WO2000052528A3 - Monograin membrane mask - Google Patents

Monograin membrane mask Download PDF

Info

Publication number
WO2000052528A3
WO2000052528A3 PCT/DE2000/000708 DE0000708W WO0052528A3 WO 2000052528 A3 WO2000052528 A3 WO 2000052528A3 DE 0000708 W DE0000708 W DE 0000708W WO 0052528 A3 WO0052528 A3 WO 0052528A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
mask
membrane
resistant
state
Prior art date
Application number
PCT/DE2000/000708
Other languages
German (de)
French (fr)
Other versions
WO2000052528A2 (en
Inventor
Dieter Meissner
Original Assignee
Forschungszentrum Juelich Gmbh
Dieter Meissner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich Gmbh, Dieter Meissner filed Critical Forschungszentrum Juelich Gmbh
Priority to EP00922424A priority Critical patent/EP1157308A2/en
Publication of WO2000052528A2 publication Critical patent/WO2000052528A2/en
Publication of WO2000052528A3 publication Critical patent/WO2000052528A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/12—Production of screen printing forms or similar printing forms, e.g. stencils

Abstract

The invention relates to a mask, a method for the production of said mask, the mask itself and advantageous applications of the inventive mask. The method for the production of the mask comprises the following steps: using a monograin membrane consisting of light-sensitive particles; wherein said light-sensitive particles behave in such a way that they are resistant to light in a first state and not resistant to light in a second state; passing the monograin membrane from the light resistant to the non-light resistant state; exposing the membrane in accordance with a given structure; in accordance with said exposure, the particles fall off from the monograin membrane or dissolve; subsequently passing the membrane from the light-sensitive to the light insensitive state. The mask consequently consists of a monograin membrane with defined structures. Said mask can be used, for instance, in a silk screen or lithographic printing process or in the production of electrodes. One advantage of said process is that it is not necessary to always use photosensitive resist.
PCT/DE2000/000708 1999-03-03 2000-03-01 Monograin membrane mask WO2000052528A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP00922424A EP1157308A2 (en) 1999-03-03 2000-03-01 Monograin membrane mask

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19909187.0 1999-03-03
DE19909187A DE19909187C1 (en) 1999-03-03 1999-03-03 Monograin membrane mask

Publications (2)

Publication Number Publication Date
WO2000052528A2 WO2000052528A2 (en) 2000-09-08
WO2000052528A3 true WO2000052528A3 (en) 2001-01-11

Family

ID=7899490

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/000708 WO2000052528A2 (en) 1999-03-03 2000-03-01 Monograin membrane mask

Country Status (3)

Country Link
EP (1) EP1157308A2 (en)
DE (1) DE19909187C1 (en)
WO (1) WO2000052528A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2036153A1 (en) * 1970-07-21 1972-01-27 Siemens Ag Semiconductor exposure masks - with chalocogenide coating for accurate adjustment
US3787277A (en) * 1969-09-18 1974-01-22 Philips Corp Mono-grain layer membrane
JPS5329278A (en) * 1976-09-01 1978-03-18 Hitachi Ltd Treating method of organic waste matter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6510097A (en) * 1965-08-04 1967-02-06

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3787277A (en) * 1969-09-18 1974-01-22 Philips Corp Mono-grain layer membrane
DE2036153A1 (en) * 1970-07-21 1972-01-27 Siemens Ag Semiconductor exposure masks - with chalocogenide coating for accurate adjustment
JPS5329278A (en) * 1976-09-01 1978-03-18 Hitachi Ltd Treating method of organic waste matter

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ALTOSAAR ET AL: "monograin layers and membranes for photovoltaics", CONFERENCE RECORD OF THE IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE,US,NEW YORK, IEEE, VOL. CONF. 25, PAGE(S) 877-880, ISBN: 0-7803-3167-2, XP002121609 *
LERCEL M J ET AL: "SELF-ASSEMBLED MONOLAYER ELECTRON-BEAM RESISTS ON GAAS AND SIO2", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 11, no. 6, 1 November 1993 (1993-11-01), pages 2823 - 2828, XP000423435, ISSN: 0734-211X *
PATENT ABSTRACTS OF JAPAN vol. 002, no. 072 (C - 014) 31 May 1978 (1978-05-31) *

Also Published As

Publication number Publication date
EP1157308A2 (en) 2001-11-28
DE19909187C1 (en) 2000-10-26
WO2000052528A2 (en) 2000-09-08

Similar Documents

Publication Publication Date Title
KR970022491A (en) Photosensitive resin composition, photosensitive film, manufacturing method of phosphor frame using them, surface treated phosphor and manufacturing method thereof
US4123272A (en) Double-negative positive-working photohardenable elements
TW344129B (en) Pattern forming method and method of manufacturing liquid crystal display device
WO2000052528A3 (en) Monograin membrane mask
JPS5595324A (en) Manufacturing method of semiconductor device
TW200603253A (en) A semiconductor manufacturing method and an exposure mask
JPH10207046A (en) Highly sensitive photoresist containing inorganic substance, and highly sensitive dry film resist
CN1236116A (en) Exposure apparatus
KR890008928A (en) Positive Photoresist Composition and Positive Image Formation Method
US5169741A (en) Method for forming high sensitivity positive patterns employing a material containing a photosensitive compound having a diazo group, an alkaline-soluble polymer, a compound capable of adjusting the pH to 4 or less and a solvent
KR910001875A (en) Manufacturing Method of Exposure Mask
KR100318383B1 (en) Manufacturing Method of Liquid Crystal Display Panel
KR970008364A (en) Fine pattern formation method
KR930001301A (en) Semiconductor Pattern Formation Method
KR950025854A (en) Manufacturing method of fine pattern of semiconductor device
KR970016760A (en) Method of manufacturing transmittance control mask (TCM) using silicon-containing photoresist
JPH0229754A (en) Pattern forming method and pattern forming material
KR970067458A (en) Method for forming a black matrix coating film on a color brown tube panel
KR830005703A (en) Formation method of color surface fluorescent screen
KR910001460A (en) How to Improve Sidewall Profile of Photoresist
KR950027920A (en) Mask manufacturing method for semiconductor
KR950021045A (en) Method of forming fine pattern of semiconductor device
KR100263668B1 (en) Method for fabricating semiconductor device
KR970018104A (en) How to Form ITO Pattern on Glass of LCD
KR970049069A (en) Fine pattern exposure method of semiconductor device

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP LV US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: A3

Designated state(s): JP LV US

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

WWE Wipo information: entry into national phase

Ref document number: 2000922424

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2000922424

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 2000922424

Country of ref document: EP