WO2000000674A3 - Process for growth of defect free silicon crystals of arbitrarily large diameters - Google Patents

Process for growth of defect free silicon crystals of arbitrarily large diameters Download PDF

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Publication number
WO2000000674A3
WO2000000674A3 PCT/US1999/014285 US9914285W WO0000674A3 WO 2000000674 A3 WO2000000674 A3 WO 2000000674A3 US 9914285 W US9914285 W US 9914285W WO 0000674 A3 WO0000674 A3 WO 0000674A3
Authority
WO
WIPO (PCT)
Prior art keywords
ingot
defect free
growth
large diameters
free silicon
Prior art date
Application number
PCT/US1999/014285
Other languages
French (fr)
Other versions
WO2000000674A2 (en
WO2000000674A9 (en
Inventor
Robert J Falster
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Priority to EP99930652A priority Critical patent/EP1090166B1/en
Priority to DE69901115T priority patent/DE69901115T2/en
Priority to JP2000557021A priority patent/JP2003517412A/en
Priority to KR1020007010278A priority patent/KR20010041957A/en
Publication of WO2000000674A2 publication Critical patent/WO2000000674A2/en
Publication of WO2000000674A9 publication Critical patent/WO2000000674A9/en
Publication of WO2000000674A3 publication Critical patent/WO2000000674A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/106—Seed pulling including sealing means details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Abstract

A process for growing single crystal silicon ingots which are substantially free of agglomerated intrinsic point defects. An ingot is grown generally in accordance with the Czochralski method. No portion of the ingot cools to a temperature which is less than a temperature TA at which agglomeration of intrinsic point defects in the ingot occurs during the time the ingot is being grown. The achievement of defect free ingots is thus substantially decoupled from process parameters, such as pull rate, and system parameters, such as axial temperature gradient in the ingot.
PCT/US1999/014285 1998-06-26 1999-06-25 Process for growth of defect free silicon crystals of arbitrarily large diameters WO2000000674A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP99930652A EP1090166B1 (en) 1998-06-26 1999-06-25 Process for growth of defect free silicon crystals of arbitrarily large diameters
DE69901115T DE69901115T2 (en) 1998-06-26 1999-06-25 METHOD FOR PRODUCING ERROR-FREE SILICON CRYSTALS OF AN arbitrary LARGE DIAMETER
JP2000557021A JP2003517412A (en) 1998-06-26 1999-06-25 Method for growing defect-free silicon crystals with arbitrarily large diameter
KR1020007010278A KR20010041957A (en) 1998-06-26 1999-06-25 Process for growth of defect free silicon crystals of arbitrarily large diameters

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US9072398P 1998-06-26 1998-06-26
US60/090,723 1998-06-26
US10408798P 1998-10-14 1998-10-14
US60/104,087 1998-10-14
US11762399P 1999-01-28 1999-01-28
US60/117,623 1999-01-28

Publications (3)

Publication Number Publication Date
WO2000000674A2 WO2000000674A2 (en) 2000-01-06
WO2000000674A9 WO2000000674A9 (en) 2000-03-30
WO2000000674A3 true WO2000000674A3 (en) 2002-10-10

Family

ID=27376642

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/014285 WO2000000674A2 (en) 1998-06-26 1999-06-25 Process for growth of defect free silicon crystals of arbitrarily large diameters

Country Status (8)

Country Link
US (3) US6328795B2 (en)
EP (1) EP1090166B1 (en)
JP (1) JP2003517412A (en)
KR (1) KR20010041957A (en)
CN (1) CN1326518A (en)
DE (1) DE69901115T2 (en)
TW (1) TW473564B (en)
WO (1) WO2000000674A2 (en)

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Also Published As

Publication number Publication date
US20040003770A1 (en) 2004-01-08
JP2003517412A (en) 2003-05-27
US20010008114A1 (en) 2001-07-19
DE69901115D1 (en) 2002-05-02
US6562123B2 (en) 2003-05-13
KR20010041957A (en) 2001-05-25
WO2000000674A2 (en) 2000-01-06
US20020092460A1 (en) 2002-07-18
EP1090166A1 (en) 2001-04-11
TW473564B (en) 2002-01-21
WO2000000674A9 (en) 2000-03-30
DE69901115T2 (en) 2002-12-19
US6913647B2 (en) 2005-07-05
US6328795B2 (en) 2001-12-11
CN1326518A (en) 2001-12-12
EP1090166B1 (en) 2002-03-27

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