WO2000019505A1 - Method and apparatus for improving accuracy of plasma etching process - Google Patents
Method and apparatus for improving accuracy of plasma etching process Download PDFInfo
- Publication number
- WO2000019505A1 WO2000019505A1 PCT/US1999/020889 US9920889W WO0019505A1 WO 2000019505 A1 WO2000019505 A1 WO 2000019505A1 US 9920889 W US9920889 W US 9920889W WO 0019505 A1 WO0019505 A1 WO 0019505A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- masking layer
- etching
- openings
- plasma
- set forth
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/22—Measuring arrangements characterised by the use of optical techniques for measuring depth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE69942983T DE69942983D1 (en) | 1998-09-30 | 1999-09-24 | REALITY OF A PLASMA WORKING PROCESS |
JP2000572914A JP4563584B2 (en) | 1998-09-30 | 1999-09-24 | Method and apparatus for improving accuracy of plasma etching process |
AU62464/99A AU6246499A (en) | 1998-09-30 | 1999-09-24 | Method and apparatus for improving accuracy of plasma etching process |
EP99949629A EP1129478B1 (en) | 1998-09-30 | 1999-09-24 | Method and apparatus for improving accuracy of plasma etching process |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/163,303 US6136712A (en) | 1998-09-30 | 1998-09-30 | Method and apparatus for improving accuracy of plasma etching process |
US09/163,303 | 1998-09-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000019505A1 true WO2000019505A1 (en) | 2000-04-06 |
Family
ID=22589402
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/020889 WO2000019505A1 (en) | 1998-09-30 | 1999-09-24 | Method and apparatus for improving accuracy of plasma etching process |
Country Status (8)
Country | Link |
---|---|
US (2) | US6136712A (en) |
EP (1) | EP1129478B1 (en) |
JP (1) | JP4563584B2 (en) |
KR (1) | KR100659163B1 (en) |
AU (1) | AU6246499A (en) |
DE (1) | DE69942983D1 (en) |
TW (1) | TW452881B (en) |
WO (1) | WO2000019505A1 (en) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1089318A1 (en) * | 1999-09-30 | 2001-04-04 | Infineon Technologies AG | Method for determining the endpoint of etch process steps |
US6413867B1 (en) * | 1999-12-23 | 2002-07-02 | Applied Materials, Inc. | Film thickness control using spectral interferometry |
US6620631B1 (en) * | 2000-05-18 | 2003-09-16 | Taiwan Semiconductor Manufacturing Co., Ltd | Plasma etch method for forming patterned layer with enhanced critical dimension (CD) control |
AU2002240097A1 (en) * | 2001-02-14 | 2002-08-28 | Advanced Micro Devices, Inc. | Method and apparatus for controlling etch selectivity |
US6545753B2 (en) * | 2001-06-27 | 2003-04-08 | Advanced Micro Devices, Inc. | Using scatterometry for etch end points for dual damascene process |
KR100438379B1 (en) * | 2001-09-05 | 2004-07-02 | 가부시끼가이샤 히다치 세이사꾸쇼 | Method and apparatus for determining endpoint of semiconductor element fabricating process and method and apparatus for processing member to be processed |
US6778268B1 (en) * | 2001-10-09 | 2004-08-17 | Advanced Micro Devices, Sinc. | System and method for process monitoring of polysilicon etch |
US7204934B1 (en) | 2001-10-31 | 2007-04-17 | Lam Research Corporation | Method for planarization etch with in-situ monitoring by interferometry prior to recess etch |
US6686270B1 (en) * | 2002-08-05 | 2004-02-03 | Advanced Micro Devices, Inc. | Dual damascene trench depth monitoring |
US6979578B2 (en) | 2002-08-13 | 2005-12-27 | Lam Research Corporation | Process endpoint detection method using broadband reflectometry |
US7399711B2 (en) * | 2002-08-13 | 2008-07-15 | Lam Research Corporation | Method for controlling a recess etch process |
US7019844B2 (en) * | 2002-08-13 | 2006-03-28 | Lam Research Corporation | Method for in-situ monitoring of patterned substrate processing using reflectometry. |
DE10255850B4 (en) * | 2002-11-29 | 2007-12-06 | Advanced Micro Devices, Inc., Sunnyvale | Process for the production of semiconductor structures to form a signal layer for generating characteristic optical plasma emissions and integrated circuit chip |
US8257546B2 (en) * | 2003-04-11 | 2012-09-04 | Applied Materials, Inc. | Method and system for monitoring an etch process |
US6979579B1 (en) * | 2004-03-30 | 2005-12-27 | Lam Research Corporation | Methods and apparatus for inspecting contact openings in a plasma processing system |
US7069098B2 (en) * | 2004-08-02 | 2006-06-27 | Advanced Micro Devices, Inc. | Method and system for prioritizing material to clear exception conditions |
US7514277B2 (en) * | 2004-09-14 | 2009-04-07 | Tokyo Electron Limited | Etching method and apparatus |
US7076321B2 (en) * | 2004-10-05 | 2006-07-11 | Advanced Micro Devices, Inc. | Method and system for dynamically adjusting metrology sampling based upon available metrology capacity |
US7296103B1 (en) | 2004-10-05 | 2007-11-13 | Advanced Micro Devices, Inc. | Method and system for dynamically selecting wafer lots for metrology processing |
US20080066866A1 (en) * | 2006-09-14 | 2008-03-20 | Martin Kerber | Method and apparatus for reducing plasma-induced damage in a semiconductor device |
US7444198B2 (en) * | 2006-12-15 | 2008-10-28 | Applied Materials, Inc. | Determining physical property of substrate |
US7952708B2 (en) * | 2007-04-02 | 2011-05-31 | Applied Materials, Inc. | High throughput measurement system |
KR101307247B1 (en) * | 2012-09-26 | 2013-09-11 | 가톨릭대학교 산학협력단 | Silicon wafer etching method using compensation structure and energy harvester manufacturing method using the same |
CN103107080B (en) * | 2013-01-11 | 2017-02-08 | 无锡华润上华半导体有限公司 | Etching method for solving glue pasting problem on surface of wafer in deep-groove etching process |
KR101469000B1 (en) * | 2013-07-17 | 2014-12-04 | 주식회사 엠엠테크 | apparatus for slimming glass and method for manufacturing thereof |
US10998215B2 (en) * | 2018-06-27 | 2021-05-04 | Facebook Technologies, Llc | Monitoring dry-etching of polymer layer for transferring semiconductor devices |
US11830779B2 (en) | 2020-08-12 | 2023-11-28 | Applied Materials, Inc. | In-situ etch material selectivity detection system |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4367044A (en) * | 1980-12-31 | 1983-01-04 | International Business Machines Corp. | Situ rate and depth monitor for silicon etching |
JPS62299032A (en) * | 1986-06-19 | 1987-12-26 | Canon Inc | Etching monitor |
US4927785A (en) | 1987-06-04 | 1990-05-22 | U.S. Philips Corporation | Method of manufacturing semiconductor devices |
EP0511448A1 (en) * | 1991-04-30 | 1992-11-04 | International Business Machines Corporation | Method and apparatus for in-situ and on-line monitoring of a trench formation process |
EP0679948A2 (en) * | 1994-04-28 | 1995-11-02 | International Business Machines Corporation | Dual phase and hybrid phase shifting mask fabrication using a surface etch monitoring technique |
US5807761A (en) * | 1995-07-24 | 1998-09-15 | International Business Machines Corporation | Method for real-time in-situ monitoring of a trench formation process |
EP0889359A2 (en) * | 1997-06-27 | 1999-01-07 | Canon Kabushiki Kaisha | Etching method for manufacture of a phase-shift mask |
Family Cites Families (25)
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US4328068A (en) * | 1980-07-22 | 1982-05-04 | Rca Corporation | Method for end point detection in a plasma etching process |
US4376672A (en) * | 1981-10-26 | 1983-03-15 | Applied Materials, Inc. | Materials and methods for plasma etching of oxides and nitrides of silicon |
US4615761A (en) * | 1985-03-15 | 1986-10-07 | Hitachi, Ltd. | Method of and apparatus for detecting an end point of plasma treatment |
JPS6223113A (en) * | 1985-07-24 | 1987-01-31 | Hitachi Ltd | Detection for end point |
US4675072A (en) * | 1986-06-25 | 1987-06-23 | International Business Machines Corporation | Trench etch endpoint detection by LIF |
JPS6323324A (en) * | 1986-07-16 | 1988-01-30 | Sharp Corp | Dry etching apparatus |
JPS63148675A (en) * | 1986-12-12 | 1988-06-21 | Toshiba Corp | Semiconductor device |
US5045149A (en) * | 1988-10-24 | 1991-09-03 | Vlsi Technology, Inc. | Method and apparatus for end point detection |
US5013400A (en) * | 1990-01-30 | 1991-05-07 | General Signal Corporation | Dry etch process for forming champagne profiles, and dry etch apparatus |
US5021121A (en) * | 1990-02-16 | 1991-06-04 | Applied Materials, Inc. | Process for RIE etching silicon dioxide |
US5013398A (en) * | 1990-05-29 | 1991-05-07 | Micron Technology, Inc. | Anisotropic etch method for a sandwich structure |
US5022958A (en) * | 1990-06-27 | 1991-06-11 | At&T Bell Laboratories | Method of etching for integrated circuits with planarized dielectric |
US5131752A (en) * | 1990-06-28 | 1992-07-21 | Tamarack Scientific Co., Inc. | Method for film thickness endpoint control |
US5413966A (en) * | 1990-12-20 | 1995-05-09 | Lsi Logic Corporation | Shallow trench etch |
US5362356A (en) * | 1990-12-20 | 1994-11-08 | Lsi Logic Corporation | Plasma etching process control |
JPH04370929A (en) * | 1991-06-20 | 1992-12-24 | Sharp Corp | Dry etching method |
US5269879A (en) * | 1991-10-16 | 1993-12-14 | Lam Research Corporation | Method of etching vias without sputtering of underlying electrically conductive layer |
US5450205A (en) * | 1993-05-28 | 1995-09-12 | Massachusetts Institute Of Technology | Apparatus and method for real-time measurement of thin film layer thickness and changes thereof |
US5529657A (en) * | 1993-10-04 | 1996-06-25 | Tokyo Electron Limited | Plasma processing apparatus |
JPH07221073A (en) * | 1994-01-31 | 1995-08-18 | Sony Corp | Method and apparatus for etching of substrate |
JP3778299B2 (en) * | 1995-02-07 | 2006-05-24 | 東京エレクトロン株式会社 | Plasma etching method |
US5626716A (en) * | 1995-09-29 | 1997-05-06 | Lam Research Corporation | Plasma etching of semiconductors |
US5747380A (en) * | 1996-02-26 | 1998-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Robust end-point detection for contact and via etching |
US6034389A (en) * | 1997-01-22 | 2000-03-07 | International Business Machines Corporation | Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array |
US5780338A (en) * | 1997-04-11 | 1998-07-14 | Vanguard International Semiconductor Corporation | Method for manufacturing crown-shaped capacitors for dynamic random access memory integrated circuits |
-
1998
- 1998-09-30 US US09/163,303 patent/US6136712A/en not_active Expired - Lifetime
-
1999
- 1999-09-24 DE DE69942983T patent/DE69942983D1/en not_active Expired - Lifetime
- 1999-09-24 AU AU62464/99A patent/AU6246499A/en not_active Abandoned
- 1999-09-24 WO PCT/US1999/020889 patent/WO2000019505A1/en active IP Right Grant
- 1999-09-24 JP JP2000572914A patent/JP4563584B2/en not_active Expired - Fee Related
- 1999-09-24 KR KR1020017004036A patent/KR100659163B1/en not_active IP Right Cessation
- 1999-09-24 EP EP99949629A patent/EP1129478B1/en not_active Expired - Lifetime
- 1999-09-29 TW TW088116760A patent/TW452881B/en not_active IP Right Cessation
-
2000
- 2000-04-10 US US09/546,428 patent/US6270622B1/en not_active Expired - Lifetime
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4367044A (en) * | 1980-12-31 | 1983-01-04 | International Business Machines Corp. | Situ rate and depth monitor for silicon etching |
JPS62299032A (en) * | 1986-06-19 | 1987-12-26 | Canon Inc | Etching monitor |
US4927785A (en) | 1987-06-04 | 1990-05-22 | U.S. Philips Corporation | Method of manufacturing semiconductor devices |
EP0511448A1 (en) * | 1991-04-30 | 1992-11-04 | International Business Machines Corporation | Method and apparatus for in-situ and on-line monitoring of a trench formation process |
EP0679948A2 (en) * | 1994-04-28 | 1995-11-02 | International Business Machines Corporation | Dual phase and hybrid phase shifting mask fabrication using a surface etch monitoring technique |
US5807761A (en) * | 1995-07-24 | 1998-09-15 | International Business Machines Corporation | Method for real-time in-situ monitoring of a trench formation process |
EP0889359A2 (en) * | 1997-06-27 | 1999-01-07 | Canon Kabushiki Kaisha | Etching method for manufacture of a phase-shift mask |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 12, no. 196 (E - 618) 7 June 1988 (1988-06-07) * |
Also Published As
Publication number | Publication date |
---|---|
KR20010075467A (en) | 2001-08-09 |
EP1129478B1 (en) | 2010-11-24 |
DE69942983D1 (en) | 2011-01-05 |
JP2002526918A (en) | 2002-08-20 |
AU6246499A (en) | 2000-04-17 |
JP4563584B2 (en) | 2010-10-13 |
TW452881B (en) | 2001-09-01 |
KR100659163B1 (en) | 2006-12-18 |
US6270622B1 (en) | 2001-08-07 |
US6136712A (en) | 2000-10-24 |
EP1129478A1 (en) | 2001-09-05 |
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