WO2001021294A3 - Pattern dependent surface profile evolution of electrochemically deposited metal - Google Patents

Pattern dependent surface profile evolution of electrochemically deposited metal Download PDF

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Publication number
WO2001021294A3
WO2001021294A3 PCT/US2000/040985 US0040985W WO0121294A3 WO 2001021294 A3 WO2001021294 A3 WO 2001021294A3 US 0040985 W US0040985 W US 0040985W WO 0121294 A3 WO0121294 A3 WO 0121294A3
Authority
WO
WIPO (PCT)
Prior art keywords
workpiece
recessed microstructures
deposited
surface profile
deposited metal
Prior art date
Application number
PCT/US2000/040985
Other languages
French (fr)
Other versions
WO2001021294A2 (en
Inventor
Thomas L Ritzdorf
Dakin J Fulton
Linlin Chen
Original Assignee
Semitool Inc
Thomas L Ritzdorf
Dakin J Fulton
Linlin Chen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semitool Inc, Thomas L Ritzdorf, Dakin J Fulton, Linlin Chen filed Critical Semitool Inc
Priority to EP00975648A priority Critical patent/EP1225972A4/en
Publication of WO2001021294A2 publication Critical patent/WO2001021294A2/en
Publication of WO2001021294A3 publication Critical patent/WO2001021294A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C25D5/611—Smooth layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Abstract

A process for depositing a metal structure, such as copper interconnects, on a surface of a workpiece (10), such as a semiconductor wafer, the workpiece surface defining a plurality of recessed microstructures (14). The surface of the workpiece is exposed to an electroplating bath including copper ions to be deposited on the surface and an organic additive that influences the metal ions to be preferentially deposited within the recessed microstructures. Electroplating power is then provided between the exposed surface of the workpiece and the anode for a first time period such that the copper ions are deposited on the surface and nominally fill the recessed microstructures. The electroplating power is then reversed between the anode and exposed surface of the workpiece during at least a portion of a second time period to limit the deposition of further copper (20) over the nominally filled recessed microstructures, relative to the remainder of the surface, to ameliorate the development of a 'momentum plating' overburden bump of metal over the recessed microstructures.
PCT/US2000/040985 1999-09-24 2000-09-25 Pattern dependent surface profile evolution of electrochemically deposited metal WO2001021294A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP00975648A EP1225972A4 (en) 1999-09-24 2000-09-25 Pattern dependent surface profile evolution of electrochemically deposited metal

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15595999P 1999-09-24 1999-09-24
US60/155,959 1999-09-24

Publications (2)

Publication Number Publication Date
WO2001021294A2 WO2001021294A2 (en) 2001-03-29
WO2001021294A3 true WO2001021294A3 (en) 2001-10-04

Family

ID=22557472

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/040985 WO2001021294A2 (en) 1999-09-24 2000-09-25 Pattern dependent surface profile evolution of electrochemically deposited metal

Country Status (2)

Country Link
EP (1) EP1225972A4 (en)
WO (1) WO2001021294A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10223957B4 (en) * 2002-05-31 2006-12-21 Advanced Micro Devices, Inc., Sunnyvale An improved method of electroplating copper on a patterned dielectric layer
DE60336539D1 (en) * 2002-12-20 2011-05-12 Shipley Co Llc Method for electroplating with reversed pulse current
DE10314502B4 (en) * 2003-03-31 2008-06-12 Advanced Micro Devices, Inc., Sunnyvale Process for the electrolytic coating of a semiconductor structure
DE102004041813A1 (en) * 2004-08-26 2006-03-02 Siemens Ag Surface having an adhesion reducing microstructure and method of making the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770598A (en) * 1972-01-21 1973-11-06 Oxy Metal Finishing Corp Electrodeposition of copper from acid baths
US4396467A (en) * 1980-10-27 1983-08-02 General Electric Company Periodic reverse current pulsing to form uniformly sized feed through conductors
US5223118A (en) * 1991-03-08 1993-06-29 Shipley Company Inc. Method for analyzing organic additives in an electroplating bath
US5972192A (en) * 1997-07-23 1999-10-26 Advanced Micro Devices, Inc. Pulse electroplating copper or copper alloys

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8801827D0 (en) * 1988-01-27 1988-02-24 Jct Controls Ltd Improvements in electrochemical processes

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770598A (en) * 1972-01-21 1973-11-06 Oxy Metal Finishing Corp Electrodeposition of copper from acid baths
US4396467A (en) * 1980-10-27 1983-08-02 General Electric Company Periodic reverse current pulsing to form uniformly sized feed through conductors
US5223118A (en) * 1991-03-08 1993-06-29 Shipley Company Inc. Method for analyzing organic additives in an electroplating bath
US5972192A (en) * 1997-07-23 1999-10-26 Advanced Micro Devices, Inc. Pulse electroplating copper or copper alloys

Also Published As

Publication number Publication date
EP1225972A4 (en) 2006-08-30
WO2001021294A2 (en) 2001-03-29
EP1225972A2 (en) 2002-07-31

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