WO1997004478A3 - Plasma treatment apparatus for large area substrates - Google Patents
Plasma treatment apparatus for large area substrates Download PDFInfo
- Publication number
- WO1997004478A3 WO1997004478A3 PCT/US1996/011213 US9611213W WO9704478A3 WO 1997004478 A3 WO1997004478 A3 WO 1997004478A3 US 9611213 W US9611213 W US 9611213W WO 9704478 A3 WO9704478 A3 WO 9704478A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plasma
- sources
- large area
- area substrates
- treatment apparatus
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP96922642A EP0842307B1 (en) | 1995-07-19 | 1996-07-02 | System for the plasma treatment of large area substrates |
JP50669797A JP4128217B2 (en) | 1995-07-19 | 1996-07-02 | System for plasma processing of large area substrates |
DE69625068T DE69625068D1 (en) | 1995-07-19 | 1996-07-02 | SYSTEM FOR PLASMA TREATMENT OF LARGE AREA SUBSTRATES |
CA002227233A CA2227233C (en) | 1995-07-19 | 1996-07-02 | Plasma treatment apparatus for large area substrates |
AU63449/96A AU718941B2 (en) | 1995-07-19 | 1996-07-02 | System for the plasma treatment of large area substrates |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/503,973 | 1995-07-19 | ||
US08/503,973 US5653811A (en) | 1995-07-19 | 1995-07-19 | System for the plasma treatment of large area substrates |
Publications (3)
Publication Number | Publication Date |
---|---|
WO1997004478A2 WO1997004478A2 (en) | 1997-02-06 |
WO1997004478A3 true WO1997004478A3 (en) | 1997-03-20 |
WO1997004478B1 WO1997004478B1 (en) | 1997-05-15 |
Family
ID=24004315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1996/011213 WO1997004478A2 (en) | 1995-07-19 | 1996-07-02 | Plasma treatment apparatus for large area substrates |
Country Status (9)
Country | Link |
---|---|
US (3) | US5653811A (en) |
EP (1) | EP0842307B1 (en) |
JP (1) | JP4128217B2 (en) |
KR (1) | KR19990029069A (en) |
CN (1) | CN1192788A (en) |
AU (1) | AU718941B2 (en) |
CA (1) | CA2227233C (en) |
DE (1) | DE69625068D1 (en) |
WO (1) | WO1997004478A2 (en) |
Families Citing this family (200)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6074512A (en) * | 1991-06-27 | 2000-06-13 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
US5653811A (en) | 1995-07-19 | 1997-08-05 | Chan; Chung | System for the plasma treatment of large area substrates |
US5907221A (en) * | 1995-08-16 | 1999-05-25 | Applied Materials, Inc. | Inductively coupled plasma reactor with an inductive coil antenna having independent loops |
JP4654176B2 (en) * | 1996-02-22 | 2011-03-16 | 住友精密工業株式会社 | Inductively coupled plasma reactor |
US6116185A (en) * | 1996-05-01 | 2000-09-12 | Rietzel; James G. | Gas injector for plasma enhanced chemical vapor deposition |
JP3437376B2 (en) | 1996-05-21 | 2003-08-18 | キヤノン株式会社 | Plasma processing apparatus and processing method |
US5846883A (en) * | 1996-07-10 | 1998-12-08 | Cvc, Inc. | Method for multi-zone high-density inductively-coupled plasma generation |
US6140773A (en) * | 1996-09-10 | 2000-10-31 | The Regents Of The University Of California | Automated control of linear constricted plasma source array |
GB9620151D0 (en) * | 1996-09-27 | 1996-11-13 | Surface Tech Sys Ltd | Plasma processing apparatus |
KR100505176B1 (en) | 1996-09-27 | 2005-10-10 | 서페이스 테크놀로지 시스템스 피엘씨 | Plasma Processing Equipment |
US6534922B2 (en) | 1996-09-27 | 2003-03-18 | Surface Technology Systems, Plc | Plasma processing apparatus |
US6035868A (en) * | 1997-03-31 | 2000-03-14 | Lam Research Corporation | Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber |
US6033974A (en) | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
US5985742A (en) * | 1997-05-12 | 1999-11-16 | Silicon Genesis Corporation | Controlled cleavage process and device for patterned films |
US20070122997A1 (en) | 1998-02-19 | 2007-05-31 | Silicon Genesis Corporation | Controlled process and resulting device |
US6291313B1 (en) | 1997-05-12 | 2001-09-18 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US6027988A (en) * | 1997-05-28 | 2000-02-22 | The Regents Of The University Of California | Method of separating films from bulk substrates by plasma immersion ion implantation |
GB9711273D0 (en) | 1997-06-03 | 1997-07-30 | Trikon Equip Ltd | Electrostatic chucks |
US6158384A (en) * | 1997-06-05 | 2000-12-12 | Applied Materials, Inc. | Plasma reactor with multiple small internal inductive antennas |
US6178920B1 (en) | 1997-06-05 | 2001-01-30 | Applied Materials, Inc. | Plasma reactor with internal inductive antenna capable of generating helicon wave |
US5989349A (en) * | 1997-06-24 | 1999-11-23 | Applied Materials, Inc. | Diagnostic pedestal assembly for a semiconductor wafer processing system |
US6548382B1 (en) | 1997-07-18 | 2003-04-15 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
US6136165A (en) * | 1997-11-26 | 2000-10-24 | Cvc Products, Inc. | Apparatus for inductively-coupled-plasma-enhanced ionized physical-vapor deposition |
US6228176B1 (en) * | 1998-02-11 | 2001-05-08 | Silicon Genesis Corporation | Contoured platen design for plasma immerson ion implantation |
US6186091B1 (en) * | 1998-02-11 | 2001-02-13 | Silicon Genesis Corporation | Shielded platen design for plasma immersion ion implantation |
US6217724B1 (en) * | 1998-02-11 | 2001-04-17 | Silicon General Corporation | Coated platen design for plasma immersion ion implantation |
US6120660A (en) * | 1998-02-11 | 2000-09-19 | Silicon Genesis Corporation | Removable liner design for plasma immersion ion implantation |
US6269765B1 (en) * | 1998-02-11 | 2001-08-07 | Silicon Genesis Corporation | Collection devices for plasma immersion ion implantation |
US6274459B1 (en) | 1998-02-17 | 2001-08-14 | Silicon Genesis Corporation | Method for non mass selected ion implant profile control |
US6034781A (en) * | 1998-05-26 | 2000-03-07 | Wisconsin Alumni Research Foundation | Electro-optical plasma probe |
US6291326B1 (en) | 1998-06-23 | 2001-09-18 | Silicon Genesis Corporation | Pre-semiconductor process implant and post-process film separation |
US6020592A (en) | 1998-08-03 | 2000-02-01 | Varian Semiconductor Equipment Associates, Inc. | Dose monitor for plasma doping system |
US6300643B1 (en) | 1998-08-03 | 2001-10-09 | Varian Semiconductor Equipment Associates, Inc. | Dose monitor for plasma doping system |
US6050218A (en) * | 1998-09-28 | 2000-04-18 | Eaton Corporation | Dosimetry cup charge collection in plasma immersion ion implantation |
US6300227B1 (en) | 1998-12-01 | 2001-10-09 | Silicon Genesis Corporation | Enhanced plasma mode and system for plasma immersion ion implantation |
AU1745700A (en) * | 1998-12-01 | 2000-06-19 | Silicon Genesis Corporation | Enhanced plasma mode, method, and system for plasma immersion ion implantation |
KR100687971B1 (en) | 1998-12-30 | 2007-02-27 | 동경 엘렉트론 주식회사 | Large area plasma source |
KR100745495B1 (en) * | 1999-03-10 | 2007-08-03 | 동경 엘렉트론 주식회사 | Semiconductor fabrication method and semiconductor fabrication equipment |
US6458723B1 (en) | 1999-06-24 | 2002-10-01 | Silicon Genesis Corporation | High temperature implant apparatus |
US6199506B1 (en) * | 1999-06-30 | 2001-03-13 | Novellus Systems, Inc. | Radio frequency supply circuit for in situ cleaning of plasma-enhanced chemical vapor deposition chamber using NF3 or NF3/He mixture |
KR20020019596A (en) * | 1999-08-06 | 2002-03-12 | 브라이언 알. 바흐맨 | System and method for providing implant dose uniformity across the surface of a substrate |
US6221740B1 (en) | 1999-08-10 | 2001-04-24 | Silicon Genesis Corporation | Substrate cleaving tool and method |
US6263941B1 (en) | 1999-08-10 | 2001-07-24 | Silicon Genesis Corporation | Nozzle for cleaving substrates |
US6500732B1 (en) | 1999-08-10 | 2002-12-31 | Silicon Genesis Corporation | Cleaving process to fabricate multilayered substrates using low implantation doses |
US6706541B1 (en) | 1999-10-20 | 2004-03-16 | Advanced Micro Devices, Inc. | Method and apparatus for controlling wafer uniformity using spatially resolved sensors |
JP3645768B2 (en) * | 1999-12-07 | 2005-05-11 | シャープ株式会社 | Plasma process equipment |
KR100323613B1 (en) * | 2000-03-29 | 2002-02-19 | 박세근 | Apparatus for generating a large area plasma source |
US6653852B1 (en) | 2000-03-31 | 2003-11-25 | Lam Research Corporation | Wafer integrated plasma probe assembly array |
US6685798B1 (en) * | 2000-07-06 | 2004-02-03 | Applied Materials, Inc | Plasma reactor having a symmetrical parallel conductor coil antenna |
US6578514B2 (en) * | 2000-07-13 | 2003-06-17 | Duratek Inc. | Modular device of tubular plasma source |
US7166524B2 (en) * | 2000-08-11 | 2007-01-23 | Applied Materials, Inc. | Method for ion implanting insulator material to reduce dielectric constant |
US6893907B2 (en) * | 2002-06-05 | 2005-05-17 | Applied Materials, Inc. | Fabrication of silicon-on-insulator structure using plasma immersion ion implantation |
US6939434B2 (en) * | 2000-08-11 | 2005-09-06 | Applied Materials, Inc. | Externally excited torroidal plasma source with magnetic control of ion distribution |
US7223676B2 (en) | 2002-06-05 | 2007-05-29 | Applied Materials, Inc. | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer |
US7294563B2 (en) * | 2000-08-10 | 2007-11-13 | Applied Materials, Inc. | Semiconductor on insulator vertical transistor fabrication and doping process |
US7303982B2 (en) * | 2000-08-11 | 2007-12-04 | Applied Materials, Inc. | Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage |
US7479456B2 (en) | 2004-08-26 | 2009-01-20 | Applied Materials, Inc. | Gasless high voltage high contact force wafer contact-cooling electrostatic chuck |
US7094670B2 (en) | 2000-08-11 | 2006-08-22 | Applied Materials, Inc. | Plasma immersion ion implantation process |
US7430984B2 (en) * | 2000-08-11 | 2008-10-07 | Applied Materials, Inc. | Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements |
US7137354B2 (en) * | 2000-08-11 | 2006-11-21 | Applied Materials, Inc. | Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage |
US7465478B2 (en) | 2000-08-11 | 2008-12-16 | Applied Materials, Inc. | Plasma immersion ion implantation process |
US7320734B2 (en) * | 2000-08-11 | 2008-01-22 | Applied Materials, Inc. | Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage |
US7288491B2 (en) | 2000-08-11 | 2007-10-30 | Applied Materials, Inc. | Plasma immersion ion implantation process |
US7183177B2 (en) * | 2000-08-11 | 2007-02-27 | Applied Materials, Inc. | Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement |
US7037813B2 (en) * | 2000-08-11 | 2006-05-02 | Applied Materials, Inc. | Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage |
US7309997B1 (en) * | 2000-09-15 | 2007-12-18 | Varian Semiconductor Equipment Associates, Inc. | Monitor system and method for semiconductor processes |
JP2002100623A (en) * | 2000-09-20 | 2002-04-05 | Fuji Daiichi Seisakusho:Kk | Thin film semiconductor manufacturing apparatus |
US6428859B1 (en) | 2000-12-06 | 2002-08-06 | Angstron Systems, Inc. | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
US6878402B2 (en) * | 2000-12-06 | 2005-04-12 | Novellus Systems, Inc. | Method and apparatus for improved temperature control in atomic layer deposition |
US6416822B1 (en) | 2000-12-06 | 2002-07-09 | Angstrom Systems, Inc. | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
AU2002232844A1 (en) * | 2000-12-06 | 2002-06-18 | Angstron Systems, Inc. | System and method for modulated ion-induced atomic layer deposition (mii-ald) |
TW519716B (en) * | 2000-12-19 | 2003-02-01 | Tokyo Electron Ltd | Wafer bias drive for a plasma source |
US6631693B2 (en) * | 2001-01-30 | 2003-10-14 | Novellus Systems, Inc. | Absorptive filter for semiconductor processing systems |
US6664740B2 (en) * | 2001-02-01 | 2003-12-16 | The Regents Of The University Of California | Formation of a field reversed configuration for magnetic and electrostatic confinement of plasma |
US7348042B2 (en) | 2001-03-19 | 2008-03-25 | Novellus Systems, Inc. | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
US6611106B2 (en) * | 2001-03-19 | 2003-08-26 | The Regents Of The University Of California | Controlled fusion in a field reversed configuration and direct energy conversion |
DE60101209T2 (en) * | 2001-04-27 | 2004-09-02 | European Community | Method and device for sequential plasma treatment |
US6673636B2 (en) | 2001-05-18 | 2004-01-06 | Applied Materails Inc. | Method of real-time plasma charging voltage measurement on powered electrode with electrostatic chuck in plasma process chambers |
US7282721B2 (en) * | 2001-08-30 | 2007-10-16 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for tuning ion implanters |
US6493078B1 (en) * | 2001-09-19 | 2002-12-10 | International Business Machines Corporation | Method and apparatus to improve coating quality |
US6590344B2 (en) * | 2001-11-20 | 2003-07-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Selectively controllable gas feed zones for a plasma reactor |
GB0208261D0 (en) * | 2002-04-10 | 2002-05-22 | Dow Corning | An atmospheric pressure plasma assembly |
JP2004043910A (en) * | 2002-07-12 | 2004-02-12 | Canon Inc | Process and apparatus for forming deposition film |
US20040016402A1 (en) * | 2002-07-26 | 2004-01-29 | Walther Steven R. | Methods and apparatus for monitoring plasma parameters in plasma doping systems |
WO2004026096A2 (en) * | 2002-09-19 | 2004-04-01 | Tokyo Electron Limited | Viewing window cleaning apparatus |
US8187377B2 (en) | 2002-10-04 | 2012-05-29 | Silicon Genesis Corporation | Non-contact etch annealing of strained layers |
US6969953B2 (en) * | 2003-06-30 | 2005-11-29 | General Electric Company | System and method for inductive coupling of an expanding thermal plasma |
US7042311B1 (en) | 2003-10-10 | 2006-05-09 | Novellus Systems, Inc. | RF delivery configuration in a plasma processing system |
US7273533B2 (en) * | 2003-11-19 | 2007-09-25 | Tokyo Electron Limited | Plasma processing system with locally-efficient inductive plasma coupling |
US7464662B2 (en) * | 2004-01-28 | 2008-12-16 | Tokyo Electron Limited | Compact, distributed inductive element for large scale inductively-coupled plasma sources |
US20050188922A1 (en) * | 2004-02-26 | 2005-09-01 | Tokyo Electron Limited. | Plasma processing unit |
US7138187B2 (en) * | 2004-03-19 | 2006-11-21 | Younger Mfg. Co. | Polyvinyl alcohol-based film exhibiting improved adhesion |
US7291360B2 (en) | 2004-03-26 | 2007-11-06 | Applied Materials, Inc. | Chemical vapor deposition plasma process using plural ion shower grids |
US20050211547A1 (en) * | 2004-03-26 | 2005-09-29 | Applied Materials, Inc. | Reactive sputter deposition plasma reactor and process using plural ion shower grids |
US7244474B2 (en) | 2004-03-26 | 2007-07-17 | Applied Materials, Inc. | Chemical vapor deposition plasma process using an ion shower grid |
US7695590B2 (en) | 2004-03-26 | 2010-04-13 | Applied Materials, Inc. | Chemical vapor deposition plasma reactor having plural ion shower grids |
US7878145B2 (en) * | 2004-06-02 | 2011-02-01 | Varian Semiconductor Equipment Associates, Inc. | Monitoring plasma ion implantation systems for fault detection and process control |
EP1605493A1 (en) * | 2004-06-07 | 2005-12-14 | HELYSSEN S.à.r.l. | Plasma processing control |
US7400096B1 (en) | 2004-07-19 | 2008-07-15 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Large area plasma source |
US7767561B2 (en) | 2004-07-20 | 2010-08-03 | Applied Materials, Inc. | Plasma immersion ion implantation reactor having an ion shower grid |
US8058156B2 (en) | 2004-07-20 | 2011-11-15 | Applied Materials, Inc. | Plasma immersion ion implantation reactor having multiple ion shower grids |
US7305935B1 (en) | 2004-08-25 | 2007-12-11 | The United States Of America As Represented By The Administration Of Nasa | Slotted antenna waveguide plasma source |
US7666464B2 (en) | 2004-10-23 | 2010-02-23 | Applied Materials, Inc. | RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor |
US7109499B2 (en) * | 2004-11-05 | 2006-09-19 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and methods for two-dimensional ion beam profiling |
ATE543925T1 (en) * | 2004-11-24 | 2012-02-15 | Oerlikon Solar Ag | VACUUM TREATMENT CHAMBER FOR VERY LARGE SUBSTRATES |
KR100670509B1 (en) * | 2005-02-01 | 2007-01-16 | 삼성에스디아이 주식회사 | Plasma display panel manufacturing equipment |
US8031824B2 (en) | 2005-03-07 | 2011-10-04 | Regents Of The University Of California | Inductive plasma source for plasma electric generation system |
US9123512B2 (en) | 2005-03-07 | 2015-09-01 | The Regents Of The Unviersity Of California | RF current drive for plasma electric generation system |
US9607719B2 (en) * | 2005-03-07 | 2017-03-28 | The Regents Of The University Of California | Vacuum chamber for plasma electric generation system |
US20060198485A1 (en) * | 2005-03-07 | 2006-09-07 | Michl Binderbauer | Plasma electric generation and propulsion system |
JP4621914B2 (en) * | 2005-04-19 | 2011-02-02 | 国立大学法人 長崎大学 | Method and apparatus for coating inner wall of extra-fine tube |
US7428915B2 (en) * | 2005-04-26 | 2008-09-30 | Applied Materials, Inc. | O-ringless tandem throttle valve for a plasma reactor chamber |
US7422775B2 (en) * | 2005-05-17 | 2008-09-09 | Applied Materials, Inc. | Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
US7109098B1 (en) | 2005-05-17 | 2006-09-19 | Applied Materials, Inc. | Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
US7312162B2 (en) * | 2005-05-17 | 2007-12-25 | Applied Materials, Inc. | Low temperature plasma deposition process for carbon layer deposition |
US20060260545A1 (en) * | 2005-05-17 | 2006-11-23 | Kartik Ramaswamy | Low temperature absorption layer deposition and high speed optical annealing system |
US7462552B2 (en) * | 2005-05-23 | 2008-12-09 | Ziptronix, Inc. | Method of detachable direct bonding at low temperatures |
CN100547726C (en) | 2005-06-03 | 2009-10-07 | Csg索拉尔有限公司 | Be used to make the method and apparatus of thin film silicon hydrogenation on glass |
US8179050B2 (en) | 2005-06-23 | 2012-05-15 | The Regents Of The University Of California | Helicon plasma source with permanent magnets |
JP2009507363A (en) * | 2005-07-27 | 2009-02-19 | シリコン・ジェネシス・コーポレーション | Method and structure for forming multiple tile portions on a plate using a controlled cleavage process |
US7312148B2 (en) * | 2005-08-08 | 2007-12-25 | Applied Materials, Inc. | Copper barrier reflow process employing high speed optical annealing |
US7323401B2 (en) * | 2005-08-08 | 2008-01-29 | Applied Materials, Inc. | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask |
US7429532B2 (en) * | 2005-08-08 | 2008-09-30 | Applied Materials, Inc. | Semiconductor substrate process using an optically writable carbon-containing mask |
US7335611B2 (en) * | 2005-08-08 | 2008-02-26 | Applied Materials, Inc. | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer |
US7466740B2 (en) * | 2005-12-07 | 2008-12-16 | Ajax Tocco Magnethermic Corporation | Induction coil having internal and external faradic rings |
US8153513B2 (en) * | 2006-07-25 | 2012-04-10 | Silicon Genesis Corporation | Method and system for continuous large-area scanning implantation process |
US8450193B2 (en) * | 2006-08-15 | 2013-05-28 | Varian Semiconductor Equipment Associates, Inc. | Techniques for temperature-controlled ion implantation |
WO2008024392A2 (en) | 2006-08-22 | 2008-02-28 | Valery Godyak | Inductive plasma source with high coupling efficiency |
US8992725B2 (en) * | 2006-08-28 | 2015-03-31 | Mattson Technology, Inc. | Plasma reactor with inductie excitation of plasma and efficient removal of heat from the excitation coil |
US7811900B2 (en) | 2006-09-08 | 2010-10-12 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a thick layer transfer process |
US8993410B2 (en) | 2006-09-08 | 2015-03-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
US9362439B2 (en) | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
US8293619B2 (en) | 2008-08-28 | 2012-10-23 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
WO2008089168A2 (en) * | 2007-01-19 | 2008-07-24 | Applied Materials, Inc. | Plasma immersion chamber |
JP5111913B2 (en) * | 2007-03-23 | 2013-01-09 | 株式会社東芝 | Opto-electric hybrid integrated circuit |
FR2917753B1 (en) * | 2007-06-20 | 2011-05-06 | Quertech Ingenierie | MULTI-SOURCE DEVICE FOR THE TREATMENT OF PIECES BY ION IMPLANTATION AND METHOD IMPLEMENTING IT |
US20090001599A1 (en) * | 2007-06-28 | 2009-01-01 | Spansion Llc | Die attachment, die stacking, and wire embedding using film |
US8528498B2 (en) * | 2007-06-29 | 2013-09-10 | Lam Research Corporation | Integrated steerability array arrangement for minimizing non-uniformity |
US9105449B2 (en) * | 2007-06-29 | 2015-08-11 | Lam Research Corporation | Distributed power arrangements for localizing power delivery |
DE102008027363B4 (en) * | 2008-06-09 | 2018-04-26 | Meyer Burger (Germany) Ag | Apparatus for treating large volume substrates in plasma and method of use |
JP5520290B2 (en) | 2008-06-11 | 2014-06-11 | インテバック・インコーポレイテッド | Semiconductor device and solar cell manufacturing method |
US8330126B2 (en) | 2008-08-25 | 2012-12-11 | Silicon Genesis Corporation | Race track configuration and method for wafering silicon solar substrates |
JP5478058B2 (en) * | 2008-12-09 | 2014-04-23 | 国立大学法人東北大学 | Plasma processing equipment |
CN101754564B (en) * | 2008-12-09 | 2014-02-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing device |
US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
JP4621287B2 (en) * | 2009-03-11 | 2011-01-26 | 株式会社イー・エム・ディー | Plasma processing equipment |
SG174289A1 (en) * | 2009-03-20 | 2011-10-28 | Solar Implant Technologies Inc | Advanced high efficiency crystalline solar cell fabrication method |
US8329557B2 (en) | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
US20100326271A1 (en) * | 2009-06-25 | 2010-12-30 | Omax Corporation | Reciprocating pump and method for making a system with enhanced dynamic seal reliability |
KR101081743B1 (en) * | 2009-08-17 | 2011-11-09 | 주성엔지니어링(주) | Appratus for treating substrate |
US8124939B2 (en) * | 2009-09-24 | 2012-02-28 | Asml Netherlands B.V. | Radiation detector |
US20110097518A1 (en) * | 2009-10-28 | 2011-04-28 | Applied Materials, Inc. | Vertically integrated processing chamber |
US20110120375A1 (en) * | 2009-11-23 | 2011-05-26 | Jusung Engineering Co., Ltd. | Apparatus for processing substrate |
KR101587053B1 (en) * | 2009-11-23 | 2016-01-21 | 주성엔지니어링(주) | Appratus for treating substrate |
KR101589109B1 (en) * | 2009-11-23 | 2016-01-28 | 주성엔지니어링(주) | Appratus for treating substrate |
US9111729B2 (en) * | 2009-12-03 | 2015-08-18 | Lam Research Corporation | Small plasma chamber systems and methods |
CN102834905B (en) * | 2010-02-09 | 2016-05-11 | 因特瓦克公司 | The adjustable shadow mask assembly that solar cell uses in manufacturing |
WO2011104803A1 (en) * | 2010-02-25 | 2011-09-01 | シャープ株式会社 | Plasma generator |
JP5403151B2 (en) * | 2010-03-31 | 2014-01-29 | 東京エレクトロン株式会社 | Dielectric window for plasma processing apparatus, plasma processing apparatus, and method for attaching dielectric window for plasma processing apparatus |
US20110278260A1 (en) * | 2010-05-14 | 2011-11-17 | Applied Materials, Inc. | Inductive plasma source with metallic shower head using b-field concentrator |
KR101241049B1 (en) | 2011-08-01 | 2013-03-15 | 주식회사 플라즈마트 | Plasma generation apparatus and plasma generation method |
KR101246191B1 (en) * | 2011-10-13 | 2013-03-21 | 주식회사 윈텔 | Plasma generation apparatus and substrate processing apparatus |
CN104428883B (en) | 2011-11-08 | 2017-02-22 | 因特瓦克公司 | substrate processing system and method |
US9997261B2 (en) | 2011-11-14 | 2018-06-12 | The Regents Of The University Of California | Systems and methods for forming and maintaining a high performance FRC |
US8809803B2 (en) * | 2012-08-13 | 2014-08-19 | Varian Semiconductor Equipment Associates, Inc. | Inductively coupled plasma ion source with multiple antennas for wide ion beam |
WO2014075163A1 (en) * | 2012-11-15 | 2014-05-22 | James Andrew Leskosek | Plasma gate |
WO2014100506A1 (en) | 2012-12-19 | 2014-06-26 | Intevac, Inc. | Grid for plasma ion implant |
US9783884B2 (en) * | 2013-03-14 | 2017-10-10 | Varian Semiconductor Equipment Associates, Inc. | Method for implementing low dose implant in a plasma system |
JP6101535B2 (en) * | 2013-03-27 | 2017-03-22 | 株式会社Screenホールディングス | Plasma processing equipment |
US20150042017A1 (en) * | 2013-08-06 | 2015-02-12 | Applied Materials, Inc. | Three-dimensional (3d) processing and printing with plasma sources |
JP6469688B2 (en) | 2013-08-16 | 2019-02-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | An elongated capacitively coupled plasma source for high temperature and low pressure environments |
PL3312843T3 (en) | 2013-09-24 | 2020-05-18 | Tae Technologies, Inc. | Systems for forming and maintaining a high performance frc |
JP2015074792A (en) * | 2013-10-07 | 2015-04-20 | 株式会社Screenホールディングス | Plasma cvd device |
US9299536B2 (en) * | 2013-10-17 | 2016-03-29 | Varian Semiconductor Equipment Associates, Inc. | Wide metal-free plasma flood gun |
US9336997B2 (en) | 2014-03-17 | 2016-05-10 | Applied Materials, Inc. | RF multi-feed structure to improve plasma uniformity |
US9433071B2 (en) * | 2014-06-13 | 2016-08-30 | Plasma Innovations, LLC | Dielectric barrier discharge plasma generator |
HUE055365T2 (en) | 2014-10-13 | 2021-11-29 | Tae Tech Inc | Method for merging and compressing compact tori |
BR112017008768B1 (en) | 2014-10-30 | 2022-12-06 | Tae Technologies, Inc | METHOD AND SYSTEM FOR GENERATING AND MAINTAINING A MAGNETIC FIELD WITH A REVERSE FIELD CONFIGURATION |
KR101682881B1 (en) * | 2014-12-05 | 2016-12-06 | 인베니아 주식회사 | An plasma generating module and plasma processing apparatus comprising the same |
US9646843B2 (en) * | 2014-12-08 | 2017-05-09 | Applied Materials, Inc. | Tunable magnetic field to improve uniformity |
EA036012B1 (en) | 2015-05-12 | 2020-09-14 | Таэ Текнолоджиз, Инк. | Systems and methods for reducing undesired eddy currents |
US10553411B2 (en) * | 2015-09-10 | 2020-02-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Ion collector for use in plasma systems |
UA126789C2 (en) | 2015-11-13 | 2023-02-08 | Тае Текнолоджиз, Інк. | Systems and methods for frc plasma position stability |
US9721759B1 (en) * | 2016-04-04 | 2017-08-01 | Aixtron Se | System and method for distributing RF power to a plasma source |
KR101798384B1 (en) * | 2016-05-03 | 2017-11-17 | (주)브이앤아이솔루션 | RF antenna structure for inductively coupled plasma processing apparatus |
CA3041826A1 (en) | 2016-10-28 | 2018-05-03 | Tae Technologies, Inc. | Systems and methods for improved sustainment of a high performance frc elevated energies utilizing neutral beam injectors with tunable beam energies |
EA201991117A1 (en) | 2016-11-04 | 2019-09-30 | Таэ Текнолоджиз, Инк. | SYSTEMS AND METHODS OF IMPROVED SUPPORT OF HIGH-EFFICIENT CONFIGURATION WITH A REVERSED FIELD WITH VACUUMING WITH CAPTURE OF A MULTI-SCALE TYPE |
CN116170928A (en) | 2016-11-15 | 2023-05-26 | 阿尔法能源技术公司 | System and method for improved support for high performance FRC and higher harmonic fast wave electronic heating in high performance FRC |
US11339477B2 (en) * | 2016-11-30 | 2022-05-24 | Jiangsu Favored Nanotechnology Co., LTD | Plasma polymerization coating apparatus and process |
CN106756888B (en) | 2016-11-30 | 2018-07-13 | 江苏菲沃泰纳米科技有限公司 | A kind of nano-coating equipment rotation frame equipments for goods |
CN106622824B (en) * | 2016-11-30 | 2018-10-12 | 江苏菲沃泰纳米科技有限公司 | A kind of plasma polymerized coating device |
US20180174801A1 (en) * | 2016-12-21 | 2018-06-21 | Ulvac Technologies, Inc. | Apparatuses and methods for surface treatment |
US10808688B1 (en) | 2017-07-03 | 2020-10-20 | Omax Corporation | High pressure pumps having a check valve keeper and associated systems and methods |
KR102009348B1 (en) | 2017-09-20 | 2019-08-09 | 주식회사 유진테크 | Batch type plasma substrate processing apparatus |
DE102018113444B3 (en) | 2018-06-06 | 2019-10-10 | Meyer Burger (Germany) Gmbh | Linear microwave plasma source with separate plasma spaces |
US11037765B2 (en) * | 2018-07-03 | 2021-06-15 | Tokyo Electron Limited | Resonant structure for electron cyclotron resonant (ECR) plasma ionization |
KR20230005840A (en) | 2020-03-30 | 2023-01-10 | 하이퍼썸, 인크. | Cylinder for liquid jet pump with multifunctional connecting longitudinal ends |
US11776793B2 (en) | 2020-11-13 | 2023-10-03 | Applied Materials, Inc. | Plasma source with ceramic electrode plate |
CN114453345B (en) * | 2021-12-30 | 2023-04-11 | 广东鼎泰高科技术股份有限公司 | Plasma cleaning system |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59193904A (en) * | 1983-04-18 | 1984-11-02 | Matsushita Electric Ind Co Ltd | Apparatus for forming thin film of polymer |
US4846928A (en) * | 1987-08-04 | 1989-07-11 | Texas Instruments, Incorporated | Process and apparatus for detecting aberrations in production process operations |
US4887005A (en) * | 1987-09-15 | 1989-12-12 | Rough J Kirkwood H | Multiple electrode plasma reactor power distribution system |
US5273610A (en) * | 1992-06-23 | 1993-12-28 | Association Institutions For Material Sciences, Inc. | Apparatus and method for determining power in plasma processing |
US5368710A (en) * | 1992-05-14 | 1994-11-29 | Lam Research Corporation | Method of treating an article with a plasma apparatus in which a uniform electric field is induced by a dielectric window |
Family Cites Families (114)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2245779B1 (en) * | 1973-09-28 | 1978-02-10 | Cit Alcatel | |
US3855110A (en) | 1973-11-15 | 1974-12-17 | United Aircraft Corp | Cylindrical rf sputtering apparatus |
US3926147A (en) | 1974-11-15 | 1975-12-16 | Mc Donnell Douglas Corp | Glow discharge-tumbling vapor deposition apparatus |
US4042128A (en) | 1975-11-26 | 1977-08-16 | Airco, Inc. | Substrate transfer apparatus for a vacuum coating system |
US4233109A (en) * | 1976-01-16 | 1980-11-11 | Zaidan Hojin Handotai Kenkyu Shinkokai | Dry etching method |
JPS6029295B2 (en) | 1979-08-16 | 1985-07-10 | 舜平 山崎 | Non-single crystal film formation method |
US4322661A (en) | 1979-12-26 | 1982-03-30 | Huges Aircraft Company | Cross-field plasma mode electric conduction control device |
US4304983A (en) | 1980-06-26 | 1981-12-08 | Rca Corporation | Plasma etching device and process |
US4345968A (en) * | 1981-08-27 | 1982-08-24 | Ncr Corporation | End point detection using gas flow |
JPH06105597B2 (en) | 1982-08-30 | 1994-12-21 | 株式会社日立製作所 | Microwave plasma source |
US4500563A (en) * | 1982-12-15 | 1985-02-19 | Pacific Western Systems, Inc. | Independently variably controlled pulsed R.F. plasma chemical vapor processing |
US4811684A (en) | 1984-11-26 | 1989-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Photo CVD apparatus, with deposition prevention in light source chamber |
US4566403A (en) * | 1985-01-30 | 1986-01-28 | Sovonics Solar Systems | Apparatus for microwave glow discharge deposition |
US6113701A (en) | 1985-02-14 | 2000-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method, and system |
CA1247757A (en) | 1985-05-03 | 1988-12-28 | The Australian National University | Method and apparatus for producing large volume magnetoplasmas |
FR2583250B1 (en) | 1985-06-07 | 1989-06-30 | France Etat | METHOD AND DEVICE FOR EXCITTING A MICROWAVE PLASMA WITH ELECTRONIC CYCLOTRONIC RESONANCE |
US4756882A (en) | 1985-06-21 | 1988-07-12 | Surgikos Inc. | Hydrogen peroxide plasma sterilization system |
US4632719A (en) | 1985-09-18 | 1986-12-30 | Varian Associates, Inc. | Semiconductor etching apparatus with magnetic array and vertical shield |
JP2635021B2 (en) * | 1985-09-26 | 1997-07-30 | 宣夫 御子柴 | Deposition film forming method and apparatus used for the same |
US4826646A (en) | 1985-10-29 | 1989-05-02 | Energy/Matter Conversion Corporation, Inc. | Method and apparatus for controlling charged particles |
KR880000215A (en) | 1986-06-10 | 1988-03-24 | 나까므라 히사오 | Plasma treatment apparatus for sheet-like objects |
JPS6393881A (en) * | 1986-10-08 | 1988-04-25 | Anelva Corp | Plasma treatment apparatus |
US4951601A (en) | 1986-12-19 | 1990-08-28 | Applied Materials, Inc. | Multi-chamber integrated process system |
US4764394A (en) | 1987-01-20 | 1988-08-16 | Wisconsin Alumni Research Foundation | Method and apparatus for plasma source ion implantation |
US4847792A (en) * | 1987-05-04 | 1989-07-11 | Texas Instruments Incorporated | Process and apparatus for detecting aberrations in production process operations |
US5015353A (en) * | 1987-09-30 | 1991-05-14 | The United States Of America As Represented By The Secretary Of The Navy | Method for producing substoichiometric silicon nitride of preselected proportions |
GB2212974B (en) | 1987-11-25 | 1992-02-12 | Fuji Electric Co Ltd | Plasma processing apparatus |
US4853250A (en) * | 1988-05-11 | 1989-08-01 | Universite De Sherbrooke | Process of depositing particulate material on a substrate |
JP2670623B2 (en) * | 1988-09-19 | 1997-10-29 | アネルバ株式会社 | Microwave plasma processing equipment |
US4952273A (en) * | 1988-09-21 | 1990-08-28 | Microscience, Inc. | Plasma generation in electron cyclotron resonance |
US4996077A (en) * | 1988-10-07 | 1991-02-26 | Texas Instruments Incorporated | Distributed ECR remote plasma processing and apparatus |
US5202095A (en) * | 1988-12-27 | 1993-04-13 | Matsushita Electric Industrial Co., Ltd. | Microwave plasma processor |
EP0379828B1 (en) * | 1989-01-25 | 1995-09-27 | International Business Machines Corporation | Radio frequency induction/multipole plasma processing tool |
GB8905075D0 (en) * | 1989-03-06 | 1989-04-19 | Nordiko Ltd | Electrode assembly and apparatus |
US5133826A (en) * | 1989-03-09 | 1992-07-28 | Applied Microwave Plasma Concepts, Inc. | Electron cyclotron resonance plasma source |
US5370765A (en) * | 1989-03-09 | 1994-12-06 | Applied Microwave Plasma Concepts, Inc. | Electron cyclotron resonance plasma source and method of operation |
US5203960A (en) * | 1989-03-09 | 1993-04-20 | Applied Microwave Plasma Concepts, Inc. | Method of operation of electron cyclotron resonance plasma source |
US5032205A (en) | 1989-05-05 | 1991-07-16 | Wisconsin Alumni Research Foundation | Plasma etching apparatus with surface magnetic fields |
US5421891A (en) | 1989-06-13 | 1995-06-06 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
US4990229A (en) | 1989-06-13 | 1991-02-05 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
US5122251A (en) | 1989-06-13 | 1992-06-16 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
US5061838A (en) | 1989-06-23 | 1991-10-29 | Massachusetts Institute Of Technology | Toroidal electron cyclotron resonance reactor |
US4948458A (en) * | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
US6068784A (en) * | 1989-10-03 | 2000-05-30 | Applied Materials, Inc. | Process used in an RF coupled plasma reactor |
US5183775A (en) | 1990-01-23 | 1993-02-02 | Applied Materials, Inc. | Method for forming capacitor in trench of semiconductor wafer by implantation of trench surfaces with oxygen |
DE4114108C1 (en) * | 1991-04-30 | 1991-12-19 | Schott Glaswerke, 6500 Mainz, De | |
JPH0810634B2 (en) * | 1990-06-01 | 1996-01-31 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Microwave-fed material / plasma processing system |
US5707486A (en) | 1990-07-31 | 1998-01-13 | Applied Materials, Inc. | Plasma reactor using UHF/VHF and RF triode source, and process |
US5304279A (en) | 1990-08-10 | 1994-04-19 | International Business Machines Corporation | Radio frequency induction/multipole plasma processing tool |
US5296272A (en) | 1990-10-10 | 1994-03-22 | Hughes Aircraft Company | Method of implanting ions from a plasma into an object |
US5178739A (en) | 1990-10-31 | 1993-01-12 | International Business Machines Corporation | Apparatus for depositing material into high aspect ratio holes |
US5286296A (en) | 1991-01-10 | 1994-02-15 | Sony Corporation | Multi-chamber wafer process equipment having plural, physically communicating transfer means |
US5304282A (en) | 1991-04-17 | 1994-04-19 | Flamm Daniel L | Processes depending on plasma discharges sustained in a helical resonator |
JPH04362091A (en) * | 1991-06-05 | 1992-12-15 | Mitsubishi Heavy Ind Ltd | Plasma chemical vapor deposition apparatus |
US5772832A (en) | 1991-06-27 | 1998-06-30 | Applied Materials, Inc | Process for etching oxides in an electromagnetically coupled planar plasma apparatus |
US5198725A (en) | 1991-07-12 | 1993-03-30 | Lam Research Corporation | Method of producing flat ecr layer in microwave plasma device and apparatus therefor |
KR0156011B1 (en) * | 1991-08-12 | 1998-12-01 | 이노우에 아키라 | Plasma treating apparatus and method thereof |
US5234529A (en) * | 1991-10-10 | 1993-08-10 | Johnson Wayne L | Plasma generating apparatus employing capacitive shielding and process for using such apparatus |
US5223108A (en) | 1991-12-30 | 1993-06-29 | Materials Research Corporation | Extended lifetime collimator |
US5280154A (en) | 1992-01-30 | 1994-01-18 | International Business Machines Corporation | Radio frequency induction plasma processing system utilizing a uniform field coil |
WO1993018201A1 (en) | 1992-03-02 | 1993-09-16 | Varian Associates, Inc. | Plasma implantation process and equipment |
US5490910A (en) | 1992-03-09 | 1996-02-13 | Tulip Memory Systems, Inc. | Circularly symmetric sputtering apparatus with hollow-cathode plasma devices |
US5277751A (en) | 1992-06-18 | 1994-01-11 | Ogle John S | Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window |
US5252178A (en) * | 1992-06-24 | 1993-10-12 | Texas Instruments Incorporated | Multi-zone plasma processing method and apparatus |
US5404079A (en) * | 1992-08-13 | 1995-04-04 | Matsushita Electric Industrial Co., Ltd. | Plasma generating apparatus |
WO1994006263A1 (en) | 1992-09-01 | 1994-03-17 | The University Of North Carolina At Chapel Hill | High pressure magnetically assisted inductively coupled plasma |
JP3266163B2 (en) * | 1992-10-14 | 2002-03-18 | 東京応化工業株式会社 | Plasma processing equipment |
US5346578A (en) | 1992-11-04 | 1994-09-13 | Novellus Systems, Inc. | Induction plasma source |
DE69331291T2 (en) | 1992-11-13 | 2002-08-08 | Energy Conversion Devices Inc | Process for producing a barrier coating using plasma-assisted CVD |
JP2684942B2 (en) | 1992-11-30 | 1997-12-03 | 日本電気株式会社 | Chemical vapor deposition method, chemical vapor deposition apparatus, and method for manufacturing multilayer wiring |
US5289010A (en) | 1992-12-08 | 1994-02-22 | Wisconsin Alumni Research Foundation | Ion purification for plasma ion implantation |
US5374456A (en) | 1992-12-23 | 1994-12-20 | Hughes Aircraft Company | Surface potential control in plasma processing of materials |
US5308414A (en) * | 1992-12-23 | 1994-05-03 | International Business Machines Corporation | Method and apparatus for optical emission end point detection in plasma etching processes |
US6136140A (en) | 1993-01-12 | 2000-10-24 | Tokyo Electron Limited | Plasma processing apparatus |
KR100238627B1 (en) * | 1993-01-12 | 2000-01-15 | 히가시 데쓰로 | Plasma processing apparatus |
US5362353A (en) | 1993-02-26 | 1994-11-08 | Lsi Logic Corporation | Faraday cage for barrel-style plasma etchers |
TW249313B (en) | 1993-03-06 | 1995-06-11 | Tokyo Electron Co | |
US5401350A (en) | 1993-03-08 | 1995-03-28 | Lsi Logic Corporation | Coil configurations for improved uniformity in inductively coupled plasma systems |
US5487785A (en) * | 1993-03-26 | 1996-01-30 | Tokyo Electron Kabushiki Kaisha | Plasma treatment apparatus |
US5354381A (en) | 1993-05-07 | 1994-10-11 | Varian Associates, Inc. | Plasma immersion ion implantation (PI3) apparatus |
US5531834A (en) | 1993-07-13 | 1996-07-02 | Tokyo Electron Kabushiki Kaisha | Plasma film forming method and apparatus and plasma processing apparatus |
US5614055A (en) | 1993-08-27 | 1997-03-25 | Applied Materials, Inc. | High density plasma CVD and etching reactor |
US5498290A (en) | 1993-08-27 | 1996-03-12 | Hughes Aircraft Company | Confinement of secondary electrons in plasma ion processing |
JPH07106512A (en) | 1993-10-04 | 1995-04-21 | Sharp Corp | Simox processing method based on molecule ion implantation |
GB9321489D0 (en) * | 1993-10-19 | 1993-12-08 | Central Research Lab Ltd | Plasma processing |
KR100276736B1 (en) | 1993-10-20 | 2001-03-02 | 히가시 데쓰로 | Plasma processing equipment |
US5431799A (en) | 1993-10-29 | 1995-07-11 | Applied Materials, Inc. | Collimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiency |
US5413955A (en) | 1993-12-21 | 1995-05-09 | Delco Electronics Corporation | Method of bonding silicon wafers at temperatures below 500 degrees centigrade for sensor applications |
DE4403125A1 (en) * | 1994-02-02 | 1995-08-03 | Fraunhofer Ges Forschung | Plasma generating device |
JP3365067B2 (en) | 1994-02-10 | 2003-01-08 | ソニー株式会社 | Plasma apparatus and plasma processing method using the same |
US5411592A (en) * | 1994-06-06 | 1995-05-02 | Ovonic Battery Company, Inc. | Apparatus for deposition of thin-film, solid state batteries |
US5587038A (en) | 1994-06-16 | 1996-12-24 | Princeton University | Apparatus and process for producing high density axially extending plasmas |
US5661043A (en) | 1994-07-25 | 1997-08-26 | Rissman; Paul | Forming a buried insulator layer using plasma source ion implantation |
US5651868A (en) | 1994-10-26 | 1997-07-29 | International Business Machines Corporation | Method and apparatus for coating thin film data storage disks |
US5919382A (en) * | 1994-10-31 | 1999-07-06 | Applied Materials, Inc. | Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor |
US5504328A (en) * | 1994-12-09 | 1996-04-02 | Sematech, Inc. | Endpoint detection utilizing ultraviolet mass spectrometry |
JP3426382B2 (en) | 1995-01-24 | 2003-07-14 | アネルバ株式会社 | Plasma processing equipment |
DE69510032T2 (en) * | 1995-03-31 | 2000-01-27 | Ibm | Method and apparatus for monitoring dry etching of a dielectric film to a given thickness |
JP2666768B2 (en) * | 1995-04-27 | 1997-10-22 | 日本電気株式会社 | Dry etching method and apparatus |
US5674321A (en) | 1995-04-28 | 1997-10-07 | Applied Materials, Inc. | Method and apparatus for producing plasma uniformity in a magnetic field-enhanced plasma reactor |
US5985032A (en) * | 1995-05-17 | 1999-11-16 | Matsushita Electric Industrial Co., Ltd. | Semiconductor manufacturing apparatus |
US5711812A (en) | 1995-06-06 | 1998-01-27 | Varian Associates, Inc. | Apparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processes |
US5653811A (en) | 1995-07-19 | 1997-08-05 | Chan; Chung | System for the plasma treatment of large area substrates |
US5686796A (en) | 1995-12-20 | 1997-11-11 | International Business Machines Corporation | Ion implantation helicon plasma source with magnetic dipoles |
US5985102A (en) | 1996-01-29 | 1999-11-16 | Micron Technology, Inc. | Kit for electrically isolating collimator of PVD chamber, chamber so modified, and method of using |
DE69737311T2 (en) | 1996-02-09 | 2007-06-28 | ULVAC, Inc., Chigasaki | Device for generating a plasma with discharge along a magnetic-neutral line |
US5683548A (en) | 1996-02-22 | 1997-11-04 | Motorola, Inc. | Inductively coupled plasma reactor and process |
US5641969A (en) | 1996-03-28 | 1997-06-24 | Applied Materials, Inc. | Ion implantation apparatus |
US5710057A (en) | 1996-07-12 | 1998-01-20 | Kenney; Donald M. | SOI fabrication method |
US5654043A (en) | 1996-10-10 | 1997-08-05 | Eaton Corporation | Pulsed plate plasma implantation system and method |
US5911832A (en) | 1996-10-10 | 1999-06-15 | Eaton Corporation | Plasma immersion implantation with pulsed anode |
US5824602A (en) | 1996-10-21 | 1998-10-20 | The United States Of America As Represented By The United States Department Of Energy | Helicon wave excitation to produce energetic electrons for manufacturing semiconductors |
US6051073A (en) | 1998-02-11 | 2000-04-18 | Silicon Genesis Corporation | Perforated shield for plasma immersion ion implantation |
US6204607B1 (en) | 1998-05-28 | 2001-03-20 | Applied Komatsu Technology, Inc. | Plasma source with multiple magnetic flux sources each having a ferromagnetic core |
-
1995
- 1995-07-19 US US08/503,973 patent/US5653811A/en not_active Expired - Lifetime
-
1996
- 1996-07-02 WO PCT/US1996/011213 patent/WO1997004478A2/en not_active Application Discontinuation
- 1996-07-02 KR KR1019980700373A patent/KR19990029069A/en not_active Application Discontinuation
- 1996-07-02 DE DE69625068T patent/DE69625068D1/en not_active Expired - Lifetime
- 1996-07-02 CN CN96196235A patent/CN1192788A/en active Pending
- 1996-07-02 CA CA002227233A patent/CA2227233C/en not_active Expired - Fee Related
- 1996-07-02 JP JP50669797A patent/JP4128217B2/en not_active Expired - Lifetime
- 1996-07-02 EP EP96922642A patent/EP0842307B1/en not_active Expired - Lifetime
- 1996-07-02 AU AU63449/96A patent/AU718941B2/en not_active Ceased
-
1997
- 1997-06-18 US US08/878,005 patent/US6632324B2/en not_active Expired - Fee Related
-
1998
- 1998-04-24 US US09/065,953 patent/US6338313B1/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59193904A (en) * | 1983-04-18 | 1984-11-02 | Matsushita Electric Ind Co Ltd | Apparatus for forming thin film of polymer |
US4846928A (en) * | 1987-08-04 | 1989-07-11 | Texas Instruments, Incorporated | Process and apparatus for detecting aberrations in production process operations |
US4887005A (en) * | 1987-09-15 | 1989-12-12 | Rough J Kirkwood H | Multiple electrode plasma reactor power distribution system |
US5368710A (en) * | 1992-05-14 | 1994-11-29 | Lam Research Corporation | Method of treating an article with a plasma apparatus in which a uniform electric field is induced by a dielectric window |
US5273610A (en) * | 1992-06-23 | 1993-12-28 | Association Institutions For Material Sciences, Inc. | Apparatus and method for determining power in plasma processing |
Non-Patent Citations (1)
Title |
---|
See also references of EP0842307A4 * |
Also Published As
Publication number | Publication date |
---|---|
US5653811A (en) | 1997-08-05 |
AU6344996A (en) | 1997-02-18 |
CA2227233A1 (en) | 1997-02-06 |
JPH11510302A (en) | 1999-09-07 |
AU718941B2 (en) | 2000-05-04 |
EP0842307A4 (en) | 1999-12-01 |
CN1192788A (en) | 1998-09-09 |
EP0842307A2 (en) | 1998-05-20 |
KR19990029069A (en) | 1999-04-15 |
JP4128217B2 (en) | 2008-07-30 |
US6632324B2 (en) | 2003-10-14 |
US20020029850A1 (en) | 2002-03-14 |
US6338313B1 (en) | 2002-01-15 |
EP0842307B1 (en) | 2002-11-27 |
DE69625068D1 (en) | 2003-01-09 |
WO1997004478A2 (en) | 1997-02-06 |
CA2227233C (en) | 2001-10-30 |
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