WO2000007221A3 - Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots - Google Patents

Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots Download PDF

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Publication number
WO2000007221A3
WO2000007221A3 PCT/US1999/017391 US9917391W WO0007221A3 WO 2000007221 A3 WO2000007221 A3 WO 2000007221A3 US 9917391 W US9917391 W US 9917391W WO 0007221 A3 WO0007221 A3 WO 0007221A3
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WO
WIPO (PCT)
Prior art keywords
indium nitride
holographic
laser
nanostructure
indium
Prior art date
Application number
PCT/US1999/017391
Other languages
French (fr)
Other versions
WO2000007221A2 (en
Inventor
Guy D Gilliland
Ming-Chang Lin
Original Assignee
Univ Emory
Guy D Gilliland
Lin Ming Chang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Emory, Guy D Gilliland, Lin Ming Chang filed Critical Univ Emory
Priority to AU52484/99A priority Critical patent/AU5248499A/en
Priority to US09/762,038 priority patent/US6558995B1/en
Publication of WO2000007221A2 publication Critical patent/WO2000007221A2/en
Publication of WO2000007221A3 publication Critical patent/WO2000007221A3/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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    • B82—NANOTECHNOLOGY
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    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00—Electrolytic production of inorganic compounds or non-metals
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    • C30—CRYSTAL GROWTH
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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Abstract

A semiconductor device is constructed of at least one indium nitride or indium nitride alloy nanostructure on a substrate or other thing film layer. The method used to create the semiconductor device involves illuminating the substrate (10) with lateral intensity patterning of ultraviolet light (30) in the presence of at least hydrazoic acid and a compound containing indium gas flows (20). Additionally, a semiconductor light emitting/detecting modulating device composed of at least one indium nitride or indium nitride alloy nanostructure. The method used to create the semiconductor light emitting/detecting modulating device involves embedding at least one nanostructure in the interior layer of the device. Furthermore, a monolithic photovoltaic-photoelectrochemical device wherein one layer is composed of an indium nitride or indium nitride alloy nanostructure.
PCT/US1999/017391 1998-07-31 1999-07-30 Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots WO2000007221A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU52484/99A AU5248499A (en) 1998-07-31 1999-07-30 Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots
US09/762,038 US6558995B1 (en) 1998-07-31 1999-07-30 Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9476698P 1998-07-31 1998-07-31
US60/094,766 1998-07-31

Publications (2)

Publication Number Publication Date
WO2000007221A2 WO2000007221A2 (en) 2000-02-10
WO2000007221A3 true WO2000007221A3 (en) 2000-06-08

Family

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PCT/US1999/017391 WO2000007221A2 (en) 1998-07-31 1999-07-30 Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots

Country Status (3)

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US (1) US6558995B1 (en)
AU (1) AU5248499A (en)
WO (1) WO2000007221A2 (en)

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US6819845B2 (en) 2001-08-02 2004-11-16 Ultradots, Inc. Optical devices with engineered nonlinear nanocomposite materials
US20030066998A1 (en) * 2001-08-02 2003-04-10 Lee Howard Wing Hoon Quantum dots of Group IV semiconductor materials
US6710366B1 (en) 2001-08-02 2004-03-23 Ultradots, Inc. Nanocomposite materials with engineered properties
US6794265B2 (en) * 2001-08-02 2004-09-21 Ultradots, Inc. Methods of forming quantum dots of Group IV semiconductor materials
US6836351B2 (en) * 2002-10-30 2004-12-28 Northrop Grumman Corporation Quantum-confined stark effect quantum-dot optical modulator
EP1658394B1 (en) * 2003-08-08 2010-05-12 Centre National De La Recherche Scientifique (Cnrs) Method to manufacture indium nitride quantum dots and product containing these dots
JP2008511985A (en) * 2004-08-31 2008-04-17 エージェンシー フォー サイエンス，テクノロジー アンド リサーチ Nanostructure and method for producing the same
US20070034858A1 (en) * 2005-08-11 2007-02-15 Hock Ng Light-emitting diodes with quantum dots
KR20080103567A (en) * 2006-02-17 2008-11-27 코넬 리서치 파운데이션 인코포레이티드 Property modification during film growth
JP2007294878A (en) * 2006-03-31 2007-11-08 Fujifilm Corp Semiconductor layer, depositing method, semiconductor light emitting device and semiconductor luminescent device
WO2011006102A2 (en) * 2009-07-09 2011-01-13 Wladyslaw Walukiewicz Tandem photoelectrochemical cell for water dissociation
CN102916343B (en) * 2011-08-05 2015-07-15 苏州大学 Production device and production method for quantum dot material
US10087535B2 (en) * 2015-03-23 2018-10-02 Alliance For Sustainable Energy, Llc Devices and methods for photoelectrochemical water splitting
CN115458651B (en) * 2022-11-14 2023-01-31 江西兆驰半导体有限公司 Green light emitting diode epitaxial wafer, preparation method thereof and green light emitting diode

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US5925897A (en) * 1997-02-14 1999-07-20 Oberman; David B. Optoelectronic semiconductor diodes and devices comprising same
US5989947A (en) * 1995-06-20 1999-11-23 Max-Planck-Geselleschaft Zur Method for the manufacture of quantum structures, in particular quantum dots and tunnel barriers as well as components with such quantum structures
US6011271A (en) * 1994-04-28 2000-01-04 Fujitsu Limited Semiconductor device and method of fabricating the same

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US5583351A (en) * 1993-04-22 1996-12-10 Sharp Kabushiki Kaisha Color display/detector
US6011271A (en) * 1994-04-28 2000-01-04 Fujitsu Limited Semiconductor device and method of fabricating the same
US5989947A (en) * 1995-06-20 1999-11-23 Max-Planck-Geselleschaft Zur Method for the manufacture of quantum structures, in particular quantum dots and tunnel barriers as well as components with such quantum structures
US5780355A (en) * 1996-11-27 1998-07-14 The Regents Of The University Of California UV assisted gallium nitride growth
US5880491A (en) * 1997-01-31 1999-03-09 The United States Of America As Represented By The Secretary Of The Air Force SiC/111-V-nitride heterostructures on SiC/SiO2 /Si for optoelectronic devices
US5925897A (en) * 1997-02-14 1999-07-20 Oberman; David B. Optoelectronic semiconductor diodes and devices comprising same

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AU5248499A (en) 2000-02-21
US6558995B1 (en) 2003-05-06
WO2000007221A2 (en) 2000-02-10

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