WO1999031732A3 - Semiconductor processing method and field effect transistor - Google Patents
Semiconductor processing method and field effect transistor Download PDFInfo
- Publication number
- WO1999031732A3 WO1999031732A3 PCT/US1998/027109 US9827109W WO9931732A3 WO 1999031732 A3 WO1999031732 A3 WO 1999031732A3 US 9827109 W US9827109 W US 9827109W WO 9931732 A3 WO9931732 A3 WO 9931732A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gate
- chlorine
- fluorine
- oxide layer
- proximate
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000003672 processing method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 7
- 229910052801 chlorine Inorganic materials 0.000 abstract 7
- 239000000460 chlorine Substances 0.000 abstract 7
- 125000006850 spacer group Chemical group 0.000 abstract 7
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 6
- 229910052731 fluorine Inorganic materials 0.000 abstract 6
- 239000011737 fluorine Substances 0.000 abstract 6
- 239000000463 material Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/512—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being parallel to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31629—Deposition of halogen doped silicon oxide, e.g. fluorine doped silicon oxide
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000539530A JP2002509361A (en) | 1997-12-18 | 1998-12-18 | Semiconductor manufacturing method and field effect transistor |
AU19331/99A AU1933199A (en) | 1997-12-18 | 1998-12-18 | Semiconductor processing method and field effect transistor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US99366397A | 1997-12-18 | 1997-12-18 | |
US08/993,663 | 1997-12-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1999031732A2 WO1999031732A2 (en) | 1999-06-24 |
WO1999031732A3 true WO1999031732A3 (en) | 1999-07-29 |
Family
ID=25539806
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1998/027109 WO1999031732A2 (en) | 1997-12-18 | 1998-12-18 | Semiconductor processing method and field effect transistor |
Country Status (5)
Country | Link |
---|---|
US (3) | US6593196B2 (en) |
JP (1) | JP2002509361A (en) |
KR (1) | KR100389899B1 (en) |
AU (1) | AU1933199A (en) |
WO (1) | WO1999031732A2 (en) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3687776B2 (en) * | 1999-12-14 | 2005-08-24 | 旭化成マイクロシステム株式会社 | Manufacturing method of semiconductor device |
US7247919B1 (en) | 2000-08-25 | 2007-07-24 | Micron Technology, Inc. | Method and device to reduce gate-induced drain leakage (GIDL) current in thin gate oxides MOSFETs |
KR100383083B1 (en) * | 2000-09-05 | 2003-05-12 | 아남반도체 주식회사 | Flash memory having low operation voltage and manufacturing method thereof |
JP2003204063A (en) | 2002-01-10 | 2003-07-18 | Toshiba Corp | Semiconductor device and its manufacturing method |
US6544853B1 (en) * | 2002-01-18 | 2003-04-08 | Infineon Technologies Ag | Reduction of negative bias temperature instability using fluorine implantation |
US6825133B2 (en) * | 2003-01-22 | 2004-11-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Use of fluorine implantation to form a charge balanced nitrided gate dielectric layer |
US6780730B2 (en) * | 2002-01-31 | 2004-08-24 | Infineon Technologies Ag | Reduction of negative bias temperature instability in narrow width PMOS using F2 implantation |
US6825684B1 (en) | 2002-06-10 | 2004-11-30 | Advanced Micro Devices, Inc. | Hot carrier oxide qualification method |
US6856160B1 (en) | 2002-06-10 | 2005-02-15 | Advanced Micro Devices, Inc. | Maximum VCC calculation method for hot carrier qualification |
JP2004022575A (en) | 2002-06-12 | 2004-01-22 | Sanyo Electric Co Ltd | Semiconductor device |
KR100464852B1 (en) * | 2002-08-07 | 2005-01-05 | 삼성전자주식회사 | Method of forming gate oxide layer in semiconductor device |
JP3851896B2 (en) * | 2002-09-27 | 2006-11-29 | 株式会社東芝 | Manufacturing method of semiconductor device |
KR100483438B1 (en) * | 2002-12-09 | 2005-04-14 | 삼성전자주식회사 | a method of forming cell of non-volatile memory |
DE102004044667A1 (en) * | 2004-09-15 | 2006-03-16 | Infineon Technologies Ag | Semiconductor component and associated production method |
US20060105530A1 (en) * | 2004-11-12 | 2006-05-18 | Nanya Technology Corporation | Method for fabricating semiconductor device |
EP3925997A3 (en) | 2005-04-22 | 2022-04-20 | Mitsubishi Chemical Corporation | Biomass-resource-derived polyester and production process thereof |
KR100678477B1 (en) * | 2005-06-15 | 2007-02-02 | 삼성전자주식회사 | Nanocrystal nonvolatile memory devices and method of fabricating the same |
US20080135953A1 (en) * | 2006-12-07 | 2008-06-12 | Infineon Technologies Ag | Noise reduction in semiconductor devices |
WO2008136225A1 (en) * | 2007-04-27 | 2008-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Soi substrate and manufacturing method of the same, and semiconductor device |
JP2008283051A (en) * | 2007-05-11 | 2008-11-20 | Toshiba Corp | Semiconductor storage device and manufacturing method of semiconductor storage device |
US8674434B2 (en) * | 2008-03-24 | 2014-03-18 | Micron Technology, Inc. | Impact ionization devices |
US9490368B2 (en) * | 2010-05-20 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
US8828834B2 (en) | 2012-06-12 | 2014-09-09 | Globalfoundries Inc. | Methods of tailoring work function of semiconductor devices with high-k/metal layer gate structures by performing a fluorine implant process |
US8975143B2 (en) * | 2013-04-29 | 2015-03-10 | Freescale Semiconductor, Inc. | Selective gate oxide properties adjustment using fluorine |
US9263270B2 (en) | 2013-06-06 | 2016-02-16 | Globalfoundries Inc. | Method of forming a semiconductor device structure employing fluorine doping and according semiconductor device structure |
CN104979391B (en) * | 2014-04-08 | 2019-04-23 | 联华电子股份有限公司 | Semiconductor element and preparation method thereof |
WO2018125154A1 (en) * | 2016-12-29 | 2018-07-05 | Intel Corporation | End of line parasitic capacitance improvement using implants |
US11075283B2 (en) * | 2018-10-30 | 2021-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dielectric constant reduction of gate spacer |
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JPH0462974A (en) * | 1990-06-30 | 1992-02-27 | Fuji Xerox Co Ltd | Mos field-effect transistor and manufacture thereof |
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US5506178A (en) * | 1992-12-25 | 1996-04-09 | Sony Corporation | Process for forming gate silicon oxide film for MOS transistors |
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US5672525A (en) * | 1996-05-23 | 1997-09-30 | Chartered Semiconductor Manufacturing Pte Ltd. | Polysilicon gate reoxidation in a gas mixture of oxygen and nitrogen trifluoride gas by rapid thermal processing to improve hot carrier immunity |
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-
1998
- 1998-12-18 JP JP2000539530A patent/JP2002509361A/en active Pending
- 1998-12-18 AU AU19331/99A patent/AU1933199A/en not_active Abandoned
- 1998-12-18 WO PCT/US1998/027109 patent/WO1999031732A2/en active IP Right Grant
- 1998-12-18 KR KR10-2000-7006697A patent/KR100389899B1/en not_active IP Right Cessation
-
1999
- 1999-04-23 US US09/332,255 patent/US6593196B2/en not_active Expired - Lifetime
-
2000
- 2000-08-21 US US09/648,008 patent/US6288433B1/en not_active Expired - Lifetime
-
2005
- 2005-08-31 US US11/217,561 patent/US7189623B2/en not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01272161A (en) * | 1987-07-14 | 1989-10-31 | Oki Electric Ind Co Ltd | Manufacture of mos type fet |
JPH0462974A (en) * | 1990-06-30 | 1992-02-27 | Fuji Xerox Co Ltd | Mos field-effect transistor and manufacture thereof |
DE4229574A1 (en) * | 1991-09-05 | 1993-03-11 | Mitsubishi Electric Corp | FET with good current control even at low gate voltage - comprises principal surface and source and drain zones spaced apart on semiconductor substrate and nitride- and oxide-films on principal surface |
US5506178A (en) * | 1992-12-25 | 1996-04-09 | Sony Corporation | Process for forming gate silicon oxide film for MOS transistors |
US5516707A (en) * | 1995-06-12 | 1996-05-14 | Vlsi Technology, Inc. | Large-tilted-angle nitrogen implant into dielectric regions overlaying source/drain regions of a transistor |
US5672525A (en) * | 1996-05-23 | 1997-09-30 | Chartered Semiconductor Manufacturing Pte Ltd. | Polysilicon gate reoxidation in a gas mixture of oxygen and nitrogen trifluoride gas by rapid thermal processing to improve hot carrier immunity |
Non-Patent Citations (2)
Title |
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PATENT ABSTRACTS OF JAPAN vol. 014, no. 038 (E - 878) 24 January 1990 (1990-01-24) * |
PATENT ABSTRACTS OF JAPAN vol. 016, no. 271 (E - 1218) 18 June 1992 (1992-06-18) * |
Also Published As
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KR100389899B1 (en) | 2003-07-04 |
KR20010033261A (en) | 2001-04-25 |
US7189623B2 (en) | 2007-03-13 |
US20030017689A1 (en) | 2003-01-23 |
US6288433B1 (en) | 2001-09-11 |
WO1999031732A2 (en) | 1999-06-24 |
JP2002509361A (en) | 2002-03-26 |
AU1933199A (en) | 1999-07-05 |
US20060001054A1 (en) | 2006-01-05 |
US6593196B2 (en) | 2003-07-15 |
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