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Patentes

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Número de publicaciónWO2000013211 A9
Tipo de publicaciónSolicitud
Número de solicitudPCT/US1999/019958
Fecha de publicación2 Jun 2000
Fecha de presentación31 Ago 1999
Fecha de prioridad2 Sep 1998
También publicado comoCN1155074C, CN1321336A, EP1114454A2, US6236104, US6342725, US6849901, US20010030348, US20020113265, US20050130394, US20080020168, WO2000013211A2, WO2000013211A3
Número de publicaciónPCT/1999/19958, PCT/US/1999/019958, PCT/US/1999/19958, PCT/US/99/019958, PCT/US/99/19958, PCT/US1999/019958, PCT/US1999/19958, PCT/US1999019958, PCT/US199919958, PCT/US99/019958, PCT/US99/19958, PCT/US99019958, PCT/US9919958, WO 0013211 A9, WO 0013211A9, WO 2000/013211 A9, WO 2000013211 A9, WO 2000013211A9, WO-A9-0013211, WO-A9-2000013211, WO0013211 A9, WO0013211A9, WO2000/013211A9, WO2000013211 A9, WO2000013211A9
InventoresRobert J Falster
SolicitanteMemc Electronic Materials
Exportar citaBiBTeX, EndNote, RefMan
Enlaces externos:  Patentscope, Espacenet
Silicon on insulator structure from low defect density single crystal silicon
WO 2000013211 A9
Descripción  disponible en inglés
Reclamaciones  disponible en inglés
Clasificaciones
Clasificación internacionalH01L21/02, C30B15/00, H01L21/762, H01L27/12, H01L21/322
Clasificación cooperativaY10T428/21, H01L21/3225, C30B29/06, H01L21/7624, H01L21/3226, C30B15/206, H01L21/76251, C30B15/203, Y10S257/913
Clasificación europeaC30B29/06, C30B15/20B, C30B15/20C, H01L21/762D, H01L21/322B8, H01L21/322B10, H01L21/762D8
Eventos legales
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