-05 | Micron Technology, Inc. | Semiconductor processing methods of forming contact openings, methods of forming electrical connections and interconnections, and integrated circuitry |
GB9825314D0 (en) * | 1998-11-20 | 1999-01-13 | Koninkl Philips Electronics Nv | Active matrix liquid crystal display devices |
KR100660813B1 (en) * | 1999-12-31 | 2006-12-26 | 엘지.필립스 엘시디 주식회사 | method for fabricating array substrate for x-ray detector |
TWI236557B (en) * | 2000-09-29 | 2005-07-21 | Au Optronics Corp | TFT LCD and method of making the same |
GB0100733D0 (en) * | 2001-01-11 | 2001-02-21 | Koninkl Philips Electronics Nv | A method of manufacturing an active matrix substrate |
KR100466963B1 (en) * | 2001-12-27 | 2005-01-24 | 엘지.필립스 엘시디 주식회사 | Thin Film Transistor for Active Matrix type Organic Light Emitting Diode Device |
TW560042B (en) * | 2002-09-18 | 2003-11-01 | Vanguard Int Semiconduct Corp | ESD protection device |
WO2004063799A1 (en) * | 2002-12-03 | 2004-07-29 | Quanta Display Inc. | Method for manufacturing the thin film transistor array |
TWI220313B (en) * | 2003-07-30 | 2004-08-11 | Au Optronics Corp | Electrostatic discharge circuit |
CN1324703C (en) * | 2003-08-11 | 2007-07-04 | 友达光电股份有限公司 | Static discharge protective circuit structure |
US7119411B2 (en) * | 2004-02-17 | 2006-10-10 | Au Optronics Corp. | Interconnect structure for TFT-array substrate and method for fabricating the same |
TWI255959B (en) * | 2004-02-23 | 2006-06-01 | Toppoly Optoelectronics Corp | Method of manufacturing thin film transistor array |
WO2005119779A1 (en) * | 2004-06-03 | 2005-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and manufacturing method of the same |
JP4671765B2 (en) * | 2004-06-03 | 2011-04-20 | 株式会社半導体エネルギー研究所 | Memory device and manufacturing method thereof |
JP4884784B2 (en) | 2005-01-28 | 2012-02-29 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device and semiconductor device |
US7719872B2 (en) | 2005-12-28 | 2010-05-18 | Semiconductor Energy Laboratory Co., Ltd. | Write-once nonvolatile memory with redundancy capability |
US20080024427A1 (en) * | 2006-07-26 | 2008-01-31 | Prime View International Co., Ltd. | Electronic ink display panel |
KR20060093321A (en) * | 2006-08-05 | 2006-08-24 | 박장용 | Welding machine system that can set crater in wire feeder |
WO2008041716A1 (en) | 2006-10-04 | 2008-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101441348B1 (en) | 2006-10-24 | 2014-09-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device including storage device and method for driving the same |
KR101416876B1 (en) | 2006-11-17 | 2014-07-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and method for manufacturing the same |
US7994607B2 (en) | 2007-02-02 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP5525694B2 (en) | 2007-03-14 | 2014-06-18 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method of semiconductor device |
US8217455B2 (en) * | 2008-04-14 | 2012-07-10 | International Business Machines Corporation | Semiconductor-on-insulator device structures with a body-to-substrate connection for enhanced electrostatic discharge protection, and design structures for such semiconductor-on-insulator device structures |
JP2010066331A (en) * | 2008-09-09 | 2010-03-25 | Fujifilm Corp | Display apparatus |
KR101586522B1 (en) * | 2010-01-06 | 2016-01-18 | 가부시키가이샤 제이올레드 | Active matrix substrate, display panel and inspection method thereof |
CN102540524B (en) * | 2010-12-30 | 2015-10-07 | 北京京东方光电科技有限公司 | Prevent the method for electrostatic breakdown, the manufacture method of array base palte and display backboard |
CN103123428B (en) * | 2011-11-18 | 2017-05-17 | 上海中航光电子有限公司 | Thin film transistor (TFT)-liquid crystal display (LCD) array substrate and production method thereof |
CN102651547B (en) * | 2012-01-12 | 2013-06-05 | 京东方科技集团股份有限公司 | ESD (Electro-Static discharge) protection circuit and display device comprising same |
CN102983134B (en) * | 2012-12-13 | 2015-03-25 | 京东方科技集团股份有限公司 | Display device and array substrate and fabrication method of array substrate |
KR20180066937A (en) * | 2016-12-09 | 2018-06-20 | 삼성디스플레이 주식회사 | Display device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4875130A (en) * | 1988-07-06 | 1989-10-17 | National Semiconductor Corporation | ESD low resistance input structure |
US5068748A (en) * | 1989-10-20 | 1991-11-26 | Hosiden Corporation | Active matrix liquid crystal display device having improved electrostatic discharge protection |
US5195010A (en) * | 1990-01-23 | 1993-03-16 | Thomson, S.A. | Electrostatic discharge voltage protection circuit for a solid state instrument |
US5233448A (en) * | 1992-05-04 | 1993-08-03 | Industrial Technology Research Institute | Method of manufacturing a liquid crystal display panel including photoconductive electrostatic protection |
EP0589519A2 (en) * | 1992-09-24 | 1994-03-30 | Philips Electronics Uk Limited | Electronic device manufacture |
EP0601652A2 (en) * | 1992-12-11 | 1994-06-15 | Philips Electronics Uk Limited | Electronic device manufacture using ion implantation |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0814667B2 (en) * | 1984-05-28 | 1996-02-14 | セイコーエプソン株式会社 | Method for manufacturing semiconductor device |
JP2610328B2 (en) * | 1988-12-21 | 1997-05-14 | 株式会社東芝 | Manufacturing method of liquid crystal display element |
US5019002A (en) * | 1989-07-12 | 1991-05-28 | Honeywell, Inc. | Method of manufacturing flat panel backplanes including electrostatic discharge prevention and displays made thereby |
GB2245741A (en) * | 1990-06-27 | 1992-01-08 | Philips Electronic Associated | Active matrix liquid crystal devices |
JPH04130668A (en) * | 1990-09-20 | 1992-05-01 | Stanley Electric Co Ltd | Thin film transistor device |
US5220443A (en) * | 1991-04-29 | 1993-06-15 | Nec Corporation | Matrix wiring substrate and active matrix display having non-linear resistance elements for electrostatic discharge protection |
JP3199808B2 (en) * | 1991-05-14 | 2001-08-20 | セイコーインスツルメンツ株式会社 | Semiconductor integrated circuit device |
JP2779085B2 (en) * | 1991-12-27 | 1998-07-23 | シャープ株式会社 | Thin film transistor substrate |
DE69319760T2 (en) * | 1992-02-21 | 1999-02-11 | Toshiba Kawasaki Kk | Liquid crystal display device |
US5497146A (en) * | 1992-06-03 | 1996-03-05 | Frontec, Incorporated | Matrix wiring substrates |
CN1065051C (en) * | 1992-08-13 | 2001-04-25 | 卡西欧计算机公司 | Thin-film transistor array and liquid crystal display device using the thin-film transistor array |
US5448095A (en) * | 1993-12-20 | 1995-09-05 | Eastman Kodak Company | Semiconductors with protective layers |
-
1994
- 1994-08-20 GB GB9416899A patent/GB9416899D0/en active Pending
-
1995
- 1995-07-13 KR KR1019960701979A patent/KR100361395B1/en not_active IP Right Cessation
- 1995-07-13 WO PCT/IB1995/000559 patent/WO1996007300A2/en active IP Right Grant
- 1995-07-13 DE DE69513628T patent/DE69513628T2/en not_active Expired - Lifetime
- 1995-07-13 JP JP50858196A patent/JP4039639B2/en not_active Expired - Fee Related
- 1995-07-13 EP EP95923522A patent/EP0724777B1/en not_active Expired - Lifetime
- 1995-08-08 US US08/512,429 patent/US5798534A/en not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4875130A (en) * | 1988-07-06 | 1989-10-17 | National Semiconductor Corporation | ESD low resistance input structure |
US5068748A (en) * | 1989-10-20 | 1991-11-26 | Hosiden Corporation | Active matrix liquid crystal display device having improved electrostatic discharge protection |
US5195010A (en) * | 1990-01-23 | 1993-03-16 | Thomson, S.A. | Electrostatic discharge voltage protection circuit for a solid state instrument |
US5233448A (en) * | 1992-05-04 | 1993-08-03 | Industrial Technology Research Institute | Method of manufacturing a liquid crystal display panel including photoconductive electrostatic protection |
EP0589519A2 (en) * | 1992-09-24 | 1994-03-30 | Philips Electronics Uk Limited | Electronic device manufacture |
EP0601652A2 (en) * | 1992-12-11 | 1994-06-15 | Philips Electronics Uk Limited | Electronic device manufacture using ion implantation |
Also Published As
Publication number | Publication date |
---|---|
JPH09504657A (en) | 1997-05-06 |
DE69513628T2 (en) | 2000-12-07 |
DE69513628D1 (en) | 2000-01-05 |
US5798534A (en) | 1998-08-25 |
KR100361395B1 (en) | 2003-03-06 |
GB9416899D0 (en) | 1994-10-12 |
EP0724777B1 (en) | 1999-12-01 |
KR960705371A (en) | 1996-10-09 |
EP0724777A1 (en) | 1996-08-07 |
WO1996007300A2 (en) | 1996-03-07 |
JP4039639B2 (en) | 2008-01-30 |
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