WO1999010923B1 - Method for selective plasma etch - Google Patents

Method for selective plasma etch

Info

Publication number
WO1999010923B1
WO1999010923B1 PCT/US1998/017607 US9817607W WO9910923B1 WO 1999010923 B1 WO1999010923 B1 WO 1999010923B1 US 9817607 W US9817607 W US 9817607W WO 9910923 B1 WO9910923 B1 WO 9910923B1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
gas
dielectric layer
selectivity
seem
Prior art date
Application number
PCT/US1998/017607
Other languages
French (fr)
Other versions
WO1999010923A1 (en
Inventor
Helen H Zhu
George A Mueller
Thomas D Nguyen
Lumin Li
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Priority to EP98944527A priority Critical patent/EP1012877A1/en
Priority to KR1020007002106A priority patent/KR100563969B1/en
Priority to JP2000508137A priority patent/JP2001514447A/en
Publication of WO1999010923A1 publication Critical patent/WO1999010923A1/en
Publication of WO1999010923B1 publication Critical patent/WO1999010923B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Abstract

Disclosed is a method for improving the selectivity of dielectric layers to photoresist layers and base layers. The method is performed in a plasma processing chamber, and the photoresist layer is coated over the dielectric layer. The method includes introducing an etchant source gas into the plasma processing chamber, which consists essentially of a CxFy gas and an N2 gas. The method further includes striking a plasma in the plasma processing chamber from the etchant source gas. The method additionally includes etching at least a portion of the dielectric layer with the plasma through to a base layer that underlies the dielectric layer. The method is also well suited for anisotropically etching an oxide layer with very high selectivities to Si, Si3N4, TiN, and metal silicides.

Claims

AMENDED CLAIMS[received by the International Bureau on 8 March 1999 (08.03.99); original claims 1-28 replaced by amended claims 1-18 (6 pages)]
1. In a plasma processing chamber, a method for etching through a selected portion of a dielectric layer of a wafer, comprising:
introducing an etchant source gas into the plasma processing chamber, the etchant source gas consisting essentially of a CxFy gas and an N2 gas;
striking a plasma in the plasma processing chamber from the etchant source gas;
etching at least partially through the dielectric layer with said plasma; and
selecting one of the following gas flow rates: flowing the C2F6 gas at a flow rate of between about 2 and about 20 standard cubic centimeters per minute (seem); flowing the
C4F8 gas at a flow rate of between about 2 and about 15 standard cubic centimeters per minute (seem); and flowing the C3F6 gas at a flow rate of between about 2 and about 15 standard cubic centimeters per minute (seem).
2. A method for etching as recited in claim 1, further comprising:
flowing the N2 gas at a flow rate of between about 10 and about 100 standard cubic centimeters per minute (seem).
3. A method for etching as recited in claim 2, wherein the dielectric layer is one of a doped and undoped dielectric material that is selected from the group consisting of a silicon dioxide (SiO2) layer, a borophosphosilicate glass (BPSG) layer, a phosphosilicate glass (PSG), a tetra-ethyl-otho-silicate (TEOS).
28
4. A method for etching as recited in claim 3, further comprising:
flowing an argon (Ar) gas having a flow rate of between about 0 and 400 standard cubic centimeters per minute (seem) into the plasma processing chamber.
5. A method for etching as recited in claim 4, wherein a chamber pressure within said plasma processing chamber is between about 15 mTorr and about 100 mTorr during the etching.
6. A method for etching as recited in claim 4, wherein a chamber temperature within the plasma processing chamber is between about 10 degrees Celsius and about 50 degrees Celsius.
7. In a plasma processing chamber, a method for improving a selectivity of a dielectric layer to a photoresist layer and to a base layer, wherein the photoresist layer is coated over the dielectric layer, comprising:
introducing an etchant source gas into the plasma processing chamber, the etchant gas consists essentially of a CxFy gas and an N2 gas;
striking a plasma in the plasma processing chamber from the etchant source gas;
etching at least a portion of the dielectric layer with the plasma through to the base layer that underlies the dielectric layer; and
selecting one of the following gas flow rates: flowing the C2F6 gas at a flow rate of between about 2 and about 20 standard cubic centimeters per minute (seem); flowing the C4Fg gas at a flow rate of between about 2 and about 15 standard cubic centimeters per
29 minute (seem); and flowing the C3F6 gas at a flow rate of between about 2 and about 15 standard cubic centimeters per minute (seem).
8. A method for etching as recited in claim 7, further comprising:
flowing the N2 gas at a flow rate of between about 10 and about 100 standard cubic centimeters per minute (seem).
9. The method for improving a selectivity of a dielectric layer to a photoresist layer and to a base layer as recited in claim 8, further comprising:
flowing an argon (Ar) gas having a flow rate of between about 0 and 400 standard cubic centimeters per minute (seem) into the plasma processing chamber.
10. The method for improving a selectivity of a dielectric layer to a photoresist layer and to a base layer as recited in claim 9, further comprising:
producing an etch ratio selectivity of at least about (7:1) for the dielectric layer to the photoresist layer.
11. The method for improving a selectivity of a dielectric layer to a photoresist layer and to a base layer as recited in claim 10, wherein the base layer that underlies the dielectric layer is selected from the group consisting of a titanium-silicide (TSi2) layer, a titanium-nitride (TiN) layer, a tungsten-silicide (WSi2) layer, a silicon layer, a polysilicon layer, a silicon-nitride (Si3N4) layer, and an aluminum/copper (Al/Cu) layer.
30
12. The method for improving a selectivity of a dielectric layer to a photoresist layer and to a base layer as recited in claim 11 , wherein the plasma further improves a selectivity of the dielectric to the base layer.
13. The method for improving a selectivity of a dielectric layer to a photoresist layer and to a base layer as recited in claim 12, further comprising one of the following operations:
producing an etch ratio selectivity of at least about (40:1) for the dielectric layer to the titanium-silicide layer;
producing an etch ratio selectivity of at least about (40: 1) for the dielectric layer to the tungsten-silicide layer;
producing an etch ratio selectivity of at least about (50:1) for the dielectric layer to the silicon layer;
producing an etch ratio selectivity of at least about (50:1) for the dielectric layer to the polysilicon layer;
producing an etch ratio selectivity of at least about (20: 1) for the dielectric layer to the silicon-nitride layer; and
producing an etch ratio selectivity of at least about (50:1) for the dielectric layer to the aluminum/copper layer.
14. The method for improving a selectivity of a dielectric layer to a photoresist layer and to a base layer as recited in claim 13, wherein holes selected form the group
31 consisting of via holes and contact holes are defined through the dielectric layer without excessively removing the photoresist layer or the base layer.
15. In a plasma processing chamber, a method for improving a selectivity of a dielectric layer to a photoresist layer and a base layer, wherein the photoresist layer is coated over the dielectric layer, comprising:
introducing an etchant source gas into the plasma processing chamber, the etchant gas being selected from a group consisting of a C2F6 gas, a C4F8 gas, or a C3F6 gas, and an N2 gas and an Ar gas;
striking a plasma in the plasma processing chamber from the etchant source gas;
etching a high aspect ratio via hole through the dielectric layer with the plasma down to the base layer that underlies the dielectric layer; and
selecting one of the following gas flow rates: flowing the C2F6 gas at a flow rate of between about 2 and about 20 standard cubic centimeters per minute (seem); flowing the C4F8 gas at a flow rate of between about 2 and about 15 standard cubic centimeters per minute (seem); and flowing the C3F6 gas at a flow rate of between about 2 and about 15 standard cubic centimeters per minute (seem).
16. The method for improving a selectivity of a dielectric layer to a photoresist layer and a base layer as recited in claim 15, further comprising:
producing an etch ratio selectivity of at least about (7:1) for the dielectric layer to the photoresist layer.
32
17. The method for improving a selectivity of a dielectric layer to a photoresist layer and a base layer as recited in claim 16, further comprising:
flowing the N2 gas at a flow rate of between about 10 and about 100 standard cubic centimeters per minute (seem).
18. The method for improving a selectivity of a dielectric layer to a photoresist layer and a base layer as recited in claim 17, further comprising:
flowing the argon (Ar) gas to a flow rate of between about 0 and 400 standard cubic centimeters per minute (seem) into the plasma processing chamber.
33
PCT/US1998/017607 1997-08-28 1998-08-25 Method for selective plasma etch WO1999010923A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP98944527A EP1012877A1 (en) 1997-08-28 1998-08-25 Method for selective plasma etch
KR1020007002106A KR100563969B1 (en) 1997-08-28 1998-08-25 Method for selective plasma etch
JP2000508137A JP2001514447A (en) 1997-08-28 1998-08-25 Method for selective plasma etching

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/919,659 US6090304A (en) 1997-08-28 1997-08-28 Methods for selective plasma etch
US08/919,659 1997-08-28

Publications (2)

Publication Number Publication Date
WO1999010923A1 WO1999010923A1 (en) 1999-03-04
WO1999010923B1 true WO1999010923B1 (en) 1999-05-14

Family

ID=25442429

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1998/017607 WO1999010923A1 (en) 1997-08-28 1998-08-25 Method for selective plasma etch

Country Status (6)

Country Link
US (1) US6090304A (en)
EP (1) EP1012877A1 (en)
JP (1) JP2001514447A (en)
KR (1) KR100563969B1 (en)
TW (1) TW538479B (en)
WO (1) WO1999010923A1 (en)

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Also Published As

Publication number Publication date
WO1999010923A1 (en) 1999-03-04
JP2001514447A (en) 2001-09-11
KR100563969B1 (en) 2006-03-29
KR20010023462A (en) 2001-03-26
EP1012877A1 (en) 2000-06-28
TW538479B (en) 2003-06-21
US6090304A (en) 2000-07-18

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