WO1997022382A1 - Optically controlled high-voltage switch for an implantable defibrillator - Google Patents
Optically controlled high-voltage switch for an implantable defibrillator Download PDFInfo
- Publication number
- WO1997022382A1 WO1997022382A1 PCT/US1996/020355 US9620355W WO9722382A1 WO 1997022382 A1 WO1997022382 A1 WO 1997022382A1 US 9620355 W US9620355 W US 9620355W WO 9722382 A1 WO9722382 A1 WO 9722382A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- switch
- voltage
- terminal
- light emitting
- emitting device
- Prior art date
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Classifications
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N1/00—Electrotherapy; Circuits therefor
- A61N1/18—Applying electric currents by contact electrodes
- A61N1/32—Applying electric currents by contact electrodes alternating or intermittent currents
- A61N1/38—Applying electric currents by contact electrodes alternating or intermittent currents for producing shock effects
- A61N1/39—Heart defibrillators
- A61N1/3925—Monitoring; Protecting
- A61N1/3931—Protecting, e.g. back-up systems
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N1/00—Electrotherapy; Circuits therefor
- A61N1/18—Applying electric currents by contact electrodes
- A61N1/32—Applying electric currents by contact electrodes alternating or intermittent currents
- A61N1/38—Applying electric currents by contact electrodes alternating or intermittent currents for producing shock effects
- A61N1/39—Heart defibrillators
- A61N1/3906—Heart defibrillators characterised by the form of the shockwave
- A61N1/3912—Output circuitry therefor, e.g. switches
Definitions
- the present invention relates generally to implantable cardiac stimulators, and more particularly to circuitry in such devices for switching high voltages between a storage capacitor and a defibrillation electrode Background Art
- Implantable defib ⁇ llators are designed to constantly sense mtra-cardiac electrogram signals and, upon sensing signal patterns indicative of fibrillation, automatically deliver defibrillation therapy Such therapy typically includes the application of high voltage, high energy shocks to cardiac tissue via implanted defibrillation leads and electrodes
- Implantable defib ⁇ llators being battery powered devices, cannot provide electrical shocks directly from the power source at the high energy levels that are required It is therefore conventional to step up the voltage from the battery by applying a switched DC voltage to the primary winding of a transformer, rectifying the resulting high voltage AC output from the secondary winding of the transformer, and charging a high-voltage storage capacitor with the rectified high voltage
- the shock is generated by switching the terminals of the high-voltage storage capacitor into electrical contact with the defibrillation leads and discharging the capacitor through the leads, electrodes, and, ultimately, cardiac tissue It is therefore necessary to provide switching circuits in the implantable defib ⁇ llator, controlled by low voltage circuits, for switching
- a biphasic shock waveform can reduce the threshold energy level necessary for successful defibrillation
- the biphasic waveform can be generated by initially discharging the stored energy in one direction between a pair of defibrillation electrodes, followed by a switched reversal of direction during the course of the discharge
- the discharge path can be switched du ⁇ ng the course of the discharge by disconnecting the initial pair of electrodes from the storage capacitor and connecting a different second pair of electrodes
- the second pair of electrodes may or may not share a common electrode with the first pair of electrodes
- Either type of switching can be accomplished with an electronic circuit known as a bridge, including four or more semiconductor switch components constructed to tolerate the highest voltage of the stored energy
- Each semiconductor switch is typically characterized as having three terminals a common terminal a control terminal and a high voltage tolerant terminal, which may be designated COM, CTL and HV, respectively
- the common terminal (COM) is a reference for the control terminal (CTL) and the high voltage terminal (HV)
- the semiconductor switch components may be MOSFETs, IGBTs (insulated gate bipolar transistors) or MCTs (MOS-controlled thy ⁇ sters)
- Other devices are feasible also, such as bipolar transistors and GTO (gate-turn-off) thy ⁇ sters, at the cost of greater energy losses Disclosure of Invention
- the invention has the advantage of greater isolation in a smaller physical volume, between the low- and high-voltage sides, than can be accomplished with transformer coupling, with excellent noise immunity, and with shorter turn-on and turn-off transition times than can be accomplished with conventional solid state photovoltaic relays
- an optically-controlled high-voltage switch for an implantable defib ⁇ llator mcludes a three-terminal high-voltage-tolerant semiconductor switch having a high-voltage terminal, a common terminal, and a control terminal, and a photovoltaic coupler/isolator in circuit communication across the control and common terminals of the semiconductor switch
- a low voltage current source is in circuit communication with a light emitting device of the photovoltaic coupler/isolator
- a switch-off opto-isolator is in circuit communication across the control and common terminals of the semiconductor switch
- a switch-off low voltage current source is in circuit communication with a light emitting device of the switch-off opto-isolator
- FIG 1 is a block diagram of an implantable cardiac stimulator, including a defib ⁇ llator
- FIG 2 is a schematic illustration oi a bridge circuit that is useful in an implantable defib ⁇ llator for switching high voltages between a storage capacitor and high-voltage defibrillation leads
- FIG 3 is a schematic illustration of one embodiment of a high-voltage semiconductor switch of the bridge circuit of FIG 2 together with optical isolation circuitry for isolating the high-voltage switch from the low-voltage control circuitry of the defib ⁇ llator
- FIG 4 is an alternative embodiment of the circuitry of FIG 3
- FIG 5 is another alternative embodiment of the circuitry of FIG 3
- FIG 6 is a further alternative embodiment of the circuitry of FIG 3
- FIG 7 is another alternative embodiment of the circuitry of FIG 3 Best Mode for Carrying Out the Invention
- FIG 1 is a block diagram illustrating a rate adaptive pacemaker/defib ⁇ llator 10 within a hermetically sealed, implantable case 11
- a microprocessor 12 preferably provides pacemaker control and computational facilities It will be appreciated that other forms of circuitry, such as analog or discrete digital circuitry can be used in place ot microprocessor 12 However, a microprocessor is preferred for its miniature size and its flexibility, both of which are of critical importance in the implantable systems in which it is envisioned the invention will find use
- a particularly energy efficient microprocessor which is designed specifically for use with implantable medical devices is fully desc ⁇ bed in Gordon, et al , U S Patent No 4,404,972
- the microprocessor 12 has input/output ports connected in a conventional manner via bidirectional bus 14 to a memory 16, an A-V interval timer 18, and a pacing interval timer 20
- the A-V interval timer 18 and pacing interval timer 20 each has an output connected individually to a corresponding input port of the microprocessor 12 by lines 22 and 24 respectively
- Memory 16 preferably includes both ROM and RAM
- the microprocessor 12 may also contain additional ROM and RAM as described in the Gordon, et al U S Patent No 4,404,972
- the pacemaker operating routine is stored in ROM
- the RAM stores various programmable parameters and variables
- the A-V and pacing interval timers 18 and 20 may be external to the microprocessor 12, as illustrated, or internal thereto, as described in the Gordon, et al U S Patent No 4,404,972
- the timers 18, 20 are suitable conventional up or down counters of the type that are initially loaded with a count value and count up to or down from the value and output a roll-over bit upon completing the programmed count
- the initial count value is loaded into the timers 18, 20 on bus 14 and the respective roll-over bits are output to the microprocessor 12 on lines 22, 24
- the microprocessor 12 preferably also has an input/output port connected to a telemetry interface 26 by line 28
- the pacemaker when implanted is thus able to receive pacing, arrhythmia therapy, and rate control parameters from an external programmer and send data to an external receiver if desired
- Many suitable telemetry systems are known to those skilled in the art
- One such system and encoding arrangement is described in Armstrong, et al , U S Patent No
- the input of the atrial sense amplifier 38 and the output of the atrial stimulus pulse generator 30 are connected to a first conductor 46, which passes through a conventional first lead 48
- Lead 48 is inserted into a patient's heart 50 intravenously or in any other suitable manner
- the lead 48 has an electricalh conductive pacing/sensing tip 52 or tip and ring at its distal end which is electrically connected to the conductor 46
- the pacing/sensing tip 52 is preferably lodged in the right atrium 55
- the input of the ventricular sense amplifier 40 and the output of the ventricular stimulus pulse generator 32 are connected to a second conductor 54
- the second conductor 54 passes through a conventional second lead 56 which is inserted intravenously or otherwise in the right ventricle 58 of the heart 50
- the second lead 56 has an electrically conductive pacing/sensing tip 60 or tip and ring at its distal end
- the pacing/sensing tip 60 is electrically connected to the conductor 54
- the pacing/sensing tip 60 is preferably lodged on the wall of the right ventricle 58.
- the conductors 46, 54 conduct the stimulus pulses generated by the atrial and ventricular stimulus pulse generators 30,
- the implantable cardiac stimulator 10 also has a defib ⁇ llator circuit 62 If fibrillation is detected through the atrial or ventricular sense amplifiers 38, 40, a high energy shock can be delivered through defibrillation leads and electrodes 64, 66 Detection algorithms for detection of tachycardias and fibrillation are described in Pless, et al , U S Patent 4,880,005 Although patch- type electrodes are suggested by the drawing, endocardial electrodes for defibrillation are also known The shock is controlled by a shock driver circuit 68, which will be more particularly described hereafter All of the aforementioned components are powered by a power supply 70
- the power supply 70 may comprise either standard
- the bridge of an implantable defib ⁇ llator may include four semiconductor switches, SSI - SS4, arranged as shown in FIG 2
- the energy storage means Cl is commonly a capacitor sustaining a high voltage after being charged up by conventional voltage step-up and capacitor charging circuits
- switch controllers SCI and SC2 close semiconductor switches SSI and SS2, respectively, simultaneously
- lead Ll which is connected to an implanted defibrillation electrode, is raised to a high voltage with respect to lead L2.
- switch controllers SC3 and SC4 close switches SS3 and SS4, respectively, simultaneously, so that current flows from capacitor Cl along leads Ll and L2 in the opposite direction Still later, controllers SC3 and SC4 open switches SS3 and SS4
- controller SCI of FIG 2 includes a pulse current source 80, a photovoltaic coupler/isolator 82
- the semiconductor switch SSI of FIG 2 comprises a three-terminal high voltage semiconductor switch 88 (such as a commercially available IGBT device, type IRGPH40F)
- Each of the other controllers SC2, SC3 and SC4, and the other semiconductor switches SS2, SS3 and SS4 are comprised of similar circuitry and components
- Pulse current source 80 is electrically connected across a pair of terminals of an internal light-emitting device 90 of photovoltaic coupler/isolator 82
- a pair of terminals of an internal array of photovoltaic devices 92 of photovoltaic coupler/isolator 82 are connected across the CTL and COM terminals of the semiconductor switch 88
- Devices 90 and 92 are electrically isolated from each other on opposite sides of a low-voltage to high-voltage barrier VB Switch-
- pulse current source 80 forces current through ght- emitting device 90, causing device 90 to emit light and illuminate photovoltaic device 92, which in turn generates electrical current that flows into the CTL terminal of the semiconductor switch 88, causing an increase of voltage across the CTL and COM terminals As the CTL to COM voltage reaches a predetermined threshold that is characteristic of semiconductor switch 88, the semiconductor switch 88 turns on, or enters a state of high conductivity between the HV and COM terminals After switch 88 turns on, pulse current source 80 is switched off
- switch-off signal source 86 is activated
- Signal source 86 forces current through light-emitting device 94, causing device 94 to emit light and illuminate light-sensitive device 96, which can be a light-sensitive resistor, an opto-diode or an opto-transistor
- photovoltaic device 92 of the photovoltaic coupler/isolator 82 may not be optimized to inhibit current leakage therethrough in the reverse direction, I e , from CTL to COM, when pulsed current source 80 is turned off, thereby limiting the maximum time that the voltage between CTL and COM stays above the threshold that is required to maintain semiconductor switch 88 in a state of conduction That limitation could be compensated for by maintaining current from pulse current source 80 beyond the time when the turn- on threshold of semiconductor switch 88 is reached but at the cost of additional energy consumption that would decrease the life of the battery
- FIG 4 there is illustrated an improved embodiment that addresses the two limitations of the embodiment of FIG 3 described above
- reverse leakage through photovoltaic device 92 is reduced by providing a separate diode 98 in series with photovoltaic device 92 between photovoltaic coupler/isolator 82 and terminal CTL of semiconductor switch 88
- reverse leakage between terminals CTL and COM within semiconductor switch 88 is partially compensated for by providing a capacitor 100 across terminals CTL and COM Capacitor 100 stores more energy than would be stored in semiconductor switch 88 alone, and therefore allows switch 88 to remain in a state of conduction for a longer pe ⁇ od of time, given the leakage path between CTL and COM, than would otherwise be the case
- FIG 5 there is shown an improved embodiment that eliminates the restriction on switching time set by photovoltaic coupler/ isolator 82
- the energy produced at the output of photovoltaic device 92 is stored in capacitor 60, which is isolated from the CTL terminal of semiconductor switch 88 by a second opto-isolator 102 that is in a state of low conductivity
- the storage of energy is accompanied by a rise of voltage across capacitor 100
- the pulse current source 80 would be switched off Thereafter, ' switch-on" signal source 105 is activated to force current through light-emitting device 104, causing device 104 to emit light and illuminate hght- sensitive device 106, which can be a light-sensitive resistor, an opto-diode or an opto-transistor
- a path of high conductivity is made between capacitor 60 and terminal CTL, causmg charge to be transferred from capacitor 100 to the CTL input of
- switch SS4 or SS2 whenever switch SSI or SS3 is switched on first relative to switch SS4 or SS2, respectively, switch SS4 or SS2 experiences a rapidly rising voltage between its
- FIG 6 there is illustrated a further embodiment in which protection is provided for semiconductor switch 88 to prevent it from being switched on unintentionally due to voltage transients between the HV and COM terminals giving rise to an unwanted, and possibly threshold- exceeding, voltage between the CTL and COM terminals, as discussed above.
- FIG 5 differs from that of FIG 5 in that opto-isolator 84 is replaced by a depletion mode MOSFET 108 having its drain terminal D connected to the CTL terminal of switch 88, and having its source terminal S connected to the COM terminal of switch 88 MOSFET 108 remains in a state of high conductivity between its source S and drain D terminals so long as zero voltage is applied between its gate G and source S terminals, thereby "shorting" the CTL and COM terminals of switch 88 and protecting switch 88 from being switched on unintentionally
- the COM terminal rather than being connected to the bottom end of the photovoltaic array 92, is connected to the middle of the array The bottom end of the photovoltaic array 92 is connected through diode 1 10 to the gate terminal G of MOSFET 108, and a further capacitor 112 is connected across the source S and dram D terminals of MOSFET 108
- An opto-isolator 1 14, similar to opto-isolator 84 of FIG 5, has an input
- MOSFET 108 and removing the voltage between source S and gate G so that MOSFET 108 again enters a state of high conductivity between its drain D and source S terminals Consequently, the voltage between the CTL and COM terminals, and across capacitor 100, quickly falls below the activation threshold of switch 88 and switch 88 enters a state of low conductivity between its HV and COM terminals
- FIG 7 illustrates an embodiment of the invention utilizing a single optical isolator in each controller
- the optical isolator 82 turns on the high voltage switch 88, 88' using current from the high voltage capacitor Cl
- the pulse current source 80 drives the optical isolator 82 in the same manner as described above
- the optical isolator turns on the high voltage switch 88 using current from the high-voltage capacitor Cl
- Activation of the optical isolator 82 charges the gate of MOSFET 120 which passes current from the high-voltage capacitor Cl through resistor 122 to the switch 88, opening the switch 88 and delivering charge through the high voltage lead Ll
- the pulse current source 80' drives the optical isolator 82' as described above
- a capacitor 130 is precharged from the high- voltage capacitor Cl This capacitor 130 is needed to hold the switch 88' since the voltage across 88' would drop to zero when switch 88 was opened
- the capacitor 130 is charged across resistor 128
- the optical isolator 82' turns on the gate of a MOSFET 136
- the MOSFET 136 in turn charges the gate of switch 88' , using the charge on capacitor 130, connecting the high voltage capacitor Cl to the lead Ll
- the switch 88' is turned off by discharging the capacitor 130 through a JFET 134
- a zener diode 132 protects the switch 88' from overload
- the charge on capacitor 130 is maintained without further drain on the power capacitor Cl by current cut off circuit comprised of a MOSFET 138 and biasing resistor 140, together with a diode 142 which controls the direction of current flow through the circuit
- current cut off circuit comprised of a MOSFET 138 and biasing resistor 140, together with a diode 142 which controls the direction of current flow through the circuit
- Each of the circuits described utilizes an optical isolator in an implantable defib ⁇ llator to control the application of high voltage defib ⁇ llator shocks, thus providing greater isolation between the low-high voltage sides of defib ⁇ llator circuitry without transformer coupling and with excellent noise immunity
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP96944509A EP0869830A1 (en) | 1995-12-18 | 1996-12-18 | Optically controlled high-voltage switch for an implantable defibrillator |
JP09523004A JP2000502915A (en) | 1995-12-18 | 1996-12-18 | Light-controlled high-voltage switch for implantable defibrillator |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/574,353 | 1995-12-18 | ||
US08/574,353 US5693952A (en) | 1995-12-18 | 1995-12-18 | Optically controlled high-voltage switch for an implantable defibrillator |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1997022382A1 true WO1997022382A1 (en) | 1997-06-26 |
Family
ID=24295748
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1996/020355 WO1997022382A1 (en) | 1995-12-18 | 1996-12-18 | Optically controlled high-voltage switch for an implantable defibrillator |
Country Status (5)
Country | Link |
---|---|
US (1) | US5693952A (en) |
EP (1) | EP0869830A1 (en) |
JP (1) | JP2000502915A (en) |
CA (1) | CA2239986A1 (en) |
WO (1) | WO1997022382A1 (en) |
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EP1777820A3 (en) * | 2005-10-18 | 2008-04-16 | Honeywell International Inc. | Low Power Switching for Antenna Reconfiguration |
EP3624341A1 (en) * | 2018-09-14 | 2020-03-18 | Diehl Metering GmbH | Pulse generator |
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US7840264B1 (en) | 1996-08-19 | 2010-11-23 | Mr3 Medical, Llc | System and method for breaking reentry circuits by cooling cardiac tissue |
US7908003B1 (en) | 1996-08-19 | 2011-03-15 | Mr3 Medical Llc | System and method for treating ischemia by improving cardiac efficiency |
CA2278550A1 (en) * | 1997-01-24 | 1998-07-30 | Lawrence Gelbien | Pager-based controller |
US6829476B1 (en) | 1997-01-24 | 2004-12-07 | Lawrence J. Gelbein | Pager-based gas valve controller |
US6035235A (en) * | 1998-03-30 | 2000-03-07 | Angeion Corp. | Amplified voltage output switching network for a self-powered defibrillator |
US6298266B1 (en) | 1999-08-10 | 2001-10-02 | Intermedics Inc. | Methods and apparatus for treating fibrillation and creating defibrillation waveforms |
US6555935B1 (en) * | 2000-05-18 | 2003-04-29 | Rockwell Automation Technologies, Inc. | Apparatus and method for fast FET switching in a digital output device |
US6657274B2 (en) | 2001-10-11 | 2003-12-02 | Microsemi Corporation | Apparatus for controlling a high voltage circuit using a low voltage circuit |
DE10211766B4 (en) * | 2002-03-14 | 2004-07-01 | Forschungszentrum Jülich GmbH | Device for treating patients by means of brain stimulation and the use of the device in medicine |
US7824408B2 (en) | 2004-08-05 | 2010-11-02 | Tyco Healthcare Group, Lp | Methods and apparatus for coagulating and/or constricting hollow anatomical structures |
JP5113262B2 (en) | 2007-12-13 | 2013-01-09 | カーディアック ペースメイカーズ, インコーポレイテッド | Defibrillation shock output circuit |
FR2938656B1 (en) * | 2008-11-18 | 2011-08-26 | Thales Sa | INTRINSIC SECURITY SYSTEM AND TEST MODULE, IN PARTICULAR FOR USE IN A RAILWAY SIGNALING SYSTEM |
US9759202B2 (en) | 2008-12-04 | 2017-09-12 | Deep Science, Llc | Method for generation of power from intraluminal pressure changes |
US9526418B2 (en) | 2008-12-04 | 2016-12-27 | Deep Science, Llc | Device for storage of intraluminally generated power |
US9567983B2 (en) | 2008-12-04 | 2017-02-14 | Deep Science, Llc | Method for generation of power from intraluminal pressure changes |
US9631610B2 (en) | 2008-12-04 | 2017-04-25 | Deep Science, Llc | System for powering devices from intraluminal pressure changes |
US9353733B2 (en) | 2008-12-04 | 2016-05-31 | Deep Science, Llc | Device and system for generation of power from intraluminal pressure changes |
US8433404B2 (en) | 2009-05-19 | 2013-04-30 | Cardiac Pacemakers, Inc. | Integrated high voltage output circuit |
US8859884B2 (en) * | 2009-10-19 | 2014-10-14 | Helios Focus Llc | Solar photovoltaic module safety shutdown system |
US9941421B2 (en) | 2009-10-19 | 2018-04-10 | Helios Focus Llc | Solar photovaltaic module rapid shutdown and safety system |
US10121913B2 (en) | 2009-10-19 | 2018-11-06 | Helios Focus Llc | Solar photovoltaic module safety shutdown system |
US8936631B2 (en) * | 2010-01-04 | 2015-01-20 | Covidien Lp | Apparatus and methods for treating hollow anatomical structures |
JP5776165B2 (en) * | 2010-11-05 | 2015-09-09 | 株式会社ニデック | Biological tissue stimulation circuit |
US9295850B2 (en) * | 2012-04-24 | 2016-03-29 | Medtronic, Inc. | Charge-balancing during electrical stimulation |
WO2019179951A1 (en) * | 2018-03-23 | 2019-09-26 | British Telecommunications Public Limited Company | Passive optical sensors |
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- 1996-12-18 JP JP09523004A patent/JP2000502915A/en active Pending
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EP1777820A3 (en) * | 2005-10-18 | 2008-04-16 | Honeywell International Inc. | Low Power Switching for Antenna Reconfiguration |
EP3624341A1 (en) * | 2018-09-14 | 2020-03-18 | Diehl Metering GmbH | Pulse generator |
CN110912538A (en) * | 2018-09-14 | 2020-03-24 | 代傲表计有限公司 | Pulse generator |
US10784852B2 (en) | 2018-09-14 | 2020-09-22 | Diehl Metering Gmbh | Pulse generator and consumption meter |
Also Published As
Publication number | Publication date |
---|---|
US5693952A (en) | 1997-12-02 |
CA2239986A1 (en) | 1997-06-26 |
EP0869830A1 (en) | 1998-10-14 |
JP2000502915A (en) | 2000-03-14 |
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