WO1996037639A3 - Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities - Google Patents

Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities Download PDF

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Publication number
WO1996037639A3
WO1996037639A3 PCT/US1996/006768 US9606768W WO9637639A3 WO 1996037639 A3 WO1996037639 A3 WO 1996037639A3 US 9606768 W US9606768 W US 9606768W WO 9637639 A3 WO9637639 A3 WO 9637639A3
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WO
WIPO (PCT)
Prior art keywords
growth
thin films
organic
vapor phase
phase deposition
Prior art date
Application number
PCT/US1996/006768
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French (fr)
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WO1996037639A2 (en
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Univ Princeton
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Princeton filed Critical Univ Princeton
Priority to EP96916459A priority Critical patent/EP0828867B1/en
Priority to JP8535729A priority patent/JP2000504298A/en
Priority to CA002220354A priority patent/CA2220354C/en
Priority to DE69625684T priority patent/DE69625684T2/en
Publication of WO1996037639A2 publication Critical patent/WO1996037639A2/en
Publication of WO1996037639A3 publication Critical patent/WO1996037639A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54—Organic compounds

Abstract

In a method using organic vapor phase deposition (OCPD), for the growth of thin films of optically nonlinear organic salts, a volatile precursor of each component of the salt is carried as a vapor to a hot-wall reaction chamber by independently controlled streams of carrier gas. The components react to form a polycrystalline thin film on substrates of glass and gold. Excess reactants and reaction products are purged from the system by the carrier gas. For example, the method provides the growth of polycrystalline, optically nonlinear thin films of 4'-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST) with >95 % purity.
PCT/US1996/006768 1995-05-19 1996-05-13 Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities WO1996037639A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP96916459A EP0828867B1 (en) 1995-05-19 1996-05-13 Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities
JP8535729A JP2000504298A (en) 1995-05-19 1996-05-13 Organic vapor phase reaction method and apparatus for growing organic thin film having excellent nonlinear optical properties
CA002220354A CA2220354C (en) 1995-05-19 1996-05-13 Method and apparatus using organic vapor phase deposition for the growth of organic thin films
DE69625684T DE69625684T2 (en) 1995-05-19 1996-05-13 Method and device for an organic gas phase coating for producing organic films with high optical nonlinearity

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/444,252 1995-05-19
US08/444,252 US5554220A (en) 1995-05-19 1995-05-19 Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities

Publications (2)

Publication Number Publication Date
WO1996037639A2 WO1996037639A2 (en) 1996-11-28
WO1996037639A3 true WO1996037639A3 (en) 1997-01-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1996/006768 WO1996037639A2 (en) 1995-05-19 1996-05-13 Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities

Country Status (6)

Country Link
US (1) US5554220A (en)
EP (1) EP0828867B1 (en)
JP (1) JP2000504298A (en)
CA (1) CA2220354C (en)
DE (1) DE69625684T2 (en)
WO (1) WO1996037639A2 (en)

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Also Published As

Publication number Publication date
EP0828867A2 (en) 1998-03-18
JP2000504298A (en) 2000-04-11
WO1996037639A2 (en) 1996-11-28
EP0828867A4 (en) 1999-10-27
CA2220354C (en) 2002-12-10
DE69625684T2 (en) 2003-10-23
CA2220354A1 (en) 1996-11-28
US5554220A (en) 1996-09-10
DE69625684D1 (en) 2003-02-13
EP0828867B1 (en) 2003-01-08

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