WO2000052528A2 - Monograin membrane mask - Google Patents

Monograin membrane mask Download PDF

Info

Publication number
WO2000052528A2
WO2000052528A2 PCT/DE2000/000708 DE0000708W WO0052528A2 WO 2000052528 A2 WO2000052528 A2 WO 2000052528A2 DE 0000708 W DE0000708 W DE 0000708W WO 0052528 A2 WO0052528 A2 WO 0052528A2
Authority
WO
WIPO (PCT)
Prior art keywords
light
membrane
mask
state
monograin
Prior art date
Application number
PCT/DE2000/000708
Other languages
German (de)
French (fr)
Other versions
WO2000052528A3 (en
Inventor
Dieter Meissner
Original Assignee
Forschungszentrum Jülich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Jülich GmbH filed Critical Forschungszentrum Jülich GmbH
Priority to EP00922424A priority Critical patent/EP1157308A2/en
Publication of WO2000052528A2 publication Critical patent/WO2000052528A2/en
Publication of WO2000052528A3 publication Critical patent/WO2000052528A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/12—Production of screen printing forms or similar printing forms, e.g. stencils

Definitions

  • the invention relates to a method for producing a mask, such a mask and advantageous uses.
  • Masks of the type mentioned are used for example in screen printing.
  • a sieve is coated on one side with a thick liquid photoresist.
  • a closed (impermeable) layer of lacquer on one side of the sieve.
  • the lacquer layer is then exposed according to a predetermined structure (pattern).
  • the exposure takes place, for example, through a mask which already has openings according to the predetermined structure or the predetermined pattern.
  • either the exposed or the unexposed areas of the photoresist are polymerized. Either the polymerized part of the photoresist or the unpolymerized part of the photoresist is etched away.
  • a sieve remains, which is partially coated with photoresist and is otherwise permeable.
  • Printer ink is now applied to paper through the permeable areas. An image of the given structure then appears on the paper (negative or positive image).
  • the aforementioned method for printing on paper is referred to as the screen printing method.
  • a comparable process is used for the production of conductor tracks on chips (electronic components for Computer etc.) applied. It is known as lithography.
  • a photoresist is applied to a substrate. Structures are removed from the photoresist layer in a defined manner by exposure and a corresponding chemical treatment.
  • the substrate is then subjected to an etching treatment (e.g. ion or electron beam etching) through the structures of the photoresist.
  • An image of the predefined structure is formed on the substrate and so, for example, conductor tracks if the uppermost layer on the substrate, which was etched away in places according to the predefined structure, was electrically conductive.
  • the photomask is then removed.
  • a disadvantage of a photoresist is that it has a limited lifespan and is sensitive to light. The handling of the photoresist is correspondingly complex.
  • Monograin membranes are known, e.g. B. the patent application with the official file number 198 28 310.5-43 can be seen.
  • a monograin membrane is a thin layer made up of a layer of powder. The powder grains are glued together. The powder grains can be single crystal.
  • a melt is produced and a flux is added to produce single-crystal powder.
  • the melt has the components of a semiconducting material, for example the components of copper indium diselenide, usually in a stochiometric composition.
  • the melt is usually heated to defined temperatures between 300 ° C and 1000 ° C.
  • Single-crystal powder grains grow at a suitable temperature.
  • the desired recrystallization takes place at temperatures above the melting points of the ones to be melted Materials instead. If the powder grains have the desired size, the growth is stopped by quenching. The appropriate time of quenching and the appropriate temperature profile to achieve desired powder sizes are such.
  • Monograin membranes are produced in a known manner from the powders produced according to the process and are used in particular in solar cells.
  • the layer containing the powder layer is removed from the substrate.
  • the powder grains can be exposed from the surface if necessary by etching. Otherwise, the powder grains are or remain connected to one another by the resin, etc., and thus form the desired monograin membrane.
  • the object of the invention is to provide a process for the production of a mask which can be handled more easily and in which the problems relating to the preservation of the photoresist do not arise.
  • the object of the invention is to create a product manufactured in accordance with the method and to specify advantageous uses.
  • a monograin membrane which is composed of photosensitive semiconductor particles.
  • photosensitive semiconductors such are used, which in a first state, for. B. are stable in the dry state and in a second state, for. B. in a humidified state, photosensitive, ie unstable, behave.
  • Light-sensitive behavior is understood to mean that the exposed powder grains of the membrane can fall out of the membrane or dissolve completely in the corresponding state, for example in the moistened state.
  • the membrane provided is converted from the light-insensitive state to the light-sensitive state.
  • the membrane is then exposed in accordance with the desired structure. According to the exposure, the grains fall out of the monograin membrane or dissolve.
  • the membrane is converted from the light-sensitive state to the light-insensitive state, that is to say dried in the example mentioned above.
  • the desired mask is then available.
  • materials that meet the aforementioned conditions are: PbS, CdS, ZnS, CdTe, Si, Ge, GaAs, polypyrrole, polyaniline in films such as polyurethane, polycarbonate, polyethylene, polymethyl methacrylate.
  • Examples of light-sensitive conditions are: PbS, CdS ZnS in aqueous sulfide solution, Si in aqueous HF solution, GaAs and CdTe in water, polymers in alcoholic or organic solvents, especially in the presence of oxygen.
  • Examples of light-insensitive conditions are: all of the aforementioned materials in dry air, Si and polypyrrole and other polymers in water, e.g. SiO 2 passivates the material and pyrrole; Mono-, oligo- and polymers into which polymers are converted after the particles have been irradiated and which do not dissolve in water.
  • Examples for the transfer of materials from the light-insensitive to the light-sensitive state generally immersion in a solution in which the
  • Photocorrosion products are soluble;
  • the method has the advantage over the method of the type mentioned at the beginning with the photoresist that the monograin membrane is initially in a light-insensitive state. This results in a significantly improved lifespan compared to photoresists. According to the process, the monograin membrane is only in the light-sensitive state for a short time. After the procedure is complete, a mask lies in one light-insensitive state, which can therefore be handled without problems.
  • the product produced by the process is therefore a monograin membrane which has predetermined, defined structures and functions as a mask of the type mentioned at the outset.
  • the mask according to claim is z. B. used in screen printing, in lithography, for the production of chips or for the production of electrodes.
  • Mono-grain membranes are produced, for example, by sprinkling semiconductor powders onto a glass plate coated with UHLJ - photo adhesive, then immersing them in a solution made of the two-component plastic Desmodur c / Desmophen ® in xylene and then stripping, curing and etching the polymer with a KOH solution .
  • CdS, CdTe, CdSe, CuInSe2 ⁇ particles with diameters between 20 ⁇ m and 50 ⁇ m have been used, which corrode themselves under exposure, as well as Ti ⁇ 2 .
  • ZnO, CdS, the z. B. in alcoholic solution dissolve the polymer films, here polyurethane, and then fall out.
  • Dimensions of the masks that are generally used are e.g. B. Dimensions that are required for the screen printing process for images: between 1 ⁇ m and a few hundred ⁇ m depending on the desired fineness of the structures, when printing pastes for the production of ceramics even in the millimeter range or larger.
  • the mask sizes themselves range from square micrometers to hundreds of square centimeters for exposure or mask etching. Square meters can also be provided for paste printing for ceramic production.
  • a mask in the sense of the invention has in particular a plurality of holes and / or slits. Slits run in particular in accordance with typical artificially created geometries, such as straight, corresponding to the multiplication of a quarter of a circumference or rectangular.
  • the holes or slots in the mask are usually not distributed randomly, but artificially arranged, according to the purpose.

Abstract

The invention relates to a mask, a method for the production of said mask, the mask itself and advantageous applications of the inventive mask. The method for the production of the mask comprises the following steps: using a monograin membrane consisting of light-sensitive particles; wherein said light-sensitive particles behave in such a way that they are resistant to light in a first state and not resistant to light in a second state; passing the monograin membrane from the light resistant to the non-light resistant state; exposing the membrane in accordance with a given structure; in accordance with said exposure, the particles fall off from the monograin membrane or dissolve; subsequently passing the membrane from the light-sensitive to the light insensitive state. The mask consequently consists of a monograin membrane with defined structures. Said mask can be used, for instance, in a silk screen or lithographic printing process or in the production of electrodes. One advantage of said process is that it is not necessary to always use photosensitive resist.

Description

B e s c h r e i b u n g Description
MonokornmembranmaskeMonograin membrane mask
Die Erfindung betrifft ein Verfahren zur Herstellung einer Maske, eine derartige Maske sowie vorteilhafte Verwendungsweisen .The invention relates to a method for producing a mask, such a mask and advantageous uses.
Masken der eingangs genannten Art werden beispielsweise beim Siebdruck verwendet. Ein Sieb wird einseitig mit einem dickfl ssigen Photolack beschichtet. Auf einer Seite des Siebes findet sich dann eine geschlossene (undurchlässige) Lackschicht. Die Lackschicht wird anschließend gemäß einer vorgegebenen Struktur (Muster) belichtet. Die Belichtung erfolgt beispielsweise durch eine Maske hindurch, die bereits Offnungen gemäß der vorgegebenen Struktur bzw. dem vorgegebenen Muster aufweist. Anschließend werden entweder die belichteten oder die unbelichteten Stellen beim Photolack polymerisiert . Entweder wird der polymerisierte Teil des Photolacks oder der nicht polymerisierte Teil des Photolacks weggeatzt. Es verbleibt ein Sieb, das partiell mit Photolack beschichtet und im übrigen durchlassig ist. Druckerfarbe wird nun durch die durchlassigen Stellen hindurch auf Papier aufgebracht. Auf dem Papier erscheint dann ein Abbild der vorgegebenen Struktur (negative oder positive Abbildung) . Das vorgenannte Verfahren zum Bedrucken von Papier wird als Siebdruckverfahren bezeichnet. Ein vergleichbares Verfahren wird bei der Herstellung von Leiterbahnen auf Chips (elektronische Bauteile für Computer etc.) angewendet. Es ist unter der Bezeichnung Lithographie bekannt. Auf ein Substrat wird ein Photolack aufgebracht. Durch Belichten und eine entsprechende chemische Behandlung werden Strukturen aus der Photolackschicht definiert entfernt. Durch die Strukturen des Photolacks hindurch wird das Substrat anschließend einer Atzbehandlung unterzogen (z. B. Ionen- oder Elektronenstrahl-Atzen) . Auf dem Substrat entstehen ein Abbild der vorgegebenen Struktur und so zum Beispiel Leiterbahnen, wenn die oberste, gemäß der vorgegebenen Struktur stellenweise weggeatzte Schicht auf dem Substrat elektrisch leitfahig war. Anschließend wird die Photomaske beseitigt.Masks of the type mentioned are used for example in screen printing. A sieve is coated on one side with a thick liquid photoresist. Then there is a closed (impermeable) layer of lacquer on one side of the sieve. The lacquer layer is then exposed according to a predetermined structure (pattern). The exposure takes place, for example, through a mask which already has openings according to the predetermined structure or the predetermined pattern. Then either the exposed or the unexposed areas of the photoresist are polymerized. Either the polymerized part of the photoresist or the unpolymerized part of the photoresist is etched away. A sieve remains, which is partially coated with photoresist and is otherwise permeable. Printer ink is now applied to paper through the permeable areas. An image of the given structure then appears on the paper (negative or positive image). The aforementioned method for printing on paper is referred to as the screen printing method. A comparable process is used for the production of conductor tracks on chips (electronic components for Computer etc.) applied. It is known as lithography. A photoresist is applied to a substrate. Structures are removed from the photoresist layer in a defined manner by exposure and a corresponding chemical treatment. The substrate is then subjected to an etching treatment (e.g. ion or electron beam etching) through the structures of the photoresist. An image of the predefined structure is formed on the substrate and so, for example, conductor tracks if the uppermost layer on the substrate, which was etched away in places according to the predefined structure, was electrically conductive. The photomask is then removed.
Nachteilhaft verfugt ein Photolack nur über eine be- grenzte Lebensdauer und verhalt sich empfindlich gegenüber Licht. Die Handhabung des Photolacks ist entsprechend aufwendig.A disadvantage of a photoresist is that it has a limited lifespan and is sensitive to light. The handling of the photoresist is correspondingly complex.
Bekannt sind Monokornmembranen, wie z. B. der Patentanmeldung mit dem amtlichen Aktenzeichen 198 28 310.5-43 zu entnehmen ist. Eine Monokornmembran ist eine dünne Schicht, die aus einer Lage eines Pulvers aufgebaut ist. Die Pulverkorner sind miteinander verklebt. Die Pulverkorner können einkristallm sein.Monograin membranes are known, e.g. B. the patent application with the official file number 198 28 310.5-43 can be seen. A monograin membrane is a thin layer made up of a layer of powder. The powder grains are glued together. The powder grains can be single crystal.
Zur Herstellung von einkristallmem Pulver wird eine Schmelze erzeugt und ein Flußmittel zugegeben. Die Schmelze weist die Komponenten eines halbleitenden Materials, also zum Beispiel die Komponenten von Kupfer-Indium-Diselenid auf und zwar m der Regel in stochiometrischer Zusammensetzung. Die Schmelze wird m der Regel auf definierte Temperaturen zwischen 300 °C und 1000 °C erhitzt. Es wachsen bei geeigneter Temperatur einkristalline Pulverkorner heran. Die gew nschte Rekristallisation findet bei Temperaturen oberhalb der Schmelzpunkte der aufzuschmelzenden Materialien statt. Weisen die Pulverkorner die gewünschte Große auf, so wird das Wachstum durch Quenchen abgebrochen. Der geeignete Zeitpunkt des Quenchens sowie der geeignete Temperaturverlauf zur Erzielung gewünschter Pulvergroßen werden z. B. durchA melt is produced and a flux is added to produce single-crystal powder. The melt has the components of a semiconducting material, for example the components of copper indium diselenide, usually in a stochiometric composition. The melt is usually heated to defined temperatures between 300 ° C and 1000 ° C. Single-crystal powder grains grow at a suitable temperature. The desired recrystallization takes place at temperatures above the melting points of the ones to be melted Materials instead. If the powder grains have the desired size, the growth is stopped by quenching. The appropriate time of quenching and the appropriate temperature profile to achieve desired powder sizes are such. B. by
Vorversuche ermittelt. Anschließend wird das Flußmittel entfernt .Preliminary tests determined. The flux is then removed.
Monokorn embranen werden in bekannter Weise aus den verfahrensgemaß hergestellten Pulvern hergestellt und insbesondere in Solarzellen verwendet.Monograin membranes are produced in a known manner from the powders produced according to the process and are used in particular in solar cells.
Aus der Druckschrift „T. S. Velde, G. W. M. T. van Helden, Monograin layers, Philips Technical Review, 2_9 (1968), 238 - 242" ist bekannt, aus einkristallinem CdS-Pulver eine Monokornmembran herzustellen. Einkristallines, aus CdS bestehendes Pulver wird durch Zerkleinern eines größeren Einkristalls hergestellt. Es wird dann ein Klebstoff als dünne Schicht auf einem aus Glas bestehenden Substrat aufgebracht. Auf die aus dem Klebstoff bestehende Schicht wird das Pulver aufgestreut. Eine Lage des Pulvers haftet daraufhin am Klebstoff. Die übrigen, nicht mit dem Klebstoff verbundenen Pulverkorner werden entfernt. Gelostes Harz, Polymer oder Komponenten hierfür werden zu den am Klebstoff haftenden Pulverkornern hinzugegeben. Nach Trocknen und Ausharten der Losung wird die eineFrom the publication "T. S. Velde, GWMT van Helden, Monograin layers, Philips Technical Review, 2_9 (1968), 238-242 "is known to produce a mono-grain membrane from single-crystal CdS powder. Single-crystal powder consisting of CdS is produced by crushing a larger single crystal. An adhesive is then applied as a thin layer on a substrate made of glass. The powder is sprinkled onto the layer consisting of the adhesive. One layer of the powder then adheres to the adhesive. The remaining powder grains not connected to the adhesive are removed Resin, polymer or components for this are added to the powder particles adhering to the adhesive, and once the solution has dried and hardened, one becomes
Pulverlage enthaltende Schicht vom Substrat abgezogen. Durch Atzen können die Pulverkorner bei Bedarf von der Oberflache her freigelegt werden. Im übrigen sind bzw. bleiben die Pulverkorner durch das Harz etc. miteinander verbunden und bilden so die gewünschte Monokornmembran . Aufgabe der Erfindung ist die Schaffung eines Verfahrens zur Herstellung einer Maske, welches leichter gehandhabt werden kann und bei dem nicht die Probleme bezuglich der Konservierung des Photolackes auftreten. Aufgabe der Erfindung ist die Schaffung eines verfahrensgemäß hergestellten Produktes sowie die Angabe vorteilhafter Verwendungsweisen.The layer containing the powder layer is removed from the substrate. The powder grains can be exposed from the surface if necessary by etching. Otherwise, the powder grains are or remain connected to one another by the resin, etc., and thus form the desired monograin membrane. The object of the invention is to provide a process for the production of a mask which can be handled more easily and in which the problems relating to the preservation of the photoresist do not arise. The object of the invention is to create a product manufactured in accordance with the method and to specify advantageous uses.
Die Aufgaben der Erfindung werden durch ein Verfahren mit den Merkmalen des Hauptanspruchs, durch eine Vorrichtung sowie einer Verwendungsweise mit den Merkmalen der entsprechenden Nebenanspruche gelost. Vorteilhafte Ausgestaltungen ergeben sich aus den Unteranspruchen.The objects of the invention are achieved by a method with the features of the main claim, by a device and a method of use with the features of the corresponding subclaims. Advantageous refinements result from the subclaims.
Verfahrensgemäß wird eine Monokornmembran verwendet, die aus lichtempfindlichen Halbleiterteilchen aufgebaut ist. Als lichtempfindliche Halbleiter werden derartige eingesetzt, die in einem ersten Zustand, z. B. im trockenen Zustand stabil sind und sich in einem zweiten Zustand, z. B. in einem befeuchteten Zustand, lichtempfindlich, d. h. instabil, verhalten. Unter lichtempfindlichem Verhalten wird verstanden, daß die belichteten Pulverkorner der Membran im entsprechenden Zustand, also beispielsweise im befeuchteten Zustand, aus der Membran herausfallen können oder sich ganz auflosen. Verfahrensgemaß wird die bereitgestellte Membran vom lichtunempfindlichen Zustand in den lichtempfindlichen Zustand überfuhrt. Anschließend wird die Membran entsprechend der gewünschten Struktur belichtet. Entsprechend der Belichtung fallen die Korner aus der Monokornmembran heraus oder losen sich auf. Die Membran wird vom lichtempfindlichen Zustand in den lichtunempfindlichen Zustand überfuhrt, also beim vorgenannten Beispiel getrocknet. Anschließend steht die gewünschte Maske zur Verfugung. Beispiele für Materialien, die die vorgenannten Bedingungen erfüllen, sind: PbS, CdS, ZnS, CdTe, Si, Ge, GaAs, Polypyrrol, Polyanilin in Folien wie Polyurethan, Polycarbonat , Polyethylen, Polymethylmethacrylat .According to the method, a monograin membrane is used, which is composed of photosensitive semiconductor particles. As photosensitive semiconductors such are used, which in a first state, for. B. are stable in the dry state and in a second state, for. B. in a humidified state, photosensitive, ie unstable, behave. Light-sensitive behavior is understood to mean that the exposed powder grains of the membrane can fall out of the membrane or dissolve completely in the corresponding state, for example in the moistened state. According to the process, the membrane provided is converted from the light-insensitive state to the light-sensitive state. The membrane is then exposed in accordance with the desired structure. According to the exposure, the grains fall out of the monograin membrane or dissolve. The membrane is converted from the light-sensitive state to the light-insensitive state, that is to say dried in the example mentioned above. The desired mask is then available. Examples of materials that meet the aforementioned conditions are: PbS, CdS, ZnS, CdTe, Si, Ge, GaAs, polypyrrole, polyaniline in films such as polyurethane, polycarbonate, polyethylene, polymethyl methacrylate.
Beispiele für lichtempfindliche Zustände sind: PbS, CdS ZnS in wäßriger Sulfidlösung, Si in wäßriger HF-Lösung, GaAs und CdTe in Wasser, Polymere in alkoholischen oder organischen Lösungsmitteln, vor allem in Gegenwart von Sauerstoff.Examples of light-sensitive conditions are: PbS, CdS ZnS in aqueous sulfide solution, Si in aqueous HF solution, GaAs and CdTe in water, polymers in alcoholic or organic solvents, especially in the presence of oxygen.
Beispiele für lichtunempfindliche Zustände sind: sämtliche vorgenannte Materialien in trockener Luft, Si und Polypyrrol und andere Polymere in Wasser, da z.B. Siθ2 das Material passiviert und Pyrrol; Mono-, Oligo- und Polymere, in die Polymere nach dem Bestrahlen der Teilchen umgewandelt werden, und die sich nicht in Wasser lösen.Examples of light-insensitive conditions are: all of the aforementioned materials in dry air, Si and polypyrrole and other polymers in water, e.g. SiO 2 passivates the material and pyrrole; Mono-, oligo- and polymers into which polymers are converted after the particles have been irradiated and which do not dissolve in water.
Beispiele für die Überführung der Materialien vom lichtunempfindlichen in den lichtempfindlichen Zustand: generell Eintauchen in eine Lösung, in der dieExamples for the transfer of materials from the light-insensitive to the light-sensitive state: generally immersion in a solution in which the
Photokorrosionsprodukte löslich sind; vorteilhaft ist regelmäßig die Gegenwart von Sauerstoff, der zum Peroxid oder Superoxid reduziert werden kann.Photocorrosion products are soluble; The presence of oxygen, which can be reduced to peroxide or superoxide, is regularly advantageous.
Das Verfahren weist gegenüber dem Verfahren der ein- gangs genannten Art mit dem Photolack den Vorteil auf, daß die Monokornmembran sich zunächst in einem lichtunempfindlichen Zustand befindet. Hieraus resultiert regelmäßig eine erheblich verbesserte Lebensdauer gegenüber Photolacken. Verfahrensgemäß befindet sich die Monokornmembran nur für kurze Zeit im lichtempfindlichen Zustand. Nach Abschluß des Verfahrens liegt eine Maske in einem lichtunempfindlichen Zustand vor, die daher unproblematisch gehandhabt werden kann.The method has the advantage over the method of the type mentioned at the beginning with the photoresist that the monograin membrane is initially in a light-insensitive state. This results in a significantly improved lifespan compared to photoresists. According to the process, the monograin membrane is only in the light-sensitive state for a short time. After the procedure is complete, a mask lies in one light-insensitive state, which can therefore be handled without problems.
Das nach dem Verfahren hergestellte Produkt ist also eine Monokornmembran, die vorgegebene definierte Strukturen aufweist und als Maske der eingangs genannten Art fungiert .The product produced by the process is therefore a monograin membrane which has predetermined, defined structures and functions as a mask of the type mentioned at the outset.
Die anspruchsgemäße Maske wird z. B. beim Siebdruckverfahren verwendet, bei der Lithographie, zur Herstellung von Chips oder zur Herstellung von Elektroden.The mask according to claim is z. B. used in screen printing, in lithography, for the production of chips or for the production of electrodes.
Ausführungsbeispiele :Examples:
Mononokornmembranen werden z.B. hergestellt durch Aufstreuen von Halbleiterpulvern auf eine mit UHLJ - Photokleber bestrichene Glasplatte, anschließendes Eintauchen in eine Lösung aus dem 2-Komponenten- Kunststoff Desmodurc/Desmophen® in Xylol und nachfolgendes Abziehen, Härten und Abätzen des Polymers mit einer KOH-Lösung.Mono-grain membranes are produced, for example, by sprinkling semiconductor powders onto a glass plate coated with UHLJ - photo adhesive, then immersing them in a solution made of the two-component plastic Desmodur c / Desmophen ® in xylene and then stripping, curing and etching the polymer with a KOH solution .
Eingesetzt wurden bisher: CdS-, CdTe-, CdSe-, CuInSe2~ Teilchen mit Durchmessern zwischen 20 μm und 50 μm, die selber unter Belichtung korrodieren, sowie Tiθ2. ZnO, CdS, die z. B. in alkoholischer Lösung die Polymerfolien, hier Polyurethan, anlösen und dann herausfallen . Dimensionierungen der Masken, die im allgemeinen verwendet werden, sind z. B. Dimensionen, die beim Siebdruckverfahren für Bilder erforderlich sind: zwischen 1 μm und einigen hundert μm je nach gewünschter Feinheit der Strukturen, beim Drucken von Pasten zur Herstellung von Keramiken auch im Millimeterbereich oder größer. Die Maskengrößen selbst liegen im Bereich von Quadratmikrometern bis hunderten von Quadratzentimetern für das Belichten oder Maskenätzen. Für einen Pastendruck zur Keramikherstellung können auch Quadratmeter vorgesehen sein.So far, CdS, CdTe, CdSe, CuInSe2 ~ particles with diameters between 20 μm and 50 μm have been used, which corrode themselves under exposure, as well as Tiθ2 . ZnO, CdS, the z. B. in alcoholic solution, dissolve the polymer films, here polyurethane, and then fall out. Dimensions of the masks that are generally used are e.g. B. Dimensions that are required for the screen printing process for images: between 1 μm and a few hundred μm depending on the desired fineness of the structures, when printing pastes for the production of ceramics even in the millimeter range or larger. The mask sizes themselves range from square micrometers to hundreds of square centimeters for exposure or mask etching. Square meters can also be provided for paste printing for ceramic production.
Dimensionen, die bei der Lithographie eine Rolle spielen, sind: je nach Lithographieverfahren von nm (Röntgen- und Elektronenstrahl-), hundert nm (für UV),Dimensions that play a role in lithography are: depending on the lithography process of nm (X-ray and electron beam), hundred nm (for UV),
1 μm für sichtbares Licht usw.. Beispiele für Dimensionen und Aussehen einer Maske, wenn Elektroden hergestellt werden sollen, sind: Für die Herstellung von Punktkontaktelektroden können extreme Unterschiede erforderlich sein, z. B. nm-Höhen mit μm-Durchmessern in cm-Abständen. Eine Monokornmembran und keine Membran, die aus mehreren Pulverlagen besteht, wird eingesetzt, damit nach dem Belichten und dem korrionsbedingten Herausfallen oder Auflösen der Teilchen der Weg für das zu druckende Material oder die zum Belichten oder Ätzen verwendeten Strahlen frei sein muß.1 μm for visible light etc. Examples of dimensions and appearance of a mask when electrodes are to be produced are: Extreme differences may be required for the production of point contact electrodes, for example: B. nm heights with μm diameters in cm intervals. A monograin membrane and not a membrane consisting of several layers of powder is used so that after exposure and the corrosion-related dropping out or dissolving of the particles, the path for the material to be printed or the rays used for exposure or etching must be clear.
Einkristalline Teilchen bei der Membran zu verwenden, weist den Vorteil auf, daß dann der Photoeffekt mit einer höheren Quantenausbeute den gewünschten Auflösungseffekt erzielt. Eine Maske im Sinne der Erfindung weist insbesondere eine Mehrzahl an Löchern und/ oder Schlitzen auf. Schlitze verlaufen insbesondere gemäß typischen künstlich erzeugten Geometrien, wie geradlinig, entsprechend dem Ein- oder Mehrfachen von einem Viertel eines Kreisumfangs oder rechtwinkelig. Die Löcher oder Schlitze liegen in der Maske in der Regel entsprechend dem Zweck nicht zufällig verteilt, sondern künstlich angeordnet vor. Using single-crystalline particles in the membrane has the advantage that the photo effect with a higher quantum yield then achieves the desired dissolution effect. A mask in the sense of the invention has in particular a plurality of holes and / or slits. Slits run in particular in accordance with typical artificially created geometries, such as straight, corresponding to the multiplication of a quarter of a circumference or rectangular. The holes or slots in the mask are usually not distributed randomly, but artificially arranged, according to the purpose.

Claims

P a t e n t a n s p r ü c h e P a t e n t a n s r u c h e
Verfahren zur Herstellung einer Maske mit den Schritten:Process for the production of a mask with the following steps:
- eine Monokornmembran wird verwendet, die aus lichtempfindlichen Teilchen aufgebaut ist,a mono-grain membrane is used, which is composed of light-sensitive particles,
- wobei als Teilchen solche verwendet werden, die sich in einem ersten Zustand gegenüber Licht empfindlich und in einem zweiten Zustand sich gegenüber Licht unempfindlich verhalten;- The particles used are those which are sensitive to light in a first state and are insensitive to light in a second state;
- die Monokornmembran wird vom lichtunempfind- lichen in den lichtempfindlichen Zustand gebracht ;- The monograin membrane is brought from the light-insensitive to the light-sensitive state;
- anschließend wird die Monokornmembran entsprechend einer vorgegebenen Struktur belichtet;- The monograin membrane is then exposed according to a predetermined structure;
- entsprechend der Belichtung fallen die Körner aus der Monokornmembran heraus ;- the grains fall out of the monograin membrane according to the exposure;
- die Monokornmembran wird anschließend vom lichtempfindlichen Zustand in den lichtunempfindlichen Zustand gebracht.- The monograin membrane is then brought from the light-sensitive state to the light-insensitive state.
Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die Teilchen der Monokornmembran aus einkristallinen Halbleitermaterialien bestehen.A method according to claim 1, characterized in that the particles of the monograin membrane consist of single-crystalline semiconductor materials.
3. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß die Überführung von einem lichtunempfindlichen in einen lichtempfindlichen Zustand durch Befeuchten der Monokornmembran erfolgt . 3. The method according to any one of the preceding claims, characterized in that the transfer from a light-insensitive to a light-sensitive state is carried out by moistening the monograin membrane.
4. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet , daß die Überführung von einem lichtempfindlichen in einen lichtunempfindlichen Zustand durch Trocknen der Monokornmembran erfolgt .4. The method according to any one of the preceding claims, characterized in that the transfer from a light-sensitive to a light-insensitive state is carried out by drying the monograin membrane.
5. Maske, bestehend aus einer Monokornmembran mit definierten Strukturen in der Monokornmembran.5. Mask, consisting of a monograin membrane with defined structures in the monograin membrane.
Verwendung einer Maske bestehend aus einer Monokornmembran mit definierter Struktur in der Monokornmembran für ein Siebdruck-, für ein Lithographieverfahren oder für die Herstellung von Elektroden. Use of a mask consisting of a monograin membrane with a defined structure in the monograin membrane for a screen printing, for a lithography process or for the production of electrodes.
PCT/DE2000/000708 1999-03-03 2000-03-01 Monograin membrane mask WO2000052528A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP00922424A EP1157308A2 (en) 1999-03-03 2000-03-01 Monograin membrane mask

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19909187A DE19909187C1 (en) 1999-03-03 1999-03-03 Monograin membrane mask
DE19909187.0 1999-03-03

Publications (2)

Publication Number Publication Date
WO2000052528A2 true WO2000052528A2 (en) 2000-09-08
WO2000052528A3 WO2000052528A3 (en) 2001-01-11

Family

ID=7899490

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/000708 WO2000052528A2 (en) 1999-03-03 2000-03-01 Monograin membrane mask

Country Status (3)

Country Link
EP (1) EP1157308A2 (en)
DE (1) DE19909187C1 (en)
WO (1) WO2000052528A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2036153A1 (en) * 1970-07-21 1972-01-27 Siemens Ag Semiconductor exposure masks - with chalocogenide coating for accurate adjustment
US3787277A (en) * 1969-09-18 1974-01-22 Philips Corp Mono-grain layer membrane
JPS5329278A (en) * 1976-09-01 1978-03-18 Hitachi Ltd Treating method of organic waste matter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6510097A (en) * 1965-08-04 1967-02-06

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3787277A (en) * 1969-09-18 1974-01-22 Philips Corp Mono-grain layer membrane
DE2036153A1 (en) * 1970-07-21 1972-01-27 Siemens Ag Semiconductor exposure masks - with chalocogenide coating for accurate adjustment
JPS5329278A (en) * 1976-09-01 1978-03-18 Hitachi Ltd Treating method of organic waste matter

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ALTOSAAR ET AL: "monograin layers and membranes for photovoltaics" , CONFERENCE RECORD OF THE IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE,US,NEW YORK, IEEE, VOL. CONF. 25, PAGE(S) 877-880 XP002121609 ISBN: 0-7803-3167-2 *
LERCEL M J ET AL: "SELF-ASSEMBLED MONOLAYER ELECTRON-BEAM RESISTS ON GAAS AND SIO2" JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, Bd. 11, Nr. 6, 1. November 1993 (1993-11-01), Seiten 2823-2828, XP000423435 ISSN: 0734-211X *
PATENT ABSTRACTS OF JAPAN vol. 002, no. 072 (C-014), 31. Mai 1978 (1978-05-31) & JP 53 029278 A (HITACHI LTD), 18. März 1978 (1978-03-18) *

Also Published As

Publication number Publication date
DE19909187C1 (en) 2000-10-26
EP1157308A2 (en) 2001-11-28
WO2000052528A3 (en) 2001-01-11

Similar Documents

Publication Publication Date Title
EP1676330B1 (en) Structuring of electrical functional layers by means of a transfer film and structuring the adhesive
DE19957111B4 (en) Semiconductor device with a flat protective adhesive film and manufacturing method therefor
EP1597781B1 (en) Method for producing a light-emitting device
DE4415132C2 (en) Process for shaping thin wafers and solar cells from crystalline silicon
DE69819445T2 (en) Process for making a pattern on a substrate
DE2451902A1 (en) HIGHLY SENSITIVE POSITIVES AND - RELIEF LAYERS AND THEIR APPLICATION FOR MASKING
DE1923825A1 (en) Plate-like arrangement for electrographic image transfer with an image-forming surface and method for making the same
DE3447357A1 (en) DRY FILM RESIST AND METHOD FOR PRODUCING RESIST PATTERNS
DE3539201A1 (en) MASK STRUCTURE FOR LITHOGRAPHY, METHOD FOR THEIR PRODUCTION AND LITHOGRAPHY METHOD
DE102016002213A1 (en) PV layer sequence obtained by a room temperature method and room temperature method for producing a PV layer sequence
DE2149056C3 (en) Process for reproducing images
EP0141389A2 (en) Process for the production of image-wise structured resists, and dry resist therefor
DE60035690T2 (en) METHOD FOR PRODUCING A DIGITALLY IMAGINATED TEMPLATE FOR A SCREEN PRINTING METHOD
DE3041168C2 (en)
DE1302727C2 (en) METHOD FOR PRODUCING A GRAIN LAYER PROVIDED WITH AT LEAST ONE ELECTRODE, PREFERABLY FOR SEMICONDUCTOR COMPONENTS
DE2932035C2 (en)
DE19909187C1 (en) Monograin membrane mask
DE2660951C2 (en) Multi-layer photosensitive material
DE2223809C2 (en) Process for producing an image
EP0457071A2 (en) Process for generating fine conductor lines
DE19527683A1 (en) Method of manufacturing a photomask for manufacturing a semiconductor device
DE3432846A1 (en) Preparation of a photosensitive resin sheet
EP0067984A1 (en) Method of etching chromium, and etchant compositions for carrying it out
DE2949462A1 (en) METHOD FOR PRODUCING COLORED IMAGES
DE10012245A1 (en) Ceramic green body with a platinum-containing, photo-structurable functional layer and process for its production

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP LV US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: A3

Designated state(s): JP LV US

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

WWE Wipo information: entry into national phase

Ref document number: 2000922424

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2000922424

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 2000922424

Country of ref document: EP