WO2000003421A8 - Improved endpoint detection for substrate fabrication processes - Google Patents

Improved endpoint detection for substrate fabrication processes

Info

Publication number
WO2000003421A8
WO2000003421A8 PCT/US1999/015648 US9915648W WO0003421A8 WO 2000003421 A8 WO2000003421 A8 WO 2000003421A8 US 9915648 W US9915648 W US 9915648W WO 0003421 A8 WO0003421 A8 WO 0003421A8
Authority
WO
WIPO (PCT)
Prior art keywords
fabrication processes
endpoint detection
substrate fabrication
improved endpoint
substrate
Prior art date
Application number
PCT/US1999/015648
Other languages
French (fr)
Other versions
WO2000003421A2 (en
WO2000003421A3 (en
WO2000003421A9 (en
Inventor
Zhifeng Sui
Paul E Luscher
Nils Johansson
Michael D Welch
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2000559582A priority Critical patent/JP2003521807A/en
Priority to EP99933879A priority patent/EP1125314A1/en
Publication of WO2000003421A2 publication Critical patent/WO2000003421A2/en
Publication of WO2000003421A9 publication Critical patent/WO2000003421A9/en
Publication of WO2000003421A3 publication Critical patent/WO2000003421A3/en
Publication of WO2000003421A8 publication Critical patent/WO2000003421A8/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection

Abstract

A substrate (20) is processed in a process chamber (42) and a first process condition that occurs before, during, or after processing of the substrate, is detected. An accuracy or validity of the first process condition is determined by detecting a second process condition.
PCT/US1999/015648 1998-07-10 1999-07-09 Improved endpoint detection for substrate fabrication processes WO2000003421A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000559582A JP2003521807A (en) 1998-07-10 1999-07-09 Improved endpoint detection for substrate fabrication process
EP99933879A EP1125314A1 (en) 1998-07-10 1999-07-09 Improved endpoint detection for substrate fabrication processes

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US9242698P 1998-07-10 1998-07-10
US60/092,426 1998-07-10
US35005299A 1999-07-08 1999-07-08
US09/350,052 1999-07-09

Publications (4)

Publication Number Publication Date
WO2000003421A2 WO2000003421A2 (en) 2000-01-20
WO2000003421A9 WO2000003421A9 (en) 2000-07-20
WO2000003421A3 WO2000003421A3 (en) 2001-05-31
WO2000003421A8 true WO2000003421A8 (en) 2001-09-20

Family

ID=26785660

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/015648 WO2000003421A2 (en) 1998-07-10 1999-07-09 Improved endpoint detection for substrate fabrication processes

Country Status (3)

Country Link
JP (1) JP2003521807A (en)
KR (1) KR100695582B1 (en)
WO (1) WO2000003421A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW529085B (en) * 2000-09-22 2003-04-21 Alps Electric Co Ltd Method for evaluating performance of plasma treatment apparatus or performance confirming system of plasma treatment system
EP1497701B1 (en) * 2002-04-23 2006-05-31 Tokyo Electron Limited Method and apparatus for simplified system configuration
US6825050B2 (en) 2002-06-07 2004-11-30 Lam Research Corporation Integrated stepwise statistical process control in a plasma processing system
JP3959318B2 (en) 2002-08-22 2007-08-15 東京エレクトロン株式会社 Plasma leak monitoring method, plasma processing apparatus, plasma processing method, and computer program
US20060275931A1 (en) * 2005-05-20 2006-12-07 Asm Japan K.K. Technology of detecting abnormal operation of plasma process
US7638441B2 (en) 2007-09-11 2009-12-29 Asm Japan K.K. Method of forming a carbon polymer film using plasma CVD
US7632549B2 (en) 2008-05-05 2009-12-15 Asm Japan K.K. Method of forming a high transparent carbon film
KR101307247B1 (en) * 2012-09-26 2013-09-11 가톨릭대학교 산학협력단 Silicon wafer etching method using compensation structure and energy harvester manufacturing method using the same
US9978621B1 (en) 2016-11-14 2018-05-22 Applied Materials, Inc. Selective etch rate monitor
CN115537784A (en) * 2022-10-19 2022-12-30 北京北方华创真空技术有限公司 Control method and system for chemical vapor deposition equipment

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5160402A (en) * 1990-05-24 1992-11-03 Applied Materials, Inc. Multi-channel plasma discharge endpoint detection method
US5270222A (en) * 1990-12-31 1993-12-14 Texas Instruments Incorporated Method and apparatus for semiconductor device fabrication diagnosis and prognosis
US5308447A (en) * 1992-06-09 1994-05-03 Luxtron Corporation Endpoint and uniformity determinations in material layer processing through monitoring multiple surface regions across the layer
US5479340A (en) * 1993-09-20 1995-12-26 Sematech, Inc. Real time control of plasma etch utilizing multivariate statistical analysis
US5711843A (en) * 1995-02-21 1998-01-27 Orincon Technologies, Inc. System for indirectly monitoring and controlling a process with particular application to plasma processes

Also Published As

Publication number Publication date
JP2003521807A (en) 2003-07-15
WO2000003421A2 (en) 2000-01-20
WO2000003421A3 (en) 2001-05-31
KR100695582B1 (en) 2007-03-14
KR20010083104A (en) 2001-08-31
WO2000003421A9 (en) 2000-07-20

Similar Documents

Publication Publication Date Title
WO2000003421A8 (en) Improved endpoint detection for substrate fabrication processes
EP1102311A3 (en) Method of and apparatus for dynamic alignment of substrates
WO1995018363A1 (en) Method of monitoring a seal for correct operation, and monitoring device for carrying out the method
WO2002008774A1 (en) Probe driving method, and probe apparatus
WO2001086698A3 (en) Method and system for detecting metal contamination on a semiconductor wafer
AU6287899A (en) Method and device for compensating wafer bias in a plasma processing chamber
EP1052683A4 (en) Exposure method and device
EP1281055A4 (en) Method and system for conservative evaluation, validation and monitoring of thermal processing
TW341719B (en) Surface position detecting method and scanning exposure method using the same
WO2004017389A3 (en) Method for performing real time arcing detection
AU6085999A (en) Processing device and processing tool for processing a workpiece
EP0874396A3 (en) A method of determining a wafer characteristic using a film thickness monitor
WO1999019777A8 (en) Automated substrate processing systems and methods
WO2002010873A3 (en) Method and apparatus for fault detection of a processing tool and control thereof using an advanced process control (apc) framework
WO2001042767A3 (en) Detecting a process endpoint from a change in reflectivity
CA2351359A1 (en) Method for cell alignment and identification and calibration of robot tool
WO2003013054A1 (en) Apparatus and method for generating data for detecting false alteration of encrypted data during processing
WO2004042788A3 (en) Method and apparatus for determining an etch property using an endpoint signal
MY117433A (en) Method and apparatus for detecting contact lenses
WO2004032178A3 (en) Plasma processing system and method
WO2001024255A3 (en) Interferometric method for endpointing plasma etch processes
WO2003003422A3 (en) In-situ end point detection for semiconductor wafer polishing
WO2000039839A3 (en) High aspect ratio sub-micron contact etch process in an inductively-coupled plasma processing system
US20030010750A1 (en) Method for determining the endpoint of etch process steps
EP0802416A3 (en) Manufacturing method of semiconductor acceleration sensor

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP KR

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
AK Designated states

Kind code of ref document: C1

Designated state(s): JP KR

AL Designated countries for regional patents

Kind code of ref document: C1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

CFP Corrected version of a pamphlet front page
CR1 Correction of entry in section i

Free format text: PAT. BUL. 03/2000 UNDER (30) REPLACE "NOT FURNISHED" BY "09/350052"

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: C2

Designated state(s): JP KR

AL Designated countries for regional patents

Kind code of ref document: C2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

COP Corrected version of pamphlet

Free format text: PAGES 1-38, DESCRIPTION, REPLACED BY NEW PAGES 1-38; PAGES 39-50, CLAIMS, REPLACED BY NEW PAGES 39-50; PAGES 1/13-13/13, DRAWINGS, REPLACED BY NEW PAGES 1/9-9/9; DUE TO LATE TRANSMITTAL BY THE RECEIVING OFFICE

ENP Entry into the national phase

Ref country code: JP

Ref document number: 2000 559582

Kind code of ref document: A

Format of ref document f/p: F

WWE Wipo information: entry into national phase

Ref document number: 1020017000422

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 1999933879

Country of ref document: EP

AK Designated states

Kind code of ref document: A3

Designated state(s): JP KR

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

WWP Wipo information: published in national office

Ref document number: 1999933879

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020017000422

Country of ref document: KR

AK Designated states

Kind code of ref document: B8

Designated state(s): JP KR

AL Designated countries for regional patents

Kind code of ref document: B8

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

CFP Corrected version of a pamphlet front page
CR1 Correction of entry in section i

Free format text: PAT. BUL. 03/2000 UNDER (30) REPLACE "09.07.99" BY "08.07.99"

WWW Wipo information: withdrawn in national office

Ref document number: 1999933879

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 1020017000422

Country of ref document: KR