WO2000028586A3 - Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad - Google Patents

Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad Download PDF

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Publication number
WO2000028586A3
WO2000028586A3 PCT/US1999/027034 US9927034W WO0028586A3 WO 2000028586 A3 WO2000028586 A3 WO 2000028586A3 US 9927034 W US9927034 W US 9927034W WO 0028586 A3 WO0028586 A3 WO 0028586A3
Authority
WO
WIPO (PCT)
Prior art keywords
chemical
mechanical polishing
copper
fixed abrasive
pad
Prior art date
Application number
PCT/US1999/027034
Other languages
French (fr)
Other versions
WO2000028586A2 (en
Inventor
Dinesh Chopra
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to EP99960349A priority Critical patent/EP1138069A2/en
Priority to JP2000581685A priority patent/JP2003535452A/en
Priority to AU17245/00A priority patent/AU1724500A/en
Publication of WO2000028586A2 publication Critical patent/WO2000028586A2/en
Publication of WO2000028586A3 publication Critical patent/WO2000028586A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Abstract

The invention comprises copper chemical-mechanical polishing processes using fixed abrasive polishing pads, and copper layer chemical-mechanical polishing solutions specifically adapted for chemical-mechanical polishing with fixed abrasive pads. In one implementation, processes are described for pH's of 7.0 or greater. In one implementation, processes are described for pH's of 7.0 or less. In one implementation, a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad comprises a copper oxidizing component present at from about 1 % to 15 % by volume, a copper corrosion inhibitor present at from about 0.01 % to 2 % by weight, and a pH of less than or equal to 7.0. In one implementation, a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad comprises a copper oxidizing component present at from about 0.1 % to 15 % by volume, a copper complexing agent present at from about 0.1 % to 15 % by volume, and a pH of greater than or equal to 7.0.
PCT/US1999/027034 1998-11-10 1999-11-10 Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad WO2000028586A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP99960349A EP1138069A2 (en) 1998-11-10 1999-11-10 Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
JP2000581685A JP2003535452A (en) 1998-11-10 1999-11-10 Copper chemical mechanical polishing method using fixed polishing pad and copper layer chemical mechanical polishing solution for chemical mechanical polishing using fixed polishing pad
AU17245/00A AU1724500A (en) 1998-11-10 1999-11-10 Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adaptedfor chemical-mechanical polishing with a fixed abrasive pad

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/189,896 1998-11-10
US09/189,896 US6276996B1 (en) 1998-11-10 1998-11-10 Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad

Publications (2)

Publication Number Publication Date
WO2000028586A2 WO2000028586A2 (en) 2000-05-18
WO2000028586A3 true WO2000028586A3 (en) 2000-10-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/027034 WO2000028586A2 (en) 1998-11-10 1999-11-10 Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad

Country Status (6)

Country Link
US (2) US6276996B1 (en)
EP (1) EP1138069A2 (en)
JP (1) JP2003535452A (en)
KR (1) KR100444812B1 (en)
AU (1) AU1724500A (en)
WO (1) WO2000028586A2 (en)

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US6676484B2 (en) 2004-01-13
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