WO1997012401A1 - A silicide agglomeration fuse device - Google Patents
A silicide agglomeration fuse device Download PDFInfo
- Publication number
- WO1997012401A1 WO1997012401A1 PCT/US1996/015717 US9615717W WO9712401A1 WO 1997012401 A1 WO1997012401 A1 WO 1997012401A1 US 9615717 W US9615717 W US 9615717W WO 9712401 A1 WO9712401 A1 WO 9712401A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- fuse
- set forth
- silicide layer
- fusible link
- resistance
- Prior art date
Links
- 229910021332 silicide Inorganic materials 0.000 title claims abstract description 60
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 238000005054 agglomeration Methods 0.000 title description 8
- 230000002776 aggregation Effects 0.000 title description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 47
- 229920005591 polysilicon Polymers 0.000 claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000004044 response Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 23
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 235000010678 Paulownia tomentosa Nutrition 0.000 claims 1
- 240000002834 Paulownia tomentosa Species 0.000 claims 1
- 238000012360 testing method Methods 0.000 description 25
- 238000012545 processing Methods 0.000 description 23
- 230000008569 process Effects 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000002950 deficient Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000012795 verification Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- OWZREIFADZCYQD-NSHGMRRFSA-N deltamethrin Chemical compound CC1(C)[C@@H](C=C(Br)Br)[C@H]1C(=O)O[C@H](C#N)C1=CC=CC(OC=2C=CC=CC=2)=C1 OWZREIFADZCYQD-NSHGMRRFSA-N 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 229940036310 program Drugs 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9513759A JPH11512879A (en) | 1995-09-29 | 1996-09-30 | Silicide aggregation fuse device |
BR9610726A BR9610726A (en) | 1995-09-29 | 1996-09-30 | Silicon agglomeration fuse device |
IL12375296A IL123752A (en) | 1995-09-29 | 1996-09-30 | Silicide agglomeration fuse device |
EP96933979A EP0857357A4 (en) | 1995-09-29 | 1996-09-30 | A silicide agglomeration fuse device |
KR1019980702310A KR100307779B1 (en) | 1995-09-29 | 1996-09-30 | A silicide agglomeration fuse device |
AU72508/96A AU7250896A (en) | 1995-09-29 | 1996-09-30 | A silicide agglomeration fuse device |
NO981399A NO981399L (en) | 1995-09-29 | 1998-03-27 | Melting device for agglomeration of a silicide |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/537,283 US5708291A (en) | 1995-09-29 | 1995-09-29 | Silicide agglomeration fuse device |
US08/537,283 | 1995-09-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1997012401A1 true WO1997012401A1 (en) | 1997-04-03 |
Family
ID=24142006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1996/015717 WO1997012401A1 (en) | 1995-09-29 | 1996-09-30 | A silicide agglomeration fuse device |
Country Status (14)
Country | Link |
---|---|
US (3) | US5708291A (en) |
EP (1) | EP0857357A4 (en) |
JP (1) | JPH11512879A (en) |
KR (1) | KR100307779B1 (en) |
CN (1) | CN1202277A (en) |
AU (1) | AU7250896A (en) |
BR (1) | BR9610726A (en) |
CA (1) | CA2233317A1 (en) |
HU (1) | HUP9802695A3 (en) |
IL (1) | IL123752A (en) |
MX (1) | MX9802299A (en) |
NO (1) | NO981399L (en) |
PL (1) | PL325837A1 (en) |
WO (1) | WO1997012401A1 (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2320804A (en) * | 1996-12-27 | 1998-07-01 | Vlsi Technology Inc | Bi-layer programmable resistor |
EP0863546A1 (en) * | 1997-03-07 | 1998-09-09 | STMicroelectronics S.A. | Pseudo-fuse and its use in a circuit for setting a bistable flip-flop |
US7203117B2 (en) | 2004-10-18 | 2007-04-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor integrated circuit |
US7254079B2 (en) | 2005-01-14 | 2007-08-07 | Matsushita Electric Industrial Co., Ltd. | Electrical fuse circuit |
US7291902B2 (en) * | 2004-12-15 | 2007-11-06 | Infineon Technologies Ag | Chip component and method for producing a chip component |
US7622982B2 (en) | 2006-08-09 | 2009-11-24 | Panasonic Corporation | Electrical fuse device |
US7696779B2 (en) | 2005-10-14 | 2010-04-13 | Panasonic Corporation | System LSI |
US7745905B2 (en) | 2006-03-07 | 2010-06-29 | Renesas Technology Corp. | Semiconductor device and a method of increasing a resistance value of an electric fuse |
US8105886B2 (en) | 2004-02-27 | 2012-01-31 | Kabushiki Kaisha Toshiba | Semiconductor electrically programmable fuse element with amorphous silicon layer after programming and method of programming the same |
US8279700B2 (en) | 2009-05-14 | 2012-10-02 | Kabushiki Kaisha Toshiba | Semiconductor electrically programmable fuse (eFuse) having a polysilicon layer not doped with an impurity ion and a programming method thereof |
Families Citing this family (123)
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US5581111A (en) | 1993-07-07 | 1996-12-03 | Actel Corporation | Dielectric-polysilicon-dielectric antifuse for field programmable logic applications |
CA2196557A1 (en) | 1995-06-02 | 1996-12-05 | Frank W. Hawley | Raised tungsten plug antifuse and fabrication process |
US5986322A (en) * | 1995-06-06 | 1999-11-16 | Mccollum; John L. | Reduced leakage antifuse structure |
FR2739491B1 (en) * | 1995-09-28 | 1997-12-12 | Sgs Thomson Microelectronics | METHOD FOR MODIFYING THE DOPING OF A SILICON LAYER |
US5708291A (en) | 1995-09-29 | 1998-01-13 | Intel Corporation | Silicide agglomeration fuse device |
FR2778497B1 (en) * | 1998-05-07 | 2003-06-13 | Sgs Thomson Microelectronics | INTEGRATED CIRCUIT FUSE, CURRENT FOCUSING |
FR2778791B1 (en) * | 1998-05-14 | 2002-10-25 | Sgs Thomson Microelectronics | INTEGRATED CIRCUIT FUSE WITH LOCALIZED BLOCKING POINT |
US5959360A (en) * | 1998-05-22 | 1999-09-28 | United Microelectronics Corp. | Interconnect structure employing equivalent resistance paths to improve electromigration resistance |
US5963831A (en) * | 1998-05-22 | 1999-10-05 | United Microelectronics Corp. | Method of making an interconnect structure employing equivalent resistance paths to improve electromigration resistance |
US5973977A (en) * | 1998-07-06 | 1999-10-26 | Pmc-Sierra Ltd. | Poly fuses in CMOS integrated circuits |
US20050269666A1 (en) * | 2004-06-07 | 2005-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrical fuses as programmable data storage |
US6031275A (en) * | 1998-12-15 | 2000-02-29 | National Semiconductor Corporation | Antifuse with a silicide layer overlying a diffusion region |
US20070190751A1 (en) * | 1999-03-29 | 2007-08-16 | Marr Kenneth W | Semiconductor fuses and methods for fabricating and programming the same |
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US5976943A (en) * | 1996-12-27 | 1999-11-02 | Vlsi Technology, Inc. | Method for bi-layer programmable resistor |
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EP0863546A1 (en) * | 1997-03-07 | 1998-09-09 | STMicroelectronics S.A. | Pseudo-fuse and its use in a circuit for setting a bistable flip-flop |
FR2760563A1 (en) * | 1997-03-07 | 1998-09-11 | Sgs Thomson Microelectronics | PSEUDOFUSIBLE AND APPLICATION TO A CIRCUIT FOR ESTABLISHING A LOCKING WEIGHER AT POWER ON |
US8105886B2 (en) | 2004-02-27 | 2012-01-31 | Kabushiki Kaisha Toshiba | Semiconductor electrically programmable fuse element with amorphous silicon layer after programming and method of programming the same |
US7203117B2 (en) | 2004-10-18 | 2007-04-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor integrated circuit |
CN100411174C (en) * | 2004-10-18 | 2008-08-13 | 松下电器产业株式会社 | Semiconductor integrated circuit |
US7291902B2 (en) * | 2004-12-15 | 2007-11-06 | Infineon Technologies Ag | Chip component and method for producing a chip component |
US7254079B2 (en) | 2005-01-14 | 2007-08-07 | Matsushita Electric Industrial Co., Ltd. | Electrical fuse circuit |
US7696779B2 (en) | 2005-10-14 | 2010-04-13 | Panasonic Corporation | System LSI |
US7884642B2 (en) | 2005-10-14 | 2011-02-08 | Panasonic Corporation | System LSI |
US7745905B2 (en) | 2006-03-07 | 2010-06-29 | Renesas Technology Corp. | Semiconductor device and a method of increasing a resistance value of an electric fuse |
US9508641B2 (en) | 2006-03-07 | 2016-11-29 | Renesas Electronics Corporation | Semiconductor device and a method increasing a resistance value of an electric fuse |
US9893013B2 (en) | 2006-03-07 | 2018-02-13 | Renesas Electronics Corporation | Semiconductor device and a method of increasing a resistance value of an electric fuse |
US10923419B2 (en) | 2006-03-07 | 2021-02-16 | Renesas Electronics Corporation | Semiconductor device and a method of increasing a resistance value of an electric fuse |
US7622982B2 (en) | 2006-08-09 | 2009-11-24 | Panasonic Corporation | Electrical fuse device |
US8279700B2 (en) | 2009-05-14 | 2012-10-02 | Kabushiki Kaisha Toshiba | Semiconductor electrically programmable fuse (eFuse) having a polysilicon layer not doped with an impurity ion and a programming method thereof |
Also Published As
Publication number | Publication date |
---|---|
US6258700B1 (en) | 2001-07-10 |
HUP9802695A2 (en) | 1999-03-29 |
EP0857357A1 (en) | 1998-08-12 |
NO981399L (en) | 1998-05-27 |
AU7250896A (en) | 1997-04-17 |
PL325837A1 (en) | 1998-08-03 |
KR19990063840A (en) | 1999-07-26 |
NO981399D0 (en) | 1998-03-27 |
JPH11512879A (en) | 1999-11-02 |
IL123752A0 (en) | 1998-10-30 |
HUP9802695A3 (en) | 2000-01-28 |
US5708291A (en) | 1998-01-13 |
CN1202277A (en) | 1998-12-16 |
KR100307779B1 (en) | 2002-03-08 |
MX9802299A (en) | 1998-08-30 |
US5969404A (en) | 1999-10-19 |
IL123752A (en) | 2001-04-30 |
CA2233317A1 (en) | 1997-04-03 |
BR9610726A (en) | 1999-07-13 |
EP0857357A4 (en) | 1999-03-17 |
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