WO1997017730A1 - Process for reducing defects in oxide layers on silicon carbide - Google Patents
Process for reducing defects in oxide layers on silicon carbide Download PDFInfo
- Publication number
- WO1997017730A1 WO1997017730A1 PCT/US1996/017344 US9617344W WO9717730A1 WO 1997017730 A1 WO1997017730 A1 WO 1997017730A1 US 9617344 W US9617344 W US 9617344W WO 9717730 A1 WO9717730 A1 WO 9717730A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon carbide
- oxide
- layer
- oxide layer
- exposing
- Prior art date
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 106
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 103
- 238000000034 method Methods 0.000 title claims abstract description 42
- 230000008569 process Effects 0.000 title description 5
- 230000007547 defect Effects 0.000 title description 3
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 75
- 230000003647 oxidation Effects 0.000 claims abstract description 45
- 230000001590 oxidative effect Effects 0.000 claims abstract description 37
- 239000007789 gas Substances 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000012159 carrier gas Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000012300 argon atmosphere Substances 0.000 claims 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000010405 reoxidation reaction Methods 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 238000009279 wet oxidation reaction Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 241000894007 species Species 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE69615390T DE69615390T2 (en) | 1995-11-08 | 1996-10-28 | METHOD FOR REDUCING DEFECTS IN OXIDE LAYERS ON SILICONE CARBIDES |
AU76659/96A AU7665996A (en) | 1995-11-08 | 1996-10-28 | Process for reducing defects in oxide layers on silicon carbide |
KR10-1998-0702624A KR100475040B1 (en) | 1995-11-08 | 1996-10-28 | Reduction of oxide defects on silicon carbide |
EP96939506A EP0860026B1 (en) | 1995-11-08 | 1996-10-28 | Process for reducing defects in oxide layers on silicon carbide |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/554,319 US5972801A (en) | 1995-11-08 | 1995-11-08 | Process for reducing defects in oxide layers on silicon carbide |
US08/554,319 | 1995-11-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1997017730A1 true WO1997017730A1 (en) | 1997-05-15 |
Family
ID=24212909
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1996/017344 WO1997017730A1 (en) | 1995-11-08 | 1996-10-28 | Process for reducing defects in oxide layers on silicon carbide |
Country Status (7)
Country | Link |
---|---|
US (1) | US5972801A (en) |
EP (1) | EP0860026B1 (en) |
JP (1) | JP3251017B2 (en) |
KR (1) | KR100475040B1 (en) |
AU (1) | AU7665996A (en) |
DE (1) | DE69615390T2 (en) |
WO (1) | WO1997017730A1 (en) |
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US6610366B2 (en) | 2000-10-03 | 2003-08-26 | Cree, Inc. | Method of N2O annealing an oxide layer on a silicon carbide layer |
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US6767843B2 (en) | 2000-10-03 | 2004-07-27 | Cree, Inc. | Method of N2O growth of an oxide layer on a silicon carbide layer |
US6835956B1 (en) | 1999-02-09 | 2004-12-28 | Nichia Corporation | Nitride semiconductor device and manufacturing method thereof |
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US6956238B2 (en) | 2000-10-03 | 2005-10-18 | Cree, Inc. | Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel |
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US7067176B2 (en) | 2000-10-03 | 2006-06-27 | Cree, Inc. | Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment |
US7074643B2 (en) | 2003-04-24 | 2006-07-11 | Cree, Inc. | Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same |
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Also Published As
Publication number | Publication date |
---|---|
EP0860026B1 (en) | 2001-09-19 |
EP0860026A1 (en) | 1998-08-26 |
KR19990064143A (en) | 1999-07-26 |
JPH11505073A (en) | 1999-05-11 |
KR100475040B1 (en) | 2005-06-20 |
JP3251017B2 (en) | 2002-01-28 |
DE69615390D1 (en) | 2001-10-25 |
AU7665996A (en) | 1997-05-29 |
US5972801A (en) | 1999-10-26 |
DE69615390T2 (en) | 2002-06-13 |
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