WO2000068884A9 - Method and apparatus for inspecting reticles implementing parallel processing - Google Patents
Method and apparatus for inspecting reticles implementing parallel processingInfo
- Publication number
- WO2000068884A9 WO2000068884A9 PCT/US2000/011385 US0011385W WO0068884A9 WO 2000068884 A9 WO2000068884 A9 WO 2000068884A9 US 0011385 W US0011385 W US 0011385W WO 0068884 A9 WO0068884 A9 WO 0068884A9
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- data
- image
- sample
- processor
- processors
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 45
- 238000012545 processing Methods 0.000 title claims description 25
- 238000009826 distribution Methods 0.000 claims abstract description 24
- 238000007689 inspection Methods 0.000 claims description 44
- 230000007547 defect Effects 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 15
- 238000013461 design Methods 0.000 claims description 12
- 238000004891 communication Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000012360 testing method Methods 0.000 description 35
- 230000015654 memory Effects 0.000 description 22
- 230000003287 optical effect Effects 0.000 description 13
- 239000000872 buffer Substances 0.000 description 12
- 238000004458 analytical method Methods 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 10
- 238000005192 partition Methods 0.000 description 9
- 238000003860 storage Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010191 image analysis Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
- G06T7/0006—Industrial image inspection using a design-rule based approach
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
- G06T7/001—Industrial image inspection using an image reference approach
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
- G01N2021/95615—Inspecting patterns on the surface of objects using a comparative method with stored comparision signal
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/95676—Masks, reticles, shadow masks
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
Definitions
- a reticle or photomask is an optical element containing transparent and opaque, semi-transparent, and phase shifting regions which together define the pattern of coplanar features in an electronic device such as an integrated circuit.
- Reticles are used during photolithography to define specified regions of a semiconductor wafer for etching, ion implantation, or other fabrication process.
- an optical reticle's features are between about 1 and about 5 times larger than the corresponding features on the wafer.
- exposure systems e.g., x-ray, e-beam, and extreme ultraviolet
- the supervisor processor 532 may be coupled to local program and data memory (not shown) for facilitating programming.
- the supervisor processor 532 may take any suitable form for accomplishing the above-mentioned functions.
- the supervisor processor 532 may take the form of an R5000 processor with internal LI cache.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000616589A JP4638989B2 (en) | 1999-05-05 | 2000-04-28 | Method and apparatus for reticle inspection in parallel processing |
EP00928494A EP1175660B1 (en) | 1999-05-05 | 2000-04-28 | Method and apparatus for inspecting reticles implementing parallel processing |
DE60032762T DE60032762T2 (en) | 1999-05-05 | 2000-04-28 | Apparatus and techniques for examining parallel processing reticles |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13287299P | 1999-05-05 | 1999-05-05 | |
US60/132,872 | 1999-05-05 | ||
US09/449,022 US7106895B1 (en) | 1999-05-05 | 1999-11-24 | Method and apparatus for inspecting reticles implementing parallel processing |
US09/449,022 | 1999-11-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2000068884A1 WO2000068884A1 (en) | 2000-11-16 |
WO2000068884A9 true WO2000068884A9 (en) | 2002-06-06 |
Family
ID=26830816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/011385 WO2000068884A1 (en) | 1999-05-05 | 2000-04-28 | Method and apparatus for inspecting reticles implementing parallel processing |
Country Status (5)
Country | Link |
---|---|
US (2) | US7106895B1 (en) |
EP (1) | EP1175660B1 (en) |
JP (1) | JP4638989B2 (en) |
DE (1) | DE60032762T2 (en) |
WO (1) | WO2000068884A1 (en) |
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US9170211B2 (en) | 2011-03-25 | 2015-10-27 | Kla-Tencor Corp. | Design-based inspection using repeating structures |
US9189844B2 (en) | 2012-10-15 | 2015-11-17 | Kla-Tencor Corp. | Detecting defects on a wafer using defect-specific information |
US9311698B2 (en) | 2013-01-09 | 2016-04-12 | Kla-Tencor Corp. | Detecting defects on a wafer using template image matching |
US9310320B2 (en) | 2013-04-15 | 2016-04-12 | Kla-Tencor Corp. | Based sampling and binning for yield critical defects |
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US7106895B1 (en) * | 1999-05-05 | 2006-09-12 | Kla-Tencor | Method and apparatus for inspecting reticles implementing parallel processing |
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- 2000-04-28 WO PCT/US2000/011385 patent/WO2000068884A1/en active IP Right Grant
- 2000-04-28 EP EP00928494A patent/EP1175660B1/en not_active Expired - Lifetime
- 2000-04-28 DE DE60032762T patent/DE60032762T2/en not_active Expired - Lifetime
- 2000-04-28 JP JP2000616589A patent/JP4638989B2/en not_active Expired - Lifetime
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2006
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Cited By (6)
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US8923600B2 (en) | 2005-11-18 | 2014-12-30 | Kla-Tencor Technologies Corp. | Methods and systems for utilizing design data in combination with inspection data |
US9170211B2 (en) | 2011-03-25 | 2015-10-27 | Kla-Tencor Corp. | Design-based inspection using repeating structures |
US9189844B2 (en) | 2012-10-15 | 2015-11-17 | Kla-Tencor Corp. | Detecting defects on a wafer using defect-specific information |
US9134254B2 (en) | 2013-01-07 | 2015-09-15 | Kla-Tencor Corp. | Determining a position of inspection system output in design data space |
US9311698B2 (en) | 2013-01-09 | 2016-04-12 | Kla-Tencor Corp. | Detecting defects on a wafer using template image matching |
US9310320B2 (en) | 2013-04-15 | 2016-04-12 | Kla-Tencor Corp. | Based sampling and binning for yield critical defects |
Also Published As
Publication number | Publication date |
---|---|
EP1175660A1 (en) | 2002-01-30 |
JP2002544602A (en) | 2002-12-24 |
JP4638989B2 (en) | 2011-02-23 |
US7724939B2 (en) | 2010-05-25 |
EP1175660B1 (en) | 2007-01-03 |
WO2000068884A1 (en) | 2000-11-16 |
US20060269119A1 (en) | 2006-11-30 |
DE60032762T2 (en) | 2007-11-08 |
DE60032762D1 (en) | 2007-02-15 |
US7106895B1 (en) | 2006-09-12 |
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