WO2000074896A8 - Method of modifying a surface of a structured wafer - Google Patents

Method of modifying a surface of a structured wafer

Info

Publication number
WO2000074896A8
WO2000074896A8 PCT/US1999/024445 US9924445W WO0074896A8 WO 2000074896 A8 WO2000074896 A8 WO 2000074896A8 US 9924445 W US9924445 W US 9924445W WO 0074896 A8 WO0074896 A8 WO 0074896A8
Authority
WO
WIPO (PCT)
Prior art keywords
phase
modifying
modified
abrasive article
structured wafer
Prior art date
Application number
PCT/US1999/024445
Other languages
French (fr)
Other versions
WO2000074896A1 (en
Inventor
Daniel B Pendergrass Jr
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Priority to BR9917355-7A priority Critical patent/BR9917355A/en
Priority to AT99956604T priority patent/ATE272465T1/en
Priority to EP99956604A priority patent/EP1189729B1/en
Priority to DE69919230T priority patent/DE69919230T2/en
Priority to AU13175/00A priority patent/AU1317500A/en
Priority to CA002374004A priority patent/CA2374004A1/en
Priority to JP2001501410A priority patent/JP2003501820A/en
Publication of WO2000074896A1 publication Critical patent/WO2000074896A1/en
Publication of WO2000074896A8 publication Critical patent/WO2000074896A8/en
Priority to HK02106259.1A priority patent/HK1044504B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245Pads with fixed abrasives
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic

Abstract

A method of modifying a surface comprising the steps of: (a) contacting the surface to be modified with a working surface (47) of an abrasive article (40), the abrasive article comprising a phase separated polymer (44) having a first phase and a second phase, the first phase being harder than the second phase; and (b) relatively moving the surface to be modified and the fixed abrasive article to remove material from the surface to be modified in the absence of an abrasive slurry.
PCT/US1999/024445 1999-06-09 1999-10-18 Method of modifying a surface of a structured wafer WO2000074896A1 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
BR9917355-7A BR9917355A (en) 1999-06-09 1999-10-18 Process of modifying a surface
AT99956604T ATE272465T1 (en) 1999-06-09 1999-10-18 METHOD FOR SURFACE MODIFICATION OF A STRUCTURED WAFER
EP99956604A EP1189729B1 (en) 1999-06-09 1999-10-18 Method of modifying a surface of a structured wafer
DE69919230T DE69919230T2 (en) 1999-06-09 1999-10-18 METHOD FOR SURFACE MODIFICATION OF A STRUCTURED WAFER
AU13175/00A AU1317500A (en) 1999-06-09 1999-10-18 Method of modifying a surface of a structured wafer
CA002374004A CA2374004A1 (en) 1999-06-09 1999-10-18 Method of modifying a surface of a structured wafer
JP2001501410A JP2003501820A (en) 1999-06-09 1999-10-18 Surface modification method for structured wafer
HK02106259.1A HK1044504B (en) 1999-06-09 2002-08-23 Method of modifying a surface of a structured wafer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/328,916 1999-06-09
US09/328,916 US6234875B1 (en) 1999-06-09 1999-06-09 Method of modifying a surface

Publications (2)

Publication Number Publication Date
WO2000074896A1 WO2000074896A1 (en) 2000-12-14
WO2000074896A8 true WO2000074896A8 (en) 2001-03-29

Family

ID=23283024

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/024445 WO2000074896A1 (en) 1999-06-09 1999-10-18 Method of modifying a surface of a structured wafer

Country Status (14)

Country Link
US (1) US6234875B1 (en)
EP (1) EP1189729B1 (en)
JP (1) JP2003501820A (en)
KR (1) KR100638289B1 (en)
CN (1) CN1352589A (en)
AT (1) ATE272465T1 (en)
AU (1) AU1317500A (en)
BR (1) BR9917355A (en)
CA (1) CA2374004A1 (en)
DE (1) DE69919230T2 (en)
ES (1) ES2224717T3 (en)
HK (1) HK1044504B (en)
TW (1) TWI231245B (en)
WO (1) WO2000074896A1 (en)

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US6390890B1 (en) 1999-02-06 2002-05-21 Charles J Molnar Finishing semiconductor wafers with a fixed abrasive finishing element
US6641463B1 (en) 1999-02-06 2003-11-04 Beaver Creek Concepts Inc Finishing components and elements
US6413153B1 (en) 1999-04-26 2002-07-02 Beaver Creek Concepts Inc Finishing element including discrete finishing members
TW501197B (en) * 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
US7736687B2 (en) 2006-01-31 2010-06-15 Advance Bio Prosthetic Surfaces, Ltd. Methods of making medical devices
US6976905B1 (en) * 2000-06-16 2005-12-20 Cabot Microelectronics Corporation Method for polishing a memory or rigid disk with a phosphate ion-containing polishing system
JP4177100B2 (en) * 2000-12-01 2008-11-05 東洋ゴム工業株式会社 Polishing pad, method for producing the same, and cushion layer for polishing pad
US6572463B1 (en) * 2000-12-27 2003-06-03 Lam Research Corp. Methods for making reinforced wafer polishing pads utilizing direct casting and apparatuses implementing the same
US6561889B1 (en) 2000-12-27 2003-05-13 Lam Research Corporation Methods for making reinforced wafer polishing pads and apparatuses implementing the same
US6612916B2 (en) * 2001-01-08 2003-09-02 3M Innovative Properties Company Article suitable for chemical mechanical planarization processes
US6612917B2 (en) * 2001-02-07 2003-09-02 3M Innovative Properties Company Abrasive article suitable for modifying a semiconductor wafer
US6632129B2 (en) * 2001-02-15 2003-10-14 3M Innovative Properties Company Fixed abrasive article for use in modifying a semiconductor wafer
US6627550B2 (en) * 2001-03-27 2003-09-30 Micron Technology, Inc. Post-planarization clean-up
US6629879B1 (en) * 2001-05-08 2003-10-07 Advanced Micro Devices, Inc. Method of controlling barrier metal polishing processes based upon X-ray fluorescence measurements
US6811470B2 (en) 2001-07-16 2004-11-02 Applied Materials Inc. Methods and compositions for chemical mechanical polishing shallow trench isolation substrates
US7199056B2 (en) * 2002-02-08 2007-04-03 Applied Materials, Inc. Low cost and low dishing slurry for polysilicon CMP
US6943114B2 (en) * 2002-02-28 2005-09-13 Infineon Technologies Ag Integration scheme for metal gap fill, with fixed abrasive CMP
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
CN100551623C (en) * 2003-01-10 2009-10-21 3M创新有限公司 Be applied to the mat structure of chemical-mechanical planarization
US6908366B2 (en) * 2003-01-10 2005-06-21 3M Innovative Properties Company Method of using a soft subpad for chemical mechanical polishing
US6951504B2 (en) * 2003-03-20 2005-10-04 3M Innovative Properties Company Abrasive article with agglomerates and method of use
SG168412A1 (en) * 2003-06-03 2011-02-28 Nexplanar Corp Synthesis of a functionally graded pad for chemical mechanical planarization
DE602005006326T2 (en) * 2004-02-05 2009-07-09 Jsr Corp. Chemical-mechanical polishing pad and polishing process
US7086939B2 (en) * 2004-03-19 2006-08-08 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring with integral polymer backing
US7485028B2 (en) 2004-03-19 2009-02-03 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same
US20050252547A1 (en) * 2004-05-11 2005-11-17 Applied Materials, Inc. Methods and apparatus for liquid chemical delivery
US7150770B2 (en) * 2004-06-18 2006-12-19 3M Innovative Properties Company Coated abrasive article with tie layer, and method of making and using the same
US20050282029A1 (en) * 2004-06-18 2005-12-22 3M Innovative Properties Company Polymerizable composition and articles therefrom
US7150771B2 (en) * 2004-06-18 2006-12-19 3M Innovative Properties Company Coated abrasive article with composite tie layer, and method of making and using the same
US20060088976A1 (en) * 2004-10-22 2006-04-27 Applied Materials, Inc. Methods and compositions for chemical mechanical polishing substrates
US7344574B2 (en) * 2005-06-27 2008-03-18 3M Innovative Properties Company Coated abrasive article, and method of making and using the same
US7344575B2 (en) * 2005-06-27 2008-03-18 3M Innovative Properties Company Composition, treated backing, and abrasive articles containing the same
TWI338329B (en) * 2005-07-11 2011-03-01 Fujitsu Semiconductor Ltd Manufacture of semiconductor device with cmp
US8016644B2 (en) * 2007-07-13 2011-09-13 UNIVERSITé LAVAL Method and apparatus for micro-machining a surface
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
DE102009025242B4 (en) * 2009-06-17 2013-05-23 Siltronic Ag Method for two-sided chemical grinding of a semiconductor wafer
DE102009033206A1 (en) * 2009-07-15 2011-01-27 Brand, Guido Polishing method and polishing apparatus for correcting geometric deviation errors on precision surfaces
PL2665583T3 (en) * 2011-01-22 2017-01-31 Rud. Starcke Gmbh & Co. Kg Grinding body
JP5934053B2 (en) * 2012-08-14 2016-06-15 セイコープレシジョン株式会社 X-ray processing equipment
US10071461B2 (en) 2014-04-03 2018-09-11 3M Innovative Properties Company Polishing pads and systems and methods of making and using the same
TWI769988B (en) 2015-10-07 2022-07-11 美商3M新設資產公司 Polishing pads and systems and methods of making and using the same
CN111087973B (en) * 2019-12-17 2021-07-27 吉林大学 Preparation device and preparation method of vegetable fiber fermentation modified reinforced friction material

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US5399528A (en) 1989-06-01 1995-03-21 Leibovitz; Jacques Multi-layer fabrication in integrated circuit systems
US5152917B1 (en) 1991-02-06 1998-01-13 Minnesota Mining & Mfg Structured abrasive article
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US5759917A (en) 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
KR100487455B1 (en) 1997-01-13 2005-05-09 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 Polymeric Polishing Pad Having Photolithographically Induced Surface Pattern(s) and Methods Relating Thereto
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US6224465B1 (en) 1997-06-26 2001-05-01 Stuart L. Meyer Methods and apparatus for chemical mechanical planarization using a microreplicated surface
US6121143A (en) * 1997-09-19 2000-09-19 3M Innovative Properties Company Abrasive articles comprising a fluorochemical agent for wafer surface modification
US6056794A (en) * 1999-03-05 2000-05-02 3M Innovative Properties Company Abrasive articles having bonding systems containing abrasive particles

Also Published As

Publication number Publication date
CA2374004A1 (en) 2000-12-14
ES2224717T3 (en) 2005-03-01
TWI231245B (en) 2005-04-21
WO2000074896A1 (en) 2000-12-14
DE69919230T2 (en) 2005-08-04
DE69919230D1 (en) 2004-09-09
HK1044504B (en) 2005-06-30
KR20020011435A (en) 2002-02-08
EP1189729B1 (en) 2004-08-04
AU1317500A (en) 2000-12-28
HK1044504A1 (en) 2002-10-25
US6234875B1 (en) 2001-05-22
CN1352589A (en) 2002-06-05
ATE272465T1 (en) 2004-08-15
BR9917355A (en) 2002-02-26
KR100638289B1 (en) 2006-10-26
EP1189729A1 (en) 2002-03-27
JP2003501820A (en) 2003-01-14

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