WO1996038861A1 - Raised tungsten plug antifuse and fabrication process - Google Patents
Raised tungsten plug antifuse and fabrication process Download PDFInfo
- Publication number
- WO1996038861A1 WO1996038861A1 PCT/US1996/008263 US9608263W WO9638861A1 WO 1996038861 A1 WO1996038861 A1 WO 1996038861A1 US 9608263 W US9608263 W US 9608263W WO 9638861 A1 WO9638861 A1 WO 9638861A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- antifuse
- interlayer dielectric
- forming
- dielectric layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP96922380A EP0774164A1 (en) | 1995-06-02 | 1996-05-31 | Raised tungsten plug antifuse and fabrication process |
JP8536750A JP3027195B2 (en) | 1995-06-02 | 1996-05-31 | Raised tungsten plug antifuse and method of manufacturing the same |
KR1019970700695A KR100252447B1 (en) | 1995-06-02 | 1996-05-31 | Raised tungsten plug antifuse and fabrication process |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46041795A | 1995-06-02 | 1995-06-02 | |
US08/460,417 | 1995-06-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1996038861A1 true WO1996038861A1 (en) | 1996-12-05 |
Family
ID=23828620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1996/008263 WO1996038861A1 (en) | 1995-06-02 | 1996-05-31 | Raised tungsten plug antifuse and fabrication process |
Country Status (6)
Country | Link |
---|---|
US (4) | US5804500A (en) |
EP (1) | EP0774164A1 (en) |
JP (1) | JP3027195B2 (en) |
KR (1) | KR100252447B1 (en) |
CA (1) | CA2196557A1 (en) |
WO (1) | WO1996038861A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10030445A1 (en) * | 2000-06-22 | 2002-01-10 | Infineon Technologies Ag | connecting element |
US6358268B1 (en) | 2000-03-06 | 2002-03-19 | Robert B. Hunt | Surgical instrument |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5485031A (en) | 1993-11-22 | 1996-01-16 | Actel Corporation | Antifuse structure suitable for VLSI application |
EP0774164A1 (en) * | 1995-06-02 | 1997-05-21 | Actel Corporation | Raised tungsten plug antifuse and fabrication process |
US5986322A (en) * | 1995-06-06 | 1999-11-16 | Mccollum; John L. | Reduced leakage antifuse structure |
JPH1056066A (en) * | 1996-08-08 | 1998-02-24 | Matsushita Electron Corp | Anti-fuse device and manufacture thereof |
US6458645B2 (en) * | 1998-02-26 | 2002-10-01 | Micron Technology, Inc. | Capacitor having tantalum oxynitride film and method for making same |
US6107165A (en) * | 1998-08-13 | 2000-08-22 | Quicklogic Corporation | Metal-to-metal antifuse having improved barrier layer |
US6249010B1 (en) * | 1998-08-17 | 2001-06-19 | National Semiconductor Corporation | Dielectric-based anti-fuse cell with polysilicon contact plug and method for its manufacture |
US6515343B1 (en) | 1998-11-19 | 2003-02-04 | Quicklogic Corporation | Metal-to-metal antifuse with non-conductive diffusion barrier |
US6436839B1 (en) * | 1999-06-01 | 2002-08-20 | Taiwan Semiconductor Manufacturing Company | Increasing programming silicide process window by forming native oxide film on amourphous Si after metal etching |
US6362102B1 (en) | 1999-12-27 | 2002-03-26 | Chartered Semiconductor Manufacturing Ltd | Method of forming top metal contact to antifuse |
US6368900B1 (en) | 2000-02-11 | 2002-04-09 | Chartered Semiconductor Manufacturing Ltd. | Method of fabricating an antifuse element |
US6396120B1 (en) | 2000-03-17 | 2002-05-28 | International Business Machines Corporation | Silicon anti-fuse structures, bulk and silicon on insulator fabrication methods and application |
US6492206B2 (en) * | 2000-12-12 | 2002-12-10 | Actel Corporation | Antifuse with improved radiation SEDR |
US6809398B2 (en) * | 2000-12-14 | 2004-10-26 | Actel Corporation | Metal-to-metal antifuse structure and fabrication method |
US6603142B1 (en) | 2000-12-18 | 2003-08-05 | Actel Corporation | Antifuse incorporating tantalum nitride barrier layer |
US7390726B1 (en) | 2001-10-02 | 2008-06-24 | Actel Corporation | Switching ratio and on-state resistance of an antifuse programmed below 5 mA and having a Ta or TaN barrier metal layer |
US20030062596A1 (en) * | 2001-10-02 | 2003-04-03 | Actel Corporation | Metal-to-metal antifuse employing carbon-containing antifuse material |
US6728126B1 (en) | 2002-12-20 | 2004-04-27 | Actel Corporation | Programming methods for an amorphous carbon metal-to-metal antifuse |
US6965156B1 (en) * | 2002-12-27 | 2005-11-15 | Actel Corporation | Amorphous carbon metal-to-metal antifuse with adhesion promoting layers |
US7459763B1 (en) | 2001-10-02 | 2008-12-02 | Actel Corporation | Reprogrammable metal-to-metal antifuse employing carbon-containing antifuse material |
US6773967B1 (en) * | 2002-01-04 | 2004-08-10 | Taiwan Semiconductor Manufacturing Company | Method to prevent antifuse Si damage using sidewall spacers |
US6559516B1 (en) * | 2002-01-16 | 2003-05-06 | Hewlett-Packard Development Company | Antifuse structure and method of making |
DE10255425A1 (en) * | 2002-11-28 | 2004-06-17 | Infineon Technologies Ag | Production of an anti-fuse structure in a substrate used in integrated circuits comprises forming a conducting region and a non-conducting region in the substrate to form an edge of the conducting region, and depositing a dielectric layer |
US7323761B2 (en) * | 2004-11-12 | 2008-01-29 | International Business Machines Corporation | Antifuse structure having an integrated heating element |
KR100620705B1 (en) * | 2004-12-31 | 2006-09-13 | 동부일렉트로닉스 주식회사 | Antifuse Having Uniform Dielectric Thickness and Manufacturing Method Thereof |
JP5525694B2 (en) * | 2007-03-14 | 2014-06-18 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method of semiconductor device |
CN100461379C (en) * | 2007-03-29 | 2009-02-11 | 友达光电股份有限公司 | Picture element structure of liquid crystal display and producing method thereof |
US7713857B2 (en) * | 2008-03-20 | 2010-05-11 | Micron Technology, Inc. | Methods of forming an antifuse and a conductive interconnect, and methods of forming DRAM circuitry |
JP5454839B2 (en) * | 2008-04-30 | 2014-03-26 | 株式会社村田製作所 | Antifuse element |
US7929345B2 (en) * | 2008-12-23 | 2011-04-19 | Actel Corporation | Push-pull memory cell configured for simultaneous programming of n-channel and p-channel non-volatile transistors |
US8120955B2 (en) * | 2009-02-13 | 2012-02-21 | Actel Corporation | Array and control method for flash based FPGA cell |
US8049299B2 (en) | 2009-02-25 | 2011-11-01 | Freescale Semiconductor, Inc. | Antifuses with curved breakdown regions |
US8269203B2 (en) | 2009-07-02 | 2012-09-18 | Actel Corporation | Resistive RAM devices for programmable logic devices |
CN102019577B (en) * | 2009-09-17 | 2012-11-28 | 中芯国际集成电路制造(上海)有限公司 | Optimization method of chemical mechanical polishing process |
EP2608687B1 (en) | 2010-08-25 | 2018-05-30 | QP Holdings Limited | A bra |
US10270451B2 (en) | 2015-12-17 | 2019-04-23 | Microsemi SoC Corporation | Low leakage ReRAM FPGA configuration cell |
US10147485B2 (en) | 2016-09-29 | 2018-12-04 | Microsemi Soc Corp. | Circuits and methods for preventing over-programming of ReRAM-based memory cells |
DE112017006212T5 (en) | 2016-12-09 | 2019-08-29 | Microsemi Soc Corp. | Resistive memory cell with random access |
CN111033624B (en) | 2017-08-11 | 2023-10-03 | 美高森美SoC公司 | Circuit and method for programming a resistive random access memory device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0416903A2 (en) * | 1989-09-07 | 1991-03-13 | Quicklogic Corporation | Method of fabricating a programmable interconnect structure |
WO1992021154A1 (en) * | 1991-05-10 | 1992-11-26 | Quicklogic Corporation | Amorphous silicon antifuses and methods for fabrication thereof |
US5308795A (en) * | 1992-11-04 | 1994-05-03 | Actel Corporation | Above via metal-to-metal antifuse |
JPH06302701A (en) * | 1993-04-19 | 1994-10-28 | Kawasaki Steel Corp | Semiconductor device and fabrication thereof |
Family Cites Families (129)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3675090A (en) * | 1968-11-04 | 1972-07-04 | Energy Conversion Devices Inc | Film deposited semiconductor devices |
US3717852A (en) * | 1971-09-17 | 1973-02-20 | Ibm | Electronically rewritable read-only memory using via connections |
US4099069A (en) * | 1976-10-08 | 1978-07-04 | Westinghouse Electric Corp. | Circuit producing a common clear signal for erasing selected arrays in a mnos memory system |
US4177473A (en) * | 1977-05-18 | 1979-12-04 | Energy Conversion Devices, Inc. | Amorphous semiconductor member and method of making the same |
US4361599A (en) * | 1981-03-23 | 1982-11-30 | National Semiconductor Corporation | Method of forming plasma etched semiconductor contacts |
US4441247A (en) * | 1981-06-29 | 1984-04-10 | Intel Corporation | Method of making MOS device by forming self-aligned polysilicon and tungsten composite gate |
US4489481A (en) * | 1982-09-20 | 1984-12-25 | Texas Instruments Incorporated | Insulator and metallization method for VLSI devices with anisotropically-etched contact holes |
JPS5998971A (en) * | 1982-11-30 | 1984-06-07 | 株式会社ナカ技術研究所 | Bearing structure of ceiling inspection port |
US4847732A (en) * | 1983-09-15 | 1989-07-11 | Mosaic Systems, Inc. | Wafer and method of making same |
US4796075A (en) * | 1983-12-21 | 1989-01-03 | Advanced Micro Devices, Inc. | Fusible link structure for integrated circuits |
GB8400959D0 (en) * | 1984-01-13 | 1984-02-15 | British Petroleum Co Plc | Semiconductor device |
US4651409A (en) * | 1984-02-09 | 1987-03-24 | Ncr Corporation | Method of fabricating a high density, low power, merged vertical fuse/bipolar transistor |
US4870302A (en) * | 1984-03-12 | 1989-09-26 | Xilinx, Inc. | Configurable electrical circuit having configurable logic elements and configurable interconnects |
US4751197A (en) * | 1984-07-18 | 1988-06-14 | Texas Instruments Incorporated | Make-link programming of semiconductor devices using laser enhanced thermal breakdown of insulator |
US4912066A (en) * | 1984-07-18 | 1990-03-27 | Texas Instruments Incorporated | Make-link programming of semiconductor devices using laser-enhanced thermal breakdown of insulator |
JPS63500555A (en) * | 1985-07-29 | 1988-02-25 | アメリカン テレフオン アンド テレグラフ カムパニ− | Three-level interconnection method for integrated circuits |
US4748490A (en) * | 1985-08-01 | 1988-05-31 | Texas Instruments Incorporated | Deep polysilicon emitter antifuse memory cell |
EP0243486A1 (en) * | 1985-10-29 | 1987-11-04 | 4C Electronics, Inc. | Programmable integrated crosspoint switch |
US4647340A (en) * | 1986-03-31 | 1987-03-03 | Ncr Corporation | Programmable read only memory using a tungsten fuse |
US4943538A (en) * | 1986-05-09 | 1990-07-24 | Actel Corporation | Programmable low impedance anti-fuse element |
US4899205A (en) * | 1986-05-09 | 1990-02-06 | Actel Corporation | Electrically-programmable low-impedance anti-fuse element |
US5266829A (en) * | 1986-05-09 | 1993-11-30 | Actel Corporation | Electrically-programmable low-impedance anti-fuse element |
US5134457A (en) * | 1986-05-09 | 1992-07-28 | Actel Corporation | Programmable low-impedance anti-fuse element |
US4740485A (en) * | 1986-07-22 | 1988-04-26 | Monolithic Memories, Inc. | Method for forming a fuse |
US4732865A (en) * | 1986-10-03 | 1988-03-22 | Tektronix, Inc. | Self-aligned internal mobile ion getter for multi-layer metallization on integrated circuits |
US4981813A (en) * | 1987-02-24 | 1991-01-01 | Sgs-Thomson Microelectronics, Inc. | Pad oxide protect sealed interface isolation process |
JPS63299251A (en) * | 1987-05-29 | 1988-12-06 | Toshiba Corp | Manufacture of semiconductor device |
US4822753A (en) * | 1988-05-09 | 1989-04-18 | Motorola, Inc. | Method for making a w/tin contact |
US4933576A (en) * | 1988-05-13 | 1990-06-12 | Fujitsu Limited | Gate array device having macro cells for forming master and slave cells of master-slave flip-flop circuit |
GB2222024B (en) * | 1988-08-18 | 1992-02-19 | Stc Plc | Improvements in integrated circuits |
US5093711A (en) * | 1988-10-14 | 1992-03-03 | Seiko Epson Corporation | Semiconductor device |
US4920072A (en) * | 1988-10-31 | 1990-04-24 | Texas Instruments Incorporated | Method of forming metal interconnects |
US5010039A (en) * | 1989-05-15 | 1991-04-23 | Ku San Mei | Method of forming contacts to a semiconductor device |
US4914055A (en) * | 1989-08-24 | 1990-04-03 | Advanced Micro Devices, Inc. | Semiconductor antifuse structure and method |
US5468681A (en) * | 1989-08-28 | 1995-11-21 | Lsi Logic Corporation | Process for interconnecting conductive substrates using an interposer having conductive plastic filled vias |
US4978420A (en) | 1990-01-03 | 1990-12-18 | Hewlett-Packard Company | Single chamber via etch through a dual-layer dielectric |
US5866937A (en) | 1990-04-12 | 1999-02-02 | Actel Corporation | Double half via antifuse |
US5614756A (en) | 1990-04-12 | 1997-03-25 | Actel Corporation | Metal-to-metal antifuse with conductive |
US5070384A (en) * | 1990-04-12 | 1991-12-03 | Actel Corporation | Electrically programmable antifuse element incorporating a dielectric and amorphous silicon interlayer |
US5541441A (en) * | 1994-10-06 | 1996-07-30 | Actel Corporation | Metal to metal antifuse |
US5181096A (en) * | 1990-04-12 | 1993-01-19 | Actel Corporation | Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayer |
US5780323A (en) | 1990-04-12 | 1998-07-14 | Actel Corporation | Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug |
US5404029A (en) * | 1990-04-12 | 1995-04-04 | Actel Corporation | Electrically programmable antifuse element |
US5381035A (en) * | 1992-09-23 | 1995-01-10 | Chen; Wenn-Jei | Metal-to-metal antifuse including etch stop layer |
US5552627A (en) | 1990-04-12 | 1996-09-03 | Actel Corporation | Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayers |
US5272101A (en) * | 1990-04-12 | 1993-12-21 | Actel Corporation | Electrically programmable antifuse and fabrication processes |
KR910019241A (en) * | 1990-04-30 | 1991-11-30 | 리챠드 데이빗 라우만 | Integrated circuit with antifuse |
US5194759A (en) * | 1990-05-18 | 1993-03-16 | Actel Corporation | Methods for preventing disturbance of antifuses during programming |
US5095362A (en) * | 1990-10-23 | 1992-03-10 | Instant Circuit Corporation | Method for reducing resistance for programmed antifuse |
KR960007478B1 (en) * | 1990-12-27 | 1996-06-03 | 가부시키가이샤 도시바 | Method for testing semiconductor devices |
WO1992013359A1 (en) * | 1991-01-17 | 1992-08-06 | Crosspoint Solutions, Inc. | An improved antifuse circuit structure for use in a field programmable gate array and method of manufacture thereof |
US5163180A (en) * | 1991-01-18 | 1992-11-10 | Actel Corporation | Low voltage programming antifuse and transistor breakdown method for making same |
US5166556A (en) * | 1991-01-22 | 1992-11-24 | Myson Technology, Inc. | Programmable antifuse structure, process, logic cell and architecture for programmable integrated circuits |
DE69231858T2 (en) * | 1991-02-19 | 2002-03-28 | Texas Instruments Inc | Anti-fuse structure with sidewall and manufacturing process |
US5100827A (en) | 1991-02-27 | 1992-03-31 | At&T Bell Laboratories | Buried antifuse |
US5322812A (en) * | 1991-03-20 | 1994-06-21 | Crosspoint Solutions, Inc. | Improved method of fabricating antifuses in an integrated circuit device and resulting structure |
US5255593A (en) * | 1991-04-10 | 1993-10-26 | Bunn-O-Matic Corporation | Automatic brewer |
US5196724A (en) * | 1991-04-26 | 1993-03-23 | Quicklogic Corporation | Programmable interconnect structures and programmable integrated circuits |
US5557136A (en) * | 1991-04-26 | 1996-09-17 | Quicklogic Corporation | Programmable interconnect structures and programmable integrated circuits |
US5233217A (en) * | 1991-05-03 | 1993-08-03 | Crosspoint Solutions | Plug contact with antifuse |
US5290734A (en) * | 1991-06-04 | 1994-03-01 | Vlsi Technology, Inc. | Method for making anti-fuse structures |
US5120679A (en) * | 1991-06-04 | 1992-06-09 | Vlsi Technology, Inc. | Anti-fuse structures and methods for making same |
US5242851A (en) * | 1991-07-16 | 1993-09-07 | Samsung Semiconductor, Inc. | Programmable interconnect device and method of manufacturing same |
US5258643A (en) * | 1991-07-25 | 1993-11-02 | Massachusetts Institute Of Technology | Electrically programmable link structures and methods of making same |
US5327024A (en) * | 1992-07-02 | 1994-07-05 | Quicklogic Corporation | Field programmable antifuse device and programming method therefor |
US5302546A (en) * | 1991-07-31 | 1994-04-12 | Quicklogic Corporation | Programming of antifuses |
WO1993004499A1 (en) * | 1991-08-19 | 1993-03-04 | Crosspoint Solutions, Inc. | An improved antifuse and method of manufacture thereof |
US5241496A (en) * | 1991-08-19 | 1993-08-31 | Micron Technology, Inc. | Array of read-only memory cells, eacch of which has a one-time, voltage-programmable antifuse element constructed within a trench shared by a pair of cells |
EP0529820B1 (en) | 1991-08-26 | 1996-04-17 | Actel Corporation | Elevated metal-to-metal antifuse structures and fabrication processes |
WO1993005514A1 (en) * | 1991-09-04 | 1993-03-18 | Vlsi Technology, Inc. | Anti-fuse structures and methods for making same |
US5126290A (en) * | 1991-09-11 | 1992-06-30 | Micron Technology, Inc. | Method of making memory devices utilizing one-sided ozone teos spacers |
JPH05243178A (en) * | 1991-10-03 | 1993-09-21 | Hewlett Packard Co <Hp> | Method for forming connector for semiconductor integrated circuit |
US5451811A (en) * | 1991-10-08 | 1995-09-19 | Aptix Corporation | Electrically programmable interconnect element for integrated circuits |
US5272666A (en) * | 1991-10-18 | 1993-12-21 | Lattice Semiconductor Corporation | Programmable semiconductor antifuse structure and method of fabricating |
EP0539197A1 (en) * | 1991-10-23 | 1993-04-28 | Fujitsu Limited | Semiconductor device with anti-fuse and production method |
US5233206A (en) * | 1991-11-13 | 1993-08-03 | Micron Technology, Inc. | Double digitlines for multiple programming of prom applications and other anti-fuse circuit element applications |
EP0558176A1 (en) * | 1992-02-26 | 1993-09-01 | Actel Corporation | Metal-to-metal antifuse with improved diffusion barrier layer |
US5298784A (en) * | 1992-03-27 | 1994-03-29 | International Business Machines Corporation | Electrically programmable antifuse using metal penetration of a junction |
EP0564138A1 (en) * | 1992-03-31 | 1993-10-06 | STMicroelectronics, Inc. | Field programmable device |
US5329153A (en) * | 1992-04-10 | 1994-07-12 | Crosspoint Solutions, Inc. | Antifuse with nonstoichiometric tin layer and method of manufacture thereof |
DE69327824T2 (en) | 1992-07-31 | 2000-07-06 | St Microelectronics Inc | Programmable contact structure |
US5475253A (en) * | 1992-08-21 | 1995-12-12 | Xilinx, Inc. | Antifuse structure with increased breakdown at edges |
EP0592078A1 (en) * | 1992-09-23 | 1994-04-13 | Actel Corporation | Antifuse element and fabrication method |
US5284788A (en) * | 1992-09-25 | 1994-02-08 | Texas Instruments Incorporated | Method and device for controlling current in a circuit |
US5248632A (en) * | 1992-09-29 | 1993-09-28 | Texas Instruments Incorporated | Method of forming an antifuse |
US5395797A (en) * | 1992-12-01 | 1995-03-07 | Texas Instruments Incorporated | Antifuse structure and method of fabrication |
US5373169A (en) * | 1992-12-17 | 1994-12-13 | Actel Corporation | Low-temperature process metal-to-metal antifuse employing silicon link |
TW232091B (en) | 1992-12-17 | 1994-10-11 | American Telephone & Telegraph | |
US5447880A (en) * | 1992-12-22 | 1995-09-05 | At&T Global Information Solutions Company | Method for forming an amorphous silicon programmable element |
US5387311A (en) * | 1993-02-16 | 1995-02-07 | Vlsi Technology, Inc. | Method for manufacturing anti-fuse structures |
US5270251A (en) * | 1993-02-25 | 1993-12-14 | Massachusetts Institute Of Technology | Incoherent radiation regulated voltage programmable link |
US5332929A (en) * | 1993-04-08 | 1994-07-26 | Xilinx, Inc. | Power management for programmable logic devices |
US5521423A (en) * | 1993-04-19 | 1996-05-28 | Kawasaki Steel Corporation | Dielectric structure for anti-fuse programming element |
US5300456A (en) * | 1993-06-17 | 1994-04-05 | Texas Instruments Incorporated | Metal-to-metal antifuse structure |
JP3256603B2 (en) * | 1993-07-05 | 2002-02-12 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
US5572061A (en) * | 1993-07-07 | 1996-11-05 | Actel Corporation | ESD protection device for antifuses with top polysilicon electrode |
US5390141A (en) * | 1993-07-07 | 1995-02-14 | Massachusetts Institute Of Technology | Voltage programmable links programmed with low current transistors |
US5581111A (en) * | 1993-07-07 | 1996-12-03 | Actel Corporation | Dielectric-polysilicon-dielectric antifuse for field programmable logic applications |
US5449947A (en) * | 1993-07-07 | 1995-09-12 | Actel Corporation | Read-disturb tolerant metal-to-metal antifuse and fabrication method |
US5391518A (en) * | 1993-09-24 | 1995-02-21 | Vlsi Technology, Inc. | Method of making a field programmable read only memory (ROM) cell using an amorphous silicon fuse with buried contact polysilicon and metal electrodes |
US5485031A (en) * | 1993-11-22 | 1996-01-16 | Actel Corporation | Antifuse structure suitable for VLSI application |
US5391513A (en) * | 1993-12-22 | 1995-02-21 | Vlsi Technology, Inc. | Wet/dry anti-fuse via etch |
US5403778A (en) * | 1994-01-06 | 1995-04-04 | Texas Instruments Incorporated | Limited metal reaction for contact cleaning and improved metal-to-metal antifuse contact cleaning method |
US5412593A (en) * | 1994-01-12 | 1995-05-02 | Texas Instruments Incorporated | Fuse and antifuse reprogrammable link for integrated circuits |
US5834824A (en) | 1994-02-08 | 1998-11-10 | Prolinx Labs Corporation | Use of conductive particles in a nonconductive body as an integrated circuit antifuse |
US5440167A (en) * | 1994-02-23 | 1995-08-08 | Crosspoint Solutions, Inc. | Antifuse with double via contact and method of manufacture therefor |
US5514900A (en) * | 1994-03-31 | 1996-05-07 | Crosspoint Solutions, Inc. | Mutlilayered antifuse with intermediate metal layer |
US5572062A (en) * | 1994-03-31 | 1996-11-05 | Crosspoint Solutions, Inc. | Antifuse with silicon spacers |
JPH07321287A (en) | 1994-05-20 | 1995-12-08 | Texas Instr Inc <Ti> | Anti fuse that is used in the user *(programmable) accumulation electron circuit and its preparation |
US5521440A (en) * | 1994-05-25 | 1996-05-28 | Crosspoint Solutions, Inc. | Low-capacitance, plugged antifuse and method of manufacture therefor |
US5493146A (en) * | 1994-07-14 | 1996-02-20 | Vlsi Technology, Inc. | Anti-fuse structure for reducing contamination of the anti-fuse material |
US6159836A (en) * | 1994-09-16 | 2000-12-12 | Stmicroelectronics, Inc. | Method for forming programmable contact structure |
US5592016A (en) * | 1995-04-14 | 1997-01-07 | Actel Corporation | Antifuse with improved antifuse material |
US5789764A (en) | 1995-04-14 | 1998-08-04 | Actel Corporation | Antifuse with improved antifuse material |
US5521116A (en) | 1995-04-24 | 1996-05-28 | Texas Instruments Incorporated | Sidewall formation process for a top lead fuse |
EP0774164A1 (en) | 1995-06-02 | 1997-05-21 | Actel Corporation | Raised tungsten plug antifuse and fabrication process |
US5986322A (en) * | 1995-06-06 | 1999-11-16 | Mccollum; John L. | Reduced leakage antifuse structure |
US5844297A (en) | 1995-09-26 | 1998-12-01 | Symbios, Inc. | Antifuse device for use on a field programmable interconnect chip |
US5708291A (en) | 1995-09-29 | 1998-01-13 | Intel Corporation | Silicide agglomeration fuse device |
US5759876A (en) | 1995-11-01 | 1998-06-02 | United Technologies Corporation | Method of making an antifuse structure using a metal cap layer |
US5658819A (en) | 1995-11-01 | 1997-08-19 | United Technologies Corporation | Antifuse structure and process for manufacturing the same |
US5573971A (en) * | 1995-12-29 | 1996-11-12 | Cypress Semiconductor, Corporation | Planar antifuse and method of fabrication |
US5783467A (en) | 1995-12-29 | 1998-07-21 | Vlsi Technology, Inc. | Method of making antifuse structures using implantation of both neutral and dopant species |
US5602053A (en) | 1996-04-08 | 1997-02-11 | Chartered Semidconductor Manufacturing Pte, Ltd. | Method of making a dual damascene antifuse structure |
JPH1056066A (en) | 1996-08-08 | 1998-02-24 | Matsushita Electron Corp | Anti-fuse device and manufacture thereof |
US5831325A (en) | 1996-08-16 | 1998-11-03 | Zhang; Guobiao | Antifuse structures with improved manufacturability |
US6023431A (en) | 1996-10-03 | 2000-02-08 | Micron Technology, Inc. | Low current redundancy anti-fuse method and apparatus |
US5852323A (en) | 1997-01-16 | 1998-12-22 | Xilinx, Inc. | Electrically programmable antifuse using metal penetration of a P-N junction |
US5811870A (en) | 1997-05-02 | 1998-09-22 | International Business Machines Corporation | Antifuse structure |
-
1996
- 1996-05-31 EP EP96922380A patent/EP0774164A1/en not_active Ceased
- 1996-05-31 WO PCT/US1996/008263 patent/WO1996038861A1/en not_active Application Discontinuation
- 1996-05-31 JP JP8536750A patent/JP3027195B2/en not_active Expired - Fee Related
- 1996-05-31 CA CA002196557A patent/CA2196557A1/en not_active Abandoned
- 1996-05-31 KR KR1019970700695A patent/KR100252447B1/en not_active IP Right Cessation
- 1996-06-04 US US08/657,971 patent/US5804500A/en not_active Expired - Lifetime
- 1996-12-23 US US08/772,241 patent/US5920109A/en not_active Expired - Lifetime
-
1998
- 1998-04-17 US US09/062,298 patent/US6124193A/en not_active Expired - Lifetime
-
2000
- 2000-09-25 US US09/669,035 patent/US6437365B1/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0416903A2 (en) * | 1989-09-07 | 1991-03-13 | Quicklogic Corporation | Method of fabricating a programmable interconnect structure |
WO1992021154A1 (en) * | 1991-05-10 | 1992-11-26 | Quicklogic Corporation | Amorphous silicon antifuses and methods for fabrication thereof |
US5308795A (en) * | 1992-11-04 | 1994-05-03 | Actel Corporation | Above via metal-to-metal antifuse |
JPH06302701A (en) * | 1993-04-19 | 1994-10-28 | Kawasaki Steel Corp | Semiconductor device and fabrication thereof |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 95, no. 01 28 February 1995 (1995-02-28) * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6358268B1 (en) | 2000-03-06 | 2002-03-19 | Robert B. Hunt | Surgical instrument |
DE10030445A1 (en) * | 2000-06-22 | 2002-01-10 | Infineon Technologies Ag | connecting element |
Also Published As
Publication number | Publication date |
---|---|
US6124193A (en) | 2000-09-26 |
US5920109A (en) | 1999-07-06 |
JPH10502774A (en) | 1998-03-10 |
KR100252447B1 (en) | 2000-04-15 |
US6437365B1 (en) | 2002-08-20 |
JP3027195B2 (en) | 2000-03-27 |
CA2196557A1 (en) | 1996-12-05 |
KR970705182A (en) | 1997-09-06 |
US5804500A (en) | 1998-09-08 |
EP0774164A1 (en) | 1997-05-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5804500A (en) | Fabrication process for raised tungsten plug antifuse | |
US5576576A (en) | Above via metal-to-metal antifuse | |
US5451810A (en) | Metal-to-metal antifuse structure | |
US5763299A (en) | Reduced leakage antifuse fabrication method | |
US5387812A (en) | Electrically programmable antifuse having a metal to metal structure | |
US7615440B2 (en) | Capacitor and method of manufacturing a capacitor | |
US5789764A (en) | Antifuse with improved antifuse material | |
EP0907968A1 (en) | Integrated circuit device and method of making the same | |
US6576508B2 (en) | Formation of a frontside contact on silicon-on-insulator substrate | |
US5639684A (en) | Method of making a low capacitance antifuse having a pillar located between the first and second metal layers | |
EP1384264B1 (en) | Metal-to-metal antifuse structure and fabrication method | |
US5929505A (en) | Inter-metal-wiring antifuse device provided by self-alignment | |
JP2001168285A (en) | Semiconductor device and its manufacturing method | |
KR100280565B1 (en) | Metal to Metal Capacitor Integration Process | |
US6794702B2 (en) | Semiconductor device and fabrication method thereof | |
EP0529820B1 (en) | Elevated metal-to-metal antifuse structures and fabrication processes | |
US6030860A (en) | Elevated substrate formation and local interconnect integrated fabrication | |
US6492206B2 (en) | Antifuse with improved radiation SEDR | |
KR100308369B1 (en) | Capacitor Structure for Integrated Circuit and Manufacturing Method Thereof | |
JPH05166941A (en) | Semiconductor self-alignment contact structure and manufacture thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): CA JP KR |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1019970700695 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2196557 Country of ref document: CA Ref document number: 1996922380 Country of ref document: EP |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWP | Wipo information: published in national office |
Ref document number: 1996922380 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1019970700695 Country of ref document: KR |
|
WWG | Wipo information: grant in national office |
Ref document number: 1019970700695 Country of ref document: KR |
|
WWR | Wipo information: refused in national office |
Ref document number: 1996922380 Country of ref document: EP |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 1996922380 Country of ref document: EP |