WO2001037321A2 - Semiconductor devices with selectively doped iii-v nitride layers - Google Patents

Semiconductor devices with selectively doped iii-v nitride layers Download PDF

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Publication number
WO2001037321A2
WO2001037321A2 PCT/US2000/031646 US0031646W WO0137321A2 WO 2001037321 A2 WO2001037321 A2 WO 2001037321A2 US 0031646 W US0031646 W US 0031646W WO 0137321 A2 WO0137321 A2 WO 0137321A2
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iii
nitride layer
dopant
combination
group
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PCT/US2000/031646
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French (fr)
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WO2001037321A3 (en
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Werner Goetz
R. Scott Kern
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Lumileds Lighting, U.S., Llc
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Priority to EP00980486.5A priority Critical patent/EP1175694B1/en
Priority to AU17740/01A priority patent/AU1774001A/en
Publication of WO2001037321A2 publication Critical patent/WO2001037321A2/en
Publication of WO2001037321A3 publication Critical patent/WO2001037321A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Definitions

  • the present invention relates generally to semiconductor devices and more particularly to doping III-V nitride light-emitting devices.
  • Si is the donor of choice for doping n-type III-V nitrides due to its favorable properties.
  • Si atoms can be delivered to the growing crystal by flowing silane (SiH4), which is available as a high purity grade gas.
  • Si incorporates efficiently onto the gallium (Ga) sites in the gallium nitride (GAN) lattice where it acts as a donor.
  • Si in GaN (SiGa) is a shallow donor with an activation energy for ionization of -20 meV.
  • the achievable n-type conductivity of an III-V nitride layer is limited due to the fact that the incorporation of Si leads to the formation of cracks for heteroepitaxially-grown III-V nitride materials (particularly on sapphire substrates).
  • the material cracks when the Si doping level exceeds a certain critical concentration.
  • the material starts to crack when the material thickness exceeds a certain critical thickness.
  • Both a high doping concentration and a large material thickness are desirable to reduce the electrical resistivity of a semiconductor material.
  • the doping concentration is limited to ⁇ 5el 8 cm-3.
  • AlInGaN aluminum indium gallium nitride
  • germanium (Ge) and tin (Sn) have been studied as potential donor impurities for III-V nitride materials.
  • Ge doping experiments where it was concluded that doping with Ge is problematic.
  • S. Nakamura, T. Mukai, and M. Senoh, Si- and Ge- Doped GaN Materials Grown with GaN Buffer Layers, Jpn. J. Appl. Phys. 31, 2883, 1992 it is reported that the doping efficiency of Ge is about one order of magnitude lower than for Si.
  • the maximum carrier concentration for Ge-doped GaN is limited to -1x1019 cm-3 because at this doping level the surface of the Ge-doped GaN materials becomes rough and shows pits.
  • X. Zhang, P. Kung, A. Saxler, D. Walker, T.C. Wang, and M. Razeghi Growth of AlxGaI-xN:Ge on sapphire and $i substrates, Appl. Phys. Lett. 67, 1745 (1995), concluded the Ge-doped aluminum gallium nitride (AlGaN) materials have low electron mobilities and that Ge doping is not useful for growing low resistivity materials.
  • AlGaN aluminum gallium nitride
  • the present invention provides a semiconductor device having n-type device layers of III-V nitride having donor dopants such as germanium (Ge), silicon (Si), tin (Sn), and/or oxygen (O) and/or p-type device layers of III-V nitride having acceptor dopants such as magnesium (Mg), beryllium (Be), zinc (Zn), and/or cadmium (Cd), either simultaneously or in a doping superlattice, to engineer strain, improve conductivity, and provide longer wavelength light emission.
  • donor dopants such as germanium (Ge), silicon (Si), tin (Sn), and/or oxygen (O)
  • acceptor dopants such as magnesium (Mg), beryllium (Be), zinc (Zn), and/or cadmium (Cd), either simultaneously or in a doping superlattice, to engineer strain, improve conductivity, and provide longer wavelength light emission.
  • the present invention further provides a semiconductor device using Ge either singularly or in combination, as a co-dopant, with Si and Sn as donor dopants either simultaneously or in a doping superlattice to engineer strain.
  • the Ge doping concentration can range from -1019 cm-3 to -1020 cm-3 at layer thicknesses of 3 ⁇ m and higher without causing cracking problems.
  • the present invention further provides donor impurities which do not cause embritflement of III-V nitride materials.
  • the present invention further provides multi-donor impurity doping for III-V nitride materials to control doping and strain engineering separately.
  • the present invention further provides highly conductive, n-type, Ge-doped, gallium nitride (GAN) materials for utilization in contact layers of III-V nitride devices.
  • GAN gallium nitride
  • the present invention further provides a light-emitting device with donor impurities which promote growth of high indium nitride (INN) containing indium gallium nitride (InGaN) light emission layers for light emission at long wavelengths (symbol 500 nrn).
  • INN indium nitride
  • InGaN indium gallium nitride
  • the present invention further provides a light-emitting device co-doped using a combination of Si, Ge, Sn, oxygen (O), magnesium (Mg), beryllium (Be), zinc (Zn), or cadmium (Cd) to improve the conductivity of III-V nitride materials which stabilize the structural integrity of heteroepitaxially- grown III-V nitride materials on lattice mismatched substrates.
  • the present invention further provides a light-emitting device using different donor dopants for conductive and contact layers.
  • the present invention further provides a light-emitting device where a bottom layer is doped with Ge and a layer on top doped with a different species (e.g. Si, Sn, or a combination of Si, Ge, and Sn).
  • a different species e.g. Si, Sn, or a combination of Si, Ge, and Sn.
  • AlGaN aluminum gallium nitride
  • the present invention further provides a method of controlling strain and, thus, the effects of piezoelectricity in III-V nitride layers. Strain engineering plays a major role in controlling piezoelectric interface charges.
  • FIG. 1 is a light-emitting device incorporating the doped III-V nitride layer of the present invention
  • FIG. 2 is a light-emitting device having the doped superlattice of the present invention.
  • FIG. 3 is a light-emitting device incorporating the strain engineered doping of the present invention.
  • an electronic device such as a light- emitting device 10 which could be a light-emitting diode (LED) or laser diode (LD).
  • the light-emitting device 10 includes an optional substrate 1 1 of sapphire, silicon carbide (SIC), silicon (Si), gallium arsenide (GaAs), or gallium nitride (GAN). It should be understood that the substrate 11 could be discarded in the formation of the light-emitting device 10 after deposition of the various layers which will hereinafter be described.
  • the buffer layer 12 is of a material such as GaN or aluminum nitride (A1N) deposited on sapphire at low temperatures around 500°C.
  • a highly conductive, n-type, light-emitting, III-V nitride layer 13 is deposited on the buffer layer 12.
  • the nitride layer 13 is made of a doped GaN, an indium gallium nitride (InGaN), an aluminum gallium nitride (AlGaN), an aluminum indium nitride (AlInN), or an aluminum gallium indium nitride (AlGalnN).
  • the dopant is germanium (Ge) instead of silicon (Si) or combinations of Si, Ge, tin (Sn), and oxygen (O).
  • the active layer 14 is deposited on the nitride layer 13.
  • the active layer 14 can have a single-quantum well (SQW), multiple-quantum well (MQW), or double-hetero (DH) structure.
  • this layer is GaN, AlGaN, AllnN, InGaN, or AlInGaN.
  • a highly conductive p-type, III-V nitride layer 15 is deposited on the active layer 14.
  • the p-type nitride layer 15 is similar to the n-type nitride layer 13 except with a p- type dopant being used.
  • Final device layers 16, such as cladding and/or contact layers, may be deposited on top of the p-type nitride layer 15.
  • the various layers may be grown using techniques such as metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), gas source MBE (GSPMBE), or hydride vapor phase epitaxy (HVPE). Also, the composition and/or doping of the various layers may change abruptly from one layer to another, may be smoothly graded over a finite thickness, may be graded over the entire thickness of a layer, or may be combined with undoped layers.
  • MOCVD metal organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • GSPMBE gas source MBE
  • HVPE hydride vapor phase epitaxy
  • the composition and/or doping of the various layers may change abruptly from one layer to another, may be smoothly graded over a finite thickness, may be graded over the entire thickness of a layer, or may be combined with undoped layers.
  • the light-emitting device 20 includes an optional substrate 21 of sapphire, silicon carbide (SIC), silicon (Si), gallium arsenide (GaAs), or gallium nitride (GAN).
  • SIC silicon carbide
  • Si silicon
  • GaAs gallium arsenide
  • GAN gallium nitride
  • a low temperature buffer layer 22 is often disposed on the substrate 21.
  • the buffer layer 22 is of a material such as GaN or A1N deposited on sapphire at low temperatures.
  • a highly conductive, n-type III-V nitride layer is deposited on the buffer layer 22.
  • This nitride layer can be GaN with layers doped with different donors, GaN and InGaN layers doped with different donors, InGaN, AlGaN, and AlGalnN doped with different donors, or these layers with undoped layers in between.
  • This layered structure may be termed a "superlattice", although the layers are thicker than those in a conventional superlattice structures since these layers should range from lOA (angstroms) to lO ⁇ m (microns) in thickness. It has been determined that this greater thickness provides greater strain control.
  • the doped layers are designated as nitride layers 23 through 29, which have combinations of Si, Ge, Sn, and O as dopants.
  • the combination of dopants is alternated such that the odd numbered doped nitride layers, designated as nitride layers 23, 25, 27, and 29, use one or more dopant(s) and the other nitride layers, the even numbered doped nitride layers, designated as nitride layers 24, 26, and 28, use another dopant or combination of dopants to achieve a desired state of strain.
  • the nitride layers 23, 25, 27, and 29 are Ge doped and the nitride layers 24, 26, and 28 are Si doped.
  • An active layer 30 is deposited on the nitride layer 29.
  • the active layer 30 can have a SQW, MQW, or DH structure.
  • this layer is an InN containing InGaN or AlInGaN. With a higher InN composition in the InGaN active region, a longer wavelength light emission can be obtained.
  • a highly conductive p-type, III-V nitride layer 31 is deposited on the active layer 30.
  • the p-type nitride layer 31 is the same as the n-type nitride layer 23 except with a p- type dopant being used.
  • Final device layers 32 such as cladding and/or contact layers, may be deposited on top of the p-type nitride layer 31.
  • the final device layers 32 are the other layers required by the light-emitting device 20.
  • the light-emitting device 50 includes a substrate 51 of sapphire, SiC or GaN. Due to difficulties in nucleation of the single crystalline III-V nitride layers on foreign substrates, a low temperature buffer layer 52 is often deposited on the substrate 51.
  • the buffer layer 52 is of a material such as GaN or A1N.
  • a highly conductive, n-type III-V nitride layer is deposited on the buffer layer 52.
  • This nitride layer is made of doped GaN, InGaN, AlGaN, AlInN, or AlGalnN.
  • one dopant species is used in a nitride layer designated as nitride layer 53 and a second in a nitride layer designated as nitride layer 54.
  • the dopants are combinations of Si, Ge, Sn, and O.
  • the nitride layer 53 is doped with Si and the nitride layer 54 with Ge, the nitride layer 54 can be a contact layer.
  • An active layer 55 is deposited on the nitride layers 53 and 54.
  • the active layer 55 can have a SQW or MQW structure. Generally, this layer is an InN containing InGaN or AlInGaN.
  • a highly conductive p-type, III-V nitride layer 56 is deposited on the active layer 55.
  • the p-type nitride layer 56 is similar to the n-type nitride layers 53 and 54 except with a p-type dopant being used.
  • Final device layers 57 such as cladding and/or contact layers, may be deposited on top of the p-type nitride layer 56.
  • the final device layers 57 are the other layers required by the light-emitting device 50.
  • Si has been the donor of choice for doping n-type, III-V nitride layers due to its favorable properties.
  • Si doping the achievable n-type conductivity of an III-V nitride layer is limited due to the fact that the incorporation of Si leads to the formation of cracks in heteroepitaxially-grown GaN due to differences in lattice constants and in coefficients of thermal expansion with the substrate. It is possible that the cracking problem is a consequence of the small ionic radius of Si donors as compared to Ga host atoms. Si has an ionic radius of 0.413. while Ga has an ionic radius of 0.62A.
  • Si doping leads to more compressive strain in the c-axis direction for high Si doping concentrations.
  • the basal plane of GaN is put into more tensile strain.
  • Two potential donor impurities, Ge and Sn for III-V nitride materials possess larger ionic radii than Si and are much closer to the ionic radius of Ga.
  • Ge has an ionic radius of 0.53 A and Sn has an ionic radius of 0.71 A.
  • both Ge and Sn doping sources are readily available as gases, germanium hydride (Gert4) and tin hydride (SnH4), for use with conventional MOCVD processes.
  • germanium hydride (Gert4) and tin hydride (SnH4) for use with conventional MOCVD processes.
  • the donor ionization energies of Ge in GaN (GeGa) and Sn in GaN (SnGa) are expected to be similar to that of silicon in GaN (SiGa). This makes these ions ideal dopants.
  • the nitride layer 13 can be doped with Si, Ge, Sn, or O alone or together in combination. In contrast to Si-doped GaN, heavily Ge-doped GaN will not crack when grown thicker than -1 ⁇ m. Further, the nitride layer 13 with Ge doping levels in the range from -1019 cm-3 to -1020 cm-3 typically form ohmic contacts with various metals, and thus make good contact layers. Ge doping at such concentration has been deemed to be unobtainable in the literature, as indicated by Nakamura et al., supra.
  • the nitride layer 13 may be co-doped using a combination of the following donors: Si, Ge, Sn, and O.
  • the different donor species are introduced simultaneously to stabilize the structural integrity of heteroepitaxially-grown III-V nitride on lattice mismatched substrates. For example, tensile strain can be reduced by using combinations of Si and Ge, Si and Sn, and Ge and Sn.
  • the use of O is highly desirable as it will occupy the N-lattice site. Hence, there is no site competition with Si, Ge, or Sn which occupies the Ga lattice site, and higher doping levels may be achieved. With higher doping levels, it is possible to achieve much higher conductivity.
  • co-dopants of Si/Ge, Si/Sn, and Ge/Sn it is possible to stabilize the lattice and avoid cracking.
  • the dopants and their percentages are chosen differently for the growth of GaN, InGaN, and AlGaN to adjust the strain state that is desirable for overgrowth of GaN, AlGaN, AlInN, InGaN, or AlInGaN.
  • the light-emitting device 20 is a solution to the problem reported by Nakamura, et al., supra, that the doping efficiency for Ge is an order of magnitude lower than for Si.
  • Si layers could be sandwiched between Ge-doped layers so that the total thickness of the Si-doped layers does not exceed the critical thickness for cracking at the given doping level.
  • the Si- doped layers 24, 26, and 28 would be relatively thin.
  • the Ge-doped layers 23, 25, 27, and 29 can be doped to the same concentration, but can be made thick enough to provide the desired high conductivity..
  • the different dopants in the nitride layer 13 can be at a single dopant concentration or one which gradually changes from the buffer layer 12 to the nitride layer 13. It is also practical for the nitride layer 13 to start with one dopant at the buffer layer 12 and gradually decrease the concentration of the one dopant and gradually increase the concentration of the second dopant.
  • InGaN or AlGaN active layer 14 will be possible by choosing a specific combination of dopants and grading their relative concentration.
  • the in-plane lattice parameters for InGaN and AlGaN are larger and smaller, respectively, than the lattice parameters for GaN.
  • co-doping of a GaN nitride layer 13 with two different donor species and increasing the concentration of the donor species that increases the in-plane lattice constant towards the interface with an InGaN active layer 14 will adjust the lattice for overgrowth of InGaN.
  • co-doping with Si and Ge, and increasing Si concentration towards the InGaN interface will adjust the lattice for overgrowth of InGaN.
  • choosing an alternative pair of donor dopants for a GaN nitride layer 13 and increasing the concentration of the donor that decreases the in-plane lattice constant towards the interface with an AlGaN active layer 14 will be advantageous for overgrowth of thick AlGaN layers as required for growth of mirror stacks in surface emitting lasers, for example, co-doping with Si and Ge, and increasing Ge concentration towards the AlGaN interface.
  • the nitride layer 53 of GaN could be doped with Ge. This would allow for high doping and the layer could also be thick.
  • a heavily doped nitride layer 54 is grown using a different donor species such as Si which increases the lattice parameter in the c-plane and therefore will allow InGaN with high InN compositions to grow. With a higher InN composition in the InGaN active region, a longer wavelength light emission can be obtained.
  • the nitride layer 53 would contain GaN:Si and the nitride layer 54 of Ge-doped GaN would be grown on top with a Ge doping concentration of -1020 cm-3.
  • This high Ge-doped nitride layer 54 would be a contact layer which is thick enough so that it can be easily reached by etching even if the etch depth varies.
  • the active layer 55 is then grown on top of this contact layer.

Abstract

A semiconductor device is provided having n-type device layers of III-V nitride having donor dopants such as germanium (Ge), silicon (Si), tin (Sn), and/or oxygen (0) and/or p-type device layers of III-V nitride having acceptor dopants such as magnesium (Mg), beryllium (Be), zinc (Zn), and/or cadmium (Cd), either simultaneously or in a doping superlattice, to engineer strain, improve conductivity, and provide longer wavelength light emission.

Description

SEMICONDUCTOR DEVICES WITH SELECTIVELY DOPED III-V NITRIDE LAYERS
TECHNICAL FIELD
The present invention relates generally to semiconductor devices and more particularly to doping III-V nitride light-emitting devices.
BACKGROUND ART
Silicon (Si) is the donor of choice for doping n-type III-V nitrides due to its favorable properties. In particular, during metal-organic chemical vapor deposition (MOCVD), Si atoms can be delivered to the growing crystal by flowing silane (SiH4), which is available as a high purity grade gas. In addition, Si incorporates efficiently onto the gallium (Ga) sites in the gallium nitride (GAN) lattice where it acts as a donor. Further, Si in GaN (SiGa) is a shallow donor with an activation energy for ionization of -20 meV.
However, with Si doping the achievable n-type conductivity of an III-V nitride layer is limited due to the fact that the incorporation of Si leads to the formation of cracks for heteroepitaxially-grown III-V nitride materials (particularly on sapphire substrates). For a given material thickness, the material cracks when the Si doping level exceeds a certain critical concentration. Likewise, for a given doping concentration, the material starts to crack when the material thickness exceeds a certain critical thickness.
Both a high doping concentration and a large material thickness are desirable to reduce the electrical resistivity of a semiconductor material. For example, for an .-.3.5 μm thick GaN material, as typically employed in a light-emitting diode (LED) structure, the doping concentration is limited to ~5el 8 cm-3. As a consequence of the a foregoing, the series resistance of an aluminum indium gallium nitride (AlInGaN) LED is dominated by the resistance of the Si-doped GaN layer. This is the case for growth on non- conductive substrates such as sapphire where the current passes laterally through the Si- doped GaN layer as well as growth on conductive substrates such as silicon carbide (SIC) and hydride vapor phase epitaxy (HVPE) grown GaN where the current passes vertically through the thick Si-doped GaN layer. Higher doping concentrations and/or thicker n- type GaN materials (for growth on non-conductive substrates) would be advantageous for the fabrication of III-V nitride based LEDs with low series resistance.
Further, in addition to Si, germanium (Ge) and tin (Sn) have been studied as potential donor impurities for III-V nitride materials. However, there are reports on Ge doping experiments where it was concluded that doping with Ge is problematic. In the S. Nakamura, T. Mukai, and M. Senoh, Si- and Ge- Doped GaN Materials Grown with GaN Buffer Layers, Jpn. J. Appl. Phys. 31, 2883, 1992, it is reported that the doping efficiency of Ge is about one order of magnitude lower than for Si. Furthermore, they concluded that the maximum carrier concentration for Ge-doped GaN is limited to -1x1019 cm-3 because at this doping level the surface of the Ge-doped GaN materials becomes rough and shows pits. X. Zhang, P. Kung, A. Saxler, D. Walker, T.C. Wang, and M. Razeghi, Growth of AlxGaI-xN:Ge on sapphire and $i substrates, Appl. Phys. Lett. 67, 1745 (1995), concluded the Ge-doped aluminum gallium nitride (AlGaN) materials have low electron mobilities and that Ge doping is not useful for growing low resistivity materials.
For a long time, a solution has been sought to the problem of material cracking which occurs with Si doping levels exceeding certain concentrations at certain critical thicknesses. Further, Si doping is known to cause the III-V nitride materials to embrittle, which further enhances the tendency of the material to crack, and a solution to this problem has long been sought. It has also been shown that there is a large piezoelectric effect due to the lattice mismatch between GaN and its alloys. For example, an indium gallium nitride (InGaN) layer grown between two GaN layers will have a high piezoelectric sheet charge associated with each interface.
DISCLOSURE OF THE INVENTION
The present invention provides a semiconductor device having n-type device layers of III-V nitride having donor dopants such as germanium (Ge), silicon (Si), tin (Sn), and/or oxygen (O) and/or p-type device layers of III-V nitride having acceptor dopants such as magnesium (Mg), beryllium (Be), zinc (Zn), and/or cadmium (Cd), either simultaneously or in a doping superlattice, to engineer strain, improve conductivity, and provide longer wavelength light emission.
The present invention further provides a semiconductor device using Ge either singularly or in combination, as a co-dopant, with Si and Sn as donor dopants either simultaneously or in a doping superlattice to engineer strain. Unlike Si, the Ge doping concentration can range from -1019 cm-3 to -1020 cm-3 at layer thicknesses of 3 μm and higher without causing cracking problems.
The present invention further provides donor impurities which do not cause embritflement of III-V nitride materials.
The present invention further provides multi-donor impurity doping for III-V nitride materials to control doping and strain engineering separately.
The present invention further provides highly conductive, n-type, Ge-doped, gallium nitride (GAN) materials for utilization in contact layers of III-V nitride devices.
The present invention further provides a light-emitting device with donor impurities which promote growth of high indium nitride (INN) containing indium gallium nitride (InGaN) light emission layers for light emission at long wavelengths (symbol 500 nrn). This allows the InGaN active region to contain a higher InN composition with higher quality and thus a higher efficiency, longer wavelength light emission or the growth of an Al GaN layer on top of GaN without cracking.
The present invention further provides a light-emitting device co-doped using a combination of Si, Ge, Sn, oxygen (O), magnesium (Mg), beryllium (Be), zinc (Zn), or cadmium (Cd) to improve the conductivity of III-V nitride materials which stabilize the structural integrity of heteroepitaxially- grown III-V nitride materials on lattice mismatched substrates.
The present invention further provides a light-emitting device using different donor dopants for conductive and contact layers.
The present invention further provides a light-emitting device where a bottom layer is doped with Ge and a layer on top doped with a different species (e.g. Si, Sn, or a combination of Si, Ge, and Sn). This permits adjustment of the in-plane lattice constant of GaN closer to the in-plane lattice constant of a ternary compound (e.g., InGaN or aluminum gallium nitride (AlGaN)). This allows the InGaN active region to contain a higher InN composition with higher quality and thus a higher efficiency, longer wavelength light emission or the growth of an AlGaN layer on top of GaN without cracking. The present invention further provides a method of controlling strain and, thus, the effects of piezoelectricity in III-V nitride layers. Strain engineering plays a major role in controlling piezoelectric interface charges.
The above and additional advantages of the present invention will become apparent to those skilled in the art from a reading of the following detailed description when taken in conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a light-emitting device incorporating the doped III-V nitride layer of the present invention; FIG. 2 is a light-emitting device having the doped superlattice of the present invention; and
FIG. 3 is a light-emitting device incorporating the strain engineered doping of the present invention.
BEST MODE FOR CARRYING OUT THE INVENTION
Referring now to FIG. 1, therein is shown an electronic device such as a light- emitting device 10 which could be a light-emitting diode (LED) or laser diode (LD). The light-emitting device 10 includes an optional substrate 1 1 of sapphire, silicon carbide (SIC), silicon (Si), gallium arsenide (GaAs), or gallium nitride (GAN). It should be understood that the substrate 11 could be discarded in the formation of the light-emitting device 10 after deposition of the various layers which will hereinafter be described.
Due to difficulties in nucleation of the single crystalline III-V nitride layers on foreign substrates, a low temperature buffer layer 12 is often disposed on the substrate 11. The buffer layer 12 is of a material such as GaN or aluminum nitride (A1N) deposited on sapphire at low temperatures around 500°C.
A highly conductive, n-type, light-emitting, III-V nitride layer 13 is deposited on the buffer layer 12. The nitride layer 13 is made of a doped GaN, an indium gallium nitride (InGaN), an aluminum gallium nitride (AlGaN), an aluminum indium nitride (AlInN), or an aluminum gallium indium nitride (AlGalnN). These materials enable low driving voltages for the light-emitting devicelO due to reduced resistance in the n-layer, excellent electron injection due to high electron concentration near the p-n junction, and the formation of electrodes to the layers with the ohmic electrical characteristics. In the preferred embodiment, the dopant is germanium (Ge) instead of silicon (Si) or combinations of Si, Ge, tin (Sn), and oxygen (O).
An active layer 14 is deposited on the nitride layer 13. The active layer 14 can have a single-quantum well (SQW), multiple-quantum well (MQW), or double-hetero (DH) structure. Generally, this layer is GaN, AlGaN, AllnN, InGaN, or AlInGaN.
A highly conductive p-type, III-V nitride layer 15 is deposited on the active layer 14. The p-type nitride layer 15 is similar to the n-type nitride layer 13 except with a p- type dopant being used.
Final device layers 16, such as cladding and/or contact layers, may be deposited on top of the p-type nitride layer 15.
The various layers may be grown using techniques such as metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), gas source MBE (GSPMBE), or hydride vapor phase epitaxy (HVPE). Also, the composition and/or doping of the various layers may change abruptly from one layer to another, may be smoothly graded over a finite thickness, may be graded over the entire thickness of a layer, or may be combined with undoped layers.
Referring now to FIG. 2, therein is shown an electronic device, such as a light- emitting device 20. The light-emitting device 20 includes an optional substrate 21 of sapphire, silicon carbide (SIC), silicon (Si), gallium arsenide (GaAs), or gallium nitride (GAN). Again, due to difficulties in nucleation of the single crystalline III-V nitride layers on foreign substrates, a low temperature buffer layer 22 is often disposed on the substrate 21. The buffer layer 22 is of a material such as GaN or A1N deposited on sapphire at low temperatures.
A highly conductive, n-type III-V nitride layer is deposited on the buffer layer 22.
This nitride layer can be GaN with layers doped with different donors, GaN and InGaN layers doped with different donors, InGaN, AlGaN, and AlGalnN doped with different donors, or these layers with undoped layers in between. This layered structure may be termed a "superlattice", although the layers are thicker than those in a conventional superlattice structures since these layers should range from lOA (angstroms) to lOμm (microns) in thickness. It has been determined that this greater thickness provides greater strain control.
The doped layers are designated as nitride layers 23 through 29, which have combinations of Si, Ge, Sn, and O as dopants. The combination of dopants is alternated such that the odd numbered doped nitride layers, designated as nitride layers 23, 25, 27, and 29, use one or more dopant(s) and the other nitride layers, the even numbered doped nitride layers, designated as nitride layers 24, 26, and 28, use another dopant or combination of dopants to achieve a desired state of strain. For example, the nitride layers 23, 25, 27, and 29 are Ge doped and the nitride layers 24, 26, and 28 are Si doped. An active layer 30 is deposited on the nitride layer 29. The active layer 30 can have a SQW, MQW, or DH structure. Generally, this layer is an InN containing InGaN or AlInGaN. With a higher InN composition in the InGaN active region, a longer wavelength light emission can be obtained.
A highly conductive p-type, III-V nitride layer 31 is deposited on the active layer 30. The p-type nitride layer 31 is the same as the n-type nitride layer 23 except with a p- type dopant being used.
Final device layers 32, such as cladding and/or contact layers, may be deposited on top of the p-type nitride layer 31. The final device layers 32 are the other layers required by the light-emitting device 20.
Referring now to FIG. 3, therein is shown another electronic device, such as a light-emitting device 50. The light-emitting device 50 includes a substrate 51 of sapphire, SiC or GaN. Due to difficulties in nucleation of the single crystalline III-V nitride layers on foreign substrates, a low temperature buffer layer 52 is often deposited on the substrate 51. The buffer layer 52 is of a material such as GaN or A1N.
A highly conductive, n-type III-V nitride layer is deposited on the buffer layer 52.
This nitride layer is made of doped GaN, InGaN, AlGaN, AlInN, or AlGalnN. Here, one dopant species is used in a nitride layer designated as nitride layer 53 and a second in a nitride layer designated as nitride layer 54. In the preferred embodiment, the dopants are combinations of Si, Ge, Sn, and O. Where the nitride layer 53 is doped with Si and the nitride layer 54 with Ge, the nitride layer 54 can be a contact layer. An active layer 55 is deposited on the nitride layers 53 and 54. The active layer 55 can have a SQW or MQW structure. Generally, this layer is an InN containing InGaN or AlInGaN.
A highly conductive p-type, III-V nitride layer 56 is deposited on the active layer 55. The p-type nitride layer 56 is similar to the n-type nitride layers 53 and 54 except with a p-type dopant being used.
Final device layers 57, such as cladding and/or contact layers, may be deposited on top of the p-type nitride layer 56. The final device layers 57 are the other layers required by the light-emitting device 50.
In the past, Si has been the donor of choice for doping n-type, III-V nitride layers due to its favorable properties. However, with Si doping the achievable n-type conductivity of an III-V nitride layer is limited due to the fact that the incorporation of Si leads to the formation of cracks in heteroepitaxially-grown GaN due to differences in lattice constants and in coefficients of thermal expansion with the substrate. It is possible that the cracking problem is a consequence of the small ionic radius of Si donors as compared to Ga host atoms. Si has an ionic radius of 0.413. while Ga has an ionic radius of 0.62A. For example, it has been determined that for growth on c-plane sapphire, Si doping leads to more compressive strain in the c-axis direction for high Si doping concentrations. As a consequence, the basal plane of GaN is put into more tensile strain. Two potential donor impurities, Ge and Sn for III-V nitride materials possess larger ionic radii than Si and are much closer to the ionic radius of Ga. Ge has an ionic radius of 0.53 A and Sn has an ionic radius of 0.71 A.
Further, like Si, both Ge and Sn doping sources are readily available as gases, germanium hydride (Gert4) and tin hydride (SnH4), for use with conventional MOCVD processes. And, the donor ionization energies of Ge in GaN (GeGa) and Sn in GaN (SnGa) are expected to be similar to that of silicon in GaN (SiGa). This makes these ions ideal dopants.
With reference to the structure shown in FIG. 1, the nitride layer 13 can be doped with Si, Ge, Sn, or O alone or together in combination. In contrast to Si-doped GaN, heavily Ge-doped GaN will not crack when grown thicker than -1 μm. Further, the nitride layer 13 with Ge doping levels in the range from -1019 cm-3 to -1020 cm-3 typically form ohmic contacts with various metals, and thus make good contact layers. Ge doping at such concentration has been deemed to be unobtainable in the literature, as indicated by Nakamura et al., supra.
Also with reference to FIG. 1, the nitride layer 13 may be co-doped using a combination of the following donors: Si, Ge, Sn, and O. The different donor species are introduced simultaneously to stabilize the structural integrity of heteroepitaxially-grown III-V nitride on lattice mismatched substrates. For example, tensile strain can be reduced by using combinations of Si and Ge, Si and Sn, and Ge and Sn. In addition, the use of O is highly desirable as it will occupy the N-lattice site. Hence, there is no site competition with Si, Ge, or Sn which occupies the Ga lattice site, and higher doping levels may be achieved. With higher doping levels, it is possible to achieve much higher conductivity. Using co-dopants of Si/Ge, Si/Sn, and Ge/Sn, it is possible to stabilize the lattice and avoid cracking. The dopants and their percentages are chosen differently for the growth of GaN, InGaN, and AlGaN to adjust the strain state that is desirable for overgrowth of GaN, AlGaN, AlInN, InGaN, or AlInGaN.
With reference to FIG. 2, the light-emitting device 20 is a solution to the problem reported by Nakamura, et al., supra, that the doping efficiency for Ge is an order of magnitude lower than for Si. To circumvent this problem, Si layers could be sandwiched between Ge-doped layers so that the total thickness of the Si-doped layers does not exceed the critical thickness for cracking at the given doping level. Thus, the Si- doped layers 24, 26, and 28 would be relatively thin. The Ge-doped layers 23, 25, 27, and 29 can be doped to the same concentration, but can be made thick enough to provide the desired high conductivity..
Referring back to FIG. 1, the different dopants in the nitride layer 13 can be at a single dopant concentration or one which gradually changes from the buffer layer 12 to the nitride layer 13. It is also practical for the nitride layer 13 to start with one dopant at the buffer layer 12 and gradually decrease the concentration of the one dopant and gradually increase the concentration of the second dopant.
For example, a gradual adjustment of the strain for subsequent overgrowth of an
InGaN or AlGaN active layer 14 will be possible by choosing a specific combination of dopants and grading their relative concentration. The in-plane lattice parameters for InGaN and AlGaN are larger and smaller, respectively, than the lattice parameters for GaN.
As a consequence, co-doping of a GaN nitride layer 13 with two different donor species and increasing the concentration of the donor species that increases the in-plane lattice constant towards the interface with an InGaN active layer 14 will adjust the lattice for overgrowth of InGaN. For example, co-doping with Si and Ge, and increasing Si concentration towards the InGaN interface.
On the other hand, choosing an alternative pair of donor dopants for a GaN nitride layer 13 and increasing the concentration of the donor that decreases the in-plane lattice constant towards the interface with an AlGaN active layer 14 will be advantageous for overgrowth of thick AlGaN layers as required for growth of mirror stacks in surface emitting lasers, for example, co-doping with Si and Ge, and increasing Ge concentration towards the AlGaN interface.
With reference now to FIG. 3, similar results to those just described above can be achieved by the introduction of a separately doped layer. For example, the nitride layer 53 of GaN could be doped with Ge. This would allow for high doping and the layer could also be thick. On top of the Ge-doped GaN layer, a heavily doped nitride layer 54 is grown using a different donor species such as Si which increases the lattice parameter in the c-plane and therefore will allow InGaN with high InN compositions to grow. With a higher InN composition in the InGaN active region, a longer wavelength light emission can be obtained.
Also, higher tensile strain in the basal plane will reduce the piezoelectric sheet charge at the InGaN interface.
Alternately, the nitride layer 53 would contain GaN:Si and the nitride layer 54 of Ge-doped GaN would be grown on top with a Ge doping concentration of -1020 cm-3. This high Ge-doped nitride layer 54 would be a contact layer which is thick enough so that it can be easily reached by etching even if the etch depth varies. The active layer 55 is then grown on top of this contact layer.
While the invention has been described in conjunction with a specific best mode, it is to be understood that many alternatives, modifications, and variations will be apparent to those skilled in the art in light of the aforegoing description. For example, the structure is further applicable to highly doped p-layers in semiconductor devices where the dopants would be Mg, Be, Zn, or Cd. Accordingly, it is intended to embrace all such alternatives, modifications, and variations which fall within the spirit and scope of the included claims. All matters set forth herein or shown in the accompanying drawings are to be interpreted in an illustrative and non-limiting sense.

Claims

THE INVENTION CLAIMED IS:
1. A device comprising: a substrate; an III-V nitride layer positioned over said substrate; an active layer positioned over said III-V nitride layer; a second III-V nitride layer positioned over said active layer; and said III-V nitride layer doped with an element dopant from a group consisting of germanium, tin, oxygen, magnesium, beryllium, zinc, cadmium, and a combination thereof whereby stress is controlled and embrittlement of said III-V nitride layer is minimized.
2. A device as claimed in claim 1 wherein: said III-V nitride layer contains a second dopant selected from a group consisting of silicon, germanium, tin, oxygen, magnesium, beryllium, zinc, cadmium, and a combination thereof.
3. The device as claimed in claim 1 wherein: said III-V nitride layer contains a second dopant selected from a group consisting of silicon, germanium, tin, oxygen, magnesium, beryllium, zinc, cadmium, and a combination thereof, said second dopant changes concentration towards said active layer.
4. The device as claimed in claim 1 wherein: said III-V nitride layer contains a second dopant selected from a group consisting of silicon, germanium, tin, oxygen, magnesium, beryllium, zinc, cadmium, and a combination thereof, said second dopant increases concentration towards said active layer; and said dopant increases concentration away from said active layer.
5. The device as claimed in claim 1 wherein: a portion of said III-V nitride layer is doped with a dopant from a group consisting of silicon, germanium, tin, oxygen, and a combination thereof; and a second portion of said III-V nitride layer is doped with a dopant different from the dopant used in said first portion and selected from a group consisting of silicon, germanium, tin, oxygen, magnesium, beryllium, zinc, cadmium, and a combination thereof.
6. The device as claimed in claim I wherein: a plurality of portions of said III-V nitride layer are doped with a dopant from a group consisting of silicon, germanium, tin, oxygen, magnesium, beryllium, zinc, cadmium, and a combination thereof; a plurality of second portions of said III-V nitride layer are doped with a dopant different from the dopant used in said plurality of portions and selected from a group consisting of silicon, germanium, tin, oxygen, magnesium, beryllium, zinc, cadmium, and a combination thereof; and said plurality of portions and said plurality of second portions are alternated whereby a superlattice structure is formed.
7. The device as claimed in claim 1 including: an undoped layer in said III-V nitride layer.
8. The device as claimed in claim 1 wherein: said III-V nitride layer includes a heavily doped portion using a different dopant than said dopant to increase the lattice parameter adjacent to said active layer.
9. The device as claimed in claim 1 wherein: said III-V nitride layer is heavily doped to render it highly conductive to be a contact layer for the device.
10. The device as claimed in claim 1 wherein: said III-V nitride layer contains a plurality of dopants to selectively vary the composition and properties of said III-V nitride layer from said structure to said active layer.
11. The device as claimed in claim 1 wherein: said III-V nitride layer and the second III-V nitride layer range from 10A to 10pm in thickness.
12. A light-emitting device comprising: a substrate containing an element from a group consisting of aluminum, carbon, gallium, indium, nitrogen, oxygen, silicon, and a combination thereof; a III-V nitride layer positioned over said substrate and containing an element selected from a group consisting of aluminum, gallium, indium, nitrogen, and a combination thereof; an active layer positioned over said III-V nitride layer and containing an element selected from a group consisting of aluminum, gallium, indium, nitrogen, and a combination thereof; a second III-V nitride layer positioned over said active layer and containing an element selected from a group consisting of aluminum, gallium, indium, nitrogen, and a combination thereof; and said III-V nitride layer doped with an element dopant from a group consisting of germanium, tin, oxygen, magnesium, beryllium, zinc, cadmium, and a combination thereof whereby compression or tension cracking and embrittlement of said III-V nitride layer is minimized.
13. The light-emitting device as claimed in claim 12 wherein: said III-V nitride layer contains a second dopant selected from a group consisting of silicon, germanium, tin, oxygen, magnesium, beryllium, zinc, cadmium, and a combination thereof.
14. The light-emitting device as claimed in claim 12 wherein: said III-V nitride layer contains a second dopant selected from a group consisting of silicon, germanium, tin, oxygen, magnesium, beryllium, zinc, cadmium, and a combination thereof, said second dopant changes concentration towards said active layer whereby the lattice constant of said III-V nitride layer changes towards the lattice constant of said active layer.
15. The light-emitting device as claimed in claim 12 wherein: said III-V nitride layer contains a second dopant selected from a group consisting of silicon, germanium, tin, oxygen, magnesium, beryllium, zinc, cadmium, and a combination thereof, said second dopant increases concentration towards said active layer; and said dopant increases concentration away from said active layer whereby high conductivity and long wavelength emissions from the active layer are achieved.
16. The light-emitting device as claimed in claim 12 wherein: a first portion of said III-V nitride layer is doped with a dopant from a group consisting of silicon, germanium, tin, oxygen, magnesium, beryllium, zinc, cadmium, and a combination thereof; and a second portion of said III-V nitride layer is thicker than said first portion and is doped with a dopant different from the dopant used in said first portion and selected from a group consisting of silicon, germanium, tin, oxygen, magnesium, beryllium, zinc, cadmium, and a combination thereof.
17. The light-emitting device as claimed in claim 12 wherein: a plurality of first portions of said III-V nitride layer are doped with a dopant from a group consisting of silicon, germanium, tin, oxygen, magnesium, beryllium, zinc, cadmium, and a combination thereof; a plurality of second portions of said III-V nitride layer are doped with a dopant different from the dopant used in said plurality of first portions and selected from a group consisting of silicon, germanium, tin, oxygen, magnesium, beryllium, zinc, cadmium, and a combination thereof; and each of said plurality of first portions and each of said plurality of second portions are alternated whereby the conductivity and the stress in the device are controlled.
18. The light-emitting device as claimed in claim 12 including: a plurality of undoped layers in said III-V nitride layer and in said second III-V nitride layer.
19. The light-emitting device as claimed in claim 12 wherein: said III-V nitride layer includes a heavily doped portion using a different dopant than said dopant to increase the lattice parameter adjacent to said active layer.
20. The light-emitting device as claimed in claim 12 wherein: said III-V nitride layer has at least a portion heavily doped to render it a contact layer.
21. The light-emitting device as claimed in claim 12 wherein: said III-V nitride layer contains a plurality of dopants to selectively vary the composition and properties of said III-V nitride layer from said substrate to said active layer.
22. The light-emitting device as claimed in claim 12 wherein: said III-V nitride layer and the second III-V nitride layer range from 1 OA to 1 Oμm in thickness.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012035135A1 (en) * 2010-09-19 2012-03-22 Osram Opto Semiconductors Gmbh Semiconductor chip and method for producing the same

Families Citing this family (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001160627A (en) * 1999-11-30 2001-06-12 Toyoda Gosei Co Ltd Group iii nitride compound semiconductor light emitting element
DE50112334D1 (en) * 2000-06-02 2007-05-24 Microgan Gmbh HETEROSTRUCTURE WITH BACK DONATE ORDERING
US6586762B2 (en) 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
JP2002057158A (en) * 2000-08-09 2002-02-22 Sony Corp Insulating nitride layer and its formation method, and semiconductor device and its manufacturing method
JP2002151734A (en) * 2000-09-04 2002-05-24 Sharp Corp Light emitting diode
US6673149B1 (en) * 2000-09-06 2004-01-06 Matsushita Electric Industrial Co., Ltd Production of low defect, crack-free epitaxial films on a thermally and/or lattice mismatched substrate
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
JP3639789B2 (en) * 2001-01-31 2005-04-20 シャープ株式会社 Nitride semiconductor light emitting device
US6956250B2 (en) * 2001-02-23 2005-10-18 Nitronex Corporation Gallium nitride materials including thermally conductive regions
KR100902109B1 (en) * 2001-04-12 2009-06-09 니치아 카가쿠 고교 가부시키가이샤 Gallium nitride compound semiconductor element
DE60225322T2 (en) * 2001-11-05 2009-02-26 Nichia Corp., Anan SEMICONDUCTOR ELEMENT
JP3973523B2 (en) * 2002-09-20 2007-09-12 三洋電機株式会社 Nitride semiconductor laser device
TW561637B (en) * 2002-10-16 2003-11-11 Epistar Corp LED having contact layer with dual dopant state
US7026249B2 (en) * 2003-05-30 2006-04-11 International Business Machines Corporation SiGe lattice engineering using a combination of oxidation, thinning and epitaxial regrowth
US7135720B2 (en) * 2003-08-05 2006-11-14 Nitronex Corporation Gallium nitride material transistors and methods associated with the same
US20050145851A1 (en) * 2003-12-17 2005-07-07 Nitronex Corporation Gallium nitride material structures including isolation regions and methods
US7071498B2 (en) * 2003-12-17 2006-07-04 Nitronex Corporation Gallium nitride material devices including an electrode-defining layer and methods of forming the same
JP2005340789A (en) * 2004-04-28 2005-12-08 Showa Denko Kk Group iii nitride semiconductor light-emitting element
JP2006013473A (en) * 2004-05-24 2006-01-12 Showa Denko Kk Group iii nitride semiconductor light emitting element
US7361946B2 (en) * 2004-06-28 2008-04-22 Nitronex Corporation Semiconductor device-based sensors
US7339205B2 (en) * 2004-06-28 2008-03-04 Nitronex Corporation Gallium nitride materials and methods associated with the same
US7687827B2 (en) * 2004-07-07 2010-03-30 Nitronex Corporation III-nitride materials including low dislocation densities and methods associated with the same
JP4316454B2 (en) * 2004-09-10 2009-08-19 株式会社東芝 Semiconductor substrate, semiconductor element, semiconductor element manufacturing method, and semiconductor substrate manufacturing method
EP1831919A2 (en) * 2004-10-28 2007-09-12 Nitronex Corporation Gallium nitride/silicon based monolithic microwave integrated circuit
US7247889B2 (en) 2004-12-03 2007-07-24 Nitronex Corporation III-nitride material structures including silicon substrates
WO2006090841A1 (en) * 2005-02-25 2006-08-31 Dowa Electronics Materials Co., Ltd. AlGaAs LIGHT EMITTING DIODE HAVING DOUBLE HETERO JUNCTION AND METHOD FOR MANUFACTURING SAME
US7365374B2 (en) * 2005-05-03 2008-04-29 Nitronex Corporation Gallium nitride material structures including substrates and methods associated with the same
JP2007081180A (en) * 2005-09-15 2007-03-29 Matsushita Electric Ind Co Ltd Semiconductor light-emitting element
KR20080072833A (en) * 2005-10-04 2008-08-07 니트로넥스 코오포레이션 Gallium nitride material transistors and methods for wideband applications
US7566913B2 (en) 2005-12-02 2009-07-28 Nitronex Corporation Gallium nitride material devices including conductive regions and methods associated with the same
WO2007064689A1 (en) * 2005-12-02 2007-06-07 Nitronex Corporation Gallium nitride material devices and associated methods
US8764903B2 (en) 2009-05-05 2014-07-01 Sixpoint Materials, Inc. Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
TW200804635A (en) * 2006-05-08 2008-01-16 Univ California Method and meterials for growing III-nitride semiconductor compounds containing aluminum
PL1883119T3 (en) * 2006-07-27 2016-04-29 Osram Opto Semiconductors Gmbh Semiconductor layer structure with overlay grid
EP1883141B1 (en) * 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD or LED with superlattice cladding layer
EP1883140B1 (en) * 2006-07-27 2013-02-27 OSRAM Opto Semiconductors GmbH LD or LED with superlattice clad layer and graded doping
DE102006046227A1 (en) * 2006-07-27 2008-01-31 Osram Opto Semiconductors Gmbh Semiconductor layer structure has super lattice with alternative stacked layers of connecting semiconductors of one composition and another composition, where stacked layers have doping agents in specific concentration
WO2008021451A2 (en) * 2006-08-14 2008-02-21 Aktiv-Dry Llc Human-powered dry powder inhaler and dry powder inhaler compositions
US20080217652A1 (en) * 2006-10-24 2008-09-11 Keh-Yung Cheng Growth of AsSb-Based Semiconductor Structures on InP Substrates Using Sb-Containing Buffer Layers
WO2008061085A1 (en) * 2006-11-10 2008-05-22 University Of South Carolina Selectively doped semi-conductors and methods of making the same
US7825432B2 (en) 2007-03-09 2010-11-02 Cree, Inc. Nitride semiconductor structures with interlayer structures
US8362503B2 (en) 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
US7745848B1 (en) 2007-08-15 2010-06-29 Nitronex Corporation Gallium nitride material devices and thermal designs thereof
US8026581B2 (en) * 2008-02-05 2011-09-27 International Rectifier Corporation Gallium nitride material devices including diamond regions and methods associated with the same
EP2245218B1 (en) * 2008-02-25 2019-06-19 SixPoint Materials, Inc. Method for producing group iii nitride wafers and group iii nitride wafers
US8343824B2 (en) * 2008-04-29 2013-01-01 International Rectifier Corporation Gallium nitride material processing and related device structures
US7902545B2 (en) * 2008-05-14 2011-03-08 Baker Hughes Incorporated Semiconductor for use in harsh environments
US9048169B2 (en) * 2008-05-23 2015-06-02 Soitec Formation of substantially pit free indium gallium nitride
WO2009149299A1 (en) * 2008-06-04 2009-12-10 Sixpoint Materials Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth
JP5631746B2 (en) * 2008-06-04 2014-11-26 シックスポイント マテリアルズ， インコーポレイテッド High pressure vessel for growing group III nitride crystals, and method for growing group III nitride crystals using high pressure vessels and group III nitride crystals
EP2286007B1 (en) 2008-06-12 2018-04-04 SixPoint Materials, Inc. Method for testing gallium nitride wafers and method for producing gallium nitride wafers
JP2012501089A (en) * 2008-08-28 2012-01-12 ソイテック Monitoring and control of chloride gas flow by UV absorption.
WO2010045567A1 (en) * 2008-10-16 2010-04-22 Sixpoint Materials, Inc. Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals
WO2010060034A1 (en) * 2008-11-24 2010-05-27 Sixpoint Materials, Inc. METHODS FOR PRODUCING GaN NUTRIENT FOR AMMONOTHERMAL GROWTH
JP5355158B2 (en) * 2009-03-13 2013-11-27 株式会社東芝 Semiconductor substrate and semiconductor element
JP5743893B2 (en) * 2009-09-28 2015-07-01 株式会社トクヤマ Manufacturing method of laminate
RU2434315C1 (en) * 2010-03-15 2011-11-20 Юрий Георгиевич Шретер Light-emitting device with heterophase boundaries
CN101831613B (en) * 2010-04-21 2011-10-19 中国科学院半导体研究所 Method for growing nonpolar InN film by utilizing nonpolar ZnO buffer layer
JP2012104528A (en) * 2010-11-08 2012-05-31 Sharp Corp Nitride semiconductor light-emitting element
US8436363B2 (en) 2011-02-03 2013-05-07 Soitec Metallic carrier for layer transfer and methods for forming the same
KR20130011374A (en) * 2011-07-21 2013-01-30 주식회사 칩테크놀러지 Multiple quantum well for ultraviolet light emitting diode and method for manufacturing thereof
JP5879225B2 (en) * 2011-08-22 2016-03-08 住友化学株式会社 Nitride semiconductor template and light emitting diode
CN103022294B (en) * 2011-09-28 2015-11-25 比亚迪股份有限公司 A kind of sapphire epitaxial wafer structure and manufacture method thereof
US8796097B2 (en) 2012-04-26 2014-08-05 University Of South Carolina Selectively area regrown III-nitride high electron mobility transistor
KR102281726B1 (en) 2012-07-11 2021-07-26 루미리즈 홀딩 비.브이. Reducing or eliminating nanopipe defects in iii-nitride structures
WO2015176002A1 (en) * 2014-05-15 2015-11-19 The Regents Of The University Of California Doping in iii-nitride devices
JP6605213B2 (en) * 2015-03-23 2019-11-13 スタンレー電気株式会社 Semiconductor light emitting device
US9773898B2 (en) 2015-09-08 2017-09-26 Macom Technology Solutions Holdings, Inc. III-nitride semiconductor structures comprising spatially patterned implanted species
US9673281B2 (en) 2015-09-08 2017-06-06 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions
US9799520B2 (en) 2015-09-08 2017-10-24 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation via back side implantation
US20170069721A1 (en) 2015-09-08 2017-03-09 M/A-Com Technology Solutions Holdings, Inc. Parasitic channel mitigation using silicon carbide diffusion barrier regions
US9627473B2 (en) 2015-09-08 2017-04-18 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation in III-nitride material semiconductor structures
US10211294B2 (en) 2015-09-08 2019-02-19 Macom Technology Solutions Holdings, Inc. III-nitride semiconductor structures comprising low atomic mass species
US9806182B2 (en) 2015-09-08 2017-10-31 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation using elemental diboride diffusion barrier regions
US9704705B2 (en) 2015-09-08 2017-07-11 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation via reaction with active species
US9960127B2 (en) 2016-05-18 2018-05-01 Macom Technology Solutions Holdings, Inc. High-power amplifier package
US10134658B2 (en) 2016-08-10 2018-11-20 Macom Technology Solutions Holdings, Inc. High power transistors
CN108269731A (en) * 2016-12-30 2018-07-10 苏州纳维科技有限公司 N-shaped III-nitride semiconductor material and preparation method thereof
CN108110098B (en) * 2017-10-25 2019-12-31 华灿光电（浙江）有限公司 Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof
CN107946416B (en) * 2017-11-29 2019-08-27 湘能华磊光电股份有限公司 A kind of LED epitaxial growth method improving luminous efficiency
US10879420B2 (en) 2018-07-09 2020-12-29 University Of Iowa Research Foundation Cascaded superlattice LED system
US11038023B2 (en) 2018-07-19 2021-06-15 Macom Technology Solutions Holdings, Inc. III-nitride material semiconductor structures on conductive silicon substrates
CN110350056B (en) * 2019-07-25 2022-04-22 湘能华磊光电股份有限公司 LED epitaxial layer growth method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0497350A1 (en) * 1991-01-31 1992-08-05 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
US5825052A (en) * 1994-08-26 1998-10-20 Rohm Co., Ltd. Semiconductor light emmitting device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5116455A (en) * 1991-01-24 1992-05-26 Spire Corporation Process of making strain-free, carbon-doped epitaxial layers and products so made
US5844303A (en) * 1991-02-19 1998-12-01 Fujitsu Limited Semiconductor device having improved electronic isolation
US5306662A (en) * 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
JP2798545B2 (en) * 1992-03-03 1998-09-17 シャープ株式会社 Semiconductor light emitting device and method of manufacturing the same
JP3484997B2 (en) * 1994-07-06 2004-01-06 日亜化学工業株式会社 Gallium nitride based compound semiconductor light emitting device
JP3504976B2 (en) * 1994-08-26 2004-03-08 ローム株式会社 Semiconductor light emitting device
JPH08167735A (en) * 1994-12-12 1996-06-25 Hitachi Cable Ltd Light emitting element
JP3409958B2 (en) * 1995-12-15 2003-05-26 株式会社東芝 Semiconductor light emitting device
JP3374737B2 (en) * 1997-01-09 2003-02-10 日亜化学工業株式会社 Nitride semiconductor device
JP3757544B2 (en) * 1997-05-21 2006-03-22 昭和電工株式会社 Group III nitride semiconductor light emitting device
JP3651260B2 (en) * 1997-10-01 2005-05-25 日亜化学工業株式会社 Nitride semiconductor device
US6121639A (en) * 1998-08-20 2000-09-19 Xerox Corporation Optoelectronic devices based on ZnGeN2 integrated with group III-V nitrides
JP2003008058A (en) * 2001-06-18 2003-01-10 Showa Denko Kk AlGaInP EPITAXIAL WAFER, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT USING THE SAME

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0497350A1 (en) * 1991-01-31 1992-08-05 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
US5825052A (en) * 1994-08-26 1998-10-20 Rohm Co., Ltd. Semiconductor light emmitting device

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
DRIZHUK A ET AL: "Multicolor GaN LEDS with high luminescence yield" TECHNICAL PHYSICS LETTERS, 1996, vol. 22, pages 533-534, XP000625297 ISSN: 1063-7850 *
KERN R ET AL: "Role of growth initiation for high-brightness GaN-based LEDs" BLUE LASER AND LEDS, CHIBA, 1998, pages 433-436, XP000998158 ISBN: 4-274-90245-5 *
KIM K-S ET AL: "Growth and properties of Mg- and Mg-Si codoped p-type GaN" SOLID-STATE ELECTRONICS, SEPT 1999, vol. 43, no. 9, pages 1807-1812, XP002165928 ISSN: 0038-1101 *
PLOOG K ET AL: "Doping of group III nitrides" J. OF VACUUM SCIENCE & TECHNOL. A, 1998, vol. 16, no. 3, pages 1609-1614, XP002165927 ISSN: 0734-2101 *
ROMANO L ET AL: "Effect of Si doping on the strain and defect structure of GaN" DEFECTS IN SEMICONDUCTORS, BERKELEY, JULY 1999, vol. 273-274, pages 50-53, XP000998264 Physica B, Dec 1999 ISSN: 0921-4526 *
YAMAMOTO T ET AL: "Electronic structures of p-type GaN codoped with Be/Mg and Si/O" JOURNAL OF CRYSTAL GROWTH, 1998, vol. 189-190, pages 532-536, XP004148570 ISSN: 0022-0248 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012035135A1 (en) * 2010-09-19 2012-03-22 Osram Opto Semiconductors Gmbh Semiconductor chip and method for producing the same

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