WO1997027614A1 - Method and apparatus for controlling dust particle agglomerates - Google Patents
Method and apparatus for controlling dust particle agglomerates Download PDFInfo
- Publication number
- WO1997027614A1 WO1997027614A1 PCT/GB1997/000182 GB9700182W WO9727614A1 WO 1997027614 A1 WO1997027614 A1 WO 1997027614A1 GB 9700182 W GB9700182 W GB 9700182W WO 9727614 A1 WO9727614 A1 WO 9727614A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plasma
- temperature
- particle
- dust
- agglomerates
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
Definitions
- the present invention relates to dust particle agglomerates in particular the present invention relates to controlled formation and ⁇ destruction of such agglomerates as well as to applications of the agglomerates
- the present invention provides a method of and the conditions for controlled fabrication of dust particle agglomerates as well as a method of and the conditions for controlled i destruction of such agglomerates.
- the present invention further identifies uses of dust particle agglomerates
- the present invention provides a method of controlling dust particle agglomeration in a plasma comprising adjusting the ratio of temperatures of first and second particle species within the plasma o
- the ratio of temperatures is adjusted by increasing or decreasing the temperature of the first of the particle SDecies without suDsta ⁇ tially altering the temperature of the second of the particle species
- the ratio of neutral gas particle temperature with respect to dust particle temperature is adjusted
- the neutral gas particle temperature may be adjusted by heating or cooling the neutral gas supplied to the plasma
- the dust particle ⁇ temperature is adjusted by heating or cooling the source of the dust particles
- movement of dust particle agglomerates formed within the plasma may be controlled preferably by the application of external electric and magnetic fields which are preferably substantially i o orthogonal
- dust particle agglomeration is reduced by reducing the ratio of the plasma electron temperature to the plasma ion temperature
- the ratio is reduced by increasing the plasma ion temperature and ideally the plasma ion temperature is ⁇ ⁇ increased so that it is substantially equal to the plasma electron temperature
- the plasma ion temperature may be increased by passing one or more shock waves through the plasma by means of a high pressure gas discharge, a pulsed electron beam or RF injection 20
- the present invention provides apparatus for controlling formation of dust particle agglomerates in a plasma comprising a plasma containment vessel, plasma generation means including one or more electrodes and temperature control means for controlling the ratio of temperatures of first and second particle species 2 within the plasma
- the temperature control means comprises a heat exchanger device which may be in thermal contact with a supply of neutral gas to the plasma containment vessel or may be in thermal contact with the source of dust particles M )
- the temperature control means may include heat radiative material located within the plasma containment vessel
- the temperature control means may comprise a shock wave generator, means for directing the shock wave through the plasma and valve means for controlling the period of the shock waves through the plasma
- the shock wave generator is arranged so that the shock waves propagate transversely of the applied RF plasma field
- the shock wave generator may comprise high pressure gas discharge means s or a pulsed electron beam generator or separate RF injection means
- the present invention provides a method of generating shielding for exposed surfaces in a plasma containment vessel comprising providing a source of dust particles, adjusting the ratio of temperatures of first and second particle species 10 within the plasma to generate dust particle agglomerates and positioning the dust particle agglomerates adjacent the exposed surfaces to be shielded
- dust particles is intended as reference to microscopic, for i example sub-micron, particles and molecules of any matter Solely for the purpose of example, matter which forms dust particle agglomerates includes silicon silane, aluminium, glass melamine, formaldehyde and carbon
- FIG. 1 is a schematic diagram of plasma reactor apparatus i in accordance with the present invention.
- FIG. 2 is a schematic diagram of alternative plasma reactor apparatus in accordance with the present invention.
- n n is the neutral density and n, is the ion density
- n/n ⁇ describes the degree of ionization which is usually of the order of 10 5 - 10 e where neutral particle species are employed in the plasma chamber
- Equation (7) applies to situations in which a neutral gas is employed within the plasma reactor Considering equation (7) from equation (6) it is seen that // renew is positive for T ⁇ 7 " founded which in turn means that agglomerate formation only occurs where T tribe ⁇ T
- Figure 1 illustrates a plasma reactor 1 of the type typically employed in silicon chip manufacture
- the plasma reactor 1 comprises a chamber 2 in which a pair of parallel electrode plates 3 4 are mounted One of the e'ectrode plates 3 is grounded whilst the second of the electrode plates 4 the driven electrode is connected to an RF power source 5 which conveniently includes an RF generator 6 and a matching network 7 which are connected through an isolating capacitor 8 to the driven electrode plate 4
- the wafer to be etched is located on the grounded electrode plate 3
- the chamber 2 is evacuated to pressures in the region of 2 mBars
- TJT, 1x10 2 ⁇
- the figures given above for operation of the plasma reactor 1 are typical values, it will be understood that the piasma reactor may be operated under conditions different to those described above whilst still enabling control of dust particle agglomerate formation as described below
- a supply 9 of a neutral gas such as helium is connected via a 0 pump to the plasma chamber 2 so that the neutral gas circulates within the chamber
- the neutral gas particles are thus the dominant particle species within the chamber 2
- the supply 9 of neutral gas also includes a temperature i control device 10 for controlling the temperature of the neutral gas supplied to the chamber 2
- the temperature control device 10 may conveniently be in the form of heat exchanger coils or fins thermally in contact with the gas conduit connecting the gas supply 9 to the inlet to the piasma chamber
- Alternative temperature control devices 10 employing lasers for example may also be used
- the temperature of the neutral gas 7 " supplied to the chamber 2 with respect to the temperature of the dust particles T
- the plasma reactor affords control of the growth of dust particle agglomerates
- the neutral gas is heated so that the temperature of the gas is greater than the dust particle temperature, i e n >
- growth of agglomerates is enabled and agglomerates A form in the plasma region between the electrode plates
- the neutral gas is cooled so that T n .T d then formation of dust particle agglomerates is prevented
- the extent of the difference between the temperatures of the neutral gas and the dust particles determines the number and size of the ag
- the temperature control device 10 may be in the form of a heat exchanger pad thermally in contact with the wafer substrate This enables the temperature of the substrate to be controlled which in turn controls the temperature of the dust particles produced during etching of the substrate
- the temperature control device may be in the form of an infra-red radiation emitting material mounted on one or more of the walls of the plasma chamber This material is used to directly heat the dust particles within the plasma chamber
- the wavelength of the infra-red radiation is preferably of the order of the dust particle size
- the material is mounted within the chamber, alternatively the material may be mounted externally of the chamber adjacent one or more regions of the chamber walls which are substantially transparent to infra-red radiation It will of course be understood that other temperature control devices for adjusting
- deposition of the dust particle agglomerates may be controlled employing the principle of magnetohydrodynamics
- E orthogonal electric
- S magnetic
- FIG. 2 shows an alternative plasma reactor 1 1 for preventing the formation of dust particle agglomerates in an environment where the number of neutral gas particles is negligible, i e an environment for which equation (8) applies
- the plasma reactor 1 1 is similar to that of Figure 1 and includes a chamber ⁇ ⁇ 12 in which are located opposed electrode plates 13, 14 One of the electrode plates 13 is connected to ground whilst the other of the electrode plates 14 is connected to an RF generator 15 which is identical to the RF generator of Figure 1
- the temperature of the dust particles and plasma ions is generally kept to around room temperature i e 310 K 0
- a temperature control device 20 ts again provided to control the formation of dust particle agglomerates between the electrode plates
- the second criteria for agglomeration i e equation (8) applies Hence, in this arrangement the temperature control
- the separation of the shock waves is determined in dependence on the ratio of the distance to be travelled by the shock wave L, (in the case of plasma etching, the length of the chip) and the velocity of the shock wave v Sh oc k
- shock waves which are generated heat the plasma ions, without significantly increasing the plasma electron temperature which prevents or at the very least slows down the formation of the agglomerates
- the shock waves also exert an electrostatic pressure on the charged particles in the plasma which overcomes the attractive forces between the dust particles thereby assisting in controlling the formation of agglomerates
- Shock waves with energies of the order of 10 MeV are preferred
- suitable shock waves may alternatively be generated using a pulsed electron beam directed transversely of the applied RF field at an energy of around 15-20 KeV or RF injection using a separate antenna similarly directed transversely of the plasma field
- ion acoustic waves which resonate with the plasma ions can also be used to heat the plasma ions
- the ion acoustic waves are generated by a small antenna positioned at the side of the plasma
- Dust particle agglomerations may be employed to good effect in providing protection for surfaces against radiation damage
- dust agglomerates may be controllably formed and injected onto the walls of a fusion device which would have the effect of increasing the effective 'wall surface area and reducing wall loading due to energetic particle and radiation flux
- the wall loading due to incident energetic particles and radiation, is of the order of 5MW/m 2
- the intensity is great enough to cause sputtering and evaporation from the wall surfaces which produces large quantities of dust and causes erosion of the surfaces
- the method described above for controlling the formation of dust particle agglomerates may be employed to control the formation of agglomerates o adjacent the wall surfaces to form a protection against incident radiation and energetic particles
- the layer thickness / dust size a and density n d need to satisfy the following criteria n d a l s 1
- thermometers and other temperature monitoring devices may be employed to monitor the temperature of individual particles species in the plasma reactor thereby enabling additional control of agglomerate formation
- the temperature of the i neutral gas flowing into the plasma chamber may be monitored using conventional gas temperature measures
- the temperature of particle species within the chamber may be measured using conventional temperature probes
- control criteria in each case are associated with one another and reflect opposing extremes, i e (i) where the number of neutral particles is negligible and (n) where the number of neutral particles dominate, of a common technical effect
- the control criteria thus identify the dominant factors determining dust agglomeration in each environment
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19781536T DE19781536T1 (en) | 1996-01-22 | 1997-01-22 | Method and device for controlling dust particle agglomerates |
JP9526647A JP2000504151A (en) | 1996-01-22 | 1997-01-22 | Method and apparatus for controlling agglomerates of dust particles |
GB9815913A GB2324647B (en) | 1996-01-22 | 1997-01-22 | Method and apparatus for controlling dust particle agglomerates |
AU14500/97A AU1450097A (en) | 1996-01-22 | 1997-01-22 | Method and apparatus for controlling dust particle agglomerates |
US09/101,930 US6136256A (en) | 1996-01-22 | 1997-01-22 | Method and apparatus for controlling dust particle agglomerates |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9601208.3A GB9601208D0 (en) | 1996-01-22 | 1996-01-22 | Formation and destruction of dust particle agglomerates |
GB9601208.3 | 1996-01-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1997027614A1 true WO1997027614A1 (en) | 1997-07-31 |
Family
ID=10787345
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB1997/000182 WO1997027614A1 (en) | 1996-01-22 | 1997-01-22 | Method and apparatus for controlling dust particle agglomerates |
Country Status (6)
Country | Link |
---|---|
US (1) | US6136256A (en) |
JP (1) | JP2000504151A (en) |
AU (1) | AU1450097A (en) |
DE (1) | DE19781536T1 (en) |
GB (1) | GB9601208D0 (en) |
WO (1) | WO1997027614A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100649668B1 (en) * | 2005-01-03 | 2006-11-27 | 테스콤 주식회사 | Continuous surface-treating apparatus for film shape of polymer and continuous surface-treating method thereof |
KR100649665B1 (en) * | 2005-01-03 | 2006-11-27 | 테스콤 주식회사 | Continuous surface-treating apparatus for three-dimensional shape of polymer |
KR100607704B1 (en) * | 2005-03-31 | 2006-08-02 | 임덕구 | Surface treatment unit of macromolecule forming products |
KR100897356B1 (en) * | 2007-10-02 | 2009-05-15 | 세메스 주식회사 | Method and apparatus of cleaning a substrate |
CN102306469A (en) * | 2011-07-14 | 2012-01-04 | 大连理工大学 | Device for observing dust pattern |
US10067418B2 (en) * | 2014-05-12 | 2018-09-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Particle removal system and method thereof |
JP6590203B2 (en) * | 2015-11-12 | 2019-10-16 | パナソニックIpマネジメント株式会社 | Fine particle production apparatus and fine particle production method |
KR20210143412A (en) | 2020-05-20 | 2021-11-29 | 삼성전자주식회사 | Cleaning method and cleaning sytsem for reticle pod |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0425419A2 (en) * | 1989-10-23 | 1991-05-02 | International Business Machines Corporation | Methods and apparatus for contamination control in plasma processing |
US5350454A (en) * | 1993-02-26 | 1994-09-27 | General Atomics | Plasma processing apparatus for controlling plasma constituents using neutral and plasma sound waves |
DE19502865A1 (en) * | 1994-01-31 | 1995-08-03 | Hemlock Semiconductor Corp | Sealed reactor used to produce silicon@ of semiconductor quality |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3847652A (en) * | 1972-12-08 | 1974-11-12 | Nasa | Method of preparing water purification membranes |
US4019842A (en) * | 1975-02-24 | 1977-04-26 | Xerox Corporation | Apparatus for forming magnetite electrostatographic carriers |
US4246208A (en) * | 1979-03-22 | 1981-01-20 | Xerox Corporation | Dust-free plasma spheroidization |
US5769953A (en) * | 1995-05-01 | 1998-06-23 | Bridgestone Corporation | Plasma and heating method of cleaning vulcanizing mold for ashing residue |
-
1996
- 1996-01-22 GB GBGB9601208.3A patent/GB9601208D0/en active Pending
-
1997
- 1997-01-22 US US09/101,930 patent/US6136256A/en not_active Expired - Fee Related
- 1997-01-22 DE DE19781536T patent/DE19781536T1/en not_active Withdrawn
- 1997-01-22 JP JP9526647A patent/JP2000504151A/en active Pending
- 1997-01-22 WO PCT/GB1997/000182 patent/WO1997027614A1/en active Application Filing
- 1997-01-22 AU AU14500/97A patent/AU1450097A/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0425419A2 (en) * | 1989-10-23 | 1991-05-02 | International Business Machines Corporation | Methods and apparatus for contamination control in plasma processing |
US5350454A (en) * | 1993-02-26 | 1994-09-27 | General Atomics | Plasma processing apparatus for controlling plasma constituents using neutral and plasma sound waves |
DE19502865A1 (en) * | 1994-01-31 | 1995-08-03 | Hemlock Semiconductor Corp | Sealed reactor used to produce silicon@ of semiconductor quality |
Non-Patent Citations (1)
Title |
---|
BRATTLI A ET AL: "Cooling by dust in levitation experiments and its effect on dust cloud equilibrium profiles", DUSTY PLASMAS - 95 WORKSHOP ON GENERATION, TRANSPORT, AND REMOVAL OF PARTICLES IN PLASMAS, WICKENBURG, AZ, USA, 1-7 OCT. 1995, vol. 14, no. 2, ISSN 0734-2101, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (VACUUM, SURFACES, AND FILMS), MARCH-APRIL 1996, AIP FOR AMERICAN VACUUM SOC, USA, pages 644 - 648, XP002029779 * |
Also Published As
Publication number | Publication date |
---|---|
JP2000504151A (en) | 2000-04-04 |
GB9601208D0 (en) | 1996-03-20 |
US6136256A (en) | 2000-10-24 |
DE19781536T1 (en) | 1999-03-18 |
AU1450097A (en) | 1997-08-20 |
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