WO1999045572A2 - Ultra-small capacitor array - Google Patents
Ultra-small capacitor array Download PDFInfo
- Publication number
- WO1999045572A2 WO1999045572A2 PCT/US1998/022778 US9822778W WO9945572A2 WO 1999045572 A2 WO1999045572 A2 WO 1999045572A2 US 9822778 W US9822778 W US 9822778W WO 9945572 A2 WO9945572 A2 WO 9945572A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- capacitor
- set forth
- conductive layer
- miniature
- dielectric
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49099—Coating resistive material on a base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49146—Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
Definitions
- a miniature capacitor device for inverted mounting to a predetermined surface.
- the device comprises a substrate, such as silicon, glass or Al 2 0 3 .
- a first conductive layer is disposed on the substrate.
- the first conductive layer defines at least one first capacitor plate and a first terminal structure adjacent thereto.
- a dielectric layer is disposed on the first capacitor plate.
- a second conductive layer defines at least one second capacitor plate and a second terminal structure adjacent thereto.
- the second capacitor plate is disposed on the dielectric layer in opposition to the first capacitor plate. It will often be desirable to also provide an encapsulate material disposed over layers on the substrate. The encapsulate material is defined to expose the first and second terminal structures .
- the dielectric material may preferably have a dielectric constant of at least about 100. Often, the dielectric constant may exceed 500, with a dielectric constant of 1100 being utilized in some exemplary embodiments.
- the dielectric material may comprises a lead-based dielectric material such as a PZT material. Such a dielectric layer may have a thickness of no greater than approximately 1.0 ⁇ m .
- the first conductive layer may comprise at least three first capacitor plates. In this case, the second conductive layer comprises at least three second capacitor plates respectively opposed thereto. The second conductive layer may further define a respective second terminal structure disposed adjacent to each of the second capacitor plates .
- a miniature capacitor array having a plurality of capacitor devices in a single package.
- the device comprises a substrate having a first conductive layer disposed thereon.
- the first conductive layer defines a plurality of first capacitor plates.
- a dielectric layer is disposed on the plurality of first capacitor plates.
- a second conductive layer defines a plurality of second capacitor plates disposed on the dielectric layer in opposition to respective of the first capacitor plates.
- the second conductive layer further defines respective terminal structures adjacent to each of the second capacitor plates. It will often be desirable to provide an encapsulate material disposed over layers on the substrate.
- the encapsulate material is defined to expose the terminal structures.
- the first conductive layer may comprise at least three first capacitor plates.
- the second conductive layer may comprise at least three second capacitor plates respectively opposed thereto.
- the top surface of the substrate has an area of no greater than approximately 2750 square mils.
- Each of the capacitor devices may be advantageously located between a respective pair of terminal structures.
- the capacitor devices may have a relatively large capacitance value.
- an electronic device comprising at least one thin film capacitor arranged on a substrate.
- the capacitor of the electronic device has a capacitance of approximately equal to or greater than 14 nanofarad/mil 2 .
- the thin film capacitor is located between terminals configured for connection of the electronic device to external circuitry.
- the capacitor may have a dielectric layer with a thickness of no greater than approximately 1.0 ⁇ m.
- the dielectric layer may have a thickness of approximately 0.8 to 1.0 ⁇ m.
- a PZT dielectric material applied by a sol-gel process may be utilized.
- a method of manufacturing a thin film capacitor array involves providing a generally planar substrate.
- a first conductive layer is applied to the substrate and formed so as to define a plurality of first capacitor plates.
- a dielectric layer is then applied to cover the first capacitor plates of the first conductive layer.
- a second conductive layer is applied to define a plurality of second capacitor plates opposed to respective of the first capacitor plates.
- An encapsulate material may also be applied over the layers on the substrate.
- Figure 1 is a side elevation of an ultra-small capacitor array of the present invention as mounted to a printed circuit board;
- Figure 2 is a plan view of the ultra-small capacitor array of Figure 1 as taken along line 2- 2;
- Figure 6 is a cross-sectional view as taken along line 6-6 of Figure 2;
- Figures 8A through 8D illustrate successive steps in the manufacture of a first alternative capacitor array
- Figures 9A through 9D illustrate successive steps in the manufacture of a second alternative capacitor array
- Figure 10 is a schematic diagram of the circuit provided by the capacitor array produced as shown in Figures 9A through 9D.
- FIG. 1 illustrates a miniature capacitor device 10 of the present invention surface mounted to a printed circuit board 12.
- device 10 is inverted so that terminal structures on its "top” are electrically connected to circuit traces of the circuit board 12. This electrical connection is typically supplied by solder bumps 14, which also function to maintain device 10 in its physical location on the board.
- capacitor device 10 is configured in the illustrated embodiment as an integrated array having a plurality of individual capacitors.
- device 10 has three individual capacitors 16a, 16b and 16c.
- One plate of each capacitor is electrically connected to an associated terminal 18a, 18b, and 18c of a first polarity.
- a second plate of each capacitor is electrically connected to a common ground terminal 20.
- the equivalent circuit formed by the illustrated arrangement is depicted schematically in Figure 3.
- capacitors 16a, 16b and 16c are formed as thin film capacitors having a pair of opposed capacitor plates separated by a predetermined dielectric.
- Presently preferred embodiments utilize a high-K dielectric to achieve a relatively large capacitance value in a small package.
- a dielectric material exhibiting a dielectric constant of approximately 100 or more.
- a dielectric constant of greater than approximately 500 will often be preferred, with a dielectric constant of approximately 1100 being used in some exemplary embodiments.
- Lower conductive layer 24 is located on the top surface of a suitable substrate 24, such as silicon, glass or Al 2 0 3 . Particularly where a PZT dielectric is utilized, conductive layer 24 may be constructed having a metallic layer 28 of a highly conductive metal and an oxide layer 30 of a material adapted to collect oxygen vacancies in the dielectric.
- a suitable oxide material that may be utilized for this purpose is lanthanum strontium cobalt oxide (LSCO) .
- Dielectric layer 32 is located above lower conductive layer 24, at least in regions where upper capacitor plates 22a, 22b and 22c will be applied. As noted above, terminals 18a, 18b and
- a conductive layer 34 formed in the same manner as the upper capacitor plates and their associated terminals, may be optionally located on lower conductive layer 24 at ground terminal 20.
- the various layers located on substrate 26 may be protected by a suitable encapsulate.
- the encapsulate may comprise a primary passivation layer 36 of SiN or the like.
- a secondary passivation layer 38 of a suitable polymer material may also be provided.
- One such polymer material that may be utilized for this purpose is benzocyclobutene (BCB) .
- BCB benzocyclobutene
- FIGS 7A through 7E illustrate various steps employed in the manufacture of device 10.
- substrate 26 is illustrated prior to the application of any layers. It will be appreciated that the length and width of device 10 will generally be defined by the size of substrate 26.
- lower conductive layer 24 is applied to the top surface of substrate 26.
- lower conductive layer 24 may be a layer of platinum metallization that has been patterned according to conventional processing techniques.
- Figure 7C illustrates dielectric layer 32 applied to cover a selected portion of lower conductive layer 24.
- dielectric layer 32 is preferably a lead-based dielectric having a relatively high dielectric constant.
- the dielectric is applied by a sol-gel coating process and subsequently patterned as desired.
- a sol-gel process that applies relatively thick coating cycles is particularly preferred to achieve a given layer thickness with a fewer coats.
- a 1 , 3 -propanediol-based PZT solution synthesis may be utilized to apply PZT films having a thickness of 0.4-0.5 ⁇ m per spin casting cycle.
- only two coats may be necessary to achieve desired thickness levels of about 0.8-1.0 ⁇ m. This is in comparison with many conventional sol -gel techniques which may only achieve a thickness of about 0. l ⁇ m with each coating cycle.
- a more detailed description of a sol-gel coating process that may be utilized herein is given in Liu et al . , "Thick Layer Deposition of Lead Perovskites Using Diol -Based Chemical Solution Approach," Integrated Ferroelectrics, 1997, Vol. 18, pp. 263-274, incorporated herein by reference.
- the various layers formed on substrate 26 are then encapsulated as shown in Figure 7E .
- the encapsulate material is patterned, such as by etching, to expose the terminal structures.
- the use of a dielectric having a high dielectric constant in devices of the present invention allows a large capacitance to be achieved in a small plate area (X times Y) .
- exemplary embodiments of the invention may exhibit a capacitance of about 14 nanofarad/mil 2 or more.
- each capacitor of device 10 may have a plate area of about 175 mil 2 or less.
- the plate area (X times Y) of each capacitor may be only about 100 mil 2 while having a capacitance value of 560 picofarads or more .
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU12026/99A AU1202699A (en) | 1998-03-04 | 1998-10-27 | Ultra-small capacitor array |
JP2000535031A JP2002506283A (en) | 1998-03-04 | 1998-10-27 | Ultra-small capacitor array |
EP98955151A EP1060503A2 (en) | 1998-03-04 | 1998-10-27 | Ultra-small capacitor array |
KR1020007009762A KR20010041574A (en) | 1998-03-04 | 1998-10-27 | Ultla-small capacitor array |
NO20004348A NO20004348L (en) | 1998-03-04 | 2000-09-01 | Ultralite capacitor group |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/034,754 | 1998-03-04 | ||
US09/034,754 US6324048B1 (en) | 1998-03-04 | 1998-03-04 | Ultra-small capacitor array |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1999045572A2 true WO1999045572A2 (en) | 1999-09-10 |
WO1999045572A3 WO1999045572A3 (en) | 2000-06-22 |
Family
ID=21878383
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1998/022778 WO1999045572A2 (en) | 1998-03-04 | 1998-10-27 | Ultra-small capacitor array |
Country Status (8)
Country | Link |
---|---|
US (3) | US6324048B1 (en) |
EP (1) | EP1060503A2 (en) |
JP (1) | JP2002506283A (en) |
KR (1) | KR20010041574A (en) |
CN (1) | CN1301392A (en) |
AU (1) | AU1202699A (en) |
NO (1) | NO20004348L (en) |
WO (1) | WO1999045572A2 (en) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7301748B2 (en) | 1997-04-08 | 2007-11-27 | Anthony Anthony A | Universal energy conditioning interposer with circuit architecture |
US7336468B2 (en) | 1997-04-08 | 2008-02-26 | X2Y Attenuators, Llc | Arrangement for energy conditioning |
US9054094B2 (en) | 1997-04-08 | 2015-06-09 | X2Y Attenuators, Llc | Energy conditioning circuit arrangement for integrated circuit |
US7321485B2 (en) | 1997-04-08 | 2008-01-22 | X2Y Attenuators, Llc | Arrangement for energy conditioning |
US6965165B2 (en) | 1998-12-21 | 2005-11-15 | Mou-Shiung Lin | Top layers of metal for high performance IC's |
JP3386029B2 (en) * | 2000-02-09 | 2003-03-10 | 日本電気株式会社 | Flip chip type semiconductor device and manufacturing method thereof |
US6515842B1 (en) | 2000-03-30 | 2003-02-04 | Avx Corporation | Multiple array and method of making a multiple array |
US20020171530A1 (en) * | 2000-03-30 | 2002-11-21 | Victor Company Of Japan, Limited | Production method of thin film passive element formed on printed circuit board and thin film passive element produced by the method |
JP2002252143A (en) * | 2000-12-21 | 2002-09-06 | Alps Electric Co Ltd | Temperature compensating thin-film capacitor and electronic apparatus |
AU2002305531B2 (en) * | 2001-05-10 | 2006-12-07 | Microcoating Technologies, Inc. | Capacitor having improved electrodes |
US7573698B2 (en) * | 2002-10-03 | 2009-08-11 | Avx Corporation | Window via capacitors |
US7016175B2 (en) * | 2002-10-03 | 2006-03-21 | Avx Corporation | Window via capacitor |
US6819543B2 (en) * | 2002-12-31 | 2004-11-16 | Intel Corporation | Multilayer capacitor with multiple plates per layer |
US6785118B1 (en) | 2003-03-31 | 2004-08-31 | Intel Corporation | Multiple electrode capacitor |
US6950300B2 (en) * | 2003-05-06 | 2005-09-27 | Marvell World Trade Ltd. | Ultra low inductance multi layer ceramic capacitor |
JP4093188B2 (en) * | 2003-05-27 | 2008-06-04 | 株式会社村田製作所 | Multilayer ceramic electronic component and its mounting structure and mounting method |
US7177135B2 (en) * | 2003-09-23 | 2007-02-13 | Samsung Electronics Co., Ltd. | On-chip bypass capacitor and method of manufacturing the same |
US7675729B2 (en) | 2003-12-22 | 2010-03-09 | X2Y Attenuators, Llc | Internally shielded energy conditioner |
KR100980056B1 (en) * | 2003-12-24 | 2010-09-03 | 주식회사 하이닉스반도체 | non-symmetrical capacitor pattern array |
TWI251706B (en) * | 2003-12-26 | 2006-03-21 | Display Optronics Corp M | Storage capacitor having light scattering function and manufacturing process of the same |
JP2008535207A (en) | 2005-03-01 | 2008-08-28 | エックストゥーワイ アテニュエイターズ,エルエルシー | Regulator with coplanar conductor |
WO2006093831A2 (en) | 2005-03-01 | 2006-09-08 | X2Y Attenuators, Llc | Energy conditioner with tied through electrodes |
US20060202250A1 (en) * | 2005-03-10 | 2006-09-14 | Thomas Hecht | Storage capacitor, array of storage capacitors and memory cell array |
US7548407B2 (en) * | 2005-09-12 | 2009-06-16 | Qualcomm Incorporated | Capacitor structure |
CN101395683A (en) | 2006-03-07 | 2009-03-25 | X2Y衰减器有限公司 | Energy conditioner structures |
US7687882B2 (en) * | 2006-04-14 | 2010-03-30 | Allegro Microsystems, Inc. | Methods and apparatus for integrated circuit having multiple dies with at least one on chip capacitor |
US7573112B2 (en) * | 2006-04-14 | 2009-08-11 | Allegro Microsystems, Inc. | Methods and apparatus for sensor having capacitor on chip |
US20080013298A1 (en) | 2006-07-14 | 2008-01-17 | Nirmal Sharma | Methods and apparatus for passive attachment of components for integrated circuits |
US7280343B1 (en) | 2006-10-31 | 2007-10-09 | Avx Corporation | Low profile electrolytic capacitor assembly |
US8093670B2 (en) | 2008-07-24 | 2012-01-10 | Allegro Microsystems, Inc. | Methods and apparatus for integrated circuit having on chip capacitor with eddy current reductions |
US9450556B2 (en) * | 2009-10-16 | 2016-09-20 | Avx Corporation | Thin film surface mount components |
US8699204B2 (en) * | 2010-02-23 | 2014-04-15 | Avx Corporation | Element array and footprint layout for element array |
US8629539B2 (en) | 2012-01-16 | 2014-01-14 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having non-conductive die paddle |
US10234513B2 (en) | 2012-03-20 | 2019-03-19 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
US9494660B2 (en) | 2012-03-20 | 2016-11-15 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
US9666788B2 (en) | 2012-03-20 | 2017-05-30 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
US9812588B2 (en) | 2012-03-20 | 2017-11-07 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
WO2014127236A1 (en) | 2013-02-14 | 2014-08-21 | Kemet Electronics Corporation | One-sided capacitor foils and methods of making one-sided capacitor foils |
US9411025B2 (en) | 2013-04-26 | 2016-08-09 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame and a magnet |
US10411498B2 (en) | 2015-10-21 | 2019-09-10 | Allegro Microsystems, Llc | Apparatus and methods for extending sensor integrated circuit operation through a power disturbance |
US9991331B2 (en) * | 2016-09-26 | 2018-06-05 | Micron Technology, Inc. | Apparatuses and methods for semiconductor circuit layout |
US10978897B2 (en) | 2018-04-02 | 2021-04-13 | Allegro Microsystems, Llc | Systems and methods for suppressing undesirable voltage supply artifacts |
US10991644B2 (en) | 2019-08-22 | 2021-04-27 | Allegro Microsystems, Llc | Integrated circuit package having a low profile |
WO2021221087A1 (en) * | 2020-05-01 | 2021-11-04 | 株式会社村田製作所 | Semiconductor device and module |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3600652A (en) * | 1969-01-24 | 1971-08-17 | Allen Bradley Co | Electrical capacitor |
US3821617A (en) * | 1973-06-18 | 1974-06-28 | Rca Corp | Film type capacitor and method of adjustment |
JPH07263277A (en) * | 1994-03-22 | 1995-10-13 | Mitsubishi Materials Corp | Capacitor array and its manufacture |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3273033A (en) | 1963-08-29 | 1966-09-13 | Litton Systems Inc | Multidielectric thin film capacitors |
US3268744A (en) | 1964-04-16 | 1966-08-23 | Ibm | High capacitance microelectronic decoupling device with low shunt resistance at high frequencies |
US3778689A (en) | 1972-05-22 | 1973-12-11 | Hewlett Packard Co | Thin film capacitors and method for manufacture |
US4251326A (en) | 1978-12-28 | 1981-02-17 | Western Electric Company, Inc. | Fabricating an RC network utilizing alpha tantalum |
US4410867A (en) | 1978-12-28 | 1983-10-18 | Western Electric Company, Inc. | Alpha tantalum thin film circuit device |
US4439813A (en) | 1981-07-21 | 1984-03-27 | Ibm Corporation | Thin film discrete decoupling capacitor |
US4471405A (en) * | 1981-12-28 | 1984-09-11 | International Business Machines Corporation | Thin film capacitor with a dual bottom electrode structure |
US4971924A (en) | 1985-05-01 | 1990-11-20 | Texas Instruments Incorporated | Metal plate capacitor and method for making the same |
US4821085A (en) | 1985-05-01 | 1989-04-11 | Texas Instruments Incorporated | VLSI local interconnect structure |
US4801469A (en) | 1986-08-07 | 1989-01-31 | The United States Of America As Represented By The Department Of Energy | Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors |
US5108941A (en) | 1986-12-05 | 1992-04-28 | Texas Instrument Incorporated | Method of making metal-to-polysilicon capacitor |
US4946710A (en) * | 1987-06-02 | 1990-08-07 | National Semiconductor Corporation | Method for preparing PLZT, PZT and PLT sol-gels and fabricating ferroelectric thin films |
US4788524A (en) | 1987-08-27 | 1988-11-29 | Gte Communication Systems Corporation | Thick film material system |
US4933208A (en) | 1987-11-16 | 1990-06-12 | Motorola, Inc. | Multilayer thermoplastic substrate and method of manufacture |
US5079670A (en) | 1988-05-03 | 1992-01-07 | Texas Instruments Incorporated | Metal plate capacitor and method for making the same |
US5420745A (en) | 1991-09-30 | 1995-05-30 | Matsushita Electric Industrial Co., Ltd. | Surface-mount type ceramic capacitor |
US5206788A (en) * | 1991-12-12 | 1993-04-27 | Ramtron Corporation | Series ferroelectric capacitor structure for monolithic integrated circuits and method |
US5442585A (en) * | 1992-09-11 | 1995-08-15 | Kabushiki Kaisha Toshiba | Device having dielectric thin film |
US5390072A (en) * | 1992-09-17 | 1995-02-14 | Research Foundation Of State University Of New York | Thin film capacitors |
US5288660A (en) | 1993-02-01 | 1994-02-22 | Avantek, Inc. | Method for forming self-aligned t-shaped transistor electrode |
US5370766A (en) | 1993-08-16 | 1994-12-06 | California Micro Devices | Methods for fabrication of thin film inductors, inductor networks and integration with other passive and active devices |
JPH0766325A (en) | 1993-08-26 | 1995-03-10 | Rohm Co Ltd | Structure of synthetic resin package type electronic component |
US5457598A (en) | 1994-04-08 | 1995-10-10 | Radford; Kenneth C. | High capacitance thin film capacitor |
JPH07283077A (en) | 1994-04-11 | 1995-10-27 | Ngk Spark Plug Co Ltd | Thin film capacitor |
US5569880A (en) | 1994-12-02 | 1996-10-29 | Avx Corporation | Surface mountable electronic component and method of making same |
US5625529A (en) | 1995-03-28 | 1997-04-29 | Samsung Electronics Co., Ltd. | PZT thin films for ferroelectric capacitor and method for preparing the same |
US5822175A (en) | 1995-04-13 | 1998-10-13 | Matsushita Electronics Corporation | Encapsulated capacitor structure having a dielectric interlayer |
US5880925A (en) * | 1997-06-27 | 1999-03-09 | Avx Corporation | Surface mount multilayer capacitor |
-
1998
- 1998-03-04 US US09/034,754 patent/US6324048B1/en not_active Expired - Fee Related
- 1998-10-27 JP JP2000535031A patent/JP2002506283A/en active Pending
- 1998-10-27 AU AU12026/99A patent/AU1202699A/en not_active Abandoned
- 1998-10-27 EP EP98955151A patent/EP1060503A2/en not_active Withdrawn
- 1998-10-27 CN CN98813967A patent/CN1301392A/en active Pending
- 1998-10-27 KR KR1020007009762A patent/KR20010041574A/en not_active Application Discontinuation
- 1998-10-27 WO PCT/US1998/022778 patent/WO1999045572A2/en not_active Application Discontinuation
-
2000
- 2000-01-06 US US09/478,569 patent/US6519132B1/en not_active Expired - Fee Related
- 2000-09-01 NO NO20004348A patent/NO20004348L/en not_active Application Discontinuation
-
2002
- 2002-05-08 US US10/141,369 patent/US6832420B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3600652A (en) * | 1969-01-24 | 1971-08-17 | Allen Bradley Co | Electrical capacitor |
US3821617A (en) * | 1973-06-18 | 1974-06-28 | Rca Corp | Film type capacitor and method of adjustment |
JPH07263277A (en) * | 1994-03-22 | 1995-10-13 | Mitsubishi Materials Corp | Capacitor array and its manufacture |
Also Published As
Publication number | Publication date |
---|---|
NO20004348D0 (en) | 2000-09-01 |
EP1060503A2 (en) | 2000-12-20 |
WO1999045572A3 (en) | 2000-06-22 |
US6324048B1 (en) | 2001-11-27 |
US20020126438A1 (en) | 2002-09-12 |
US6832420B2 (en) | 2004-12-21 |
KR20010041574A (en) | 2001-05-25 |
CN1301392A (en) | 2001-06-27 |
US6519132B1 (en) | 2003-02-11 |
AU1202699A (en) | 1999-09-20 |
JP2002506283A (en) | 2002-02-26 |
NO20004348L (en) | 2000-10-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6324048B1 (en) | Ultra-small capacitor array | |
US6285542B1 (en) | Ultra-small resistor-capacitor thin film network for inverted mounting to a surface | |
US7405921B2 (en) | Layer capacitor element and production process as well as electronic device | |
US6515842B1 (en) | Multiple array and method of making a multiple array | |
US7263764B2 (en) | Method for adjusting performance characteristics of a multilayer component | |
US5478773A (en) | Method of making an electronic device having an integrated inductor | |
US7939909B2 (en) | Device having inductors and capacitors | |
EP1895588A2 (en) | Capacitor built-in interposer and method of manufacturing the same and electronic component device | |
EP1275136A2 (en) | Multilayered capacitor structure with alternately connected concentric lines for deep submicron cmos | |
US7026680B2 (en) | Thin film capacitive element, method for producing same and electronic device | |
US20020084456A1 (en) | Multilayered wiring board and production method thereof | |
CN1084050C (en) | Electronic component comprising thin-film structure with passive elements | |
US6525922B2 (en) | High performance via capacitor and method for manufacturing same | |
US20030161081A1 (en) | Electronic microcomponent including a capacitive structure, and process for producing it | |
WO2007029445A1 (en) | Capacitor-equipped semiconductor device | |
US5914526A (en) | Semiconductor device | |
JP3720540B2 (en) | Thin film capacitor | |
EP1061570A1 (en) | Semiconductor device | |
CZ20003211A3 (en) | Miniature capacitor field | |
CN117457395A (en) | Thin film chip resistor-capacitor and its manufacturing method | |
JP3645808B2 (en) | Thin-film electronic component, its manufacturing method and substrate | |
JP2002164258A (en) | Thin-film capacitor and capacitor substrate | |
JP3987702B2 (en) | Thin film capacitor | |
JP2000252151A (en) | Capacitor | |
JP2003045746A (en) | Thin film capacitor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 98813967.7 Country of ref document: CN |
|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GD GE GH GM HR HU ID IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG UZ VN YU ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW SD SZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
AK | Designated states |
Kind code of ref document: A3 Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GD GE GH GM HR HU ID IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG UZ VN YU ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A3 Designated state(s): GH GM KE LS MW SD SZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12026/99 Country of ref document: AU |
|
ENP | Entry into the national phase |
Ref document number: 2000 535031 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: PV2000-3211 Country of ref document: CZ Ref document number: 1020007009762 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1998955151 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1998955151 Country of ref document: EP |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
WWP | Wipo information: published in national office |
Ref document number: 1020007009762 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: PV2000-3211 Country of ref document: CZ |
|
NENP | Non-entry into the national phase |
Ref country code: CA |
|
WWR | Wipo information: refused in national office |
Ref document number: PV2000-3211 Country of ref document: CZ |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 1020007009762 Country of ref document: KR |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 1998955151 Country of ref document: EP |