WO1997050116A1 - A capacitor and methods of forming a capacitor - Google Patents
A capacitor and methods of forming a capacitor Download PDFInfo
- Publication number
- WO1997050116A1 WO1997050116A1 PCT/US1997/010574 US9710574W WO9750116A1 WO 1997050116 A1 WO1997050116 A1 WO 1997050116A1 US 9710574 W US9710574 W US 9710574W WO 9750116 A1 WO9750116 A1 WO 9750116A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- capacitor
- plate
- forming
- barrier layer
- dielectric
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50329798A JP3822642B2 (en) | 1996-06-26 | 1997-06-23 | Capacitor formation method |
DE69736816T DE69736816T2 (en) | 1996-06-26 | 1997-06-23 | METHOD FOR PRODUCING A CONDENSER |
EP97932203A EP0958600B1 (en) | 1996-06-26 | 1997-06-23 | Method of forming a capacitor |
AU35722/97A AU3572297A (en) | 1996-06-26 | 1997-06-23 | A capacitor and methods of forming a capacitor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/670,644 | 1996-06-26 | ||
US08/670,644 US5843830A (en) | 1996-06-26 | 1996-06-26 | Capacitor, and methods for forming a capacitor |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1997050116A1 true WO1997050116A1 (en) | 1997-12-31 |
Family
ID=24691238
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1997/010574 WO1997050116A1 (en) | 1996-06-26 | 1997-06-23 | A capacitor and methods of forming a capacitor |
Country Status (8)
Country | Link |
---|---|
US (3) | US5843830A (en) |
EP (1) | EP0958600B1 (en) |
JP (2) | JP3822642B2 (en) |
KR (1) | KR100411353B1 (en) |
AT (1) | ATE342581T1 (en) |
AU (1) | AU3572297A (en) |
DE (1) | DE69736816T2 (en) |
WO (1) | WO1997050116A1 (en) |
Cited By (2)
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---|---|---|---|---|
US6888189B2 (en) | 2000-11-08 | 2005-05-03 | Sanyo Electric Co., Ltd. | Dielectric element including oxide-based dielectric film and method of fabricating the same |
US7221015B2 (en) | 2002-03-18 | 2007-05-22 | Fujitsu Limited | Semiconductor device and method of manufacturing the same |
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US6093575A (en) * | 1996-09-04 | 2000-07-25 | Nippon Steel Corporation | Semiconductor device and production method of a semiconductor device having a capacitor |
US6251720B1 (en) | 1996-09-27 | 2001-06-26 | Randhir P. S. Thakur | High pressure reoxidation/anneal of high dielectric constant materials |
US5910880A (en) | 1997-08-20 | 1999-06-08 | Micron Technology, Inc. | Semiconductor circuit components and capacitors |
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US6063713A (en) * | 1997-11-10 | 2000-05-16 | Micron Technology, Inc. | Methods for forming silicon nitride layers on silicon-comprising substrates |
US6165833A (en) | 1997-12-19 | 2000-12-26 | Micron Technology, Inc. | Semiconductor processing method of forming a capacitor |
US6911371B2 (en) * | 1997-12-19 | 2005-06-28 | Micron Technology, Inc. | Capacitor forming methods with barrier layers to threshold voltage shift inducing material |
KR100506513B1 (en) * | 1997-12-27 | 2007-11-02 | 주식회사 하이닉스반도체 | How to Form Ferroelectric Capacitors |
US6682970B1 (en) | 1998-02-27 | 2004-01-27 | Micron Technology, Inc. | Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer |
US7034353B2 (en) | 1998-02-27 | 2006-04-25 | Micron Technology, Inc. | Methods for enhancing capacitors having roughened features to increase charge-storage capacity |
US6150706A (en) * | 1998-02-27 | 2000-11-21 | Micron Technology, Inc. | Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer |
US6162744A (en) * | 1998-02-28 | 2000-12-19 | Micron Technology, Inc. | Method of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having high-K oxygen containing capacitor dielectric layers |
US6191443B1 (en) | 1998-02-28 | 2001-02-20 | Micron Technology, Inc. | Capacitors, methods of forming capacitors, and DRAM memory cells |
US6156638A (en) * | 1998-04-10 | 2000-12-05 | Micron Technology, Inc. | Integrated circuitry and method of restricting diffusion from one material to another |
US6730559B2 (en) | 1998-04-10 | 2004-05-04 | Micron Technology, Inc. | Capacitors and methods of forming capacitors |
US6165834A (en) * | 1998-05-07 | 2000-12-26 | Micron Technology, Inc. | Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell |
US6255186B1 (en) | 1998-05-21 | 2001-07-03 | Micron Technology, Inc. | Methods of forming integrated circuitry and capacitors having a capacitor electrode having a base and a pair of walls projecting upwardly therefrom |
JP2000138349A (en) * | 1998-10-30 | 2000-05-16 | Sharp Corp | Manufacture of semiconductor memory device |
US6159786A (en) * | 1998-12-14 | 2000-12-12 | Taiwan Semiconductor Manufacturing Company | Well-controlled CMP process for DRAM technology |
EP1150354A4 (en) * | 1999-02-04 | 2002-08-28 | Rohm Co Ltd | Capacitor and method of its manufacture |
US6696718B1 (en) | 1999-04-06 | 2004-02-24 | Micron Technology, Inc. | Capacitor having an electrode formed from a transition metal or a conductive metal-oxide, and method of forming same |
TW454330B (en) * | 1999-05-26 | 2001-09-11 | Matsushita Electronics Corp | Semiconductor apparatus and its manufacturing method |
EP1102329A3 (en) | 1999-11-17 | 2003-09-24 | Sanyo Electric Co., Ltd. | Dielectric element |
JP3976462B2 (en) * | 2000-01-26 | 2007-09-19 | エルピーダメモリ株式会社 | Manufacturing method of semiconductor device |
US6590246B1 (en) | 2000-02-08 | 2003-07-08 | Micron Technology, Inc. | Structures and methods for improved capacitor cells in integrated circuits |
US7005695B1 (en) | 2000-02-23 | 2006-02-28 | Micron Technology, Inc. | Integrated circuitry including a capacitor with an amorphous and a crystalline high K capacitor dielectric region |
US6339007B1 (en) | 2000-05-02 | 2002-01-15 | International Business Machines Corporation | Capacitor stack structure and method of fabricating description |
US6686298B1 (en) | 2000-06-22 | 2004-02-03 | Micron Technology, Inc. | Methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates |
US6833329B1 (en) | 2000-06-22 | 2004-12-21 | Micron Technology, Inc. | Methods of forming oxide regions over semiconductor substrates |
US6660657B1 (en) * | 2000-08-07 | 2003-12-09 | Micron Technology, Inc. | Methods of incorporating nitrogen into silicon-oxide-containing layers |
US6903005B1 (en) | 2000-08-30 | 2005-06-07 | Micron Technology, Inc. | Method for the formation of RuSixOy-containing barrier layers for high-k dielectrics |
US6562684B1 (en) | 2000-08-30 | 2003-05-13 | Micron Technology, Inc. | Methods of forming dielectric materials |
US6461909B1 (en) * | 2000-08-30 | 2002-10-08 | Micron Technology, Inc. | Process for fabricating RuSixOy-containing adhesion layers |
US6576964B1 (en) | 2000-08-31 | 2003-06-10 | Micron Technology, Inc. | Dielectric layer for a semiconductor device having less current leakage and increased capacitance |
US6521544B1 (en) | 2000-08-31 | 2003-02-18 | Micron Technology, Inc. | Method of forming an ultra thin dielectric film |
US6410968B1 (en) * | 2000-08-31 | 2002-06-25 | Micron Technology, Inc. | Semiconductor device with barrier layer |
US6709945B2 (en) * | 2001-01-16 | 2004-03-23 | Micron Technology, Inc. | Reduced aspect ratio digit line contact process flow used during the formation of a semiconductor device |
JP2002231903A (en) | 2001-02-06 | 2002-08-16 | Sanyo Electric Co Ltd | Dielectric element and method of manufacturing the same |
US6696336B2 (en) | 2001-05-14 | 2004-02-24 | Micron Technology, Inc. | Double sided container process used during the manufacture of a semiconductor device |
KR100420121B1 (en) * | 2001-06-21 | 2004-03-02 | 삼성전자주식회사 | Ferroelectric device using ferroelectric layer as planarization layer and method of forming the same |
US6878585B2 (en) | 2001-08-29 | 2005-04-12 | Micron Technology, Inc. | Methods of forming capacitors |
US6670717B2 (en) * | 2001-10-15 | 2003-12-30 | International Business Machines Corporation | Structure and method for charge sensitive electrical devices |
US6723599B2 (en) | 2001-12-03 | 2004-04-20 | Micron Technology, Inc. | Methods of forming capacitors and methods of forming capacitor dielectric layers |
JP2004063559A (en) * | 2002-07-25 | 2004-02-26 | Renesas Technology Corp | Semiconductor device |
US7008840B2 (en) * | 2002-08-26 | 2006-03-07 | Matsushita Electrical Industrial Co., Ltd. | Method for manufacturing semiconductor device with capacitor elements |
KR100492903B1 (en) * | 2002-11-13 | 2005-06-02 | 주식회사 하이닉스반도체 | Method of manufacturing capacitor for ferroelectric memory device |
KR20050002032A (en) * | 2003-06-30 | 2005-01-07 | 주식회사 하이닉스반도체 | Method for fabricating ferroelectric random access memory with merged-top electrode-plateline capacitor |
US7230292B2 (en) * | 2003-08-05 | 2007-06-12 | Micron Technology, Inc. | Stud electrode and process for making same |
US7256980B2 (en) * | 2003-12-30 | 2007-08-14 | Du Pont | Thin film capacitors on ceramic |
US7126182B2 (en) * | 2004-08-13 | 2006-10-24 | Micron Technology, Inc. | Memory circuitry |
US7776715B2 (en) | 2005-07-26 | 2010-08-17 | Micron Technology, Inc. | Reverse construction memory cell |
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JP4954614B2 (en) * | 2006-05-30 | 2012-06-20 | セイコーエプソン株式会社 | Method for manufacturing ferroelectric memory device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5335138A (en) * | 1993-02-12 | 1994-08-02 | Micron Semiconductor, Inc. | High dielectric constant capacitor and method of manufacture |
US5440157A (en) * | 1992-07-17 | 1995-08-08 | Kabushiki Kaisha Toshiba | Semiconductor integrated-circuit capacitor having a carbon film electrode |
US5442213A (en) * | 1993-06-23 | 1995-08-15 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with high dielectric capacitor having sidewall spacers |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4464701A (en) * | 1983-08-29 | 1984-08-07 | International Business Machines Corporation | Process for making high dielectric constant nitride based materials and devices using the same |
JPS63221646A (en) * | 1987-03-10 | 1988-09-14 | Nec Corp | Semiconductor device |
JPH0479317A (en) * | 1990-07-23 | 1992-03-12 | Sony Corp | Production of semiconductor device |
US5262343A (en) * | 1991-04-12 | 1993-11-16 | Micron Technology, Inc. | DRAM stacked capacitor fabrication process |
JP2722873B2 (en) * | 1991-07-29 | 1998-03-09 | 日本電気株式会社 | Semiconductor device and manufacturing method thereof |
JP3055242B2 (en) * | 1991-09-19 | 2000-06-26 | 日本電気株式会社 | Semiconductor device and manufacturing method thereof |
JPH05109982A (en) * | 1991-10-18 | 1993-04-30 | Sharp Corp | Semiconductor device and its manufacture |
US5401680A (en) * | 1992-02-18 | 1995-03-28 | National Semiconductor Corporation | Method for forming a ceramic oxide capacitor having barrier layers |
JP3141553B2 (en) * | 1992-08-06 | 2001-03-05 | 日本電気株式会社 | Method for manufacturing semiconductor device |
JPH0685193A (en) * | 1992-09-07 | 1994-03-25 | Nec Corp | Semiconductor device |
JPH0783061B2 (en) * | 1993-01-05 | 1995-09-06 | 日本電気株式会社 | Semiconductor device |
KR950009813B1 (en) * | 1993-01-27 | 1995-08-28 | 삼성전자주식회사 | Semiconductor device and manufacturing method thereof |
US5471364A (en) * | 1993-03-31 | 1995-11-28 | Texas Instruments Incorporated | Electrode interface for high-dielectric-constant materials |
US5330931A (en) * | 1993-09-22 | 1994-07-19 | Northern Telecom Limited | Method of making a capacitor for an integrated circuit |
JPH07106431A (en) * | 1993-10-01 | 1995-04-21 | Mitsubishi Electric Corp | Semiconductor device |
JPH07176627A (en) * | 1993-12-17 | 1995-07-14 | Nec Corp | Fabrication of semiconductor device |
US5504041A (en) * | 1994-08-01 | 1996-04-02 | Texas Instruments Incorporated | Conductive exotic-nitride barrier layer for high-dielectric-constant materials |
US5489548A (en) * | 1994-08-01 | 1996-02-06 | Texas Instruments Incorporated | Method of forming high-dielectric-constant material electrodes comprising sidewall spacers |
JPH08162528A (en) * | 1994-10-03 | 1996-06-21 | Sony Corp | Interlayer insulating film structure of semiconductor device |
JPH08148470A (en) * | 1994-11-21 | 1996-06-07 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
KR0168346B1 (en) * | 1994-12-29 | 1998-12-15 | 김광호 | Capacitor using high deelectric material and its fabrication method |
US5567636A (en) * | 1995-02-27 | 1996-10-22 | Motorola Inc. | Process for forming a nonvolatile random access memory array |
KR100199346B1 (en) * | 1995-04-04 | 1999-06-15 | 김영환 | Electrode of capacitor fabrication method |
JPH08316430A (en) * | 1995-05-15 | 1996-11-29 | Mitsubishi Electric Corp | Semiconductor storage device, its manufacture, and stacked capacitor |
US5654222A (en) * | 1995-05-17 | 1997-08-05 | Micron Technology, Inc. | Method for forming a capacitor with electrically interconnected construction |
US5663088A (en) * | 1995-05-19 | 1997-09-02 | Micron Technology, Inc. | Method of forming a Ta2 O5 dielectric layer with amorphous diffusion barrier layer and method of forming a capacitor having a Ta2 O5 dielectric layer and amorphous diffusion barrier layer |
US5786248A (en) * | 1995-10-12 | 1998-07-28 | Micron Technology, Inc. | Semiconductor processing method of forming a tantalum oxide containing capacitor |
-
1996
- 1996-06-26 US US08/670,644 patent/US5843830A/en not_active Expired - Lifetime
-
1997
- 1997-06-23 AT AT97932203T patent/ATE342581T1/en not_active IP Right Cessation
- 1997-06-23 JP JP50329798A patent/JP3822642B2/en not_active Expired - Lifetime
- 1997-06-23 WO PCT/US1997/010574 patent/WO1997050116A1/en active IP Right Grant
- 1997-06-23 EP EP97932203A patent/EP0958600B1/en not_active Expired - Lifetime
- 1997-06-23 DE DE69736816T patent/DE69736816T2/en not_active Expired - Lifetime
- 1997-06-23 AU AU35722/97A patent/AU3572297A/en not_active Abandoned
- 1997-06-23 KR KR10-1998-0710676A patent/KR100411353B1/en not_active IP Right Cessation
- 1997-08-15 US US08/912,900 patent/US5844771A/en not_active Expired - Lifetime
-
1998
- 1998-11-03 US US09/185,412 patent/US6171925B1/en not_active Expired - Lifetime
-
2006
- 2006-03-27 JP JP2006084544A patent/JP2006216978A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5440157A (en) * | 1992-07-17 | 1995-08-08 | Kabushiki Kaisha Toshiba | Semiconductor integrated-circuit capacitor having a carbon film electrode |
US5335138A (en) * | 1993-02-12 | 1994-08-02 | Micron Semiconductor, Inc. | High dielectric constant capacitor and method of manufacture |
US5442213A (en) * | 1993-06-23 | 1995-08-15 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with high dielectric capacitor having sidewall spacers |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6888189B2 (en) | 2000-11-08 | 2005-05-03 | Sanyo Electric Co., Ltd. | Dielectric element including oxide-based dielectric film and method of fabricating the same |
US7221015B2 (en) | 2002-03-18 | 2007-05-22 | Fujitsu Limited | Semiconductor device and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
JP2006216978A (en) | 2006-08-17 |
AU3572297A (en) | 1998-01-14 |
EP0958600B1 (en) | 2006-10-11 |
DE69736816T2 (en) | 2007-08-09 |
US6171925B1 (en) | 2001-01-09 |
EP0958600A1 (en) | 1999-11-24 |
JP3822642B2 (en) | 2006-09-20 |
KR20000022256A (en) | 2000-04-25 |
US5844771A (en) | 1998-12-01 |
KR100411353B1 (en) | 2004-04-13 |
DE69736816D1 (en) | 2006-11-23 |
ATE342581T1 (en) | 2006-11-15 |
US5843830A (en) | 1998-12-01 |
JP2001525986A (en) | 2001-12-11 |
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