WO1997007547A1 - High density trenched dmos transistor - Google Patents

High density trenched dmos transistor Download PDF

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Publication number
WO1997007547A1
WO1997007547A1 PCT/US1996/013289 US9613289W WO9707547A1 WO 1997007547 A1 WO1997007547 A1 WO 1997007547A1 US 9613289 W US9613289 W US 9613289W WO 9707547 A1 WO9707547 A1 WO 9707547A1
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WO
WIPO (PCT)
Prior art keywords
body region
region
conductivity type
principal surface
transistor
Prior art date
Application number
PCT/US1996/013289
Other languages
French (fr)
Inventor
Fwu-Iuan Hshieh
Mike F. Chang
Kuo-In Chen
Richard K. Williams
Mohamed Darwish
Original Assignee
Siliconix Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Siliconix Incorporated filed Critical Siliconix Incorporated
Priority to KR1019980701176A priority Critical patent/KR100306342B1/en
Priority to EP96928888A priority patent/EP0958611A1/en
Priority to JP09509501A priority patent/JP3109837B2/en
Publication of WO1997007547A1 publication Critical patent/WO1997007547A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs

Definitions

  • This invention relates to transistors, and more specifically to a high density trenched DMOS transistor.
  • DMOS diffused metal oxide semiconductor
  • Some DMOS transistors are trenched transistors; the gate electrode is a conductive material, typically polycrystalline silicon (polysilicon) , located in a trench in the transistor substrate, where the sidewalls and bottom of the trench are insulated with silicon dioxide.
  • the trenched structure increases transistor density, i.e. reduces the surface area consumed by the polysilicon gate of each transistor.
  • transistors are used in low voltage applications where a transistor includes a large number (thousands) of cells. Each cell is defined by a source region diffused into the substrate and by the gate electrode trenches.
  • the transistor cells each must be relatively large in surface area so that the lateral diffusion does not allow such coalescing. This increases the surface area consumed by each cell, or in other words increases the size of the transistor. As is well known, it is a primary goal of power MOSFET fabrication to minimize chip surface area. This lateral diffusion of the P+ deep body region prevents optimization of transistor density and hence wastes chip surface area.
  • cell density is increased in a DMOS transistor. In some embodiments this is accomplished by providing a very narrow (in lateral dimension) P+ deep body region with little or no lateral diffusion.
  • the P+ deep body region is implanted at high energy (i.e. 140 to 160 KeV) so as to drive the P+ deep body region down further into the substrate. This is approximately three times the conventional implantation energy for such a P+ deep body region.
  • This deep (high energy) implantation is performed after the P body diffusion and is usually carried out at high temperature. This reduces the amount of the P+ deep body diffusion, and achieves the final desired depth of the P+ deep body region with lower subsequent temperature cycles.
  • a double epitaxial layer is provided underlying the body region, with the P+ deep body P+ region not extending below the depth of the trench. Instead, the double epitaxial layer provides the desired current path away from the bottom of the trenches.
  • the P+ deep body implant is high energy but is shallower in depth than in the first embodiment due to less diffusion.
  • the destructive breakdown at the bottom of the trench characterized by the accompanying gate oxide rupture due to an excessive local electric field
  • Figure 1 shows a cross-section of a transistor in accordance with the first embodiment of the invention using a high energy P+ deep body implant.
  • Figure 2 shows a cross-section of a transistor in accordance with the second embodiment of the invention using a shallower P+ deep body implant with a double epitaxial layer.
  • Figure 3 shows a third embodiment of the invention with no deep P+ body implant and with a double epitaxial layer.
  • Figure 1 shows a cross-section of a transistor in the first embodiment of the invention. It is to be understood that this cross-section is drawn conventionally showing a portion of several cells of a typical transistor which may include thousands of such cells. However, a single cell transistor is also possible. Also, while the present disclosure is directed to a transistor having a negatively (N) doped substrate, a positively (P) doped body region and an N doped source region, it is to be understood that complementary devices are also possible wherein each doping type is reversed in terms of conductivity type. Also, the cross-sections shown here are not drawn to scale but are intended to be illustrative. While the various transistor doped regions shown here are conventionally delineated by lines, this is intended to be illustrative rather than representative.
  • FIG. 1 therefore shows a cross-section of several cells of the transistor which includes a drain region 10 N+ doped to a resistivity of 1 to 5 milliohm*cm and of conventional thickness. Conventionally a metallized drain electrode (not shown) is formed on the bottom surface of this drain region 10 as an electrical contact thereto.
  • N- doped epitaxial layer 12 (this need not be an epitaxial layer but is conventionally so formed) which has a resistivity of 0.7 to 1.0 milliohm»cm and hence a typical dopant level of 5xl0 15 to lxl0 16 /cm 3 .
  • the N- doped portion of the epitaxial layer in the transistor is called a drift region.
  • the epitaxial layer 12 has a total thickness typically of 8 to 12 ⁇ m.
  • a P doped body region 14 is formed in the upper portion of the epitaxial layer 12.
  • a typical dopant level of the body region 14 is 5xl0 15 /cm 3 .
  • a P+ deep body region 16 which has a total depth from the principal surface of the semiconductor body of about 2.5 ⁇ m.
  • a typical doping level of the P+ deep body region 16 is 2xl0 19 /cm 3 .
  • Penetrating from the principal surface of the semiconductor body into the drift region 12 is a set of trenches. Each trench is lined with a gate oxide layer 24 which is typically 0.07 ⁇ m thick and each trench is filled with a conductive doped polysilicon gate electrode 22.
  • a typical depth of each trench is 1 to 2 ⁇ m.
  • the P+ deep body region 16 extends 0.5 ⁇ m below the bottom of the trench.
  • P+ deep body region 16 approaches to within 2 ⁇ m of drain region 10.
  • P+ deep body region 16 is formed by a high energy implant, as described below.
  • N+ doped source regions 20 Formed in the upper portion of the epitaxial layer 12 are N+ doped source regions 20, having a typical depth of 0.5 ⁇ m. A typical doping level of the N+ source regions 20 is 6xl0 19 /cm 3 at the principal surface. Penetrating through the middle of each source region 20 is a trench in which is formed a conductive gate electrode 22. Also formed immediately over each P+ deep body region 16 is a P+ doped body contact region 18, to promote electrical contact between the body region 14 and the overlying source-body metallization layer 30 which also contacts the source regions 20. Insulating the upper portion of each conductive gate electrode 22 is a BPSG (boro-phosphosilicate glass) insulating layer 28.
  • BPSG boro-phosphosilicate glass
  • each transistor active portion is surrounded by a termination portion, typically including doped regions and sometimes a trench.
  • Conventional terminations are suitable in accordance with the present invention and the termination portion hence is not portrayed herein.
  • this structure using the high energy implantation to achieve the deep P+ body region 16 reduces further diffusion time to establish the final depth of region 16. That is, the high energy implantation step by itself establishes the ultimate depth of deep body region 16 and hence no additional diffusion is needed. This advantageously minimizes the lateral width (due to lateral diffusion) of each transistor cell, and hence maximizes cell surface area density.
  • a t". ical width of each trench is 0.8 to 1.0 ⁇ m.
  • a typical cell pitch is 6.0 ⁇ m. This is an improvement over the pitch of a prior art cell not having the high energy P+ deep body implant, which has a cell pitch of 7.5 ⁇ m.
  • FIG. 2 depicts a transistor in the second embodiment of the invention. Most of the elements are the same and have similar reference numbers as in Figure 1. However, this transistor also includes a second (upper) epitaxial layer (drift region) 34 which is N-doped to a concentration of 5xl0 15 /cm 3 and has a thickness of 1.0 ⁇ m. Also, each cell of this transistor includes a shallower P+ deep body region 36 which does not extend as deep as the bottom of the trenches but instead only extends approximately 0.5 ⁇ m from the principal surface of the semiconductor body. A typical doping concentration of P+ deep body region 36 is 2xl0 19 /cm 3 . A typical depth is 2.5 ⁇ m.
  • the non-destructive (avalanche) breakdown occurs between the P+ deep body region 36 and the underlying drain region 10.
  • This embodiment has one advantage over that of the first embodiment in that the parasitic JFET (junction field effect transistor) extending laterally from the P+ deep body region 36 can be significantly reduced.
  • the third embodiment shown in Figure 3 includes the double epitaxial layer (drift region) structure of Figure 2 but does not include a P+ deep body region. Thus this is relatively simpler to fabricate than the embodiment of Figure 2. It is believed however that the embodiment of Figure 2 is likely to perform better in typical applications than the embodiment of Figure 3, since the Figure 3 transistor may have some residual problem of oxide rupture, i.e. destructive breakdown at the bottom of the trenches, due to the higher elective field between a P+ deep body region and the drain region 10.
  • An epitaxial layer 12 is then grown thereon having a resistivity of 0.7 to 1 milliohm*cm and a thickness of 6 to 11 ⁇ m.
  • the second epitaxial layer 34 is more strongly doped N type and has a resistivity of 0.5 to 0.6 milliohm*cm.
  • the total thickness of the epitaxial layer(s) in each of the embodiments of Figures 1, 2, and 3 is typically 1 to 2 ⁇ m.
  • the principal surface of the semiconductor body including the epitaxial layer(s) then has a conventional active mask layer formed thereon and patterned.
  • This active mask may be oxide or other suitable material.
  • This active mask defines the active portion of the transistor and hence masks off the termination portion thereof. It is to be understood that each of the embodiments of Figures 1, 2, and 3 illustrates only the active portion, with the termination portion not being shown as being outside the drawing edges.
  • a trench mask layer is then formed and patterned. Using the trench mask as a pattern, the trenches are then etched anisotropically. The trenches are then subject to a sacrificial oxide step to smooth their sidewalls and bottoms. The gate oxide layer 24 is then grown to a thickness of 0.05 to 0.07 ⁇ m. A layer of polysilicon is then formed on the principal surface of the semiconductor body and filling all the trenches.
  • the polysilicon layer is then doped to achieve maximum conductivity with a N-type dopant.
  • a gate mask layer (poly mask) is formed over the entire surface of the polysilicon and patterned. This gate mask is then used to etch away the polysilicon except from the trenches, while also leaving gate contact fingers on the principal surface connecting the gate electrodes in the various trenches.
  • a blanket P type implant forms the P doped body region 14.
  • This implant uses a dosage of IO 13 to 10 I4 /cm 2 at an energy of 50 to 60 KeV, typically using boron as a dopant for an N-channel device.
  • a P+ region mask layer is formed and patterned, masking off all portions of the principal surface of the semiconductor body except where the P+ regions are to be formed. As shown, typically these P+ regions are located intermediate each adjacent pair of trenches.
  • the P+ implant is performed using boron as a dopant.
  • this implantation uses an energy of 140 to 160 KeV and a dosage of 5xl0 15 to lxl0 ,6 /cm 2 .
  • this uses a lower implant energy of 50 to 60 KeV and a dosage of 5xl0 15 to lxl0 16 /cm 2 .
  • the P+ dopant is boron.
  • Figure 1 and Figure 2 represents a high energy P+ implant
  • Figure 3 a low energy P+ implant
  • the P+ implant forms the P+ doped body contact region 20, and in the case of Figures 1 and 2 it also at the same time forms the deep body P+ regions respectively 16 and 36.
  • the P+ region mask is stripped and an N+ source region mask layer is formed and patterned to define the N+ source regions 20.
  • the N+ source implant is then performed at an energy level of 80 to 100 KeV and a dosage of 5xl0 15 to 8xl0 18 /cm 2 , the dopant being arsenic.
  • the N+ source mask is then stripped and a trench mask layer is formed and patterned to define the trenches.
  • a layer of boro-phosphosilicate glass is conventionally deposited and doped. This layer has a thickness of 1 to 1.5 ⁇ .
  • a BPSG mask layer is then formed and patterned over the BPSG layer and then the BPSG mask is used to etch the BPSG, defining BPSG regions 28 insulating the top side of each conductive gate electrode 22.
  • conventional steps complete the device, i.e. stripping the BPSG mask, depositing the source-body metal layer, and masking the metal layer to define source-body contacts 30.
  • a passivation layer is formed and a pad mask is formed and patterned and used to define the pad contacts through the passivation layer.
  • the formation of the metal layer 30 has a corresponding step to form the contact to drain 10 (not shown) on the backside of the substrate.

Abstract

The cell density of a trenched DMOS transistor is increased by overcoming the problem of lateral diffusion of deep P+ body regions. This problem is solved by forming the deep P+ body region (16) using a high energy implant into a single epitaxial layer (12). The cell density is improved to more than 12 million cells per square inch.

Description

HIGH DENSITY TRENCHED DMOS TRANSISTOR
BACKGROUND OF THE INVENTION Field of the Invention
This invention relates to transistors, and more specifically to a high density trenched DMOS transistor.
Description of the Prior Art
DMOS (diffused metal oxide semiconductor) transistors are well known. Typically, these transistors are used in integrated circuits or for power transistors. Some DMOS transistors are trenched transistors; the gate electrode is a conductive material, typically polycrystalline silicon (polysilicon) , located in a trench in the transistor substrate, where the sidewalls and bottom of the trench are insulated with silicon dioxide. The trenched structure increases transistor density, i.e. reduces the surface area consumed by the polysilicon gate of each transistor. Typically such transistors are used in low voltage applications where a transistor includes a large number (thousands) of cells. Each cell is defined by a source region diffused into the substrate and by the gate electrode trenches.
In typical DMOS transistors using a trenched gate electrode, in order to avoid destructive breakdown occurring at the bottom of the trench into the underlying drain region, such transistors are fabricated so that a P+ deep body region extends deeper than does the bottom of the trench into the substrate (drain region) . Thus rather than destructive breakdown occurring at the trench bottom, instead avalanche breakdown occurs from the lowest portion of this P+ deep body region into the underlying drain region. However due to device physics limitations, the cell density of such transistors is thereby restricted by lateral diffusion of this P+ deep body region. That is, in order to provide a P+ deep body region that extends deep enough into the substrate, the drive in step causes this P+ deep body region to diffuse laterally. If it diffuses too far laterally, it may coalesce with an adjacent P+ deep body region and degrade transistor performance.
Hence, in order to allow deep enough extension of the P+ deep body region into the substrate, the transistor cells each must be relatively large in surface area so that the lateral diffusion does not allow such coalescing. This increases the surface area consumed by each cell, or in other words increases the size of the transistor. As is well known, it is a primary goal of power MOSFET fabrication to minimize chip surface area. This lateral diffusion of the P+ deep body region prevents optimization of transistor density and hence wastes chip surface area.
SUMMARY
In accordance with the invention, cell density is increased in a DMOS transistor. In some embodiments this is accomplished by providing a very narrow (in lateral dimension) P+ deep body region with little or no lateral diffusion. In a first embodiment, the P+ deep body region is implanted at high energy (i.e. 140 to 160 KeV) so as to drive the P+ deep body region down further into the substrate. This is approximately three times the conventional implantation energy for such a P+ deep body region. This deep (high energy) implantation is performed after the P body diffusion and is usually carried out at high temperature. This reduces the amount of the P+ deep body diffusion, and achieves the final desired depth of the P+ deep body region with lower subsequent temperature cycles. In a second embodiment, in addition to the high energy P+ deep body implant, a double epitaxial layer is provided underlying the body region, with the P+ deep body P+ region not extending below the depth of the trench. Instead, the double epitaxial layer provides the desired current path away from the bottom of the trenches. In the second embodiment, the P+ deep body implant is high energy but is shallower in depth than in the first embodiment due to less diffusion. In a third embodiment, there is no P+ deep body implantation at all and instead only the double epitaxial layer is used underneath the body region. It has been found that in accordance with the invention, cell density may be improved to e.g. greater than 12 million cells per square inch. Advantageously in accordance with each of the three embodiments, the destructive breakdown at the bottom of the trench (characterized by the accompanying gate oxide rupture due to an excessive local electric field) is avoided.
BRIEF DESCRIPTION OF THE DRAWINGS
Figure 1 shows a cross-section of a transistor in accordance with the first embodiment of the invention using a high energy P+ deep body implant. Figure 2 shows a cross-section of a transistor in accordance with the second embodiment of the invention using a shallower P+ deep body implant with a double epitaxial layer.
Figure 3 shows a third embodiment of the invention with no deep P+ body implant and with a double epitaxial layer.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
Figure 1 shows a cross-section of a transistor in the first embodiment of the invention. It is to be understood that this cross-section is drawn conventionally showing a portion of several cells of a typical transistor which may include thousands of such cells. However, a single cell transistor is also possible. Also, while the present disclosure is directed to a transistor having a negatively (N) doped substrate, a positively (P) doped body region and an N doped source region, it is to be understood that complementary devices are also possible wherein each doping type is reversed in terms of conductivity type. Also, the cross-sections shown here are not drawn to scale but are intended to be illustrative. While the various transistor doped regions shown here are conventionally delineated by lines, this is intended to be illustrative rather than representative. In the figures, identical reference numbers used in various figures are intended to denote similar structures for convenience of understanding. Also, the various parameters disclosed herein for thicknesses, depths, widths, doping concentrations and dosages and implantation energies are illustrative rather than limiting. Also, various materials may be used for the positive and negative type dopants. While the substances conventionally used for these dopant types may be used, this is not limiting. Figure 1 therefore shows a cross-section of several cells of the transistor which includes a drain region 10 N+ doped to a resistivity of 1 to 5 milliohm*cm and of conventional thickness. Conventionally a metallized drain electrode (not shown) is formed on the bottom surface of this drain region 10 as an electrical contact thereto. Grown on the drain region 10 (substrate) is an N- doped epitaxial layer 12 (this need not be an epitaxial layer but is conventionally so formed) which has a resistivity of 0.7 to 1.0 milliohm»cm and hence a typical dopant level of 5xl015 to lxl016/cm3. The N- doped portion of the epitaxial layer in the transistor is called a drift region. The epitaxial layer 12 has a total thickness typically of 8 to 12 μm.
A P doped body region 14 is formed in the upper portion of the epitaxial layer 12. A typical dopant level of the body region 14 is 5xl015/cm3. Included as a part of the body region 14 is a P+ deep body region 16 which has a total depth from the principal surface of the semiconductor body of about 2.5 μm. A typical doping level of the P+ deep body region 16 is 2xl019/cm3. Penetrating from the principal surface of the semiconductor body into the drift region 12 is a set of trenches. Each trench is lined with a gate oxide layer 24 which is typically 0.07 μm thick and each trench is filled with a conductive doped polysilicon gate electrode 22. A typical depth of each trench is 1 to 2 μm. Typically therefore the P+ deep body region extends 0.5 μm below the bottom of the trench. Thus the P+ deep body region 16 approaches to within 2 μm of drain region 10. P+ deep body region 16 is formed by a high energy implant, as described below.
Formed in the upper portion of the epitaxial layer 12 are N+ doped source regions 20, having a typical depth of 0.5 μm. A typical doping level of the N+ source regions 20 is 6xl019/cm3 at the principal surface. Penetrating through the middle of each source region 20 is a trench in which is formed a conductive gate electrode 22. Also formed immediately over each P+ deep body region 16 is a P+ doped body contact region 18, to promote electrical contact between the body region 14 and the overlying source-body metallization layer 30 which also contacts the source regions 20. Insulating the upper portion of each conductive gate electrode 22 is a BPSG (boro-phosphosilicate glass) insulating layer 28.
It is to be understood that the depiction herein is of the active portion of the transistor. Each transistor active portion is surrounded by a termination portion, typically including doped regions and sometimes a trench. Conventional terminations are suitable in accordance with the present invention and the termination portion hence is not portrayed herein.
Advantageously, this structure using the high energy implantation to achieve the deep P+ body region 16 reduces further diffusion time to establish the final depth of region 16. That is, the high energy implantation step by itself establishes the ultimate depth of deep body region 16 and hence no additional diffusion is needed. This advantageously minimizes the lateral width (due to lateral diffusion) of each transistor cell, and hence maximizes cell surface area density.
A t". ical width of each trench is 0.8 to 1.0 μm. A typical cell pitch is 6.0 μm. This is an improvement over the pitch of a prior art cell not having the high energy P+ deep body implant, which has a cell pitch of 7.5 μm.
Figure 2 depicts a transistor in the second embodiment of the invention. Most of the elements are the same and have similar reference numbers as in Figure 1. However, this transistor also includes a second (upper) epitaxial layer (drift region) 34 which is N-doped to a concentration of 5xl015/cm3 and has a thickness of 1.0 μm. Also, each cell of this transistor includes a shallower P+ deep body region 36 which does not extend as deep as the bottom of the trenches but instead only extends approximately 0.5 μm from the principal surface of the semiconductor body. A typical doping concentration of P+ deep body region 36 is 2xl019/cm3. A typical depth is 2.5 μm. Again, in this case the non-destructive (avalanche) breakdown occurs between the P+ deep body region 36 and the underlying drain region 10. This embodiment has one advantage over that of the first embodiment in that the parasitic JFET (junction field effect transistor) extending laterally from the P+ deep body region 36 can be significantly reduced.
The third embodiment shown in Figure 3 includes the double epitaxial layer (drift region) structure of Figure 2 but does not include a P+ deep body region. Thus this is relatively simpler to fabricate than the embodiment of Figure 2. It is believed however that the embodiment of Figure 2 is likely to perform better in typical applications than the embodiment of Figure 3, since the Figure 3 transistor may have some residual problem of oxide rupture, i.e. destructive breakdown at the bottom of the trenches, due to the higher elective field between a P+ deep body region and the drain region 10.
For the Figure 3 embodiment, due to absence of any P+ deep body region, only the principal surface will deplete in the body region 14. The intention is that there be avalanche breakdown where the P+ body contact 20 approaches the underlying drift region 34. Otherwise the dimensions and parameters of the Figure 3 transistor are similar to those of Figure 2. An exemplary process flow for fabricating the embodiments of Figures 1, 2, and 3 is described hereinafter. (These steps are not illustrated because each is conventional.) It is to be understood that this process flow is not the only way to fabricate the structures of Figures 1, 2, and 3, but is illustrative. Also, the various parameters given herein may be varied and still result in a structure and method in accordance with the present invention. The following process flow applies to all embodiments, with variations as described hereinafter.
One begins with an N+ doped substrate 10 conventionally fabricated and having a resistivity of 1 to 5 milliohm»cm. An epitaxial layer 12 is then grown thereon having a resistivity of 0.7 to 1 milliohm*cm and a thickness of 6 to 11 μm. For the embodiments of Figures 2 and 3, one then grows a second epitaxial layer 34 on top of the first epitaxial layer 12. The second epitaxial layer 34 is more strongly doped N type and has a resistivity of 0.5 to 0.6 milliohm*cm. The total thickness of the epitaxial layer(s) in each of the embodiments of Figures 1, 2, and 3 is typically 1 to 2 μm.
The principal surface of the semiconductor body including the epitaxial layer(s) then has a conventional active mask layer formed thereon and patterned. This active mask may be oxide or other suitable material. This active mask defines the active portion of the transistor and hence masks off the termination portion thereof. It is to be understood that each of the embodiments of Figures 1, 2, and 3 illustrates only the active portion, with the termination portion not being shown as being outside the drawing edges.
A trench mask layer is then formed and patterned. Using the trench mask as a pattern, the trenches are then etched anisotropically. The trenches are then subject to a sacrificial oxide step to smooth their sidewalls and bottoms. The gate oxide layer 24 is then grown to a thickness of 0.05 to 0.07 μm. A layer of polysilicon is then formed on the principal surface of the semiconductor body and filling all the trenches.
The polysilicon layer is then doped to achieve maximum conductivity with a N-type dopant.
Then a gate mask layer (poly mask) is formed over the entire surface of the polysilicon and patterned. This gate mask is then used to etch away the polysilicon except from the trenches, while also leaving gate contact fingers on the principal surface connecting the gate electrodes in the various trenches.
Then a blanket P type implant forms the P doped body region 14. This implant uses a dosage of IO13 to 10I4/cm2 at an energy of 50 to 60 KeV, typically using boron as a dopant for an N-channel device.
Next, a P+ region mask layer is formed and patterned, masking off all portions of the principal surface of the semiconductor body except where the P+ regions are to be formed. As shown, typically these P+ regions are located intermediate each adjacent pair of trenches. After patterning of this mask layer, the P+ implant is performed using boron as a dopant. In the embodiments of Figures 1 and 2 this implantation uses an energy of 140 to 160 KeV and a dosage of 5xl015 to lxl0,6/cm2. For the embodiment of Figure 3, this uses a lower implant energy of 50 to 60 KeV and a dosage of 5xl015 to lxl016/cm2. The P+ dopant is boron.
Thus Figure 1 and Figure 2 represents a high energy P+ implant, and Figure 3 a low energy P+ implant. In each case the P+ implant forms the P+ doped body contact region 20, and in the case of Figures 1 and 2 it also at the same time forms the deep body P+ regions respectively 16 and 36. Then the P+ region mask is stripped and an N+ source region mask layer is formed and patterned to define the N+ source regions 20. The N+ source implant is then performed at an energy level of 80 to 100 KeV and a dosage of 5xl015 to 8xl018/cm2, the dopant being arsenic.
The N+ source mask is then stripped and a trench mask layer is formed and patterned to define the trenches.
Next, a layer of boro-phosphosilicate glass (BPSG) is conventionally deposited and doped. This layer has a thickness of 1 to 1.5 μ . A BPSG mask layer is then formed and patterned over the BPSG layer and then the BPSG mask is used to etch the BPSG, defining BPSG regions 28 insulating the top side of each conductive gate electrode 22. Then conventional steps complete the device, i.e. stripping the BPSG mask, depositing the source-body metal layer, and masking the metal layer to define source-body contacts 30. Then a passivation layer is formed and a pad mask is formed and patterned and used to define the pad contacts through the passivation layer.
It is to be understood that the formation of the metal layer 30 has a corresponding step to form the contact to drain 10 (not shown) on the backside of the substrate.
Thus essentially a single process flow with variations in terms of (1) the P+ high/low energy implantation energies and (2) formation of a single or double epitaxial layer, is used to form each of the embodiments of Figures 1, 2, and 3.
This disclosure is intended to be illustrative and not limiting; further variations and modifications will be apparent to one skilled in the art in the light of this disclosure and are intended to fall within the scope of the appended claims.

Claims

CLAIMS:We claim:
1. A field effect transistor comprising a plurality of cells, each cell including: a substrate of a first conductivity type and having a principal surface; a drift region overlying the substrate and of the first conductivity type to a lesser concentration than the substrate; a body region of a second conductivity overlying the drift region into a depth thereof; a conductive gate electrode extending from a principal surface of the substrate at the body region into the drift region; and a source region of the first conductivity type formed adjacent the conductive gate electrode at the principal surface of the substrate in the body region; wherein a portion of the body region which is more highly doped than a remaining portion thereof extends deeper into the drift region than does the conductive gate electrode; and wherein there are at least 12 million cells/square inch of surface area at the principal surface.
2. The transistor of Claim 1, further comprising a body contact region formed in the body region at the principal surface and being of the second conductivity type and having a doping concentration greater than an adjacent part of the body region.
3. The transistor of Claim 1, wherein the portion of the body region which is more highly doped has a concentration of 2xl019/cm3 and extends at least 0.5 μm deeper than the conductive gate electrode into the drift region.
4. A method of making a field effect transistor, comprising the steps of: providing a substrate of a first conductivity type and having a principal surface; growing an epitaxial layer of the first conductivity type on the substrate; etching a trench extending into the epitaxial layer from the principal surface; filling the trench with conductive material. implanting a body region of a second conductivity type and extending into the epitaxial layer from a principal surface of the epitaxial layer; masking portions of the principal surface; and implanting, at an energy higher than that of the implantation of the body region, a deep body region of the second conductivity type and extending into the epitaxial layer deeper than the body region, the deep body region being defined by the masked portions of the principal surface.
5. The method of Claim 4, wherein the higher energy implanting step uses an energy of at least 100 KeV, and the deep body region extends at least 1.5μm from the principal surface.
6. The method of Claim 4, wherein the field effect transistor is one cell of a plurality of such cells formed simultaneously, and there are at least 12 million such cells formed per square inch of the principal surface.
A field effect transistor comprising: a substrate of a first conductivity type; a first drift region of the first conductivity type doped at a lower concentration than the substrate and formed on the substrate; a second drift region of the first conductivity type doped at a concentration intermediate that of the substrate and the first drift region, and formed on the first drift region; a body region of a second conductivity type and being formed on the second drift region; a conductive gate electrode extending from a principal surface of the body region into the first drift region; and a source region of the first conductivity type adjacent the conductive gate electrode at the principal surface of the body region.
8. The transistor of Claim 7, wherein a portion of the body region which is more highly doped than a remaining portion thereof extends deeper into the second drift region than does a remaining portion of the body region.
9. The transistor of Claim 7, further comprising a body contact region of the second conductivity type formed in the body region at the principal surface and being of higher doping concentration than an adjacent part of the body region.
10. The transistor of Claim 7, wherein a surface area of the transistor is less than (1/12 million) square inch.
11. The transistor of Claim 7, wherein a maximum thickness of the second drift region is 7 μm.
12. The transistor of Claim 8, wherein the more highly doped portion of the body region extends to within 1.5 μm of the first drift region.
13. The transistor of Claim 8, wherein the more highly doped portion of the body region has a doping concentration of at least 1019/cm3.
14. A method of making a field effect transistor, comprising the steps of: providing a substrate of a first conductivity type; growing a firεt epitaxial layer of the first conductivity type on the substrate; growing a second epitaxial layer of the first conductivity type on the first epitaxial layer; forming a body region of a second conductivity type in the second epitaxial layer and extending to a principal surface of the second epitaxial layer; forming a conductive gate electrode extending from the principal surface into the first epitaxial layer; and forming a source region of the first conductivity type adjacent the conductive gate electrode and extending into the body region from the principal surface.
15. The method of Claim 14, further comprising forming a deep body region of the second conductivity type and of a higher doping concentration than the body region, and extending deeper into the first epitaxial layer than does the body region.
16. The method of Claim 14, further comprising forming a body contact region of the second conductivity type in the body region at the principal surface and being of higher doping concentration than an adjacent part of the body region.
PCT/US1996/013289 1995-08-21 1996-08-21 High density trenched dmos transistor WO1997007547A1 (en)

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US6221721B1 (en) 1996-02-12 2001-04-24 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing an insulated trench gate semiconductor device
US6040599A (en) * 1996-03-12 2000-03-21 Mitsubishi Denki Kabushiki Kaisha Insulated trench semiconductor device with particular layer structure
EP0795911A3 (en) * 1996-03-12 1998-10-28 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and manufacturing method thereof
US7696571B2 (en) 1997-11-14 2010-04-13 Fairchild Semiconductor Corporation Method of manufacturing a trench transistor having a heavy body region
US6828195B2 (en) 1997-11-14 2004-12-07 Fairchild Semiconductor Corporation Method of manufacturing a trench transistor having a heavy body region
US8044463B2 (en) 1997-11-14 2011-10-25 Fairchild Semiconductor Corporation Method of manufacturing a trench transistor having a heavy body region
US8476133B2 (en) 1997-11-14 2013-07-02 Fairchild Semiconductor Corporation Method of manufacture and structure for a trench transistor having a heavy body region
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US6552391B2 (en) 2001-01-22 2003-04-22 Fairchild Semiconductor Corporation Low voltage dual-well trench MOS device
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EP0958611A4 (en) 1999-11-24
US5689128A (en) 1997-11-18
KR100306342B1 (en) 2001-11-15
JP3109837B2 (en) 2000-11-20
JPH11501459A (en) 1999-02-02
KR19990037697A (en) 1999-05-25
EP0958611A1 (en) 1999-11-24

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