WO2000001011A1 - Isotropically etching sidewall spacers to be used for both an nmos source/drain implant and a pmos ldd implant - Google Patents

Isotropically etching sidewall spacers to be used for both an nmos source/drain implant and a pmos ldd implant Download PDF

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Publication number
WO2000001011A1
WO2000001011A1 PCT/US1999/003135 US9903135W WO0001011A1 WO 2000001011 A1 WO2000001011 A1 WO 2000001011A1 US 9903135 W US9903135 W US 9903135W WO 0001011 A1 WO0001011 A1 WO 0001011A1
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Prior art keywords
sidewall spacers
active area
pairs
pair
sidewall
Prior art date
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PCT/US1999/003135
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French (fr)
Inventor
Jon D. Cheek
Derick J. Wristers
Anthony J. Toprac
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Advanced Micro Devices, Inc.
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Publication of WO2000001011A1 publication Critical patent/WO2000001011A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823864—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's

Definitions

  • This invention relates to integrated circuit fabrication and, more particularly, to isotropically etching sidewall spacers formed upon the opposed sidewall surfaces of a pair of CMOS (one NMOS and one PMOS) gate conductors to reduce the lateral thickness of each spacer.
  • the sidewall spacers are isotropically etched after performing a source/drain implant self-aligned to the pair of sidewall spacers arranged upon the NMOS gate conductor so that they may also be used to perform an LDD implant self-aligned to the pair of sidewall spacers arranged upon the PMOS gate conductor.
  • MOSFETs are manufactured by placing an undoped polycrystalline ("polysilicon") material over a relatively thin gate oxide. The polysilicon material is then patterned to form a gate conductor directly above a channel region of the substrate. A dopant species is implanted into the gate conductor and regions of the substrate exclusive of the channel region, thereby forming source and drain regions (i.e., junctions) adjacent to and on opposite sides of the channel region. If the dopant species used for forming the source and drain regions is n-type, then the resulting MOSFET is an undoped polycrystalline (“polysilicon”) material over a relatively thin gate oxide. The polysilicon material is then patterned to form a gate conductor directly above a channel region of the substrate. A dopant species is implanted into the gate conductor and regions of the substrate exclusive of the channel region, thereby forming source and drain regions (i.e., junctions) adjacent to and on opposite sides of the channel region. If the dopant species used for forming the source and drain regions is
  • NMOSFET NMOSFET
  • PMOSFET p-channel transistor device.
  • CMOS complementary metal-oxide-semiconductor
  • CMOS complementary metal-oxide-semiconductor
  • CMOS complementary metal-oxide-semiconductor
  • SCE short- channel effects
  • Leff ' effective channel length
  • SCE impacts device operation by, inter alia, reducing device threshold voltages and increasing sub-threshold currents.
  • Leff becomes quite small, the depletion regions associated with the source and drain areas within the junctions may extend toward one another and substantially occupy the channel area. Henceforth, some of the channel will be partially depleted without any influence of gate voltage. As a result, less gate charge is required to invert the channel of a transistor having a short Leff.
  • Somewhat related to threshold voltage lowering is the concept of sub-threshold current flow. Even at times when the gate voltage is below the threshold value, current between the source and drain nonetheless exists for transistors having a relatively short Leff.
  • One method in which to control SCE is to increase the dopant concentration within the body of the device. Unfortunately, increasing dopant within the body deleteriously increases potential gradients in the device.
  • HCE hot carrier effects
  • LDD lightly doped drain
  • the purpose of the LDD is to absorb some of the potential into the drain and thus reduce Em.
  • a conventional LDD structure is one in which a light concentration of dopant is self-aligned to the gate conductor followed by a heavier concentration of dopant self-aligned to the gate conductor on which a pair of sidewall spacers has been formed.
  • the purpose of the first implant dose is to produce lightly doped sections within an active area of the substrate near the channel.
  • the second implant dose is spaced from the channel by a distance substantially equivalent to the thickness of each sidewall spacer.
  • the second implant dose forms heavily doped source and drain regions within the active area laterally outside the LDD areas. In this manner, the lateral thickness of each sidewall spacer dictates the length of each LDD area.
  • P-type dopant species e.g., boron
  • the p-type dopant species easily diffuse through interstitial and vacancy positions within the substrate to other sections of the substrate in response to being heated during subsequent processing steps.
  • the source and drain regions may eventually extend completely to the gate conductor while the LDD areas may extend partially underneath the gate conductor.
  • the lateral migration of dopant species into the channel region reduces the Leff of the transistor, and thus may lead to detrimental SCE and HCE.
  • Figs. 1-4 illustrate a conventional sequence of processing steps which may be used to form a CMOS circuit in which the LDD areas of a PMOS transistor are laterally offset from the sidewalls surfaces of a corresponding gate conductor.
  • Fig. 1 depicts a partial cross-sectional view of a single crystalline silicon substrate 10 which is slightly doped with n-type dopant species. Shallow trench isolation structures 14 laterally isolate active areas 6 and 8 of substrate 10. A p-type well 12 resides within an upper portion of active area 6 between a pair of isolation structures 14. A pair of gate conductors 22 are spaced above separate active areas of substrate 10 by a gate dielectric 20.
  • sidewall spacers 24a, 24b, and 24c may be formed laterally adjacent the opposed sidewall surfaces of each gate conductor 22.
  • Sidewall spacers 24a and 24c are typically composed of a dielectric, i.e., silicon dioxide, which is dissimilar to the dielectric, i.e., silicon nitride, from which sidewall spacers 24b are made.
  • each of the sidewall spacers 24a, 24b, and 24c may be selectively etched without removing the adjacent spacer.
  • a masking layer 26 may be formed upon active area 6 and the sidewall spacers and the gate conductor 22 residing above active area 6. Subsequent to forming masking layer 26, a p + source/drain implant self-aligned to the exposed lateral edges of sidewall spacers 24a is forwarded into the unmasked areas of substrate 10 to from source and drain regions 28.
  • sidewall spacers 24c are removed from sidewall spacers 24b using an etch technique which is highly selective to silicon dioxide ("oxide") relative to silicon nitride (“nitride”).
  • Another masking layer 30 is formed upon active area 8 and the structures overlying the active area, as shown in Fig. 2.
  • n * source/drain implant self-aligned to the exposed lateral edges of sidewall spacers 24b is performed to form source and drain regions 32 within well 12. Absent sidewall spacers 24c, source and drain regions 32 are placed such that they are closer to the adjacent gate conductor 22 than are source and drain regions 28.
  • masking layer 30 is removed from active area 8
  • sidewall spacers 24b are removed from sidewall spacers 24a using an etch technique which exhibits a high etch selectivity ratio of nitride to oxide.
  • a p ' LDD implant is performed. In this manner, LDD areas 36 are formed within active area 8 laterally aligned to the exposed lateral edges of sidewall spacers 24a, immediately adjacent to source and drain regions 28.
  • sidewall spacers 24a and masking layer 34 may then be removed, followed by the formation of a masking layer 38 upon active area 8 and the overlying gate conductor 22.
  • An n " LDD implant which is self-aligned to the opposed sidewall surfaces of the unmasked gate conductor 22 is forwarded into well 12 to form LDD areas 40.
  • An NMOS transistor 42 and a PMOS transistor 44 are thusly placed upon and within substrate 10.
  • source and drain regions 28 and LDD areas 36 of PMOS transistor 46 may include high-diffusing dopant species, initially placing them a spaced distance from gate conductor 22 reduces the possibility that they might migrate laterally underneath the gate conductor.
  • first and second pairs of sidewall spacers are concurrently formed upon the opposed sidewall surfaces of respective first and second gate conductors.
  • the first and second gate conductors are spaced laterally apart upon isolated first and second active areas of a semiconductor substrate, respectively.
  • a single set of sidewall spacer pairs are used as masking structures during the formation of source and drain regions of an NMOS transistor and LDD areas of a PMOS transistor.
  • the n + source/drain (“S D") implant is self-aligned to the outer lateral edge of the first pair of sidewall spacers prior to reducing the lateral thicknesses of the sidewall spacers.
  • SUBSTITUTE SHEET (RULE 21) implant is self-aligned to the outer lateral edge of the second pair of sidewall spacers after the spacer thicknesses have been reduced. Therefore, multiple pairs of sidewall spacers need not be formed laterally adjacent the sidewall surfaces of the gate conductors to vary the spacing between the implant regions and the gate conductors of the ensuing integrated circuit.
  • an n ' LDD implant which is self-aligned to the opposed sidewall surfaces of the first gate conductor is forwarded into the first active area. As such, the LDD areas of the PMOS transistor are displaced from the corresponding gate conductor while the LDD areas of the NMOS transistor are positioned immediately adjacent the corresponding gate conductor.
  • third and fourth pairs of sidewall spacers are formed laterally extending from the first and second pairs of sidewall spacers, respectively.
  • a p + S/D implant is then self-aligned to the exposed lateral edges of the fourth pair of sidewall spacers, thereby forming source and drain regions within the second active area.
  • the combined lateral thickness of adjacent first and third spacers is substantially greater than the original lateral thickness of each individual third spacer. Accordingly, the source and drain regions of the PMOS transistor are laterally spaced from the second gate conductor by a distance that is substantially greater than the distance by which the source and drain regions of the NMOS transistor are spaced from the first gate conductor.
  • CMOS transistor in which the PMOS junctions are displaced from their corresponding gate conductor by a greater distance than the NMOS junctions are displaced from their corresponding gate conductor.
  • only two pairs of sidewall spacers are formed upon the sidewall surfaces of each gate conductor.
  • the deposition time and anisotropic etch time required to form a third spacer is eliminated.
  • a semiconductor substrate which includes a first active area laterally isolated from a second active area by an isolation structure.
  • a first gate conductor and a second gate conductor have been patterned laterally spaced apart upon respective first and second active areas.
  • the first and second gate conductors are spaced above the substrate by a gate dielectric and are laterally bounded by respective first and second opposed sidewall surfaces.
  • a first masking layer is formed upon the second active area and the second gate conductor, followed by forwarding an n " LDD implant self-aligned to the first opposed sidewall surfaces into the first active area.
  • the first masking layer is removed, and the first and second pairs of sidewall spacers are then formed laterally extending from the respective first and second opposed sidewall surfaces.
  • the sidewall spacers comprise a dielectric, e.g., oxide or nitride.
  • a second masking layer is then patterned upon the second active area, the second pair of sidewall spacers, and the second gate conductor.
  • an n + S/D implant of n-type dopants e.g., arsenic
  • n-type dopants e.g., arsenic
  • the n + S/D implant is performed at a higher dose and energy than the n " LDD implant so that the resulting first source and drain regions contain a higher dopant concentration than the resulting first LDD areas.
  • An NMOS transistor is thus formed upon and within the first active area.
  • the first and second pairs of sidewall spacers are isotropically etched using, e.g., a plasma etch chemistry which readily removes the spacer material. In this manner, the lateral thickness of each sidewall spacer is reduced. Thereafter, a third masking layer is formed upon the first active area, the first pair of sidewall spacers, and the first gate conductor. A p " implant is then performed to incorporate p-type dopants, e.g., boron, into regions of the second active area spaced from the second gate conductor by the second pair of sidewall spacers having the reduced thicknesses.
  • p-type dopants e.g., boron
  • the third masking layer is removed so that third and fourth pairs of sidewall spacers may be formed upon the first and second pairs of sidewall spacers, respectively.
  • the third pair of sidewall spacers extend laterally from first outer edges that laterally bound the first pair of sidewall spacers to third outer edges that laterally bound the third pair of sidewall spacers.
  • the fourth pair of sidewall spacers extend laterally from second outer edges that laterally bound the second pair of sidewall spacers to fourth outer edges that laterally bound the fourth pair of sidewall spacers.
  • a p" implant performed at a higher dose and energy than the p ' implant is forwarded into second source and drain regions of the second active area.
  • the second source and drain regions are laterally spaced from the second gate conductor by the second and fourth pairs of sidewall spacers.
  • the second LDD areas of the resulting PMOS transistor are arranged within the second active area, approximately aligned between the second and fourth outer edges of the second and fourth pairs of sidewall spacers, respectively.
  • the second source and drain regions are positioned within the second active area immediately adjacent to the second LDD areas.
  • the first LDD areas of the NMOS transistor reside within the first active area, approximately aligned to the first opposed sidewall surfaces of the first gate conductor.
  • the outer lateral edges of the first LDD areas are interposed between, and laterally displaced from, the first and third outer edges of the first and third pairs of sidewall spacers, respectively.
  • the first source and drain regions are arranged within the first active area beside the first LDD areas.
  • Figs. 1-4 depict a cross-sectional view of a sequence of conventional processing steps used to form a
  • CMOS integrated circuit wherein three pairs of sidewall spacers are employed to form graded junctions of transistor devices;
  • Fig. 5 depicts a partial cross-sectional view of a semiconductor topography in which first and second gate conductors are arranged upon respective first and second active areas of a semiconductor substrate, wherein a first masking layer is formed upon the second active area and the second gate conductor;
  • Fig. 6 depicts a partial cross-sectional view of the semiconductor topography, wherein an n " LDD implant forwarded into the first active area is self-aligned to the first opposed sidewall surfaces of the first gate conductor, subsequent to the step in Fig. 5;
  • Fig. 7 depicts a partial cross-sectional view of the semiconductor topography, wherein first and second pairs of sidewall spacers are formed upon respective first and second opposed sidewall surfaces which bound the first and second gate conductors, respectively, subsequent to the step in Fig. 6;
  • Fig. 8 depicts a partial cross-sectional view of the semiconductor topography, wherein a second masking layer is formed upon the second active area, and an n + implant forwarded into the first active area is self-aligned to the exposed lateral edges of the first pair of spacers, subsequent to the step in Fig. 7;
  • Fig. 9 depicts a partial cross-sectional view of the semiconductor topography, wherein the first and second pairs of sidewall spacers are isotropically etched to reduce the lateral thickness of each spacer after removing the second masking layer from the second active area, subsequent to the step in Fig. 8;
  • Fig. 10 depicts a partial cross-sectional view of the semiconductor topography, wherein a third masking layer is formed upon the first active area, and wherein a p " LDD implant forwarded into the second active area is self-aligned to the exposed lateral edges of the second pair of sidewall spacers, subsequent to the step in Fig. 9;
  • Fig. 11 depicts a partial cross-sectional view of the semiconductor topography, wherein third and fourth pairs of sidewall spacers are formed laterally extending from respective first and second sidewall spacers, subsequent to the step in Fig. 10;
  • Fig. 12 depicts a partial cross-sectional view of a semiconductor topography, wherein a fourth masking layer is formed upon the first active area, and wherein a p * LDD implant forwarded into the second active area is self-aligned to the exposed lateral edges of the fourth pair of sidewall spacers, subsequent to the step in Fig. 11; and
  • Fig. 13 depicts a partial cross-sectional view of a semiconductor topography, wherein the fourth masking layer is removed from the first active area to complete the formation of NMOS and PMOS transistors, subsequent to the step in Fig. 12.
  • Substrate 50 preferably comprises single crystalline silicon which has been slightly doped with n-type impurities. Substrate
  • first and second active areas 46 and 48 which are isolated from each other and from other active areas within substrate 50 by well-known shallow trench isolation structures 54.
  • trench isolation structures 50 may be replaced with well-known LOCOS structures.
  • a p-type well 52 has been formed within an upper portion of first active area 46 using ion implantation of p-type species therein.
  • bulk substrate 50 may be slightly doped with p-type impurities, and an n-type well may be arranged within active area 48.
  • a pair of gate conductors 58a and 58b have been patterned a lateral spaced distance apart upon first and second active areas 46 and 48, respectively.
  • Gate conductors 58a and 58b may comprise, e.g., polysilicon which has been chemically-vapor deposited from a silane source.
  • a gate dielectric 56 comprising, e.g., oxide, is interposed between substrate 50 and each gate conductor.
  • a masking layer 60 is patterned across active area 48 and gate conductor 58b which leaves well 52 and gate conductor 58a uncovered.
  • Masking layer 60 may comprise, e.g., photoresist which is patterned using optical lithography.
  • n ' LDD implant is forwarded into areas 62 of p-type well 52 which are not masked by gate conductor 58a.
  • Appropriate n-type dopant species for the LDD implant include arsenic and phosphorus.
  • Fig. 7 illustrates the formation of first and second pairs of sidewall spacers 66a and 66b laterally extending from the opposed sidewall surfaces of respective first and second gate conductors 58a and 58b.
  • Masking layer 60 is stripped from active area 48 prior to spacer formation.
  • Sidewall spacers 66a and 66b may be formed by first depositing a spacer material, e.g., oxide or nitride, across the semiconductor topography, as indicated by dotted line 64. Thereafter, the spacer material is anisotropically etched such that ion ablation of horizontally oriented surfaces occurs at a faster rate than ion ablation of vertically oriented surfaces. The etch preferably terminates before substantial portions of substrate 50 and gate conductor 58 can be removed. Using the anisotropic etch allows the spacer material to be retained upon the sidewall surfaces of gate conductors 58a and 58b in the form of sidewall spacers 66a and 66b.
  • a spacer material e.g., oxide or nitride
  • a masking layer 68 comprising, e.g., photoresist, is then patterned upon active area 48 of substrate 50, sidewall spacers 66b, and gate conductor 58b. Thereafter, an n + S/D implant of n-type dopant species are forwarded into source and drain regions 70 of well 52 which are displaced from gate conductor 58a by a distance substantially equivalent to the lateral thickness of each sidewall spacer 66a.
  • the n * S/D implant is performed at a higher dose and energy than is the n * LDD implant.
  • Source and drain regions 70 dominate a substantial portion of the previously implanted areas 62 such that LDD areas 62 become primarily positioned beneath sidewall spacers 66a.
  • masking layer 68 is removed, and sidewall spacers 66a and 66b are concurrently isotropically etched to reduce their lateral thicknesses.
  • a plasma etch technique which exhibits a high selectivity to the spacer material relative to silicon may, for example, be used.
  • a masking layer 72 comprising, e.g., photoresist, is then patterned upon active area 46, gate conductor 58a, and sidewall spacers 66a.
  • a p " LDD implant is forwarded into areas 74 of active area which are laterally spaced from gate conductor 58b by a distance substantially equivalent to the reduced lateral thickness of each sidewall spacers 66b.
  • Appropriate p-type dopant species from the implant include boron and boron difluoride.
  • masking layer 72 is removed and third and fourth pairs of sidewall spacers 78a and 78b are formed laterally extending from respective first and second pairs of sidewall spacers 66a and 66b.
  • Formation of sidewall spacers 78a and 78b involves depositing a spacer material, e.g., oxide or nitride, across the topography, as represented by dotted line 76, followed by anisotropically etching the spacer material. Thereafter, as shown in Fig.
  • a masking layer 79 comprising, e.g., photoresist is patterned upon active area 46, gate conductor 58a, and sidewall spacers 66a and 66b.
  • a p * S/D implant is then performed to incorporate a relatively high concentration of p-type dopant species into source and drain regions 80 of active area 48 which are displaced from gate conductor 58b by a distance substantially equivalent to the combined lateral thicknesses of spacers 66b and 78b.
  • the p * S/D implant is performed at a higher dose and energy than the p ' LDD implant.
  • Fig. 13 depicts the semiconductor topography after masking layer 79 has been removed from active area 46.
  • NMOS transistor 82 and a PMOS transistor 84 result from the. sequence of steps shown in Figs. 5-13.
  • An ensuing CMOS integrated circuit employing NMOS transistor 82 and PMOS transistor 84 may be formed using well-known semiconductor fabrication techniques. 3. Industrial Applicability
  • manufacture of an integrated circuit with graded junctions can be carried out using an isotropic etch of sidewall spacers arranged on opposed sidewall surfaces of a pair of CMOS gate conductors. It will be appreciated to those skilled in the art having the benefit of this disclosure that this invention is believed to provide a method for isotropically etching pairs of sidewall spacers to reduce the lateral thickness of each sidewall spacer.
  • the pre-etch thickness of the sidewall spacers may be used as masking structures for a S/D implant of an NMOS transistor while the post-etch thickness of the spacers may be used as masking structures for an LDD implant of a PMOS transistor.

Abstract

A method is provided for isotropically etching pairs of sidewall spacers (66a, 66b, 78a, 78b) to reduce the lateral thickness of each sidewall spacer (66a, 66b, 78a, 78b). In an embodiment, first and second pairs of sidewall spacers (66a, 66b) are concurrently formed upon the opposed sidewall surfaces of respective first and second gate conductors (58a, 58b). The first and second gate conductors (58a, 58b) are spaced laterally apart upon isolated first and second active areas (46, 48) of a semiconductor substrate (50), respectively. Advantageously, a single set of sidewall spacer pairs (66a, 66b) are used as masking structures during the formation of source and drain regions (62, 74) of an NMOS transistor and LDD areas of a PMOS transistor. That is, the n+ source/drain ('S/D') implant is self-aligned to the outer lateral edge of the first pair of sidewall spacers (66a, 66b) prior to reducing the lateral thicknesses of the sidewall spacers (66a, 66b). However, the p- LDD implant is self-aligned to the outer lateral edge of the second pair of sidewall spacers (78a, 78b) after the spacer thicknesses have been reduced. Therefore, multiple pairs of sidewall spacers (66a, 66b, 78a, 78b) need not be formed laterally adjacent the sidewall surfaces of the gate conductors (58a, 58b) to vary the spacing between the implant regions (62, 74) and the gate conductors (58a, 58b) of the ensuing integrated circuit.

Description

TITLE: ISOTROPICALLY ETCHING SIDEWALL SPACERS TO BE USED FOR BOTH AN NMOS SOURCE/DRAIN IMPLANT AND A PMOS LDD IMPLANT
BACKGROUND OF THE INVENTION
1. Technical Field
This invention relates to integrated circuit fabrication and, more particularly, to isotropically etching sidewall spacers formed upon the opposed sidewall surfaces of a pair of CMOS (one NMOS and one PMOS) gate conductors to reduce the lateral thickness of each spacer. The sidewall spacers are isotropically etched after performing a source/drain implant self-aligned to the pair of sidewall spacers arranged upon the NMOS gate conductor so that they may also be used to perform an LDD implant self-aligned to the pair of sidewall spacers arranged upon the PMOS gate conductor.
2. Backround Art Fabrication of a MOSFET device is well known. Generally speaking, MOSFETs are manufactured by placing an undoped polycrystalline ("polysilicon") material over a relatively thin gate oxide. The polysilicon material is then patterned to form a gate conductor directly above a channel region of the substrate. A dopant species is implanted into the gate conductor and regions of the substrate exclusive of the channel region, thereby forming source and drain regions (i.e., junctions) adjacent to and on opposite sides of the channel region. If the dopant species used for forming the source and drain regions is n-type, then the resulting MOSFET is an
NMOSFET ("n-channel") transistor device. Conversely, if the dopant species is p-type, then the resulting MOSFET is a PMOSFET ("p-channel") transistor device. Integrated circuits utilize either n-channel devices exclusively, p-channel devices exclusively, or a combination of both (CMOS) on a single substrate. While both types of devices can be formed, the devices are distinguishable based on the dopant species used. As device dimensions continue to shrink, transistor devices become more sensitive to so-called short- channel effects ("SCE"). The distance between a source-side junction and a drain-side junction is often referred to as the physical channel length. However, after implantation and subsequent diffusion of the junctions, the actual distance between junctions becomes less than the physical channel length and is often referred to as the effective channel length ("Leff '). In VLSI designs, as the physical channel becomes small, so too must the Leff. SCE becomes a predominant problem whenever Leff drops below approximately 0.2 μm.
Generally speaking, SCE impacts device operation by, inter alia, reducing device threshold voltages and increasing sub-threshold currents. As Leff becomes quite small, the depletion regions associated with the source and drain areas within the junctions may extend toward one another and substantially occupy the channel area. Henceforth, some of the channel will be partially depleted without any influence of gate voltage. As a result, less gate charge is required to invert the channel of a transistor having a short Leff. Somewhat related to threshold voltage lowering is the concept of sub-threshold current flow. Even at times when the gate voltage is below the threshold value, current between the source and drain nonetheless exists for transistors having a relatively short Leff. One method in which to control SCE is to increase the dopant concentration within the body of the device. Unfortunately, increasing dopant within the body deleteriously increases potential gradients in the device.
l In addition to promoting SCE, reducing device dimensions may cause the lateral electric field in MOS devices to increase, giving rise to so-called hot carrier effects ("HCE"). HCE is a phenomena in which the kinetic energy of charged carriers (holes or electrons) within the channel region of a device is increased as the carriers are accelerated through large potential gradients. As a result of this increase in kinetic energy, the charged carriers are injected into the gate oxide wherein they may become trapped. The greatest potential gradient, often referred to as the maximum electric field ("Em") occurs near the drain during saturated operation. As a result of electron entrapment within the gate oxide, a net negative charge density forms in the gate oxide. The trapped charge can accumulate with time, resulting in a positive threshold shift in an NMOS transistor, or a negative threshold shift in a PMOS transistor. To overcome the problems related to SCE and HCE, an alternative drain structure known as the lightly doped drain ("LDD") is commonly used. The purpose of the LDD is to absorb some of the potential into the drain and thus reduce Em. A conventional LDD structure is one in which a light concentration of dopant is self-aligned to the gate conductor followed by a heavier concentration of dopant self-aligned to the gate conductor on which a pair of sidewall spacers has been formed. The purpose of the first implant dose is to produce lightly doped sections within an active area of the substrate near the channel. The second implant dose is spaced from the channel by a distance substantially equivalent to the thickness of each sidewall spacer. The second implant dose forms heavily doped source and drain regions within the active area laterally outside the LDD areas. In this manner, the lateral thickness of each sidewall spacer dictates the length of each LDD area.
Unfortunately, lateral migration of dopant species within both the source and drain regions and the LDD areas of a PMOS transistor can offset the benefits of having those LDD areas. P-type dopant species, e.g., boron, are typically relatively small in size. As such, the p-type dopant species easily diffuse through interstitial and vacancy positions within the substrate to other sections of the substrate in response to being heated during subsequent processing steps. As a result of dopant diffusion, the source and drain regions may eventually extend completely to the gate conductor while the LDD areas may extend partially underneath the gate conductor. The lateral migration of dopant species into the channel region reduces the Leff of the transistor, and thus may lead to detrimental SCE and HCE. Thus, it may be of benefit to unconventionally displace the PMOS LDD areas away from the gate conductor to provide protection against SCE and HCE.
Figs. 1-4 illustrate a conventional sequence of processing steps which may be used to form a CMOS circuit in which the LDD areas of a PMOS transistor are laterally offset from the sidewalls surfaces of a corresponding gate conductor. Fig. 1 depicts a partial cross-sectional view of a single crystalline silicon substrate 10 which is slightly doped with n-type dopant species. Shallow trench isolation structures 14 laterally isolate active areas 6 and 8 of substrate 10. A p-type well 12 resides within an upper portion of active area 6 between a pair of isolation structures 14. A pair of gate conductors 22 are spaced above separate active areas of substrate 10 by a gate dielectric 20. For example, three pairs of sidewall spacers 24a, 24b, and 24c may be formed laterally adjacent the opposed sidewall surfaces of each gate conductor 22. Sidewall spacers 24a and 24c are typically composed of a dielectric, i.e., silicon dioxide, which is dissimilar to the dielectric, i.e., silicon nitride, from which sidewall spacers 24b are made. As such, each of the sidewall spacers 24a, 24b, and 24c may be selectively etched without removing the adjacent spacer. As shown in Fig. 1, a masking layer 26 may be formed upon active area 6 and the sidewall spacers and the gate conductor 22 residing above active area 6. Subsequent to forming masking layer 26, a p+ source/drain implant self-aligned to the exposed lateral edges of sidewall spacers 24a is forwarded into the unmasked areas of substrate 10 to from source and drain regions 28.
After removing masking layer 26, sidewall spacers 24c are removed from sidewall spacers 24b using an etch technique which is highly selective to silicon dioxide ("oxide") relative to silicon nitride ("nitride"). Another masking layer 30 is formed upon active area 8 and the structures overlying the active area, as shown in Fig. 2.
Thereafter, an n* source/drain implant self-aligned to the exposed lateral edges of sidewall spacers 24b is performed to form source and drain regions 32 within well 12. Absent sidewall spacers 24c, source and drain regions 32 are placed such that they are closer to the adjacent gate conductor 22 than are source and drain regions 28. Subsequently, masking layer 30 is removed from active area 8, and sidewall spacers 24b are removed from sidewall spacers 24a using an etch technique which exhibits a high etch selectivity ratio of nitride to oxide. After forming a masking layer 34 upon active area 6 and the structures overlying active area 6, a p' LDD implant is performed. In this manner, LDD areas 36 are formed within active area 8 laterally aligned to the exposed lateral edges of sidewall spacers 24a, immediately adjacent to source and drain regions 28.
As shown in Fig. 4, sidewall spacers 24a and masking layer 34 may then be removed, followed by the formation of a masking layer 38 upon active area 8 and the overlying gate conductor 22. An n" LDD implant which is self-aligned to the opposed sidewall surfaces of the unmasked gate conductor 22 is forwarded into well 12 to form LDD areas 40. An NMOS transistor 42 and a PMOS transistor 44 are thusly placed upon and within substrate 10. Although source and drain regions 28 and LDD areas 36 of PMOS transistor 46 may include high-diffusing dopant species, initially placing them a spaced distance from gate conductor 22 reduces the possibility that they might migrate laterally underneath the gate conductor.
The process of forming three pairs of sidewall spacers laterally adjacent each gate conductor, sequentially removing each pair of spacers, and masking certain active areas while implanting dopants into other active areas is unfortunately very time consuming. First of all, since sidewall spacers 24a and 24c are composed of oxide while sidewall spacer 24b is composed of nitride, a separate deposition and anisotropic etch step is required for each spacer. Further, each time an implantation step is performed, one mask is removed from certain active areas while another mask is formed across other active areas. Also, since a different pair of spacers is selectively etched before each implantation step, time must be allotted for the preparation of each etch process and each implantation process. It would therefore be desirable to reduce the number of processing steps, and hence the amount of time required to form a CMOS circuit in which the junctions of the PMOS transistors are laterally spaced from adjacent gate conductors while those of the NMOS transistors are positioned immediately adjacent the gate conductors.
DISCLOSURE OF INVENTION
The problems outlined above are in large part solved by the technique hereof for isotropically etching pairs of sidewall spacers to reduce the lateral thickness of each sidewall spacer. In an embodiment, first and second pairs of sidewall spacers are concurrently formed upon the opposed sidewall surfaces of respective first and second gate conductors. The first and second gate conductors are spaced laterally apart upon isolated first and second active areas of a semiconductor substrate, respectively. Advantageously, a single set of sidewall spacer pairs are used as masking structures during the formation of source and drain regions of an NMOS transistor and LDD areas of a PMOS transistor. That is, the n+ source/drain ("S D") implant is self-aligned to the outer lateral edge of the first pair of sidewall spacers prior to reducing the lateral thicknesses of the sidewall spacers. However, the p" LDD
SUBSTITUTE SHEET (RULE 21) implant is self-aligned to the outer lateral edge of the second pair of sidewall spacers after the spacer thicknesses have been reduced. Therefore, multiple pairs of sidewall spacers need not be formed laterally adjacent the sidewall surfaces of the gate conductors to vary the spacing between the implant regions and the gate conductors of the ensuing integrated circuit. Prior to fabricating the sidewall spacers, an n' LDD implant which is self-aligned to the opposed sidewall surfaces of the first gate conductor is forwarded into the first active area. As such, the LDD areas of the PMOS transistor are displaced from the corresponding gate conductor while the LDD areas of the NMOS transistor are positioned immediately adjacent the corresponding gate conductor. Subsequent to performing the p' LDD implant, third and fourth pairs of sidewall spacers are formed laterally extending from the first and second pairs of sidewall spacers, respectively. A p+ S/D implant is then self-aligned to the exposed lateral edges of the fourth pair of sidewall spacers, thereby forming source and drain regions within the second active area. The combined lateral thickness of adjacent first and third spacers is substantially greater than the original lateral thickness of each individual third spacer. Accordingly, the source and drain regions of the PMOS transistor are laterally spaced from the second gate conductor by a distance that is substantially greater than the distance by which the source and drain regions of the NMOS transistor are spaced from the first gate conductor.
Removing the graded junctions (i.e., source and drain regions and LDD areas) of the PMOS transistor away from the second gate conductor gives the dopant species some leeway between the junctions and the channel region of the substrate beneath the gate conductor. Absent the additional spacing between the PMOS junctions and the second gate conductor, the relatively fast-diffusing p-type dopant species, e.g., boron, could inadvertently migrate into the channel region, and thus reduce the Leff of the PMOS transistor. As such, displacing the PMOS junctions from the second gate conductor lowers the risk of SCE and HCE. Advantageously, fewer steps are required to form the CMOS transistor in which the PMOS junctions are displaced from their corresponding gate conductor by a greater distance than the NMOS junctions are displaced from their corresponding gate conductor. In particular, only two pairs of sidewall spacers are formed upon the sidewall surfaces of each gate conductor. As such, the deposition time and anisotropic etch time required to form a third spacer is eliminated. Also, it is not necessary to remove one spacer from another spacer to achieve the desired junction configuration. Accordingly, less time is required to fabricate the transistor devices which are substantially resistant to HCE and SCE. Therefore, the overall throughput of the integrated circuit manufacturer is increased by reducing the lateral thicknesses of a single set of sidewall spacer pairs so that they may be used for both an n+ S D implant and a p" LDD implant. According to an embodiment, a semiconductor substrate is provided which includes a first active area laterally isolated from a second active area by an isolation structure. A first gate conductor and a second gate conductor have been patterned laterally spaced apart upon respective first and second active areas. The first and second gate conductors are spaced above the substrate by a gate dielectric and are laterally bounded by respective first and second opposed sidewall surfaces. A first masking layer is formed upon the second active area and the second gate conductor, followed by forwarding an n" LDD implant self-aligned to the first opposed sidewall surfaces into the first active area. The first masking layer is removed, and the first and second pairs of sidewall spacers are then formed laterally extending from the respective first and second opposed sidewall surfaces. Preferably the sidewall spacers comprise a dielectric, e.g., oxide or nitride. A second masking layer is then patterned upon the second active area, the second pair of sidewall spacers, and the second gate conductor. Subsequently, an n+ S/D implant of n-type dopants, e.g., arsenic, is forwarded into first source and drain regions of the first active area which are spaced from the first gate conductor by the first pair of sidewall spacers. The n+ S/D implant is performed at a higher dose and energy than the n" LDD implant so that the resulting first source and drain regions contain a higher dopant concentration than the resulting first LDD areas. An NMOS transistor is thus formed upon and within the first active area. After removing the second masking layer from the semiconductor topography, the first and second pairs of sidewall spacers are isotropically etched using, e.g., a plasma etch chemistry which readily removes the spacer material. In this manner, the lateral thickness of each sidewall spacer is reduced. Thereafter, a third masking layer is formed upon the first active area, the first pair of sidewall spacers, and the first gate conductor. A p" implant is then performed to incorporate p-type dopants, e.g., boron, into regions of the second active area spaced from the second gate conductor by the second pair of sidewall spacers having the reduced thicknesses. The third masking layer is removed so that third and fourth pairs of sidewall spacers may be formed upon the first and second pairs of sidewall spacers, respectively. As such, the third pair of sidewall spacers extend laterally from first outer edges that laterally bound the first pair of sidewall spacers to third outer edges that laterally bound the third pair of sidewall spacers. Also, the fourth pair of sidewall spacers extend laterally from second outer edges that laterally bound the second pair of sidewall spacers to fourth outer edges that laterally bound the fourth pair of sidewall spacers.
After patterning a masking layer upon the first active area, the first and third pairs of sidewall spacers, and the first gate conductor, a p" implant performed at a higher dose and energy than the p' implant is forwarded into second source and drain regions of the second active area. The second source and drain regions are laterally spaced from the second gate conductor by the second and fourth pairs of sidewall spacers. The second LDD areas of the resulting PMOS transistor are arranged within the second active area, approximately aligned between the second and fourth outer edges of the second and fourth pairs of sidewall spacers, respectively. The second source and drain regions are positioned within the second active area immediately adjacent to the second LDD areas. On the other hand, the first LDD areas of the NMOS transistor reside within the first active area, approximately aligned to the first opposed sidewall surfaces of the first gate conductor. The outer lateral edges of the first LDD areas are interposed between, and laterally displaced from, the first and third outer edges of the first and third pairs of sidewall spacers, respectively. The first source and drain regions are arranged within the first active area beside the first LDD areas.
BRIEF DESCRIPTION OF DRAWINGS Other technical advantages of the invention will become apparent upon reading the following detailed description and upon reference to the accompanying drawings in which:
Figs. 1-4 depict a cross-sectional view of a sequence of conventional processing steps used to form a
CMOS integrated circuit, wherein three pairs of sidewall spacers are employed to form graded junctions of transistor devices; Fig. 5 depicts a partial cross-sectional view of a semiconductor topography in which first and second gate conductors are arranged upon respective first and second active areas of a semiconductor substrate, wherein a first masking layer is formed upon the second active area and the second gate conductor;
Fig. 6 depicts a partial cross-sectional view of the semiconductor topography, wherein an n" LDD implant forwarded into the first active area is self-aligned to the first opposed sidewall surfaces of the first gate conductor, subsequent to the step in Fig. 5; Fig. 7 depicts a partial cross-sectional view of the semiconductor topography, wherein first and second pairs of sidewall spacers are formed upon respective first and second opposed sidewall surfaces which bound the first and second gate conductors, respectively, subsequent to the step in Fig. 6;
Fig. 8 depicts a partial cross-sectional view of the semiconductor topography, wherein a second masking layer is formed upon the second active area, and an n+ implant forwarded into the first active area is self-aligned to the exposed lateral edges of the first pair of spacers, subsequent to the step in Fig. 7;
Fig. 9 depicts a partial cross-sectional view of the semiconductor topography, wherein the first and second pairs of sidewall spacers are isotropically etched to reduce the lateral thickness of each spacer after removing the second masking layer from the second active area, subsequent to the step in Fig. 8; Fig. 10 depicts a partial cross-sectional view of the semiconductor topography, wherein a third masking layer is formed upon the first active area, and wherein a p" LDD implant forwarded into the second active area is self-aligned to the exposed lateral edges of the second pair of sidewall spacers, subsequent to the step in Fig. 9;
Fig. 11 depicts a partial cross-sectional view of the semiconductor topography, wherein third and fourth pairs of sidewall spacers are formed laterally extending from respective first and second sidewall spacers, subsequent to the step in Fig. 10;
Fig. 12 depicts a partial cross-sectional view of a semiconductor topography, wherein a fourth masking layer is formed upon the first active area, and wherein a p* LDD implant forwarded into the second active area is self-aligned to the exposed lateral edges of the fourth pair of sidewall spacers, subsequent to the step in Fig. 11; and
Fig. 13 depicts a partial cross-sectional view of a semiconductor topography, wherein the fourth masking layer is removed from the first active area to complete the formation of NMOS and PMOS transistors, subsequent to the step in Fig. 12.
While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the drawings and detailed description thereto are not intended to limit the invention to the particular form disclosed, but on the contrary, the intention is to cover all modifications, equivalents and alternatives falling within the spirit and scope of the present invention as defined by the appended claims.
MODE(S) FOR CARRYING OUT THE INVENTION
Turning now to Fig. 5, a partial cross-sectional view of a semiconductor substrate 50 is depicted. Substrate 50 preferably comprises single crystalline silicon which has been slightly doped with n-type impurities. Substrate
50 includes first and second active areas 46 and 48 which are isolated from each other and from other active areas within substrate 50 by well-known shallow trench isolation structures 54. Alternatively, trench isolation structures 50 may be replaced with well-known LOCOS structures. A p-type well 52 has been formed within an upper portion of first active area 46 using ion implantation of p-type species therein. In an alternate embodiment, bulk substrate 50 may be slightly doped with p-type impurities, and an n-type well may be arranged within active area 48. A pair of gate conductors 58a and 58b have been patterned a lateral spaced distance apart upon first and second active areas 46 and 48, respectively. Gate conductors 58a and 58b may comprise, e.g., polysilicon which has been chemically-vapor deposited from a silane source. A gate dielectric 56 comprising, e.g., oxide, is interposed between substrate 50 and each gate conductor. As shown in Fig. 5, a masking layer 60 is patterned across active area 48 and gate conductor 58b which leaves well 52 and gate conductor 58a uncovered. Masking layer 60 may comprise, e.g., photoresist which is patterned using optical lithography.
Subsequent to forming masking layer 60, an n' LDD implant is forwarded into areas 62 of p-type well 52 which are not masked by gate conductor 58a. Appropriate n-type dopant species for the LDD implant include arsenic and phosphorus. Fig. 7 illustrates the formation of first and second pairs of sidewall spacers 66a and 66b laterally extending from the opposed sidewall surfaces of respective first and second gate conductors 58a and 58b. Masking layer 60 is stripped from active area 48 prior to spacer formation. Sidewall spacers 66a and 66b may be formed by first depositing a spacer material, e.g., oxide or nitride, across the semiconductor topography, as indicated by dotted line 64. Thereafter, the spacer material is anisotropically etched such that ion ablation of horizontally oriented surfaces occurs at a faster rate than ion ablation of vertically oriented surfaces. The etch preferably terminates before substantial portions of substrate 50 and gate conductor 58 can be removed. Using the anisotropic etch allows the spacer material to be retained upon the sidewall surfaces of gate conductors 58a and 58b in the form of sidewall spacers 66a and 66b.
Turning to Fig. 8, a masking layer 68 comprising, e.g., photoresist, is then patterned upon active area 48 of substrate 50, sidewall spacers 66b, and gate conductor 58b. Thereafter, an n+ S/D implant of n-type dopant species are forwarded into source and drain regions 70 of well 52 which are displaced from gate conductor 58a by a distance substantially equivalent to the lateral thickness of each sidewall spacer 66a. The n* S/D implant is performed at a higher dose and energy than is the n* LDD implant. Source and drain regions 70 dominate a substantial portion of the previously implanted areas 62 such that LDD areas 62 become primarily positioned beneath sidewall spacers 66a. Subsequently, as depicted in Fig. 9, masking layer 68 is removed, and sidewall spacers 66a and 66b are concurrently isotropically etched to reduce their lateral thicknesses. A plasma etch technique which exhibits a high selectivity to the spacer material relative to silicon may, for example, be used. As shown in Fig. 10, a masking layer 72 comprising, e.g., photoresist, is then patterned upon active area 46, gate conductor 58a, and sidewall spacers 66a. A p" LDD implant is forwarded into areas 74 of active area which are laterally spaced from gate conductor 58b by a distance substantially equivalent to the reduced lateral thickness of each sidewall spacers 66b. Appropriate p-type dopant species from the implant include boron and boron difluoride. Turning to Fig. 11, masking layer 72 is removed and third and fourth pairs of sidewall spacers 78a and 78b are formed laterally extending from respective first and second pairs of sidewall spacers 66a and 66b. Formation of sidewall spacers 78a and 78b involves depositing a spacer material, e.g., oxide or nitride, across the topography, as represented by dotted line 76, followed by anisotropically etching the spacer material. Thereafter, as shown in Fig.
12, a masking layer 79 comprising, e.g., photoresist is patterned upon active area 46, gate conductor 58a, and sidewall spacers 66a and 66b. A p* S/D implant is then performed to incorporate a relatively high concentration of p-type dopant species into source and drain regions 80 of active area 48 which are displaced from gate conductor 58b by a distance substantially equivalent to the combined lateral thicknesses of spacers 66b and 78b. The p* S/D implant is performed at a higher dose and energy than the p' LDD implant. Fig. 13 depicts the semiconductor topography after masking layer 79 has been removed from active area 46. An NMOS transistor 82 and a PMOS transistor 84 result from the. sequence of steps shown in Figs. 5-13. An ensuing CMOS integrated circuit employing NMOS transistor 82 and PMOS transistor 84 may be formed using well-known semiconductor fabrication techniques. 3. Industrial Applicability
This invention is suitable for a number of industrial applications including, but not limited to, the field of integrated circuit manufacture. In accordance with the above disclosure, manufacture of an integrated circuit with graded junctions can be carried out using an isotropic etch of sidewall spacers arranged on opposed sidewall surfaces of a pair of CMOS gate conductors. It will be appreciated to those skilled in the art having the benefit of this disclosure that this invention is believed to provide a method for isotropically etching pairs of sidewall spacers to reduce the lateral thickness of each sidewall spacer. Accordingly, the pre-etch thickness of the sidewall spacers may be used as masking structures for a S/D implant of an NMOS transistor while the post-etch thickness of the spacers may be used as masking structures for an LDD implant of a PMOS transistor. Further modifications and alternative embodiments of various aspects of the invention will be apparent to those skilled in the art in view of this description. It is intended that the following claims be interpreted to embrace all such modifications and changes and, accordingly, the specification and drawings are to be regarded in an illustrative rather than a restrictive sense.

Claims

WHAT IS CLAIMED IS:
1. A method for forming an integrated circuit, comprising:
providing first and second gate conductors (58a, 58b) laterally spaced apart and dielectrically spaced above respective first and second active areas (46, 48) of a semiconductor substrate (50);
forming first and second pairs of sidewall spacers (66a, 66b) extending laterally from respective first and second opposed sidewall surfaces of the first and second gate conductors (58a, 58b);
implanting a first type of dopant into source and drain regions (70) of the first active area (46) spaced from the first gate conductor (58a) by the first pair of sidewall spacers (66a);
isotropically etching the first and second pairs of sidewall spacers (66a, 66b) to reduce a lateral thickness of the first and second pairs of sidewall spacers (66a, 66b); and
implanting a second type of dopant into regions (74) of the second active area (48) spaced from the second gate conductor (58b) by the second pair of sidewall spacers (66b) having the reduced lateral thickness.
2. The method of claim 1, further comprising forming a first masking layer (60) across the second gate conductor (58b) and the second active area (48), and implanting a first concentration of the first type of dopant into regions (62) of the first active area (46) exclusive of underneath the first gate conductor (58a) prior to said forming first and second pairs of sidewall spacers (66a, 66b).
3. The method of claim 2, wherein the first type of dopant is implanted into the first source and drain regions (62) at a second concentration greater than the first concentration.
4. The method of claim 3, further comprising removing the first masking layer (60) from the second gate conductor (58b) and the second active area (48) prior to said forming first and second pairs of sidewall spacers (66a, 66b).
5. The method of claim 4, further comprising forming a second masking layer (68) across the second gate conductor (58b), the second pair of sidewall spacers (66b), and the second active area (48) prior to said implanting a first type of dopant into the first source and drain regions (62).
6. The method of claim 4, further comprising forming a third masking layer (72) across the first gate conductor (58a), the first pair of sidewall spacers (66a), and the first source and drain regions (62) prior to said implanting a second type of dopant into regions (74) of the second active area (48).
7. The method of claim 6, further comprising forming a fourth masking layer (79) across the first gate conductor (58a), the first and third pairs of sidewall spacers (66a, 78a), and the first active area (46).
8. An integrated circuit comprising:
first and second gate conductors (58a, 58b) laterally spaced apart and dielectrically spaced above respective first and second active areas (46, 48) of a semiconductor substrate (50), wherein the first and second gate conductors (58a, 58b) are interposed between respective first and second opposed sidewall surfaces;
first and second pairs of sidewall spacers (66a, 66b) extending laterally from the respective first and second opposed sidewall surfaces to respective first and second outer edges;
third and fourth pairs of sidewall spacers (78a, 78b) extending laterally from the first and second outer edges, respectively, to respective third and fourth outer edges;
a first pair of lightly doped drain areas (62) residing within the first active area (46), wherein each of the first pair of lightly doped drain areas (62) comprises a lateral edge spaced between the first outer edge and the third outer edge; and
a second pair of lightly doped drain areas (74) residing within the second active area (48), wherein each of the second pair of lightly doped drain areas (74) extends in approximately lateral alignment with the second outer edge and the fourth outer edge.
9. The integrated circuit of claim 8, wherein the first pair of lightly doped drain areas (62) comprise a first concentration of n-type dopant species.
10. The integrated circuit of claim 9, wherein the second pair of lightly dope drain areas (74) comprise a first concentration of p-type dopant species.
11. The integrated circuit of claim 9, further comprising first source and drain regions (32) arranged within the first active area (46) laterally adjacent the first lightly doped drain areas (62) and having a second concentration of n-type dopant species greater than the first concentration of n-type dopant species.
12. The integrated circuit of claim 10, further comprising second source and drain regions (80) arranged within the second active area (48) laterally adjacent the second lightly doped drain areas (74) and having a second concentration of p-type dopant species greater than the first concentration of p-type dopant species.
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