WO2000028586A2 - Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad - Google Patents
Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad Download PDFInfo
- Publication number
- WO2000028586A2 WO2000028586A2 PCT/US1999/027034 US9927034W WO0028586A2 WO 2000028586 A2 WO2000028586 A2 WO 2000028586A2 US 9927034 W US9927034 W US 9927034W WO 0028586 A2 WO0028586 A2 WO 0028586A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- chemical
- mechanical polishing
- polishing process
- copper
- ammonium
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Definitions
- This invention relates to copper chemical-mechanical polishing processes using fixed abrasive polishing pads, and to copper layer chemical-mechanical polishing solutions specifically adapted for chemical-mechanical polishing with fixed abrasive pads.
- CMP chemical-mechanical polishing means
- polishing and removal occurs by a combination of both chemical and mechanical polishing action.
- CMP utilizes a combination of solid abrasives and chemicals to achieve the combination polishing action.
- One type of chemical-mechanical polishing utilizes a slurry comprising very hard, solid abrasive particles suspended in a chemical solution. The slurry is interposed between a pad and a wafer, with both typically being caused to rotate, and material removed from the wafer by both chemical and mechanical action.
- Another form of CMP provides abrasive material embedded within the surface of the polishing pad, and is commonly referred to as fixed abrasive CMP.
- Fig. 1 is a diagrammatic view of a prior art chemical-mechanical polishing apparatus used in accordance with an aspect of the invention.
- a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad comprises a copper oxidizing component present at from about 1 % to 15% by volume, a copper corrosion inhibitor present at from about 0.01 % to 2% by weight, and a pH of less than or equal to 7.0.
- a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad comprises a copper oxidizing component present at from about 0.1 % to 15% by volume, a copper complexing agent present at from about 0.1 % to 15% by volume, and a pH of greater than or equal to 7.0.
- a semiconductor wafer having an outer layer or region comprising copper at greater than or equal to 50% molar is polished with improved solutions using fixed abrasive pads.
- the invention was principally predicated upon the chemical-mechanical polishing of copper layers consisting essentially of elemental copper. However, the invention is anticipated to have applicability to polishing any copper layers having greater than or equal to 50% molar copper content, including such layers consisting essentially of copper alloys.
- a wafer having such a layer is positioned within a suitable chemical-mechanical polishing apparatus comprising a fixed abrasive chemical-mechanical polishing pad.
- Any suitable apparatus is usable, such as by way of example only, those apparatus which rotate/revolve both a fixed abrasive pad and the wafer, those apparatus which rotate/move a fixed abrasive pad and not the wafer, those apparatus which rotate/revolve the wafer and not a fixed abrasive pad, etc.
- Fixed abrasive pads can be purchased from many suppliers, such as the 3M Company of St. Paul, Minnesota, U.S.A.
- a copper layer chemical-mechanical polishing solution in accordance with the invention is provided intermediate the pad and the wafer utilizing the polishing equipment. In one implantation, the solution comprises a copper oxidizing component present at from about 0.5% to 15% by volume, a copper corrosion inhibitor present at from about 0.01 % to 2% by weight, and a solution pH of less than or equal to 7.0.
- the solution can also comprise a surfactant, for example present at a concentration of from 1 % to 10% by volume.
- a surfactant include polyethylene glycol, polyoxyethylene ether, glycerol, polypropylene glycol, polyoxyethylene lauryl ether, polyoxyethylene cetyl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, and mixtures thereof.
- the solution might further comprise thickeners to achieve desired viscosity, with an example preferred range being from about 10 centipoise to 20 centipoise at room temperature.
- thickeners examples include Polyox available from Union Carbide of
- the solution is most ideally provided to be void of solid abrasive material, at least prior to starting chemical-mechanical polishing. Once polishing commences with the fixed abrasive pad, it is possible that some abrasive material from the pad will break off of the pad and find its way into solution, but ideally the solution is essentially abrasive-free in accordance with the most preferred aspects of the invention.
- the copper comprising layer is chemical-mechanical polished with the fixed abrasive pad.
- copper from the layer being polished is oxidized with a solution comprising a copper corrosion inhibitor present at from about 0.01 % to 2% by weight, and having a pH of less than or equal to 7.0.
- a solution comprising a copper corrosion inhibitor present at from about 0.01 % to 2% by weight, and having a pH of less than or equal to 7.0.
- copper and copper oxide from the copper comprising layer is polished with a fixed abrasive chemical-mechanical polishing pad.
- the oxidized copper might oxidize on the layer prior to removal, or be polished/etched away from the layer as copper and be oxidized and dissolved in solution thereafter. Both of these actions might also occur, with one or the other possibly predominating.
- Solution components during polishing preferably constitute those as described above, and again in significant consideration is ideally void of solid abrasive material. Polishing preferably is conducted at atmospheric pressure and anywhere from 40°F up to 145
- a chemical-mechanical polishing process and solution therefor comprises a copper oxidizing component present at from 0.1 % to 15% by volume, a copper complexing agent present at from about 0.1 % to 15% by volume, and a pH of greater than or equal to 7.0.
- a copper oxidizing component present at from 0.1 % to 15% by volume
- a copper complexing agent present at from about 0.1 % to 15% by volume
- a pH of greater than or equal to 7.0 Some exemplary copper oxidizing components in accordance with this aspect include those as described above.
- a preferred complexing agent comprises ammonia.
- Such can be, for example, derived from a material in the solution selected from the group consisting of ammonium hydroxide, diammonium hydrogen phosphate, ammonium dihydrogen phosphate, ammonium acetate, tribasic ammonium citrate, dibasic ammonium citrate, ammonium oxalate, ammonium carbamate and mixtures thereof.
- the solution most preferably comprises a pH of less than or equal to 10.0, and also includes a pH buffer which in some cases can be the same as the complexing agent.
- Example slurry abrasives of the prior art in the chemical mechanical polishing of copper include SK ⁇ , Ce ⁇ 2 and AI2O3. In certain desired polishing actions, one might be more favored than another. Further, different pH ranges using the different abrasives might be desired for each abrasives. Yet in prior art chemical-mechanical polishing solutions and process, it has been found that the abrasives do not remain well dispersed throughout the solution at certain desired pH's. For example, Si ⁇ 2 will not stay well dispersed in solution if pH falls below 4. Ce ⁇ 2 will not stay well dispersed in solution at a neutral pH around 7. A ⁇ O ⁇ will not stay well dispersed in solution if pH rises too high.
- slurry temperature during polish can be maintained at or below room temperature (further preferably at or below 65°F) where the abrasive is fixed on the pad and agglomeration of abrasives within the slurry is not a concern. Polishing in all embodiments preferably is conducted at atmospheric pressure and anywhere from 40°F up to 145°F, although other conditions are of course possible.
- planarizing machine 10 is used for chemical-mechanical polishing a semiconductor wafer 12.
- Planarizing machine 10 has a support table 14 with a top panel 16 at a work station where an operative portion (A) of a planarizing pad 40 is positioned.
- the top-half panel 16 is generally a rigid plate to provide a flat, solid surface to which a particular section of planarizing pad 40 may be secured during polishing.
- Planarizing machine 10 also has a plurality of rollers to guide, position and hold planarizing pad 40 over top panel 16.
- the rollers include a supply roller 20, first and second idler rollers 21a and 21b, first and second guide rollers 22a and 22b, and a take-up roller 23.
- the supply roller 20 carries an unused or pre-operative portion of the planarizing pad 40
- take-up roller carries a used or post-operative portion of planarizing pad 40.
- First idler roller 21a and first guide roller 22a stretch planarizing pad 40 over top panel 16 to hold the planarizing pad 40 stationary during operation.
- Planarizing pad 40 in accordance with the invention preferably comprises a fixed abrasive pad, such as described above, and having a length greater than a maximum diameter of the wafers being polished.
- a motor (not shown) drives at least one of supply roller 20 and take-up roller 23 to sequentially advance the planarizing pad 40 across the top-panel 16. As such, clean pre-operative sections of the planarizing pad 40 may be quickly substituted for used sections to provide a consistent surface for planarizing and/or cleaning the substrate.
- the web-format planarizing machine 10 has a carrier assembly 30 that controls and protects wafer 12 during polishing.
- Carrier assembly 30 generally has a substrate holder 32 to pick up, hold and release wafer 12 at appropriate stages of the polishing cycle.
- a plurality of nozzles 33 attached to substrate holder 32 dispense a planarizing solution 44 in accordance with the invention onto a planarizing surface 42 of planarizing pad 40.
- Carrier assembly 30 also generally has a support gantry 34 carrying a drive assembly 35 that translates along gantry 34.
- Drive assembly 35 generally has an actuator 36, a drive shaft 37 coupled to the actuator 36, and an arm 38 projecting from drive shaft 37.
- Arm 38 carries substrate holder 32 via another shaft 39 such that drive assembly 35 orbits substrate holder 32 about an axis B-B offset from a center point C-C of wafer 12.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000581685A JP2003535452A (en) | 1998-11-10 | 1999-11-10 | Copper chemical mechanical polishing method using fixed polishing pad and copper layer chemical mechanical polishing solution for chemical mechanical polishing using fixed polishing pad |
AU17245/00A AU1724500A (en) | 1998-11-10 | 1999-11-10 | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adaptedfor chemical-mechanical polishing with a fixed abrasive pad |
EP99960349A EP1138069A2 (en) | 1998-11-10 | 1999-11-10 | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/189,896 | 1998-11-10 | ||
US09/189,896 US6276996B1 (en) | 1998-11-10 | 1998-11-10 | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
Publications (2)
Publication Number | Publication Date |
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WO2000028586A2 true WO2000028586A2 (en) | 2000-05-18 |
WO2000028586A3 WO2000028586A3 (en) | 2000-10-12 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/027034 WO2000028586A2 (en) | 1998-11-10 | 1999-11-10 | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
Country Status (6)
Country | Link |
---|---|
US (2) | US6276996B1 (en) |
EP (1) | EP1138069A2 (en) |
JP (1) | JP2003535452A (en) |
KR (1) | KR100444812B1 (en) |
AU (1) | AU1724500A (en) |
WO (1) | WO2000028586A2 (en) |
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US8048756B2 (en) | 2002-08-29 | 2011-11-01 | Micron Technology, Inc. | Method for removing metal layers formed outside an aperture of a BPSG layer utilizing multiple etching processes including electrochemical-mechanical polishing |
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Also Published As
Publication number | Publication date |
---|---|
JP2003535452A (en) | 2003-11-25 |
US20010016469A1 (en) | 2001-08-23 |
WO2000028586A3 (en) | 2000-10-12 |
KR20010080972A (en) | 2001-08-25 |
KR100444812B1 (en) | 2004-08-21 |
US6276996B1 (en) | 2001-08-21 |
EP1138069A2 (en) | 2001-10-04 |
US6676484B2 (en) | 2004-01-13 |
AU1724500A (en) | 2000-05-29 |
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