WO1999057747A1 - Cvd apparatus and process for depositing titanium films - Google Patents
Cvd apparatus and process for depositing titanium films Download PDFInfo
- Publication number
- WO1999057747A1 WO1999057747A1 PCT/US1999/009391 US9909391W WO9957747A1 WO 1999057747 A1 WO1999057747 A1 WO 1999057747A1 US 9909391 W US9909391 W US 9909391W WO 9957747 A1 WO9957747 A1 WO 9957747A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gas
- process chamber
- flow
- die
- plasma
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45576—Coaxial inlets for each gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99918911A EP1088330A1 (en) | 1998-05-01 | 1999-04-29 | Cvd apparatus and process for depositing titanium films |
JP2000547641A JP2002513863A (en) | 1998-05-01 | 1999-04-29 | CVD apparatus and method for titanium film deposition |
KR1020007012164A KR20010043225A (en) | 1998-05-01 | 1999-04-29 | Cvd apparatus and process for depositing titanium films |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/071,514 US6294466B1 (en) | 1998-05-01 | 1998-05-01 | HDP-CVD apparatus and process for depositing titanium films for semiconductor devices |
US09/071,514 | 1998-05-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999057747A1 true WO1999057747A1 (en) | 1999-11-11 |
Family
ID=22101816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/009391 WO1999057747A1 (en) | 1998-05-01 | 1999-04-29 | Cvd apparatus and process for depositing titanium films |
Country Status (5)
Country | Link |
---|---|
US (1) | US6294466B1 (en) |
EP (1) | EP1088330A1 (en) |
JP (1) | JP2002513863A (en) |
KR (1) | KR20010043225A (en) |
WO (1) | WO1999057747A1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1227172A2 (en) * | 2001-01-26 | 2002-07-31 | Applied Materials, Inc. | Method of reducing plasma charge damage for plasma processes |
WO2003016591A1 (en) * | 2001-08-16 | 2003-02-27 | Applied Materials, Inc. | Process chamber having multiple gas distributors and method |
US6829056B1 (en) | 2003-08-21 | 2004-12-07 | Michael Barnes | Monitoring dimensions of features at different locations in the processing of substrates |
US8025731B2 (en) | 1998-12-30 | 2011-09-27 | Lam Research Corporation | Gas injection system for plasma processing |
US9051647B2 (en) | 2001-10-15 | 2015-06-09 | Lam Research Corporation | Tunable multi-zone gas injection system |
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---|---|---|---|---|
US6136703A (en) * | 1998-09-03 | 2000-10-24 | Micron Technology, Inc. | Methods for forming phosphorus- and/or boron-containing silica layers on substrates |
US6541371B1 (en) | 1999-02-08 | 2003-04-01 | Novellus Systems, Inc. | Apparatus and method for depositing superior Ta(N)/copper thin films for barrier and seed applications in semiconductor processing |
US6291341B1 (en) * | 1999-02-12 | 2001-09-18 | Micron Technology, Inc. | Method for PECVD deposition of selected material films |
US6444556B2 (en) * | 1999-04-22 | 2002-09-03 | Micron Technology, Inc. | Chemistry for chemical vapor deposition of titanium containing films |
JP2004533118A (en) * | 2001-05-30 | 2004-10-28 | エーエスエム アメリカ インコーポレイテッド | Low temperature loading and unloading and baking |
US6503824B1 (en) * | 2001-10-12 | 2003-01-07 | Mosel Vitelic, Inc. | Forming conductive layers on insulators by physical vapor deposition |
US6606802B2 (en) * | 2001-11-30 | 2003-08-19 | Micron Technology Inc. | Cleaning efficiency improvement in a high density plasma process chamber using thermally hot gas |
DE10163394A1 (en) * | 2001-12-21 | 2003-07-03 | Aixtron Ag | Method and device for depositing crystalline layers and on crystalline substrates |
GB0217553D0 (en) * | 2002-07-30 | 2002-09-11 | Sheel David W | Titania coatings by CVD at atmospheric pressure |
US20040135828A1 (en) * | 2003-01-15 | 2004-07-15 | Schmitt Stephen E. | Printer and method for printing an item with a high durability and/or resolution image |
JP4361747B2 (en) * | 2003-03-04 | 2009-11-11 | 東京エレクトロン株式会社 | Thin film formation method |
US7510624B2 (en) * | 2004-12-17 | 2009-03-31 | Applied Materials, Inc. | Self-cooling gas delivery apparatus under high vacuum for high density plasma applications |
DE102005056322A1 (en) * | 2005-11-25 | 2007-06-06 | Aixtron Ag | Apparatus for depositing a film on a substrate, especially for semiconductor production, comprises a process chamber that contains a substrate holder and is supplied with process gases through coaxial inlet ports |
KR100794661B1 (en) * | 2006-08-18 | 2008-01-14 | 삼성전자주식회사 | Substrate treatment apparatus and method |
US7789965B2 (en) | 2006-09-19 | 2010-09-07 | Asm Japan K.K. | Method of cleaning UV irradiation chamber |
JP5211503B2 (en) * | 2007-02-16 | 2013-06-12 | 富士通セミコンダクター株式会社 | Manufacturing method of semiconductor device |
US20080289650A1 (en) * | 2007-05-24 | 2008-11-27 | Asm America, Inc. | Low-temperature cleaning of native oxide |
US8135485B2 (en) * | 2007-09-28 | 2012-03-13 | Lam Research Corporation | Offset correction techniques for positioning substrates within a processing chamber |
US7871937B2 (en) | 2008-05-16 | 2011-01-18 | Asm America, Inc. | Process and apparatus for treating wafers |
US20110265951A1 (en) * | 2010-04-30 | 2011-11-03 | Applied Materials, Inc. | Twin chamber processing system |
US20110265884A1 (en) * | 2010-04-30 | 2011-11-03 | Applied Materials, Inc. | Twin chamber processing system with shared vacuum pump |
US9330936B2 (en) | 2013-11-09 | 2016-05-03 | Tokyo Electron Limited | Method for depositing metal layers on germanium-containing films using metal chloride precursors |
US10957561B2 (en) * | 2015-07-30 | 2021-03-23 | Lam Research Corporation | Gas delivery system |
US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
US20220307129A1 (en) * | 2021-03-23 | 2022-09-29 | Applied Materials, Inc. | Cleaning assemblies for substrate processing chambers |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0087151A2 (en) * | 1982-02-23 | 1983-08-31 | Siemens Aktiengesellschaft | Process for producing layers of refractory metals or metallic compounds by chemical vapour deposition |
JPS6389668A (en) * | 1986-10-03 | 1988-04-20 | Hitachi Electronics Eng Co Ltd | Vapor phase reaction apparatus and method for controlling said apparatus |
JPH0225568A (en) * | 1988-07-15 | 1990-01-29 | Hitachi Ltd | Method for filling micropore with metal |
JPH05175130A (en) * | 1991-12-20 | 1993-07-13 | Nippon Steel Corp | Plasma cvd apparatus |
JPH09102471A (en) * | 1995-10-05 | 1997-04-15 | Sony Corp | Plasma generation source as well as apparatus and method for plasma cvd |
US5648175A (en) * | 1996-02-14 | 1997-07-15 | Applied Materials, Inc. | Chemical vapor deposition reactor system and integrated circuit |
EP0883166A2 (en) * | 1997-06-03 | 1998-12-09 | Applied Materials, Inc. | Deposition of fluorinated silicon glass |
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JP3360098B2 (en) | 1995-04-20 | 2002-12-24 | 東京エレクトロン株式会社 | Shower head structure of processing equipment |
US5834371A (en) * | 1997-01-31 | 1998-11-10 | Tokyo Electron Limited | Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof |
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1998
- 1998-05-01 US US09/071,514 patent/US6294466B1/en not_active Expired - Fee Related
-
1999
- 1999-04-29 WO PCT/US1999/009391 patent/WO1999057747A1/en not_active Application Discontinuation
- 1999-04-29 EP EP99918911A patent/EP1088330A1/en not_active Withdrawn
- 1999-04-29 JP JP2000547641A patent/JP2002513863A/en not_active Withdrawn
- 1999-04-29 KR KR1020007012164A patent/KR20010043225A/en not_active Application Discontinuation
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JPH0225568A (en) * | 1988-07-15 | 1990-01-29 | Hitachi Ltd | Method for filling micropore with metal |
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EP0883166A2 (en) * | 1997-06-03 | 1998-12-09 | Applied Materials, Inc. | Deposition of fluorinated silicon glass |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8025731B2 (en) | 1998-12-30 | 2011-09-27 | Lam Research Corporation | Gas injection system for plasma processing |
EP1227172A2 (en) * | 2001-01-26 | 2002-07-31 | Applied Materials, Inc. | Method of reducing plasma charge damage for plasma processes |
EP1227172A3 (en) * | 2001-01-26 | 2002-11-27 | Applied Materials, Inc. | Method of reducing plasma charge damage for plasma processes |
US6660662B2 (en) | 2001-01-26 | 2003-12-09 | Applied Materials, Inc. | Method of reducing plasma charge damage for plasma processes |
US7036453B2 (en) | 2001-01-26 | 2006-05-02 | Applied Materials, Inc. | Apparatus for reducing plasma charge damage for plasma processes |
WO2003016591A1 (en) * | 2001-08-16 | 2003-02-27 | Applied Materials, Inc. | Process chamber having multiple gas distributors and method |
US6676760B2 (en) | 2001-08-16 | 2004-01-13 | Appiled Materials, Inc. | Process chamber having multiple gas distributors and method |
US9051647B2 (en) | 2001-10-15 | 2015-06-09 | Lam Research Corporation | Tunable multi-zone gas injection system |
US10403475B2 (en) | 2001-10-15 | 2019-09-03 | Lam Research Corporation | Tunable multi-zone gas injection system |
US6829056B1 (en) | 2003-08-21 | 2004-12-07 | Michael Barnes | Monitoring dimensions of features at different locations in the processing of substrates |
Also Published As
Publication number | Publication date |
---|---|
US6294466B1 (en) | 2001-09-25 |
JP2002513863A (en) | 2002-05-14 |
KR20010043225A (en) | 2001-05-25 |
EP1088330A1 (en) | 2001-04-04 |
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