WO2000041325A1 - Integrated transmitter and receiver components for a dual-band transceiver - Google Patents

Integrated transmitter and receiver components for a dual-band transceiver Download PDF

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Publication number
WO2000041325A1
WO2000041325A1 PCT/US1999/027227 US9927227W WO0041325A1 WO 2000041325 A1 WO2000041325 A1 WO 2000041325A1 US 9927227 W US9927227 W US 9927227W WO 0041325 A1 WO0041325 A1 WO 0041325A1
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WO
WIPO (PCT)
Prior art keywords
frequency
stage
stages
substrate
low
Prior art date
Application number
PCT/US1999/027227
Other languages
French (fr)
Inventor
Antonio Montalvo
Original Assignee
Ericsson Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Inc. filed Critical Ericsson Inc.
Priority to JP2000592960A priority Critical patent/JP2002534898A/en
Priority to EP99959017A priority patent/EP1142142B1/en
Priority to AT99959017T priority patent/ATE286325T1/en
Priority to DE69923000T priority patent/DE69923000D1/en
Priority to AU16274/00A priority patent/AU1627400A/en
Priority to IL14376499A priority patent/IL143764A0/en
Priority to BR9916707-7A priority patent/BR9916707A/en
Publication of WO2000041325A1 publication Critical patent/WO2000041325A1/en
Priority to HK02103972.4A priority patent/HK1042387B/en

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H04B1/0057—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using diplexing or multiplexing filters for selecting the desired band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H04B1/006—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using switches for selecting the desired band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0067—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with one or more circuit blocks in common for different bands
    • H04B1/0082—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with one or more circuit blocks in common for different bands with a common local oscillator for more than one band

Definitions

  • This invention relates to the field of dual-band radios, and, more specifi- cally, to the integration of components of dual-band transceivers.
  • wireless telephones also called mobile phones, cell phones, mobile stations, etc.
  • One approach to reducing the size and cost of the wireless telephone is to increase the level of component integration.
  • the receiver front end (including a low noise amplifier) and transmitter power amplifiers have not been integrated because the transmitter's power amplifier may generate interference at the receiver.
  • the integration of the transmitter and receiver amplifiers has not been achieved despite the fact that there are advantages for having the low-noise receiver amplifier built on the same substrate as the transmitter power amplifier to optimize the common characteristics.
  • a transceiver front end that selectively transmits and receives on either of a first frequency and a second frequency wherein the front end comprises an integrated circuit having a power amplifier configured to amplify signals for transmission on a first frequency and a low-noise amplifier configured to amplify signals received on the second frequency.
  • the transceiver further includes a local oscillator and the integrated circuit includes a down-converter connected to the low-noise amplifier and the local oscillator that converts a signal on the second frequency to an intermediate frequency.
  • the integrated circuit is a first integrated circuit and the transceiver further includes a second integrated circuit having a power amplifier configured to amplify signals for transmission on the second frequency and a low-noise amplifier configured to amplify signals received on the first frequency.
  • the second integrated circuit may also include a second down-converter connected to the low-noise amplifier and the local oscillator.
  • either or both of the first and second integrated circuits may include a substrate of gallium arsenide (GaAs). The first frequency and the second frequency may be different frequencies.
  • GaAs gallium arsenide
  • a transceiver that selectively transmits and receives on either the first frequency and the second frequency band
  • the radio has a multi-stage first frequency band transmitter, a multi-stage first frequency band receiver, a multi-stage second frequency band transmitter, and a multi-stage second frequency band receiver.
  • the transceiver includes a first substrate having one or more stages of the multistage first frequency band transmitter and one or more stages of the second multi-frequency band receiver and a second substrate having one or more stages of the multi-stage second frequency band transmitter and one or more stages of the multi-stage first frequency band receiver.
  • a first of the stages of the multi-stage first frequency transmitter comprises a power amplifier and the one or more stages of the multi-stage first frequency band transmitter comprises the power amplifier.
  • the first of the stages of the multi-stage second frequency transmitters comprises a power amplifier and one or more of the stages of the multi-stage second frequency band transmitter on the first substrate comprise a power amplifier.
  • both the first frequency and the second frequency receivers may include a mixer.
  • a process for fabricating a dual-band transceiver front end wherein the transceiver has a multi-stage first frequency transmitter, a multi-stage first frequency receiver, a multi-stage second frequency transmitter and a multi-stage second frequency receiver.
  • the process includes providing a substrate, fabricating one or more stages of the multi-stage first frequency transmitter on the substrate and fabricating one or more stages of the multi-stage second frequency receiver on the same substrate.
  • Fabricating one or more of the stages of the first frequency transmitter may comprise fabricating a power amplifier on the substrate and fabricating one or more stages of a multi-stage second frequency receiver com- prises fabricating a low-noise amplifier on the substrate.
  • the process may further include fabricating a down-converter on the substrate connected to the low-noise amplifier.
  • the substrate may be a first substrate and the process further includes providing a second substrate, fabricating one or more stages of multiple stage second frequency transmitter on the second substrate and fabricating one or more stages of the multi-stage first frequency receiver on the substrate.
  • the steps of fabricating on this second substrate may include fabricating a power amplifier, fabricating a low-noise amplifier and fabricating a down-converter.
  • Fig. 1 is a block diagram of a dual-band wireless telephone where an exemplary embodiment of this invention may be practiced
  • Fig. 2 is a block diagram of a first exemplary embodiment of this invention wherein the front end of the high-band receiver and the front end of the low-band power transmitter are integrated onto one substrate and the front end of the low- band receiver and the front end of the high-band power transmitter are integrated onto a second substrate; and
  • Fig. 3 illustrates a second block diagram of a further exemplary embodiment wherein the front end of the receivers only include the low-noise amplifiers integrated onto the substrates with the front end of the transmitters.
  • Fig. 1 is a block diagram of a dual-band wireless telephone 10 that employs an exemplary embodiment of this invention.
  • Wireless telephone 10 includes an antenna 12 for sending and receiving radio frequency signals.
  • Antenna 12 is connected to a duplexor 14, which includes a plurality of filters, as known in the art, that permits the wireless telephone 10 to transmit and receive on the same antenna 12.
  • the duplexor 14 is connected to a transceiver comprising a multi-stage receiver 16 and a multi-stage transmitter 18.
  • Multi-stage receiver 16 includes stages for amplifying the incoming signal, down-converting to an inter- mediate frequency, demodulating and decoding (if necessary).
  • multi-stage receiver 16 include a high-band front end 19 and a low-band front end 20.
  • both high-band front end 19 and low-band front end 20 include at least the amplification stage and may advantageously include the down-converting stage.
  • a radio frequency signal on either band is received at antenna 12, sent through duplexor 14 and to the appropriate high-band 19 or low-band 20 front end.
  • the two front ends 19 and 20 amplify and down-convert the radio frequency signals by mixing their respective signals with a frequency generated by local oscillator 22 and then filtered in an intermediate frequency filter (not shown but well known in the art).
  • Demodulator 24 receives the signal from both high-band front end 19 and low-band front end 20 at the intermediate frequency and demodulates it. There may be other stages, such as decoding, deinterleaving, etc., as known in the art.
  • the signal is separated into control channels for control messages and a traffic channel for sound or data. Sound is delivered to speaker 26.
  • Receiver 16 delivers messages from the control channel to a processor 28.
  • Processor 28 controls the functionality of wireless telephone 10 responsive to messages on the control channel using programs and data stored in memory 30. Processor 28 also controls the operation of wireless telephone 10 responsive to input from the user interface 32.
  • the user interface 32 includes a keypad 34 as a user input device and a display 36 to convey information to the user. Other devices are frequently included in user interface 32, such as lights and special purpose buttons 38.
  • the processor 28 controls the operation of transmitter 18 and receiver 16 over control lines 39 and 40, respectively, responsive to control messages and user input.
  • Microphone 42 receives sound input, converts the input into analog signals and delivers the analog signals to multi-stage transmitter 18.
  • the signals from microphone 42 are received at a transmitter interface 44, which determines the frequency band that the mobile station is broadcasting on.
  • the signal is delivered to either a high-band modulator 46 or a low-band modulator 48, which encode and/or modulate the signal according to the standard under which it is operating. For example, if the low-band is an analog system, then low-band modulator 48 modulates the signal onto its assigned frequency.
  • the high-band modulator 46 converts the analog signal into digital data, encodes the data with error detection and correction information and multiplexes the data with control messages from processor 28.
  • the combined data stream is modulated onto its assigned frequency.
  • the resultant signals from high-band modulator 46 and low-band modulator 48 are delivered to high-band transmitter front end 50 and low-band transmitter front end 52, respectively.
  • the high-band transmitter front end 50 and the low-band transmitter front end 52 stages amplify the signal for transmission, in this exemplary embodiment.
  • the resultant radio signal is broadcast to the wireless network through duplexor 14 and antenna 12.
  • both substrates 200 and 202 are provided.
  • both substrates 200 and 202 are constructed of gallium arsinide (GaAs), which optimizes amplifier performance. Of course, other materials may be used.
  • GaAs gallium arsinide
  • the front end stages of multistage transmitters and receivers are then fabricated on the substrates 200 and 202.
  • the low-band transmitter front end 204 and the high-band receiver front end 206 are fabricated on sub- strate 200, with the low-band transmitter front end 204, the high-band receiver front end 206 and substrate 200 being formed together as an integrated circuit component 207.
  • the high-band transmitter front end 208 and low-band receiver front end 210 are fabricated on substrate 202 to produce a similar integrated circuit component 211.
  • the low-band transmitter front end 204 includes two amplifiers 222 and 224 and a capacitor 226, as known in the art.
  • the high-band transmitter front end 208 also includes two amplifiers 228, 230 and a capacitor 232.
  • the high-band receiver front end 206 includes the low-noise amplifier stage 234 and the mixer stage 236.
  • the low-band receiver front end 210 also includes the low-noise amplifier stage 238 and the mixer stage 240.
  • the low-noise amplifier stages 234 and 238 are connected to filters 250 and 252, respectively, which provide frequency band and image filtering, as is known in the art.
  • Mixers 236 and 240 provide the down-conversion stage by mixing the radio frequency signal with a frequency from local oscillator 22. Both of the signals are filtered in the intermediate frequency filter 256, which provides the signal on the intermediate frequency to the demodulator 24 (Fig. 1).
  • the exemplary embodiment of Fig. 2 has several advantages.
  • the die area consumed by the receiver front end 206, 208 will be very small compared to the large power transistors 222, 224, 228 and 230; therefore, the incremental cost of adding the receiver front end 206, 208 will be small.
  • the total area of the transceiver is reduced when the number of integrated circuit chips are reduced. Additionally, performance of the transceiver's receiver front end 206 and 208 is improved.
  • a second embodiment of this invention is shown.
  • the mixers 236 and 240 may be part of the integrated circuits of the receiver, transmitter or any other logical portion of the dual-band radio.
  • the pin count is not increased significantly (only four extra pin should be needed: low-noise amplifier in, low-noise amplifier out, power for the amplifier and enable).
  • the disadvantage is that the mixers must be placed somewhere else.
  • high band and low-band are, of course, relative terms, and may be any frequency used for communication and may be the same frequency.
  • the high-band may be CDMA or TDMA and the low-band may be ana- log.

Abstract

A transceiver of a dual-band radio is provided that selectively transmits and receives on either of a first frequency and a second frequency wherein the transceiver includes an integrated circuit having a power amplifier configured to amplify signals for transmission on a first frequency, and a low-noise amplifier configured to amplify signals received on the second frequency. The transceiver may further include a second integrated circuit having a power amplifier configured to amplify signals for transmission on a second frequency, and a low-noise amplifier configured to amplify signals received on the first frequency.

Description

INTEGRATED TRANSMITTER AND RECEIVER COMPONENTS FOR A DUAL-BAND TRANSCEIVER
FIELD OF THE INVENTION
This invention relates to the field of dual-band radios, and, more specifi- cally, to the integration of components of dual-band transceivers.
BACKGROUND OF THE INVENTION
In the current market for wireless telephones (also called mobile phones, cell phones, mobile stations, etc.), there is a strong desire to reduce size and cost of the wireless telephone while simultaneously improving performance. One approach to reducing the size and cost of the wireless telephone is to increase the level of component integration. In the current art, however, the receiver front end (including a low noise amplifier) and transmitter power amplifiers have not been integrated because the transmitter's power amplifier may generate interference at the receiver. The integration of the transmitter and receiver amplifiers has not been achieved despite the fact that there are advantages for having the low-noise receiver amplifier built on the same substrate as the transmitter power amplifier to optimize the common characteristics.
SUMMARY OF THE INVENTION
In accordance with one aspect of this invention, a transceiver front end is provided that selectively transmits and receives on either of a first frequency and a second frequency wherein the front end comprises an integrated circuit having a power amplifier configured to amplify signals for transmission on a first frequency and a low-noise amplifier configured to amplify signals received on the second frequency. In accordance with another aspect of this invention, the transceiver further includes a local oscillator and the integrated circuit includes a down-converter connected to the low-noise amplifier and the local oscillator that converts a signal on the second frequency to an intermediate frequency. ln accordance with a further aspect of this invention, the integrated circuit is a first integrated circuit and the transceiver further includes a second integrated circuit having a power amplifier configured to amplify signals for transmission on the second frequency and a low-noise amplifier configured to amplify signals received on the first frequency. The second integrated circuit may also include a second down-converter connected to the low-noise amplifier and the local oscillator. Further, either or both of the first and second integrated circuits may include a substrate of gallium arsenide (GaAs). The first frequency and the second frequency may be different frequencies. In accordance with another aspect of this invention, a transceiver that selectively transmits and receives on either the first frequency and the second frequency band is disclosed wherein the radio has a multi-stage first frequency band transmitter, a multi-stage first frequency band receiver, a multi-stage second frequency band transmitter, and a multi-stage second frequency band receiver. The transceiver includes a first substrate having one or more stages of the multistage first frequency band transmitter and one or more stages of the second multi-frequency band receiver and a second substrate having one or more stages of the multi-stage second frequency band transmitter and one or more stages of the multi-stage first frequency band receiver. Further, a first of the stages of the multi-stage first frequency transmitter comprises a power amplifier and the one or more stages of the multi-stage first frequency band transmitter comprises the power amplifier. Additionally, the first of the stages of the multi-stage second frequency transmitters comprises a power amplifier and one or more of the stages of the multi-stage second frequency band transmitter on the first substrate comprise a power amplifier. Further, both the first frequency and the second frequency receivers may include a mixer.
In accordance with another aspect of this invention, a process for fabricating a dual-band transceiver front end is disclosed, wherein the transceiver has a multi-stage first frequency transmitter, a multi-stage first frequency receiver, a multi-stage second frequency transmitter and a multi-stage second frequency receiver. The process includes providing a substrate, fabricating one or more stages of the multi-stage first frequency transmitter on the substrate and fabricating one or more stages of the multi-stage second frequency receiver on the same substrate. Fabricating one or more of the stages of the first frequency transmitter may comprise fabricating a power amplifier on the substrate and fabricating one or more stages of a multi-stage second frequency receiver com- prises fabricating a low-noise amplifier on the substrate. The process may further include fabricating a down-converter on the substrate connected to the low-noise amplifier.
In accordance with a further aspect of this invention, the substrate may be a first substrate and the process further includes providing a second substrate, fabricating one or more stages of multiple stage second frequency transmitter on the second substrate and fabricating one or more stages of the multi-stage first frequency receiver on the substrate. The steps of fabricating on this second substrate may include fabricating a power amplifier, fabricating a low-noise amplifier and fabricating a down-converter.
BRIEF DESCRIPTION OF THE DRAWINGS
A more complete understanding of this invention may be obtained from a consideration of the following detailed description in conjunction with the drawings in which:
Fig. 1 is a block diagram of a dual-band wireless telephone where an exemplary embodiment of this invention may be practiced;
Fig. 2 is a block diagram of a first exemplary embodiment of this invention wherein the front end of the high-band receiver and the front end of the low-band power transmitter are integrated onto one substrate and the front end of the low- band receiver and the front end of the high-band power transmitter are integrated onto a second substrate; and
Fig. 3 illustrates a second block diagram of a further exemplary embodiment wherein the front end of the receivers only include the low-noise amplifiers integrated onto the substrates with the front end of the transmitters. DETAILED DESCRIPTION
Fig. 1 is a block diagram of a dual-band wireless telephone 10 that employs an exemplary embodiment of this invention. Wireless telephone 10 includes an antenna 12 for sending and receiving radio frequency signals. Antenna 12 is connected to a duplexor 14, which includes a plurality of filters, as known in the art, that permits the wireless telephone 10 to transmit and receive on the same antenna 12. The duplexor 14 is connected to a transceiver comprising a multi-stage receiver 16 and a multi-stage transmitter 18. Multi-stage receiver 16 includes stages for amplifying the incoming signal, down-converting to an inter- mediate frequency, demodulating and decoding (if necessary). In this exemplary embodiment of this invention, multi-stage receiver 16 include a high-band front end 19 and a low-band front end 20. As will be described further, below, both high-band front end 19 and low-band front end 20 include at least the amplification stage and may advantageously include the down-converting stage. A radio frequency signal on either band is received at antenna 12, sent through duplexor 14 and to the appropriate high-band 19 or low-band 20 front end. The two front ends 19 and 20 amplify and down-convert the radio frequency signals by mixing their respective signals with a frequency generated by local oscillator 22 and then filtered in an intermediate frequency filter (not shown but well known in the art). Demodulator 24 receives the signal from both high-band front end 19 and low-band front end 20 at the intermediate frequency and demodulates it. There may be other stages, such as decoding, deinterleaving, etc., as known in the art. The signal is separated into control channels for control messages and a traffic channel for sound or data. Sound is delivered to speaker 26. Receiver 16 delivers messages from the control channel to a processor 28.
Processor 28 controls the functionality of wireless telephone 10 responsive to messages on the control channel using programs and data stored in memory 30. Processor 28 also controls the operation of wireless telephone 10 responsive to input from the user interface 32. The user interface 32 includes a keypad 34 as a user input device and a display 36 to convey information to the user. Other devices are frequently included in user interface 32, such as lights and special purpose buttons 38. The processor 28 controls the operation of transmitter 18 and receiver 16 over control lines 39 and 40, respectively, responsive to control messages and user input.
Microphone 42 receives sound input, converts the input into analog signals and delivers the analog signals to multi-stage transmitter 18. The signals from microphone 42 are received at a transmitter interface 44, which determines the frequency band that the mobile station is broadcasting on. The signal is delivered to either a high-band modulator 46 or a low-band modulator 48, which encode and/or modulate the signal according to the standard under which it is operating. For example, if the low-band is an analog system, then low-band modulator 48 modulates the signal onto its assigned frequency. On the other hand, if the high- band is a time division, multiple access (TDMA) or GSM system, the high-band modulator 46 converts the analog signal into digital data, encodes the data with error detection and correction information and multiplexes the data with control messages from processor 28. The combined data stream is modulated onto its assigned frequency.
The resultant signals from high-band modulator 46 and low-band modulator 48 are delivered to high-band transmitter front end 50 and low-band transmitter front end 52, respectively. The high-band transmitter front end 50 and the low-band transmitter front end 52 stages amplify the signal for transmission, in this exemplary embodiment. The resultant radio signal is broadcast to the wireless network through duplexor 14 and antenna 12.
Turning now to Fig. 2, a first embodiment of the fabrication of an integrated circuit according to an embodiment of this invention is shown. Two substrates 200, 202 are provided. In this exemplary embodiment, both substrates 200 and 202 are constructed of gallium arsinide (GaAs), which optimizes amplifier performance. Of course, other materials may be used. The front end stages of multistage transmitters and receivers are then fabricated on the substrates 200 and 202. In this exemplary embodiment of this invention, the low-band transmitter front end 204 and the high-band receiver front end 206 are fabricated on sub- strate 200, with the low-band transmitter front end 204, the high-band receiver front end 206 and substrate 200 being formed together as an integrated circuit component 207. The high-band transmitter front end 208 and low-band receiver front end 210 are fabricated on substrate 202 to produce a similar integrated circuit component 211. In this exemplary embodiment, the low-band transmitter front end 204 includes two amplifiers 222 and 224 and a capacitor 226, as known in the art. The high-band transmitter front end 208 also includes two amplifiers 228, 230 and a capacitor 232. The high-band receiver front end 206 includes the low-noise amplifier stage 234 and the mixer stage 236. The low-band receiver front end 210 also includes the low-noise amplifier stage 238 and the mixer stage 240. By fabricating stages of the transmitter of one frequency band with the receiver of the other, there is no interference from the power amplifier at the receiver because they will not operate at the same time.
The low-noise amplifier stages 234 and 238 are connected to filters 250 and 252, respectively, which provide frequency band and image filtering, as is known in the art. Mixers 236 and 240 provide the down-conversion stage by mixing the radio frequency signal with a frequency from local oscillator 22. Both of the signals are filtered in the intermediate frequency filter 256, which provides the signal on the intermediate frequency to the demodulator 24 (Fig. 1).
The exemplary embodiment of Fig. 2 has several advantages. First, combining the transmitter power amplifiers 204, 208 with the receiver front end 206, 210 reduces costs by reducing the number of integrated circuit chips in the transceiver. The die area consumed by the receiver front end 206, 208 will be very small compared to the large power transistors 222, 224, 228 and 230; therefore, the incremental cost of adding the receiver front end 206, 208 will be small. The total area of the transceiver is reduced when the number of integrated circuit chips are reduced. Additionally, performance of the transceiver's receiver front end 206 and 208 is improved. There is currently a trend toward implementing receiver front ends in silicon rather than GaAs, despite the fact that GaAs provides better relative performance (in noise figure, gain and current). Combining the low-noise amplifier with the power transistors allows exploiting the improved performance of GaAs while minimizing the added cost. A disadvantage, how- ever, is that integrated circuit 207, 211 will have a high pin (connector) count since there must be pins for the image filters 250, 252 and local oscillator 22 input. A high pin count may degrade the performance of the transmitter front end 204, 208.
Turning now to Fig. 3, a second embodiment of this invention is shown. According to this embodiment, only the low-noise amplifier stages 234, 238 of the receivers are included on substrates 200 and 202 to produce preformed component sub-assemblies. In this embodiment, the mixers 236 and 240 may be part of the integrated circuits of the receiver, transmitter or any other logical portion of the dual-band radio. In this embodiment, the pin count is not increased significantly (only four extra pin should be needed: low-noise amplifier in, low-noise amplifier out, power for the amplifier and enable). The disadvantage is that the mixers must be placed somewhere else. This disadvantage is mitigated by the good low-noise amplifier performance attainable with GaAs (more low noise amplifier gain and less low noise amplifier noise reduces the performance required in the mixer). Thus, the potential for less expensive integrated circuits is made possible, which circuits may be used in a transceiver that has both a high-band and a low- band. Of course, high band and low-band are, of course, relative terms, and may be any frequency used for communication and may be the same frequency. For example, the high-band may be CDMA or TDMA and the low-band may be ana- log.

Claims

1. A transceiver front end of a radio that selectively transmits and receives on either of a first frequency and a second frequency, said front end comprising: an integrated circuit having a power amplifier configured to amplify signals for transmission on the first frequency and a low-noise amplifier configured to amplify signals received on the second frequency.
2. The transceiver front end of claim 1 wherein the transceiver in- eludes a local oscillator, and wherein the integrated circuit includes a down- converter connected to the low-noise amplifier and the local oscillator is configured to mix a signal on the second frequency with a frequency generated by the local oscillator.
3. The transceiver front end of claim 2 wherein the down-converter comprises a mixer.
4. The transceiver front end of claim 1 wherein the integrated circuit comprises a first integrated circuit, and wherein the transceiver front end further comprises a second integrated circuit having a power amplifier configured to amplify signals for transmission on the second frequency and a low-noise amplifier configured to amplify signals received on the first frequency.
5. The transceiver front end of claim 4 wherein the transceiver includes a local oscillator, and wherein the second integrated circuit includes a second down-converter connected to the low-noise amplifier and the local oscillator is configured to mix a signal on the first frequency with a frequency generated by the local oscillator.
6. The transceiver front end of claim 5 wherein the down-converter comprises a mixer.
7. The transceiver front end of claim 1 wherein the integrated circuit includes a substrate comprising GaAs.
8. The transceiver front end of claim 4 wherein the second integrated circuit includes a substrate comprising GaAs.
9. The transceiver front end of claim 1 wherein the first frequency and the second frequency are different frequencies.
10. A transceiver that selectively transmits and receives on either of a first frequency and a second frequency, said radio having a multi-stage first frequency transmitter, a multi-stage first frequency receiver, a multi-stage second frequency transmitter, and a multi-stage second frequency receiver, said radio comprising: a first substrate having one or more stages of said multi-stage first frequency transmitter and one or more stages of said multi-stage second frequency receiver; and a second substrate having one or more stages of said multi-stage second frequency transmitter and one or more stages of said multi-stage first frequency receiver.
11. The transceiver of claim 10 wherein a first of the stages of the multi- stage first frequency transmitter comprises a power amplifier, wherein said one or more stages of said multi-stage first frequency transmitter on the first substrate comprise a power amplifier.
12. The transceiver of claim 10 wherein a first of the stages of the multistage second frequency transmitter comprises a power amplifier, wherein said one or more stages of said multi-stage second frequency transmitter on the second substrate comprise a power amplifier.
13. The transceiver of claim 10 wherein a first of the stages of the multistage second frequency band receiver comprises a low-noise amplifier and wherein said one or more stages of said multi-stage second frequency receiver on the first substrate comprises the low-noise amplifier.
14. The transceiver of claim 10 wherein a first of the stages of said first frequency band receiver comprises a low-noise amplifier and wherein said one or more stages of said multi-stage first frequency band receiver on the second substrate comprises the low-noise amplifier.
15. The transceiver of claim 10 wherein a first of the stages of said second frequency band receiver comprises a mixer, and wherein said one or more stages of said multi-stage second frequency band receiver on the first substrate includes the mixer.
16. The transceiver of claim 10 wherein a first of the stages of the first frequency band receiver comprises a mixer, and wherein said one or more stages of said multi-stage first frequency band receiver on the second substrate includes the mixer.
17. The transceiver of claim 10 wherein a first of the stages of said multi-stage second frequency band receiver comprises a low-noise amplifier and a second stage of said multi-stage receiver comprises a mixer, and wherein said one or more stages of said multi-stage second frequency band receiver on the first substrate comprise the low-noise amplifier and the mixer.
18. The transceiver of claim 10 wherein a first of the stages of said multi-stage first frequency band receiver comprises a low-noise amplifier and a second stage of the multi-stage first frequency band receiver comprises a mixer, wherein the one or more stages of the multi-stage first frequency band receiver on the second substrate comprise the low-noise amplifier and the mixer.
19. A dual-band radio having a user interface, a decoder and a transceiver that selectively transmits and receives on either of a first frequency and a second frequency, said transceiver characterized by: an integrated circuit having a power amplifier configured to amplify signals for transmission on the first frequency and a low-noise amplifier configured to amplify signals received on the second frequency.
20. The dual-band radio of claim 19 wherein the radio includes a local oscillator, and wherein the integrated circuit includes a down-converter connected to the low-noise amplifier and the local oscillator is configured to mix a signal on the second frequency with a frequency generated by the local oscillator.
21. The dual-band radio of claim 20 wherein the down-converter comprises a mixer connected to the low-noise amplifier and the local oscillator.
22. The dual-band radio of claim 19 wherein the integrated circuit comprises a first integrated circuit, and wherein the transceiver component further comprising a second integrated circuit having a power amplifier configured to amplify signals for transmission on the second frequency and a low-noise amplifier configured to amplify signals received on the first frequency.
23. The dual-band radio of claim 22 wherein the radio includes a local oscillator, and wherein the second integrated circuit includes a second down- converter connected to the low-noise amplifier and the local oscillator is configured to convert a signal on the first frequency to an intermediate frequency.
24. The dual-band radio of claim 23 wherein the down-converter comprises a mixer connected to the low-noise amplifier and the local oscillator.
25. The dual-band radio of claim 19 wherein the integrated circuit includes a substrate comprising GaAs.
26. The dual-band radio of claim 22 wherein the second integrated circuit includes a substrate comprising GaAs.
27. The dual-band radio of claim 19 wherein the first frequency and the second frequency are different frequencies.
28. A process for fabricating a dual-band transceiver front end, said transceiver comprising a multi-stage first frequency transmitter, a multi-stage first frequency receiver, a multi-stage second frequency transmitter, and a multi-stage second frequency receiver, said process comprising: providing a first substrate; fabricating one or more stages of said multi-stage first frequency transmitter on said first substrate; fabricating one or more stages of said multi-stage second frequency receiver on said first substrate; providing a second substrate; fabricating one or more stages of the multi-stage second frequency transmitter on the second substrate; and fabricating one or more stages of the multi-stage first frequency receiver on the substrate.
29. The process of claim 28 wherein fabricating one or more stages of the multi-stage first frequency transmitter comprises fabricating a power amplifier on the first substrate.
30. The process of claim 28 wherein fabricating one or more stages of the multi-stage second frequency receiver comprises fabricating a low-noise amplifier on the first substrate.
31. The process of claim 28 wherein fabricating one or more stages of the multi-stage second frequency receiver includes fabricating a down-converter on the first substrate.
32. The process of claim 28 wherein fabricating one or more stages ofthe multi-stage second frequency transmitter comprises fabricating a power amplifier on the second substrate.
33. The process of claim 28 wherein fabricating one or more stages of the multi-stage first frequency receiver comprises fabricating a low-noise amplifier on the second substrate.
34. The process of claim 28 wherein fabricating one or more stages of the multi-stage first frequency receiver includes fabricating a down-converter on the second substrate.
PCT/US1999/027227 1998-12-31 1999-11-17 Integrated transmitter and receiver components for a dual-band transceiver WO2000041325A1 (en)

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JP2000592960A JP2002534898A (en) 1998-12-31 1999-11-17 Integrated transmitter and receiver components for dual band transceivers
EP99959017A EP1142142B1 (en) 1998-12-31 1999-11-17 Integrated transmitter and receiver components for a dual-band transceiver
AT99959017T ATE286325T1 (en) 1998-12-31 1999-11-17 INTEGRATED COMPONENT FOR THE TRANSMITTER AND RECEIVER OF A DUAL-BAND TRANSCEIVER
DE69923000T DE69923000D1 (en) 1998-12-31 1999-11-17 INTEGRATED COMPONENT FOR THE TRANSMITTER AND RECEIVER OF A TWO-BAND TRANSMITTER
AU16274/00A AU1627400A (en) 1998-12-31 1999-11-17 Integrated transmitter and receiver components for a dual-band transceiver
IL14376499A IL143764A0 (en) 1998-12-31 1999-11-17 Integrated transmitter and receiver components for a dual-band transceiver
BR9916707-7A BR9916707A (en) 1998-12-31 1999-11-17 Transceiver front end of a selectively transmitting and receiving radio, selectively transmitting and receiving transceiver, dual band radio that has a user interface, and process to manufacture a dual end transceiver front end
HK02103972.4A HK1042387B (en) 1998-12-31 2002-05-28 Integrated transmitter and receiver components for a dual-band transceiver

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US09/224,344 US6522895B1 (en) 1998-12-31 1998-12-31 Integrated transmitter and receiver components for a dual-band transceiver

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004066516A1 (en) * 2003-01-21 2004-08-05 Qualcomm Incorporated Dual band receiver for simultaneously receiving signals in overlapping bands
EP3176950A1 (en) * 2015-12-01 2017-06-07 Analog Devices Global Local oscillator paths
US9755678B2 (en) 2015-12-01 2017-09-05 Analog Devices Global Low noise transconductance amplifiers

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6169789B1 (en) * 1996-12-16 2001-01-02 Sanjay K. Rao Intelligent keyboard system
US8050345B1 (en) 1999-08-09 2011-11-01 Kamilo Feher QAM and GMSK systems
US7079584B2 (en) * 1998-08-10 2006-07-18 Kamilo Feher OFDM, CDMA, spread spectrum, TDMA, cross-correlated and filtered modulation
US7415066B2 (en) * 1998-08-10 2008-08-19 Kamilo Feher Mis-matched modulation-demodulation format selectable filters
US7548787B2 (en) * 2005-08-03 2009-06-16 Kamilo Feher Medical diagnostic and communication system
US6470055B1 (en) * 1998-08-10 2002-10-22 Kamilo Feher Spectrally efficient FQPSK, FGMSK, and FQAM for enhanced performance CDMA, TDMA, GSM, OFDN, and other systems
US7593481B2 (en) * 1998-08-31 2009-09-22 Kamilo Feher CDMA, W-CDMA, 3rd generation interoperable modem format selectable (MFS) systems with GMSK modulated systems
FR2783654B1 (en) * 1998-09-23 2006-07-28 Sagem BIBANDE TRANSMITTER-RECEIVER WITH DOUBLE RADIATION DEVICE
JP2000299438A (en) * 1999-04-15 2000-10-24 Hitachi Ltd Semiconductor integrated circuit
US7260369B2 (en) 2005-08-03 2007-08-21 Kamilo Feher Location finder, tracker, communication and remote control system
US9813270B2 (en) 1999-08-09 2017-11-07 Kamilo Feher Heart rate sensor and medical diagnostics wireless devices
US9373251B2 (en) 1999-08-09 2016-06-21 Kamilo Feher Base station devices and automobile wireless communication systems
US9307407B1 (en) 1999-08-09 2016-04-05 Kamilo Feher DNA and fingerprint authentication of mobile devices
US6810266B1 (en) * 1999-11-16 2004-10-26 Freescale Semiconductor, Inc. Digitally controlled radio back-end
CN101309298B (en) * 2001-05-24 2012-07-04 索尼公司 Service providing method and integrated circuit
TWI225332B (en) * 2003-05-20 2004-12-11 Mediatek Inc Multi-band low noise amplifier
US7049906B2 (en) * 2003-05-29 2006-05-23 Sony Ericsson Mobile Communications Ab Quad band antenna interface modules including matching network ports
JP4010504B2 (en) * 2003-06-04 2007-11-21 日立金属株式会社 Multiband transceiver and wireless communication device using the same
DE10336292A1 (en) * 2003-08-01 2005-02-17 Atmel Germany Gmbh Transmitting and receiving device with at least two pairs of one each transmitting power amplifier and a low-noise input amplifier
US9026070B2 (en) * 2003-12-18 2015-05-05 Qualcomm Incorporated Low-power wireless diversity receiver with multiple receive paths
US7113804B2 (en) * 2004-01-09 2006-09-26 Motorola, Inc. Communication device and method of operation therefore
US8000675B2 (en) * 2004-04-16 2011-08-16 Sony Ericsson Mobile Communications Ab Low cost method for receiving broadcast channels with a cellular terminal
US7359449B2 (en) * 2004-10-05 2008-04-15 Kamilo Feher Data communication for wired and wireless communication
US7421004B2 (en) * 2004-10-05 2008-09-02 Kamilo Feher Broadband, ultra wideband and ultra narrowband reconfigurable interoperable systems
US7313414B2 (en) * 2004-12-13 2007-12-25 Broadcom Corporation Method and system for mobile receiver antenna architecture for European cellular and broadcasting services
US7280810B2 (en) * 2005-08-03 2007-10-09 Kamilo Feher Multimode communication system
US10009956B1 (en) 2017-09-02 2018-06-26 Kamilo Feher OFDM, 3G and 4G cellular multimode systems and wireless mobile networks
US9450665B2 (en) * 2005-10-19 2016-09-20 Qualcomm Incorporated Diversity receiver for wireless communication
US9178669B2 (en) * 2011-05-17 2015-11-03 Qualcomm Incorporated Non-adjacent carrier aggregation architecture
US9252827B2 (en) 2011-06-27 2016-02-02 Qualcomm Incorporated Signal splitting carrier aggregation receiver architecture
US9154179B2 (en) 2011-06-29 2015-10-06 Qualcomm Incorporated Receiver with bypass mode for improved sensitivity
US8774334B2 (en) 2011-11-09 2014-07-08 Qualcomm Incorporated Dynamic receiver switching
US9172402B2 (en) 2012-03-02 2015-10-27 Qualcomm Incorporated Multiple-input and multiple-output carrier aggregation receiver reuse architecture
US9362958B2 (en) 2012-03-02 2016-06-07 Qualcomm Incorporated Single chip signal splitting carrier aggregation receiver architecture
US9118439B2 (en) 2012-04-06 2015-08-25 Qualcomm Incorporated Receiver for imbalanced carriers
US9154356B2 (en) 2012-05-25 2015-10-06 Qualcomm Incorporated Low noise amplifiers for carrier aggregation
US9867194B2 (en) 2012-06-12 2018-01-09 Qualcomm Incorporated Dynamic UE scheduling with shared antenna and carrier aggregation
US9300420B2 (en) 2012-09-11 2016-03-29 Qualcomm Incorporated Carrier aggregation receiver architecture
US9543903B2 (en) 2012-10-22 2017-01-10 Qualcomm Incorporated Amplifiers with noise splitting
US8995591B2 (en) 2013-03-14 2015-03-31 Qualcomm, Incorporated Reusing a single-chip carrier aggregation receiver to support non-cellular diversity
US10177722B2 (en) 2016-01-12 2019-01-08 Qualcomm Incorporated Carrier aggregation low-noise amplifier with tunable integrated power splitter
WO2022259987A1 (en) * 2021-06-11 2022-12-15 株式会社村田製作所 High-frequency module and communication device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2310342A (en) * 1996-02-16 1997-08-20 Northern Telecom Ltd Dual mode radio transceiver front end
EP0823790A2 (en) * 1996-08-07 1998-02-11 Nokia Mobile Phones Ltd. Dual band mobile station employing cross-connected transmitter and receiver circuits

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2682836A1 (en) * 1991-10-18 1993-04-23 Philips Electronique Lab MONOLITHIC INTEGRATED CIRCUIT INCLUDING MULTIPLE FUNCTIONAL BLOCKS COUPLED BETWEEN THEM, IN HIGH AND / OR MICROFREQUENCIES, AND A CONTINUOUS VOLTAGE DISTRIBUTION LINE.
US5903178A (en) * 1994-12-16 1999-05-11 Matsushita Electronics Corporation Semiconductor integrated circuit
US6025850A (en) * 1997-03-28 2000-02-15 Adobe Systems Incorporated Object boundaries identified in a raster image by a user selecting positions on the raster image and then using cost functions to predict likelihood of pixels near the position being on a boundary path
US5751820A (en) * 1997-04-02 1998-05-12 Resound Corporation Integrated circuit design for a personal use wireless communication system utilizing reflection
US6125266A (en) * 1997-12-31 2000-09-26 Nokia Mobile Phones Limited Dual band architectures for mobile stations having transmitter linearization feedback
US6075995A (en) * 1998-01-30 2000-06-13 Conexant Systems, Inc. Amplifier module with two power amplifiers for dual band cellular phones
US6115595A (en) * 1998-05-04 2000-09-05 Trimble Navigation Limited Integrated circuit using a power supply input for digital logic
US6066989A (en) * 1998-12-21 2000-05-23 Cts Corporation Frequency synthesizer module for dual band radio

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2310342A (en) * 1996-02-16 1997-08-20 Northern Telecom Ltd Dual mode radio transceiver front end
EP0823790A2 (en) * 1996-08-07 1998-02-11 Nokia Mobile Phones Ltd. Dual band mobile station employing cross-connected transmitter and receiver circuits

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004066516A1 (en) * 2003-01-21 2004-08-05 Qualcomm Incorporated Dual band receiver for simultaneously receiving signals in overlapping bands
US7260416B2 (en) 2003-01-21 2007-08-21 Qualcomm Incorporated Shared receive path for simultaneous received signals
EP3176950A1 (en) * 2015-12-01 2017-06-07 Analog Devices Global Local oscillator paths
US9712113B2 (en) 2015-12-01 2017-07-18 Analog Devices Global Local oscillator paths
US9755678B2 (en) 2015-12-01 2017-09-05 Analog Devices Global Low noise transconductance amplifiers

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CN1146127C (en) 2004-04-14
BR9916707A (en) 2001-09-25
HK1042387A1 (en) 2002-08-09
AU1627400A (en) 2000-07-24
EP1142142B1 (en) 2004-12-29
JP2002534898A (en) 2002-10-15
US6522895B1 (en) 2003-02-18
ATE286325T1 (en) 2005-01-15
HK1042387B (en) 2004-12-24
CN1332909A (en) 2002-01-23
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TR200101974T2 (en) 2001-11-21
EP1142142A1 (en) 2001-10-10

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