WO2001031683A8 - Plasma doping system comprising a hollow cathode - Google Patents
Plasma doping system comprising a hollow cathodeInfo
- Publication number
- WO2001031683A8 WO2001031683A8 PCT/US2000/025803 US0025803W WO0131683A8 WO 2001031683 A8 WO2001031683 A8 WO 2001031683A8 US 0025803 W US0025803 W US 0025803W WO 0131683 A8 WO0131683 A8 WO 0131683A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- hollow cathode
- plasma doping
- target
- cathode
- doping system
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32596—Hollow cathodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00966770A EP1249032A1 (en) | 1999-10-27 | 2000-09-20 | Plasma doping system comprising a hollow cathode |
JP2001534185A JP4666448B2 (en) | 1999-10-27 | 2000-09-20 | A plasma doping system including a hollow cathode. |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/427,869 | 1999-10-27 | ||
US09/427,869 US6182604B1 (en) | 1999-10-27 | 1999-10-27 | Hollow cathode for plasma doping system |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001031683A1 WO2001031683A1 (en) | 2001-05-03 |
WO2001031683A8 true WO2001031683A8 (en) | 2001-10-25 |
Family
ID=23696612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/025803 WO2001031683A1 (en) | 1999-10-27 | 2000-09-20 | Plasma doping system comprising a hollow cathode |
Country Status (6)
Country | Link |
---|---|
US (2) | US6182604B1 (en) |
EP (1) | EP1249032A1 (en) |
JP (1) | JP4666448B2 (en) |
KR (1) | KR100662678B1 (en) |
TW (1) | TW472290B (en) |
WO (1) | WO2001031683A1 (en) |
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US6716727B2 (en) | 2001-10-26 | 2004-04-06 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for plasma doping and ion implantation in an integrated processing system |
US20030079688A1 (en) * | 2001-10-26 | 2003-05-01 | Walther Steven R. | Methods and apparatus for plasma doping by anode pulsing |
US20030116089A1 (en) * | 2001-12-04 | 2003-06-26 | Walther Steven R. | Plasma implantation system and method with target movement |
US20030101935A1 (en) * | 2001-12-04 | 2003-06-05 | Walther Steven R. | Dose uniformity control for plasma doping systems |
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US7425709B2 (en) * | 2003-07-22 | 2008-09-16 | Veeco Instruments, Inc. | Modular ion source |
US20050211546A1 (en) * | 2004-03-26 | 2005-09-29 | Applied Materials, Inc. | Reactive sputter deposition plasma process using an ion shower grid |
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US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US7429532B2 (en) * | 2005-08-08 | 2008-09-30 | Applied Materials, Inc. | Semiconductor substrate process using an optically writable carbon-containing mask |
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US7312148B2 (en) * | 2005-08-08 | 2007-12-25 | Applied Materials, Inc. | Copper barrier reflow process employing high speed optical annealing |
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US20070170867A1 (en) * | 2006-01-24 | 2007-07-26 | Varian Semiconductor Equipment Associates, Inc. | Plasma Immersion Ion Source With Low Effective Antenna Voltage |
US20100330787A1 (en) * | 2006-08-18 | 2010-12-30 | Piero Sferlazzo | Apparatus and method for ultra-shallow implantation in a semiconductor device |
JP4143684B2 (en) * | 2006-10-03 | 2008-09-03 | 松下電器産業株式会社 | Plasma doping method and apparatus |
US20080132046A1 (en) * | 2006-12-04 | 2008-06-05 | Varian Semiconductor Equipment Associates, Inc. | Plasma Doping With Electronically Controllable Implant Angle |
US20080169183A1 (en) * | 2007-01-16 | 2008-07-17 | Varian Semiconductor Equipment Associates, Inc. | Plasma Source with Liner for Reducing Metal Contamination |
WO2008089168A2 (en) * | 2007-01-19 | 2008-07-24 | Applied Materials, Inc. | Plasma immersion chamber |
US7820533B2 (en) * | 2007-02-16 | 2010-10-26 | Varian Semiconductor Equipment Associates, Inc. | Multi-step plasma doping with improved dose control |
US20090017229A1 (en) * | 2007-07-10 | 2009-01-15 | Varian Semiconductor Equipment Associates, Inc. | Processing System Platen having a Variable Thermal Conductivity Profile |
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KR101081350B1 (en) * | 2009-05-11 | 2011-11-09 | 엘아이지에이디피 주식회사 | Apparatus for plasma doping |
US8664561B2 (en) * | 2009-07-01 | 2014-03-04 | Varian Semiconductor Equipment Associates, Inc. | System and method for selectively controlling ion composition of ion sources |
US8753725B2 (en) | 2011-03-11 | 2014-06-17 | Southwest Research Institute | Method for plasma immersion ion processing and depositing coatings in hollow substrates using a heated center electrode |
FR3004465B1 (en) * | 2013-04-11 | 2015-05-08 | Ion Beam Services | ION IMPLANTATION MACHINE HAVING INCREASED PRODUCTIVITY |
US10553411B2 (en) | 2015-09-10 | 2020-02-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Ion collector for use in plasma systems |
KR102455231B1 (en) | 2017-10-23 | 2022-10-18 | 삼성전자주식회사 | hallow cathode for generating pixelated plasma, manufacturing apparatus of semiconductor device and manufacturing method of the same |
US20190256973A1 (en) * | 2018-02-21 | 2019-08-22 | Southwest Research Institute | Method and Apparatus for Depositing Diamond-Like Carbon Coatings |
CN110828272B (en) * | 2018-08-09 | 2022-09-16 | 北京北方华创微电子装备有限公司 | Chamber liner, lower electrode device and semiconductor processing equipment |
Family Cites Families (17)
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US4135097A (en) | 1977-05-05 | 1979-01-16 | International Business Machines Corporation | Ion implantation apparatus for controlling the surface potential of a target surface |
US4595837A (en) | 1983-09-16 | 1986-06-17 | Rca Corporation | Method for preventing arcing in a device during ion-implantation |
US4786814A (en) | 1983-09-16 | 1988-11-22 | General Electric Company | Method of reducing electrostatic charge on ion-implanted devices |
US4764394A (en) | 1987-01-20 | 1988-08-16 | Wisconsin Alumni Research Foundation | Method and apparatus for plasma source ion implantation |
GB9010000D0 (en) * | 1990-05-03 | 1990-06-27 | Stc Plc | Phosphide films |
US5212425A (en) * | 1990-10-10 | 1993-05-18 | Hughes Aircraft Company | Ion implantation and surface processing method and apparatus |
CA2052080C (en) * | 1990-10-10 | 1997-01-14 | Jesse N. Matossian | Plasma source arrangement for ion implantation |
KR930021034A (en) * | 1992-03-31 | 1993-10-20 | 다니이 아끼오 | Plasma generating method and apparatus for generating same |
US5289010A (en) * | 1992-12-08 | 1994-02-22 | Wisconsin Alumni Research Foundation | Ion purification for plasma ion implantation |
US5572038A (en) | 1993-05-07 | 1996-11-05 | Varian Associates, Inc. | Charge monitor for high potential pulse current dose measurement apparatus and method |
US5354381A (en) | 1993-05-07 | 1994-10-11 | Varian Associates, Inc. | Plasma immersion ion implantation (PI3) apparatus |
US5711812A (en) | 1995-06-06 | 1998-01-27 | Varian Associates, Inc. | Apparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processes |
EP0876677B1 (en) * | 1996-01-23 | 1999-07-21 | Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. | Ion source for an ion beam arrangement |
US5654043A (en) * | 1996-10-10 | 1997-08-05 | Eaton Corporation | Pulsed plate plasma implantation system and method |
US5911832A (en) | 1996-10-10 | 1999-06-15 | Eaton Corporation | Plasma immersion implantation with pulsed anode |
US5970907A (en) * | 1997-01-27 | 1999-10-26 | Canon Kabushiki Kaisha | Plasma processing apparatus |
US6050218A (en) | 1998-09-28 | 2000-04-18 | Eaton Corporation | Dosimetry cup charge collection in plasma immersion ion implantation |
-
1999
- 1999-10-27 US US09/427,869 patent/US6182604B1/en not_active Expired - Lifetime
-
2000
- 2000-09-20 KR KR1020027005399A patent/KR100662678B1/en not_active IP Right Cessation
- 2000-09-20 JP JP2001534185A patent/JP4666448B2/en not_active Expired - Fee Related
- 2000-09-20 EP EP00966770A patent/EP1249032A1/en not_active Withdrawn
- 2000-09-20 WO PCT/US2000/025803 patent/WO2001031683A1/en not_active Application Discontinuation
- 2000-10-17 TW TW089121644A patent/TW472290B/en not_active IP Right Cessation
- 2000-10-25 US US09/695,959 patent/US6500496B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100662678B1 (en) | 2007-01-02 |
TW472290B (en) | 2002-01-11 |
KR20020060958A (en) | 2002-07-19 |
JP4666448B2 (en) | 2011-04-06 |
US6182604B1 (en) | 2001-02-06 |
WO2001031683A1 (en) | 2001-05-03 |
EP1249032A1 (en) | 2002-10-16 |
JP2003513441A (en) | 2003-04-08 |
US6500496B1 (en) | 2002-12-31 |
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