WO2000041518A3 - Electrodeposition chemistry for filling of apertures with reflective metal - Google Patents

Electrodeposition chemistry for filling of apertures with reflective metal Download PDF

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Publication number
WO2000041518A3
WO2000041518A3 PCT/US2000/000155 US0000155W WO0041518A3 WO 2000041518 A3 WO2000041518 A3 WO 2000041518A3 US 0000155 W US0000155 W US 0000155W WO 0041518 A3 WO0041518 A3 WO 0041518A3
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WO
WIPO (PCT)
Prior art keywords
ppm
plating solution
concentration
filling
plating
Prior art date
Application number
PCT/US2000/000155
Other languages
French (fr)
Other versions
WO2000041518A2 (en
Inventor
Uziel Landau
Urso John J D
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/227,957 external-priority patent/US6379522B1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2000593140A priority Critical patent/JP2002534610A/en
Publication of WO2000041518A2 publication Critical patent/WO2000041518A2/en
Publication of WO2000041518A3 publication Critical patent/WO2000041518A3/en

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Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors

Abstract

The present invention provides plating solutions, particularly copper plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Defect free filling of features is enhanced by a plating solution containing blends of polythers ('carrier') and organic divalent sulfur compounds ('accelerator'), wherein the concentration of the carrier ranges from about 0.1 ppm to about 2500 ppm of the plating solution, and the concentration of the accelerator ranges form about 0.05 ppm to about 1000 ppm of the plating solution. The plating solution is further improved by adding an organic nitrogen compound at a concentration from about 0.01 ppm to about 1000 ppm to improve the filling of vias on a resistive substrate. The organic nitrogen is preferably a substituted thiadiazole, which is used at concentrations from 0.1 ppm to about 50 ppm of the plating solution, or a quartenary nitrogen compound, which is used at concentrations from about 0.01 ppm to about 500 ppm.
PCT/US2000/000155 1999-01-11 2000-01-05 Electrodeposition chemistry for filling of apertures with reflective metal WO2000041518A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000593140A JP2002534610A (en) 1999-01-11 2000-01-05 Electrodeposition chemistry for filling openings with reflective metals

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/227,957 1999-01-11
US09/227,957 US6379522B1 (en) 1999-01-11 1999-01-11 Electrodeposition chemistry for filling of apertures with reflective metal
US09/263,653 1999-03-05
US09/263,653 US6544399B1 (en) 1999-01-11 1999-03-05 Electrodeposition chemistry for filling apertures with reflective metal

Publications (2)

Publication Number Publication Date
WO2000041518A2 WO2000041518A2 (en) 2000-07-20
WO2000041518A3 true WO2000041518A3 (en) 2000-11-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/000155 WO2000041518A2 (en) 1999-01-11 2000-01-05 Electrodeposition chemistry for filling of apertures with reflective metal

Country Status (4)

Country Link
US (2) US6544399B1 (en)
JP (1) JP2002534610A (en)
TW (1) TW524894B (en)
WO (1) WO2000041518A2 (en)

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Also Published As

Publication number Publication date
US6544399B1 (en) 2003-04-08
US20020011416A1 (en) 2002-01-31
JP2002534610A (en) 2002-10-15
TW524894B (en) 2003-03-21
WO2000041518A2 (en) 2000-07-20
US6596151B2 (en) 2003-07-22

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