WO2001034339A1 - Hermetic sealing of target/backing plate assemblies using electron beam melted indium or tin - Google Patents

Hermetic sealing of target/backing plate assemblies using electron beam melted indium or tin Download PDF

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Publication number
WO2001034339A1
WO2001034339A1 PCT/US2000/031037 US0031037W WO0134339A1 WO 2001034339 A1 WO2001034339 A1 WO 2001034339A1 US 0031037 W US0031037 W US 0031037W WO 0134339 A1 WO0134339 A1 WO 0134339A1
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WO
WIPO (PCT)
Prior art keywords
solder
target
backing plate
assembly
tin
Prior art date
Application number
PCT/US2000/031037
Other languages
French (fr)
Inventor
David B. Smathers
Dorian Heimanson
Michael Gutkin
Original Assignee
Tosoh Smd, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Smd, Inc. filed Critical Tosoh Smd, Inc.
Priority to US10/129,585 priority Critical patent/US6774339B1/en
Publication of WO2001034339A1 publication Critical patent/WO2001034339A1/en

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/0008Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/005Soldering by means of radiant energy
    • B23K1/0056Soldering by means of radiant energy soldering by means of beams, e.g. lasers, E.B.
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/008Soldering within a furnace
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/14Soldering, e.g. brazing, or unsoldering specially adapted for soldering seams
    • B23K1/18Soldering, e.g. brazing, or unsoldering specially adapted for soldering seams circumferential seams, e.g. of shells
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/20Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/001Interlayers, transition pieces for metallurgical bonding of workpieces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/26Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/26Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262Sn as the principal constituent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/34Coated articles, e.g. plated or painted; Surface treated articles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/08Non-ferrous metals or alloys
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/08Non-ferrous metals or alloys
    • B23K2103/10Aluminium or alloys thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/08Non-ferrous metals or alloys
    • B23K2103/12Copper or alloys thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/18Dissimilar materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)

Abstract

A method of sealing the edge of a solder bonded target assembly by heating the edge of the solder bond line to locally melt the solder. The target assembly is rotated to move the molten bead continuously around the assembly a full 360 degrees. The local melting of the solder may be acomplished through the use of an electron beam welder in a vacuum.

Description

Concise Technical Description of Invention
Descriptive Title: Hermetic Sealing of Target/Backing Plate Assemblies Using Electron Beam Melted Indium or Tin
A. General Purpose of the Invention
CVC approached TSMD with the customer driven need to reduce the impact of virtual leaks from solder bonded assemblies on vacuum quality in their sputtering system. The purpose is to cut the bond line off from the vacuum by a coherent, fully dense metal seal.
B. Prior Art (previous) Methods, Materials, or Devices Performing Function on this Invention
Solder bonding is generally done using either a tin eutectic alloy (such as tin 3.5 weight percent silver) or pure indium. The bonding process is performed in air or under a protective atmosphere and a solder flux may be used to break oxide barriers on the metal being bonded. Bonding in air or under a protective atmosphere can lead to trapped pockets containing gas. It is possible for porosity within the bond layer to allow the trapped gas to escape over at a low leak rate from the bond line between the target and the backing plate.
The most common approach to eliminate virtual leakage from a solder bond is to eliminate the solder bond entirely. This can be done several ways. The most simple is to make the target/backing plate a monolithic assembly, i.e. one piece. The second method is to diffusion bond the target to the backing plate. Diffusion bonding is performed under high pressure and temperature and a vacuum exists inside the diffusion bonding assembly prior to the application of heat and pressure. A third method involves electron beam welding the target to the backing plate. Electron beam welding works if the joint between the target and backing plate is ductile. It is not possible to directly weld aluminum to copper.
C. Disadvantages of Prior Art
It is not practical to solder bond in a vacuum. Thus, trapped pockets of gas are inevitable in a solder bond.
A monolithic assembly is possible when the value of the material is not too high and the target material is sufficiently strong and ductile to bear the structural demands of the backing plate. Deflection can be a problem if the target alloy is not very strong. Some materials are also brittle. Some backing plate designs involve internal cooling channels and this is the case with the current CVC design. A monolithic assembly would involve redesigning the target/backing plate to a two piece setup with channels cut in the back of the monolithic piece (similar to the Ulvac ZX-1000). Diffusion bonding is done at temperatures between 300 and 600 degrees C. This can be detrimental to the microstructure of some materials and also will leave residual stress in the assembly if the thermal expansion coefficients of the target and backing plate are different. Brittle target materials are difficult to diffusion bond because of the bending moment and stress caused by the differential thermal expansion and the application of pressure at high temperature. Not all materials can be diffusion bonded to copper, aluminum or molybdenum, the most common backing plate materials. The same issue regarding internal cooling channels exists for diffusion bonded targets.
Electron beam welding the target to the backing plate is possible only if the backing plate and target materials will form a ductile alloy.
D. Identification of Component Parts, or Steps, and Explanation of Mode of Operation of Invention
The invention is to use indium or pure tin to hermetically seal the target/backing plate interface.
Method:
1) Solder Bond target to backing plate using conventional bonding practice
2) Clean excess solder from the backing plate/target assembly
3) Lay a shim of the sealing material (In or Sn) at the target/backing plate interface
4) Use an Electron Beam welder (low power in vacuum) and run a molten bead around the target/backing plate interface until at least one complete revolution is made. The target will be on a rotating platter of some kind.
5) A laser may be substituted for the electron beam. ' -• •' .-! . ; • • ■:-■
! , ■ • i- ; • i Biggest concern would be lack of vacuum to avoid trapped gas in the weld region.
The Indium metal (or Tin) will wet the surface of the backing plate and the target and the molten pool will solidify 100% dense because of the speed and vacuum. The welded bead will seal off the bond line and permanently close off the trapped gas areas between the target and backing plate.
Indium may be preferable to Tin because of its tendency to wet most materials. Indium wetting may be enhanced by rubbing pure indium against the area to be coated.
This method is different from electron beam welding the target to the backing plate because the target material and the backing plate material do not alloy together. There may be a very small region at the Indium (or Tin) metal interfaces form inter- metallics which are no different than if the indium or tin had been soldered to those surfaces in the traditional manner. In addition, the target may be removed by simply heating the assembly above the melting point of the solder and the backing plate can be re-used.
Electron beam welding is suggested here because a vacuum is required to operate the welder. Making the hermetic seal in a vacuum environment will reduce the chances of porosity impacting the quality of the seal. Trapped gas may cause an eruption which could compromise the seal.
TIG welding may also work to make this seal. There is a higher probability of trapped gas causing bubbles in the seal with TIG welding.
E. Alternate Embodiments of the Invention
1 ) Use of the same technology on other backing plate assemblies besides the CVC design.
2) TIG welding of the seal 3)
F. Advantages of the Invention Over the Prior Art
1) More materials can be bonded together with no virtual leak.
2) Grain structure of the target material can be preserved
3) The basic backing plate construction does not have to be modified to achieve the desired result. Backing plates with internal cooling channels can be used.
G. Features of the Invention Believed to be New
1) Modifying the backing plate/target dimensions to promote a hermetic seal with an electron beam welder.
2) Ignoring the content of the majority of the bond area and focusing only on the edge.
3) Use of an electron beam welder to run a solder bead in vacuum 4)
Figure imgf000006_0001
0.100"
Figure imgf000006_0002
Design option for trial. Make an internal resevoir by machining a trough near the outer edge of the target. After bonding, the e-beam will be used to heat the outer edge of the target zone until the solder starts to melt. The trough will allow solder to flow from both sides to fill the zone. While this may cause some undercutting at the very edge of the target, there will be no opening into trapped pockets under the target.
The trough is a groove cut with an outer diameter of 11.80" and a 5 degree taper to a depth of 0.020". The tolerance should not be too tight on the taper or the depth as it will be almost impossible to measure on repeat uses. Between uses, the trough can be re-cut prior to the next bonding attempt.
TSMD has an old CVC style backing plate which we can do a soldering experiment on. TSMD can not check the vacuum quality of the result.
The trial should be done with a target which will be 100% dense and not cause any distortion due to the bonding process. A 99.99% purity copper target fits this requirement.
It may be worth considering that we coat the copper backing plate with nickel or nickel- vanadium (non-magnetic) to prevent significant alloying of the solder with the backing plate. This would be a phase II modification after we investigate the closure of the gap by the e-beam for vacuum tightness. On work request 00W0152 dated 2/2/2000, Backing Plate 31950 was bonded to a 6N copper target, lot 8V3669-102 using indium solder. The backing plate was modified according to the plan descibed above.
Machined Profile of CVC Bond Experiment
.Measurement
Figure imgf000007_0001
5 8 6 6.2 64 66 7.2
Radial Position (inches)
The black triangle in the figure above shows the desired profile and the pink line shows the actual result. Machining this groove precisely is very difficult.
Machined Profile of CVC Bond Experiment i « Measurement ' F) ^ 5"
Figure imgf000007_0002
O 01/34339
After bonding, the target was scanned for voids.
Figure imgf000008_0001
After scanning, the target was placed in a fixture in the EB welder to allow the target to be spun around its axis so that the Electron Beam could be scanned over the target/BP interface.
Figure imgf000008_0002
Close up images of the edge:
Figure imgf000009_0002
Figure imgf000009_0001
Before Welding After Welding
These images might suggest that there is more impact from the shape of the groove than from the welding process. Keep in mind that this was the first attempt at groove design and the welding process.
The outer surface of the interface was documented by macro-photography.
F) cr /T>
Backing Plate
Bondline
Target Surface
Figure imgf000009_0003

Claims

The process of bonding followed by EB melting of the solder at the target/BP interface is feasible and no adverse impact is observed.
It is possible that the groove positioned at the outer diameter of the target acts as a sink for the solder and might by itself improve the solidification process to reduce the tendency for edge voids to extend into the bond line and subsequently act as virtual leaks.
Claims:
1) Sealing of the edge of a solder bonded target assembly by heating the edge of the solder bond line sufficient to melt the solder locally and rotating the assembly to move the molten bead continuously around the assembly a full 360 degrees.
2) Claim (1) where the continuous bead is accomplished while the entire assembly is held in vacuum.
3) Claim (1, 2) where a solder resevoir is built into the backing plate (or target) by developing a groove by machining or mechanical means. The resevoir must be thicker than the average bond line thickness by 2x to lOx. The groove is built into the part of the assembly which will be on the lower half during the bonding process. Some assemblies may be bonded in an inverted position.
4) Placement of a solder resevoir at the edge of a target assembly created by machining or other means a groove in the backing plate (or target) whereby edge voids will be trapped and not extend into the main solder layer.
5) Claim (1 ,2) where a solder shim is used to feed the excess solder for making the seal.
6) Claim (2,3) where a solder shim is used to feed the excess solder for making the seal.
7) Claim (1,2,3, 4 and 5) where the method of heating is an electron beam.
8) Claim (1,2,3, 4,and 5) where the method of heating is a laser beam.
9) Claim (1 , 2,3,4, and 5) where the method of heating is an inert gas weld with a high melting point electrode (ex. TIG).
10) All claims where the solder is a mixture of tin and a solute near the eutectic composition and the solute comes from the group (Copper, Silver, Aluminum, Magnesium, Gold and Nickel).
11) All claims except (10) where the solder is basically pure tin.
12) All claims except (10 and 11) where the solder is basically pure indium.
13) All claims except (10, 1 1 and 12) where the solder is tin alloyed with antimony, bismuth, indium or gallium or combinations thereof.
14) Claims (1 - 13) where the target and or backing plate are first coated with a protective layer of nickel or nickel alloy (such as Ni7V) before the solder bonding step.
15) Claim (3) where there is more than one concentric groove for the purpose of trapping voids.
PCT/US2000/031037 1999-11-09 2000-11-09 Hermetic sealing of target/backing plate assemblies using electron beam melted indium or tin WO2001034339A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/129,585 US6774339B1 (en) 1999-11-09 2000-11-09 Hermetic sealing of target/backing plate assemblies using electron beam melted indium or tin

Applications Claiming Priority (2)

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US16442399P 1999-11-09 1999-11-09
US60/164,423 1999-11-09

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020202691A1 (en) 2020-03-03 2021-09-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Process for the production of components

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4476151A (en) * 1982-09-07 1984-10-09 Siemens Aktiengesellschaft Method and device for attaching disc-or plate-shaped target bodies to cooling plates for sputtering systems
US5230462A (en) * 1992-07-08 1993-07-27 Materials Research Corporation Method of soldering a sputtering target to a backing member
US5558751A (en) * 1994-04-20 1996-09-24 Leybold Aktiengesellschaft Dual cathode sputter coating apparatus
US5836506A (en) * 1995-04-21 1998-11-17 Sony Corporation Sputter target/backing plate assembly and method of making same
US6073830A (en) * 1995-04-21 2000-06-13 Praxair S.T. Technology, Inc. Sputter target/backing plate assembly and method of making same
US6164519A (en) * 1999-07-08 2000-12-26 Praxair S.T. Technology, Inc. Method of bonding a sputtering target to a backing plate

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4476151A (en) * 1982-09-07 1984-10-09 Siemens Aktiengesellschaft Method and device for attaching disc-or plate-shaped target bodies to cooling plates for sputtering systems
US5230462A (en) * 1992-07-08 1993-07-27 Materials Research Corporation Method of soldering a sputtering target to a backing member
US5558751A (en) * 1994-04-20 1996-09-24 Leybold Aktiengesellschaft Dual cathode sputter coating apparatus
US5836506A (en) * 1995-04-21 1998-11-17 Sony Corporation Sputter target/backing plate assembly and method of making same
US6073830A (en) * 1995-04-21 2000-06-13 Praxair S.T. Technology, Inc. Sputter target/backing plate assembly and method of making same
US6164519A (en) * 1999-07-08 2000-12-26 Praxair S.T. Technology, Inc. Method of bonding a sputtering target to a backing plate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020202691A1 (en) 2020-03-03 2021-09-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Process for the production of components

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