WO1999033094A1 - Selective silicon oxide etchant formulation including fluoride salt, chelating agent and glycol solvent - Google Patents
Selective silicon oxide etchant formulation including fluoride salt, chelating agent and glycol solvent Download PDFInfo
- Publication number
- WO1999033094A1 WO1999033094A1 PCT/US1998/026989 US9826989W WO9933094A1 WO 1999033094 A1 WO1999033094 A1 WO 1999033094A1 US 9826989 W US9826989 W US 9826989W WO 9933094 A1 WO9933094 A1 WO 9933094A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- fluoride
- formulation
- group
- acid
- chemical formulation
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
Definitions
- a glycol solvent (71 -98%; preferably 90-98%), and
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE69833692T DE69833692T2 (en) | 1997-12-19 | 1998-12-16 | ACID SOLUTION FOR THE SELECTIVE SEEDING OF SILICON OXIDE WITH FLUORIDE SALT, COMPLEX AND GLYCOL SOLVENT |
KR1020007006817A KR100607530B1 (en) | 1997-12-19 | 1998-12-16 | Selective silicon oxide etchant formulation including fluoride salt, chelating agent and glycol solvent |
JP2000525910A JP2001527286A (en) | 1997-12-19 | 1998-12-16 | Selective silicon oxide etchant formulation comprising fluoride salt, chelating agent, and glycol solvent |
EP98964096A EP1062682B1 (en) | 1997-12-19 | 1998-12-16 | Selective silicon oxide etchant formulation including fluoride salt, chelating agent and glycol solvent |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US6833997P | 1997-12-19 | 1997-12-19 | |
US60/068,339 | 1997-12-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999033094A1 true WO1999033094A1 (en) | 1999-07-01 |
Family
ID=22081929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1998/026989 WO1999033094A1 (en) | 1997-12-19 | 1998-12-16 | Selective silicon oxide etchant formulation including fluoride salt, chelating agent and glycol solvent |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1062682B1 (en) |
JP (1) | JP2001527286A (en) |
KR (1) | KR100607530B1 (en) |
AT (1) | ATE319186T1 (en) |
DE (1) | DE69833692T2 (en) |
TW (1) | TW579386B (en) |
WO (1) | WO1999033094A1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1080170A1 (en) * | 1998-05-19 | 2001-03-07 | Arch Specialty Chemicals, Inc. | Cleaning composition and method for removing residues |
EP1680806A2 (en) * | 2003-10-28 | 2006-07-19 | Sachem, Inc. | Cleaning solutions and etchants and methods for using same |
WO2007140193A1 (en) * | 2006-05-25 | 2007-12-06 | Honeywell International Inc. | Selective tantalum carbide etchant, methods of production and uses thereof |
US8512587B2 (en) | 2006-02-23 | 2013-08-20 | Micron Technology, Inc. | Highly selective doped oxide etchant |
CN112410036A (en) * | 2020-10-29 | 2021-02-26 | 湖北兴福电子材料有限公司 | Low-selectivity etching solution for BPSG (boron-doped barium SG) and PETEOS (polyethylene terephthalate-ethylene-oxide-styrene) thin films |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG188848A1 (en) * | 2008-03-07 | 2013-04-30 | Advanced Tech Materials | Non-selective oxide etch wet clean composition and method of use |
KR101296797B1 (en) * | 2010-03-24 | 2013-08-14 | 구수진 | Recovery Method of High-purified poly Silicon from a waste solar wafer |
KR102111056B1 (en) * | 2014-03-28 | 2020-05-14 | 동우 화인켐 주식회사 | Non-aquaneous etching composition for silicon-based compound layer |
TWI686461B (en) * | 2019-02-01 | 2020-03-01 | 才將科技股份有限公司 | A silicon etchant with high si/sio etching selectivity and its application |
WO2023176642A1 (en) * | 2022-03-14 | 2023-09-21 | 日本化薬株式会社 | Treatment liquid and method for using same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3979241A (en) * | 1968-12-28 | 1976-09-07 | Fujitsu Ltd. | Method of etching films of silicon nitride and silicon dioxide |
US4921572A (en) * | 1989-05-04 | 1990-05-01 | Olin Corporation | Etchant solutions containing hydrogen fluoride and a polyammonium fluoride salt |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4568540A (en) * | 1984-04-18 | 1986-02-04 | Johnson & Johnson | Oral hygiene compositions |
SU1737024A1 (en) * | 1990-01-02 | 1992-05-30 | Новочеркасский Политехнический Институт Им.Серго Орджоникидзе | Electrolyte for bright nickel plating |
US5320709A (en) * | 1993-02-24 | 1994-06-14 | Advanced Chemical Systems International Incorporated | Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution |
US5421906A (en) * | 1993-04-05 | 1995-06-06 | Enclean Environmental Services Group, Inc. | Methods for removal of contaminants from surfaces |
US5571447A (en) * | 1995-03-20 | 1996-11-05 | Ashland Inc. | Stripping and cleaning composition |
US5698503A (en) * | 1996-11-08 | 1997-12-16 | Ashland Inc. | Stripping and cleaning composition |
-
1998
- 1998-12-16 JP JP2000525910A patent/JP2001527286A/en active Pending
- 1998-12-16 WO PCT/US1998/026989 patent/WO1999033094A1/en active IP Right Grant
- 1998-12-16 DE DE69833692T patent/DE69833692T2/en not_active Expired - Lifetime
- 1998-12-16 KR KR1020007006817A patent/KR100607530B1/en not_active IP Right Cessation
- 1998-12-16 AT AT98964096T patent/ATE319186T1/en not_active IP Right Cessation
- 1998-12-16 EP EP98964096A patent/EP1062682B1/en not_active Expired - Lifetime
- 1998-12-19 TW TW087121277A patent/TW579386B/en not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3979241A (en) * | 1968-12-28 | 1976-09-07 | Fujitsu Ltd. | Method of etching films of silicon nitride and silicon dioxide |
US4921572A (en) * | 1989-05-04 | 1990-05-01 | Olin Corporation | Etchant solutions containing hydrogen fluoride and a polyammonium fluoride salt |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1080170A1 (en) * | 1998-05-19 | 2001-03-07 | Arch Specialty Chemicals, Inc. | Cleaning composition and method for removing residues |
EP1080170A4 (en) * | 1998-05-19 | 2001-10-24 | Arch Spec Chem Inc | Cleaning composition and method for removing residues |
EP1680806A2 (en) * | 2003-10-28 | 2006-07-19 | Sachem, Inc. | Cleaning solutions and etchants and methods for using same |
EP1680806A4 (en) * | 2003-10-28 | 2008-07-30 | Sachem Inc | Cleaning solutions and etchants and methods for using same |
US8512587B2 (en) | 2006-02-23 | 2013-08-20 | Micron Technology, Inc. | Highly selective doped oxide etchant |
WO2007140193A1 (en) * | 2006-05-25 | 2007-12-06 | Honeywell International Inc. | Selective tantalum carbide etchant, methods of production and uses thereof |
CN112410036A (en) * | 2020-10-29 | 2021-02-26 | 湖北兴福电子材料有限公司 | Low-selectivity etching solution for BPSG (boron-doped barium SG) and PETEOS (polyethylene terephthalate-ethylene-oxide-styrene) thin films |
Also Published As
Publication number | Publication date |
---|---|
ATE319186T1 (en) | 2006-03-15 |
EP1062682A1 (en) | 2000-12-27 |
EP1062682B1 (en) | 2006-03-01 |
DE69833692D1 (en) | 2006-04-27 |
KR100607530B1 (en) | 2006-08-02 |
TW579386B (en) | 2004-03-11 |
JP2001527286A (en) | 2001-12-25 |
DE69833692T2 (en) | 2006-11-23 |
EP1062682A4 (en) | 2001-07-04 |
KR20010033352A (en) | 2001-04-25 |
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