WO2000021143A1 - Radiation emitting semiconductor chip - Google Patents

Radiation emitting semiconductor chip Download PDF

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Publication number
WO2000021143A1
WO2000021143A1 PCT/DE1999/003211 DE9903211W WO0021143A1 WO 2000021143 A1 WO2000021143 A1 WO 2000021143A1 DE 9903211 W DE9903211 W DE 9903211W WO 0021143 A1 WO0021143 A1 WO 0021143A1
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Prior art keywords
active layer
semiconductor chip
gan
quantum well
emitting semiconductor
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PCT/DE1999/003211
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German (de)
French (fr)
Inventor
Volker HÄRLE
Berthold Hahn
Andreas Hangleiter
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Osram Opto Semiconductors Gmbh & Co. Ohg
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Publication of WO2000021143A1 publication Critical patent/WO2000021143A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3425—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising couples wells or superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Definitions

  • the invention relates to a radiation-emitting semiconductor chip, in particular based on GaN / GalnN, in which the active layer has a single or multiple quantum well structure, in particular UV, blue - light or green light-emitting semiconductor chips.
  • the active layer In the case of a single quantum well, the active layer generally has two barrier layers and a quantum film lying between them, and in the case of a multiple quantum well there are usually x quantum films and x + 1 barrier layers (where x> l) in which the quantum films are embedded are.
  • x quantum films and x + 1 barrier layers where x> l
  • Single and multiple quantum well structures are known per se and are therefore not explained in more detail here.
  • Emitting diode chips strongly depends on the level of the operating current.
  • the reason for this can be, on the one hand, an in-segregation in the quantum well range and, on the other hand, can be piezoelectric fields that are caused by internal tension in the chip. Applying electrical voltage to the chip in the forward direction leads to a scanning of the internal fields and, with increasing current strength through the chip, to a wavelength shift of the emitted radiation toward shorter wavelengths. The greater the wavelength of the emitted radiation, the stronger this effect is shown.
  • the object of the invention is to develop a semiconductor chip of the type mentioned, in which the wavelength of the emitted radiation is largely is independent of changes in the current through the chip.
  • the former is achieved with a semiconductor chip of the type mentioned in the introduction, in which the active layer has thin quantum films with a thickness of ⁇ 3 nm.
  • FIG. 1 A particularly preferred exemplary embodiment of this, shown schematically in FIG. 1, is a
  • Semiconductor chip with an active layer 4 which has a GaN / GalnN multi-quantum well structure, in which 3.5 GalnN quantum films with a thickness ⁇ 3 nm are arranged between GaN barrier layers and which is produced on an SiC substrate 1, whereby Additional layers, in particular a buffer layer 2, can be located between the substrate 1 and the active layer 4.
  • the second is achieved with a semiconductor chip of the type mentioned in the introduction, in which the barrier layers 3, 5 and / or the quantum films are doped in an electrically conductive manner.
  • the doping is designed for the existing fields so that they are compensated for. It is based on the tension in the active layer.
  • Optimal compensation of the piezo fields is achieved by high doping of the active layer. As a result, the piezo fields are virtually short-circuited. This also anticipates the charge carrier densities that occur in later operation. Technically, this is possible, for example, through high n-doping in the area of the active zone. To a To achieve the highest possible ratio p / (p + n), high p-doping is required.
  • the charge carrier densities required for the compensation of the internal fields are greater than 10 19 cm 3 . They are achieved by doping the quantum well range or by remote doping of barrier layers.
  • the barrier layers can be doped bipolar. Effective compensation can be achieved by acceptors and donors directly on the quantum well.
  • the charge carrier densities are greater than 10 19 cm 3 .
  • p-doping and below the quantum well is advantageously heavily n-doped. The piezo fields are canceled by the fields caused by the ionized donors and acceptors.
  • a particularly preferred exemplary embodiment is a semiconductor chip with an active layer which has a GaN / GalnN multi-quantum well structure in which between GaN
  • Barrier layers of GalnN quantum films are arranged and which is produced on an SiC substrate and in which further layers, in particular a buffer layer, can be located between the substrate and the active layer, the GaN barrier layers and / or the GalnN -
  • Quantum films are electrically doped, ie they are n- or p-doped. The doping is based on the tension and not on the structure, i. H. z. B. on an n- or p-doped buffer layer.
  • a relaxed semiconductor layer is arranged between the substrate and the active layer, which has the same lattice constant as the lattice constant in the quantum well.
  • a particularly preferred exemplary embodiment of this shown schematically in FIG. 2, is a Semiconductor chip with an active layer 4, which has a GaN / GalnN multi-quantum well structure, in which 3.5 GalnN quantum files are arranged between GaN barrier layers and which is produced on an SiC substrate 1, wherein between the substrate 1 and the active
  • Layer 4 is a relaxed InGaAlN layer 6, which has the same lattice constant as that of the quantum well.
  • the barrier layers 5, 6 consist of AlGalnN.
  • the structures given above can be used for all GalnN / GaN-based LEDs as well as for all structures that have strong internal stress fields.

Abstract

A semiconductor chip, especially a GaN/GaInN based chip, that emits radiation, whereby the active layer has a multi quantum wave structure. The active layer has very thin quantum films (maximum thickness: 3 nm) and/or electro-conductive doped barrier layers and/or quantum films. The wavelengths of the emitted radiation is substantially independent of changes in the intensity of the current through the chip.

Description

Beschreibungdescription
Strahlungsemittierender HalbleiterchipRadiation-emitting semiconductor chip
Die Erfindung bezieht sich auf einen strahlungsemittierenden Halbleiterchip, insbesondere auf der Basis von GaN/GalnN, bei dem die aktive Schicht eine Einfach- oder Mehrfach- Quantenwell-Struktur aufweist, insbesondere auf UV-, blaues - Licht oder grünes Licht emittierende Halbleiterchips .The invention relates to a radiation-emitting semiconductor chip, in particular based on GaN / GalnN, in which the active layer has a single or multiple quantum well structure, in particular UV, blue - light or green light-emitting semiconductor chips.
Die aktive Schicht weist bei einer Einfach-Quantenwell in der Regel zwei Barriereschichten und einen zwischen diesen liegenden Quantenfilm auf, und bei einer Mehrfach-Quantenwell in der Regel x Quantenfilme und x+1 Barriereschichten (wobei x>l), in die die Quantenfilme eingebettet sind. Einfach- und Mehrfach-Quantenwell-Strukturen sind an sich bekannt und werden von daher an dieser Stelle nicht näher erläutert.In the case of a single quantum well, the active layer generally has two barrier layers and a quantum film lying between them, and in the case of a multiple quantum well there are usually x quantum films and x + 1 barrier layers (where x> l) in which the quantum films are embedded are. Single and multiple quantum well structures are known per se and are therefore not explained in more detail here.
Die Wellenlänge der ausgesandten Strahlung von bekannten derartigen lichtemittierenden Halbleiterchips (LED (LightThe wavelength of the emitted radiation from known light-emitting semiconductor chips of this type (LED (Light
Emitting Diode) -Chips) ist stark abhängig von der Höhe des Betriebsstromes .Emitting diode) chips) strongly depends on the level of the operating current.
Ursache dafür kann zum Einen eine In-Segregation im Quantenwellbereich und können zum anderen piezoelektrische Felder sein, die durch interne Verspannungen im Chip hervorgerufen werden. Ein Anlegen von elektrischer Spannung an den Chip in Vorwärtsrichtung führt zu einem Abrastern der internen Felder und mit zunehmender Stromstärke durch den Chip zu einer Wellenlängenverschiebung der emittierten Strahlung zu kürzeren Wellenlängen hin. Je größer die Wellenlänge der emittierten Strahlung ist, umso stärker zeigt sich dieser Effekt.The reason for this can be, on the one hand, an in-segregation in the quantum well range and, on the other hand, can be piezoelectric fields that are caused by internal tension in the chip. Applying electrical voltage to the chip in the forward direction leads to a scanning of the internal fields and, with increasing current strength through the chip, to a wavelength shift of the emitted radiation toward shorter wavelengths. The greater the wavelength of the emitted radiation, the stronger this effect is shown.
Die Aufgabe der Erfindung besteht darin, einen Halbleiterchip der eingangs genannten Art zu entwickeln, bei dem die Wellenlänge der emittierten Strahlung weitestgehend unabhängig ist gegenüber Veränderungen der Stromstärke durch den Chip.The object of the invention is to develop a semiconductor chip of the type mentioned, in which the wavelength of the emitted radiation is largely is independent of changes in the current through the chip.
Diese Aufgabe wird durch einen Halbleiterchip mit den Merkmalen des Anspruches 1, 4, 5 oder 6 gelöst. Bei einem solchen Halbleiterchip sind die piezoelektrischen Felder klein gehalten und/oder durch den Einbau von zusätzlichen internen Feldern weitestgehend kompensiert.This object is achieved by a semiconductor chip with the features of claims 1, 4, 5 or 6. In such a semiconductor chip, the piezoelectric fields are kept small and / or largely compensated for by the installation of additional internal fields.
Ersteres wird mit einem Halbleiterchip der eingangs genannten Art erreicht, bei dem die aktive Schicht dünne Quantenfilme mit einer Dicke < 3nm aufweist.The former is achieved with a semiconductor chip of the type mentioned in the introduction, in which the active layer has thin quantum films with a thickness of <3 nm.
Ein besonders bevorzugtes, in Figur 1 schematisch dargestelltes Ausführungsbeispiel hierfür ist einA particularly preferred exemplary embodiment of this, shown schematically in FIG. 1, is a
Halbleiterchip mit einer aktiven Schicht 4, die eine GaN/GalnN-Multiquantenwell-Struktur aufweist, bei der zwischen GaN-Barriereschichten 3,5 GalnN-Quantenfilme mit einer Dicke < 3nm angeordnet sind und die auf einem SiC- Substrat 1 hergestellt ist, wobei sich zwischen dem Substrat 1 und der aktiven Schicht 4 noch weitere Schichten, insbesondere eine Puffer-Schicht 2, befinden können.Semiconductor chip with an active layer 4, which has a GaN / GalnN multi-quantum well structure, in which 3.5 GalnN quantum films with a thickness <3 nm are arranged between GaN barrier layers and which is produced on an SiC substrate 1, whereby Additional layers, in particular a buffer layer 2, can be located between the substrate 1 and the active layer 4.
Zweiteres wird mit einem Halbleiterchip der eingangs genannten Art erreicht, bei dem die Barriereschichten 3,5 und/oder die Quantenfilme elektrisch leitend dotiert sind. Die Dotierung ist auf die vorliegenden Felder ausgelegt, so daß diese kompensiert werden. Sie orientiert sich an der Verspannung in der aktiven Schicht.The second is achieved with a semiconductor chip of the type mentioned in the introduction, in which the barrier layers 3, 5 and / or the quantum films are doped in an electrically conductive manner. The doping is designed for the existing fields so that they are compensated for. It is based on the tension in the active layer.
Eine optimale Kompensation der Piezofelder wird durch eine hohe Dotierung der aktiven Schicht erreicht. Dadurch werden die Piezofelder quasi kurzgeschlossen. Dadurch werden auch die im späteren Betrieb auftretenden Ladungsträgerdichten vorweggenommen. Technisch ist dies beispielsweise durch hohe n-Dotierung im Bereich der aktiven Zone möglich. Um ein möglichst hohes Verhältnis p/ (p+n) zu erreichen ist hohe p- Dotierung erforderlich.Optimal compensation of the piezo fields is achieved by high doping of the active layer. As a result, the piezo fields are virtually short-circuited. This also anticipates the charge carrier densities that occur in later operation. Technically, this is possible, for example, through high n-doping in the area of the active zone. To a To achieve the highest possible ratio p / (p + n), high p-doping is required.
Die für die Kompensation der internen Felder benötigten Ladungsträgerdichten sind größer 1019cιrf3. Sie werden durch Dotierung des Quantenwellbereichs oder durch remote doping von Barriereschichten erzielt.The charge carrier densities required for the compensation of the internal fields are greater than 10 19 cm 3 . They are achieved by doping the quantum well range or by remote doping of barrier layers.
Alternativ können die Barriereschichten bipolar dotiert werden. Eine effektive Kompensation kann durch Akzeptoren und Donatoren direkt am Quantenwell erzielt werden. Die Ladungsträgerdichten sind größer 1019cιrf3. Vorteilhafterweise ist für eine effektive Dotierung über dem Quantenwell p- und unter dem Quantenwell stark n-dotiert. Die Piezofelder werden durch die von den ionisierten Donatoren und Akzeptoren verursachten Felder aufgehoben.Alternatively, the barrier layers can be doped bipolar. Effective compensation can be achieved by acceptors and donors directly on the quantum well. The charge carrier densities are greater than 10 19 cm 3 . For an effective doping above the quantum well, p-doping and below the quantum well is advantageously heavily n-doped. The piezo fields are canceled by the fields caused by the ionized donors and acceptors.
Ein besonders bevorzugtes Ausführungsbeispiel ist ein Halbleiterchip mit einer aktiven Schicht, die eine GaN/GalnN- Multiquantenwell-Struktur aufweist, bei der zwischen GaN-A particularly preferred exemplary embodiment is a semiconductor chip with an active layer which has a GaN / GalnN multi-quantum well structure in which between GaN
Barriereschichten GalnN-Quantenfilme angeordnet sind und die auf einem SiC-Substrat hergestellt ist, und bei der sich zwischen dem Substrat und der aktiven Schicht noch weitere Schichten, insbesondere eine Puffer-Schicht, befinden können, wobei die GaN-Barriereschichten und/oder die GalnN-Barrier layers of GalnN quantum films are arranged and which is produced on an SiC substrate and in which further layers, in particular a buffer layer, can be located between the substrate and the active layer, the GaN barrier layers and / or the GalnN -
Quantenfilme elektrisch leitend dotiert, also n- oder p- dotiert sind. Die Dotierung orientiert sich an der Verspannung und nicht am Aufbau, d. h. z. B. an einer n- oder p-dotierten Pufferschicht.Quantum films are electrically doped, ie they are n- or p-doped. The doping is based on the tension and not on the structure, i. H. z. B. on an n- or p-doped buffer layer.
Bei einer dritten Lösungsmöglichkeit ist zwischen dem Substrat und der aktiven Schicht eine relaxierte Halbleiterschicht angeordnet, die die gleiche Gitterkonstante aufweist wie die Gitterkonstante im Quantenwell.In a third possible solution, a relaxed semiconductor layer is arranged between the substrate and the active layer, which has the same lattice constant as the lattice constant in the quantum well.
Ein besonders bevorzugtes, in Figur 2 schematisch dargestelltes Ausführungsbeispiel hierfür ist ein Halbleiterchip mit einer aktiven Schicht 4, die eine GaN/GalnN-Multiquantenwell-Struktur aufweist, bei der zwischen GaN-Barriereschichten 3,5 GalnN-Quantenfil e angeordnet sind und die auf einem SiC-Substrat 1 hergestellt ist, wobei sich zwischen dem Substrat 1 und der aktivenA particularly preferred exemplary embodiment of this, shown schematically in FIG. 2, is a Semiconductor chip with an active layer 4, which has a GaN / GalnN multi-quantum well structure, in which 3.5 GalnN quantum files are arranged between GaN barrier layers and which is produced on an SiC substrate 1, wherein between the substrate 1 and the active
Schicht 4 eine relaxierte InGaAlN-Schicht 6 befindet, die die gleiche Gitterkonstante aufweist wie die der Quantenwell. Die Barriereschichten 5, 6 bestehen aus AlGalnN.Layer 4 is a relaxed InGaAlN layer 6, which has the same lattice constant as that of the quantum well. The barrier layers 5, 6 consist of AlGalnN.
Die oben angegebenen Strukturen können für alle GalnN/GaN- basierten LEDs sowie für alle Strukturen angewandt werden, die starke interne Verspannungsfeider aufweisen. The structures given above can be used for all GalnN / GaN-based LEDs as well as for all structures that have strong internal stress fields.

Claims

Patentansprüche claims
1. Strahlungsemittierender Halbleiterchip, insbesondere auf der Basis von GaN/GalnN, bei dem eine aktive Schicht (4) eine Einfach- oder Mehrfach-Quantenwell-Struktur aufweist, dadurch gekennzeichnet, daß die aktive Schicht Quantenfilme mit einer Dicke < 3 nm aufweist.1. Radiation-emitting semiconductor chip, in particular based on GaN / GalnN, in which an active layer (4) has a single or multiple quantum well structure, characterized in that the active layer has quantum films with a thickness of <3 nm.
2. Strahlungsemittierender Halbleiterchip gemäß Anspruch 1, dadurch gekennzeichnet, daß die aktive Schicht (4) eine GaN/GalnN-Multiquantenwell- Struktur aufweist, bei der zwischen GaN-Barriereschichten (3,5) GalnN-Quantenfil e mit einer Dicke < 3nm angeordnet sind und die über einem SiC-Substrat (1) hergestellt ist.2. Radiation-emitting semiconductor chip according to claim 1, characterized in that the active layer (4) has a GaN / GalnN multi-quantum well structure, in which GaNN quantum files with a thickness of <3 nm are arranged between GaN barrier layers (3.5) and which is produced over an SiC substrate (1).
3. Strahlungsemittierender Halbleiterchip gemäß Anspruch 2, dadurch gekennzeichnet, daß die Quantenfilme und/oder die Barriereschichten elektrisch leitend dotiert sind.3. Radiation-emitting semiconductor chip according to claim 2, characterized in that the quantum films and / or the barrier layers are doped in an electrically conductive manner.
4. Strahlungsemittierender Halbleiterchip, insbesondere auf der Basis von GaN/GalnN, bei dem eine aktive Schicht (4) eine Einfach- oder Mehrfach-Quantenwell-Struktur aufweist, dadurch gekennzeichnet, daß die Quantenfilme der Einfach- oder Mehrfach-Quantenwell- Struktur elektrisch leitend dotiert sind.4. Radiation-emitting semiconductor chip, in particular based on GaN / GalnN, in which an active layer (4) has a single or multiple quantum well structure, characterized in that the quantum films of the single or multiple quantum well structure are electrically conductive are endowed.
5. Strahlungsemittierender Halbleiterchip, insbesondere auf der Basis von GaN/GalnN, bei dem die aktive Schicht (4) eine Einfach- oder Mehrfach-Quantenwell-Struktur aufweist, die zwischen Barriereschichten (3,5) angeordnet ist, dadurch gekennzeichnet, daß die Quantenfilme und/oder die Barriereschichten elektrisch leitend dotiert sind. 5. Radiation-emitting semiconductor chip, in particular based on GaN / GalnN, in which the active layer (4) has a single or multiple quantum well structure, which is arranged between barrier layers (3,5), characterized in that the quantum films and / or the barrier layers are doped in an electrically conductive manner.
6. Strahlungsemittierender Halbleiterchip, insbesondere auf der Basis von GaN/GalnN, bei dem eine aktive Schicht (4) eine Einfach- oder Mehrfach-Quantenwell-Struktur aufweist, dadurch gekennzeichnet, daß zwischen einem Substrat (1) und der aktiven Schicht (4) eine relaxierte Halbleiterschicht angeordnet, die die gleiche Gitterkonstante aufweist wie die Gitterkonstante im Quantenwell.6. Radiation-emitting semiconductor chip, in particular based on GaN / GalnN, in which an active layer (4) has a single or multiple quantum well structure, characterized in that between a substrate (1) and the active layer (4) a relaxed semiconductor layer is arranged, which has the same lattice constant as the lattice constant in the quantum well.
7. Strahlungsemittierender Halbleiterchip gemäß Anspruch 6, dadurch gekennzeichnet, daß die aktive Schicht (4) eine GaN/GalnN-Multiquantenwell- Struktur aufweist, bei der zwischen GaN-Barriereschichten (3,5) GalnN-Quantenfilme angeordnet sind und die auf einem SiC-Substrat (1) hergestellt ist, wobei sich zwischen dem Substrat (1) und der aktiven Schicht eine relaxierte InGaAlN-Schicht befindet. 7. Radiation-emitting semiconductor chip according to claim 6, characterized in that the active layer (4) has a GaN / GalnN multi-quantum well structure, in which GaNN quantum films are arranged between GaN barrier layers (3.5) and which are on a SiC Substrate (1) is produced, a relaxed InGaAlN layer being located between the substrate (1) and the active layer.
PCT/DE1999/003211 1998-10-05 1999-10-05 Radiation emitting semiconductor chip WO2000021143A1 (en)

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WO2001092428A1 (en) * 2000-06-02 2001-12-06 Erhard Kohn Heterostructure with rear-face donor doping
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WO2002097904A2 (en) * 2001-05-30 2002-12-05 Cree, Inc. Group iii nitride based light emitting diode structures with a quantum well and superlattice
WO2002097904A3 (en) * 2001-05-30 2003-02-20 Cree Inc Group iii nitride based light emitting diode structures with a quantum well and superlattice
WO2003012877A2 (en) * 2001-07-20 2003-02-13 Erhard Kohn Field effect transistor
WO2003012877A3 (en) * 2001-07-20 2003-09-18 Erhard Kohn Field effect transistor
US8772757B2 (en) 2005-05-27 2014-07-08 Cree, Inc. Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
US9041139B2 (en) 2007-01-19 2015-05-26 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US9012937B2 (en) 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
WO2011098799A2 (en) 2010-02-10 2011-08-18 Pulmagen Therapeutics (Inflammation) Limited Respiratory disease treatment
US20170213868A1 (en) * 2014-04-01 2017-07-27 Centre National De La Recherche Scientifique Semiconducting pixel, matrix of such pixels, semiconducting structure for the production of such pixels and their methods of fabrication
US10103195B2 (en) * 2014-04-01 2018-10-16 Centre National De La Recherche Scientifique Semiconducting pixel, matrix of such pixels, semiconducting structure for the production of such pixels and their methods of fabrication

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