WO1998029907A3 - Low voltage single supply cmos electrically erasable read-only memory - Google Patents

Low voltage single supply cmos electrically erasable read-only memory Download PDF

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Publication number
WO1998029907A3
WO1998029907A3 PCT/US1997/018800 US9718800W WO9829907A3 WO 1998029907 A3 WO1998029907 A3 WO 1998029907A3 US 9718800 W US9718800 W US 9718800W WO 9829907 A3 WO9829907 A3 WO 9829907A3
Authority
WO
WIPO (PCT)
Prior art keywords
memory
low voltage
electrically erasable
erasable read
single supply
Prior art date
Application number
PCT/US1997/018800
Other languages
French (fr)
Other versions
WO1998029907A2 (en
Inventor
John M Caywood
Original Assignee
John M Caywood
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/778,315 external-priority patent/US5790455A/en
Application filed by John M Caywood filed Critical John M Caywood
Priority to AU61298/98A priority Critical patent/AU6129898A/en
Priority to EP97954967A priority patent/EP0953211A2/en
Publication of WO1998029907A2 publication Critical patent/WO1998029907A2/en
Publication of WO1998029907A3 publication Critical patent/WO1998029907A3/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Abstract

P channel EEPROM cells are designed for integration into arrays written with single polarity signals developed from small, low power charge pumps. These cells reduce the additional masking steps that must be added to a CMOS logic process for EEPROM to only one additional step. The novel cells of this invention enable the array to function with a Vpp about 2 V less than that required by an N channel EEPROM cell, with similar writing speed and tunnel oxide thickness.
PCT/US1997/018800 1997-01-02 1997-12-24 Low voltage single supply cmos electrically erasable read-only memory WO1998029907A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU61298/98A AU6129898A (en) 1997-01-02 1997-12-24 Low voltage single supply cmos electrically erasable read-only memory
EP97954967A EP0953211A2 (en) 1997-01-02 1997-12-24 Low voltage single supply cmos electrically erasable read-only memory

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/778,315 1997-01-02
US08/778,315 US5790455A (en) 1997-01-02 1997-01-02 Low voltage single supply CMOS electrically erasable read-only memory
US08/890,415 US5986931A (en) 1997-01-02 1997-07-09 Low voltage single CMOS electrically erasable read-only memory
US08/890,415 1997-07-09

Publications (2)

Publication Number Publication Date
WO1998029907A2 WO1998029907A2 (en) 1998-07-09
WO1998029907A3 true WO1998029907A3 (en) 1998-09-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1997/018800 WO1998029907A2 (en) 1997-01-02 1997-12-24 Low voltage single supply cmos electrically erasable read-only memory

Country Status (5)

Country Link
US (2) US5986931A (en)
EP (1) EP0953211A2 (en)
AU (1) AU6129898A (en)
TW (1) TW376584B (en)
WO (1) WO1998029907A2 (en)

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Also Published As

Publication number Publication date
AU6129898A (en) 1998-07-31
US5986931A (en) 1999-11-16
US20020191439A1 (en) 2002-12-19
US6574140B2 (en) 2003-06-03
TW376584B (en) 1999-12-11
WO1998029907A2 (en) 1998-07-09
EP0953211A2 (en) 1999-11-03

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