WO1998024296A3 - Multilaminate piezoelectric high voltage stack - Google Patents

Multilaminate piezoelectric high voltage stack Download PDF

Info

Publication number
WO1998024296A3
WO1998024296A3 PCT/US1997/021302 US9721302W WO9824296A3 WO 1998024296 A3 WO1998024296 A3 WO 1998024296A3 US 9721302 W US9721302 W US 9721302W WO 9824296 A3 WO9824296 A3 WO 9824296A3
Authority
WO
WIPO (PCT)
Prior art keywords
piezoelectric
stack
layers
cavity
shock
Prior art date
Application number
PCT/US1997/021302
Other languages
French (fr)
Other versions
WO1998024296A2 (en
Inventor
Dennis W O'brien
Troy W Barbee Jr
Original Assignee
Univ California
Dennis W O'brien
Troy W Barbee Jr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California, Dennis W O'brien, Troy W Barbee Jr filed Critical Univ California
Publication of WO1998024296A2 publication Critical patent/WO1998024296A2/en
Publication of WO1998024296A3 publication Critical patent/WO1998024296A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H10N30/501—Piezoelectric or electrostrictive devices having a stacked or multilayer structure with non-rectangular cross-section in stacking direction, e.g. polygonal, trapezoidal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead based oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/871—Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based

Abstract

A shock or strain driven multilaminate piezoelectric high voltage stack (10) and fabrication process. The nanostructure includes alternating layers of piezoelectric (12) and conductor materials (11) forming a cylinder or similarly shaped stack of piezoelectric layers (12). For accelerator application the piezoelectric layers (12) have a coaxial cavity (14). Very high voltages can be generated when the piezoelectric stack (10) is subjected to mechanical shock. As shock propagates through piezoelectric stack (10) each layer of piezoelectric material (12) generates a voltage potential between its two adjacent conductor layers (11). For accelerator applications, charged particles at one end (15) of cavity in stack (10) are accelerated through cavity (14) to target (16). The piezoelectric stack (10) can be fabricated with discrete layers of piezoelectric (12) and conductor materials (11) stacked and mechanically bound within packaging (17). Alternatively, integrated solid state piezoelectric stacks (10) can be fabricated by successive masked deposition of piezoelectric (12) and conductor materials (11). Deposition of materials can be by physical or chemical vapor deposition, including RF sputtering and similar techniques.
PCT/US1997/021302 1996-11-20 1997-11-20 Multilaminate piezoelectric high voltage stack WO1998024296A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3146596P 1996-11-20 1996-11-20
US60/031,465 1996-11-20

Publications (2)

Publication Number Publication Date
WO1998024296A2 WO1998024296A2 (en) 1998-06-11
WO1998024296A3 true WO1998024296A3 (en) 1998-10-01

Family

ID=21859601

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1997/021302 WO1998024296A2 (en) 1996-11-20 1997-11-20 Multilaminate piezoelectric high voltage stack

Country Status (1)

Country Link
WO (1) WO1998024296A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6478412B1 (en) 1999-01-22 2002-11-12 Kansai Research Institute Piezoelectric thin film device, its production method, and ink-jet recording head
EP2224507B1 (en) * 2007-11-27 2014-10-08 Kyocera Corporation Multi-layer piezoelectric element, method for manufacturing the same
CN102522493B (en) * 2011-12-07 2013-10-02 中国科学院微电子研究所 Laminated structure of piezoelectric nanowire and manufacturing method thereof
CN113140668A (en) * 2020-01-19 2021-07-20 北京小米移动软件有限公司 Piezoelectric assembly, manufacturing method, screen component and mobile terminal

Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2479926A (en) * 1947-10-11 1949-08-23 Brush Dev Co Electrotransducer and method of making same
US3111741A (en) * 1958-05-23 1963-11-26 Corning Glass Works Solid delay line improvements
US3281612A (en) * 1962-09-12 1966-10-25 List Hans Piezoelectric device, particularly a force measuring instrument and the process of manufacturing same
US3390287A (en) * 1964-12-10 1968-06-25 Kistler Instrumente Ag Piezo-electric building units
US3824352A (en) * 1973-04-30 1974-07-16 Zenith Radio Corp Stacked piezoelectric transducer acting as quarter-wave resonator for recording video information
US4570098A (en) * 1983-06-20 1986-02-11 Nippon Soken, Inc. Temperature compensated stack of piezoelectric elements
US4632856A (en) * 1985-02-06 1986-12-30 Marcus Michael A Multilayer thin film electrical devices free of adhesive
US4752712A (en) * 1985-06-10 1988-06-21 Nippon Soken, Inc. Piezoelectric laminate stack
US4812698A (en) * 1986-09-29 1989-03-14 Mitsubishi Chemical Industries Limited Piezoelectric bending actuator
US4835436A (en) * 1988-03-21 1989-05-30 Lew Hyok S Piezoelectric impulse sensor
US4978881A (en) * 1988-07-20 1990-12-18 Ngk Spark Plug Co., Ltd. Piezoelectric actuator of lamination type
US5036240A (en) * 1988-07-18 1991-07-30 Lew Hyok S Impulse sensor with mechanical preamplification and noise cancellation
US5163209A (en) * 1989-04-26 1992-11-17 Hitachi, Ltd. Method of manufacturing a stack-type piezoelectric element
US5191687A (en) * 1990-09-28 1993-03-09 Caterpillar Inc. Process for making piezoelectric stacks
US5196756A (en) * 1988-07-15 1993-03-23 Hitachi Ltd. Stack-type piezoelectric element, process for producing the same, and stack-type piezoelectric device
US5325012A (en) * 1989-09-19 1994-06-28 Hitachi, Ltd Bonded type piezoelectric apparatus, method for manufacturing the same and bonded type piezoelectric element
US5410208A (en) * 1993-04-12 1995-04-25 Acuson Corporation Ultrasound transducers with reduced sidelobes and method for manufacture thereof
US5568679A (en) * 1993-12-20 1996-10-29 Nec Corporation Method of manufacturing laminated piezoelectric actuator having cavity
US5631463A (en) * 1992-09-01 1997-05-20 Canon Kabushiki Kaisha Displacement element, probe employing the element, and apparatus employing the probe

Patent Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2479926A (en) * 1947-10-11 1949-08-23 Brush Dev Co Electrotransducer and method of making same
US3111741A (en) * 1958-05-23 1963-11-26 Corning Glass Works Solid delay line improvements
US3281612A (en) * 1962-09-12 1966-10-25 List Hans Piezoelectric device, particularly a force measuring instrument and the process of manufacturing same
US3390287A (en) * 1964-12-10 1968-06-25 Kistler Instrumente Ag Piezo-electric building units
US3824352A (en) * 1973-04-30 1974-07-16 Zenith Radio Corp Stacked piezoelectric transducer acting as quarter-wave resonator for recording video information
US4570098A (en) * 1983-06-20 1986-02-11 Nippon Soken, Inc. Temperature compensated stack of piezoelectric elements
US4632856A (en) * 1985-02-06 1986-12-30 Marcus Michael A Multilayer thin film electrical devices free of adhesive
US4752712A (en) * 1985-06-10 1988-06-21 Nippon Soken, Inc. Piezoelectric laminate stack
US4812698A (en) * 1986-09-29 1989-03-14 Mitsubishi Chemical Industries Limited Piezoelectric bending actuator
US4835436A (en) * 1988-03-21 1989-05-30 Lew Hyok S Piezoelectric impulse sensor
US5196756A (en) * 1988-07-15 1993-03-23 Hitachi Ltd. Stack-type piezoelectric element, process for producing the same, and stack-type piezoelectric device
US5036240A (en) * 1988-07-18 1991-07-30 Lew Hyok S Impulse sensor with mechanical preamplification and noise cancellation
US4978881A (en) * 1988-07-20 1990-12-18 Ngk Spark Plug Co., Ltd. Piezoelectric actuator of lamination type
US5163209A (en) * 1989-04-26 1992-11-17 Hitachi, Ltd. Method of manufacturing a stack-type piezoelectric element
US5325012A (en) * 1989-09-19 1994-06-28 Hitachi, Ltd Bonded type piezoelectric apparatus, method for manufacturing the same and bonded type piezoelectric element
US5191687A (en) * 1990-09-28 1993-03-09 Caterpillar Inc. Process for making piezoelectric stacks
US5631463A (en) * 1992-09-01 1997-05-20 Canon Kabushiki Kaisha Displacement element, probe employing the element, and apparatus employing the probe
US5410208A (en) * 1993-04-12 1995-04-25 Acuson Corporation Ultrasound transducers with reduced sidelobes and method for manufacture thereof
US5568679A (en) * 1993-12-20 1996-10-29 Nec Corporation Method of manufacturing laminated piezoelectric actuator having cavity

Also Published As

Publication number Publication date
WO1998024296A2 (en) 1998-06-11

Similar Documents

Publication Publication Date Title
US7615942B2 (en) Cast dielectric composite linear accelerator
EP3646457B1 (en) Electrostatic actuator
US5374449A (en) Monolithic piezoelectric structural element for keyboards and method of manufacturing
US11065771B2 (en) Electroadhesive device, system and method for gripping
CN1815646B (en) Variable capacitor and method of manufacturing variable capacitor
EP1704757B1 (en) Compact accelerator
Quandt et al. Giant magnetostrictive spring magnet type multilayers
EP1193216A4 (en) Nanotweezers and nanomanipulator
Wang et al. Preparation and characterization of piezoelectric foams based on cyclic olefin copolymer
WO2002056669A3 (en) Thin film dielectric composite materials
WO1998024296A3 (en) Multilaminate piezoelectric high voltage stack
JP2003342069A (en) Piezoelectric ceramic composition, its preparation process and piezoelectric and dielectric elements
Hu et al. Static nano-control of cantilever beams using the inverse flexoelectric effect
US20100237747A1 (en) Piezoelectric Composite Material
Kim et al. Piezoelectric energy harvesting using a diaphragm structure
EP0565883A2 (en) Anisotropic transducer
Sato et al. Design of the metal-core piezoelectric fiber
Liu et al. Stiffness-tunable robotic gripper driven by dielectric elastomer composite actuators
WO2001096219A2 (en) Electro-adhesion device
Honda et al. Fabrication of actuators using magnetostrictive thin films
Turcu et al. Piezoelectric properties of novel oriented ceramic-polymer composites with 2-2 and 3-3 connectivity
Chu et al. Flexoelectric composite—A new prospect for lead-free piezoelectrics
WO2003105247A3 (en) Method of poling ferroelectric materials
US20040130238A1 (en) Composite material, for the production thereof and its use
US20040150493A1 (en) Ferroelectric devices and method relating thereto

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): CA JP KR US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: JP

Ref document number: 1998525619

Format of ref document f/p: F

122 Ep: pct application non-entry in european phase